JPH0693545B2 - Ceramic multilayer wiring board and manufacturing method thereof - Google Patents
Ceramic multilayer wiring board and manufacturing method thereofInfo
- Publication number
- JPH0693545B2 JPH0693545B2 JP1331791A JP33179189A JPH0693545B2 JP H0693545 B2 JPH0693545 B2 JP H0693545B2 JP 1331791 A JP1331791 A JP 1331791A JP 33179189 A JP33179189 A JP 33179189A JP H0693545 B2 JPH0693545 B2 JP H0693545B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductor
- main component
- wiring board
- conductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000919 ceramic Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010410 layer Substances 0.000 claims description 121
- 239000004020 conductor Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 239000003870 refractory metal Substances 0.000 claims description 5
- 229910052702 rhenium Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 11
- 238000007747 plating Methods 0.000 description 10
- 238000001465 metallisation Methods 0.000 description 8
- 239000006104 solid solution Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は、電子回路部品として使用されるセラミック
多層配線基板およびその製造方法に関する。Description: TECHNICAL FIELD The present invention relates to a ceramic multilayer wiring board used as an electronic circuit component and a method for manufacturing the same.
［従来の技術］ 従来の混成集積回路などに使用されるセラミック多層配
線基板は、絶縁層となるセラミック生基板にＷ、Mo等の
高融点金属を主成分とする第１導体層と、該導体層を一
部露出させる開口部を備えた絶縁層と、該絶縁層から前
記開口部分と連接する銅を主成分とする金属厚膜からな
る第２導体層からなる構成である。このような構成にお
いては接触抵抗が高く、接着強度も弱くなる欠点があ
り、特に第１導体層表面が酸化している場合には顕著で
ある。[Prior Art] A conventional ceramic multilayer wiring board used for a hybrid integrated circuit or the like is a ceramic raw board serving as an insulating layer, a first conductor layer containing a high melting point metal such as W or Mo as a main component, and the conductor. It is configured by an insulating layer having an opening that partially exposes the layer, and a second conductor layer made of a thick metal film containing copper as a main component and connecting the insulating layer to the opening. In such a structure, there are drawbacks that the contact resistance is high and the adhesive strength is weak, which is remarkable especially when the surface of the first conductor layer is oxidized.
このため、上記問題点を防ぐ工夫がなされている。その
例として、実開昭57-12775では第１導体層と第２導体層
との接続部に、電解メッキ、無電解メッキあるいは蒸着
等の手段によるメタライズ層を介して第１導体層と第２
導体層とが接続される構成の提案がある。Therefore, measures have been taken to prevent the above problems. As an example, in Japanese Utility Model Application Laid-Open No. 57-12775, the first conductor layer and the second conductor layer are provided at the connection portion between the first conductor layer and the second conductor layer via a metallized layer formed by means such as electrolytic plating, electroless plating or vapor deposition.
There is a proposal of a structure in which the conductor layer is connected.
また別の例として、特公昭63-42879ではメタライズ層の
製造方法としてニッケル、コバルトあるいは銅よりなる
膜厚0.2〜5.0μｍのメッキ層の形成方法の提案がある。As another example, Japanese Patent Publication No. 63-42879 proposes a method for forming a metallized layer by forming a plated layer of nickel, cobalt or copper having a thickness of 0.2 to 5.0 μm.
［発明が解決しようとする課題］ 従来のセラミック多層配線基板のメタライズ層は、無電
解メッキ法では開口部分以外の周辺にブリードが発生す
るし、電解メッキ法ではメッキ引き回し線の設定による
基板寸法の制限あるいはメッキ引き回し線の配置によっ
て浮遊容量が増大する等機械的、電気的な品質上の課題
があった。[Problems to be Solved by the Invention] In the metallized layer of the conventional ceramic multilayer wiring board, bleeding occurs around the area other than the opening portion in the electroless plating method, and in the electrolytic plating method, the size of the board is changed by setting the plating lead line. There is a problem in mechanical and electrical quality such as an increase in stray capacitance due to the limitation or the arrangement of the plated wiring lines.
