JPH0690529B2 - Light receiving member - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to light (here, light in a broad sense, ultraviolet light, visible light,
The present invention relates to a light receiving member sensitive to electromagnetic waves such as infrared rays, X rays, and γ rays). More specifically, it relates to a light receiving member suitable for using coherent light such as laser light.

[Description of Prior Art]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light receiving member with laser light modulated according to the digital image information, and then the latent image is developed, Further, a method of recording an image is known, in which transfer, fixing and the like are performed as necessary. In particular, in the image forming method by electrophotography, a small and inexpensive He-Ne laser or semiconductor laser ( It is common to carry out image recording using a light emission wavelength of 650 to 820 nm).

By the way, as a light receiving member for electrophotography suitable when using a semiconductor laser, in addition to the fact that the matching of the light sensitive region is superior to other types of light receiving members,
The Vickers hardness is high, and the problem of pollution is small. It is evaluated, for example, in JP-A-54-86341 and JP-A-56-837.
Attention has been paid to a light receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as "a-Si") as disclosed in Japanese Patent No. 46.

However, in the above-mentioned light receiving member, when the light receiving layer is an a-Si layer having a single layer structure, it is possible to secure a dark resistance of 10 ¹² Ωcm or more required for electrophotography while maintaining its high photosensitivity. Means that it is necessary to structurally contain hydrogen atoms, halogen atoms, or boron atoms in addition to these in a controlled amount in a specific amount range in the layer. Is required to be strictly controlled, and there are considerable restrictions on the tolerance of the design of the light receiving member. It has been proposed to improve the design tolerance by making the high photosensitivity effective even if the dark resistance is low to some extent. That is, for example, JP 54-121743 A, JP 57-
No. 4053, JP-A-57-4172, the light-receiving layer has a layered structure of two or more layers in which layers having different conductivity characteristics are laminated, and a depletion layer is formed inside the light-receiving layer, or JP-A-57-52178, 52179, 52180, 58159
No. 58160, No. 58161, each of which has a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or / and on the upper surface of the photoreceptive layer. A light receiving member having improved dark resistance has been proposed.

However, such a light-receiving layer having a multi-layered light-receiving layer has a variation in the layer thickness of each layer, and when laser recording is performed using this, the laser beam is a coherent monochromatic light. From the free surface on the side irradiated with laser light, various kinds of layers constituting the light-receiving layer and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as “interface”). Often, each of the reflected light that is reflected causes interference.

This interference phenomenon is a so-called
It appears as an interference fringe pattern, which causes a defective image. In particular, when forming a halftone image with high gradation, a blocking image with extremely poor discrimination is provided.

Another important point is that the absorption of the laser light in the light-receiving layer decreases as the wavelength region of the semiconductor laser light used becomes longer, which causes a problem that the interference phenomenon becomes remarkable. .

That is, for example, in a structure having two or more layers (multilayer), there is an interference effect for each of those layers, and the interferences act synergistically to form an interference fringe pattern. However, there is a problem that the transfer fringes affect the transfer member, and the interference fringes corresponding to the interference fringes are transferred and fixed on the transfer member to appear on the visible image, resulting in a defective image.

As a measure for solving such a problem, (a) a method of diamond-cutting the surface of a support to form irregularities of ± 500Å to ± 10000Å to form a light-scattering surface (for example, JP-A-58-162975).
(See JP-A-57-165845), (b) A method of providing a light absorbing layer by black-anodizing the surface of an aluminum support or dispersing carbon, a coloring pigment, and a dye in a resin (for example, JP-A-57-165845). (C) A method of providing a light-scattering / antireflection layer on the surface of a support by subjecting the surface of the aluminum support to a satin-finished alumite treatment or providing sandblasted fine irregularities in the shape of a grain (for example, a special method). Kaisho
No. 57-16554) is proposed.

Although these proposed methods have some results, they are not sufficient to completely eliminate the interference fringe pattern appearing on the image.

That is, in the method (a), a large number of irregularities of a specific t are provided on the surface of the support, which prevents the appearance of an interference fringe pattern due to the light scattering effect for a while.
Since the specularly reflected light component still remains as the light scattering, the interference fringe pattern due to the specularly reflected light remains, and the irradiation spot spreads due to the light scattering effect on the surface of the support, and The resolution will be reduced.

With regard to the method (b), the black alumite treatment cannot completely absorb the light, and the reflected light on the surface of the support remains. Further, when providing the color pigment dispersed resin layer,
When the a-Si layer is formed, the degassing phenomenon occurs in the resin layer, the layer quality of the formed light-receiving layer is significantly deteriorated, and the resin layer is damaged by the plasma during the formation of the a-Si layer. Therefore, there is a problem that the original absorption function is reduced and the subsequent a-Si layer formation is adversely affected by the deterioration of the surface state.

Regarding the method of (c), for example, in terms of incident light, a part of the incident light is reflected on the surface of the light-receiving layer to become reflected light,
The remainder enters the inside of the light receiving layer and becomes transmitted light. On the surface of the support, part of the transmitted light is scattered and becomes diffused light, and the rest is specularly reflected and becomes reflected light, and part of it becomes outgoing light and goes out. However, since the emitted light is a component that interferes with the reflected light and remains in any case, the interference fringe pattern does not completely disappear.

By the way, in order to prevent interference in this case, there is an attempt to increase the diffusivity of the surface of the support so that multiple reflection inside the light-receiving layer does not occur. The light diffuses to cause halation, which ultimately reduces the resolution.

In particular, in the light receiving member having a multi-layered structure, even if the surface of the support is irregularly roughened, the light reflected by the surface of the first layer, the second light
The reflected light from the layer and the specularly reflected light from the surface of the support interfere with each other to form an interference fringe pattern according to the multilayer thickness of the light receiving member. Therefore, in the light receiving member having a multilayer structure, it is impossible to completely prevent the interference fringes by irregularly roughening the surface of the support.

In addition, when the surface of the support is irregularly roughened by a method such as sandblasting, the roughness varies widely among the lots, and even in the same lot, the roughness is uneven. There is a management problem. In addition, relatively large projections are often formed randomly, and such large projections cause local breakdown of the photoreceptor layer.

Also, when the surface of the support is simply roughened,
Since the light receiving layer is deposited along the uneven shape of the surface of the support, the uneven surface of the uneven surface of the support and the uneven surface of the uneven surface of the light receiving layer are parallel to each other, and the incident light is bright at that portion. Portions and dark areas are caused, and a light and dark stripe pattern appears in the entire light receiving layer due to the non-uniformity of the layer thickness of the light receiving layer. Therefore, it is not possible to completely prevent the occurrence of interference fringe patterns only by regularly roughening the surface of the support.

Also, when a light-receiving layer having a multi-layered structure is deposited on a support whose surface is regularly roughened, regular reflection light on the support surface,
In addition to the interference with the reflected light on the surface of the light receiving layer, the interference due to the reflected light at the interface between the layers is added, so that the degree of appearance of the interference fringe pattern of the light receiving member having a further structure becomes more complicated.

[Object of the Invention]

An object of the present invention is to eliminate the above-mentioned problems and satisfy various requirements for a light-receiving member having a light-receiving layer mainly composed of a-Si.

That is, the main object of the present invention is that electrical, optical, and photoconductive properties are substantially stable regardless of the use environment, are substantially stable to light, and have excellent light fatigue resistance, and even when repeatedly used, a deterioration phenomenon. To provide a light-receiving member having a light-receiving layer composed of a-Si, which is excellent in durability and moisture resistance, has no or almost no residual potential observed, and is easy to manage in production. is there.

Another object of the present invention is to provide a photoreceptive member having a photoreceptive layer composed of a-Si, which has a high photosensitivity in the entire visible light region, an excellent matching with a semiconductor laser, and a fast photoresponse. To do.

Still another object of the present invention is to provide a light-receiving member having a light-receiving layer composed of a-Si, which has high photosensitivity, high SN ratio characteristics, and high electrical withstand voltage.

Another object of the present invention is to provide excellent adhesion between the layer provided on the support and the support or between the layers of the laminated layers,
Structure-strict and stable, high layer quality, a-
It is to provide a light receiving member having a light receiving layer composed of Si.

Still another object of the present invention is suitable for image formation using coherent monochromatic light, and even during long-term repeated use, there is no appearance of interference fringe patterns and spots during reversal development, and there are no image defects or images. To provide a light-receiving member having a light-receiving layer composed of a-Si, capable of obtaining a high-quality image with high density, high density, clear halftone, and no blurring. It is in.

[Structure of Invention]

The present inventors have earnestly studied to overcome the above-mentioned problems of the conventional light-receiving member and achieve the above-mentioned object, and as a result, have obtained the following findings, and based on the findings, the present invention Was completed.

That is, the light receiving member of the present invention, on the support, a first layer composed of an amorphous material containing silicon atoms and at least one of germanium atoms and tin atoms, and silicon atoms, A light-receiving member having a second layer composed of an amorphous material containing at least one selected from oxygen atom, carbon atom and nitrogen atom, wherein the surface of the support has a depression. The present invention is characterized in that the width D is 500 μm or less, and the curvature radius R of the depression and the width D have unevenness due to a plurality of spherical trace depressions with 0.035 ≦ D / R.

By the way, the findings obtained by the inventors of the present invention as a result of their earnest studies are an outline, in a light-receiving member having a plurality of layers on a support, the surface of the support is provided with irregularities due to a plurality of spherical trace depressions. As a result, the problem of the interference fringe pattern that appears during image formation is solved.

This finding is based on the factual relations obtained by various experiments that the present inventors have tried.

This will be described below with reference to the drawings in order to facilitate understanding.

FIG. 1 is a schematic view showing a layer structure of a light receiving member 100 according to the present invention, on a support 101 having an uneven shape with a plurality of minute spherical trace dents, along the inclined surface of the unevenness, A second layer 10 having a first layer 102 'and a free surface 103.
2 shows a light receiving member having a light receiving layer 102 of 2 ″.

2 and 3 are views for explaining the problem of the interference fringe pattern in the light receiving member of the present invention.

FIG. 3 is an enlarged view showing a part of a conventional light receiving member in which a light receiving layer having a multilayer structure is deposited on a support whose surface is regularly roughened. In the figure, 301 is the first layer, 3
02 indicates the second layer, 303 indicates the free surface, and 304 indicates the interface between the first layer and the second layer. As shown in FIG.
When the surface of the support is simply roughened by a means such as cutting, the light-receiving layer is usually formed along the irregular shape of the surface of the support, and therefore the uneven surface of the surface of the support is uneven. And the inclined surface of the unevenness of the light receiving layer have a parallel relationship.

