JPH068086A - Vacuum suction device - Google Patents
Vacuum suction deviceInfo
- Publication number
- JPH068086A JPH068086A JP31507891A JP31507891A JPH068086A JP H068086 A JPH068086 A JP H068086A JP 31507891 A JP31507891 A JP 31507891A JP 31507891 A JP31507891 A JP 31507891A JP H068086 A JPH068086 A JP H068086A
- Authority
- JP
- Japan
- Prior art keywords
- suction
- support member
- pore diameter
- adsorption
- average pore
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Landscapes
- Jigs For Machine Tools (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
(57)【要約】
【構成】吸着部材10を多孔質セラミックスにより形成
した真空吸着装置において、支持部材20の上面22も
多孔質セラミックスで形成し、この多孔質セラミックス
として、平均気孔径を10μm以下にするか、または吸
着部材10に対する平均気孔径の比を0.2以下とす
る。
【効果】吸着面11と支持部材20の上面22研磨特性
がほぼ等しくなるため、真空吸着装置の上面を研磨した
時に極めて平坦度を高くできる。また、支持部材20の
上面22の平均気孔径を上記範囲内としておけば、真空
吸引時に空気漏れが生じにくく、実用上問題のない吸着
力を得られる。
(57) [Summary] [Construction] In a vacuum adsorption device in which the adsorption member 10 is made of porous ceramics, the upper surface 22 of the support member 20 is also made of porous ceramics, and the average pore diameter of the porous ceramics is 10 μm or less. Or the ratio of the average pore diameter to the adsorption member 10 is 0.2 or less. [Effect] Since the polishing characteristics of the suction surface 11 and the upper surface 22 of the support member 20 are substantially equal to each other, the flatness can be extremely increased when the upper surface of the vacuum suction device is polished. Further, if the average pore diameter of the upper surface 22 of the support member 20 is set within the above range, air leakage is unlikely to occur during vacuum suction, and a suction force with no practical problem can be obtained.
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体ウェハやガラス
基板などを吸着保持して、搬送、加工を行うための真空
吸着装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum suction device for sucking and holding a semiconductor wafer, a glass substrate or the like for carrying and processing.
【0002】[0002]
【従来の技術】従来より、例えば半導体装置の製造工程
において、半導体ウェハを搬送、加工、検査する場合に
は、真空圧を利用した真空吸着装置が用いられていた。2. Description of the Related Art Conventionally, for example, in the manufacturing process of a semiconductor device, when a semiconductor wafer is transferred, processed, and inspected, a vacuum suction device using a vacuum pressure has been used.
【0003】このような真空吸着装置としては、吸着面
に開口した複数の貫通孔を有するものがあったが、貫通
孔部分のみで吸着作用をするため、吸着が不均一とな
り、半導体ウェハの加工精度が低下するなどの問題点が
あった。そこで、より均一な吸着を行うために、吸着面
を多孔質体で形成した真空吸着装置があった。As such a vacuum suction device, there is a vacuum suction device having a plurality of through holes opened on the suction surface. However, since the suction function is exerted only by the through holes, the suction becomes non-uniform, and the semiconductor wafer is processed. There was a problem such as a decrease in accuracy. Therefore, there is a vacuum suction device in which the suction surface is formed of a porous body in order to perform more uniform suction.
【0004】例えば、図4に示す真空吸着装置は、多孔
質体からなる吸着部材10を支持部材20に、樹脂また
はガラスなどの接着剤30により接合してなるものであ
った。そして、下方の吸引孔21より真空吸引すること
によって、上記吸着部材10上の吸着面11に半導体ウ
ェハ(不図示)を吸着するようになっていた。またこの
真空吸着装置において、耐磨耗性を高め、優れた平坦度
を維持するために、吸着部材10を気孔径30〜150
μm程度の多孔質セラミックスにより形成し、支持部材
20を緻密質セラミックスにより形成することが行われ
ていた (特開昭59−124536号、62−5377
4号、63−169243号公報など参照)。For example, in the vacuum suction device shown in FIG. 4, the suction member 10 made of a porous material is joined to the support member 20 with an adhesive 30 such as resin or glass. Then, the semiconductor wafer (not shown) is sucked onto the suction surface 11 on the suction member 10 by vacuum suction from the lower suction hole 21. In addition, in this vacuum suction device, in order to improve wear resistance and maintain excellent flatness, the suction member 10 has a pore diameter of 30 to 150.
