JPH07105347B2 - Photochemical vapor deposition method - Google Patents
Photochemical vapor deposition methodInfo
- Publication number
- JPH07105347B2 JPH07105347B2 JP60247824A JP24782485A JPH07105347B2 JP H07105347 B2 JPH07105347 B2 JP H07105347B2 JP 60247824 A JP60247824 A JP 60247824A JP 24782485 A JP24782485 A JP 24782485A JP H07105347 B2 JPH07105347 B2 JP H07105347B2
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- Prior art keywords
- light source
- vapor deposition
- microwave
- light
- source chamber
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は光化学気相成長方法の光源部に関するもので
ある。TECHNICAL FIELD The present invention relates to a light source unit for a photochemical vapor deposition method.
近年，半導体の薄膜形成手段として，基板へのダメージ
や損失となる不必要な電子，イオンの発生を伴なわない
光化学気相成長方法が提案されている。とりわけ反応ガ
スに直接的に働きかけることが可能な，エネルギーの高
い真空紫外光を用いたものが有望視されている。第５図
は例えば特開昭60−74426号公報に示された従来の光化
学気相成長装置を示す概略部分断面構成図であり図にお
いて，（１）は光化学気相成長により薄膜を形成する反
応室，（２）は基板ホルダー，（３）はウエハ基板，
（４）は放電ガス導入口，（５）は透過窓，（６）はリ
ークガス導入口，（61），（62）は自動リーク弁，
（７）はプロセスガス導入口，（８）は放電ガス排出
口，（９）はプロセスガス排出口，（10）はマイクロ波
放電装置，（11）は導波管，（12）は放電室で，上記反
応室に，放電により発生する光を照射する光源室であ
る。In recent years, a photochemical vapor deposition method has been proposed as a means for forming a semiconductor thin film, which does not generate unnecessary electrons and ions which may damage or lose the substrate. In particular, it is promising to use high-energy vacuum ultraviolet light that can directly act on the reaction gas. FIG. 5 is a schematic partial sectional configuration diagram showing a conventional photochemical vapor deposition apparatus disclosed in, for example, Japanese Patent Laid-Open No. 60-74426. In FIG. 5, (1) is a reaction for forming a thin film by photochemical vapor deposition. Chamber, (2) substrate holder, (3) wafer substrate,
(4) is a discharge gas inlet, (5) is a transparent window, (6) is a leak gas inlet, (61) and (62) are automatic leak valves,
(7) is a process gas inlet, (8) is a discharge gas outlet, (9) is a process gas outlet, (10) is a microwave discharge device, (11) is a waveguide, and (12) is a discharge chamber. The reaction chamber is a light source chamber that irradiates the light generated by the discharge.
次に動作について説明する。放電ガス排出口（８），プ
ロセスガス排出口（９）よりそれぞれ所定の圧力まで排
気された，放電室（12）と反応室（１）は各々放電ガス
導入口（４），プロセスガス導入口（７）から放電ガ
ス，プロセスガスが導入される。この状態で導波管（1
1）より導かれたマイクロ波は，放電ガス導入口（４）
より放電室（12）に導入され，マイクロ波放電を生じさ
せ，放電光を発生する。こうして発生された放電光は，
透過窓（５）を通つて反応室内（１）の反応ガスを分解
し，ウエハ基板（３）に薄膜を形成させる。Next, the operation will be described. The discharge chamber (12) and the reaction chamber (1), which have been exhausted to a predetermined pressure from the discharge gas discharge port (8) and the process gas discharge port (9), respectively have a discharge gas introduction port (4) and a process gas introduction port. Discharge gas and process gas are introduced from (7). In this state, the waveguide (1
The microwave introduced from 1) is the discharge gas inlet (4)
It is further introduced into the discharge chamber (12) to generate microwave discharge and generate discharge light. The discharge light thus generated is
The reaction gas in the reaction chamber (1) is decomposed through the transparent window (5) to form a thin film on the wafer substrate (3).