あた、金属粉末等からなる市販の厚膜ペーストによる厚
膜メタライズ法でなメタライズ層は緻密膜質でないた
め、十分な接着特性が得られないという課題があった。However, since the metallized layer formed by the thick film metallization method using a commercially available thick film paste made of metal powder or the like is not a dense film quality, there is a problem that sufficient adhesive properties cannot be obtained.
また、メッキ法では、メッキ液は必ず使用されるが、メ
ッキ面である第１導体層の表面に第５図（断面図）に示
すような穴（８）がある場合、その穴（８）にメッキ液
が残存することがある。そのため、セラミック多層配線
基板の変色、導体層の酸化による劣化等の品質上の課題
があった。Further, in the plating method, the plating solution is always used, but if there is a hole (8) as shown in FIG. 5 (cross-sectional view) on the surface of the first conductor layer that is the plating surface, the hole (8) The plating solution may remain. Therefore, there are quality problems such as discoloration of the ceramic multilayer wiring board and deterioration of the conductor layer due to oxidation.
本発明の目的は、上述の課題を解決するため、メタライ
ズ層を改良し、生産性が高く、電気的、機械的な品質に
優れ、信頼性の高いセラミック多層配線基板およびその
製造方法の提供である。In order to solve the above problems, an object of the present invention is to provide a ceramic multilayer wiring board having improved metallization layer, high productivity, excellent electrical and mechanical quality, and high reliability, and a manufacturing method thereof. is there.
［課題を解決するための手段］ 上記目的を達成するため、本発明の第１は、内層に高融
点金属を主成分とする第１導体層と、表面層に銅を主成
分とする第２導体層とを備えたセラミック多層配線基板
において、第１導体層と第２導体層との接続部にPt、N
i、Cu、Au、Rh、Ru、Re、Co、PdおよびIrのいずれか１
種または２種以上の成分からなるメタロオーガニックス
ペーストを塗布、焼成したメタライズ層を備えたことを
特徴とするセラミック多層配線基板である。[Means for Solving the Problem] In order to achieve the above object, the first aspect of the present invention is to provide a first conductor layer containing a refractory metal as a main component in an inner layer and a second conductor layer containing copper as a main component in a surface layer. In a ceramic multilayer wiring board including a conductor layer, Pt, N is provided at a connecting portion between the first conductor layer and the second conductor layer.
Any one of i, Cu, Au, Rh, Ru, Re, Co, Pd and Ir 1
It is a ceramic multilayer wiring board comprising a metallized layer obtained by applying and firing a metalloorganic space composed of one or more components.
また、第２は、内層に高融点金属を主成分とする第１導
体層と、表面層に銅を主成分とする第２導体層とを備え
たセラミック多層配線基板の製造方法において、（１）
セラミック生基板に高融点金属を主成分とする導体を塗
布、同時焼成し、第１導体層を有するコファイヤード多
層基板を形成し、（２）該コファイヤード多層基板表面
の該第１導体層が露出している部分に、Pt、Ni、Cu、A
u、Rh、Ru、Re、Co、PdおよびIrのいずれか１種または
２種以上の成分からなるメタロオーガニックスペースト
を塗布、焼成してメタライズ層を形成し、（３）次い
で、該メタライズ層を介して銅を主成分とする導体を塗
布、焼成し第２導体層を形成することを特徴とするセラ
ミック多層配線基板の製造方法である。A second method is a method for manufacturing a ceramic multilayer wiring board having a first conductor layer containing a refractory metal as a main component in an inner layer and a second conductor layer containing copper as a main component in a surface layer. )
A conductor containing a high melting point metal as a main component is applied to a ceramic green substrate and co-fired to form a cofiyard multilayer substrate having a first conductor layer, (2) the first conductor on the surface of the cofiyard multilayer substrate. Pt, Ni, Cu, A on the exposed layer
u, Rh, Ru, Re, Co, Pd, and a metalloorganic spacet consisting of two or more kinds of components are applied and baked to form a metallized layer, and (3) then the metallized layer. A method of manufacturing a ceramic multilayer wiring board, characterized in that a second conductor layer is formed by applying a conductor containing copper as a main component through the above and firing it.