It has been performed that the support member 20 is formed of a porous ceramic having a size of about μm and the support member 20 is formed of a dense ceramic (Japanese Patent Laid-Open No. 59-124536, 62-5377).
No. 4, 63-169243, etc.).
【0005】[0005]
【発明が解決しようとする課題】この真空吸着装置を用
いる場合は、吸着面11の平坦度を高くする必要がある
ため、支持部材20に吸着部材10を接合した後、双方
の上面をダイヤモンド砥石などで研磨することが行われ
ていた。しかし、上記のように、吸着部材10は多孔質
セラミックスからなっていたため比較的研磨されやすい
が、支持部材20は緻密質セラミックスまたは金属から
なっていたため研磨されにくかった。そのため、研磨後
の拡大断面図を図5に示すように、吸着面11側が大き
く研磨されてしまい、支持部材20の上面22との間に
段差が生じやすく、真空吸着装置の上面全体を実用上問
題のないレベル(平坦度1μm以下)とすることが困難
であった。このような状態で使用すると、吸着時にリー
クが生じて吸着力が小さくなったり、あるいは半導体ウ
ェハの加工に用いる場合は、加工精度が悪くなるなどの
問題点があった。When this vacuum suction device is used, the flatness of the suction surface 11 must be increased. Therefore, after the suction member 10 is joined to the support member 20, the upper surfaces of both of them are diamond grindstones. And so on. However, as described above, since the adsorption member 10 is made of porous ceramics, it is relatively easy to be polished, but the support member 20 is made of dense ceramics or metal, which makes it difficult to be polished. Therefore, as shown in the enlarged cross-sectional view after polishing as shown in FIG. 5, the suction surface 11 side is largely polished, and a step is likely to be formed between the suction member 11 and the upper surface 22 of the supporting member 20, and the entire upper surface of the vacuum suction device is practically used. It was difficult to achieve a level without problems (flatness 1 μm or less). When used in such a state, there is a problem that leakage occurs at the time of suction to reduce the suction force, or when used for processing a semiconductor wafer, processing accuracy deteriorates.
【0006】そこで、上面全体の平坦度を1μm以下と
するためには、複数の砥石を用いて研磨するなどの作業
が必要であり、手間のかかるものであった。Therefore, in order to set the flatness of the entire upper surface to 1 μm or less, it is necessary to perform work such as polishing with a plurality of grindstones, which is troublesome.
【0007】また、平坦度が優れた状態に研磨しても、
使用中に上記と同様の理由で吸着面11のみが磨耗しや
すいため、比較的短期間の使用で、吸着面11と支持部
材20の上面22との間に段差が生じやすく、再度研磨
を行わねばならないという問題点があった。Further, even if the flatness is polished,
Since only the suction surface 11 is easily worn during use for the same reason as described above, a step is likely to occur between the suction surface 11 and the upper surface 22 of the support member 20 in a relatively short period of use, and polishing is performed again. There was a problem that we had to do it.
【0008】[0008]
【課題を解決するための手段】そこで、本発明は、吸着
部材だけでなく、支持部材の上面も多孔質セラミックス
で形成して真空吸着装置を形成したものである。また、
このとき支持部材上面を形成する多孔質セラミックスと
して、吸着部材に対する平均気孔径の比が0.2以下の
もの、または平均気孔径が10μm以下のものを用いれ
ばよい。Therefore, according to the present invention, not only the suction member but also the upper surface of the support member is formed of porous ceramics to form a vacuum suction device. Also,
At this time, as the porous ceramics forming the upper surface of the support member, one having an average pore diameter ratio to the adsorption member of 0.2 or less, or an average pore diameter of 10 μm or less may be used.
【0009】[0009]
【作用】本発明によれば、吸着部材と支持部材の上面が
いずれも多孔質セラミックスからなるため、両部材の研
磨特性がほぼ等しいことから、真空吸着装置の上面を研
磨した時に両部材の境界部に段差が生じにくく、優れた
平坦度とできる。また、使用時の磨耗量もほぼ等しいこ
とから、長期使用しても上記段差が生じにくい。According to the present invention, since the upper surfaces of both the suction member and the support member are made of porous ceramics, the polishing characteristics of both members are substantially equal. A step is unlikely to occur in the portion, and excellent flatness can be achieved. In addition, since the amount of wear during use is almost the same, the above-mentioned step is unlikely to occur even after long-term use.