従来の光化学気相成長装置は以上のように構成されてお
り，光源室全体をマイクロ波により放電発光させ真空紫
外光を発光させる構造となつているので、放電プラズマ
中での自己吸収により外部に放射される真空紫外光が減
ぜられ，光強度の高い真空紫外光を発生させることがむ
ずかしく，また，光源室全体を均一に放電発光させるこ
とは現実的に困難であつた。すなわち，導波管（11）に
配設された放電ガス導入口（４）近傍のマイクロ波電界
が，光源室（12）内のそれと較べて強くなるため，放電
ガス導入口（４）近傍のみが放電発光することになる。
さらに特開昭60−38812号公報に示されるように，導波
管から放電ガス導入口を経て光源室に導びかれるマイク
ロ波を光源室の外部より供給する構成のものも提案され
ている。すなわち，光源室の外部にマイクロ波共振器を
配設し光源室内全体をマイクロ波放電発光させる構造と
なつている。この構成のものにおいても，マイクロ波共
振器により，光源室内にマイクロ波電力を注入できたと
しても，マイクロ波電界を光源室内全体にわたり均一に
形成することができずその結果不均一な放電発光とな
る。The conventional photochemical vapor deposition apparatus is configured as described above, and has a structure in which the entire light source chamber is caused to discharge and emit vacuum ultraviolet light by microwaves. It is difficult to generate high-intensity vacuum ultraviolet light because the emitted vacuum ultraviolet light is reduced, and it is practically difficult to evenly discharge the entire light source room. That is, since the microwave electric field in the vicinity of the discharge gas introduction port (4) arranged in the waveguide (11) becomes stronger than that in the light source chamber (12), only in the vicinity of the discharge gas introduction port (4). Will discharge and emit light.
Further, as disclosed in Japanese Patent Laid-Open No. 60-38812, there has been proposed a structure in which the microwave guided from the waveguide to the light source chamber through the discharge gas inlet is supplied from the outside of the light source chamber. That is, a microwave resonator is provided outside the light source chamber to cause microwave discharge and light emission in the entire light source chamber. Even in this configuration, even if microwave power can be injected into the light source chamber by the microwave resonator, the microwave electric field cannot be formed uniformly over the entire light source chamber, resulting in uneven discharge emission. Become.
従来の光化学気相成長装置は，以上のように光源室全体
をマイクロ波により放電発光させ，真空紫外光線を発生
させているので，マイクロ波電力を効率良く放電発光に
寄与させることがむずかしく，また，光源室全体を均一
に放電発光させることは現実的に困難であり、基板上に
速く，均質に薄膜形成できない問題点があった。As described above, the conventional photochemical vapor deposition apparatus emits vacuum ultraviolet rays by causing the entire light source chamber to discharge and emit microwaves, so it is difficult to efficiently contribute microwave power to discharge and emission. However, it is practically difficult to uniformly discharge and emit light in the entire light source chamber, and there is a problem that a thin film cannot be formed uniformly on the substrate quickly.
この発明は上記のような問題点を解消するためになされ
たもので，基板への堆積速度が速く，均一に薄膜形成で
きる光化学気相成長方法を得ることを目的とする。The present invention has been made to solve the above problems, and an object thereof is to obtain a photochemical vapor deposition method capable of forming a thin film uniformly with a high deposition rate on a substrate.
この発明に係る光化学気相成長方法は、光化学気相成長
により薄膜を形成する反応室、上記反応室に光を照射す
る光源室、上記光源室に形成されたマイクロ波を給電す
るマイクロ波給電手段、及び上記マイクロ波空胴共振器
内に設けられ、上記マイクロ波給電手段より給電される
マイクロ波により放電発光する無電極放電ランプを使用
し、上記光源室から上記反応室に光を照射して薄膜を形
成する光化学気相成長方法において、上記光源室内を真
空排気後導入された不活性の置換ガスにより、上記無電
極ランプの放電前の圧力より高い圧力にして、上記無電
極放電ランプだけを放電発光させ、それから、上記光源
室内の圧力を上記不活性置換ガスで大気圧にして、上記
無電放電ランプを風冷することにより、この放電発光に
よる発熱をとりのぞくようにしたものである。The photochemical vapor deposition method according to the present invention includes a reaction chamber for forming a thin film by photochemical vapor deposition, a light source chamber for irradiating the reaction chamber with light, and a microwave feeding means for feeding microwaves formed in the light source chamber. , And an electrodeless discharge lamp that is provided in the microwave cavity resonator and discharges and emits by microwaves fed by the microwave feeding means, and irradiates the reaction chamber with light from the light source chamber. In the photochemical vapor deposition method for forming a thin film, the light source chamber is evacuated to an inert substitution gas introduced after evacuation to a pressure higher than the pressure before discharge of the electrodeless lamp, and only the electrodeless discharge lamp is The discharge light is emitted, and then the pressure in the light source chamber is adjusted to the atmospheric pressure with the inert substitution gas, and the electric discharge lamp is air-cooled to remove heat from the discharge light. It is obtained by the memorial service.
