JPH0691017B2 - Continuous vapor phase growth equipment - Google Patents
Continuous vapor phase growth equipmentInfo
- Publication number
- JPH0691017B2 JPH0691017B2 JP60115031A JP11503185A JPH0691017B2 JP H0691017 B2 JPH0691017 B2 JP H0691017B2 JP 60115031 A JP60115031 A JP 60115031A JP 11503185 A JP11503185 A JP 11503185A JP H0691017 B2 JPH0691017 B2 JP H0691017B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor phase
- phase growth
- continuous vapor
- continuous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P14/2905—
-
- H10P14/24—
-
- H10P14/3411—
Description
【発明の詳細な説明】 ［概要］ 本発明は、連続式気相成長装置であって、成長すべき基
板の表面に、上部から異物の落下による被着を防止する
ために、基板表面を下向きにして気相成長を行うように
したものである。DETAILED DESCRIPTION OF THE INVENTION [Outline] The present invention is a continuous vapor phase epitaxy apparatus, in which a substrate surface is directed downward in order to prevent deposition of foreign matter on the surface of the substrate to be grown due to dropping of foreign matter from above. Then, the vapor phase growth is performed.
［産業上の利用分野］ 本発明は、連続式気相成長装置に係わり、特に基板（以
下基板はシリコンウエハを対象とする）の表面に異物の
被着のない連続式気相成長装置の構造に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a continuous vapor phase growth apparatus, and more particularly to a structure of a continuous vapor phase growth apparatus in which no foreign matter is attached to the surface of a substrate (hereinafter, the substrate is a silicon wafer). It is about.
近時、半導体装置の製造工程では、気相成長方法が広範
囲に利用され、特に常圧下で行われる気相成長装置で
は、大量生産に適した連続式気相成長装置が利用されて
いる。2. Description of the Related Art Recently, vapor phase growth methods have been widely used in semiconductor device manufacturing processes, and particularly continuous vapor phase epitaxy apparatuses suitable for mass production have been used in vapor phase epitaxy apparatuses performed under normal pressure.
従来、この連続式気相成長装置では、気相成長がなされ
る基板は上向きに配置されてキャリアで搬送され、反応
ガスは基板の上方向から噴出される構造であったが、こ
のような構造では基板の表面に異物の落下があって、こ
れが成長膜面に異物として被着するため、成長膜面の品
質を損なうという不都合があるため、異物付着の恐れの
ない連続式気相成長装置が要望されている。Conventionally, in this continuous vapor phase growth apparatus, the substrate on which the vapor phase growth is performed is arranged upward and is carried by the carrier, and the reaction gas is ejected from above the substrate. In this case, foreign matter drops on the surface of the substrate, which adheres to the growth film surface as foreign matter, which impairs the quality of the growth film surface. Is requested.
［従来の技術］ 第４図は、従来の連続式気相成長装置の模式要部側断面
図、第５図はそのＸ−Ｘ部における正面断面図である。[Prior Art] FIG. 4 is a schematic cross-sectional side view of a main part of a conventional continuous vapor deposition apparatus, and FIG. 5 is a front cross-sectional view taken along line XX.
気相成長管１があり、キャリア２に所定間隔で取りつけ
られた基板ホルダ（図示せず）に、基板３がそれぞれ搭
載され、搬送機構４によって矢印の方向に移動するよう
になっている。The vapor phase growth tube 1 is provided, and the substrates 3 are mounted on the substrate holders (not shown) attached to the carrier 2 at predetermined intervals, and are moved by the transfer mechanism 4 in the direction of the arrow.
気相成長管には、反応ガスの供給孔５があり、供給され
る反応ガスはメッシュ状の孔６から、基板面に上方から
噴射する構造であって、また気相成長管には、基板を加
熱するために、加熱装置７が設けられている。The vapor phase growth tube has a reaction gas supply hole 5, and the supplied reaction gas has a structure in which it is sprayed from above through a mesh-shaped hole 6 onto the substrate surface. A heating device 7 is provided for heating the.
この連続式気相成長装置によって、例えば、シリコン基
板の表面に、酸化膜を気相成長によって形成する場合に
は、シラン（SiH4）ガスと酸素ガスを混合した反応ガス
を用いて、基板の温度を300℃〜450℃に加熱を行い、キ
ャリアの速度を10cm/分程度で移動すると、ほぼ150cmの
長さの成長管内を通過する間に、約１μｍの厚みの酸化
膜が成長する。With this continuous vapor phase growth apparatus, for example, when an oxide film is formed on the surface of a silicon substrate by vapor phase growth, a reaction gas obtained by mixing silane (SiH 4 ) gas and oxygen gas is used. When the temperature is heated to 300 ° C. to 450 ° C. and the carrier velocity is moved at about 10 cm / min, an oxide film having a thickness of about 1 μm grows while passing through a growth tube having a length of about 150 cm.
然しながら、このような構造の連続式気相成長装置で
は、キャリア表面に載置された基板の表面に上方から異
物が落下して、基板の表面に被着するという欠点があ
る。However, in the continuous vapor phase growth apparatus having such a structure, there is a drawback that foreign matter drops from above onto the surface of the substrate placed on the carrier surface and adheres to the surface of the substrate.
