JPH0690504B2 - Photomask manufacturing method - Google Patents
Photomask manufacturing methodInfo
- Publication number
- JPH0690504B2 JPH0690504B2 JP13413885A JP13413885A JPH0690504B2 JP H0690504 B2 JPH0690504 B2 JP H0690504B2 JP 13413885 A JP13413885 A JP 13413885A JP 13413885 A JP13413885 A JP 13413885A JP H0690504 B2 JPH0690504 B2 JP H0690504B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- manufacturing
- reticle
- pattern
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、縮小投影露光装置の原画であるホトマスク
（レティクル）に係り、特に微細パターンを転写するの
に好適なホトマスクの製造方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask (reticle) which is an original image of a reduction projection exposure apparatus, and more particularly to a method of manufacturing a photomask suitable for transferring a fine pattern.
〔発明の背景〕 原画パターンの描かれたマスク（以下、レティクルと称
す）を照明系で照明しレティクル上のパターンをウェー
ハ上に転写する縮小投影露光装置には、転写できるパタ
ーンの微細化が要求されている。縮小投影露光装置がど
の程度微細なパターンまで転写できるかを表わす解像度
は、周期的に明暗の変化するレティクルパターンを用い
て、ウェーハ上で隣接する２ケ所の明部が分離できるか
どうかで評価される。この解像度を向上させる一手法と
して、レティクル上の隣接する２ケ所の透過部分の照明
光の位相を変えればよいことが知られている。従来、照
明光の位相を変化させるレティクルパターンについて
は、アイ・イー・イー・イー トランザクション オン
エレクトロン デバイシズ,ED−29巻，第12号（1982
年）第1828頁（IEEE Trans on Electron Devices, vol
ED−29 No.12 （1982年）p1828）におけるマーク ディ
ー レヴンソン（Marc D. Levenson）等による“インプ
ルーヴイング レゾルーション イン ホトリソグラフ
ィ ウィズ ア フエイズ−シフトマスク（Improving
Resolution in Photolithography with a Phase−Shift
ing Mask）”と題する文献において論じられている。本
文献で提案しているレティクルは、レティクル基板上に
パターンの原画となる遮光部を設け、更にその上に照明
光の位相を変化させる層（以下、位相シフト層と称す）
を設けている。そのためレティクル製作に当っては、ま
ず遮光パターン形成のための露光が必要であり、エッチ
ング等による遮光パターン形成後、次に位相シフト層の
パターンを遮光パターンに正しく合せて露光する工程が
必要である。このためレティクル製作に必要な工程が複
雑であること、および位相シフト層のパターン露光時に
位置合せ誤差が生じた場合は照明光の位相を変える機能
が劣化すること等の難点がある。また、特開昭58−1737
44号公報にはレティクル基板上に位相シフト層のパター
ンを形成し、次に遮光パターンを前記位相シフト層のパ
ターンに位置合わせして形成することが示唆されてい
る。しかし、シフタの存在する部分とシフタの存在しな
い部分との間にシフタ膜厚分の段差が生じるので露光性
能低下の原因となっている。[Background of the Invention] A reduction projection exposure apparatus that illuminates a mask (hereinafter referred to as a reticle) on which an original pattern is drawn by an illumination system and transfers the pattern on the reticle onto a wafer requires miniaturization of a transferable pattern. Has been done. The resolution, which represents how fine a pattern can be transferred by a reduction projection exposure apparatus, is evaluated by whether or not two adjacent bright areas on a wafer can be separated by using a reticle pattern whose brightness changes periodically. It As one method for improving the resolution, it is known that the phase of the illumination light at two adjacent transmitting portions on the reticle may be changed. Conventionally, regarding a reticle pattern that changes the phase of the illumination light, IEE Transaction on Electron Devices, ED-29, No. 12 (1982
Year) Page 1828 (IEEE Trans on Electron Devices, vol
ED-29 No.12 (1982) p1828) by Marc D. Levenson et al. “Improving resolution in photolithography with phase shift mask (Improving
Resolution in Photolithography with a Phase−Shift
The reticle proposed in this document has a light-shielding portion serving as an original image of a pattern on a reticle substrate, and a layer for changing the phase of illumination light ( Hereinafter referred to as a phase shift layer)
Is provided. Therefore, when manufacturing a reticle, it is necessary to first expose to form a light-shielding pattern, and then to form a light-shielding pattern by etching or the like, and then to align the pattern of the phase shift layer with the light-shielding pattern and perform exposure. . For this reason, there are problems in that the process required for manufacturing the reticle is complicated, and if a positioning error occurs during pattern exposure of the phase shift layer, the function of changing the phase of the illumination light deteriorates. In addition, JP-A-58-1737
Japanese Patent Laid-Open No. 44-44 suggests that a pattern of a phase shift layer is formed on a reticle substrate, and then a light shielding pattern is formed in alignment with the pattern of the phase shift layer. However, there is a step difference corresponding to the film thickness of the shifter between the portion where the shifter is present and the portion where the shifter is not present, which is a cause of deterioration of the exposure performance.