この発明における光化学気相成長方法は，光源室内の圧
力を放電ランプの放電前の圧力より高くして光源室に形
成されたマイクロ波空胴共振器内に配設された放電ラン
プのみをマイクロ波放電発光させているので、光強度の
高い均一な真空紫外光線が得られる。In the photochemical vapor deposition method according to the present invention, the pressure inside the light source chamber is made higher than the pressure before discharge of the discharge lamp, and only the discharge lamp disposed in the microwave cavity resonator formed in the light source chamber is microwaved. Since discharge light emission is performed, uniform vacuum ultraviolet rays with high light intensity can be obtained.
以下，この発明の一実施例を図について説明する、第１
図はこの発明の一実施例による光化学気相成長方法を示
す断面構成図であり，図において，（１）は反応室，
（３）はテーブル（２）に載置された基板，（４）は光
源室（12）に置換ガスを導入するための置換ガス導入
口，（５）は真空紫外光を透過する光透過窓，（７）は
反応室（１）に反応ガスを入れるための反応ガス導入
口，（８）は光源室（12）を真空排気する光源室排気
口，（９）は反応室を所定の圧力まで排気する反応室排
気口，（13）は光源室（12）内に形成されたマイクロ波
空胴共振器（以下キヤビテイーと呼ぶ）で，椀形状であ
つて内面が光を反射する空胴壁（15）（以下反射板と記
す）と，マイクロ波を遮断し，光を透過させる金属メツ
シユ（14）で構成される。（16）はマイクロ波発振器
で，マグネトロンであり，このマイクロ波発振器（16）
と導波管（11）によりキヤビテイー（13）にマイクロ波
を給電するマイクロ波給電手段を構成する。（17）はキ
ヤビテイー（13）内に設けられ，可電離媒体を封入した
球形状の無電極ランプである。An embodiment of the present invention will be described below with reference to the drawings.
FIG. 1 is a cross-sectional configuration diagram showing a photochemical vapor deposition method according to an embodiment of the present invention, in which (1) is a reaction chamber,
(3) is a substrate placed on the table (2), (4) is a replacement gas inlet for introducing a replacement gas into the light source chamber (12), and (5) is a light transmission window for transmitting vacuum ultraviolet light. , (7) is a reaction gas inlet for introducing a reaction gas into the reaction chamber (1), (8) is a light source chamber exhaust port for evacuating the light source chamber (12), and (9) is a predetermined pressure in the reaction chamber. The reaction chamber exhaust port that exhausts up to (13) is a microwave cavity resonator (hereinafter referred to as "cavity") formed in the light source chamber (12), which has a bowl shape and whose inner surface reflects light. (15) (hereinafter referred to as a reflector) and a metal mesh (14) that blocks microwaves and transmits light. (16) is a microwave oscillator, which is a magnetron.
The waveguide (11) constitutes microwave feeding means for feeding microwaves to the cavity (13). Reference numeral (17) is a spherical electrodeless lamp provided in the cavity (13) and containing an ionizable medium.