［発明が解決しようとする問題点］ 従来の、連続式気相成長装置では、基板が上向きに配置
されているために、上方から基板表面に異物が落下し
て、基板の表面に被着し、基板表面の品質を損なうこと
が問題点である。[Problems to be Solved by the Invention] In the conventional continuous vapor phase growth apparatus, since the substrate is arranged upward, foreign matter drops onto the substrate surface from above and adheres to the surface of the substrate. The problem is that the quality of the substrate surface is impaired.
［問題点を解決するための手段］ 上記問題点を解決するために、本発明による気相成長装
置を第１図に示しているが、その解決の手段は、反応ガ
スの雰囲気を含む気相反応管と、基板を所定の温度に加
熱する加熱部と、基板をキャリアに載置して移動させる
連続搬送機構を備えた連続式気相成長装置で、気相成長
がなされる基板面を、従来は上向きに載置したが、本発
明では下向きに載置して、基板面に反応ガスを下方から
供給するようにし、基板表面に上方から落下する異物付
着を無くしたものである。[Means for Solving the Problems] In order to solve the above problems, a vapor phase growth apparatus according to the present invention is shown in FIG. 1. The means for solving the problems is a vapor phase containing a reaction gas atmosphere. A reaction tube, a heating unit for heating the substrate to a predetermined temperature, and a continuous vapor deposition apparatus equipped with a continuous transfer mechanism for placing the substrate on a carrier to move the substrate surface on which vapor phase growth is performed, Conventionally, the device is placed facing upward, but in the present invention, the device is placed facing downward so that the reaction gas is supplied to the substrate surface from below, thereby eliminating the adhesion of foreign matter falling onto the substrate surface from above.
［作用］ 本発明は、連続式気相成長装置で、従来キャリアの上に
基板を上向きに載置していたが、上方から異物が落下す
るのを防止するために、基板を下向きに保持しながら、
気相成長を行うことにより、基板に落下する上方からの
異物が基板の表面に付着しないために、異物付着のない
高品質の基板の気相成長を可能にしたものである。[Operation] The present invention is a continuous vapor phase growth apparatus in which a substrate is conventionally mounted on a carrier in an upward direction. However, in order to prevent foreign matter from falling from above, the substrate is held downward. While
By performing the vapor phase growth, foreign matter falling onto the substrate from above does not adhere to the surface of the substrate, so that high quality vapor phase growth of the substrate without foreign matter adhesion is made possible.
［実施例］ 第１図は、本発明による連続式気相成長装置の模式要部
側断面図であり、第２図は、第１図のＸ−Ｘ部における
正面断面図である。[Example] FIG. 1 is a schematic side sectional view of a main part of a continuous vapor phase growth apparatus according to the present invention, and FIG. 2 is a front sectional view taken along line XX of FIG.
気相成長管11があり、キャリア12に取りつけられたウエ
ハホルダ（図示せず）に載置された基板13が搬送機構14
によって矢印の方向に移動している。There is a vapor growth tube 11, and a substrate 13 placed on a wafer holder (not shown) attached to a carrier 12 is a transfer mechanism 14
Is moving in the direction of the arrow.
気相成長管の下部には、反応ガスの供給孔15があって、
供給された反応ガスはメッシュ16を介して、基板に下方
から反応ガスを噴射する構造になっている。At the bottom of the vapor phase growth tube, there is a reaction gas supply hole 15,
The supplied reaction gas has a structure in which the reaction gas is sprayed from below onto the substrate through the mesh 16.
気相成長管内の基板が載置されるキャリアの上部には、
基板の温度を上げるために、加熱装置17が設けられてい
る。At the top of the carrier where the substrate in the vapor phase growth tube is placed,
A heating device 17 is provided to raise the temperature of the substrate.
例えば、この連続式気相成長装置によって、シリコン基
板の表面に酸化膜を形成する場合には、シラン（SiH4）
と酸素ガスを混合した反応ガスを用いて、基板の温度を
300℃〜400℃の温度にして気相成長を行うことができ
る。For example, when an oxide film is formed on the surface of a silicon substrate with this continuous vapor deposition apparatus, silane (SiH 4 )
The temperature of the substrate can be
Vapor growth can be performed at a temperature of 300 ° C to 400 ° C.
第３図は、基板を支持する基板ホルダーの一実施例を示
す平面図である。FIG. 3 is a plan view showing an embodiment of the substrate holder for supporting the substrate.
キャリア12には所定間隔の位置に、基板ホルダが、順次
基板ホルダ18A、18Bと固定されるが、この基板ホルダに
は、基板ホルダ18Aに示すように、基板の気相成長面を
露出する面積に相当する開口部20と、その基板の周辺領
域に、基板を載置する載置部21が段差として設けられて
いる。Substrate holders are sequentially fixed to the carrier 12 at predetermined intervals, and the substrate holders 18A and 18B are sequentially fixed. In this substrate holder, as shown in the substrate holder 18A, the area where the vapor phase growth surface of the substrate is exposed is exposed. An opening 20 corresponding to the above and a mounting portion 21 on which the substrate is mounted are provided as steps in the peripheral region of the substrate.