【0010】なお、支持部材の上面を多孔質セラミック
スとしても、上記のように平均気孔径を小さくしておけ
ば空気漏れが生じにくく、実用上問題ない吸着力を得る
ことができる。Even if the upper surface of the support member is made of porous ceramics, air leakage is less likely to occur and a suction force with no practical problem can be obtained by reducing the average pore diameter as described above.
【0011】[0011]
【実施例】以下、本発明の実施例を説明する。なお、従
来例と同一部分は同一符号を用いた。EXAMPLES Examples of the present invention will be described below. The same parts as those in the conventional example are designated by the same reference numerals.
【0012】図1に示す真空吸着装置は、多孔質セラミ
ックスからなる吸着部材10を、支持部材20にガラ
ス、樹脂などの接着剤30で接合したものである。そし
て、上記支持部材20は、緻密質セラミックスからなる
支持部20aと、上記吸着部材10よりも気孔径の小さ
い多孔質セラミックスからなる隔壁部20bとを接合し
て構成されており、上面22は多孔質セラミックスから
なっている。この真空吸着装置において、支持部材20
の吸引孔21より真空吸引すると、気孔径の大きい吸着
部材10の吸着面11に半導体ウェハなどの被吸着物W
を吸着できる。The vacuum suction device shown in FIG. 1 comprises a suction member 10 made of porous ceramics, which is joined to a support member 20 with an adhesive 30 such as glass or resin. The support member 20 is formed by joining a support portion 20a made of dense ceramics and a partition wall portion 20b made of porous ceramics having a pore diameter smaller than that of the adsorption member 10, and the upper surface 22 is porous. Made of quality ceramics. In this vacuum suction device, the support member 20
When vacuum suction is performed through the suction holes 21 of the suction holes 21, the suction target 11 such as a semiconductor wafer is attracted to the suction surface 11 of the suction member 10 having a large pore diameter.
Can be adsorbed.
【0013】また、上記吸着面11の平坦度を高めるた
めに研磨した場合、支持部材20の上面22が、吸着面
11と同じ材質の多孔質セラミックスからなっているた
め、両者の研磨特性がほぼ等しいことから、研磨後の拡
大断面を図2に示すように、吸着面11と支持部材20
の上面22の間に段差はなく、簡単な研磨で全体として
の平坦度を1μm以下とできる。When the suction surface 11 is polished to increase its flatness, the upper surface 22 of the support member 20 is made of porous ceramics made of the same material as that of the suction surface 11, so that both polishing characteristics are almost the same. Therefore, as shown in FIG. 2, an enlarged cross section after polishing shows that the suction surface 11 and the support member 20 are equal.
There is no step between the upper surfaces 22 of the above, and the flatness as a whole can be made 1 μm or less by simple polishing.
【0014】次に本発明の他の実施例を説明する。Next, another embodiment of the present invention will be described.
【0015】図3に示す真空吸着装置は、マルチタイプ
と呼ばれるもので、中央の吸着部材10のまわりに支持
部材20を介して第二の環状をした吸着部材12を備え
ており、各吸着部材10、12に対する独立した吸引孔
21、23を形成してある。そして、上記実施例と同様
に、吸着部材10、12は気孔径の大きい多孔質セラミ
ックスからなり、支持部材20は、緻密質セラミックス
からなる支持部20aと、上記吸着部材10、12より
も気孔径の小さい多孔質セラミックスからなる隔壁部2
0bとを接合して構成されている。The vacuum suction device shown in FIG. 3 is called a multi-type, and is provided with a second annular suction member 12 around a central suction member 10 with a support member 20 interposed therebetween. Independent suction holes 21 and 23 for 10 and 12 are formed. Then, as in the above-mentioned embodiment, the adsorbing members 10 and 12 are made of porous ceramics having a large pore diameter, and the supporting member 20 is a supporting portion 20a made of dense ceramics and a pore diameter larger than those of the adsorbing members 10 and 12. Partition part 2 made of porous ceramics with small size
It is configured by joining with 0b.