Due to this, for example, the light receiving layer is the first layer 301.
Then, in the light receiving member having a multilayer structure composed of two layers, that is, the second layer 302, for example, the following problems are constantly caused. That is, since the interface 304 between the first layer and the second layer and the free surface 303 are in a parallel relationship, the interface 30
The reflected light R _e2 in the free surface and the reflected light R _e1 in four directions coincide, the interference fringes occur in accordance with the thickness of the second layer.

FIG. 2 is an enlarged view of a part of FIG. 1, and as shown in FIG. 2, the light receiving member of the present invention has an uneven shape formed by a plurality of minute spherical trace dents on the surface of the support. Since the light-receiving layer thereon is deposited along the uneven shape, for example, the light-receiving layer is a multilayer light-receiving member having a first layer 201 and a second layer 202. That is, the interface 204 between the first layer 201 and the second layer 202, and the free surface 203 are
Each is formed into an uneven shape due to a spherical trace dent along the uneven shape of the support surface. Assuming that the radius of curvature of the spherical trace depression formed on the interface 204 is R ₁ and the radius of curvature of the spherical trace depression formed on the free surface is R ₂ , R ₁ and R ₂ are R ₁ ≠ R ₂
Therefore, the reflected light on the interface 204 and the reflected light on the free surface 203 have different reflection angles, that is, θ ₁ and θ ₂ in FIG. ₂ are θ ₁ ≠ θ _2. , The direction is different, and the wavelength shift represented by l ₁ + l ₂ −l ₃ using l ₁ , l ₂ , and l ₃ shown in FIG. Shear ring interference corresponding to the ring phenomenon occurs, and the interference fringes are dispersed in the depression. As a result, even if microscopic interference fringes appear, the images that appear through such a light receiving member will not be visually perceptible.

That is, the use of a support having a surface shape that becomes harder means that a light-receiving member formed by forming a multi-layered light-receiving layer on the support is such that the light passing through the light-receiving layer has a layer interface and a support. It is possible to effectively prevent the formed image from forming a striped pattern due to the reflection on the surface and the interference between them, and to obtain a light receiving member capable of forming an excellent image.

By the way, the radius of curvature R and the width D of the uneven shape due to the spherical trace dents on the surface of the support of the light receiving member of the present invention efficiently achieve the effect of preventing the occurrence of interference fringes in the light receiving member of the present invention. It is an important factor to do.
The present inventors have made the following discoveries as a result of various experiments. That is, the radii of curvature R and D are as follows: If the above condition is satisfied, there will be 0.5 or more Newton rings due to the shear ring interference in each dent. Furthermore, the following formula: If the above condition is satisfied, there will be one or more Newton rings due to shear ring interference in each of the dents.

Therefore, in order to prevent the generation of the interference fringes in the light receiving member by dispersing the interference fringes generated in the entire light receiving member in the respective trace depressions, Is 0.035, preferably 0.055 or more.

In addition, the width D of the unevenness due to the trace depression is 500 μ at the maximum.
m or less, preferably 200 μm or less, more preferably 1
It is desirable to set it to 00 μm or less.

The light-receiving layer formed on a support having a specific surface shape as described above is composed of a first layer and a second layer, and the first layer comprises a silicon atom and a germanium atom or a tin atom. Which is composed of an amorphous material containing at least one of, and particularly preferably, a silicon atom (Si) and at least one of a germanium atom (Ge) or a tin atom (Sn), and preferably a hydrogen atom (H). And an amorphous material containing at least one of halogen atoms (X) [hereinafter referred to as “a-Si (Ge, Sn) (H, X)”. ], And may further contain a substance that controls conductivity, if necessary. The first layer may have a multilayer structure, and particularly preferably has a charge injection blocking layer containing a substance that controls conductivity as one of the constituent layers and / or a barrier layer. As one of the constituent layers.

Further, the second layer is composed of an amorphous material containing silicon atoms and at least one selected from oxygen atoms, carbon atoms and nitrogen atoms, particularly preferably,
Silicon atom (Si) and at least one selected from oxygen atom (O), carbon atom (C) and nitrogen atom (N), and preferably at least one of hydrogen atom (H) and halogen atom (X). An amorphous material containing one and the other [hereinafter referred to as "a-Si (O, C, N) (H, X)". ] Is composed.

The light receiving member of the present invention has a first layer and a second layer laminated on a support having a specific surface shape as described above, and further has a first layer. For the purpose of preventing interference, a localized region containing a relatively large amount of germanium atoms and / or tin atoms is formed at the end of the first layer on the side of the support, as described later in detail. Or / and / or a localized region (that is, a charge blocking layer) containing a relatively large amount of a substance that controls conductivity is formed at the end of the first layer on the support side, or / and It is desirable to form a barrier layer on the end portion of the layer on the side of the support, and in the light receiving member of the present invention having such a structure, a plurality of interfaces of the plurality of layers are formed on the support.

Regarding the preparation of the light-receiving layer of the light-receiving member of the present invention, it is necessary to accurately control the layer thickness at the optical level in order to efficiently achieve the above-mentioned object of the present invention. Vacuum deposition methods such as the sputtering method, the sputtering method, and the ion plating method are usually used.
A CVD method, a thermal CVD method or the like can also be adopted.

The specific contents of the light receiving member of the present invention will be described below with reference to the illustrated embodiments, but the light receiving member of the present invention is not limited to these embodiments.

FIG. 1 is a diagram schematically showing the layer structure of the light receiving member of the present invention, in which 100 is a light receiving member, 1
01 is a support, 102 is a first layer, 103 is a second layer, and 104 is a free surface.

Support The surface of the support 101 in the light receiving member of the present invention has unevenness smaller than the resolving power required for the light receiving member, and the unevenness is due to a plurality of spherical dents.

Hereinafter, the shape of the surface of the support in the light receiving member of the present invention and a preferred production example thereof will be described with reference to FIGS. 4 and 5, but the surface shape of the support in the light receiving member of the present invention and the method for producing the same. Are not limited by these.

FIG. 4 schematically shows a typical example of the shape of the surface of the support in the light receiving member of the present invention by partially enlarging a part of the uneven shape.

In FIG. 4, 401 is a support, 402 is the surface of the support, 403 is a rigid spherical body, and 404 is a spherical dent.

Further, FIG. 4 also shows an example of a preferable manufacturing method for obtaining the surface shape of the support. That is, a rigid true sphere
It is shown that the spherical depression 404 can be formed by causing the 403 to naturally fall from a position of a predetermined height above the support surface 402 and colliding with the support surface 402. Then, a plurality of rigid true spheres 403 having substantially the same diameter R ′ are used, and these are dropped from the same height h at the same time or at a time, so that the support surface 402 has substantially the same radius of curvature R and It is possible to form a plurality of spherical imprints 404 having approximately the same width D.

FIG. 5 shows some typical examples of the support body on the surface of which the uneven shape is formed by a plurality of spherical trace depressions as described above.

In the example shown in FIG. 5 (A), a plurality of spheres 503, 503, ... Having substantially the same diameter are regularly dropped from substantially the same height on different portions of the surface 502 of the support 501, and the spheres 503, 503 ,. A plurality of trace dents 504, 504, ... Having a radius of curvature and substantially the same width are densely formed so as to overlap each other to form a regular uneven shape. In this case, in order to form the recesses 504, 504, ... Which overlap each other, the sphere 5 is arranged so that the collision times of the sphere 503 on the support surface 502 are shifted from each other.
Needless to say, it is necessary to let 03, 503, ... fall naturally.

Further, in the example shown in FIG. 5 (B), two types of spheres 503, 503 ′, ... Having different diameters are dropped from substantially the same height or different heights, and then, on the surface 502 of the support 501, A plurality of recesses 504, 504 ', ... Having two kinds of curvature radii and two kinds of widths are densely formed so as to overlap each other, thereby forming unevenness with irregular surface heights. .

Further, in the example shown in FIG. 5 (C) (front view and sectional view of the surface of the support), a plurality of spheres 503, 503, ... Of substantially the same diameter are provided on the surface 502 of the support 501 at substantially the same height. By irregularly dropping, a plurality of depressions 504, 504, ... Having substantially the same radius of curvature and a plurality of types of widths are formed so as to overlap each other, and irregular irregularities are formed.

As described above, by dropping the rigid true sphere on the surface of the support, it is possible to form an uneven shape due to the spherical trace depression, but in this case, the diameter of the rigid true sphere, the height to be dropped,
By selecting various conditions such as the hardness of the rigid true sphere and the surface of the support, or the amount of spheres to be dropped, a plurality of spherical trace depressions having a desired radius of curvature and width can be formed on the surface of the support with a predetermined density. Can be formed with. That is, by selecting the above conditions, the height and pitch of the unevenness formed on the surface of the support can be freely adjusted according to the purpose, and a support having a desired unevenness on the surface can be obtained. Obtainable.

And, regarding the support of the light receiving member to the surface of the uneven shape, a lathe, a method of creating by cutting with a diamond cutting tool using a milling machine, etc. has been proposed and is an effective method as such, In this method, it is indispensable to use cutting oil, remove chips that are inevitably generated by cutting, and remove cutting oil that remains on the cutting surface, and in the end, processing is complicated and efficient. In the present invention, since the uneven surface shape of the support is formed by the spherical trace depressions as described above, the above problem is completely eliminated and a desired uneven surface support is obtained. It can be created efficiently and easily.

The support 101 used in the present invention may be either conductive or electrically insulating. As the conductive support, for example, NiCr, stainless steel, Al, Cr, Mo, A
Examples include metals such as u, Nb, Ta, V, Ti, Pt, and Pb, or alloys thereof.

Examples of the electrically insulating support include films or sheets of synthetic resin such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene and polyamide, glass, ceramics, paper and the like. It is preferable that at least one surface of these electrically insulating supports is subjected to a conductive treatment, and a light receiving layer is provided on the surface side subjected to the conductive treatment.

For example, glass is NiCr, Al, Cr, M on the surface.
o, Au, Ir, Nb, Ta, V, Ti, Pt, Pd, In ₂ O ₃ , SnO ₂ , IT
Conductivity is provided by providing a thin film made of O (In ₂ O ₃ + SnO ₂ ), or NiCr, Al, Ag, Pb, Zn, Ni, Au, in the case of a synthetic resin film such as a polyester film,
A thin film of a metal such as Cr, Mo, Ir, Nb, Ta, V, Tl, Pt is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal, It imparts conductivity to the surface. The shape of the support may be any shape such as a cylindrical shape, a belt shape, and a plate shape, but the shape can be appropriately determined depending on the application and the desire. For example, the light receiving member 100 of FIG.
When used as an electrophotographic image forming member, in the case of continuous high speed copying, an endless belt shape or a cylindrical shape is desirable. The thickness of the support is appropriately determined so that a desired light receiving member can be formed, but when flexibility is required as the light receiving member, the function as a support is sufficiently exerted. It can be made as thin as possible within the range. However, in terms of mechanical strength and the like in terms of manufacturing and handling of the support, it is usually 10 μm or more.

