JPH07105320B2 - Electronic beam drawing device sample placement device - Google Patents
Electronic beam drawing device sample placement deviceInfo
- Publication number
- JPH07105320B2 JPH07105320B2 JP60056463A JP5646385A JPH07105320B2 JP H07105320 B2 JPH07105320 B2 JP H07105320B2 JP 60056463 A JP60056463 A JP 60056463A JP 5646385 A JP5646385 A JP 5646385A JP H07105320 B2 JPH07105320 B2 JP H07105320B2
- Authority
- JP
- Japan
- Prior art keywords
- glass mask
- holder
- electron beam
- beam drawing
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P95/00—
Landscapes
- Electron Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は電子ビーム描画装置の試料載置装置に関する。Description: TECHNICAL FIELD The present invention relates to a sample mounting device of an electron beam drawing apparatus.
電子ビーム描画装置として描画される試料は通常ガラス
マスクやウエハでありガラスマスクの場合ホルダーにセ
ットされてステージ上にローディングされる。ホルダー
にセットされるときガラスマスクはその周辺をホルダー
に固定するためそれ自身の自重によるたわみが発生す
る。このたわみは描画面の上下方向の位置誤差となり精
度を劣化させており、特に大型のガラスマスクの場合そ
のたわみ量は電子ビームの焦点深度をはるかに超えた値
になる。ウエハで行われているように精度のよい基準板
にガラスマスクを押しつけてならわせる方法もあるが、
基準板の剛性を強くする必要がありホルダーの重量は重
くかつ大きくなってしまう。The sample drawn by the electron beam drawing apparatus is usually a glass mask or a wafer. In the case of a glass mask, the sample is set in a holder and loaded on the stage. When the glass mask is set in the holder, its periphery is fixed to the holder, so that the glass mask is bent due to its own weight. This deflection causes a positional error in the vertical direction of the drawing surface and deteriorates the accuracy, and especially in the case of a large glass mask, the deflection amount becomes a value far exceeding the depth of focus of the electron beam. There is also a method of pressing a glass mask against a highly accurate reference plate as is done with wafers,
It is necessary to increase the rigidity of the reference plate, and the weight of the holder becomes heavy and large.
従って従来からガラスマスクの上下方向位置を補正する
試料載置装置がありその一例を第4図により述べる。描
画時真空である試料室11内には駆動源12により移動され
る移動ステージ13が設けてあり、移動ステージ13上には
一対のピエゾ素子14、14を介して載置ステージ15があ
り、載置ステージ15上にクランプ機構16を介してホルダ
ー17に支持されたガラスマスク18が載置されている。ガ
ラスマスク18は試料室11の上方の不図示の鏡筒からの電
子ビーム19が、ダイナミックフォーカスコイル20、集束
コイル21そして偏向板22等により制御の上照射されて描
画される。Therefore, there is a conventional sample placing device for correcting the vertical position of the glass mask, and an example thereof will be described with reference to FIG. A moving stage 13 that is moved by a drive source 12 is provided in the sample chamber 11 that is a vacuum at the time of drawing, and a mounting stage 15 is provided on the moving stage 13 via a pair of piezo elements 14 and 14. A glass mask 18 supported by a holder 17 is mounted on a mounting stage 15 via a clamp mechanism 16. An electron beam 19 from a lens barrel (not shown) above the sample chamber 11 is irradiated onto the glass mask 18 under the control of the dynamic focus coil 20, the focusing coil 21, the deflecting plate 22 and the like and is drawn.
一方ガラスマスク18の上下位置補正は、He−Neレーザ光
源26から発したレーザ光が窓27からレーザ干渉計28およ
びベンダー29を通ってガラスマスク18を照射し、その反
射光は上記とは逆にベンダー29、レーザ干渉計28そして
窓27を通ってレシーバ30に至る。レシーバ30の信号は増
巾器31から可変電源32を経てピエゾ素子14に供給されて
これを伸縮させ、載置ステージ15を介してガラスマスク
18を上下動させることにより補正する。On the other hand, the vertical position of the glass mask 18 is corrected by irradiating the glass mask 18 with the laser light emitted from the He-Ne laser light source 26 through the window 27 through the laser interferometer 28 and the bender 29, and the reflected light is the opposite of the above. To the receiver 30 through the bender 29, laser interferometer 28 and window 27. The signal from the receiver 30 is supplied from the amplifier 31 through the variable power source 32 to the piezo element 14 to expand and contract it, and the glass mask through the mounting stage 15.
