JPH066015A - Manufacture of glass ceramic multilayer wiring substrate - Google Patents
Manufacture of glass ceramic multilayer wiring substrateInfo
- Publication number
- JPH066015A JPH066015A JP16088492A JP16088492A JPH066015A JP H066015 A JPH066015 A JP H066015A JP 16088492 A JP16088492 A JP 16088492A JP 16088492 A JP16088492 A JP 16088492A JP H066015 A JPH066015 A JP H066015A
- Authority
- JP
- Japan
- Prior art keywords
- multilayer wiring
- grinding
- ceramic multilayer
- glass
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Surface Treatment Of Glass (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はガラスセラミック多層配
線基板の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a glass ceramic multilayer wiring board.
【0002】[0002]
【従来の技術】近年、電子機器の小型化、多様化にとも
なって、この種のセラミック多層配線基板には、一層の
高速化、高密度化が要求されている。このような状況の
中,低抵抗金属が使用できる、また比誘電率が低く、信
号伝搬速度の高速化に非常に有利で有る、また、膨張係
数がシリコンに近い等の理由によりガラスセラミック材
料を使用したセラミック多層配線基板が大きな注目を集
めている。2. Description of the Related Art In recent years, with the miniaturization and diversification of electronic equipment, further increase in speed and density are demanded for this type of ceramic multilayer wiring board. Under such circumstances, a low resistance metal can be used, a low relative dielectric constant is very advantageous for speeding up the signal propagation speed, and a glass ceramic material is selected because of a coefficient of expansion close to that of silicon. The ceramic multilayer wiring board used has received a great deal of attention.
【0003】次に、このような背景を持つ従来のガラス
セラミック多層配線基板の製造方法の一例について説明
する。まず、粒子サイズをコントロールしたアルミナ粉
末とガラス粉末をブチラール系バインダーおよび有機溶
剤と共に混合攪拌し、スラリー状にする。これをドクタ
ーブレード法によりキャリアフィルム上に、所定の膜厚
となるようキャスティングし、乾燥させ、グリーンシー
トを得る。こうして得られたグリーンシートに、パンチ
とダイスを使って、所定のピッチにヴィアホールを形成
する。Next, an example of a conventional method for manufacturing a glass-ceramic multilayer wiring board having such a background will be described. First, alumina powder and glass powder with controlled particle size are mixed and stirred with a butyral binder and an organic solvent to form a slurry. This is cast on a carrier film by a doctor blade method so as to have a predetermined film thickness and dried to obtain a green sheet. Via holes are formed at a predetermined pitch on the green sheet thus obtained using a punch and a die.
【0004】次に、前記ヴィアボール部に、低融点金属
からなる導体ペーストをスクリーン印刷法により埋め込
む。また、このとき同様にして、配線パターンを厚膜印
刷する。次に、これらのシートを予め定められた順序に
従って、所定の枚数を精度良く積層して、熱圧着後に約
900℃で焼成する。最後に、焼成が完了したセラミッ
ク基板を水冷しながら外形切断および平面研削を施して
いる。Next, a conductor paste made of a low melting point metal is embedded in the via ball portion by a screen printing method. In addition, at this time, the wiring pattern is similarly thick-film printed. Next, a predetermined number of these sheets are precisely laminated in accordance with a predetermined order, thermocompression-bonded, and fired at about 900 ° C. Finally, the ceramic substrate that has been fired is subjected to contour cutting and surface grinding while being cooled with water.
【0005】従来のガラスセラミック多層配線基板は、
ガラス成分を50%以上も含むため非常に脆く、従来の
アルミナセラミック多層配線基板と比較して約2分の1
の強度しか得られていない。また、内装導体としてA
u,Ag/Pd等の低抵抗金属が使用できるが、これら
の金属は延性が強く、平面研削工程に於いて、研削低石
の目詰まりを導き易い。特に、研削邸石がセラミック基
板に接触し始める初期段階では、最も研削負荷がかか
る。The conventional glass ceramic multilayer wiring board is
Since it contains more than 50% of glass component, it is very brittle, and it is about one half of the conventional alumina ceramic multilayer wiring board.
Only the strength of is obtained. In addition, as an internal conductor, A
Although low resistance metals such as u and Ag / Pd can be used, these metals have strong ductility and are likely to lead to clogging of ground low stones in the surface grinding process. In particular, the grinding load is the highest at the initial stage when the grinding stone starts contacting the ceramic substrate.
