JPH065926A - Chip type light emitting diode - Google Patents
Chip type light emitting diodeInfo
- Publication number
- JPH065926A JPH065926A JP4184405A JP18440592A JPH065926A JP H065926 A JPH065926 A JP H065926A JP 4184405 A JP4184405 A JP 4184405A JP 18440592 A JP18440592 A JP 18440592A JP H065926 A JPH065926 A JP H065926A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- substrate
- electrodes
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
(57)【要約】
【目的】 電極の識別が容易に行なえるチップ形発光ダ
イオードを提供する。
【構成】 基板１１の上面に一対のリード電極１２ａ、
１２ｂが形成され、一方のリード電極１２ａに発光ダイ
オード素子１３が接合され、発光ダイオード素子１３と
他方のリード電極１２ｂとの間が金属細線１４で接続さ
れている。これらの発光ダイオード素子１３や金属細線
１４等を被ってモールド部１５が形成されている。ま
た、リード電極１２ａと、基板１１の下面の下部電極と
の間は、基板１１の側面１６ａに形成された凹部１７に
配された端子電極１８ａを介して電気的に接続され、他
方のリード電極１２ｂと、基板１１の下面の別の下部電
極との間は、平坦な側面１６ｂの配された端子電極１８
ｂを介して電気的に接続されている。電極の識別は凹部
１７の有無により行なう。
(57) [Abstract] [Purpose] To provide a chip type light emitting diode in which electrodes can be easily identified. [Structure] A pair of lead electrodes 12a on the upper surface of the substrate 11,
12b is formed, the light emitting diode element 13 is joined to one lead electrode 12a, and the light emitting diode element 13 and the other lead electrode 12b are connected by a thin metal wire 14. A mold portion 15 is formed by covering the light emitting diode element 13, the thin metal wire 14, and the like. Further, the lead electrode 12a and the lower electrode on the lower surface of the substrate 11 are electrically connected via the terminal electrode 18a arranged in the recess 17 formed in the side surface 16a of the substrate 11, and the other lead electrode is formed. 12b and another lower electrode on the lower surface of the substrate 11 between the terminal electrodes 18 having a flat side surface 16b.
It is electrically connected via b. The electrode is identified by the presence or absence of the recess 17.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、家電製品等に組み込ま
れる基板の表面実装に用いられるチップ形発光ダイオー
ドに係り、特に、そのチップ形発光ダイオードの電極の
識別構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip type light emitting diode used for surface mounting of a substrate incorporated in home electric appliances and the like, and more particularly to a structure for identifying electrodes of the chip type light emitting diode.
【０００２】[0002]
【従来の技術】従来のこの種のチップ形発光ダイオード
として、例えば、図５に示すようなものがある。このチ
ップ形発光ダイオード１の構成を図５を参照して説明す
る。すなわち、ガラスエポキシ樹脂基板やセラミック等
の基板２の上面に図示しない一対のリード電極が形成さ
れ、その一方のリード電極に図示しない発光ダイオード
素子が接合され、その発光ダイオード素子と他方のリー
ド電極との間が図示しない金線等の金属細線で接続され
ている。そして、これらの発光ダイオード素子や金属細
線等は、透光性合成樹脂等で被われ、モールド部３が形
成されている。また、基板２の上面の各リード電極と、
基板２の下面に配された図示しない一対の下部電極との
間は、基板２の対向する各側面の凹部４ａ、４ｂに配さ
れた端子電極５ａ、５ｂを介してそれぞれ電気的に接続
されている。さらに、基板２の上面には、電極の識別の
ために、一方側の電極（例えば、カソード側）にマーク
６が被着されている。2. Description of the Related Art As a conventional chip type light emitting diode of this type, for example, there is one shown in FIG. The structure of the chip type light emitting diode 1 will be described with reference to FIG. That is, a pair of lead electrodes (not shown) are formed on the upper surface of the substrate 2 such as a glass epoxy resin substrate or ceramic, and a light emitting diode element (not shown) is bonded to one of the lead electrodes, and the light emitting diode element and the other lead electrode are connected to each other. The spaces are connected by a thin metal wire such as a gold wire (not shown). The light emitting diode element, the thin metal wire, and the like are covered with a transparent synthetic resin or the like to form the mold portion 3. In addition, each lead electrode on the upper surface of the substrate 2,