Next, in the case where the light receiving member of the present invention is used as a light receiving member for electrophotography, an example of an apparatus for manufacturing the surface of the support will be described with reference to FIGS. 6 (A) and 6 (B). However, the present invention is not limited thereby.

As a support for the light-receiving member for electrophotography, aluminum alloy or the like is subjected to ordinary extrusion processing to form a boathole tube or a mandrel tube, and a drawn tube obtained by further drawing is subjected to heat treatment or adjustment as necessary. A cylindrical (cylindrical) substrate that has been subjected to a treatment such as quality is used.
Using the manufacturing apparatus shown in FIGS. (A) and (B), an uneven shape is formed on the surface of the support.

Examples of spheres used for forming the above-mentioned uneven shape on the surface of the support include metal such as stainless steel, aluminum, steel, nickel and brass, and various hard spheres such as ceramics and plastics. For reasons of cost reduction, stainless steel and steel rigid spheres are preferable. The hardness of the sphere may be higher or lower than the hardness of the support, but when the sphere is repeatedly used, it is preferably higher than the hardness of the support.

FIGS. 6 (A) and 6 (B) are schematic cross-sectional views of the entire manufacturing apparatus, 601 is an aluminum cylinder for making a support, and the cylinder 601 has the surface finished in advance to an appropriate smoothness. May be. The cylinder 601 is rotatably supported by a rotary shaft 602, and is driven by an appropriate driving means 603 such as a motor so as to be rotatable about its axis. The rotation speed is appropriately determined in consideration of the density of the spherical trace depressions to be formed and the supply amount of the rigid true sphere,
Controlled.

Reference numeral 604 denotes a drop device for naturally dropping the rigid true sphere 605. The ball feeder 606 for storing and dropping the rigid true sphere 605 swings so that the rigid true sphere 605 easily falls from the feeder 606. A vibrating machine 607, a collection tank 60 for collecting the rigid spherical body 605 that collides with the cylinder and falls.
8. Feeder 606 with rigid spherical body 605 collected in collection tank 608
Ball feeder 609, feeder 609 for pipe transport to
A cleaning device 610 for cleaning the rigid spherical body in the middle of the process, a liquid reservoir 611 for supplying cleaning liquid (solvent etc.) to the cleaning device 610 via a nozzle, etc., a recovery tank 612 for recovering the liquid used for cleaning, etc. It is configured.

The amount of the rigid spherical body that naturally falls from the feeder 606 is appropriately adjusted depending on the degree of opening / closing of the drop opening 613, the degree of rocking by the vibrator 607, and the like.

Light-Receiving Layer First Layer In the light-receiving member of the present invention, on the above-mentioned support 101, a silicon atom, at least one of a germanium atom and a tin atom, and preferably at least a hydrogen atom and a halogen atom. Further, a first layer 102 composed of an amorphous material containing one of them is laminated, and further, the first layer 102 can contain a substance for controlling conductivity as necessary, It is desirable to have a charge injection blocking layer or / and a barrier layer containing a relatively large amount of a substance for controlling conductivity at the end portion on the support side.

In the present invention, as the halogen atom that can be contained in the first layer, specifically, fluorine, chlorine,
Examples thereof include bromine and iodine, with fluorine and chlorine being particularly preferable. Then, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer or the sum of the amounts of hydrogen atoms and halogen atoms (H +
X) is preferably 0.01 to 40 atomic%, more preferably 0.
05-30 atomic%, optimally 0.1-25 atomic% is desirable.

Further, in the light receiving member of the present invention, the layer thickness of the first layer is one of important factors for efficiently achieving the object of the present invention, and the light receiving member is provided with desired characteristics. As described above, it is necessary to pay sufficient attention when designing the light receiving member, and usually 1 to 100 μm, but preferably 1 to 80 μm.
μ, and more preferably 2 to 50 μ.

By the way, the purpose of incorporating a germanium atom and / or a tin atom in the first layer of the light receiving member of the present invention is mainly to improve the absorption spectrum characteristics on the long wavelength side of the light receiving member.

That is, by containing a germanium atom and / or a tin atom in the first layer, the light-receiving member of the present invention exhibits various excellent properties, but particularly in the visible light region. It has excellent photosensitivity to light of wavelengths in the entire range from relatively short wavelengths to relatively long wavelengths, and has fast photoresponsiveness. And this is especially remarkable when a semiconductor laser is used as a light source.

In the first layer in the present invention, germanium atoms and / or tin atoms are contained in the entire layer region in a uniform distribution state or in a non-uniform distribution state. (Here, the uniform distribution state means that the distribution concentration of germanium atoms and / or tin atoms is uniform in the plane direction parallel to the support surface of the first layer, and also in the layer thickness direction of the first layer. It means that the distribution concentration of germanium atoms and / or tin atoms is uniform in the plane direction parallel to the surface of the support of the first layer. In the first layer of the present invention, in particular, a relatively large amount of germanium atoms and / or tin atoms are uniform in the end portion on the support side. It is desirable to provide a layer that is contained in a different distribution state, or to add a germanium atom and / or a tin atom so that the distribution is more on the support side than on the free surface side. Germanium at the edges When the distribution concentration of atoms and / or tin atoms is made extremely large, when a long-wavelength light source such as a semiconductor laser is used, almost all of the constituent layers or layer regions close to the free surface side of the light-receiving layer are exposed. Long-wavelength light that cannot be completely absorbed is substantially completely absorbed in the constituent layer or layer region of the light-receiving layer which is in contact with the support, so that interference due to light reflected from the support surface is prevented. .

As described above, in the first layer of the present invention, germanium atoms or / tin atoms can be evenly distributed in all layers, or can be continuously and unevenly distributed in the layer thickness direction. , Some typical examples of the distribution state in the layer thickness direction, taking a germanium atom as an example,
This will be described with reference to FIGS.

7 to 15, the horizontal axis represents the distribution concentration C of germanium, the vertical axis represents the layer thickness of the first layer, and t _B represents the position of the end face of the first layer on the support side, t _{B T} indicates the position of the end face on the second layer side opposite to the support side. That is, the first layer containing germanium atoms is formed toward the t _T side rather than the t _B side.

In each figure, the layer thickness and concentration are shown as they are, because the difference between the figures will not be clear, so they are shown in extreme form. It is a schematic one for explaining to do.

FIG. 7 shows a first typical example of the distribution state of germanium atoms contained in the first layer in the layer thickness direction.

In the example shown in FIG. 7, the germanium atom distribution is from the position t _B to the position t ₁ where the interface between the surface of the support on which the first layer containing germanium atoms is formed and the first layer is in contact. concentration C is notwithstanding et germanium atoms taking a constant value that is the concentration C ₁ is contained in the first layer, rather than the position t ₁ is gradually reduced continuously up to the interface position t _T than the concentration C ₂ .
At the interface position t _T , the distribution concentration C of germanium atoms is substantially zero.

(Here, substantially zero is the case where the amount is less than the detection limit amount.) In the example shown in FIG. 8, the distribution concentration C of germanium atoms contained is from the position t _B to the position t _T.
A distribution state is formed in which the concentration gradually decreases continuously from C ₃ and the concentration becomes C ₄ at the position t _T.

In the case of FIG. 9, from the position t _B to the position t ₂ , the distribution concentration C of germanium atoms is a constant position with the concentration C ₅ ,
between t ₂ and position t _T , gradually and continuously reduced,
At the position t _T , the distribution density C is substantially zero.

In the case of FIG. 10, the distribution concentration C of germanium atoms gradually decreases continuously from the position t _B to the position t _T , starting from the concentration C _{6 and} rapidly decreasing from the position t _3. And is made substantially zero at the position t _T.

In the example shown in FIG. 11, the distribution concentration of germanium atoms is a constant value C ₇ between position t _B and position t ₄ , and the distribution concentration C is zero at position t _T. It is said that Between the position t ₄ and the position t _T , the distribution concentration C is linearly reduced from the position t ₄ to the position t _T.

In the example shown in FIG. 12, the distribution density C takes a constant value of the density C ₈ from the position t _B to the position t ₅ , and the position from the position t ₅
Up to t _T, the distribution state is such that it decreases linearly from concentration C ₉ to concentration C ₁₀ .

In the example shown in FIG. 13, the distribution concentration C of germanium atoms is linearly reduced from the concentration C ₁₁ and reaches zero from the position t _B to the position t _T.

In FIG. 14, the distribution concentration C of germanium atoms from the position t _B to the position t ₆ is linearly reduced from the concentration C ₁₂ to the concentration C _13, and is between the positions t ₆ and t _T. In, an example in which the concentration C ₁₃ is set to a constant value is shown.

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is the concentration C ₁₄ at the position t _B , and is gradually reduced from this concentration C ₁₄ until reaching the position t ₇ , and t
_In the vicinity of the position ₇ , the concentration is sharply reduced to the concentration C ₁₅ at the position t ₇ .

In between position t ₇ and position t _8, is reduced initially rapidly, then the concentration at the position t ₈ is gradually decreased gradually
It becomes C ₁₆ and is gradually reduced between the positions t ₈ and t ₉ to reach the concentration C ₁₇ at the position t ₉ . Position t ₉ and position t _T
In the range between and, the concentration is decreased according to the curve of the shape as shown in the figure such that the concentration becomes substantially zero than C ₁₇ .

As described above with reference to FIGS. 7 to 15, some of the typical examples of the distribution state of germanium atoms and / or tin atoms contained in the first layer in the layer thickness direction are explained. In the receiving member, the support side has a portion having a high distribution concentration C of germanium atoms and / or tin atoms,
On the interface t _T side, the distribution concentration C has a germanium atom having a portion which is considerably lower than that on the support side or /
And a distribution of tin atoms is preferably provided in the first layer.

That is, the first layer constituting the light receiving member in the present invention preferably has a local region containing a relatively high concentration of germanium atoms and / or tin atoms on the side of the support as described above. Is desirable.

In the light receiving member of the present invention, the local area is 5 from the interface position t _B if it is explained using the symbols shown in FIGS. 7 to 15.
It is desirable to be provided within μ.