本発明の目的は、上記難点を解消し簡単な工程で遮光パ
ターンと照明光の位相を変える層のパターンの両方を同
時に精度良く形成することができるようにしたホトマス
ク（レティクル）の製造方法を提供することにある。An object of the present invention is to provide a method for manufacturing a photomask (reticle), which eliminates the above-mentioned difficulties and enables simultaneous formation of both a light-shielding pattern and a pattern of a layer for changing the phase of illumination light with high precision in a simple process. To do.
上記目的を達成するために、本発明では透明基体である
ガラス基板上にまず位相シフト層を設け、その上に遮光
膜を設けるようにした。レティクル製造に当っては、遮
光膜上にレジストを塗布した後、部分的に露光エネルギ
ーの異なる露光を行って、開口部の位相シフト層を除去
する部分とそのまま残しておく部分とで異なる厚さのレ
ジストパターンを形成するようにした。そして、遮光膜
と位相シフト層のエッチング、レジストのドライエッチ
ング、遮光膜のエッチングの順にエッチングを行うこと
により、所望のレティクルを得ることができるように透
明基体であるガラス基板上に位相シフト層と遮光部を順
に形成したホトマスク原板を提供するものである。In order to achieve the above object, in the present invention, a phase shift layer is first provided on a glass substrate which is a transparent substrate, and a light shielding film is provided thereon. In manufacturing a reticle, after coating a resist on the light-shielding film, the exposure energy with which the exposure energy is partially different is applied, and the thickness of the portion where the phase shift layer of the opening is removed and the portion where it is left as it is are different. The resist pattern is formed. Then, by performing etching in order of the light-shielding film and the phase shift layer, the dry etching of the resist, and the light-shielding film, a phase shift layer is formed on the glass substrate which is a transparent substrate so that a desired reticle can be obtained. The present invention provides a photomask original plate in which light-shielding portions are sequentially formed.
以下、本発明を実施例を用いて説明する。第１図は、本
発明を適用したレティクルの断面を示す図である。ここ
では、Crから成る遮光膜３に５ケ所の開口部４−1,4−
2,4−3,4−4,4−５からなる５本の線パターンが形成さ
れている例をとりあげ、線パターンの長手方向に対して
垂直方向の断面を示している。図示したレティクルは、
ガラス基板１と遮光膜３との間に、蒸着したSiO2からな
る位相シフト層２をはさむことを特徴としている。位相
シフト層２の厚さｔは、その屈折率をｎ、照明光の波長
をλとするとき で与えられ、本実施例では0.38μｍとしてある（ｎ＝1.
47,λ＝0.365μｍ）。第１図に示すように、５ケ所の開
口部のうち、１ケ所おきの開口部４−2,4−４は位相シ
フト層２が除去されている。このため、このレティクル
を上面からコヒーレンス度の高い照明光で照明すると、
レティクル透過光の振幅分布は第２図に示すように隣接
する開口部で符号が反転し、その結果従来の照明光の位
相を変えるレティクルと全く同等の効果が現われる。Hereinafter, the present invention will be described using examples. FIG. 1 is a view showing a cross section of a reticle to which the present invention is applied. Here, the light-shielding film 3 made of Cr has five openings 4-1 and 4-
Taking an example in which five line patterns of 2,4-3,4-4,4-5 are formed, a cross section in a direction perpendicular to the longitudinal direction of the line pattern is shown. The reticle shown is
Between the glass substrate 1 and the light shielding film 3, it is characterized in that sandwich the phase shift layer 2 made of SiO 2 was deposited. When the thickness t of the phase shift layer 2 is n and the wavelength of the illumination light is λ, And is 0.38 μm in this embodiment (n = 1.
47, λ = 0.365 μm). As shown in FIG. 1, the phase shift layer 2 is removed from the openings 4-2 and 4-4 at every other one of the five openings. Therefore, when this reticle is illuminated from above by illumination light with a high degree of coherence,
The sign of the amplitude distribution of the reticle transmitted light is inverted at the adjacent openings as shown in FIG. 2, and as a result, the same effect as that of the conventional reticle for changing the phase of the illumination light appears.