【0016】この真空吸着装置を用いれば、吸引孔21
のみから真空吸引すると中央の吸着部材10のみで吸着
するため、比較的小さい半導体ウェハの吸着を行うこと
ができる。また、吸引孔21、23の両方から吸引する
と、両方の吸着部材10、12で吸着するため、比較的
大きい半導体ウェハの吸着を行うことができる。したが
って、吸引孔21、23を切り換えるだけで、さまざま
な大きさの半導体ウェハを吸着することができる。If this vacuum suction device is used, the suction hole 21
If vacuum suction is performed from only the suction member 10, only the central suction member 10 is sucked, so that a relatively small semiconductor wafer can be sucked. Further, when suction is performed from both the suction holes 21 and 23, both suction members 10 and 12 suction, so that a relatively large semiconductor wafer can be suctioned. Therefore, semiconductor wafers of various sizes can be sucked by simply switching the suction holes 21 and 23.
【0017】この実施例の場合も、真空吸着装置の上面
を研磨する時に、支持部材20の上面22が多孔質セラ
ミックスからなっているため、各吸着面11、13と支
持部材20の上面22の間に段差が生じることはなく、
簡単な研磨で全体の平坦度を1μm以下とすることがで
きる。Also in this embodiment, when the upper surface of the vacuum suction device is polished, the upper surface 22 of the support member 20 is made of porous ceramics, so that the respective suction surfaces 11, 13 and the upper surface 22 of the support member 20 are polished. There is no step between them,
The overall flatness can be reduced to 1 μm or less by simple polishing.
【0018】以上の実施例によれば、半導体ウェハなど
を吸着する真空吸着装置上面の平坦度を極めて優れたも
のとできることから、吸着力を高くできるだけでなく、
吸着固定した半導体ウェハを加工する際に、加工精度を
高くすることができる。また、使用時の磨耗特性につい
ても、吸着面11、13と支持部材20の上面22がほ
ぼ等しいことから、長期使用しても両部材の境界に段差
が生じにくく、優れた平坦度を維持できる。According to the above embodiment, since the flatness of the upper surface of the vacuum suction device for sucking a semiconductor wafer can be made extremely excellent, not only the suction power can be increased, but also
When processing a semiconductor wafer that has been suction-fixed, processing accuracy can be increased. Regarding wear characteristics during use, since the suction surfaces 11, 13 and the upper surface 22 of the support member 20 are substantially equal to each other, a level difference is unlikely to occur at the boundary between both members even after long-term use, and excellent flatness can be maintained. .
【0019】さらに、以上の実施例において、接着剤3
0は、ガラス、樹脂などからなるものであるが、上記吸
着部材10および支持部材20と同程度の被研磨特性を
有するものを用いる。Further, in the above embodiment, the adhesive 3
0 is made of glass, resin, or the like, but one having the same polishing target characteristics as those of the suction member 10 and the support member 20 is used.
【0020】なお、以上の実施例では、支持部材20と
して、多孔質セラミックスからなる隔壁部20bを緻密
質セラミックスからなる支持部20aに接合することに
より、支持部材20の上面22近傍のみを多孔質セラミ
ックスとしたものを示したが、これに限らず、支持部材
20全体を多孔質セラミックスで形成したものでもよ
い。ただし、以上の実施例のように、緻密質セラミック
スからなる支持部20aを用いることによって、全体の
強度、剛性を高くすることができる。In the above embodiment, as the support member 20, the partition wall portion 20b made of porous ceramics is joined to the support portion 20a made of dense ceramics so that only the upper surface 22 of the support member 20 is porous. Although the ceramics is shown, the invention is not limited to this, and the entire supporting member 20 may be formed of porous ceramics. However, the strength and rigidity of the whole can be increased by using the supporting portion 20a made of dense ceramics as in the above embodiments.
【0021】また、本発明の真空吸着装置を構成する多
孔質セラミックスとしては、アルミナ、ジルコニア、炭
化珪素、窒化珪素など、さまざまなセラミックスを用い
ることができる。そして、これらのセラミックスを多孔
質とするには、さまざまな方法があるが、真空吸着装置
に用いるためには各気孔を連通させる必要がある。その
ためには、たとえば、各セラミックスを所定の大きさの
粒子状にし、この粒子をガラスなどで固めて焼成すれば
よい。この方法によれば、確実に各気孔を連通させられ
るとともに、粒子径を調整することで、容易に気孔径を
調整することができる。Various ceramics such as alumina, zirconia, silicon carbide and silicon nitride can be used as the porous ceramics constituting the vacuum adsorption device of the present invention. There are various methods for making these ceramics porous, but it is necessary to make the respective pores communicate with each other in order to use them in a vacuum adsorption device. For that purpose, for example, each ceramic may be formed into particles having a predetermined size, and the particles may be solidified with glass or the like and fired. According to this method, the pores can be surely communicated with each other, and the pore diameter can be easily adjusted by adjusting the particle diameter.