The pair of lower electrodes (not shown) arranged on the lower surface of the substrate 2 are electrically connected to each other via the terminal electrodes 5a and 5b arranged in the concave portions 4a and 4b on the opposite side surfaces of the substrate 2, respectively. There is. Further, on the upper surface of the substrate 2, a mark 6 is attached to one electrode (for example, the cathode side) for identifying the electrode.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、このよ
うな構成を有する従来例の場合には、次のような問題が
ある。すなわち、このようなチップ形発光ダイオード１
は一辺が数mm程度の大きさであり、基板２に付されたマ
ーク６の一辺は１mmに満たない大きさでしかない。従っ
て、表面実装工程等で、このチップ形発光ダイオード１
の電極を識別するときに、マーク６による識別では、そ
の面積が小さい上に、電極の判別をマーク６の有無とい
う色の違いに基づいて行なうので、光の状態等によりマ
ーク６の有無が判定しにくい場合があり、電極の識別が
しにくいという問題がある。However, the conventional example having such a structure has the following problems. That is, such a chip type light emitting diode 1
Has a size of several mm on one side, and one side of the mark 6 attached to the substrate 2 is less than 1 mm. Therefore, in the surface mounting process, etc., the chip type light emitting diode 1
When identifying the electrodes of the above, when the marks 6 are used for identification, the area is small and the electrodes are discriminated based on the color difference such as the presence or absence of the marks 6. Therefore, the presence or absence of the marks 6 is determined by the light condition or the like. In some cases, it is difficult to identify the electrodes, which is a problem.
【０００４】本発明は、このような事情に鑑みてなされ
たものであって、電極の識別を容易にできるチップ形発
光ダイオードを提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a chip type light emitting diode in which electrodes can be easily identified.
【０００５】[0005]
【課題を解決するための手段】本発明は、このような目
的を達成するために、次のような構成をとる。すなわ
ち、本発明は、四角形の基板の上面に一対のリード電極
を形成し、一方のリード電極に発光ダイオード素子を接
合し、前記発光ダイオード素子と他方のリード電極との
間を金属細線で接続し、さらに、前記基板の上面に透光
性合成樹脂製のモールド部を、前記発光ダイオード素子
および金属細線を被うように形成したチップ形発光ダイ
オードにおいて、前記各リード電極の導出端に接続する
二つの端子電極の内、一方を基板の平坦側面部に形成
し、他方の端子電極を前記側面部に対向しかつ凹部が形
成された側面部に形成したものである。The present invention has the following constitution in order to achieve such an object. That is, according to the present invention, a pair of lead electrodes are formed on the upper surface of a rectangular substrate, a light emitting diode element is joined to one of the lead electrodes, and the light emitting diode element and the other lead electrode are connected by a thin metal wire. Further, in a chip type light emitting diode in which a transparent synthetic resin mold part is formed on the upper surface of the substrate so as to cover the light emitting diode element and the thin metal wire, the mold part is connected to the lead-out end of each lead electrode. One of the two terminal electrodes is formed on a flat side surface portion of the substrate, and the other terminal electrode is formed on a side surface portion facing the side surface portion and having a recess.