次に本発明のレティクルの製造手順を第３図を用いて説
明する。まず、（Ａ）に示すようにガラス基板１上にSi
O2２を3800Å蒸着し、その上に遮光膜３であるCrを800
Å蒸着する。更にその上にレジスト６を塗布する。次
に、開口部のパターンを露光する。このとき、パターン
ごとに露光強度を変えてあるので、現像処理後のレジス
トパターンは、（Ｂ）に示すように、パターン部４−2,
4−４は完全に除去されているが、パターン部４−1,4−
3,4−５はレジスト膜厚が約1/2に減少しているだけであ
る。Next, a procedure for manufacturing the reticle of the present invention will be described with reference to FIG. First, as shown in FIG.
O 2 2 is vapor-deposited at 3800Å and Cr, which is the light-shielding film 3, is deposited on it by 800
Å Evaporate. Further, a resist 6 is applied on it. Next, the pattern of the opening is exposed. At this time, since the exposure intensity is changed for each pattern, the resist pattern after the development processing is, as shown in FIG.
4-4 is completely removed, but the pattern parts 4-1 and 4-
In 3,4-5, the resist film thickness is only reduced to about 1/2.
パターンごとに露光時間を変える方法としては、EB描画
の場合の走査時間を変化させることにより可能である。
ここでCrをエッチングし、さらに稀釈したフッ酸でSiO2
層２をエッチングすると、（Ｃ）に示すように開口部４
−2,4−４が形成される。次に（Ｄ）に示すように残っ
ているレジストを垂直方向にドライエッチングして膜厚
を減少させていき、パターン部４−1,4−3,4−５のレジ
ストを除去する。再びCrをエッチングすると、（Ｅ）に
示すように遮光膜３に５ケ所の開口部が形成される。最
後に表面に残っているレジストをすべて除去することに
より、第１図に示す本発明のレティクルが完成する。As a method of changing the exposure time for each pattern, it is possible to change the scanning time in the case of EB drawing.
Here, Cr is etched and SiO 2 is further diluted with diluted hydrofluoric acid.
When the layer 2 is etched, openings 4 are formed as shown in (C).
-2,4-4 are formed. Next, as shown in (D), the remaining resist is dry-etched in the vertical direction to reduce the film thickness, and the resist of the pattern portions 4-1, 4-3, 4-5 is removed. When Cr is etched again, five openings are formed in the light-shielding film 3 as shown in (E). Finally, by removing all the resist remaining on the surface, the reticle of the present invention shown in FIG. 1 is completed.
本実施では、位相シフト層としてSiO2の蒸着膜を用いた
が、この材料は数１の条件を満たし、かつレティクル洗
浄等に耐えるものであればよい。In the present embodiment, the vapor-deposited film of SiO 2 was used as the phase shift layer, but this material may be any material as long as it satisfies the condition of Equation 1 and can withstand reticle cleaning and the like.
本発明のホトマスクの製造方法を用いれば、照明光の位
相をかえる層を有するレティクルの製造に当り、遮光膜
上に形成すべきパターンと位相シフト層に形成すべきパ
ターンを簡単な工程で精度良く形成することができる。
さらに、シフタ層のパターン形成後に段差上に遮光膜を
形成する場合に比べ、遮光膜に段差が生じにくく露光性
能を向上する効果を有する。このため、レティクル製造
工程の簡素化、パターンの信頼性向上の効果が得られ
る。By using the method for manufacturing a photomask of the present invention, in manufacturing a reticle having a layer that changes the phase of illumination light, a pattern to be formed on a light-shielding film and a pattern to be formed on a phase shift layer can be accurately formed by a simple process. Can be formed.
Further, compared to the case where the light-shielding film is formed on the step after forming the pattern of the shifter layer, the light-shielding film is less likely to have the step, and the exposure performance is improved. Therefore, the effects of simplifying the reticle manufacturing process and improving the reliability of the pattern can be obtained.
第１図は本発明のレティクルの断面を示す図、第２図は
本発明のレティクル透過後の照明光の振幅分布を示す
図、第３図は本発明のレティクルの製造プロセスを示す
図である。 １…レティクル基板、２…照明光の位相を変化させる
層、３…遮光膜、４−１〜４−５…遮光膜部に形成され
た開口部、５…レティクル透過後の振幅分布、６…レジ
スト。FIG. 1 is a diagram showing a cross section of a reticle of the present invention, FIG. 2 is a diagram showing an amplitude distribution of illumination light after passing through the reticle of the present invention, and FIG. 3 is a diagram showing a manufacturing process of the reticle of the present invention. . DESCRIPTION OF SYMBOLS 1 ... Reticle substrate, 2 ... Layer that changes the phase of illumination light, 3 ... Light-shielding film, 4-1 to 4-5 ... Openings formed in light-shielding film portion, 5 ... Amplitude distribution after transmission of reticle, 6 ... Resist.