【0022】さらに、この他の方法として、セラミック
原料中に、焼成時に消失するような材料を混入しておい
て、焼成する方法や、焼成温度あるいは焼成時間を調整
して、緻密化せず気孔が残った状態で焼成を終了させる
方法などにより、多孔質セラミックスを得ることができ
る。Further, as another method, a material which disappears during firing is mixed in the ceramic raw material, and the firing method, firing temperature or firing time is adjusted to obtain pores without densification. The porous ceramics can be obtained by, for example, a method of terminating the firing in the state in which the remaining.
【0023】実験例 ここで、図1に示す本発明の真空吸着装置を試作し、実
験を行った。 Experimental Example A vacuum adsorption device of the present invention shown in FIG. 1 was prototyped and tested.
【0024】吸着部材10、支持部材20の隔壁部20
bは、いずれもアルミナ粒子をガラスで固めて焼成して
なる多孔質セラミックスとし、表1に示すように平均気
孔径をさまざまに変化させたものを用意した。また、比
較例として、支持部材20全体を緻密質セラミックスと
した従来のものも用意した。なお、いずれも吸着部材1
0の直径は6インチとした。Partition wall 20 of suction member 10 and support member 20
All of b were porous ceramics obtained by solidifying alumina particles with glass and firing, and various average pore diameters were prepared as shown in Table 1. Further, as a comparative example, a conventional one in which the whole supporting member 20 is made of dense ceramics is also prepared. In addition, both are adsorption members 1
The diameter of 0 was 6 inches.
【0025】まず、これらの真空吸着装置の吸着面11
および支持部材20の上面22を、#800のダイヤモ
ンド砥石を用いて一定条件で研磨した後、全体の平坦度
を測定し、平坦度が1μmより小さいものを○、1μm
以上のものを×とした。次に、各真空吸着装置を用い
て、アスピレータにより吸引圧500mmHgで、6イ
ンチの半導体ウェハの吸着を行い、このウェハ表面を研
磨した時に、ウェハが剥がれなかったものを○、強い力
が加わったときに剥がれたものを△、容易に剥がれたも
のを×として、吸着力を評価した。結果は表1に示す通
りである。First, the suction surface 11 of these vacuum suction devices
After polishing the upper surface 22 of the support member 20 with a # 800 diamond grindstone under certain conditions, the overall flatness is measured.
The above was marked as x. Next, using each vacuum suction device, a 6-inch semiconductor wafer was suctioned by an aspirator at a suction pressure of 500 mmHg, and when the wafer surface was polished, the wafer was not peeled off, and a strong force was applied. The peeling force was evaluated as Δ, and the peeling force was evaluated as x, to evaluate the adsorption force. The results are shown in Table 1.
【0026】[0026]
【表1】 [Table 1]
【0027】これらの結果より明らかに、比較例である
No.10は支持部材20全体を緻密質セラミックスと
したため、研磨後の平坦度が悪く、そのまま吸着テスト
を行ったため吸着力も悪かった。From these results, it is clear that No. In No. 10, since the whole supporting member 20 was made of dense ceramics, the flatness after polishing was poor, and the adsorption test was performed as it was.
【0028】また、No.4は支持部材20を構成する
隔壁部20bの平均気孔径が10μmと大きく、吸着部
材10に対する平均気孔径の比が0.2と大きいため、
吸着時に隔壁部20bからの空気漏れが大きく、吸着力
が悪かった。これに対し、No.1は隔壁部20bの平
均気孔径が10μmと大きいが、平均気孔径の比が0.