［作用］ 本発明のメタロオーガニックスペースト（Metallo Orga
nics Pastes）は、錯体ペーストであって、ガラス質の
フリット分や金属酸化物を含まない。[Operation] Metallo Organic Space of the Present Invention
nics Pastes) is a complex paste that does not contain glassy frit or metal oxides.
本発明の作用を第１図および第２図を用いて説明する。
第１図は本発明の一実施例のセラミック多層配線基板の
断面図である。絶縁層（１）となるセラミック生基板に
Ｗ、Mo等の高融点金属を主成分とした市販のＷペース
ト、Moペースト等で所定の配線を基板面およびスルーホ
ール部に塗布する。さらに必要に応じてこれを複数枚作
成して積層することができる。次に、焼成して絶縁層
（１）と第１導体層（２）が一体化してコファイヤード
（Cofired）多層基板（５）となる。次に、この第１導
体層による配線が露出する部分全体を覆うためにメタロ
オーガニックスペーストを塗布し、焼成してメタライズ
層（３）とする。次に、メタライズ層（３）を介して、
銅を主成分とする市販の銅ペーストにより所定の配線を
塗布し、焼成して第２導体層（４）を形成する。次に、
図示しないが、必要に応じて、抵抗体層およびその抵抗
体層を保護するガラス層、また、オーバーコート樹脂層
を設けることができる。The operation of the present invention will be described with reference to FIGS. 1 and 2.
FIG. 1 is a sectional view of a ceramic multilayer wiring board according to an embodiment of the present invention. Predetermined wiring is applied to the substrate surface and the through-hole portion on a ceramic raw substrate which will be the insulating layer (1) with a commercially available W paste or Mo paste whose main component is a high melting point metal such as W or Mo. Further, if necessary, a plurality of these can be prepared and laminated. Next, the insulating layer (1) and the first conductor layer (2) are integrated by firing to form a Cofired multilayer substrate (5). Next, a metalloorganic space is applied to cover the entire exposed portion of the wiring formed by the first conductor layer, and is baked to form a metallized layer (3). Then, through the metallization layer (3),
A predetermined wiring is applied with a commercially available copper paste containing copper as a main component and baked to form a second conductor layer (4). next,
Although not shown, a resistor layer, a glass layer for protecting the resistor layer, and an overcoat resin layer may be provided, if necessary.
第２図は、第１図の○部の部分拡大図で、断面構造を詳
細に示した断面図である。図において、本発明のメタラ
イズ層（３）は、第１導体層（２）の凹凸面に容易に沿
い、凹部であっても深く入り込み、焼成によりメカニカ
ルアンカー効果と第１導体層（２）と固溶体層（６）を
生成している。また、このメタライズ層は、第２導体層
（４）ともメカニカルアンカー効果があり、固溶体層
（７）を生成する。FIG. 2 is a partially enlarged view of a circle portion in FIG. 1, showing a detailed sectional structure. In the figure, the metallized layer (3) of the present invention easily follows the uneven surface of the first conductor layer (2) and penetrates deeply even in the concave portion, and the mechanical anchor effect and the first conductor layer (2) are formed by firing. A solid solution layer (6) is produced. Further, this metallized layer also has a mechanical anchor effect with the second conductor layer (4) and produces a solid solution layer (7).
そのため、本発明のメタロオーガニックスペーストによ
るメタライズ層は、次のようなおよびの作用効果が
ある。第１導体層および第２導体層との接着強度は強
固なものとなる。モデル的に上記構成による試験片で、
第２導体層の上に銅線を２×2mm□全面にハンダ付けし
て引張強度を測定したところ７〜13Kg/2mm□であった。
比較として、同様の試験片でメタライズ層をメッキ法に
より形成した場合、引張強度は、５〜7kg/2mm□であ
り、また、金属粉末等からなる厚膜ペーストで形成した
場合、緻密膜質とならず、引張強度は２〜3kg/2mm□と
低かった。Therefore, the metallized layer of the metallo-organic space of the present invention has the following effects and. The adhesive strength between the first conductor layer and the second conductor layer becomes strong. A test piece with the above configuration as a model,
A copper wire was soldered on the entire surface of the second conductor layer in a size of 2 × 2 mm □, and the tensile strength was measured and found to be 7 to 13 kg / 2 mm □.