The localized region may be the entire layer region up to the thickness of 5 μm from the interface position t _B , or may be a part of the layer region.

Whether the localized region is a part or the whole of the layer region is
It is appropriately determined according to the characteristics required of the formed light receiving layer.

The localized region is a germanium atom contained in it or /
And, as the distribution state of the tin atom in the layer thickness direction, the maximum value C _max of the distribution concentration of the germanium atom or / and the tin atom is preferably 1000 atomic ppm or more relative to the silicon atom.
More preferably 5000 atomic ppm or more, most preferably 1 × 10 ⁴ at
It is desirable to form a layer so that a distribution state such as omic ppm or more can be obtained.

That is, in the light receiving member of the present invention, the first layer containing germanium atoms and / or tin atoms has a distribution concentration within 5 μm (layer region of t _B to 5 μm layer) within the layer thickness from the support side. It is preferably formed such that there is a maximum value Cmax of.

In the light receiving member of the present invention, the content of germanium atom and / or tin atom to be contained in the first layer must be appropriately determined according to the desire so that the object of the present invention can be efficiently achieved. The amount is usually 1 to 6 × 10 ⁵ atomic ppm, preferably 10 to ³ × 10 ⁵ atomic ppm, more preferably 1 × 10 ² to 2 × 10 ⁵ atomic ppm.

In the light receiving member of the present invention, the first layer may contain the substance for controlling conductivity in the whole layer region or a part of the layer region in a uniform or non-uniform distribution state.

Examples of the substance that controls the conductivity include so-called impurities in the field of semiconductors, and an atom belonging to Group III of the periodic table that gives P-type conductivity (hereinafter simply referred to as “I
Group II atom ”. ), Or an atom belonging to Group V of the periodic table (hereinafter simply referred to as “Group V atom”) that provides n-type conductivity. Specific examples of the group III atom include B (boron), Al (aluminum), Ga (gallium), In (indium), and Tl (thallium), but particularly preferable ones are B, Ga. Examples of the group V atom include P (phosphorus), As (arsenic), Sb (antimony), Bi (bisman), and the like.
Particularly preferred are P and Sb.

The first layer of the present invention is a conductivity controlling substance III
When a group atom or a group V atom is contained, whether it is contained in the whole layer region or in a part of the layer region is different depending on an intended place or an expected effect as described later, The amount to be contained also differs.

That is, when the main purpose is to control the conductivity type and / or conductivity of the first layer, it is contained in the entire layer region of the first layer, and in this case, a Group III atom or a Group V atom is included. The content of group atoms may be relatively small, usually 1 × 10 ³ to 1
× 10 ³ atomic ppm, preferably 5 × 10 ^{2 to} 5 × 10 ² a
tomic ppm, optimally 1 × 10 ^-1 to 2 × 10 ² atomic ppm.

Further, a group III atom or a group V atom is contained in a uniform distribution state in a part of the layer region in contact with the support, or the distribution concentration of the group III atom or a group V atom in the layer thickness direction is, In the case of containing a high concentration on the side in contact with the support, a constituent layer containing such a Group III atom or a Group V atom or a layer containing a Group III atom or a Group V atom in a high concentration The region serves as a charge injection blocking layer. That is, when the group III atom is contained, the movement of electrons injected from the support side into the light-receiving layer is more efficiently performed when the free surface of the light-receiving layer is subjected to a polar charging treatment. When the free surface of the photoreceptive layer is subjected to a polar electrification treatment, holes that are injected from the support side into the photoreceptive layer can be blocked. Can be prevented more efficiently. The content in such a case is relatively large, specifically, 30 to 5 × 10 ⁴ atomic ppm, preferably 50 to 1 × 10 ⁴ atomic ppm, most preferably 1 × 10 ^{2 to} 5 ×
10 ³ atomic ppm

Further, in order to efficiently exert the effect as the charge injection blocking layer, the layer thickness of the layer or layer region provided at the end portion on the support side containing the group III atom or the group V atom is set to t,
When the layer thickness of the light receiving layer is T, it is desirable that the relationship of t / T ≦ 0.4 is satisfied, and more preferably the value of the relational expression is 0.
It is desirable to set it to 35 or less, optimally 0.3 or less. The layer thickness t of the layer or the layer region is generally 3 ×
It is 10 ^{-3 to} 10 µ, preferably 4 × 10 ^{-3 to} 8 µ, and most preferably 5 × 10 ^{-3 to} 5 µ.

Next, the amount of the group III atom or the group V atom contained in the first layer is relatively large on the support side and decreases from the support side to the second layer side. In the vicinity of the interface with the layer, some typical examples of the case where the group III atom or the group V atom is distributed so as to have a relatively small amount or substantially close to zero are shown in FIGS. Although described with reference to FIG. 24, the present invention is not limited to these examples. In each figure, the horizontal axis represents the distribution concentration C of group III atoms or group V atoms, the vertical axis represents the layer thickness of the first layer, t _B represents the interface position between the support and the first layer, t _T represents the interface position between the first layer and the second layer.

FIG. 16 shows a first typical example of the state of distribution of group III atoms or group V atoms contained in the first layer in the layer thickness direction. In such an example, III group atom or interface position t _B to the position t ₁ to the first layer and the support surface are in contact containing group V atoms
Until the distribution concentration C of the group III atom or the group V atom has a constant value C ₁ , and from the position t ₁ to the interface position t _T with the second layer, the group III atom or the group V atom. Atom distribution concentration C is concentration C ₂
And the distribution concentration C of the group III atom or the group V atom becomes C ₃ at the interface position t _T.

FIG. 17 shows one of the other typical examples. In that example,
Distribution concentration C of the group III atoms or group V atoms allowed to contain the first layer, from the position t _B up to the position t _T, continuously decreases from the concentration C _4, the concentration C ₅ at position t _T Becomes

In the example shown in FIG. 18, from the position t _B to the position t ₂ , the distribution concentration C of the group III atoms or the group V atoms maintains a constant value of the concentration C ₆ , and from the position t ₂ to the position t _T. Indicates that the distribution concentration C of the group III atoms or the group V atoms gradually and continuously decreases from the concentration C _7, and the distribution concentration C of the group III atoms or the group V atoms is substantially reduced at the position t _T. It becomes zero. However, the term "substantially zero" here means that the amount is less than the detection limit amount.

In the example shown in FIG. 19, the distribution concentration C of the group III atom or the group V atom gradually decreases from the concentration C ₈ continuously from the position t _B to the position t _T, and at the position t _T. The distribution concentration C of group III atoms or group V atoms is substantially zero.

In the example shown in FIG. 20, the distribution concentration C of the group III atom or the group V atom is a constant value of the concentration C ₉ between the position t _B and the position t ₃ , and it is from the position t ₃ to the position t _T. Between the concentrations C ₉
To a concentration C ₁₀ , the value decreases linearly.

In the example shown in FIG. 21, the distribution concentration C of the group III atom or the group V atom is the constant value of the concentration C ₁₁ from the position t _B to the position t _4, and from the position t ₄ to the position t _T. Up to the concentration C _{12 up} to the concentration C ₁₃ as a linear function.

In the example shown in FIG. 22, the distribution concentration C of the group III atom or the group V atom is the concentration from the position t _B to the position t _T.
It decreases linearly from C ₁₄ to virtually zero.

In the example shown in FIG. 23, the distribution concentration C of the group III atom or the group V atom decreases linearly from the position t _B to the position t ₅ from the concentration C ₁₅ to the concentration C _16. Position t from t ₅
Until _T , the concentration C ₁₆ remains constant.

Finally, in the example shown in FIG. 24, the distribution concentration C of the group III atoms or group V atoms is the concentration C ₁₇ at position t _B, from the position t _B to the position t ₆ beginning from the concentration C ₁₇ Wayutsukuri decreases, and decreases rapidly in the vicinity of the position t _6, the concentration at position t ₆
It becomes C ₁₈ . Next, from position t ₆ to position t ₇ , there is a sharp decrease at the beginning, and then a gradual decrease gradually.
At t ₇ , the concentration is C ₁₉ . Furthermore gradually decreases extremely boiled made in between positions t ₇ and position t _8, the concentration C ₂₀ at position t _8. Furthermore, from the position t ₈ to the position t _T , the concentration C ₂₀ gradually decreases until it becomes substantially zero.

As in the example shown in FIGS. 16 to 24, a portion having a high concentration concentration C of group III atoms or group V atoms on the side closer to the support of the first layer, In the case where the distribution concentration C has a considerably low concentration portion or a concentration portion substantially close to zero on the interface side of, the group III atom or the group V atom of the group III atom or the group V atom is present in the portion close to the support side. By providing a localized region having a relatively high concentration of distribution, preferably by providing the localized region within 5 μm from the interface position in contact with the surface of the support, the distribution of group III atoms or group V atoms The above-described effect that the layer region having a high concentration forms the charge injection blocking layer is more efficiently exhibited.

As described above, regarding the distribution state of the group III atom or the group V atom,
Although the respective action effects have been described above individually, in order to obtain a light-receiving member having characteristics capable of achieving the desired purpose, the distribution state of these Group III atoms or Group V atoms and the inclusion in the first layer are included. The amount of the group III atom or the group V atom to be used is appropriately used in combination as necessary,
Needless to say. For example, in the case where a charge injection blocking layer is provided at the end of the first layer on the side of the support, in the first layer other than the charge injection blocking layer, the conductivity controlling substance contained in the charge injection blocking layer is contained. A substance that controls the conductivity of a polarity different from the polarity may be contained, or the substance that controls the conductivity of the same polarity may be contained in a much smaller amount than that contained in the charge injection blocking layer. You may ask.

Furthermore, in the light receiving member of the present invention, as the constituent layer provided at the end portion on the support side, instead of the charge injection blocking layer,
A so-called barrier layer made of an electrically insulating material may be provided, or both the barrier layer and the charge injection blocking layer may be constituent layers. Examples of the material forming the barrier layer include inorganic electrically insulating materials such as Al ₂ O ₃ , SiO ₂ , and Si ₃ N _4, and organic electrically insulating materials such as polycarbonate.

Second Layer The second layer 103 of the light receiving member of the present invention is the above-mentioned first layer 1
A layer which is provided on 02 and has a free surface 104, that is, a surface layer, which contains at least one selected from oxygen atoms, carbon atoms and nitrogen atoms in a uniform distribution state [hereinafter, referred to as “a −Si (O, C, N)) (H,
X) ”. ] Is composed.

