JPH0645525A - Manufacture of thin film resistance element - Google Patents
Manufacture of thin film resistance elementInfo
- Publication number
- JPH0645525A JPH0645525A JP19933892A JP19933892A JPH0645525A JP H0645525 A JPH0645525 A JP H0645525A JP 19933892 A JP19933892 A JP 19933892A JP 19933892 A JP19933892 A JP 19933892A JP H0645525 A JPH0645525 A JP H0645525A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- resist
- aluminum
- film
- resistive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 17
- 238000005530 etching Methods 0.000 abstract description 4
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- QKJXFFMKZPQALO-UHFFFAOYSA-N chromium;iron;methane;silicon Chemical compound C.[Si].[Cr].[Fe] QKJXFFMKZPQALO-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は薄膜抵抗素子の製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thin film resistance element.
【０００２】[0002]
【従来の技術】従来技術による薄膜抵抗素子の製造方法
を図２に示す断面図を用いて説明する。ここでは抵抗性
薄膜としてシリコンクロム薄膜、金属膜としてアルミを
用いている。2. Description of the Related Art A conventional method of manufacturing a thin film resistance element will be described with reference to a sectional view shown in FIG. Here, a silicon chrome thin film is used as the resistive thin film, and aluminum is used as the metal film.
【０００３】まず図２（ａ）に示すようにシリコン基板
１１上のシリコン酸化膜１２上に所定形状のシリコンク
ロム薄膜１３を形成する。次に図２（ｂ）に示すように
アルミ１５をその上に形成する。次に図２（ｃ）に示す
ようにレジスト１４を塗布，パターニングし、低抗体と
して働く部分の上のアルミをエッチング除去できるよう
に窓開けを行なう。次に図２（ｄ）に示すようにアルミ
をエッチングし、シリコンクロムによる薄膜抵抗を形成
する。この図２（ｄ）において、アルミ１５がシリコン
クロム１３の両端を覆っているがこの部分でアルミ１５
とシリコンクロム１３とのオーミック接触が形成され
る。First, as shown in FIG. 2A, a silicon chrome thin film 13 having a predetermined shape is formed on a silicon oxide film 12 on a silicon substrate 11. Next, as shown in FIG. 2B, aluminum 15 is formed thereon. Next, as shown in FIG. 2C, a resist 14 is applied and patterned, and a window is opened so that the aluminum on the portion which functions as the low antibody can be removed by etching. Next, as shown in FIG. 2D, aluminum is etched to form a thin film resistor made of silicon chrome. In FIG. 2 (d), the aluminum 15 covers both ends of the silicon chrome 13.
And an ohmic contact between the silicon chrome and the silicon chrome 13 is formed.
【０００４】[0004]
【発明が解決しようとする課題】この従来の薄膜抵抗素
子の製造方法では、電極となる部分のアルミとシリコン
クロムのオーミック接触が良好に形成されるように、図
２（ｂ）に示すアルミ１５を形成する前に弗化水素等の
希薄水溶液を用いて前処理を行なう。この前処理によっ
てシリコンクロム薄膜１３の表面が清浄にされるが、数
十オングストローム程度表面がエッチングされ膜厚が薄
くなる。このため、所定の抵抗値に対する絶対精度が悪
化する欠点があった。In this conventional method of manufacturing a thin film resistance element, aluminum 15 shown in FIG. 2 (b) is formed so that ohmic contact between aluminum and silicon chrome in a portion which will become an electrode is well formed. Before the formation, a pretreatment is performed using a dilute aqueous solution such as hydrogen fluoride. Although the surface of the silicon chrome thin film 13 is cleaned by this pretreatment, the surface is etched by about several tens of angstroms and the film thickness is reduced. Therefore, there is a drawback that the absolute accuracy with respect to a predetermined resistance value deteriorates.
