JPH065897A - Integrated photovoltaic device - Google Patents

Abstract

PURPOSE:To prevent a film at the end of a pattern in a laminated part from peeling off by disposing a metal oxide film between an amorphous semiconductor film and a highly reflective metal film and processing the oxide film by an energy beam. CONSTITUTION:First electrode films 2a and 2b are formed on one main surface of a transparent dielectric substrate 1. An amorphous semiconductor film 3 and a metal oxide film 4 are laminated, in that order, over the substrate so as to cover the electrode films, and an opening 9 is formed in one part of the laminate. A highly reflective metal film 5 and a second electrode film 6 are formed in that order on the substrate. Thus, a laminated body, consisting of the laminate that contains the amorphous semiconductor film 3 and the metal oxide film 4 and the laminate that contains the highly reflective metal film 5 and the second electrode film 6, is formed over the first electrodes 2a and 2b. The remaining main surface side of the substrate is exposed to an energy beam E.B. The metal oxide film 4 is formed between the highly reflective metal film 5 and the second electrode 6, whereby superior patterning can be effected without causing peeling at a contact surface between the amorphous semiconductor film and the highly reflective metal film at the end of a pattern.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to an integrated photovoltaic device for converting light energy into electric energy.

[0002]

2. Description of the Related Art The recent recognition of global environment protection has become a major driving force for promoting the use of clean and pollution-free photovoltaic devices.

FIG. 6 is an element structure diagram of a conventional integrated photovoltaic device. This device is constructed such that a plurality of photoelectric conversion elements are electrically connected in series on one substrate. (6 in the figure
1) is a translucent insulating substrate made of quartz or glass, and (62a) (62a
b) ... is a transparent conductive film made of tin oxide, indium tin oxide or the like formed on the substrate (61), (63a) (63b) ...
Is an amorphous semiconductor film made of amorphous silicon or the like formed on the transparent conductive films (62a) (62b), etc., and efficiently absorbs heat by an energy beam when manufacturing the present photovoltaic device. Exhibit function. (64a) (64b) ... are amorphous semiconductor films (63
a) (63b) ... Highly reflective metal film made of silver or the like deposited on the upper surface, and (65a) (65b) ... Highly reflective metal film (64a) (64b) ... Zinc oxide (ZnO) formed thereon. ₂ ) or a back electrode made of aluminum or the like, (66a) (66b) ... are photoactive layers made of a semiconductor material such as an amorphous semiconductor, and (67a) (67b) ... are light incident sides of the photovoltaic device. It is a front electrode made of a transparent conductive film serving as an electrode of. The photoactive layers (66a) (66b) ... are semiconductor films made of amorphous silicon or the like, and are provided with, for example, a PIN junction parallel to the film surface, and the front electrodes (67a) (67b) ... The light incident from is absorbed by the photoactive layers (66a), (66b), and then extracted as light carriers to the outside through the back electrodes (65a) (65b) and the front electrodes (67a) (67b). .

In this photovoltaic device, the photoelectric conversion element (68
a) (68b) ... are formed on the surface of the substrate (61),
The photoelectric conversion elements adjacent to each other are electrically connected in series. That is, the photoelectric conversion element (68a) on the left side is a transparent conductive film in which the front electrode (67a) of the photoelectric conversion element is electrically connected to the back electrode (65b) of the other photoelectric conversion element (68b) on the right. It has been patterned to bond with 62b).

In this way, a photovoltaic device in which a plurality of photoelectric conversion elements are formed in a pattern so as to be electrically connected in series on one substrate and a high voltage can be taken out from one substrate is generally an integrated photovoltaic device. It is called a device. This integrated photovoltaic device is disclosed, for example, in JP-A-60-3018.
No. 4 and the like are described in detail.

FIG. 7 is a cross-sectional view of an element structure for explaining a method for manufacturing the conventional photovoltaic device. The same figure (a)
In the first step shown in (1), transparent conductive films (62a) (62b) made of a tin oxide film or the like are formed over a plurality of regions on one main surface of the translucent insulating substrate (61).

Next, in a second step shown in FIG. 2B, an amorphous semiconductor film (amorphous semiconductor film) made of amorphous silicon or the like is formed on the main surface so as to cover the transparent conductive films (62a) (62b). After forming 63), an opening (69) is provided in a part of the amorphous semiconductor film located above the transparent conductive films (62a) (62b). The openings (69) are formed by back electrodes (65a) (65b) ...
It is provided to ensure electrical connection with 2a) (62b).