基板ホルダＢは、基板ホルダの基板載置部21に基板13を
基板表面を下方向にして載置した状態を示している。The substrate holder B shows a state in which the substrate 13 is placed on the substrate placing portion 21 of the substrate holder with the substrate surface facing downward.
このような気相成長装置の構造と基板の支持方法を採用
することにより、気相成長される基板表面は、気相成長
管内を移動中、常に下向きになっているため、上方から
の異物の落下があっても、基板の裏面に被着するだけな
ので、気相成長された基板表面の品質には全く影響を与
えないという利点がある。By adopting such a structure of the vapor phase growth apparatus and a method of supporting the substrate, the surface of the substrate to be vapor-phase grown is always facing downward while moving in the vapor-phase growth tube, so that the foreign matter from above is prevented. Even if there is a drop, since it only adheres to the back surface of the substrate, there is an advantage that it does not affect the quality of the vapor-deposited substrate surface at all.
［発明の効果］ 以上、詳細に説明したように、本発明による連続式気相
成長装置を採用することにより、成長される基板表面に
異物被着がなく、その結果良質の基板を得ることが出来
るという効果大なるものがある。[Effects of the Invention] As described in detail above, by adopting the continuous vapor deposition apparatus according to the present invention, foreign matter is not deposited on the surface of a substrate to be grown, and as a result, a good quality substrate can be obtained. There is a great effect that you can do it.
第１図は、本発明による連続式気相成長装置の模式要部
側断面図、 第２図は、本発明による連続式気相成長装置の模式要部
正面断面図、 第３図は、基板を支持する基板ホルダの模式平面図、 第４図は、従来の連続式気相成長装置の模式要部側断面
図、 第５図は、従来の連続式気相成長装置の正面断面図であ
る。 図において、 11は気相成長管、12はキャリア、 13は基板、14は搬送機構、 15は反応ガスの供給孔、16はメッシュ、 17は加熱装置、 18A、18Bは基板ホルダ、 20は開口部、21は載置部、 をそれぞれ示している。FIG. 1 is a schematic cross-sectional side view of a main part of a continuous vapor phase growth apparatus according to the present invention, FIG. 2 is a front cross-sectional view of a main part of a continuous vapor phase growth apparatus according to the present invention, and FIG. 4 is a schematic plan view of a substrate holder that supports a substrate, FIG. 4 is a schematic side sectional view of a conventional continuous vapor deposition apparatus, and FIG. 5 is a front sectional view of a conventional continuous vapor deposition apparatus. . In the figure, 11 is a vapor growth tube, 12 is a carrier, 13 is a substrate, 14 is a transfer mechanism, 15 is a reaction gas supply hole, 16 is a mesh, 17 is a heating device, 18A and 18B are substrate holders, and 20 is an opening. Reference numeral 21 denotes a mounting portion.
Claims (1)
置（17）とキャリア（12）及び搬送機構（14）を具備し
た連続式気相成長装置において、 気相成長がなされる基板（13）面を下向きに載置して、 該基板面の下方から反応ガスを供給するようにしたこと
を特徴とする連続式気相成長装置。1. A continuous vapor phase growth apparatus equipped with a vapor phase growth tube (11) containing a reaction gas, a heating device (17), a carrier (12) and a transfer mechanism (14). A continuous vapor phase growth apparatus characterized in that a substrate (13) surface is placed downward and a reaction gas is supplied from below the substrate surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60115031A JPH0691017B2 (en) | 1985-05-27 | 1985-05-27 | Continuous vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60115031A JPH0691017B2 (en) | 1985-05-27 | 1985-05-27 | Continuous vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61271822A JPS61271822A (en) | 1986-12-02 |
| JPH0691017B2 true JPH0691017B2 (en) | 1994-11-14 |
Family
ID=14652499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60115031A Expired - Lifetime JPH0691017B2 (en) | 1985-05-27 | 1985-05-27 | Continuous vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0691017B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01257322A (en) * | 1987-11-30 | 1989-10-13 | Daido Sanso Kk | Manufacture of semiconductor |
| JPH01230227A (en) * | 1987-11-30 | 1989-09-13 | Daido Sanso Kk | Manufacture of semiconductor |
| JPH01273310A (en) * | 1988-04-25 | 1989-11-01 | Nec Corp | Manufacturing device for semiconductor integrated circuit device |
| US6090211A (en) * | 1996-03-27 | 2000-07-18 | Matsushita Electric Industrial Co., Ltd. | Apparatus and method for forming semiconductor thin layer |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57113214A (en) * | 1980-12-29 | 1982-07-14 | Seiko Epson Corp | Manufacture of amorphous semiconductor film |
| JPS5850735A (en) * | 1981-09-21 | 1983-03-25 | Fuji Electric Corp Res & Dev Ltd | Mass production-type apparatus for thin film formation |
| JPS59167012A (en) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | Plasma cvd equipment |
-
1985
- 1985-05-27 JP JP60115031A patent/JPH0691017B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61271822A (en) | 1986-12-02 |
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