125と小さいため、実用可能な吸着力を示した。ま
た、No.7は平均気孔径の比が0.24と大きいが、
隔壁部20bの平均気孔径が6μmと小さいため、実用
可能な吸着力を示した。その他の例は、すべて隔壁部2
0bの平均気孔径が10μm以下で、かつ平均気孔径の
比が0.2以下であるため、優れた吸着力を示した。No. 4 has a large average pore diameter of 10 μm of the partition wall portion 20b constituting the support member 20 and a large ratio of the average pore diameter to the adsorption member 10 of 0.2,
At the time of adsorption, air leakage from the partition wall portion 20b was large and the adsorption force was poor. On the other hand, No. No. 1 has a large average pore diameter of the partition wall portion 20b of 10 μm, but the ratio of the average pore diameter is 0.1.
Since it was as small as 125, it showed a practical adsorption power. In addition, No. 7 has a large average pore diameter ratio of 0.24,
Since the average pore diameter of the partition wall portion 20b was as small as 6 μm, a practical adsorption force was exhibited. All other examples are bulkheads 2.
Since the average pore diameter of 0b was 10 μm or less and the ratio of the average pore diameter was 0.2 or less, excellent adsorption was exhibited.
【0029】したがって、実用可能な吸着力を得るため
には、支持部材20を構成する隔壁部20bの平均気孔
径を10μm以下とするか、または吸着部材10に対す
る平均気孔径の比を0.2より小さくすればよい。さら
に、好ましくは隔壁部20bの平均気孔径を6μm以下
とするか、または吸着部材10に対する平均気孔径の比
を0.1以下とすればよい。Therefore, in order to obtain a practical adsorption force, the average pore diameter of the partition wall portion 20b constituting the support member 20 is set to 10 μm or less, or the ratio of the average pore diameter to the adsorption member 10 is 0.2. It should be smaller. Further, preferably, the average pore diameter of the partition wall portion 20b is 6 μm or less, or the ratio of the average pore diameter to the adsorption member 10 is 0.1 or less.
【0030】なお、上記実験例では、隔壁部20bと吸
着部材10の気孔率は共に30〜50%で、ほぼ同じと
し、平均気孔径のみを変化させたものであるが、隔壁部
20bの気孔率を小さくして空気漏れを減らし、吸着力
を高めることも可能である。しかし、気孔率を調整する
ことは困難であり、また隔壁部20bの気孔率を小さく
すると当然研磨されにくくなるため、真空吸着装置の上
面を研磨した時の平坦度が悪くなってしまう。したがっ
て、吸着部材10と隔壁部20bの気孔率については、
いずれも30〜50%の範囲内としたものが優れてい
た。In the above experimental example, the partition wall portion 20b and the adsorbing member 10 both have a porosity of 30 to 50% and are set to be substantially the same, and only the average pore diameter is changed. It is also possible to reduce the rate to reduce air leakage and increase the adsorption force. However, it is difficult to adjust the porosity, and if the porosity of the partition wall portion 20b is made small, it becomes difficult to polish it naturally, so that the flatness when polishing the upper surface of the vacuum suction device deteriorates. Therefore, regarding the porosities of the suction member 10 and the partition wall portion 20b,
All of them were excellent in the range of 30 to 50%.
【0031】[0031]
【発明の効果】このように本発明によれば、多孔質セラ
ミックスを吸着部材として用いた真空吸着装置におい
て、支持部材の上面も多孔質セラミックスとし、該多孔
質セラミックスの平均気孔率を、10μm以下とする
か、または吸着部材に対する平均気孔径の比を0.2以
下としたことによって、吸着面と支持部材上面の研磨特
性がほぼ等しくなるため、真空吸着装置の上面を研磨し
た時の平坦度を極めて高くできる。また、使用時の吸着
面と支持部材上面の磨耗量もほぼ等しいため、長期使用
時にも、表面の平坦度の劣化が少ない。さらに、真空吸
着具がすべてセラミックスからなるため、耐腐食性、耐
磨耗性などに優れているなどの効果を奏することができ
る。As described above, according to the present invention, in the vacuum adsorption device using the porous ceramics as the adsorption member, the upper surface of the supporting member is also the porous ceramics, and the average porosity of the porous ceramics is 10 μm or less. Or by setting the ratio of the average pore diameter to the suction member to 0.2 or less, the polishing characteristics of the suction surface and the upper surface of the support member become substantially equal, so that the flatness when the upper surface of the vacuum suction device is polished. Can be extremely high. In addition, since the amount of wear between the suction surface and the upper surface of the support member during use is almost the same, the flatness of the surface is less deteriorated even during long-term use. Further, since the vacuum suction tool is entirely made of ceramics, it is possible to obtain effects such as excellent corrosion resistance and abrasion resistance.