【0006】[0006]
【発明が解決しようとする課題】従来のガラスセラミッ
ク多層配線基板の製造方法は、研削の際の研削抵抗が比
較的高い状態が続き易い。そのため、研削後の基板に残
留応力を残したり、30μm以上の加工変質層を形成し
てしまう結果となり、基板の機械的強度を低下させると
いう欠点があった。In the conventional method for manufacturing a glass-ceramic multilayer wiring board, the grinding resistance during grinding tends to be relatively high. As a result, residual stress is left on the substrate after grinding or a work-affected layer having a thickness of 30 μm or more is formed, resulting in a drawback that the mechanical strength of the substrate is reduced.
【0007】[0007]
【課題を解決するための手段】本発明は、焼成が完了し
たガラスセラミック多層配線基板の基板表面をフッ化水
素酸溶液により基板表面のガラス成分を溶解させた後
に、平面研削を施すプロセスを有している。The present invention has a process of performing surface grinding after dissolving a glass component on the substrate surface of a glass ceramic multilayer wiring substrate which has been baked by a hydrofluoric acid solution. is doing.
【0008】[0008]
【実施例】以下、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.
【0009】図1は本発明の一実施例を示すフローチャ
ートである。FIG. 1 is a flow chart showing an embodiment of the present invention.
【0010】図1に示すガラスセラミック多層配線基板
の製造方法は、粉体混合工程S1 、攪拌混合工程S2 、
成膜工程S3 、スルーホール形成工程S4 、厚膜印刷工
程S5 、積層工程S6 、熱圧着工程S7 、焼成工程
S8 、フッ酸処理工程S9 、平面研削工程S10、外形切
断工程S11から成っている。The manufacturing method of the glass-ceramic multilayer wiring board shown in FIG. 1 includes a powder mixing step S 1 , an agitation mixing step S 2 ,
Film-forming step S 3, the through hole forming step S 4, a thick film printing process S 5, the lamination step S 6, the thermocompression bonding step S 7, the firing step S 8, the hydrofluoric acid treatment step S 9, the surface grinding step S 10, the outer shape It consists of a cutting step S 11 .
【0011】このガラスセラミック多層配線基板の製造
に当たっては、まず、アルミナ粉末とガラス粉末を5
5:45w%の混合粉体をブチラール系バインダーと共
にエチルセロソルブ、ブトキシエタノール等の有機溶剤
と共に攪拌混合しS2 、セラミックスラリーを得た。次
に、これを所定の厚さになるようにギャップ調整したド
クターブレードを通してキャリアフィルム上に成膜(S
3 )してグリーンシートとし、これにパンチとダイスを
用いてスルーホール加工(S4 )を施した。その後、ス
ルーホールに導体ペーストを充填すると共に、配線パタ
ーンを厚膜印刷(S5 )した。尚、導体ペーストには、
銀粉85w%およびパラジウム15w%の組成の銀パラ
ジウムペーストを使用した。In manufacturing this glass-ceramic multilayer wiring board, first, alumina powder and glass powder are mixed with each other.
The mixed powder of 5:45 w% was stirred and mixed with an organic solvent such as ethyl cellosolve and butoxyethanol together with a butyral-based binder to obtain S 2 and a ceramic slurry. Next, this is deposited on a carrier film through a doctor blade whose gap is adjusted to a predetermined thickness (S
3 ) Then, it was made into a green sheet, and this was subjected to through hole processing (S 4 ) using a punch and a die. After that, a conductor paste was filled in the through holes, and a wiring pattern was thick-film printed (S 5 ). The conductor paste contains
A silver-palladium paste having a composition of 85% by weight of silver powder and 15% by weight of palladium was used.
【0012】次に、厚膜印刷工程を得た複数枚数のグリ
ーンシートを高精度に積層(S6 )し、熱圧着(S7 )
して積層体を得た。その後、積層体を約900℃の大気
中で焼成(S8 )することで、内層に低抵抗導体で3次
元的に配線回路を構成したガラスセラミック多層配線基
板の焼結体を得た。Next, a plurality of green sheets obtained by the thick film printing process are laminated with high precision (S 6 ), and thermocompression bonding (S 7 ).
A laminate was obtained. Then, the laminated body was fired (S 8 ) in the atmosphere at about 900 ° C. to obtain a sintered body of a glass ceramic multilayer wiring board having a wiring circuit three-dimensionally composed of a low resistance conductor in the inner layer.
【0013】図3は、薬品処理をする前のガラスセラミ
ック多層配線基板の表層部を拡大した部分断面図であ
り、無数のアルミナ粒子2とガラス成分1とで占められ
た複合構造となっている。次に、こうて得られた焼結等
にガラス成分を溶解させるための薬品処理について説明
する。FIG. 3 is an enlarged partial cross-sectional view of the surface layer portion of the glass-ceramic multilayer wiring board before chemical treatment, which has a composite structure in which innumerable alumina particles 2 and glass component 1 are occupied. . Next, a chemical treatment for dissolving the glass component in the thus obtained sintering or the like will be described.