Then, in a third step shown in FIG. 3C, the high reflection metal film (64) and the back electrode (65) ...
It is laminated on the amorphous semiconductor film (63) so as to cover the opening (69) as well.

In the fourth step shown in FIG. 2D, the transparent conductive film (62) corresponding to the vicinity of the adjacent space between the photoelectric conversion elements is formed.
a) (62b) ... At least the laminated portion of the amorphous semiconductor film (63), the highly reflective metal film (64) and the back electrode (65) is irradiated with at least the other main part of the substrate (61). Energy beam from the surface side
Irradiate (EB). Thereby, the transparent conductive film (62a) (62b)
A part of each of ... Will be exposed.

Incidentally, the reason for removing a part of the back electrodes (65), etc. on the transparent conductive films (62a) (62b) ... With an energy beam in this step is that the transparent conductive films (62a) exposed by such removal are removed. )
(62b) ... Because the semiconductor film (66) formed in a later step and the front electrodes (67a) (67b) between the photoelectric conversion elements are also removed by irradiation with the energy beam, the beam This is to secure the traveling path of.

Next, in a fifth step shown in FIG. 3E, the semiconductor film 66 is formed over the entire main surface of the substrate 61, and the transparent conductive film 62a in the vicinity of the adjacent space is formed. (62b) ... The semiconductor film (66) thereon is removed by irradiation with an energy beam (EB) from the other main surface side. By this removal, an opening (70) for connection with the transparent conductive films (62a) (62b) ... for forming the integrated structure described above is formed.

Next, in the sixth step shown in FIG. 3F, the front electrode is formed and the front electrode is formed on the transparent conductive films (62a) (62b) in the vicinity of the opening (70). Semiconductor film (66)
This laminated body is divided by irradiating the portion of the laminated body of (1) with an energy beam (EB). As a result, the front electrode is divided for each photoelectric conversion element ((67a) (67b) ...), and the photovoltaic device is completed.

The main functions of some films constituting such a photovoltaic device will be described. First, the highly reflective metal films (64a) (64b) ...
Has a function as an electrode because it is usually made of a material having good conductivity, but its main function is to use the photoactive layers (66a) (66b) via the front electrodes (67a) (67b). …
The light which has passed through but has not yet been absorbed is reflected on the surface of the highly reflective metal films (64a) (64b) ..., and again guided into the photoactive layer. Therefore, by using the highly reflective metal films (64a) (64b) ..., the light incident on the photovoltaic device can be more effectively used, and the conversion efficiency can be improved.

The functions of the amorphous semiconductor films (63a) (63b) ... Are the transparent conductive films (62a) (62b) in the above-mentioned fourth step (FIG. 7D).
… Highly reflective metal film (64a) (64b) on top and back electrode (65a)
(65b) ... are to be easily divided for each photoelectric conversion element. That is, this division is performed by irradiation with an energy beam, but generally, the metal film deposited on the transparent conductive film cannot sufficiently absorb the energy beam, and as a result, the transparent conductive film (62a) (62b). )… On the surface
Many residues such as these metal films remain. Therefore, the amorphous semiconductor films (63a) (63b), which can efficiently absorb the heat of the energy beam, are highly reflective metal films (6
4a) (64b) ... and back electrodes (65a) (65b) ... are adhered to these metal films (64a) (64b) ... and back electrodes (65a)
(65b) ... can obtain the heat by heat conduction from the amorphous semiconductor film (63a) (63b), which has efficiently absorbed the heat of the energy beam, and then explodes together with the amorphous semiconductor film. It will be melted and removed.

[0015]

As described above, in the conventional photovoltaic device, the use of the highly reflective metal films (64a) (64b) ... for improving the conversion efficiency and the processing of the metal film. The use of the amorphous semiconductor films (63a) (63b) ... for facilitating the process is indispensable structurally.

However, although these are both indispensable materials, if these films themselves are adhered to each other and pattern processing is performed by an energy beam, this pattern is left at the end of the pattern left after processing. The peeling between the highly reflective metal film and the amorphous semiconductor film may occur, which may cause a problem in manufacturing.