【０００６】[0006]
【作用】本発明の作用は次のとおりである。すなわち、
基板の上面に配された各リード電極の導出端に接続する
二つの端子電極の内、一方を基板の平坦側面部に形成
し、他方の端子電極を前記側面部に対向しかつ凹部が形
成された側面部に形成したことにより、電極の判別は基
板の側面に形成された凹部の有無という形状の違いに基
づいて行なえるので、電極の識別が容易になる。The operation of the present invention is as follows. That is,
Of the two terminal electrodes connected to the lead-out end of each lead electrode arranged on the upper surface of the substrate, one is formed on the flat side surface portion of the substrate, and the other terminal electrode is opposed to the side surface portion and a recess is formed. Since the electrodes are formed on the side surface portion, the electrodes can be discriminated based on the difference in shape such as the presence or absence of the concave portion formed on the side surface of the substrate, so that the electrodes can be easily identified.
【０００７】[0007]
【実施例】以下、図面を参照して本発明の一実施例を説
明する。まず、本発明の一実施例に係るチップ形発光ダ
イオード１０の構成を図１を参照して説明する。すなわ
ち、ガラスエポキシ樹脂基板やセラミック等の基板１１
の上面に一対のリード電極１２ａ、１２ｂが形成され、
その一方のリード電極１２ａに発光ダイオード素子１３
が接合され、その発光ダイオード素子１３と他方のリー
ド電極１２ｂとの間が金線等の金属細線１４で接続され
ている。そして、これらの発光ダイオード素子１３や金
属細線１４等は、透光性合成樹脂等で被われ、モールド
部１５が形成されている。また、基板１１の上面の一方
のリード電極１２ａと、基板１１の下面に配された図示
しない下部電極との間は、基板１１の側面１６ａに形成
された凹部１７に配された端子電極１８ａを介して電気
的に接続され、他方のリード電極１２ｂと、基板１１の
下面の別の下部電極との間は、上記の側面１６ａに対向
する平坦な側面１６ｂに配された端子電極１８ｂを介し
て電気的に接続されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. First, a configuration of a chip type light emitting diode 10 according to an embodiment of the present invention will be described with reference to FIG. That is, the substrate 11 such as a glass epoxy resin substrate or ceramic
A pair of lead electrodes 12a and 12b are formed on the upper surface of
The light emitting diode element 13 is provided on one of the lead electrodes 12a.
Are connected, and the light emitting diode element 13 and the other lead electrode 12b are connected by a thin metal wire 14 such as a gold wire. The light emitting diode element 13 and the thin metal wire 14 are covered with a transparent synthetic resin or the like to form a mold part 15. Further, between the one lead electrode 12a on the upper surface of the substrate 11 and the lower electrode (not shown) arranged on the lower surface of the substrate 11, the terminal electrode 18a arranged on the concave portion 17 formed on the side surface 16a of the substrate 11 is provided. Is electrically connected via the terminal electrode 18b disposed on the flat side surface 16b facing the side surface 16a between the other lead electrode 12b and another lower electrode on the lower surface of the substrate 11. It is electrically connected.
【０００８】次に、上述のようなチップ形発光ダイオー
ド１０の製造方法を図２ないし図４を参照して説明す
る。チップ形発光ダイオード１０は、図２に示すよう
に、Ｘ方向に２個、Ｙ方向に複数個（図では８個）が配
された合計１６個のチップ形発光ダイオード１０を一ユ
ニットとして、複数ユニットが一枚の基板１１上に形成
され製造される。Next, a method of manufacturing the chip type light emitting diode 10 as described above will be described with reference to FIGS. As shown in FIG. 2, the chip type light emitting diode 10 includes a plurality of chip type light emitting diodes 10 each including two in the X direction and a plurality (eight in the figure) in the Y direction as one unit. The unit is formed and manufactured on one substrate 11.