Claims (4)
遮光膜にレジストを塗布した後、所定のパターンを露光
する工程と、 レジストに開口部を形成する工程と、 該レジスト開口部より露出した遮光膜をエッチングする
工程と、 エッチングされた遮光膜をマスクとして透明基体表面の
一部をエッチングする工程を含むことを特徴とするホト
マスクの製造方法。1. A step of forming a light-shielding film on a transparent substrate, a step of applying a resist to the light-shielding film, and then exposing a predetermined pattern, a step of forming an opening in the resist, and the resist opening. A method of manufacturing a photomask, comprising: a step of etching the more exposed light-shielding film; and a step of etching a part of the transparent substrate surface using the etched light-shielding film as a mask.
製造方法において、上記エッチングする工程として、上
記透明基体のエッチング深さは、入射光に対し出射光の
位相をほぼ反転する深さにすることを特徴とするホトマ
スクの製造方法。2. The method of manufacturing a photomask according to claim 1, wherein in the etching step, the etching depth of the transparent substrate is such that the phase of outgoing light is substantially inverted with respect to incident light. A method of manufacturing a photomask, comprising:
れか記載のホトマスクの製造方法において、ガラス基板
上に予め位相シフト膜を形成して透明基体を形成する工
程を有することを特徴とするホトマスクの製造方法。3. The method for manufacturing a photomask according to claim 1, further comprising a step of forming a phase shift film on a glass substrate in advance to form a transparent substrate. And a method for manufacturing a photomask.
いずれか記載のホトマスクの製造方法において、上記レ
ジスト露光する工程として、部分的に異なる露光エネル
ギーで上記レジストを露光することを特徴とするホトマ
スクの製造方法。4. The method of manufacturing a photomask according to claim 1, 2, or 3, wherein the step of exposing the resist comprises exposing the resist with partially different exposure energies. A method for manufacturing a characteristic photomask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13413885A JPH0690504B2 (en) | 1985-06-21 | 1985-06-21 | Photomask manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13413885A JPH0690504B2 (en) | 1985-06-21 | 1985-06-21 | Photomask manufacturing method |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4160614A Division JPH0715578B2 (en) | 1992-06-19 | 1992-06-19 | Master plate for photomask |
| JP10156050A Division JPH1152542A (en) | 1998-06-04 | 1998-06-04 | Photomask manufacturing method |
| JP15605198A Division JP2989803B2 (en) | 1998-06-04 | 1998-06-04 | Photomask manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61292643A JPS61292643A (en) | 1986-12-23 |
| JPH0690504B2 true JPH0690504B2 (en) | 1994-11-14 |
Family
ID=15121357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13413885A Expired - Lifetime JPH0690504B2 (en) | 1985-06-21 | 1985-06-21 | Photomask manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0690504B2 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2810061B2 (en) * | 1988-09-14 | 1998-10-15 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
| JP2710967B2 (en) | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | Manufacturing method of integrated circuit device |
| US5234780A (en) * | 1989-02-13 | 1993-08-10 | Kabushiki Kaisha Toshiba | Exposure mask, method of manufacturing the same, and exposure method using the same |
| EP0395425B1 (en) * | 1989-04-28 | 1996-10-16 | Fujitsu Limited | Mask, mask producing method and pattern forming method using mask |
| JP2519815B2 (en) * | 1990-03-01 | 1996-07-31 | 三菱電機株式会社 | Photomask and manufacturing method thereof |
| US5298365A (en) * | 1990-03-20 | 1994-03-29 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| KR920009369B1 (en) * | 1990-05-25 | 1992-10-15 | 삼성전자 주식회사 | How to make a mask |
| DE69130389T2 (en) * | 1990-12-05 | 1999-04-29 | At & T Corp., New York, N.Y. | Lithographic processes |
| US5244759A (en) * | 1991-02-27 | 1993-09-14 | At&T Bell Laboratories | Single-alignment-level lithographic technique for achieving self-aligned features |
| JP2765765B2 (en) * | 1991-03-14 | 1998-06-18 | 東京応化工業株式会社 | Method for manufacturing phase shifter material |
| US5414746A (en) * | 1991-04-22 | 1995-05-09 | Nippon Telegraph & Telephone | X-ray exposure mask and fabrication method thereof |
| US5246800A (en) * | 1991-09-12 | 1993-09-21 | Etec Systems, Inc. | Discrete phase shift mask writing |
| JP2814848B2 (en) * | 1992-07-22 | 1998-10-27 | 日本電気株式会社 | Phase shift mask and method of manufacturing the same |
| US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| AU5681194A (en) * | 1993-01-21 | 1994-08-15 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| JP3234084B2 (en) * | 1993-03-03 | 2001-12-04 | 株式会社東芝 | Fine pattern forming method |
-
1985
- 1985-06-21 JP JP13413885A patent/JPH0690504B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61292643A (en) | 1986-12-23 |
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