This state is shown in FIG. 6 (b), which is an enlarged sectional view in the circle of FIG. 6 (a). When peeling occurs at the contact interface between the high-reflection metal film (64b) and the amorphous semiconductor film (63b) as shown in the figure, the film formation by the semiconductor film formed in the subsequent step cannot be performed well, and This brings about an adverse effect such as the generation of such a cavity (a).

Despite such inconvenience, the reason why the amorphous semiconductor film (63b) and the highly reflective metal film (64b) are adhered and formed is that both films have a function related to the back electrode. This is because all of them have to be arranged at a location structurally close to the back electrode. In other words, the highly reflective metal film (64a) ... is not enough for the back electrode (65a).
The amorphous semiconductor film is used to complement the light reflection. On the other hand, the amorphous semiconductor film is formed of a highly reflective metal film formed on the back electrode which is also a metal film when the back electrode is a metal film. This is because it is provided in order to facilitate the process when performing processing with the energy beam.

[0019]

A feature of the present invention is that a plurality of regions on one main surface of a substrate are provided with a first electrode film, an amorphous semiconductor film, a metal oxide film, a highly reflective metal film, A photoelectric conversion element, in which a second electrode film, a semiconductor film, and a third electrode film are laminated in this order, is divided and arranged, and the photoelectric conversion elements are arranged at an adjacent interval between the elements so that the third photoelectric conversion element is adjacent to the third photoelectric conversion element.
An integrated photovoltaic device in which an electrode film and a first electrode film of the other photoelectric conversion element are connected in series, wherein the first electrode film is divided into a plurality of parts, and is formed on the first electrode film, Further, a laminated body of the amorphous semiconductor film and the metal oxide film, which has an opening in a part thereof, is formed on the laminated body so as to also cover the opening, and an energy beam is irradiated. From the second electrode film of the adjacent photoelectric conversion element to the first photoelectric conversion element of the other photoelectric conversion element, which is divided together with the laminated body by the laminated body of the highly reflective metal film and the second electrode film. A semiconductor film that is laminated so as to extend up to the electrode film and is divided by irradiation of an energy beam on the first electrode film of the other photoelectric conversion element, and a semiconductor film that is laminated on the semiconductor film And is connected to the semiconductor film to generate the energy. The first electrode of the other photoelectric conversion element that extends to the first electrode film of the other photoelectric conversion element that is exposed by the irradiation of the beam and that is coupled to the first electrode film and that is located in the vicinity of the coupling. A third electrode film which is divided together with the semiconductor film by irradiation of an energy beam on the film, and a characteristic of the photovoltaic device of the present invention is that it is divided into a plurality of parts. An amorphous semiconductor film is used as a film having an opening partly formed on one electrode film, and is formed on the amorphous semiconductor film so as to also cover the opening part and is irradiated with an energy beam. The metal oxide film, the highly reflective metal film, and the second electrode film are formed as a laminated body divided by the amorphous semiconductor film by the method described above. But above Than first electrode film side lies in the high concentration towards the high reflective metal film side.

[0020]

In the integrated photovoltaic device of the present invention, the metal oxide film is arranged between the amorphous semiconductor film and the highly reflective metal film, and the processing with the energy beam is performed in such a laminated state. In the pattern end portions of the laminated portions left after processing, there is no phenomenon such as film peeling as in the conventional case.

This is because the metal oxide film has good adhesion to both the amorphous semiconductor film and the highly reflective metal film.

In the integrated photovoltaic device of the present invention, the amorphous semiconductor film that efficiently absorbs heat by an energy beam has a hydrogen content on the high reflection metal film side of the amorphous semiconductor film. A first underlayer of the amorphous semiconductor film
By making the number larger than that on the side of the electrode film, it is possible to favorably remove the laminated body made of the metal film formed on the amorphous semiconductor film during processing by the energy beam.

That is, on the side of the first electrode film of the amorphous semiconductor film, it acts so as to efficiently absorb the energy beam from the side of the substrate, while on the other hand, the high reflection of this amorphous semiconductor film is achieved. On the metal film side, the hydrogen content in the film is increased in order to increase the pressure when the amorphous semiconductor film is melted and evaporated by the heat due to the energy beam. Therefore, the evaporation of the amorphous semiconductor film makes it possible to effectively remove the metal film formed on the amorphous semiconductor film due to the explosive evaporation of hydrogen.