【0014】図2は本発明の薬品処理工程を経たガラス
セラミック多層配線基板の表層部を拡大した部分断面図
である。薬品処理するに当たって、まず、フッ化アンモ
ニウムで約20%に希釈されたフッ化水素溶液の入った
容器を用意し、これに前述した方法で得られた焼結体を
約10分間浸漬した。この結果、ガラスセラミック多層
配線基板表層のガラス成分1が溶解し、アルミナ粒子2
のみが残っている溶解層3が、約50μmの厚さで形成
されているのが確認できた。FIG. 2 is an enlarged partial sectional view of the surface layer portion of the glass-ceramic multilayer wiring board which has undergone the chemical treatment process of the present invention. In the chemical treatment, first, a container containing a hydrogen fluoride solution diluted to about 20% with ammonium fluoride was prepared, and the sintered body obtained by the above-mentioned method was immersed in this for about 10 minutes. As a result, the glass component 1 on the surface layer of the glass-ceramic multilayer wiring board was dissolved, and the alumina particles 2
It was confirmed that the dissolved layer 3 in which only the remaining portion was formed was formed with a thickness of about 50 μm.
【0015】その後、処理の完了した焼成体に付着して
いるフッ化水素溶液および溶解したガラス成分を除去す
るために、純水等で希釈すると共に完全に洗い流した。After that, in order to remove the hydrogen fluoride solution and the dissolved glass component adhering to the fired body that had been treated, it was diluted with pure water and completely rinsed.
【0016】最後に、この溶解層3を完全に平面研削で
削り落とすと共に外形切断を施すが、ガラス成分が除去
されているため、基板表面にはアルミナ粒子1のみが残
った非常に脆い状態となっている。従って、被研削物に
最も負荷のかかる研削初期の段階での研削負荷を低減す
ることができた。Finally, the melted layer 3 is completely scraped off by surface grinding and contour cutting is performed. However, since the glass component has been removed, only the alumina particles 1 remain on the substrate surface, resulting in a very brittle state. Has become. Therefore, it was possible to reduce the grinding load at the initial stage of grinding when the load on the object to be ground is the highest.
【0017】平面研削が完了した後、外形切断を行い、
所定の外形寸法に整えて、ガラスセラミック多層配線基
板として完成できた。After the surface grinding is completed, the outer shape is cut,
It was completed as a glass-ceramic multilayer wiring board by adjusting the external dimensions.
【0018】次に、使用するフッ酸溶液の濃度について
説明する。Next, the concentration of the hydrofluoric acid solution used will be described.
【0019】図4にフッ化水素溶液濃度とガラスセラミ
ック多層配線基板中のガラス成分のエッチング量の関係
を示す。焼成が完了したセラミック基板には、反りが発
生してしまう。この反りを除去し、基板表面を平坦にす
るために、通常100〜200μmの研削代が基板の表
裏両面に必要となる。また、研削負荷を減少させるため
のガラス成分溶解層としては、研削代の範囲内で完全に
除去できる50μm前後の厚さが要求される。FIG. 4 shows the relationship between the hydrogen fluoride solution concentration and the etching amount of the glass component in the glass-ceramic multilayer wiring board. Warpage occurs in the ceramic substrate that has been fired. In order to remove this warp and flatten the surface of the substrate, a grinding allowance of 100 to 200 μm is usually required on both front and back surfaces of the substrate. Further, the glass component melting layer for reducing the grinding load is required to have a thickness of about 50 μm that can be completely removed within the grinding allowance.
【0020】フッ化水素の濃度を20%〜40%とした
のは、これより高濃度だと反応速度が早すぎて、ガラス
成分の溶解層の深さをコントロールする事が困難とな
る、また、これより低濃度だと反応速度が遅く、溶解層
形成に時間が掛かりすぎるためである。When the concentration of hydrogen fluoride is set to 20% to 40%, if the concentration is higher than this, the reaction rate is too fast, and it becomes difficult to control the depth of the molten layer of the glass component. This is because if the concentration is lower than this, the reaction rate is slow and it takes too long to form the dissolved layer.
【0021】但し、成分の異なるガラスセラミック多層
配線基板に当たっては、この限りではなく、フッ化水素
溶液の濃度はガラスセラミック多層配線基板の種類およ
び研削代の厚み等の諸条件に合わせて設定する。However, the present invention is not limited to this when the glass-ceramic multilayer wiring board having different components is used, and the concentration of the hydrogen fluoride solution is set in accordance with various conditions such as the type of the glass-ceramic multilayer wiring board and the thickness of the grinding allowance.