Correct by moving 18 up and down.
このような試料載置装置でもガラスマスク18の上下位置
補正は可能なようであるが、近時ガラスマスクは大型化
して10インチ(約254mm)にもなると周辺支持されたガ
ラスマスクの中央部のたわみは0.1mmにも及ぶ。しかし
て従来の電子ビーム描画装置においてはガラスマスク18
の描画個所の上下位置を補正しつつ描画しているが、0.
1mmの補正にもなるとピエゾ素子14の伸縮に或る程度の
時間を要するため実際には補正が不充分な状態で描画さ
れることになり精度が低下していた。さらに載置ステー
ジ全体を微動させるため機構が複雑であり、また広い描
画面積に対して連続制御するため複雑でコストが高くな
る欠点があった。It seems that the vertical position of the glass mask 18 can be corrected even with such a sample placing device, but when the glass mask is recently enlarged to reach 10 inches (about 254 mm), the center portion of the glass mask supported on the periphery is The deflection is as large as 0.1 mm. However, in the conventional electron beam drawing apparatus, the glass mask 18
I am drawing while correcting the vertical position of the drawing part of, but 0.
In the case of correction of 1 mm, expansion and contraction of the piezo element 14 requires a certain amount of time, so that the correction is actually performed in an insufficient state and the accuracy is lowered. Further, there is a drawback that the mechanism is complicated because the entire mounting stage is finely moved, and that since continuous control is performed for a large drawing area, it is complicated and the cost is high.
また前記のようなピエゾ素子14でガラスマスク18の上下
位置を移動させて補正する機構でなくガラスマスクの上
面の位置をZセンサにて測定し位置に比例してダイナミ
ックフォーカスコイル22の電流を調整しガラスマスク18
の上面に電子ビームの焦点を結ばせる方法がある。しか
しながら、この方法においても常時電子ビームを制御す
るためにビーム位置、ビーム寸法等が不安定になるとい
った欠点があった。Further, instead of the mechanism for moving the vertical position of the glass mask 18 by the piezo element 14 to correct it, the position of the upper surface of the glass mask is measured by the Z sensor and the current of the dynamic focus coil 22 is adjusted in proportion to the position. Glass mask 18
There is a method to focus the electron beam on the upper surface of. However, this method also has a drawback that the beam position, the beam size, and the like become unstable because the electron beam is constantly controlled.
本発明はこのような欠点を除去したものでその目的は、
ガラスマスクが大型化し自重によるたわみが大きくなっ
てもそのたわみを一度の補正により除去して描画精度を
高くすると共に、一度の補正により連続補正を不要にし
もってコストを低くした電子ビーム描画装置の試料載置
装置を提供することにある。The present invention eliminates such drawbacks and its purpose is to
Even if the size of the glass mask becomes large and the deflection due to its own weight becomes large, the deflection is removed by one correction to improve the drawing accuracy, and the cost is reduced by eliminating the continuous correction by one correction and reducing the cost. It is to provide a mounting device.