The purpose of providing the second layer 103 in the light receiving member of the present invention is to improve moisture resistance, continuous repeated use characteristics, electrical pressure resistance, use environment characteristics, durability, etc. This is achieved by incorporating at least one selected from oxygen atoms, carbon atoms and nitrogen atoms in the amorphous material forming the second layer.

Further, in the light receiving member of the present invention, since each of the amorphous materials forming the first layer 102 and the second layer 103 has a common constituent atom of silicon atom, the first layer 102 Chemical stability can be ensured at the interface between the second layer 103 and the second layer 103.

In the second layer 103, at least one selected from oxygen atoms, carbon atoms and nitrogen atoms is contained in a uniform distribution state, but as the amount of these atoms contained increases. The above-mentioned various characteristics are improved. However, too much leads to poor layer quality and poor electrical and mechanical properties. Therefore, the content of these atoms is
Usually 0.001 to 90 atomic%, preferably 1 to 90 atomic%,
The optimum value is 10-80 atomic%.

It is desirable that the second layer also contains at least one of a hydrogen atom and a halogen atom. The amount of hydrogen atom (H) or the amount of halogen atom (X) contained in the second layer, or hydrogen. The sum of the amount of atoms and halogen atoms (H + X) is usually 1 to 40 atomic%, preferably 5 to 30.
atomic%, optimally 5 to 25 atomic%.

The second layer 103 needs to be carefully formed to obtain the desired properties. That is, a silicon atom and at least one selected from an oxygen atom, a carbon atom and a nitrogen atom, or further, a substance having a hydrogen atom and / or a halogen atom as constituent atoms, the content of each constituent atom and other preparation Depending on the conditions, the morphology changes from a crystalline state to an amorphous state, the electrical properties range from conductive to semi-conductive and insulating, and the photoelectric property ranges from photoconductive to non-photoconductive. In order to show each of the above, to form the second layer 103 having desired characteristics according to the purpose,
It is important to select the content of each constituent atom and the preparation conditions.

For example, when the second layer 103 is provided mainly for the purpose of improving electrical withstand voltage, the amorphous material forming the second layer 103 has a remarkable electrical insulating behavior under use conditions. Form. Further, when the second layer 103 is provided mainly for the purpose of improving continuous repeated use characteristics and use environment characteristics, the amorphous material forming the second layer 103 has a degree of electrical insulation described above. Although it is relaxed to some extent, it is formed so as to have some sensitivity to irradiation light.

Further, in the present invention, the layer thickness of the second layer is also one of the important factors for efficiently achieving the object of the present invention, and is appropriately determined according to the intended purpose. , The amount of oxygen atoms, carbon atoms, nitrogen atoms, halogen atoms, hydrogen atoms to be contained in the layer, or the characteristics required for the second layer, it is necessary to determine the mutual and organic relationships. is there. In addition, it is necessary to consider the economical aspect in consideration of productivity and mass productivity. For this reason, the thickness of the second layer is usually 3 × 10 ^{−3 to} 30 μ, more preferably 4 × 10 ^{−3 to} 20 μ, and particularly preferably 5 × 10 ⁻³ to 10 μ.
Let μ.

Since the light-receiving member of the present invention has the above-mentioned layer structure, it can solve all of the problems of the light-receiving member having the light-receiving layer composed of amorphous silicon as described above. Even when a monochromatic laser beam is used as a light source, the appearance of an interference fringe pattern in a formed image due to an interference phenomenon can be significantly prevented, and an extremely high-quality visible image can be formed.

Further, the light-receiving member of the present invention has a high photosensitivity in the entire visible light region, and is particularly excellent in the photosensitivity characteristic on the long wavelength side, so that it is particularly excellent in matching with a semiconductor laser, and has an optical response. It exhibits high electrical properties, excellent electrical, optical and photoconductive properties, electrical withstand voltage and use environment characteristics.

In particular, when it is applied as a photoreceptive member for electrophotography, it has no influence of residual potential on image formation, its electrical characteristics are stable, high sensitivity, and high SN ratio. Therefore, it is possible to stably and repeatedly obtain a high-quality image having excellent light fatigue resistance, repeated use characteristics, high density, clear halftone, and high resolution.

Next, the method for forming the light receiving layer of the present invention will be described.

Any of the amorphous materials forming the light receiving layer of the present invention is formed by a vacuum deposition method utilizing a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion plating method. These manufacturing methods are appropriately selected and adopted depending on factors such as the manufacturing conditions, the load level of capital investment, the manufacturing scale, and the desired characteristics of the light receiving member to be manufactured. Since it is relatively easy to control the conditions for producing the light receiving member having, and the carbon atom and the hydrogen atom can be easily introduced together with the silicon atom, the glow discharge method or the sputtering method is used. It is suitable. Then, the glow discharge method and the sputtering method may be used together in the same apparatus system.

In order to form the first layer composed of a-SiGe (H, X) by the glow discharge method, a source gas for supplying Si that can supply silicon atoms (Si) and a germanium atom (Ge). Source gas for supplying Ge and hydrogen atom (H) or /
And a hydrogen atom (H) capable of supplying the halogen atom (X) or / and a source gas for supplying the halogen atom (X) are introduced into the deposition chamber capable of reducing the pressure in a desired gas pressure state, A glow discharge is generated on the surface of a-SiGe (H, X) on the surface of a predetermined support that is installed in a predetermined position in advance.
To form a layer.

The substance that can be the source gas for supplying Si is Si.
_{H 4, Si 2 H 6,} Si 3 H 8, Si 4 gas state of H _10, etc. or gasified may hydrogenated silicon (silanes). In particular, the layer created when working easy handling, Si supply In terms of efficiency, Si
H ₄ and Si ₂ H ₆ are preferred.

Further, as the substance that can be the raw material gas for supplying Ge, GeH ₄ , Ge ₂ H ₆ , Ge ₃ H ₈ , Ge ₄ H ₁₀ , Ge ₅ H ₁₂ , Ge ₆ H ₁₄ , Ge
₇ H ₁₆ , Ge ₈ H ₁₈ , Ge ₉ H _{20 in} the gaseous state or gasifiable germanium hydride can be used. In particular, from the viewpoint of ease of handling during layer creation work and good Ge supply efficiency, Ge
H ₄ , Ge ₂ H ₆ , and Ge ₃ H ₈ are preferred.

Further, there are many halogen compounds as the substances that can be the raw material gas for supplying the halogen atoms, and for example, halogen gas, halides, interhalogen compounds, silane derivatives substituted with halogen, or the like in a gas state or gasifiable. A halogen compound can be used. Specifically, fluorine, chlorine, bromine, iodine, halogen gas, Br
Interhalogen compounds such as F, ClF, CLF ₃ , BrF ₅ , BrF ₃ , IF ₃ , IF ₇ , ICl and IBr, and halogenated silicon compounds such as SiF ₄ , Si ₂ F ₆ , SiCl ₄ , SiBr ₄ are preferred. It is mentioned as a thing.

In the case where a silicon compound containing a halogen atom as described above in a gas state or a gasifiable substance is formed by a glow discharge method as a raw material gas, without using a silicon hydride gas as a raw material gas for supplying Si atoms. It is particularly effective because a layer composed of a-Si containing a halogen atom can be formed on a predetermined support.

When the first layer is formed using the glow discharge method, basically, the halogenated silicon and Ge which are the source gases for supplying Si are
Introducing germanium hydride as a raw material for supply and a gas such as Ar, H ₂ or He into the deposition chamber at a predetermined mixing ratio and a gas flow rate, causing a glow discharge to generate a gas of these gases. The first layer is formed on the support by forming a plasma atmosphere, but the content of hydrogen atoms (H) is extremely effective in controlling the electrical or photoelectric properties. For easier control, these gases may be mixed with a raw material gas for supplying hydrogen atoms. As the gas for supplying hydrogen atoms, hydrogen gas or silicon hydride gas such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ and Si ₄ H ₁₀ is used. Further, as a gas for supplying hydrogen atoms, halides such as HF, HCl, HBr, HI, SiH ₂ F ₂ , SiH ₂
In the case of using a halogen-substituted silicon hydride such as I ₂ , SiH ₂ Cl ₂ , SiHCl ₃ , SiH ₂ Br ₂ , SiHBr ₃ or the like in a gas state or gasifiable, introduction of a halogen atom (X) At the same time, a hydrogen atom (H) is also introduced, which is effective.

In order to form the first layer composed of a-SiGe (H, X) by the sputtering method, two pieces of a target made of silicon and a target made of germanium, or made of silicon and germanium are used. This is done by using targets and spattering them in a desired gas atmosphere.

When the first layer is formed by using the ion plating method, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are housed in a vapor deposition boat as evaporation sources, and Can be carried out by heating and evaporating by means of a resistance heating method or an electron beam method (EB method) or the like, and letting the flying evaporate pass through in a desired gas plasma atmosphere.

In both cases of the sputtering method and the ion plating method, in order to allow the halogen atom to be contained in the layer to be formed, a gas of the above-mentioned halide or a silicon compound containing the halogen atom is introduced into the deposition chamber, and the gas is introduced. The plasma atmosphere may be formed. When hydrogen atoms are introduced, a raw material gas for supplying hydrogen atoms, for example, H ₂ or the above-mentioned hydrogenated silanes or / and gases such as germanium hydride are introduced into the deposition chamber for spattering. It suffices to form a plasma atmosphere of gases such as. Yet source gas for supplying halogen atoms, said although halide or silicon compounds containing halogens are mentioned as valid, Other, HF, HCl, HBr, hydrogen halides or HI, SiH ₂ F ₂ , SiH ₂ I ₂ , SiH ₂ Cl ₂ , SiHCl ₃ , S
iH ₂ Br ₂ , halogen-substituted silicon hydrides such as SiHBr ₃ , and Ge
HF ₃ , GeH ₂ F ₂ , GeH ₃ F, GeHCl ₃ , GeH ₂ Cl ₂ , GeH ₃ Cl, GeHBr
₃ , GeH ₂ Br ₂ , GeH ₃ Br, GeHI ₃ , GeH ₂ I ₂ , GeH ₃ I, etc.Hydrogen halide germanium, etc., GeF ₄ , GeCl ₄ , GeBr ₄ , Ge
Gaseous or gasifiable substances such as germanium halides such as I ₄ , GeF ₂ , GeCl ₂ , GeBr ₂ , GeI _2, etc. can also be used as effective starting materials.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) or the sum of the amounts of hydrogen atoms and halogen atoms contained in the first layer constituting the light receiving layer to be formed. (H + X) is preferably 0.01 to 40 atomic%, more preferably 0.05 to 30 atomic%, most preferably 0.1 to 25 atomic
It is desirable to set it as%.