[0024]

1 is a sectional view of an element structure for explaining a method of manufacturing an integrated photovoltaic device according to the present invention. (1) in the figure
Is a transparent insulating substrate made of quartz or glass, (2a) (2b) ...
Is a first electrode film formed of a transparent conductive film having a film thickness of 3000Å to 5000Å such as indium tin oxide or tin oxide formed on the substrate (1), (3a) (3b) ... An amorphous semiconductor film for efficiently absorbing heat generated by an energy beam when manufacturing a photovoltaic device.
Amorphous silicon having a film thickness of 00Å to 1 μm was used. (4a), (4b) ... Are metal oxide films, which are the features of the integrated photovoltaic device of the present invention, and are composed of a silicide film of zinc oxide, platinum silicide, or the like, and further of indium tin oxide, tin oxide, or the like. (5a) (5b) ... is a highly reflective metal film such as silver that efficiently reflects incident light, (6a) (6b) ... is indium oxide,
A second electrode film made of tin oxide, zinc oxide, or the like that functions as a back electrode, and in this example, a film thickness of 500Å to 10000Å
Of silver film was used. (7a) (7b) ... is a semiconductor film made of a semiconductor material such as an amorphous semiconductor, and (8a) (8b) ... is made of a transparent conductive film having a film thickness of 500Å to 1000Å on the light incident side of the photovoltaic device. The third electrode film functions as a front electrode.
As the semiconductor films (7a) (7b) ..., specifically, a semiconductor made of amorphous silicon or the like is provided with a PIN junction parallel to the film surface, and the third electrode films (8a) (8b) ... The light incident from the semiconductor film is absorbed by the semiconductor films (7a), (7b), ... Then, the second electrode films (6a) (6b) and the third electrode films (8a), (8b) ...
It is taken out via. The second electrode film (6a) (6b)
... secure electrical connection with the lower first electrode films (2a) and (2b) through the opening (9).

The film forming conditions for the second electrode films (6a) (6b) ... And the semiconductor films (7a) (7b) ... in this example are shown in Tables 1 and 2.

[0026]

[Table 1]

[0027]

[Table 2]

Furthermore, the metal oxide film (4
Table 3 also shows a) (4b) ...

[0029]

[Table 3]

In the photovoltaic device of this example, the photoelectric conversion element (11
A plurality of a), (11b), ... Are formed on the surface of the substrate (1), and the photoelectric conversion elements adjacent to each other are electrically connected in series. That is, the photoelectric conversion element (11a) on the left side is the third electrode film of the photoelectric conversion element.
The second electrode film (6) of the other photoelectric conversion element (11b) on the right side of (8a)
By combining with the first electrode film (2b) electrically connected to b), an integrated photovoltaic device is constituted.

Further, the amorphous semiconductor film (3a) used in this example
Table 4 shows the conditions for forming (3b) ....

[0032]

[Table 4]

As shown in the table, the amorphous semiconductor film used in this example has a two-layer structure, and the lower layer is set to contain less hydrogen than the upper layer. In particular, the hydrogen content in the film is preferably 20% or less, and when it is more than 20%, the absorption by the energy beam cannot be satisfactorily performed. 15 in the embodiment
It became to be%.

On the other hand, the upper layer has a large hydrogen content in order to strongly perform the hydrogen gas ejecting the metal film formed on the upper layer during the patterning by the energy beam. In particular, the amount of hydrogen is preferably 20% or more.

Although the amorphous semiconductor film has a two-layer structure in this example, the present structure is not limited to this.
It is sufficient that at least the upper layer and the lower layer have the hydrogen content described above.

A method of manufacturing the integrated photovoltaic device of this embodiment will be described below with reference to the element structure diagram for each step shown in FIG. The reference numerals in the figure are the same as those in FIG.

In the first step shown in FIG. 2 (a), a plurality of first electrode films (2a) (2b) made of tin oxide film or the like are formed on one main surface of the translucent insulating substrate (1). Form over the area.

Next, in a second step shown in FIG. 3B, an amorphous semiconductor film made of amorphous silicon or the like is formed on the main surface so as to cover the first electrode films (2a) (2b). (3) and the metal oxide film (4) which is a feature of the present invention are sequentially laminated, and then the amorphous semiconductor film (3) located on the first electrode films (2a) (2b) ...
Then, an opening (9) is provided in a part of the laminated body composed of the metal oxide film (4).