【図1】本発明実施例に係る真空吸着装置を示す縦断面
図である。FIG. 1 is a vertical sectional view showing a vacuum suction device according to an embodiment of the present invention.
【図2】図1中のA部分を示す拡大断面図である。FIG. 2 is an enlarged cross-sectional view showing a portion A in FIG.
【図3】本発明の他の実施例を示す縦断面図である。FIG. 3 is a vertical sectional view showing another embodiment of the present invention.
【図4】従来の真空吸着装置を示す縦断面図である。FIG. 4 is a vertical sectional view showing a conventional vacuum suction device.
【図5】図4中のB部分を示す拡大断面図である。5 is an enlarged cross-sectional view showing a portion B in FIG.
10、12・・・吸着部材 11、13・・・吸着面 20・・・・・・支持部材 20a・・・・・支持部 20b・・・・・隔壁部 22・・・・・・上面 21、23・・・吸引孔 30・・・・・・接着剤 10, 12 ... Adsorption member 11, 13 ... Adsorption surface 20 ... Support member 20a ... Support portion 20b ... Partition portion 22 ... Top surface 21 , 23 ... Suction hole 30 ... Adhesive
Claims (1)
持部材に接合してなる真空吸着装置において、上記吸着
部材に対する平均気孔径の比が0.2以下、および/ま
たは平均気孔径10μm以下の多孔質セラミックスで、
上記支持部材の上面を形成したことを特徴とする真空吸
着装置。1. A vacuum adsorption device in which an adsorption member made of porous ceramics is joined to a support member, wherein the ratio of the average pore diameter to the adsorption member is 0.2 or less, and / or the average pore diameter is 10 μm or less. Quality ceramics,
A vacuum suction device characterized in that an upper surface of the support member is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31507891A JP3121886B2 (en) | 1991-11-29 | 1991-11-29 | Vacuum suction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31507891A JP3121886B2 (en) | 1991-11-29 | 1991-11-29 | Vacuum suction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH068086A true JPH068086A (en) | 1994-01-18 |
| JP3121886B2 JP3121886B2 (en) | 2001-01-09 |
Family
ID=18061153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31507891A Expired - Fee Related JP3121886B2 (en) | 1991-11-29 | 1991-11-29 | Vacuum suction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3121886B2 (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0839376A (en) * | 1994-07-29 | 1996-02-13 | Ckd Corp | Vacuum chuck suction plate, vacuum chuck and method of manufacturing suction plate |
| JPH08153992A (en) * | 1994-11-29 | 1996-06-11 | Ckd Corp | Vacuum chuck suction plate |
| JP2000021952A (en) * | 1998-04-27 | 2000-01-21 | Tokyo Seimitsu Co Ltd | Flattening device for wafer |
| US6257966B1 (en) | 1998-04-27 | 2001-07-10 | Tokyo Seimitsu Co., Ltd. | Wafer surface machining apparatus |
| US6309692B1 (en) * | 1996-01-22 | 2001-10-30 | Chugai Ro Co., Ltd. | Method of and apparatus for coating a substrate with a coating material having an even thickness |
| JP2002231745A (en) * | 2001-01-30 | 2002-08-16 | Matsushita Electric Ind Co Ltd | Bump bonder |
| WO2005092564A1 (en) * | 2004-03-25 | 2005-10-06 | Ibiden Co., Ltd. | Vacuum chuck and suction board |
| JP2006086389A (en) * | 2004-09-17 | 2006-03-30 | Taiheiyo Cement Corp | Jig for vacuum suction |
| JP2007012737A (en) * | 2005-06-29 | 2007-01-18 | Disco Abrasive Syst Ltd | Wafer transfer device |
| JP2008100892A (en) * | 2006-10-20 | 2008-05-01 | Nitsukatoo:Kk | Vacuum chuck member comprising porous alumina sintered body and method for producing the same |
| JP2008227125A (en) * | 2007-03-13 | 2008-09-25 | Kyocera Corp | Vacuum adsorption apparatus and adsorption method using the same |
| JP2008260071A (en) * | 2007-04-10 | 2008-10-30 | Kurenooton Kk | Vacuum sucking disk |