【０００９】基板１１には、各ユニット間に基板１１を
貫通する溝２１が形成されており、この溝２１の対向す
る内側面には、Ｙ方向に配された各チップ形発光ダイオ
ード１０の端子電極１８ｂが一体となって形成されてい
る。また、基板１１の上面には、各チップ形発光ダイオ
ード１０と同数のリード電極１２ｂが、前述の端子電極
１８ｂに接続されて形成されている。さらに、各ユニッ
ト内には、互いに対向するように形成された前述のリー
ド電極１２ｂの間に、Ｘ方向に配された２個のチップ形
発光ダイオード１０用のリード端子１２ａが、Ｙ方向に
並設され、それらのリード電極１２ａの中央にはスルー
ホール２２が形成され、そのスルーホール２２の内壁に
はＹ方向に配された各チップ形発光ダイオード１０の端
子電極１８ａがそれぞれ形成されている。なお、基板１
１の下面には、溝２１とスルーホール２２部分の端子電
極１８ａ、１８ｂにそれぞれ接続された状態で、各下部
電極が形成されている。Grooves 21 penetrating the substrate 11 are formed between the units on the substrate 11, and terminals of the chip type light emitting diodes 10 arranged in the Y direction are formed on inner surfaces of the grooves 21 which face each other. The electrode 18b is integrally formed. Further, the same number of lead electrodes 12b as that of each chip type light emitting diode 10 are formed on the upper surface of the substrate 11 so as to be connected to the above-mentioned terminal electrodes 18b. Further, in each unit, two lead terminals 12a for the chip type light emitting diode 10 arranged in the X direction are arranged in the Y direction between the lead electrodes 12b formed so as to face each other. A through hole 22 is formed in the center of each of the lead electrodes 12a, and the terminal electrode 18a of each chip type light emitting diode 10 arranged in the Y direction is formed on the inner wall of the through hole 22. The substrate 1
On the lower surface of No. 1, lower electrodes are formed in a state of being connected to the terminal electrodes 18a and 18b in the groove 21 and the through hole 22, respectively.
【００１０】上述のような基板１１の各リード電極１２
ａには、それぞれ発光ダイオード素子１３が接合され、
その発光ダイオード素子１３と他方のリード電極１２ｂ
との間は、それぞれ金属細線１４で接続される（図２参
照）。Each lead electrode 12 of the substrate 11 as described above
The light emitting diode elements 13 are respectively joined to a,
The light emitting diode element 13 and the other lead electrode 12b
A thin metal wire 14 is connected between the two and (see FIG. 2).
【００１１】次に、図３に示すように、Ｙ方向に配され
た各チップ形発光ダイオード１０のモールド部１５を一
体に形成し、これらの発光ダイオード素子１３や金属細
線１４等を透光性合成樹脂等で被う。Next, as shown in FIG. 3, the mold portion 15 of each chip type light emitting diode 10 arranged in the Y direction is integrally formed, and the light emitting diode element 13 and the metal thin wire 14 are translucent. Cover with synthetic resin.
【００１２】最後に、図４の一点鎖線で示す箇所を切断
し、単体のチップ形発光ダイオード１０を形成する。こ
のとき、溝２１の内側面がチップ形発光ダイオード１０
の一方の側面１６ｂとなり、また、スルーホール２２を
半分に切断した切断面がチップ形発光ダイオード１０の
他方の側面１６ａとなり、その側面１６ａの切断された
スルーホール２２が図１の凹部１７となる。Finally, the portion shown by the alternate long and short dash line in FIG. 4 is cut to form a single chip light emitting diode 10. At this time, the inner surface of the groove 21 is the chip type light emitting diode 10
One side surface 16b, and the cut surface obtained by cutting the through hole 22 in half becomes the other side surface 16a of the chip type light emitting diode 10, and the cut through hole 22 of the side surface 16a becomes the recess 17 of FIG. .