The etching method for forming the opening (9) may be carried out by a conventionally known photolithographic technique, or may be removed by etching using an energy beam such as a laser beam. .

Then, in the third step shown in FIG. 3C, the highly reflective metal film (5) and the second electrode (6) are sequentially formed. By this step, although the second electrode film (6) has the amorphous semiconductor film (3) in the lower part, the first electrode film is electrically connected through the high reflection metal film (5) through the opening (9). (2a) (2b) ... will be connected.

In the fourth step shown in FIG. 3D, the first electrode film (2a) corresponding to the vicinity of the adjacent space between the photoelectric conversion elements is formed.
(2b) ... Above, the amorphous semiconductor film (3) and the metal oxide film (4)
And a highly reflective metal film (5) and a second electrode film on the laminated body composed of
(6) is formed into a laminated body, and the energy beam (EB) is irradiated from the other main surface side of the substrate (1) so as to irradiate at least the laminated portion. This allows
A part of each of the transparent conductive films (2a) (2b) ... Is exposed.

In this embodiment, the second harmonic wave (0.53 μm) of the YAG laser is set to 1 as this energy beam.
It was performed by irradiating with an intensity of × 10 ⁷ W / cm ² .

In the present invention, since the metal oxide film (3) is provided between the highly reflective metal film (4) and the second electrode film (6), the amorphous at the end of the pattern is formed. Good patterning can be performed without causing peeling on the contact surface between the high quality semiconductor film and the highly reflective metal film.

Next, in the fifth step shown in FIG. 5E, the semiconductor film (7) is formed over the entire main surface of the substrate (1), and the first electrode film (near the adjacent space) is formed. 2a) (2b)… The semiconductor film (7) above the energy beam (E.
Remove by irradiation of B.). By this removal, an opening (10) for connection with the first electrode films (2a) (2b) ... for forming the integrated structure described above is formed. As the irradiation condition of the energy beam in this step, the same laser and intensity as in the above-mentioned fourth step are used.

Next, in a sixth step shown in FIG. 6F, the third electrode film (8) which is a transparent conductive film on the light incident side is formed, and the first electrode film is formed in the vicinity of the opening (10). Electrode film (2a) (2b)
The upper part of the third electrode film (8) and the semiconductor film (7) that are stacked together is irradiated with an energy beam (EB) to divide them. As a result, the third electrode film is divided for each photoelectric conversion element ((8a) (8b) ...). This completes the integrated photovoltaic device.

FIG. 3 shows a second embodiment of the integrated photovoltaic device of the present invention.
FIG. 3 is an element structure diagram for explaining the example of FIG. The same reference numerals as those in FIG. 2 are given to the same reference numerals in the figure. This embodiment is characterized in that the integrated photovoltaic device according to the first embodiment has amorphous semiconductors (3a) (3b) ... and metal oxide films (4a) (4).
Although the openings (9) were provided in these two-layer laminates after the continuous formation of (b) ..., the amorphous semiconductor films (3a) (3b) in the integrated photovoltaic device of this example. ) ... After opening
(9) is provided, and then the metal oxide films (4a) (4b) ..., the highly reflective metal films (5a) (5b) ..., and the second electrode films (6a) (6b) ... are sequentially formed to form a laminated body. .

Therefore, in this embodiment, the opening (9)
Second electrode films (6a) (6b) ... and first electrode films (2a) (2b) ...
Since the metal oxide films (4a), (4b), etc. are electrically connected to, it is necessary that the material that can be used be indium tin oxide or a conductive material such as tin oxide.

In this second embodiment integrated photovoltaic device,
Metal oxide films (4a) (4b) ... and highly reflective metal films (5a) (5b) ... and the second
Since the electrode films (6a) (6b) can be continuously formed, there is an advantage that mass productivity for manufacturing is excellent and the film quality of the formed laminated films is always reproducible. .