| JP2009147384A (en) * | 2009-03-26 | 2009-07-02 | Taiheiyo Cement Corp | Vacuum suction device and method of manufacturing the same |
| JP2009147078A (en) * | 2007-12-13 | 2009-07-02 | Taiheiyo Cement Corp | Vacuum suction device, and manufacturing method thereof |
| JP2010274378A (en) * | 2009-05-29 | 2010-12-09 | Kyocera Corp | Vacuum suction member, vacuum suction device, and method of manufacturing vacuum suction member |
| JP2014200888A (en) * | 2013-04-05 | 2014-10-27 | ローム株式会社 | Suction holding device and wafer polishing device |
| CN108527070A (en) * | 2018-05-25 | 2018-09-14 | 哈尔滨奥瑞德光电技术有限公司 | A kind of tooling for ceramic mobile phone backboard polishing |
| JP2025158258A (en) * | 2024-04-04 | 2025-10-17 | アサヒ繊維工業株式会社 | Adsorption plate and manufacturing method thereof |
-
1991
- 1991-11-29 JP JP31507891A patent/JP3121886B2/en not_active Expired - Fee Related
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0839376A (en) * | 1994-07-29 | 1996-02-13 | Ckd Corp | Vacuum chuck suction plate, vacuum chuck and method of manufacturing suction plate |
| JPH08153992A (en) * | 1994-11-29 | 1996-06-11 | Ckd Corp | Vacuum chuck suction plate |
| US6309692B1 (en) * | 1996-01-22 | 2001-10-30 | Chugai Ro Co., Ltd. | Method of and apparatus for coating a substrate with a coating material having an even thickness |
| JP2000021952A (en) * | 1998-04-27 | 2000-01-21 | Tokyo Seimitsu Co Ltd | Flattening device for wafer |
| US6257966B1 (en) | 1998-04-27 | 2001-07-10 | Tokyo Seimitsu Co., Ltd. | Wafer surface machining apparatus |
| US6517420B2 (en) | 1998-04-27 | 2003-02-11 | Tokyo Seimitsu Co., Ltd. | Wafer surface machining apparatus |
| JP2002231745A (en) * | 2001-01-30 | 2002-08-16 | Matsushita Electric Ind Co Ltd | Bump bonder |
| US7654887B2 (en) | 2004-03-25 | 2010-02-02 | Ibiden Co., Ltd. | Vacuum chuck and suction board |
| WO2005092564A1 (en) * | 2004-03-25 | 2005-10-06 | Ibiden Co., Ltd. | Vacuum chuck and suction board |
| JP2006086389A (en) * | 2004-09-17 | 2006-03-30 | Taiheiyo Cement Corp | Jig for vacuum suction |
| JP2007012737A (en) * | 2005-06-29 | 2007-01-18 | Disco Abrasive Syst Ltd | Wafer transfer device |
| JP2008100892A (en) * | 2006-10-20 | 2008-05-01 | Nitsukatoo:Kk | Vacuum chuck member comprising porous alumina sintered body and method for producing the same |
| JP2008227125A (en) * | 2007-03-13 | 2008-09-25 | Kyocera Corp | Vacuum adsorption apparatus and adsorption method using the same |
| JP2008260071A (en) * | 2007-04-10 | 2008-10-30 | Kurenooton Kk | Vacuum sucking disk |
| JP2009147078A (en) * | 2007-12-13 | 2009-07-02 | Taiheiyo Cement Corp | Vacuum suction device, and manufacturing method thereof |
| JP2009147384A (en) * | 2009-03-26 | 2009-07-02 | Taiheiyo Cement Corp | Vacuum suction device and method of manufacturing the same |
| JP2010274378A (en) * | 2009-05-29 | 2010-12-09 | Kyocera Corp | Vacuum suction member, vacuum suction device, and method of manufacturing vacuum suction member |
| JP2014200888A (en) * | 2013-04-05 | 2014-10-27 | ローム株式会社 | Suction holding device and wafer polishing device |
| CN108527070A (en) * | 2018-05-25 | 2018-09-14 | 哈尔滨奥瑞德光电技术有限公司 | A kind of tooling for ceramic mobile phone backboard polishing |
| JP2025158258A (en) * | 2024-04-04 | 2025-10-17 | アサヒ繊維工業株式会社 | Adsorption plate and manufacturing method thereof |
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| JP3121886B2 (en) | 2001-01-09 |
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