以下動作について説明する。まず反応室（１）を反応室
排気口（９）から真空ポンプ（図示しない）により10-5
（Torr）程度の圧力に真空排気する。次に反応ガス導入
口（７）から真空紫外光線により反応するガスとして例
えばシランガスが入れられ，所定の圧力に設定される。
一方，光源室（12）は光源室排気口（８）から真空ポン
プ（図示しない）により真空排気される。この時光源室
（12）の圧力は，空気中の酸素による紫外光線の吸収を
なくすため,10-5（Torr）程度まで真空排気される。排
気が完了したならば光源室排気口（８）を封じ（図示し
ない）た状態で置換ガス導入口（４）より置換ガスとし
てHe等の希ガスあるいは窒素ガスを導入する。この場合
置換ガスによる光源室（12）内の圧力は，キヤビテイー
（13）内に配設された無電極ランプ（17）内の放電前の
圧力より高く設定される。The operation will be described below. First, the reaction chamber (1) is moved from the reaction chamber exhaust port (9) to a vacuum pump (not shown) at 10 −5.
Evacuate to a pressure of (Torr). Next, for example, a silane gas is introduced as a gas that reacts with vacuum ultraviolet rays from the reaction gas introduction port (7), and a predetermined pressure is set.
On the other hand, the light source chamber (12) is evacuated from the light source chamber exhaust port (8) by a vacuum pump (not shown). At this time, the pressure in the light source chamber (12) is evacuated to about 10 −5 (Torr) in order to eliminate absorption of ultraviolet rays by oxygen in the air. When the exhaust is completed, a rare gas such as He or a nitrogen gas is introduced as a replacement gas from the replacement gas inlet (4) with the light source chamber exhaust port (8) sealed (not shown). In this case, the pressure in the light source chamber (12) due to the replacement gas is set to be higher than the pressure before discharge in the electrodeless lamp (17) arranged in the cavity (13).
無電極放電ランプ（17）内の圧力は通常数Torr〜数百To
rrであり、置換ガス圧力はこのいずれに対してもランプ
内圧力より大とされる。The pressure in the electrodeless discharge lamp (17) is usually several Torr to several hundred To.
rr, and the pressure of the replacement gas is set to be higher than the pressure in the lamp in both cases.
以上の状態で，マイクロ波を発生するマグネトロン（1
6）へ電力を供給すれば、（図示しない），マイクロ波
が発生しマイクロ波が導波管内（11）を伝ぱんし，キヤ
ビテイー（13）内に導びかれる。このキヤビテイー（1
3）は，金属でできた椀形の反射板（15）と，反射板（1
5）に取付られた金属メツシユ（14）で構成され，キヤ
ビテイー（13）内に配設された無電極ランプ（17）にマ
イクロ波電力を効率よく注入すると同時に有効に真空紫
外光線を取り出す形状に選ばれる。したがつて反射板
（15）は，マイクロ波の共振器としての機能と光反射板
としての配光制御機能を兼ねる形状で構成され，金属メ
ツシユ（14）は，キヤビテイー（13）内のマイクロ波を
キヤビテイー外へ洩らすことなく紫外光線を透過させる
ために用いられる。さて，キヤビテイー（13）内に導入
されたマイクロ波は，前述のとおりキヤビテイー（13）
内の圧力すなわち光源室（12）内の圧力が，あらかじめ
無電極ランプ（17）内の放電前圧力より高く設定されて
いるので，キヤビテイー内の雰囲気を放電させることな
く無電極ランプ（17）の可電離媒体のみを放電発光させ
る。そして可電離媒体として水銀を添加し，可電離媒体
を封入するガラス材として合成石英を用いれば185（n
m）の真空紫外光線が得られ，又ガラス材としてLiFやMg
F2を用い，可電離媒体として希ガスを封入すれば，希ガ
スの共鳴線のさらに波長の短い真空紫外光線が得られ
る。なお，前記無電極ランプ（17）を連続して放電発光
させる場合は，放電による無電極ランプの発熱をとりの
ぞくために，光源室（12）内の圧力を置換ガスで大気圧
にして無電極ランプを風冷あるいは強制風冷すればよ
い。次にマイクロ波放電発光により得られた真空紫外光
線は，その大部分が金属メツシユ（14）をとおりぬけ，
光源室（12）と反応室（１）の間に設けられた透過窓
（５）を透過して反応室（１）内に照射される。この場
合の透過窓（５）も前述した無電極ランプ（17）のガラ
ス材と同様に，真空紫外光線の波長により，合成石英や
LiF,MgF2が用いられる。照射された真空紫外光線は反応
室（１）内の反応ガスを反応させ，その結果テーブル
（２）に載置された基板（３）上に堆積物を形成させ
る。Under the above conditions, the magnetron (1
When power is supplied to 6), a microwave is generated (not shown), and the microwave propagates in the waveguide (11) and is guided into the cavity (13). This cavity (1
3) is a bowl-shaped reflector (15) made of metal and a reflector (1