本発明における電子ビーム描画装置の試料載置装置は、
ガラスマスクを係脱可能に支持するホルダーと、同ホル
ダー上に配置され前記ガラスマスク上面の周辺近傍の複
数箇所を受ける高さ位置規制用の基準片と、ガラスマス
クを前記基準片に押圧可能に前記ホルダー内に設けられ
たバネと、同ホルダーを係脱可能に保持する載置ステー
ジとからなる電子ビーム描画装置の試料載置装置におい
て、前記載置ステージに上下動可能に取付けられかつバ
ネにより前記ガラスマスク側に押圧されると共に載置ス
テージ上に設けられた高さ位置規制用の基準ストッパに
当接可能に設けられた基準板と、前記ガラスマスクの下
面に対向すべく同ガラスマスクの中央寄り下方に配置さ
れて上下動自在に前記ホルダーに取付けられホルダーを
載置ステージ上に保持したとき前記基準板の上方に位置
して同基準板の上昇により前記ガラスマスクの中央寄り
下面を所定量押上げるスペーサとを具備することを特徴
としている。The sample placing device of the electron beam drawing apparatus according to the present invention is
A holder for detachably supporting the glass mask, a reference piece for height position regulation which is arranged on the holder and receives a plurality of locations near the periphery of the upper surface of the glass mask, and the glass mask can be pressed against the reference piece. In a sample placing device of an electron beam drawing apparatus comprising a spring provided in the holder and a placing stage that holds the holder in a detachable manner, a sample is attached to the placing stage so as to be movable up and down by a spring. A reference plate, which is pressed against the glass mask side and is capable of contacting a reference stopper for height position regulation provided on the mounting stage, and a reference plate of the glass mask that faces the lower surface of the glass mask. It is located near the center and is attached to the holder so that it can move up and down. When the holder is held on the mounting stage, it is located above the reference plate and above the reference plate. Is characterized by comprising a predetermined amount pushes up spacers inboard lower surface of the glass mask by.
以下本発明の一実施例を示した第1図により説明する。
載置ステージ41は、第4図に示した試料室11内に設けら
れた移動ステージ13と同様の不図示の移動ステージ上に
設置されており、その上面にはクランプ片42が取付けら
れている。このクランプ片42の凸起部へバネ43により中
央部を削除したホルダー44が押付けられてクランプさ
れ、ホルダー44にはその上面に固着した基準片45に対し
バネ46によりガラスマスク18が押付けられて支持されて
いる。ホルダー44には保持器47が取付けられ保持器47に
は長さを等しくした複数本のピン48が保持されており、
このピン48は先端をガラスマスク18の下面に当接させ得
るようになっている。An embodiment of the present invention will be described below with reference to FIG.
The mounting stage 41 is installed on a moving stage (not shown) similar to the moving stage 13 provided in the sample chamber 11 shown in FIG. 4, and a clamp piece 42 is attached to the upper surface thereof. . A holder 44 whose central portion is removed is pressed by the spring 43 onto the raised portion of the clamp piece 42 and clamped, and the glass mask 18 is pressed against the reference piece 45 fixed to the upper surface of the holder 44 by the spring 46. It is supported. A holder 47 is attached to the holder 44, and the holder 47 holds a plurality of pins 48 of equal length,
The tip of this pin 48 can be brought into contact with the lower surface of the glass mask 18.
載置ステージ41の空洞部にはこれへ回動自在に支持され
たレバー49が設けてあり、レバー49の一端へ回動自在に
取付けた基準板50の上面はピン48の下端に対しレバー49
の他端近くに設けたバネ51により押圧している。また基
準板50にはその一側をこれに接している3個のエピゾ素
子52が埋め込まれ(図では2個のみ示し他の1個は2個
と共に正3角形をなす頂点の位置にある)、ピエゾ素子
52の他側は載置ステージ41の上面に固着した基準ストッ
パ53に接している。A lever 49 rotatably supported by the mounting stage 41 is provided in the cavity of the mounting stage 41, and the upper surface of the reference plate 50 rotatably attached to one end of the lever 49 has the lever 49 with respect to the lower end of the pin 48.
Is pressed by a spring 51 provided near the other end of the. Further, three epizo elements 52, one side of which is in contact with it, are embedded in the reference plate 50 (only two are shown in the drawing, and the other one is at the apex position forming a regular triangle together with the two). , Piezo element
The other side of 52 is in contact with a reference stopper 53 fixed to the upper surface of the mounting stage 41.