For comparison, the tensile strength is 5 to 7 kg / 2 mm □ when the metallized layer is formed by the plating method on the same test piece, and when the metallized layer is formed by the thick film paste made of metal powder or the like, the dense film quality is not The tensile strength was as low as 2-3 kg / 2 mm □.
さらに、本発明の作用効果は、導体成分とのメカニカ
ルアンカー効果および固溶体化（合金化）によりオーミ
ックコンタクトを形成することである。Furthermore, the function and effect of the present invention is to form an ohmic contact by a mechanical anchor effect with a conductor component and a solid solution (alloying).
メタロオーガニックスペーストの成分は、第１導体層あ
るいは第２導体層の成分によって、固溶体となる成分を
選ぶことが好ましい。As the components of the metalloorganic space, it is preferable to select a component that becomes a solid solution depending on the components of the first conductor layer or the second conductor layer.
以下、実施例について図面を参照して説明する。Hereinafter, embodiments will be described with reference to the drawings.
［実施例］ ［実施例１および比較例１］ 以下、実施例１について、比較例１と対比して説明す
る。[Example] [Example 1 and Comparative Example 1] Hereinafter, Example 1 will be described in comparison with Comparative Example 1.
実施例１は、アルミナを主成分として、これにシリカ、
カルシア等の焼結助材および有機バインダー等を加えて
混合して、ドクターブレード法等で成形した絶縁層
（１）となるセラミック生基板の複数枚の基板面および
スルーホールに、第１導体層（２）となるＷを主成分と
したＷペーストをスクリーン印刷法等で必要な導体配線
を形成し、これらを複数枚積層した後、水素等の還元雰
囲気、1400℃〜1700℃で焼成して、絶縁層（１）と第１
導体層（２）と一体化してコファイヤード多層基板
（５）とする。Example 1 is mainly composed of alumina, silica,
A first conductor layer is formed on a plurality of substrate surfaces and through holes of a ceramic raw substrate to be an insulating layer (1) formed by a doctor blade method or the like by adding and mixing a sintering aid such as calcia and the like, and an organic binder. (2) W paste containing W as a main component is formed into a necessary conductive wiring by a screen printing method or the like, and a plurality of these are laminated, and then fired in a reducing atmosphere such as hydrogen at 1400 ° C to 1700 ° C. , Insulating layer (1) and first
It is integrated with the conductor layer (2) to form a cofiyard multilayer substrate (5).
次に、コファイヤード多層基板（５）の外表面に第１導
体層（２）が露出している部分（第１導体層のうち絶縁
層で覆われていない配線部分）にPtメタロオーガニック
スペーストをスクリーン印刷等で塗布し、次に、これを
酸化雰囲気で350℃〜450℃、10分間脱バインダー処理を
した後、窒素雰囲気または水素雰囲気で700℃〜1100
℃、10分間熱処理してメタライズ層（３）を形成する。
このときのメタライズ層の厚みは、0.05〜5.0μｍの範
囲であればよいが、好ましくは約２μｍである。次に、
銅を主成分とする厚膜ペースト（例えば、商品名DUPONT
＃9922）を用いて、前記メタライズ層（３）を介して
スクリーン印刷等の方法で印刷後、窒素雰囲気中におい
て、900℃、10分焼成して第２導体層（４）とし、セラ
ミック多層配線基板とする。さらに、図示しないが、必
要に応じて、抵抗体層およびその抵抗体層を保護するガ
ラス層、また、オーバーコート樹脂層を設ける。Next, a Pt metalloorganic space is formed in the portion where the first conductor layer (2) is exposed on the outer surface of the cofiyard multilayer substrate (5) (the wiring portion of the first conductor layer which is not covered with the insulating layer). Applied by screen printing, etc., and then debinding process at 350 ℃ ~ 450 ℃ for 10 minutes in oxidizing atmosphere, then 700 ℃ ~ 1100 in nitrogen or hydrogen atmosphere.