The electrodeless lamp (17), which is composed of the metal mesh (14) attached to 5) and is installed in the cavity (13), efficiently injects microwave power and at the same time effectively takes out vacuum ultraviolet rays. To be elected. Therefore, the reflector (15) is configured to have a function as a resonator for microwaves and a light distribution control function as a light reflector, and the metal mesh (14) serves as a microwave in the cavity (13). Is used to transmit ultraviolet rays without leaking out of the cavity. By the way, the microwave introduced into the cavity (13) is the microwave (13) as described above.
Since the internal pressure, that is, the internal pressure of the light source chamber (12) is set higher than the pressure before discharge in the electrodeless lamp (17) in advance, the electrodeless lamp (17) can be discharged without discharging the atmosphere in the cavity. Only the ionizable medium is discharged and emitted. If mercury is added as the ionizable medium and synthetic quartz is used as the glass material for enclosing the ionizable medium, 185 (n
m) vacuum ultraviolet rays can be obtained, and LiF and Mg as glass materials
If F 2 is used and a rare gas is enclosed as an ionizable medium, vacuum ultraviolet rays with a shorter wavelength of the resonance line of the rare gas can be obtained. When the electrodeless lamp (17) continuously discharges and emits light, the pressure in the light source chamber (12) is set to the atmospheric pressure by the replacement gas in order to exclude the heat generated by the electrodeless lamp. Can be air cooled or forced air cooled. Next, most of the vacuum ultraviolet rays obtained by microwave discharge emission pass through the metal mesh (14),
The light is transmitted through a transmission window (5) provided between the light source chamber (12) and the reaction chamber (1) to irradiate the reaction chamber (1). In this case, the transmission window (5) is also made of synthetic quartz or the like depending on the wavelength of the vacuum ultraviolet ray, like the glass material of the electrodeless lamp (17) described above.
LiF and MgF 2 are used. The irradiated vacuum ultraviolet rays react with the reaction gas in the reaction chamber (1), and as a result, deposits are formed on the substrate (3) placed on the table (2).
なお可電離媒体を封入した無電極ランプ（17）の形状を
球形で示したが，照射面の形状・大きさに対応して管形
状にしてもよい。又，無電極ランプ（17）にマイクロ波
を注入するキヤビテイー（13）を金属でできた椀形の反
射板（15）と金属メツシユ（14）で構成したが，第２図
に示す様にキヤビテイー全体を円筒の金属メツシユ（1
4）で構成し，その外側に光反射板（18）を配置しても
よい。この場合キヤビテイーはマイクロ波共振器として
の機能を満足すればよく配光制御機能を分離することが
でき設計がたやすい。The shape of the electrodeless lamp (17) enclosing the ionizable medium is shown as a sphere, but it may be a tube shape depending on the shape and size of the irradiation surface. Further, the cavity (13) for injecting microwaves into the electrodeless lamp (17) is composed of a bowl-shaped reflector (15) made of metal and a metal mesh (14). As shown in FIG. Completely cylindrical metal mesh (1
4), and the light reflection plate (18) may be arranged on the outside thereof. In this case, as long as the cavity satisfies the function as a microwave resonator, the light distribution control function can be separated and the design is easy.