Amorphous silicon containing tin atoms (hereinafter referred to as "a-SiSn (H, X)") by using a glow discharge method, a sputtering method, or an ion plating method.
In order to form a light receiving layer composed of
When forming a layer composed of (H, X), the starting material for supplying germanium atoms is used in place of the starting material for supplying tin atoms (Sn), and the amount thereof in the layer to be formed is changed. It is carried out by containing it while controlling it.

Examples of the substance that can be the source gas for supplying the tin atom (Sn) include tin hydride (SnH ₄ ), SnF ₂ , SnF ₄ , SnCl ₂ , and SnC.
l _4, SnBr _2, SnBr _4, SnI _2, those can be used which can be SnI or gasified gas state such as tin halide, such as _4,
The use of tin halide is particularly effective because a layer composed of a-Si containing halogen atoms can be formed on a predetermined support. Among them, Sn is easy to handle during layer formation work and Sn supply efficiency is good.
Cl ₄ is preferred.

When SnCl ₄ is used as a starting material for supplying tin atoms (Sn), solid SnCl ₄ can be used for gasification.
It is desirable to boil an inert gas such as Ar, He, etc. while heating, and bubbling using the inert gas.The gas thus produced is placed in a deposition chamber whose inside is depressurized in a desired gas pressure state. Introduce.

Amorphous silicon containing at least one selected from oxygen atom, carbon atom, and nitrogen atom, that is, a-Si (O, C, N), by using glow discharge method, spattering method, or ion plating method. To form the second layer 103 composed of (H, X), a starting material for forming a-Si (O, C, N) (H, X) is used to form the above-mentioned atom (O , C, N) containing a-SiGe (H, X) or / and a-SiSn (H, X).

For example, in order to form the second layer containing oxygen atoms by the glow discharge method, a source gas containing silicon atoms (Si) as constituent atoms and a source gas containing oxygen atoms (O) as constituent atoms are required. Or a raw material gas containing hydrogen atoms (H) and / or halogen atoms (X) as constituent atoms at a desired mixing ratio, or a raw material gas containing silicon atoms (Si) as constituent atoms. And a source gas containing oxygen raw material (O) and hydrogen atoms (H) as constituent atoms, which are also mixed at a desired mixing ratio, or a source gas containing silicon atoms (Si) as constituent atoms. It is possible to use a mixture of raw material gases having three constituent atoms of silicon, silicon atoms (Si), oxygen atoms (O) and hydrogen atoms (H).

Alternatively, a raw material gas containing silicon raw material (Si) and hydrogen atoms (H) as constituent atoms may be mixed with a raw material gas containing oxygen raw material (O) as constituent atoms.

As the starting material for introducing such oxygen atoms, any material may be used as long as it is a gas in which oxygen atoms are constituent atoms or a gasifiable substance is gasified.

Specific examples of the starting material for introducing oxygen atoms include oxygen (O ₂ ), ozone (O ₃ ), nitric oxide (NO), nitrogen dioxide (NO ₂ ), nitrogen monoxide (N ₂ O), Nitrogen dioxide (N ₂
O ₃ ), nitrogen tetraoxide (N ₂ O ₄ ), nitrogen pentaoxide (N ₂ O ₅ ),
Nitrogen trioxide (NO ₃ ), silicon atom (Si), oxygen atom (O) and hydrogen atom (H) as constituent atoms, for example,
Disiloxane (H ₃ SiOSiH _3), trisiloxane (H ₃ SiOSi
And lower siloxanes such as H ₂ OSiH ₃ ) and the like.

According to the sputtering method, in order to form a layer containing oxygen atoms, a single crystal or polycrystalline Si wafer or SiO ₂ wafer, or a wafer containing Si and SiO ₂ as a mixture is used as a target. Etc. may be sputtered in various gas atmospheres.

For example, if a Si wafer is used as a target, the raw material gas for introducing oxygen atoms and, if necessary, hydrogen atoms and / or halogen atoms is diluted with a diluting gas, if necessary, to form a deposition chamber for sputtering. The Si wafer may be sputtered by introducing gas into them and forming gas plasma of these gases.

Alternatively, Si and SiO ₂ are used as separate targets, or by using one target that is a mixture of Si and SiO ₂ , in an atmosphere of diluting gas as a gas for sputtering or at least hydrogen. It is formed by sputtering in a gas atmosphere containing atoms (H) and / or halogen atoms (X) as constituent atoms. As the raw material gas for introducing oxygen atoms, the raw material gas for introducing oxygen atoms in the raw material gas shown in the example of the glow discharge described above,
It can also be used as an effective gas for spattering.

Further, for example, to form a second layer composed of amorphous silicon containing carbon atoms by a glow discharge method, a source gas containing silicon atoms (Si) as constituent atoms,
A raw material gas containing carbon atoms (C) as a constituent raw material and a raw material gas containing hydrogen atoms (H) and / or halogen atoms (X) as constituent atoms are mixed at a desired mixing ratio and used. Alternatively, a raw material gas containing silicon atoms (Si) as constituent atoms and a raw material gas containing carbon atoms (C) and hydrogen atoms (H) as constituent atoms are also mixed at a desired mixing ratio. Alternatively, a source gas containing silicon atoms (Si) as constituent atoms is mixed with a source gas containing silicon atoms (Si), carbon atoms (C) and hydrogen atoms (H) as constituent atoms, or further, silicon atoms ( A raw material gas containing Si) and hydrogen atoms (H) as constituent atoms and a raw material gas containing carbon atoms (C) as constituent atoms are mixed and used.

Effectively used as such a source gas is hydrogen such as silane (Silane) having Si and H as constituent atoms such as SiH ₄ , Si ₂ H ₆ , Si ₃ H ₈ and Si ₄ H _10. Silicon gas, C and H as constituent atoms, for example, saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, acetylene hydrocarbons having 2 to 3 carbon atoms, and the like. .

Specifically, saturated hydrocarbons include methane (CH ₄ ),
Ethane (C ₂ H ₆ ), propane (C ₃ H ₈ ), n-butane (n-
C ₄ H ₁₀ ), pentane (C ₅ H ₁₂ ), ethylene hydrocarbons include ethylene (C ₂ H ₄ ), propylene (C ₃ H ₆ ), butene-1 (C ₄ H ₈ ), butene-2. (C ₄ H _8), isobutylene (C ₄
H ₈ ), pentene (C ₅ H ₁₀ ), acetylene-based hydrocarbons include acetylene (C ₂ H ₂ ), methylacetylene (C
₃ H ₄ ), butyne (C ₄ H ₆ ) and the like.

As a source gas containing Si, C and H as constituent atoms, Si (C
Mention may be made of alkyl silicides such as H ₃ ) ₄ and Si (C ₂ H ₅ ) ₄ . In addition to these raw material gases, H ₂ can of course be used as the raw material gas for introducing H.

In order to form the second layer composed of a-SiC (H, X) by the sputtering method, a monocrystalline or polycrystalline Si wafer or C (graphite) wafer, or Si and C are mixed. The wafer contained as a target is used as a target, and these are sputtered in a desired gas atmosphere.

For example, when using a Si wafer as a target, the raw material gas for introducing carbon atoms and / or hydrogen atoms and / or halogen atoms is diluted with a diluent gas such as Ar or He, if necessary, for sputtering. The Si wafer may be sputtered by introducing the gas plasma of these gases into the deposition chamber.

Also, Si and C should be different targets or Si
When used as a single target containing a mixture of C and C, a raw material gas for introducing hydrogen atoms and / or halogen atoms as a gas for sputtering is diluted with a diluting gas as needed, and deposited for spattering. Introduced in the room,
Gas plasma may be formed and sputtered. As the raw material gas for introducing each atom used in the sputtering method, the raw material gas used in the glow discharge method can be used as it is.

Further, for example, to form a second layer composed of amorphous silicon containing nitrogen atoms by a glow discharge method, a source gas containing silicon atoms (Si) as constituent atoms,
A raw material gas containing a nitrogen raw material gas (N) as a constituent atom and, if necessary, a raw material gas containing a hydrogen atom (H) and / or a halogen atom (X) as constituent atoms are mixed and used at a desired mixing ratio. Or, a raw material gas containing silicon atoms (Si) as constituent atoms and a raw material gas containing nitrogen atoms (N) and hydrogen atoms (H) as constituent atoms are mixed at a desired mixing ratio. Can be used.

Alternatively, a raw material gas containing silicon atoms (Si) and hydrogen atoms (H) as constituent atoms may be mixed with a raw material gas containing nitrogen atoms (N) as constituent atoms.

As a starting material for introducing such a nitrogen atom, any material may be used as long as it is a gasified substance containing at least nitrogen atoms as constituent atoms or a gasifiable substance.

Specific examples of the starting material for introducing a nitrogen atom include nitrogen (N ₂ ), ammonia (NH ₃ ), hydrazine (H ₂ ) having a nitrogen atom as a constituent atom or a nitrogen atom and a hydrogen atom as constituent atoms. ₂ NNH ₂ ), hydrogen azide (HN ₃ ), ammonium azide (NH ₄ N ₃ ) and the like nitrogen, and nitrogen compounds such as nitrides and azides. In addition to these, halogenated nitrogen compounds such as nitrogen trifluoride (F ₃ N) and nitrogen tetrafluoride (F ₄ N ₂ ) can be cited. When these halogenated nitrogen compounds are used, the nitrogen atom (N In addition to the introduction of (), a halogen atom (X) can be introduced.

To form a layer region containing nitrogen atoms by the sputtering method, a single crystal or polycrystalline Si wafer or Si is used.
_{A 3} N ₄ wafer or a wafer containing Si and Si ₃ N ₄ mixed therein may be used as a target, and these may be sputtered in various gas atmospheres.

For example, if a Si wafer is used as a target, the raw material gas for introducing the nitrogen atom and, if necessary, the hydrogen atom and / or the halogen atom is diluted with a diluting gas as needed, and the sputtering chamber for sputtering is used. The Si wafer may be sputtered by introducing gas into them and forming gas plasma of these gases.

Separately, Si and Si ₃ N ₄ are used as separate targets.
Alternatively, by using a single target in which Si and Si ₃ N ₄ are mixed, at least hydrogen atom (H) or / and halogen atom (X) are contained in an atmosphere of a diluting gas as a gas for sputtering. It is formed by sputtering in a gas atmosphere containing the constituent atoms. As the raw material gas for introducing nitrogen atoms, the raw material gas for introducing nitrogen atoms among the raw material gases shown in the example of glow discharge described above can be used as an effective gas even in the case of sputtering.