ガラスマスク18の上下位置(Z方向)補正のための測定
は従来例と同様であり、He−Neレーザ光源26から発した
レーザ光は、試料室の窓(図示せず)から鏡筒56に固着
したレーザ干渉計28およびベンダー29を通ってガラスマ
スク18を照射し、その反射光はこれとは逆にベンダー2
9、レーザ干渉計28そして窓を通ってレシーバ30に至
る。レシーバ30の信号は増巾器31から可変電源32を経て
ピエゾ素子52を伸縮させる。The measurement for correcting the vertical position (Z direction) of the glass mask 18 is the same as in the conventional example, and the laser light emitted from the He-Ne laser light source 26 enters the lens barrel 56 from the window (not shown) of the sample chamber. The glass mask 18 is irradiated through the fixed laser interferometer 28 and the bender 29, and the reflected light is, on the contrary, the bender 2
9. Laser interferometer 28 and then through window to receiver 30. The signal from the receiver 30 is expanded and contracted by the piezoelectric element 52 from the amplifier 31 through the variable power source 32.
次に前述した実施例の動作を説明する。ホルダー44に支
持されたガラスマスク18が載置ステージ41上にロードさ
れると、先づガラスマスク18の上面についてこれに接し
ている基準片45の近傍をレーザ光により測定してこれを
零点にし、次いで移動ステージ(図示せず第4図参照)
をXおよびY方向に移動させてレーザ光をガラスマスク
18のほぼ中心に照射する。このときの反射光はレシーバ
30に入りその信号は増巾器31および可変電源32を経てピ
エゾ素子52に加えられ、この結果ピエゾ素子52は信号値
に応じて伸縮する。ピエゾ素子52が伸びたときは基準板
50は下降従ってピン48も下降するためガラスマスク18も
下降し、ピエゾ素子52の縮んだときは基準板50は上昇従
ってガラスマスク18も上昇する。このようにしてガラス
マスク18の中央部はガラスマスク18の周辺支持部と同一
高さに合わせられる。この時のガラスマスク18の凹凸は
周辺支持部とピン48で支えられた間の自重によるタワミ
分だけとなりその量は数μm以下に抑えることができ
る。Next, the operation of the above-described embodiment will be described. When the glass mask 18 supported by the holder 44 is loaded on the mounting stage 41, first, the vicinity of the reference piece 45 which is in contact with the upper surface of the glass mask 18 is measured by laser light to make it a zero point. , Then moving stage (not shown, see FIG. 4)
The laser light to the glass mask by moving the X and Y directions.
Irradiate almost the center of 18. The reflected light at this time is the receiver
The signal enters 30 and is applied to the piezo element 52 via the amplifier 31 and the variable power source 32. As a result, the piezo element 52 expands and contracts according to the signal value. Reference plate when the piezo element 52 extends
The glass mask 18 also descends because 50 descends and the pins 48 descend, and when the piezo element 52 contracts, the reference plate 50 ascends and thus the glass mask 18 as well. In this way, the central portion of the glass mask 18 is flush with the peripheral support portion of the glass mask 18. At this time, the unevenness of the glass mask 18 is only the deflection due to its own weight while being supported by the peripheral support portion and the pin 48, and the amount can be suppressed to several μm or less.
なおホルダー44のロード時或いはアンロード時には基準
板50は不図示のアンクランプ機構により押し下げられて
いる。また基準板50はレバー49とバネ51により支持され
るほか不図示のシリンダ内に挿入しその下面にバネ(図
示せず)を配置するようにしてもよいし、ピン48の数は
ガラスマスク18の大きさに応じて適宜増減してもよく、
さらにガラスマスク18の厚さが変わり、その変化がピエ
ゾ素子14の調整範囲を超える厚さの場合にはピン48を交
換することにより対応すればよい。The reference plate 50 is pushed down by an unclamp mechanism (not shown) when the holder 44 is loaded or unloaded. The reference plate 50 is supported by a lever 49 and a spring 51, and may be inserted into a cylinder (not shown) so that a spring (not shown) is arranged on the lower surface thereof. May be increased or decreased depending on the size of
Furthermore, if the thickness of the glass mask 18 changes and the change exceeds the adjustment range of the piezo element 14, the pin 48 may be replaced to deal with it.