さらに上記実施例では放電ランプ（17）にマイクロ波を
注入するマイクロ波給電手段を光源室（12）内に配設し
たが，第３図に示す様にキヤビテイー（13）のみを光源
室（12）内に配し，導波管（11）とマグネトロン（16）
を光源室（12）外に配置する構成とし，導波管（11）内
に大気を遮へいするためのマイクロ波透過材例えばアル
ミナセラミツクからなるシール板（19）を取付ければ，
冷却を要するマグネトロン（16）を大気で動作させるこ
とができるので構成が簡単になる。又，第４図に示すよ
うにキヤビテイー（13）内をキヤビテイー排気口（８）
より直接真空排気した後，置換ガス導入口（４）より置
換ガスを入れ，キヤビテイー（13）内の圧力を前記実施
例と同様に放電ランプ（17）の放電前圧力より高く設定
してマイクロ波放電させる構成にしてもよい。この場合
キヤビテイー（13）が光源室（12）を兼ねることになり
装置が小形になる。Further, in the above embodiment, the microwave feeding means for injecting microwaves into the discharge lamp (17) is arranged in the light source chamber (12), but as shown in FIG. 3, only the cavity (13) is arranged in the light source chamber (12). ), The waveguide (11) and the magnetron (16)
Is arranged outside the light source chamber (12), and a microwave transparent material for shielding the atmosphere in the waveguide (11), such as a sealing plate (19) made of alumina ceramic, is attached,
Since the magnetron (16) requiring cooling can be operated in the atmosphere, the structure becomes simple. Further, as shown in FIG. 4, the inside of the cavity (13) is the cavity exhaust port (8).
After evacuation more directly, the replacement gas is introduced through the replacement gas inlet (4), and the pressure in the cavity (13) is set higher than the pre-discharge pressure of the discharge lamp (17) in the same manner as in the above-mentioned embodiment. You may make it the structure to discharge. In this case, the cavity (13) also serves as the light source chamber (12), which makes the device compact.
本願出願当時に無電極放電ランプを使用した光源はあっ
たが、空気中で使用するものであって、真空紫外光（波
長200nm以下の紫外光）を利用できるようにしたものは
なかった。また真空紫外光を利用できるものとして電極
付放電ランプで試料を直接照射するものがあった。Although there was a light source using an electrodeless discharge lamp at the time of the application of the present application, there was no light source that was used in the air and was capable of utilizing vacuum ultraviolet light (ultraviolet light having a wavelength of 200 nm or less). In addition, there is a method of directly irradiating a sample with a discharge lamp with an electrode as a method that can utilize vacuum ultraviolet light.
しかし、これはランプの寿命が電極の消耗により制限さ
れ、紫外光強度も不足であった。そこで無電極放電ラン
プの利用を考えたが、真空紫外光を透過させるためにラ
ンプの周囲を高真空にすると、ランプが発熱のために破
壊するという欠点があった。However, this is because the life of the lamp is limited by the consumption of the electrodes, and the intensity of ultraviolet light is insufficient. Therefore, the use of an electrodeless discharge lamp was considered, but there was a drawback in that the lamp was destroyed due to heat generation when a high vacuum was created around the lamp in order to transmit vacuum ultraviolet light.
本発明はこれらの問題点を解決するものであって、前記
のように、上記光源室内を真空排気後導入された不活性
の置換ガスにより、上記無電極放電ランプの放電前の圧
力より高い圧力にして、上記無電極放電ランプだけを放
電発光させ、それから、上記光源室内の圧力を上記不活
性置換ガスで大気圧にして、上記無電極放電ランプを風
冷することにより、この放電発光による発熱をとりのぞ
くから、光源室内の放電させることなく無電極放電ラン
プだけを安定に放電発光でき、光強度の高い均一な真空
紫外光線が継続的に得られ、その結果堆積速度の速い膜
質の良好な薄膜を形成できる効果がある。The present invention is to solve these problems, and as described above, by the inert substitution gas introduced after the inside of the light source chamber is evacuated, a pressure higher than that before the discharge of the electrodeless discharge lamp is achieved. Then, only the electrodeless discharge lamp is caused to emit light by discharge, and then the pressure in the light source chamber is brought to atmospheric pressure by the inert substitution gas, and the electrodeless discharge lamp is air-cooled to generate heat by the discharge emission. Therefore, only the electrodeless discharge lamp can be stably discharged and emitted without discharging in the light source chamber, and a uniform vacuum ultraviolet ray with high light intensity can be continuously obtained. As a result, a thin film with a high deposition rate and good film quality. There is an effect that can be formed.