Heat treatment is performed at 10 ° C. for 10 minutes to form a metallized layer (3).
The thickness of the metallized layer at this time may be in the range of 0.05 to 5.0 μm, but is preferably about 2 μm. next,
Thick film paste mainly composed of copper (for example, trade name DUPONT
# 9922) is printed through the metallization layer (3) by a method such as screen printing, and then baked in a nitrogen atmosphere at 900 ° C. for 10 minutes to form a second conductor layer (4). Use as a substrate. Further, although not shown, a resistor layer, a glass layer for protecting the resistor layer, and an overcoat resin layer are provided if necessary.
このPtメタロオーガニックスペーストよりなるメタライ
ズ層は電気的、機械的に安定で、強固な接合層を形成す
る。すなわち、第１導体層のＷおよび第２導体層のCuの
双方と固溶性に優れていて、焼成により拡散して容易に
固溶体となり、また、メカニカルアンカー効果も有して
いる。The metallized layer made of Pt metallo-organic space is electrically and mechanically stable and forms a strong bonding layer. That is, it has excellent solid solubility with both W of the first conductor layer and Cu of the second conductor layer, diffuses easily by firing and becomes a solid solution, and also has a mechanical anchor effect.
この効果を第３図で説明する。同図は、実施例１および
比較例１の引張強度の初期値から−40℃〜150℃での冷
熱サイクルを1000サイクルまで行ったときの変化を図示
する。この比較例１は第１導体と第２導体との接続部に
メタライズ層の介在のない場合であり、その他の条件は
実施例１と同じである。実施例１は、比較例１に比べ初
期値そのものが数倍高い約13.0kg/2mm□であり、1000サ
イクル後で約10.0kg/2mm□と十分高い値である。一方、
比較例１は初期値約3.0kg/2mm□と小さな値であり、さ
らに、150サイクルで引張強度は50％程度低下し、その
後もさらに低下する。This effect will be described with reference to FIG. This figure illustrates changes from the initial values of the tensile strength of Example 1 and Comparative Example 1 when the heat cycle at −40 ° C. to 150 ° C. was performed up to 1000 cycles. This comparative example 1 is a case where no metallized layer is present at the connecting portion between the first conductor and the second conductor, and the other conditions are the same as those of the example 1. The initial value of Example 1 is about 13.0 kg / 2 mm □, which is several times higher than that of Comparative Example 1, and it is a sufficiently high value of about 10.0 kg / 2 mm □ after 1000 cycles. on the other hand,
In Comparative Example 1, the initial value is a small value of about 3.0 kg / 2 mm □, and further, the tensile strength decreases by about 50% after 150 cycles, and further decreases thereafter.
また、実施例１は、重要な電気特性であるオーミックコ
ンタクトにも優れている。第４図は、実施例１のＷ−Cu
間の電圧−電流の関係を示す特性図である。同図から、
電圧と電流の関係は直線の関係にあることがわかる。Further, Example 1 is also excellent in ohmic contact, which is an important electrical characteristic. FIG. 4 shows W-Cu of Example 1.
It is a characteristic view which shows the voltage-current relationship between them. From the figure,
It can be seen that the relationship between voltage and current is linear.
本発明は、上述の優れた効果に加えて、メタロオーガニ
ックスペーストの塗布時に、位置ずれ等のため、必要と
しない部分（絶縁層部分）にはみでた場合、焼成により
絶縁層部分には十分に接着する強度がなく、超音波洗
浄、ブラッシング等の手法により容易に除去できる。そ
のため、不必要なメタライズ層部分が存在せず、その点
でも電気的、機械的な特性を損なうことがなく、品質的
に安定し、信頼性を増す。In addition to the above-described excellent effects, the present invention provides a sufficient insulating layer portion by firing when the portion (insulating layer portion) that is not required due to misalignment during application of the metalloorganic space is exposed. It has no adhesive strength and can be easily removed by methods such as ultrasonic cleaning and brushing. Therefore, there is no unnecessary metallization layer portion, and in that respect also, the electrical and mechanical characteristics are not impaired, the quality is stable, and the reliability is increased.