【０００５】また図２（ｃ），（ｄ）におけるアルミ１
５のエッチング工程においてもアルミ１５のアンダーカ
ットが生じ、絶対精度が悪化するという欠点もあった。Aluminum 1 shown in FIGS. 2 (c) and 2 (d) is also used.
Also in the etching step of No. 5, undercut of the aluminum 15 occurs, and the absolute accuracy is deteriorated.
【０００６】[0006]
【課題を解決するための手段】本発明の特徴は、半導体
基板の一主表面上の絶縁膜の上に、所定形状にパターニ
ングされた抵抗性薄膜を形成する工程と、全面にレジス
トを塗布する工程と、前記レジストをパターニングして
前記抵抗性薄膜の抵抗として機能する抵抗部分上に選択
的に前記レジストを残余させ、前記抵抗性薄膜の金属膜
とオーミック接触する接続部分を露出させる工程と、全
面に金属膜を堆積する工程と、リフトオフ法により前記
抵抗性薄膜の接触部分に前記金属膜がオーミック接触し
た状態で前記残余したレジストと共にその上の前記金属
膜の部分を除去して前記抵抗性薄膜の抵抗部分を露出さ
せる工程とを有する薄膜抵抗素子の製造方法にある。A feature of the present invention is that a step of forming a resistive thin film patterned into a predetermined shape on an insulating film on one main surface of a semiconductor substrate and a resist is applied to the entire surface. A step of patterning the resist to selectively leave the resist on a resistance portion functioning as a resistance of the resistive thin film, and exposing a connection portion in ohmic contact with the metal film of the resistive thin film; A step of depositing a metal film on the entire surface, and removing the remaining resist together with the remaining resist in the state where the metal film is in ohmic contact with the contact part of the resistive thin film by a lift-off method to remove the resistance. And a step of exposing a resistive portion of the thin film.
【０００７】[0007]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例の薄膜抵抗素子の製造方法
を示す断面図である。まず図１（ａ）に示すようにシリ
コン基板１上のシリコン酸化膜２の上のシリコンクロム
薄膜を所望の形状にパターンニングしたシリコンクロム
薄膜３を形成する。次に、図１（ｂ）に示すようにシリ
コンクロム薄膜３のうち低抗体として働く部分上にレジ
スト４が残るようにレジストを塗布、パターンニングす
る。次にこの状態で弗化水素等の希薄水溶液で前処理を
行なう。次に図１（ｃ）に示すようにアルミ５を形成す
る。次に図１（ｄ）に示すようにソフトオフ法によっ
て、レジスト４と共にレジスト４上のアルミ５を除去す
る。The present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a method of manufacturing a thin film resistance element according to an embodiment of the present invention. First, as shown in FIG. 1A, a silicon chrome thin film 3 is formed by patterning a silicon chrome thin film on a silicon oxide film 2 on a silicon substrate 1 into a desired shape. Next, as shown in FIG. 1B, a resist is applied and patterned so that the resist 4 remains on the portion of the silicon chrome thin film 3 that functions as a low antibody. Next, in this state, pretreatment is performed with a dilute aqueous solution of hydrogen fluoride or the like. Next, aluminum 5 is formed as shown in FIG. Next, as shown in FIG. 1D, the aluminum 4 on the resist 4 is removed together with the resist 4 by the soft-off method.
【０００８】本実施例では、シリコンクロム薄膜３のう
ちアルミ５とオーミック接触が形成される部分のみが、
前記前処理液にさらされ、低抗体として働く主要部分
は、レジスト４に覆れているため、前処理によってシリ
コンクロム薄膜３の膜厚が減少することはなく絶対精度
の良い抵抗素子を形成することができる。また、アルミ
エッチングによるアルミのアンダーカットがないため、
この点でも絶対精度が良いものとなる。In this embodiment, only the portion of the silicon chrome thin film 3 where ohmic contact with the aluminum 5 is formed,
Since the main part exposed to the pretreatment liquid and acting as a low antibody is covered with the resist 4, the film thickness of the silicon chrome thin film 3 is not reduced by the pretreatment, and a resistance element with high absolute accuracy is formed. be able to. Also, because there is no aluminum undercut due to aluminum etching,
Also in this respect, the absolute accuracy is good.