【００１３】[0013]
【発明の効果】以上の説明から明らかなように、本発明
によれば、基板の上面に配された各リード電極の導出端
に接続する二つの端子電極の内、一方を基板の平坦側面
部に形成し、他方の端子電極を前記側面部に対向しかつ
凹部が形成された側面部に形成したことにより、電極の
判別は基板の側面に形成された凹部の有無という形状の
違いに基づいて行なえ、従って、表面実装工程等におい
て、電極の判別を容易に行なうことができる。As is apparent from the above description, according to the present invention, one of the two terminal electrodes connected to the lead-out end of each lead electrode arranged on the upper surface of the substrate is a flat side surface portion of the substrate. Since the other terminal electrode is formed on the side surface portion facing the side surface portion and having the concave portion formed therein, the electrodes are discriminated based on the difference in shape such as the presence or absence of the concave portion formed on the side surface of the substrate. Therefore, the electrodes can be easily discriminated in the surface mounting process or the like.
【図１】本発明の一実施例に係るチップ形発光ダイオー
ドの構成を示す斜視図である。FIG. 1 is a perspective view showing a configuration of a chip type light emitting diode according to an embodiment of the present invention.
【図２】実施例装置の製造工程において、発光ダイオー
ド素子とリード電極との間を金属細線で接続した状態を
示す図である。FIG. 2 is a diagram showing a state in which a light emitting diode element and a lead electrode are connected by a thin metal wire in the manufacturing process of the device of the embodiment.
【図３】実施例装置の製造工程において、モールド部が
形成された状態を示す図である。FIG. 3 is a diagram showing a state in which a mold part is formed in the manufacturing process of the device of the embodiment.
【図４】実施例装置の製造工程において、基板の切断位
置を示す図である。FIG. 4 is a diagram showing a cutting position of the substrate in a manufacturing process of the apparatus of the embodiment.
【図５】従来例に係るチップ形発光ダイオードの概略構
成を示す斜視図である。FIG. 5 is a perspective view showing a schematic configuration of a chip type light emitting diode according to a conventional example.
１０ … チップ形発光ダイオード １１ … 基板 １２ａ、１２ｂ … リード電極 １３ … 発光ダイオード素子 １４ … 金属細線 １５ … モールド部 １６ａ、１６ｂ … 側面 １７ … 凹部 １８ａ、１８ｂ … 端子電極 ２１ … 溝 ２２ … スルーホール 10 ... Chip type light emitting diode 11 ... Substrate 12a, 12b ... Lead electrode 13 ... Light emitting diode element 14 ... Metal thin wire 15 ... Mold part 16a, 16b ... Side surface 17 ... Recess 18a, 18b ... Terminal electrode 21 ... Groove 22 ... Through hole
Claims (1)
を形成し、一方のリード電極に発光ダイオード素子を接
合し、前記発光ダイオード素子と他方のリード電極との
間を金属細線で接続し、さらに、前記基板の上面に透光
性合成樹脂製のモールド部を、前記発光ダイオード素子
および金属細線を被うように形成したチップ形発光ダイ
オードにおいて、 前記各リード電極の導出端に接続する二つの端子電極の
内、一方を基板の平坦側面部に形成し、他方の端子電極
を前記側面部に対向しかつ凹部が形成された側面部に形
成したことを特徴とするチップ形発光ダイオード。1. A pair of lead electrodes are formed on the upper surface of a rectangular substrate, a light emitting diode element is joined to one of the lead electrodes, and the light emitting diode element and the other lead electrode are connected by a thin metal wire. Further, in a chip type light emitting diode in which a light-transmitting synthetic resin mold part is formed on the upper surface of the substrate so as to cover the light emitting diode element and the thin metal wire, two molds are connected to the lead-out ends of the lead electrodes. One of the terminal electrodes is formed on a flat side surface portion of the substrate, and the other terminal electrode is formed on a side surface portion facing the side surface portion and having a concave portion formed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4184405A JPH065926A (en) | 1992-06-18 | 1992-06-18 | Chip type light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4184405A JPH065926A (en) | 1992-06-18 | 1992-06-18 | Chip type light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH065926A true JPH065926A (en) | 1994-01-14 |