Next, a third embodiment of the integrated photovoltaic device of the present invention will be described. FIG. 4 is a sectional view of the element structure of this third embodiment integrated photovoltaic device, and the same reference numerals as those in FIG. 3 are used. The feature of the integrated photovoltaic device of this example is that the amorphous semiconductor films (3a) (3b) ... and the metal oxide film (4a) are provided in the space adjacent to the first electrode films (2a) (2b). (4b) ..., the highly reflective metal films (5a) (5b) ... and the second electrode films (6a) (6b).

As a specific method of forming such an integrated photovoltaic device, the amorphous semiconductor film (3a) in the fourth step (FIG. 2D) of the integrated photovoltaic device of the first embodiment is used. ) (3b) ..., metal oxide films (4a) (4b) ..., highly reflective metal films (5a) (5b) ... and second
When removing the laminated body with the electrode films (6a) (6b) ..., only the laminated bodies on the first electrode films (2a) (2b) ... should be irradiated with the energy beam.

With such a structure, in the integrated photovoltaic device of the first embodiment, the adjacent photoelectric conversion elements (11
a) (11b) ... between the first electrode films (2a) (2b), (2b) (2c) ..., via the semiconductor films (7a) (7b). It becomes possible. In particular, the semiconductor films (7a), (7b) ... In the first embodiment are n-type or p-type conductive semiconductors as a layer on the side of the substrate in terms of structure, so the first electrodes connected by such semiconductors In the films (2a) (2b) ..., the leak current value is large.

That is, the first electrode film (2
Since the spaces a), (2b), (2b) (2c), ... Are generally filled with the amorphous semiconductor films (3a), (3b), ... You can

FIG. 5 shows a fourth embodiment of the integrated photovoltaic device of the present invention.
3 is a cross-sectional view of the element structure of the example of FIG. The feature of the integrated photovoltaic device of this example is that the same relationship as that of the first embodiment with respect to the third embodiment is provided between the second embodiment and the second embodiment. It has in. That is, the fourth embodiment is similar to the device structure of the second embodiment in that
Amorphous semiconductor films (3) are formed in the adjacent spaces between the first electrode films (2a) (2b).
a) (3b) ... and metal oxide films (4a) (4b) ... and highly reflective metal films (5a) (5
.. and the second electrode films (6a) (6b) ..

As a method of forming the same, as in the case of the above-mentioned third embodiment, the division in the above-mentioned laminated body is performed by the first electrode film.
By irradiating the energy beams only on (2a), (2b), ..., The divided parts are placed on the first electrode films (2a), (2b) ,. Thereby, the first electrode film (2a) (2
The adjacent space of b) ... will be filled with the laminate. An advantage of such an element structure is that the leak current between the adjacent photoelectric conversion elements can be reduced as in the third embodiment.

In this embodiment, an amorphous silicon film formed by the plasma CVD method is used as the amorphous semiconductor film, but the present invention is not limited to this. For example, the plasma CVD method is used. It may be an amorphous germanium film formed, an amorphous silicon film formed by the ECR plasma CVD method, or the like.

Further, in this embodiment, the amorphous semiconductor (3
The YAG laser second harmonic was used to remove the laminated body such as a) (3b) ... and the second electrode film (6a) (6b) .. However, the present invention is not limited to this, and an excimer laser or the like is used. It may be.

[0057]

In the integrated photovoltaic device of the present invention, a metal oxide film is arranged between the amorphous semiconductor film and the highly reflective metal film,
Since the processing is performed by the energy beam in such a laminated state, a phenomenon such as film peeling unlike the conventional case does not occur at the pattern end portions of those laminated portions left after the processing.

In the integrated photovoltaic device of the present invention, the amorphous semiconductor film that efficiently absorbs heat by an energy beam has a hydrogen content on the high antireflection film side of the amorphous semiconductor film. A first underlayer of the amorphous semiconductor film
By making the number larger than that on the electrode film side, it is possible to satisfactorily remove the laminated body of the metal films having the amorphous semiconductor film as the lower layer at the time of processing by the energy beam.

Further, according to the integrated photovoltaic device of the present invention, it is possible to fill the space between the first electrode films adjacent to each other with the laminate having the amorphous semiconductor film as the lowermost layer, and It is possible to suppress the generation of leak current between the photoelectric conversion elements adjacent to each other.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of an element structure of a first embodiment of an integrated photovoltaic device of the present invention.

FIG. 2 is a cross-sectional view of the element structure for each step showing the method for manufacturing the integrated photovoltaic device.