さらに、本発明の品質、生産性の評価を行ったが、主な
品質不良の一つであるブリードによるショート不良は０
％であり、また表面絶縁抵抗による劣化不良は０％であ
る。しかし、従来法のメッキ法によるメタライズ層の場
合では、それぞれの不良率は15〜60％であり、本発明が
品質、生産性の点で極めて優れているといえる。Furthermore, the quality and productivity of the present invention were evaluated, but there was no short circuit defect due to bleeding, which is one of the main quality defects.
%, And the deterioration due to surface insulation resistance is 0%. However, in the case of the metallized layer formed by the conventional plating method, each defective rate is 15 to 60%, and it can be said that the present invention is extremely excellent in terms of quality and productivity.
［実施例２］ 実施例１との相違点だけを述べると、Pdメタロオーガニ
ックスペーストをディスペンサで塗布し、次いで、これ
を酸化雰囲気で350℃〜450℃、10分間脱バインダー処理
をした後、窒素雰囲気または水素雰囲気で700℃〜1100
℃、10分間熱処理した。このときのメタライズ層の厚み
は約２μｍである。[Example 2] Explaining only the points different from Example 1, Pd metalloorganic space was applied with a dispenser, and then this was subjected to a binder removal treatment at 350 ° C to 450 ° C for 10 minutes in an oxidizing atmosphere. 700 ℃ ~ 1100 in nitrogen atmosphere or hydrogen atmosphere
Heat treatment was performed at ℃ for 10 minutes. The thickness of the metallized layer at this time is about 2 μm.
ここで、Pdメタロオーガニックスペーストを選んだのは
第１導体のMoと第２導体のCuとの双方に固溶性に優れ、
拡散して固溶体を作り、またメカニカルアンカー効果を
有していて電気的、機械的に安定で、強固な接合層が得
られる。同時に、絶縁層には接着する強度がなく、実施
例１と同様に電気的、機械的な特性を損なうことがな
い。Here, the Pd metalloorganic spacer was selected because it has excellent solid solubility in both the first conductor Mo and the second conductor Cu,
It diffuses to form a solid solution, and also has a mechanical anchor effect and is electrically and mechanically stable, and a strong bonding layer can be obtained. At the same time, the insulating layer has no adhesive strength and does not impair the electrical and mechanical characteristics as in the first embodiment.
こうして得た製品の品質は実施例１と同様優れたもので
ある。The quality of the product thus obtained is excellent as in Example 1.
［実施例３］ 実施例１の方法で作製した絶縁層となるセラミック生基
板上に、第１導体層となるＷまたはMoの高融点金属を主
成分としたメタライズペーストをスクリーン印刷法によ
り配線を形成し、次にその上に絶縁層となるアルミナを
主成分とするセラミック系絶縁ペーストによりスクリー
ン印刷法により印刷層を重ね合わせて形成する。次に、
これを水素等の還元雰囲気、1400℃〜1700℃で焼成し
て、高融点金属を主成分とする第１導体層と絶縁層が一
体化してコファイヤード多層基板とする。その他の条件
は実施例１で述べた方法で行い、また、結果も同様に優
れたものである。[Example 3] On the ceramic raw substrate to be the insulating layer manufactured by the method of Example 1, a metallizing paste containing a high melting point metal of W or Mo as the first conductor layer as a main component was wired by a screen printing method. Then, a printing layer is formed on the insulating layer by a screen printing method using a ceramic insulating paste containing alumina as a main component to form an insulating layer. next,
This is fired in a reducing atmosphere such as hydrogen at 1400 ° C. to 1700 ° C., and the first conductor layer containing a refractory metal as a main component and the insulating layer are integrated to form a cofi yard multilayer substrate. The other conditions are the same as those described in Example 1, and the results are similarly excellent.