【0022】[0022]
【発明の効果】以上説明したように本発明は、ガラスセ
ラミック多層配線基板表面のガラス成分を溶解し、後に
溶解層を平面研削するに当たって、低負荷で研削するこ
とができるので、研削抵抗を大幅に減らす事が可能とな
り、残留応力をほとんど残さずにガラスセラミック多層
配線基板を平面研削でき、クラック等の防止に役立つと
共に機械的強度の低下を防ぐ事ができるという効果があ
る。As described above, according to the present invention, the glass component on the surface of the glass-ceramic multilayer wiring board is melted, and when the surface of the melted layer is ground later, the grinding can be performed with a low load, so that the grinding resistance can be greatly reduced. The glass-ceramic multilayer wiring board can be surface-ground with almost no residual stress remaining, which is useful for preventing cracks and the like, and also has the effect of preventing a decrease in mechanical strength.
【図1】本発明の一実施例を示すフローチャートであ
る。FIG. 1 is a flowchart showing an embodiment of the present invention.
【図2】薬品処理後の基板表層を拡大した部分断面図で
ある。FIG. 2 is an enlarged partial cross-sectional view of a substrate surface layer after chemical treatment.
【図3】薬品処理前の基板表層を拡大した部分断面図で
ある。FIG. 3 is an enlarged partial sectional view of a substrate surface layer before chemical treatment.
【図4】フッ化水素溶液によるガラス成分のエッチング
量を示すグラフである。FIG. 4 is a graph showing an etching amount of a glass component by a hydrogen fluoride solution.
1 ガラス成分 2 アルミナ粒子 3 溶解層 1 glass component 2 alumina particles 3 melted layer
Claims (2)
削前に、ガラス成分を溶解させる薬品で、表面処理する
工程を含むことを特徴とするガラスセラミック多層配線
基板の製造方法。1. A method for producing a glass-ceramic multilayer wiring board, which comprises a step of surface-treating the surface of the glass-ceramic multilayer wiring board with a chemical that dissolves a glass component before the surface grinding of the glass-ceramic multilayer wiring board.
40%に希釈されたフッ化水素溶液である請求項1記載
のガラスセラミック多層配線基板の製造方法。2. The chemical is ammonium fluoride, which is 20 to
The method for producing a glass-ceramic multilayer wiring board according to claim 1, which is a hydrogen fluoride solution diluted to 40%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16088492A JPH066015A (en) | 1992-06-19 | 1992-06-19 | Manufacture of glass ceramic multilayer wiring substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16088492A JPH066015A (en) | 1992-06-19 | 1992-06-19 | Manufacture of glass ceramic multilayer wiring substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH066015A true JPH066015A (en) | 1994-01-14 |
Family
ID=15724455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16088492A Withdrawn JPH066015A (en) | 1992-06-19 | 1992-06-19 | Manufacture of glass ceramic multilayer wiring substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH066015A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002100866A (en) * | 2000-09-21 | 2002-04-05 | Ibiden Co Ltd | Forming method of via hole |
| WO2009139354A1 (en) * | 2008-05-16 | 2009-11-19 | 日本特殊陶業株式会社 | Ceramic substrate, functional ceramic substrate, probe card and method for manufacturing ceramic substrate |
| JP2010283319A (en) * | 2009-06-03 | 2010-12-16 | Samsung Electro-Mechanics Co Ltd | Multilayer ceramic substrate and method of manufacturing the same |
| JP2012114213A (en) * | 2010-11-24 | 2012-06-14 | Kyocera Corp | Wiring board and method of manufacturing the same |
-
1992
- 1992-06-19 JP JP16088492A patent/JPH066015A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002100866A (en) * | 2000-09-21 | 2002-04-05 | Ibiden Co Ltd | Forming method of via hole |
| WO2009139354A1 (en) * | 2008-05-16 | 2009-11-19 | 日本特殊陶業株式会社 | Ceramic substrate, functional ceramic substrate, probe card and method for manufacturing ceramic substrate |
| KR101233952B1 (en) * | 2008-05-16 | 2013-02-15 | 니혼도꾸슈도교 가부시키가이샤 | Ceramic substrate, functional ceramic substrate, probe card and method for manufacturing ceramic substrate |
| US8564321B2 (en) | 2008-05-16 | 2013-10-22 | Ngk Spark Plug Co., Ltd. | Ceramic substrate, functional ceramic substrate, probe card and method for manufacturing ceramic substrate |
| JP5844972B2 (en) * | 2008-05-16 | 2016-01-20 | 日本特殊陶業株式会社 | Ceramic substrate, probe card, and method for manufacturing ceramic substrate |
| JP2010283319A (en) * | 2009-06-03 | 2010-12-16 | Samsung Electro-Mechanics Co Ltd | Multilayer ceramic substrate and method of manufacturing the same |
| JP2012114213A (en) * | 2010-11-24 | 2012-06-14 | Kyocera Corp | Wiring board and method of manufacturing the same |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990831 |