第１図はこの発明の一実施例による光化学気相成長方法
を示す概略断面構成図，第２図はこの発明の他の実施例
に係るマイクロ波空胴共振器を示す概略断面構成図，第
３図及び第４図は各々この発明の他の実施例による光化
学気相成長方法を示す概略断面構成図，並びに第５図は
従来の光化学気相成長方法を示す概略断面構成図であ
る。 （１）……反応室，（11）……導波管，（12）……光源
室，（13）……マイクロ波空胴共振器，（14）……金属
メツシユ，（15）……空胴壁，（16）……マイクロ波発
振器，（17）……放電ランプ，（18）……光反射板。 なお，図中，同一符号は同一又は相当部分を示す。1 is a schematic sectional view showing a photochemical vapor deposition method according to an embodiment of the present invention, and FIG. 2 is a schematic sectional view showing a microwave cavity resonator according to another embodiment of the present invention. 3 and 4 are schematic cross-sectional configuration diagrams showing a photochemical vapor deposition method according to another embodiment of the present invention, and FIG. 5 is a schematic cross-sectional configuration diagram showing a conventional photochemical vapor deposition method. (1) …… Reaction chamber, (11) …… Waveguide, (12) …… Light source chamber, (13) …… Microwave cavity resonator, (14) …… Metal mesh, (15) …… Cavity wall, (16) …… Microwave oscillator, (17) …… Discharge lamp, (18) …… Light reflector. In the drawings, the same reference numerals indicate the same or corresponding parts.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 西前 順一 兵庫県尼崎市塚口本町８丁目１番１号 三 菱電機株式会社応用機器研究所内 (72)発明者 植田 至宏 兵庫県尼崎市塚口本町８丁目１番１号 三 菱電機株式会社応用機器研究所内 (72)発明者 正田 勲 神奈川県鎌倉市大船５丁目１番１号 三菱 電機株式会社大船製作所内 (56)参考文献 特開 昭60−74426（ＪＰ，Ａ) 特開 昭50−54172（ＪＰ，Ａ) 特開 昭54−82876（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Junichi Nishimae 8-1-1 Tsukaguchi Honcho, Amagasaki City, Hyogo Prefecture Sanryu Electric Co., Ltd. Applied Equipment Laboratory (72) Inventor Yoshihiro Ueda Tsukaguchi Honcho, Amagasaki City, Hyogo Prefecture 8-1-1, Sanryo Electric Co., Ltd. Applied Equipment Research Laboratory (72) Inventor Isao Shoda 5-1-1, Ofuna, Kamakura-shi, Kanagawa Mitsubishi Electric Co., Ltd., Ofuna Works (56) Reference JP 60- 74426 (JP, A) JP-A-50-54172 (JP, A) JP-A-54-82876 (JP, A)
Claims (8)
室、上記反応室に光を照射する光源室、上記光源室に形
成されたマイクロ波空胴共振器、上記マイクロ波空胴共
振器にマイクロ波を給電するマイクロ波給電手段、及び
上記マイクロ波空胴共振器内に設けられ、上記マイクロ
波給電手段より給電されるマイクロ波により放電発光す
る無電極放電ランプを使用し、上記光源室から上記反応
室に光を照射して薄膜を形成する光化学気相成長方法に
おいて、上記光源室内を真空排気後導入された不活性の
置換ガスにより、上記無電極放電ランプの放電前の圧力
より高い圧力にして、上記無電極放電ランプだけを放電
発光させ、それから、上記光源室内の圧力を上記不活性
置換ガスで大気圧にして、上記無電極放電ランプを風冷
することにより、この放電発光による発熱をとりのぞく
ことを特徴とる光化学気相成長方法。1. A reaction chamber for forming a thin film by photochemical vapor deposition, a light source chamber for irradiating the reaction chamber with light, a microwave cavity resonator formed in the light source chamber, and a microwave cavity resonator. Using microwave feeding means for feeding microwaves, and an electrodeless discharge lamp provided in the microwave cavity resonator for emitting electric discharge by microwaves fed by the microwave feeding means, from the light source chamber In the photochemical vapor deposition method of forming a thin film by irradiating the reaction chamber with light, an inert substitution gas introduced after vacuum exhaustion of the light source chamber causes a pressure higher than that before discharge of the electrodeless discharge lamp. Then, only the electrodeless discharge lamp is caused to discharge and emit light, and then the pressure in the light source chamber is brought to atmospheric pressure by the inert substitution gas, and the electrodeless discharge lamp is air-cooled, Photochemical vapor deposition process that takes said removing by the discharge light emission fever.