以上のように、本発明のメタライズ層は、メタロオーガ
ニックスペーストのスクリーン印刷法、ディスペンサー
等の常法で塗布し、焼成して形成できる。メッキ法のよ
うに温度、PH等の条件を調整する必要もなく、またメッ
キ液の管理は不要等の利点があり、その点でも生産性は
有利である。As described above, the metallized layer of the present invention can be formed by applying and baking by a conventional method such as a metallo organic space screen printing method or a dispenser. Unlike the plating method, there are advantages that there is no need to adjust conditions such as temperature and PH, and there is no need to control the plating solution. In that respect, productivity is also advantageous.
なお、その他上記のPtおよびPdを含めて、Ni、Cu、Au、
Rh、Ru、Re、CoおよびIrの１種または２種以上の成分か
らなるメタロオーガニックスペーストによるメタライズ
層においても上述したと同様のよい結果を得た。In addition, in addition to the above Pt and Pd, Ni, Cu, Au,
The same good results as described above were also obtained in the metallized layer made of a metalloorganic spacer composed of one or more components of Rh, Ru, Re, Co and Ir.
［発明の効果］ 以上の説明のように、本発明は生産性が高く、電気的、
機械的な品質に優れ、高信頼性のセラミック多層配線基
板およびその製造方法の提供という工業的に極めて優れ
た効果がある。[Effects of the Invention] As described above, the present invention has high productivity, electrical,
The ceramic multi-layer wiring board having excellent mechanical quality and high reliability and the method for manufacturing the same have an extremely excellent industrial effect.
第１図は本発明の一実施例のセラミック多層配線基板の
断面図である。 第２図は本発明の第１図の○部分拡大図で、構造を詳細
に示した断面図である。 第３図は本発明の実施例１と比較例１の引張強度の初期
値と冷熱サイクル後の変化を示した説明図である。 第４図は本発明の実施例１のＷ−Cu間の電圧−電流の関
係を示す特性図である。 第５図はメッキ法による従来例の課題を説明するための
第１導体層面の断面図である。 １…絶縁層、２…第１導体層、３…メタライズ層、４…
第２導体層、５…コファイヤード多層基板、６…第１導
体とメタライズとの固溶体層、７…第２導体とメタライ
ズとの固溶体層、８…穴。FIG. 1 is a sectional view of a ceramic multilayer wiring board according to an embodiment of the present invention. FIG. 2 is an enlarged view of part ◯ of FIG. 1 of the present invention and is a sectional view showing the structure in detail. FIG. 3 is an explanatory diagram showing the initial values of the tensile strength and the changes after the cooling / heating cycle in Example 1 and Comparative Example 1 of the present invention. FIG. 4 is a characteristic diagram showing a voltage-current relationship between W and Cu according to the first embodiment of the present invention. FIG. 5 is a cross-sectional view of the first conductor layer surface for explaining the problems of the conventional example by the plating method. 1 ... Insulating layer, 2 ... 1st conductor layer, 3 ... Metallization layer, 4 ...
Second conductor layer, 5 ... Cofiyard multilayer substrate, 6 ... Solid solution layer of first conductor and metallization, 7 ... Solid solution layer of second conductor and metallization, 8 ... Hole.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 長坂 崇 愛知県刈谷市昭和町一町目１番地 日本電 装株式会社内 (72)発明者 野村 徹 愛知県刈谷市昭和町一町目１番地 日本電 装株式会社内 (72)発明者 宮瀬 善行 愛知県刈谷市昭和町一町目１番地 日本電 装株式会社内 審査官 喜納 稔 (56)参考文献 特開 昭59−171195（ＪＰ，Ａ) 特開 昭58−30194（ＪＰ，Ａ) 特開 昭49−54859（ＪＰ，Ａ) 特開 昭61−258439（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takashi Nagasaka 1st town, Showa-cho, Kariya city, Aichi Prefecture Nihon Denso Co., Ltd. (72) Inventor Toru Nomura 1st town, Showa-cho, Kariya city, Aichi Japan (72) Inventor, Yoshiyuki Miyase, 1st Town, Showa-cho, Kariya City, Aichi Prefecture Minoru Kino (56) References, Examiner, Nippon Denso Co., Ltd. (JP) 59-171195 (JP, A) Kai 58-30194 (JP, A) JP 49-54859 (JP, A) JP 61-258439 (JP, A)
Claims (2)
層と、表面層に銅を主成分とする第２導体層とを備えた
セラミック多層配線基板において、第１導体層と第２導
体層との接続部にPt、Ni、Cu、Au、Rh、Ru、Re、Co、Pd
およびIrのいずれか１種または２種以上の成分からなる
メタロオーガニックスペーストを塗布し、焼成したメタ
ライズ層を備えたことを特徴とするセラミック多層配線
基板。1. A ceramic multilayer wiring board having an inner layer comprising a first conductor layer containing a refractory metal as a main component, and a surface layer comprising a second conductor layer containing a copper as a main component, wherein Pt, Ni, Cu, Au, Rh, Ru, Re, Co, Pd at the connection part with 2 conductor layers
A ceramic multi-layer wiring board comprising a metallized layer obtained by applying and firing a metalloorganic space consisting of one or more of Ir and Ir.