第2図は本発明の第2実施例の要部を示している。この
例は第1実施例のピン48の代りにリング61を使用した例
であり、ガラスマスク18と基準板50との間には軸62にリ
ング61と座金63とを交互に挿入し軸62の両端近くにリン
グ61等の抜け止としてスナップリング64を取付けたもの
を配置する。図示以外は第1実施例と同じである。FIG. 2 shows the essential parts of the second embodiment of the present invention. In this example, a ring 61 is used instead of the pin 48 of the first embodiment, and a ring 61 and a washer 63 are alternately inserted into a shaft 62 between the glass mask 18 and the reference plate 50, and the shaft 62 is inserted. A snap ring 64 is attached near both ends to prevent the ring 61, etc. from coming off. Except for the illustration, it is the same as the first embodiment.
第3図は本発明の第3実施例の要部を示したものであ
り、第1実施例のピン48の代りに平板66を配置したもの
であり、図示以外は第1実施例と同じである。なお、第
1実施例のピン48、第2実施例のリング61等そして第3
実施例の平板66を総称してスペーサと呼ぶ。FIG. 3 shows an essential part of a third embodiment of the present invention, in which a flat plate 66 is arranged instead of the pin 48 of the first embodiment, and is the same as the first embodiment except for the illustration. is there. The pin 48 of the first embodiment, the ring 61 of the second embodiment, and the third
The flat plate 66 of the embodiment is generically called a spacer.
本発明における電子ビーム描画装置の試料載置装置は以
上説明したように、ガラスマスクを支持したホルダーを
載置ステージ上にローディングしたときガラスマスクの
高さ位置をZセンサにより測定し、その位置に応じて基
準板の高さを調整してガラスマスクの位置を補正するよ
うにした。このときガラスマスクはその面積に応じて下
面の中央部さらにはより広い範囲を押し上げることによ
り平坦になり一度の補正で全面積の描画が可能になっ
た。従って従来のように補正しつつ描画することはなく
なり精度は向上すると共に、連続補正の必要はなく一度
の補正のためコストが低下する利点もある。As described above, the sample placing apparatus of the electron beam drawing apparatus according to the present invention measures the height position of the glass mask by the Z sensor when the holder supporting the glass mask is loaded on the placing stage, and the position is set at that position. Accordingly, the height of the reference plate was adjusted to correct the position of the glass mask. At this time, the glass mask became flat by pushing up the central portion of the lower surface and a wider range according to the area, and the entire area could be drawn with one correction. Therefore, there is an advantage that the accuracy is improved because it is not necessary to perform the drawing while performing the correction as in the conventional technique, and the cost is reduced because the correction is performed once without the need for continuous correction.
第1図は本発明の一実施例の断面図、第2図および第3
図は本発明のそれぞれ異なる他の実施例の一部断面図、
第4図は従来例の断面図である。 18……ガラスマスク、41……載置ステージ、42……クラ
ンプ片、44……ホルダー、46,51……バネ、48,61,66…
…スペーサ、50……基準板、52……ピエゾ素子FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 and FIG.
The drawings are partial cross-sectional views of other different embodiments of the present invention.
FIG. 4 is a sectional view of a conventional example. 18 …… Glass mask, 41 …… Mounting stage, 42 …… Clamp piece, 44 …… Holder, 46,51 …… Spring, 48,61,66…
… Spacer, 50 …… Reference plate, 52 …… Piezo element
Claims (6)
ーと、同ホルダー上に配置され前記ガラスマスク上面の
周辺近傍の複数箇所を受ける高さ位置規制用の基準片
と、ガラスマスクを前記基準片に押圧可能に前記ホルダ
ー内に設けられたバネと、同ホルダーを係脱可能に保持
する載置ステージとからなる電子ビーム描画装置の試料
載置装置において、前記載置ステージに上下動可能に取
付けられかつバネにより前記ガラスマスク側に押圧され
ると共に載置ステージ上に設けられた高さ位置規制用の
基準ストッパに当接可能に設けられた基準板と、前記ガ
ラスマスクの下面に対向すべく同ガラスマスクの中央寄
り下方に配置されて上下動自在に前記ホルダーに取付け
られホルダーを載置ステージ上に保持したとき前記基準
板の上方に位置して同基準板の上昇により前記ガラスマ
スクの中央寄り下面を所定量押上げるスペーサとを具備
することを特徴とする電子ビーム描画装置の試料載置装
置。1. A holder for detachably supporting a glass mask, a reference piece for height position regulation which is arranged on the holder and receives a plurality of positions near the periphery of the upper surface of the glass mask, and the glass mask as the reference. In a sample placing device of an electron beam drawing apparatus comprising a spring provided in the holder so as to be able to press against one piece and a placing stage holding the holder in a detachable manner, the sample stage can be moved up and down on the placing stage. A reference plate, which is attached and pressed to the glass mask side by a spring and is capable of abutting against a reference stopper for height position regulation provided on the mounting stage, faces the lower surface of the glass mask. Therefore, it is arranged below the center of the glass mask and is attached to the holder movably up and down. When the holder is held on the mounting stage, it is located above the reference plate. Sample supporting means of the electron beam drawing apparatus, characterized in that the inboard lower surface of the glass mask by the rise of the reference plate; and a predetermined amount pushes up the spacer.