導波管で構成される特許請求の範囲第１項記載の光化学
気相成長方法。2. The photochemical vapor deposition method according to claim 1, wherein the microwave feeding means comprises a microwave oscillator and a waveguide.
特許請求の範囲第１項又は第２項記載の光化学気相成長
方法。3. The photochemical vapor deposition method according to claim 1, wherein the microwave cavity resonator is provided in the light source chamber.
許請求の範囲第３項記載の光化学気相成長方法。4. The photochemical vapor deposition method according to claim 3, wherein the microwave feeding means is provided in the light source chamber.
許請求の範囲第１項ないし第３項のいずれかに記載の光
化学気相成長方法。5. The photochemical vapor deposition method according to claim 1, wherein the microwave feeding means is provided outside the light source chamber.
許請求の範囲第１項、又は第２項記載の光化学気相成長
方法。6. The photochemical vapor deposition method according to claim 1, wherein the light source chamber also serves as a microwave cavity resonator.
内面が光を反射する空胴壁と、マイクロ波を遮断し、光
を透過させる金属メッシュで構成される特許請求の範囲
第１項ないし第６項のいずれかに記載の光化学気相成長
方法。7. A microwave cavity resonator comprising a cavity wall whose inner surface reflects light and a metal mesh which blocks microwaves and allows light to pass therethrough. 7. The photochemical vapor deposition method according to any one of items 1 to 6.
断し、光を透過させる金属メッシュで構成され、上記マ
イクロ波空胴共振器の外部に光反射板を設けた特許請求
の範囲第１項ないし第５項のいずれかに記載の光化学気
相成長方法。8. The microwave cavity resonator is composed of a metal mesh that blocks microwaves and transmits light, and a light reflection plate is provided outside the microwave cavity resonator. The photochemical vapor deposition method according to any one of items 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60247824A JPH07105347B2 (en) | 1985-11-05 | 1985-11-05 | Photochemical vapor deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60247824A JPH07105347B2 (en) | 1985-11-05 | 1985-11-05 | Photochemical vapor deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62106618A JPS62106618A (en) | 1987-05-18 |
| JPH07105347B2 true JPH07105347B2 (en) | 1995-11-13 |
Family
ID=17169208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60247824A Expired - Lifetime JPH07105347B2 (en) | 1985-11-05 | 1985-11-05 | Photochemical vapor deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105347B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7166963B2 (en) * | 2004-09-10 | 2007-01-23 | Axcelis Technologies, Inc. | Electrodeless lamp for emitting ultraviolet and/or vacuum ultraviolet radiation |
| KR102772575B1 (en) | 2021-05-25 | 2025-02-27 | 세메스 주식회사 | Apparatus for treating substrate and method for treating substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1024246A (en) * | 1973-08-22 | 1978-01-10 | Donald M. Spero | Apparatus and method for generating radiation |
| JPS581511B2 (en) * | 1977-12-15 | 1983-01-11 | 三菱電機株式会社 | electrodeless fluorescent lamp |
| JPS6074426A (en) * | 1983-09-29 | 1985-04-26 | Ulvac Corp | Photo excitation process apparatus |
-
1985
- 1985-11-05 JP JP60247824A patent/JPH07105347B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62106618A (en) | 1987-05-18 |
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