As described above, the light-receiving layer of the light-receiving member of the present invention is formed by using the glow discharge method, the sputtering method, or the like.
And tin atom, Group III atom or Group V atom, oxygen atom,
The control of the content of each of carbon atoms or nitrogen atoms, or hydrogen atoms and / or halogen atoms is performed by controlling the gas flow rate of each atom supply starting material or the gas between each atom supply starting material flowing into the deposition chamber. This is done by controlling the flow rate ratio.

The conditions such as the temperature of the support during formation of the first layer and the second layer, the gas pressure in the deposition chamber, and the discharge power are important factors for obtaining a light receiving member having desired characteristics. It is appropriately selected in consideration of the function of the layer to be formed. Furthermore, these layer forming conditions may differ depending on the type and amount of each of the above-mentioned atoms to be contained in the first layer and the second layer. It is also necessary to make a decision after careful consideration.

Specifically, when forming the second layer made of a-Si (H, X) containing nitrogen atoms, oxygen atoms, carbon atoms, etc., the support temperature is usually 50 to 350 ° C. However, the temperature is particularly preferably 50 to 250 ° C. Gas pressure in the deposition chamber is typically 0.0
It is 1 to 1 Torr, and particularly preferably 0.1 to 0.5 Torr. The discharge power is usually 0.005 to 50 W / cm ² , more preferably 0.01 to 30 W / cm ² , and particularly preferably 0.01 to 20 W / cm ² .

When forming the first layer of a-SiGe (H, X), or a-Si containing a group III atom or a group V atom
In the case of forming the first layer composed of Ge (H, X), the support temperature is usually 50 to 350 ° C, more preferably 50 to 300 ° C, and particularly preferably 100 to 300 ° C. .
The gas pressure in the deposition chamber is usually 0.01 to 5 Torr, preferably 0.001 to 3 Torr, particularly preferably 0.
Set 1 to 1 Torr. The discharge power is usually 0.005 to 50 W / cm ² , but preferably 0.01 to 30 W / cm ^2, and particularly preferably 0.01 to 20 W / cm ² .

However, the specific conditions of the temperature of the support, the discharge power, and the gas pressure in the deposition chamber for forming layers are usually difficult to determine individually.
Therefore, in order to form an amorphous material layer with desired characteristics,
It is desirable to determine the optimum conditions for layer formation based on mutual and organic relationships.

By the way, the distribution of the germanium atom or / and the tin atom, the group III atom or the group V atom, or the hydrogen atom or / and the halogen atom to be contained in the first layer of the present invention is made uniform, or In order to form the first layer, it is necessary to keep the above conditions constant when forming the first layer or the second layer.

Further, in the present invention, at the time of forming the first layer, a germanium atom or / and a tin atom contained in the layer,
Alternatively, when a glow discharge method is used to form a layer having a desired distribution state in the layer thickness direction by changing the distribution concentration of the group III atom or the group V atom in the layer thickness direction, a germanium atom is used. Or / and by appropriately changing the gas flow rate when introducing a tin atom or a starting material for introducing a group III atom or a group V atom into the gas deposition chamber according to a desired rate of change, and keeping other conditions constant. Form while keeping. Then, in order to change the gas flow rate, concretely, for example, manually or by some commonly used method such as an external drive motor, the opening of a predetermined needle valve provided in the middle of the gas flow path system is gradually increased. It suffices to perform an operation to change. At this time, the rate of change of the flow rate does not need to be linear,
For example, by using a microcomputer or the like, the flow rate can be controlled according to a previously designed change rate curve to obtain a desired content rate curve.

When the photoreceptive layer is formed by the sputtering method, the distribution concentration in the layer thickness direction of the germanium atom, the tin atom, the group III atom, or the group V atom is changed in the layer thickness direction to obtain the desired layer thickness direction. In order to form the distribution state of, as in the case of using the glow discharge method, a starting material for introducing a germanium atom or a tin atom or a group III atom or a group V atom is used in a gas state, and the gas is The gas flow rate when introduced into the deposition chamber is changed according to the desired rate of change.

〔Example〕

Hereinafter, the present invention will be described in more detail with reference to Examples 1 to 8, but the present invention is not limited thereto.

In each of the examples, the light receiving layer was formed using the glow discharge method. FIG. 25 shows an apparatus for manufacturing the light receiving member of the present invention by the glow discharge method.

The gas cylinders 2502, 2503, 2504, 2505, and 2506 in the figure are sealed with the raw material gas for forming each layer of the present invention. As an example, 2502 is SiF ₄ gas (purity 99.999%) cylinder, 2503 diluted with H ₂ B ₂ H ₆
Gas (purity 99.999%, hereinafter abbreviated as B ₂ H ₆ / H ₂ ) cylinder, 2
504 is a CH ₄ gas (purity 99.999%) cylinder, 2505 is a GeF ₄ gas (purity 99.999%) cylinder, and 2506 is an inert gas (He) cylinder. 2506 ′ is a closed container containing SnCl ₄ .

A gas cylinder is required to allow these gases to flow into the reaction chamber 2501.
Make sure that valves 2522 to 2526 and leak valves 2535 of 2502 to 2506 are closed, and inflow valves 2512 to 2516,
After confirming that the outflow valves 2517 to 2521 and the auxiliary valves 2532 and 2533 are opened, the main valve 2534 is first opened to exhaust the reaction chamber 2501 and the gas pipe. Next, an example of forming the first layer and the second layer on the vacuum Al cylinder 2537 will be described below.

First, SiF ₄ gas from the gas cylinder 2502, B ₂ H ₆ / H ₂ gas from the gas cylinder 2503, and GeF ₄ gas from the gas cylinder 2505 are opened by opening valves 2522, 2523, 2525 and outlet pressure gauges 2527, 25.
Adjust the pressure of 28, 2530 to 1 Kg / cm ^2, and adjust the inflow valves 2512, 251.
Gradually open 3, 2515, and mass flow controller 2507, 2
Flow into 508 and 2510. Continued outflow valve 251
7, 2518, 2520 and auxiliary valve 2532 are gradually opened to allow the gas to flow into the reaction chamber 2501. SiF ₄ gas flow rate at this time,
Adjust the outflow valves 2517, 2518, 2520 so that the ratio of the GeF ₄ gas flow rate and the B ₂ H ₆ / H ₂ gas flow rate becomes a desired value, and
The opening of the main valve 2534 is adjusted while observing the reading of the vacuum gauge 2536 so that the pressure in 2501 becomes a desired value. Then, the temperature of the base cylinder 2537 is set to 50 by the heater 2538.
After confirming that the temperature is set in the range of ~ 400 ° C, the power supply 2540 is set to a desired electric power to cause glow discharge in the reaction chamber 2501 and a micro computer (not shown) is used. Then, according to the predesigned flow rate change rate line, SiF ₄ gas, GeF ₄ gas and B ₂ H ₆ / H ₂
A first layer containing silicon atoms, germanium atoms and boron atoms is first formed on the base cylinder 2537 while controlling the gas flow rate of the gas.

By the same operation as described above, in order to form the second layer on the first layer, for example, each of SiF ₄ gas and CH ₄ gas is diluted with He, Ar, H ₂ or the like, if necessary. And then flow into the reaction chamber 2501 at a desired gas flow rate to cause glow discharge according to desired conditions.

Needless to say, all of the outflow valves other than the gas outflow valves necessary for forming each layer are closed, and when forming each layer, the gas used for forming the previous layer is the same as the reaction chamber.
In order to avoid remaining in the gas pipe inside the 2501 and the outflow valves 2517-2521 to the reaction chamber 2501, the outflow valve
2517 to 2521 are closed, auxiliary valves 2532 and 2533 are opened, the main valve 2534 is fully opened, and the system is temporarily evacuated to a high vacuum, if necessary.

Further, in the case where tin atoms are contained in the first layer, when a gas starting from SnCl ₄ is used as a raw material gas, the solid SnCl ₄ contained in 2506 ′ is heated by a heating means (see FIG. While heating using (not shown), an inert gas such as Ar or He is blown into the SnCl ₄ from an inert gas cylinder 2506 such as Ar or He for bubbling. The generated SnCl ₄ gas is caused to flow into the reaction chamber by the same procedure as that for the SiF ₄ gas, GeF ₄ gas, B ₂ H ₆ / H ₂ gas and the like.

Test Example Using a rigid sphere made of SUS stainless steel having a diameter of 2 mm, the surface of an aluminum alloy cylinder (diameter 60 mm, length 298 mm) was treated using the apparatus shown in FIG. 6 to form irregularities.

Formation of a perfect sphere R ', fall height h and radius of curvature R of the dent,
When the relationship with the width D was investigated, it was confirmed that the radius of curvature R and the width D of the trace depression were determined by conditions such as the diameter R ′ of the true sphere and the drop height h. In addition, it was confirmed that the pitch of the trace pits (density of trace pits and pitch of irregularities) can be adjusted to the desired pitch by controlling the rotation speed of the cylinder, the number of revolutions, or the drop amount of the rigid spherical body. Was done.

Example 1 The surface of an aluminum alloy cylinder was treated in the same manner as in Test Example 1, and D shown in the upper column of Table 1A below and Cylindrical Al support with cylinders (cylinder No. 101-10
6) got.

Next, a light-receiving layer was formed on the Al support (cylinder Nos. 101 to 106) under the conditions shown in Table 1B below by the apparatus for manufacturing the light-receiving member shown in FIG.

These light receiving members were subjected to image exposure by irradiating laser light having a wavelength of 780 mm and a spot diameter of 80 μm using the image exposure apparatus shown in FIG. 26, and developed and transferred to obtain an image. The appearance of the interference fringe pattern in the obtained image was observed and evaluated. The results are shown in the lower column of Table 1A.

Note that FIG. 26 (A) is a schematic plan view schematically showing the entire exposure apparatus, and FIG. 26 (B) is a schematic side view schematically showing the entire exposure apparatus. In the figure, 2601 is a light receiving member, 2602
Is a semiconductor laser, 2603 is an fθ lens, and 2604 is a polygon mirror.

Example 2 A light-receiving layer was formed on an Al support (cylinder Nos. 101 to 106) in the same manner as in Example 1 except that the light-receiving layer was formed according to the conditions for forming the light-receiving layer shown in Table 2B. Formed.

The changes in the flow rates of the GeF ₄ gas and the SiF ₄ gas during the formation of the first layer were automatically adjusted by the micro computer control according to the flow rate change lines shown in FIGS. 27 and 28, respectively.