替可能にされたことを特徴とする特許請求の範囲第1項
記載の電子ビーム描画装置の試料載置装置。2. The sample placing device of the electron beam drawing apparatus according to claim 1, wherein the spacer is replaceable according to the thickness of the glass mask.
とを特徴とする特許請求の範囲第1項記載の電子ビーム
描画装置の試料載置装置。3. A sample placing device for an electron beam drawing apparatus according to claim 1, wherein a pin-shaped spacer is used as the spacer.
ことを特徴とする特許請求の範囲第1項記載の電子ビー
ム描画装置の試料載置装置。4. A sample mounting device for an electron beam drawing apparatus according to claim 1, wherein a ring-shaped spacer is used as the spacer.
とを特徴とする特許請求の範囲第1項記載の電子ビーム
描画装置の試料載置装置。5. A sample mounting device for an electron beam drawing apparatus according to claim 1, wherein flat spacers are used as the spacers.
み、このピエゾ素子の一側を載置ステージ上に固着した
基準ストッパに接触させ他側を前記基準板に接触させる
と共に、前記ピエゾ素子の入力電圧を変化させることに
よりスペーサとの接触面高さを調整するようにしたこと
を特徴とする特許請求の範囲第1項記載の電子ビーム描
画装置の試料載置装置。6. A reference plate is provided with three piezo elements, one side of the piezo elements is brought into contact with a reference stopper fixed on a mounting stage and the other side is brought into contact with the reference plate, and the piezo element is also attached. The sample placing device of the electron beam drawing apparatus according to claim 1, wherein the height of the contact surface with the spacer is adjusted by changing the input voltage of the element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60056463A JPH07105320B2 (en) | 1985-03-20 | 1985-03-20 | Electronic beam drawing device sample placement device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60056463A JPH07105320B2 (en) | 1985-03-20 | 1985-03-20 | Electronic beam drawing device sample placement device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61214518A JPS61214518A (en) | 1986-09-24 |
| JPH07105320B2 true JPH07105320B2 (en) | 1995-11-13 |
Family
ID=13027794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60056463A Expired - Lifetime JPH07105320B2 (en) | 1985-03-20 | 1985-03-20 | Electronic beam drawing device sample placement device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105320B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3068398B2 (en) * | 1993-11-15 | 2000-07-24 | 日本電気株式会社 | Reticle manufacturing method and reticle manufacturing apparatus |
| JP6226031B2 (en) * | 2016-06-13 | 2017-11-08 | 大日本印刷株式会社 | Method for producing template for nanoimprint lithography |
| JP6818588B2 (en) * | 2017-02-24 | 2021-01-20 | 株式会社ホロン | Sample tilt correction device and sample tilt correction method |
| JP7280237B2 (en) * | 2020-12-28 | 2023-05-23 | 株式会社ホロン | Automatic sample tilt correction device and sample tilt automatic correction method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54135169U (en) * | 1977-08-30 | 1979-09-19 | ||
| JPH0119398Y2 (en) * | 1979-03-23 | 1989-06-05 | ||
| JPS5647946U (en) * | 1980-03-24 | 1981-04-28 | ||
| JPS57194997U (en) * | 1981-06-04 | 1982-12-10 |
-
1985
- 1985-03-20 JP JP60056463A patent/JPH07105320B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61214518A (en) | 1986-09-24 |
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