FIG. 3 is a sectional view of an element structure showing a second embodiment of the integrated photovoltaic device of the present invention.

FIG. 4 is a sectional view of an element structure showing a third embodiment of the integrated photovoltaic device of the present invention.

FIG. 5 is a cross-sectional view of an element structure showing a fourth embodiment of the integrated photovoltaic device of the present invention.

FIG. 6 is a cross-sectional view of an element structure of a conventional example integrated photovoltaic device.

FIG. 7 is a sectional view of an element structure for each step showing a method for manufacturing the integrated photovoltaic device.

[Explanation of symbols]

(1) ... Transparent insulating substrate (2a) (2b) ... First electrode film (3a) (3b) ... Amorphous semiconductor film (4a) (4b) ... Metal oxide film (5a) (5b) ... High Reflective metal film (6a) (6b) ... Second electrode film (7a) (7b) ... Semiconductor film (8a) (8b) ... Third electrode film

Claims (3)

[Claims] 1. A first electrode film, an amorphous semiconductor film, a metal oxide film, a highly reflective metal film, a second electrode film, a semiconductor film and a third electrode film in a plurality of regions on one main surface of a substrate. Are arranged in this order, and the photoelectric conversion elements are arranged in a divided manner, and the photoelectric conversion elements are adjacent to each other at an adjacent interval, and the third electrode film of one photoelectric conversion element and the first electrode of the other photoelectric conversion element are adjacent to each other. An integrated photovoltaic device in which a film is connected in series, wherein the first electrode film is divided into a plurality of parts, and the non-electrode is formed on the first electrode film and has an opening in a part thereof. The laminated body of the crystalline semiconductor film and the metal oxide film, and the laminated body which is formed on the laminated body so as to also cover the opening and is divided together with the laminated body by irradiation of an energy beam. A laminated body of the reflective metal film and the second electrode film, and one of the adjacent light beams. From the second electrode layer of the conversion element, together are stacked so as to extend to the first electrode film of the other photoelectric conversion element, a first of said other of the photoelectric conversion element
The semiconductor film divided by the irradiation of the energy beam on the electrode film and the photoelectric conversion element of the other photoelectric conversion element which is stacked on the semiconductor film and which is exposed by the irradiation of the energy beam in a continuous manner with the semiconductor film. The photoelectric conversion element extends to the first electrode film and is coupled with the first electrode film, and is split together with the semiconductor film by irradiation of an energy beam on the first electrode film of the other photoelectric conversion element located near the coupling. An integrated photovoltaic device comprising: 2. A first electrode film, an amorphous semiconductor film, a metal oxide film, a highly reflective metal film, a second electrode film, a semiconductor film and a third electrode film in a plurality of regions on one main surface of a substrate. Are arranged in this order, and the photoelectric conversion elements are arranged in a divided manner, and the photoelectric conversion elements are adjacent to each other at an adjacent interval, and the third electrode film of one photoelectric conversion element and the first electrode of the other photoelectric conversion element are adjacent to each other. An integrated photovoltaic device in which a film is connected in series, wherein the first electrode film is divided into a plurality of parts, and the amorphous is formed on the first electrode film and has an opening in a part thereof. Oxide film and the high-reflection film formed on the amorphous semiconductor film so as to cover the semiconductor film and the opening, and divided together with the amorphous semiconductor by irradiation with an energy beam. A laminated body of the metal film and the second electrode film, and From the second electrode layer of the photoelectric conversion elements, together are stacked so as to extend to the first electrode film of the other photoelectric conversion element, a first of said other of the photoelectric conversion element
The semiconductor film divided by the irradiation of the energy beam on the electrode film and the photoelectric conversion element of the other photoelectric conversion element which is stacked on the semiconductor film and which is exposed by the irradiation of the energy beam in a continuous manner with the semiconductor film. The photoelectric conversion element extends to the first electrode film and is coupled with the first electrode film, and is split together with the semiconductor film by irradiation of an energy beam on the first electrode film of the other photoelectric conversion element located near the coupling. Done third
An integrated photovoltaic device comprising: an electrode film. 3. The integrated photovoltaic device according to claim 1 or 2, wherein the amount of hydrogen contained in the amorphous semiconductor film is:
An integrated photovoltaic device, wherein the high-reflection metal film side has a higher concentration than the first electrode film side.