Family
ID=16152597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4184405A Pending JPH065926A (en) | 1992-06-18 | 1992-06-18 | Chip type light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065926A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936432A (en) * | 1995-07-17 | 1997-02-07 | Sharp Corp | Horizontal light emitting type LED and manufacturing method thereof |
| JPH11163409A (en) * | 1997-12-01 | 1999-06-18 | Matsushita Electron Corp | Light emitting device |
| WO2001045181A1 (en) * | 1999-12-17 | 2001-06-21 | Yoon Sun Kwan | Led lamp having female type leads formed on pcb |
| JP2001168393A (en) * | 1999-12-08 | 2001-06-22 | Rohm Co Ltd | Chip type semiconductor light emitting device |
| WO2006035626A1 (en) * | 2004-09-30 | 2006-04-06 | Matsushita Electric Industrial Co., Ltd. | Light-emitting unit |
| JP2007059837A (en) * | 2005-08-26 | 2007-03-08 | Stanley Electric Co Ltd | Surface mount type LED |
| WO2008059650A1 (en) * | 2006-11-14 | 2008-05-22 | Harison Toshiba Lighting Corp. | Light emitting device, its manufacturing method and its mounted substrate |
| JP2008205516A (en) * | 2008-05-29 | 2008-09-04 | Sanyo Electric Co Ltd | Semiconductor device |
| JP2008205515A (en) * | 2008-05-29 | 2008-09-04 | Sanyo Electric Co Ltd | Manufacturing method of semiconductor device |
| JP2008258455A (en) * | 2007-04-06 | 2008-10-23 | Citizen Electronics Co Ltd | Light emitting diode |
| JP2022121383A (en) * | 2021-02-08 | 2022-08-19 | 隆達電子股▲ふん▼有限公司 | Light-emitting element package, display device, and manufacturing method of display device |
-
1992
- 1992-06-18 JP JP4184405A patent/JPH065926A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0936432A (en) * | 1995-07-17 | 1997-02-07 | Sharp Corp | Horizontal light emitting type LED and manufacturing method thereof |
| JPH11163409A (en) * | 1997-12-01 | 1999-06-18 | Matsushita Electron Corp | Light emitting device |
| JP2001168393A (en) * | 1999-12-08 | 2001-06-22 | Rohm Co Ltd | Chip type semiconductor light emitting device |
| WO2001045181A1 (en) * | 1999-12-17 | 2001-06-21 | Yoon Sun Kwan | Led lamp having female type leads formed on pcb |
| WO2006035626A1 (en) * | 2004-09-30 | 2006-04-06 | Matsushita Electric Industrial Co., Ltd. | Light-emitting unit |
| KR101252675B1 (en) * | 2005-08-26 | 2013-04-09 | 스탠리 일렉트릭 컴퍼니, 리미티드 | Surface Mounting Type LED Lamp |
| JP2007059837A (en) * | 2005-08-26 | 2007-03-08 | Stanley Electric Co Ltd | Surface mount type LED |
| WO2008059650A1 (en) * | 2006-11-14 | 2008-05-22 | Harison Toshiba Lighting Corp. | Light emitting device, its manufacturing method and its mounted substrate |
| JP2008258455A (en) * | 2007-04-06 | 2008-10-23 | Citizen Electronics Co Ltd | Light emitting diode |
| JP2008205515A (en) * | 2008-05-29 | 2008-09-04 | Sanyo Electric Co Ltd | Manufacturing method of semiconductor device |
| JP2008205516A (en) * | 2008-05-29 | 2008-09-04 | Sanyo Electric Co Ltd | Semiconductor device |
| JP2022121383A (en) * | 2021-02-08 | 2022-08-19 | 隆達電子股▲ふん▼有限公司 | Light-emitting element package, display device, and manufacturing method of display device |
| JP2024016159A (en) * | 2021-02-08 | 2024-02-06 | 隆達電子股▲ふん▼有限公司 | light emitting device package |
| US12206059B2 (en) | 2021-02-08 | 2025-01-21 | Lextar Electronics Corporation | Light emitting element package including substrate with edge notch and display device including light emitting element package |
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