層と、表面層に銅を主成分とする第２導体層とを備えた
セラミック多層配線基板の製造方法において、（１）セ
ラミック生基板に高融点金属を主成分とする導体を塗
布、同時焼成し、第１導体層を有するコファイヤード多
層基板を形成し、（２）該コファイヤード多層基板表面
の該第１導体層が露出している部分に、Pt、Ni、Cu、A
u、Rh、Ru、Re、Co、PdおよびIrのいずれか１種または
２種以上の成分からなるメタロオーガニックスペースト
を塗布、焼成してメタライズ層を形成し、（３）次い
で、該メタライズ層を介して銅を主成分とする導体を塗
布、焼成し第２導体層を形成することを特徴とするセラ
ミック多層配線基板の製造方法。2. A method for manufacturing a ceramic multilayer wiring board, comprising: a first conductor layer containing a refractory metal as a main component in an inner layer; and a second conductor layer containing copper as a main component in a surface layer. A conductor containing a high melting point metal as a main component is applied to a ceramic green substrate and co-fired to form a cofiyard multilayer substrate having a first conductor layer, (2) the first conductor on the surface of the cofiyard multilayer substrate. Pt, Ni, Cu, A on the exposed layer
u, Rh, Ru, Re, Co, Pd, and a metalloorganic spacet consisting of two or more kinds of components are applied and baked to form a metallized layer, and (3) then the metallized layer. A method of manufacturing a ceramic multi-layer wiring board, characterized in that a conductor containing copper as a main component is applied via a layer and baked to form a second conductor layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1331791A JPH0693545B2 (en) | 1988-12-23 | 1989-12-21 | Ceramic multilayer wiring board and manufacturing method thereof |
| US07/631,853 US5156903A (en) | 1989-12-21 | 1990-12-21 | Multilayer ceramic substrate and manufacture thereof |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32745888 | 1988-12-23 | ||
| JP63-327458 | 1988-12-23 | ||
| JP1331791A JPH0693545B2 (en) | 1988-12-23 | 1989-12-21 | Ceramic multilayer wiring board and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03218693A JPH03218693A (en) | 1991-09-26 |
| JPH0693545B2 true JPH0693545B2 (en) | 1994-11-16 |
Family
ID=26572510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1331791A Expired - Fee Related JPH0693545B2 (en) | 1988-12-23 | 1989-12-21 | Ceramic multilayer wiring board and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0693545B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3286651B2 (en) * | 1993-12-27 | 2002-05-27 | 株式会社住友金属エレクトロデバイス | Ceramic multilayer wiring board, method of manufacturing the same, and conductive material for ceramic multilayer wiring board |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4954859A (en) * | 1972-09-27 | 1974-05-28 | ||
| JPS5830194A (en) * | 1981-08-14 | 1983-02-22 | 日本碍子株式会社 | Ceramic multilayer circuit board and method of producing same |
| JPS59171195A (en) * | 1983-03-18 | 1984-09-27 | 日本碍子株式会社 | Method of producing ceramic multilayer circuit board |
-
1989
- 1989-12-21 JP JP1331791A patent/JPH0693545B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03218693A (en) | 1991-09-26 |
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