An image was formed on the obtained light-receiving member in the same manner as in Example 1, and the occurrence state of the interference fringe pattern in the obtained image was observed and evaluated. The results are shown in the lower column of Table 2A.

Example 3 An Al support (Sample No. 1) was prepared in the same manner as in Example 1 except that the light receiving layer was formed according to the layer forming conditions shown in Table 3.
03-106), and a light-receiving layer was formed thereon. At this time, the gas flow rates of H ₂ gas and PH ₃ / H ₂ gas at the time of forming the first layer were automatically adjusted by the micro computer control according to the flow rate change lines shown in FIGS. 29 and 30, respectively. .

Images were formed on these light receiving members in the same manner as in Example 1, and the same favorable results as in Example 1 were obtained.

Example 4 An Al support (Sample No. 1) was prepared in the same manner as in Example 1 except that the light receiving layer was formed according to the layer forming conditions shown in Table 4.
03-106), and a light-receiving layer was formed thereon. At this time, GeF ₄ gas, S
iF ₄ gas, the gas flow rate of H ₂ gas and B ₂ H _6/2 gas each 31
According to the flow rate change curves shown in FIG. 32, FIG. 33 and FIG. 34, the flow rate was automatically adjusted by the micro computer control.

Images were formed on these light receiving members in the same manner as in Example 1, and the same favorable results as in Example 1 were obtained.

Example 5 An Al support (Sample No. 1) was prepared in the same manner as in Example 1 except that the light receiving layer was formed according to the layer forming conditions shown in Table 5.
03-106), and a light-receiving layer was formed thereon. At this time, the gas flow rates of GeH ₄ gas, SiH ₄ gas, and B ₂ H ₆ / H ₂ gas at the time of forming the first layer were measured according to the flow rate change curves shown in FIGS. 35, 36, and 37, respectively. , It was automatically adjusted by the micro computer control.

Images were formed on these light receiving members in the same manner as in Example 1, and the same favorable results as in Example 1 were obtained.

Example 6 An Al support (Sample No. 1) was prepared in the same manner as in Example 1 except that the light receiving layer was formed according to the layer forming conditions shown in Table 6.
03-106), and a light-receiving layer was formed thereon. At this time, the gas flow rates of SiH ₄ gas, GeF ₄ gas, and B ₂ H ₆ / H ₂ gas at the time of forming the first layer were measured according to the flow rate change curves shown in FIGS. 38, 39, and 40, respectively. , It was automatically adjusted by the micro computer control.

Images were formed on these light receiving members in the same manner as in Example 1, and the same favorable results as in Example 1 were obtained.

Example 7 An Al support (Sample No. 1) was prepared in the same manner as in Example 1 except that the light-receiving layer was formed according to the layer forming conditions shown in Table 7.
03-106), and a light-receiving layer was formed thereon. At this time, the gas flow rate of the B ₂ H ₆ / H ₂ gas during the formation of the first layer was automatically adjusted by micro computer control according to the flow rate change curve shown in FIG.

Images were formed on these light receiving members in the same manner as in Example 1, and the same favorable results as in Example 1 were obtained.

Example 8 An Al support (Sample No. 1) was prepared in the same manner as in Example 1 except that the light receiving layer was formed according to the layer forming conditions shown in Table 6.
03-106), and a light-receiving layer was formed thereon. At this time, the gas flow rates of SiH ₄ gas, GeH ₄ gas (or SnCl ₄ / He gas) and B ₂ H ₆ / H ₂ gas during the formation of the first layer are shown in FIGS. 41, 42 and 43, respectively. According to the flow rate change curve shown in, it was automatically adjusted by the micro computer control.

Images were formed on these light receiving members in the same manner as in Example 1, and the same favorable results as in Example 1 were obtained.

[Outline of Effects of the Invention] The light-receiving member of the present invention has the above-mentioned layer structure, whereby all the problems of the light-receiving member having the light-receiving layer composed of amorphous silicon can be solved. In particular, even when a laser light which is a coherent monochromatic light is used as a light source, it is possible to remarkably prevent the appearance of an interference fringe pattern in a formed image due to an interference phenomenon and form a very high quality visible image. it can.

Further, the light-receiving member of the present invention has a high photosensitivity in the entire visible light region, and is particularly excellent in the photosensitivity characteristic on the long wavelength side, so that it is particularly excellent in matching with a semiconductor laser, and has an optical response. It exhibits high electrical properties, excellent electrical, optical and photoconductive properties, electrical withstand voltage and use environment characteristics.

In particular, when it is applied as a photoreceptive member for electrophotography, it has no influence of residual potential on image formation, its electrical characteristics are stable, high sensitivity, and high SN ratio. Therefore, it is possible to stably and repeatedly obtain a high-quality image having excellent light fatigue resistance, repeated use characteristics, high density, clear halftone, and high resolution.

[Brief description of drawings]

FIG. 1 is a diagram schematically showing an example of the light receiving member of the present invention, and FIGS. 2 and 3 are for explaining the principle of preventing the generation of interference fringes in the light receiving member of the present invention. FIG. 2 is a partially enlarged view, FIG. 2 is a view showing that interference fringes can be prevented from being generated in a light receiving member in which irregularities due to spherical trace depressions are formed on the surface of a support, and FIG. 3 is a conventional surface. FIG. 6 is a diagram showing that interference fringes are generated in a light receiving member in which a light receiving layer is deposited on a support which is regularly roughened. FIGS. 4 and 5 are schematic diagrams for explaining the uneven shape of the surface of the support of the light receiving member of the present invention and a method for producing the uneven shape. FIG. 6 is a diagram schematically showing one structural example of an apparatus suitable for forming the uneven shape provided on the support of the light receiving member of the present invention, and FIG. 6 (A) is a front view. , Sixth
(B) is a vertical sectional view. 7 to 15 are diagrams showing the distribution state of germanium atoms or tin atoms in the layer thickness direction in the light receiving layer of the present invention, and FIGS. 16 to 24 are oxygen atoms and carbon in the light receiving layer of the present invention. Atoms and nitrogen atoms,
Alternatively, it is a diagram showing a state of distribution of group III atoms or group V atoms in the layer thickness direction, in each figure, the vertical axis represents the layer thickness of the light-receiving layer, the horizontal axis represents the distribution concentration of each atom. There is.
FIG. 25 is an example of an apparatus for producing the light receiving layer of the light receiving member of the present invention, and is a schematic explanatory view of a production apparatus by a glow discharge method. FIG. 26 is a diagram for explaining an image exposure device using laser light. FIGS. 27 to 43 are diagrams showing changes in the gas flow rate ratio in forming the light receiving layer of the present invention, in which the vertical axis represents the layer thickness of the light receiving layer and the horizontal axis represents the gas flow rate of the used gas. 1 to 3, 100 ... Light receiving member, 101 ... Support, 102 ... Light receiving layer, 102 ', 201, 301 ... First layer, 102 ", 202, 302 ... Second layer, 103,203,303 …… Free surface, 204,304 …… The interface between the first layer and the second layer About the fourth and fifth figures, 401,501 …… Support, 402,502 …… Support surface, 403,503,
503 '... Rigid body sphere, 404,504 ... Spherical depression About Fig. 60, 601 ... Cylinder, 602 ... Rotation axis, 603 ... Driving means, 604 ... Drop device, 605 ... Rigid body sphere, 606 ... … Ball feeder, 607 …… Vibrator, 608, Collection tank, 609…
… Ball feed device, 610 …… Cleaning device, 611 …… Cleaning liquid reservoir, 612 …… Cleaning liquid collection tank, 613 …… Drop port 2501 …… Reaction chamber, 2502 to 2506 …… Gas cylinder, 2506 ′…
… SnCl ₄ tank, 2507 to 2511 …… Mass flow controller, 251
2 to 2516 …… Inflow valve, 2517 to 2521 …… Outflow valve, 2
522 to 2526 …… Valve, 2527 to 2531 …… Pressure regulator, 253
2,2533 ... Auxiliary valve, 2534 ... Main valve, 2535 ...
… Leak valve, 2536 …… Vacuum gauge, 2537 …… Base body cylinder, 2538 …… Heating heater, 2539 …… Motor, 2540
…… High-frequency power source Regarding Fig. 261, 2601 …… Photoreceptive member, 2602 …… Semiconductor laser, 2603…
… Fθ lens, 2604 …… Polygon mirror

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Jun Koike 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) References JP 59-58436 (JP, A) JP 60 -31144 (JP, A) JP 60-68345 (JP, A) JP 60-35740 (JP, A) JP 58-187934 (JP, A) U.S. Patent 4432220 (US, A) U.S. Patent 3269060 (US, A)

Claims (11)

[Claims] 1. A first layer made of an amorphous material containing silicon atoms and at least one of germanium atoms and tin atoms on a support, silicon atoms, oxygen atoms and carbon. And a second layer composed of an amorphous material containing at least one selected from the group consisting of atoms and nitrogen atoms, wherein the width D of the recess is 500 μm on the surface of the support. A light-receiving member characterized in that the recess has concavities and convexities formed by a plurality of spherical trace recesses having a radius of curvature R and a width D of 0.035 ≦ D / R. 2. The second layer is composed of an amorphous material containing silicon atoms and at least one selected from oxygen atoms, carbon atoms and nitrogen atoms in a uniform distribution state. The light-receiving member described in the first item of the range. 3. The light-receiving member according to claim 1, wherein the first layer contains an atom belonging to Group III or Group V of the periodic table. 4. The light receiving member according to claim 1, wherein the first layer has a multilayer structure. 5. The method according to claim 4, wherein the first layer has, as one of the constituent layers, a charge injection blocking layer containing an atom belonging to Group III or Group V of the periodic table. Light receiving member. 6. The light receiving member according to claim 4, wherein the first layer has a barrier layer as one of the constituent layers. 7. The concavo-convex pattern of the spherical trace dents is a concave-convex pattern of spherical trace dents having the same radius of curvature.
Item 7. The light receiving member according to item. 8. The light receiving member according to claim 1, wherein the irregularities of the spherical trace depressions are irregularities of depressions having the same radius of curvature and width. 9. The scope of claim 1, wherein the spherical trace depressions are unevenness due to the trace depressions of the rigid true spheres, which are obtained by naturally dropping a plurality of rigid true spheres on the surface of the support. Light receiving member. 10. The spherical trace depression is an unevenness due to the trace depression of the rigid spherical body obtained by dropping a rigid spherical body having substantially the same diameter from substantially the same height. The light receiving member described. 11. The light receiving member according to claim 1, wherein the support is a metal body.