【０００９】[0009]
【発明の効果】以上説明したように本発明は、薄膜抵抗
素子において金属配線および金属電極の形成方法として
リフトオフ法を採用することにより、薄膜抵抗の抵抗値
の絶対精度が良くなるという効果を生ずる。具体的に
は、通常抵抗性薄膜としては、加工精度を上げるため１
００〜２００オングストロームの膜厚のものが使用され
るが、従来技術で前処理において５０オングストローム
程度膜厚が減少したとすると従来技術では抵抗値が２倍
〜１．３倍に上昇してしまいまたこの際の膜厚減少分の
制御が困難であるため、結果的には、抵抗値の絶対精度
が悪くなるが、本発明ではこのような不都合が発生しな
いという効果を有する。As described above, according to the present invention, by adopting the lift-off method as a method of forming a metal wiring and a metal electrode in a thin film resistance element, there is an effect that the absolute accuracy of the resistance value of the thin film resistance is improved. . Specifically, as a normal resistive thin film, 1
A film having a film thickness of 00 to 200 angstrom is used, but if the film thickness is reduced by about 50 angstrom in the prior art in the prior art, the resistance value increases to 2 to 1.3 times in the prior art. At this time, it is difficult to control the amount of decrease in the film thickness, and as a result, the absolute accuracy of the resistance value deteriorates, but the present invention has an effect that such an inconvenience does not occur.
【図１】本発明の一実施例の製造方法を工程順に示した
断面図である。FIG. 1 is a cross-sectional view showing a method of manufacturing an embodiment of the present invention in the order of steps.
【図２】従来技術の製造方法を工程順に示した断面図で
ある。2A to 2D are cross-sectional views showing a manufacturing method of a conventional technique in the order of steps.
１，１１ シリコン基板 ２，１２ シリコン酸化膜 ３，１３ シリコンクロム薄膜 ４，１４ レジスト ５，１５ アルミ 1,11 Silicon substrate 2,12 Silicon oxide film 3,13 Silicon chrome thin film 4,14 Resist 5,15 Aluminum
Claims (1)
に、所定形状にパターニングされた抵抗性薄膜を形成す
る工程と、全面にレジストを塗布する工程と、前記レジ
ストをパターニングして前記抵抗性薄膜の抵抗として機
能する抵抗部分上に選択的に前記レジストを残余させ、
前記抵抗性薄膜の金属膜とオーミック接触する接続部分
を露出させる工程と、全面に金属膜を堆積する工程と、
リフトオフ法により前記抵抗性薄膜の接続部分に前記金
属膜がオーミック接触した状態で前記残余したレジスト
と共にその上の前記金属膜の部分を除去して前記抵抗性
薄膜の抵抗部分を露出させる工程とを有することを特徴
とする薄膜抵抗素子の製造方法。1. A step of forming a resistive thin film patterned into a predetermined shape on an insulating film on one main surface of a semiconductor substrate, a step of applying a resist on the entire surface, and a step of patterning the resist to form the resistive thin film. Selectively leaving the resist on the resistance portion functioning as the resistance of the resistive thin film,
Exposing a connection portion in ohmic contact with the metal film of the resistive thin film; depositing a metal film on the entire surface;
And a step of removing a portion of the metal film on the residual resist together with the remaining resist in a state where the metal film is in ohmic contact with a connection portion of the resistive thin film by a lift-off method to expose a resistive portion of the resistive thin film. A method of manufacturing a thin film resistance element, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19933892A JPH0645525A (en) | 1992-07-27 | 1992-07-27 | Manufacture of thin film resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19933892A JPH0645525A (en) | 1992-07-27 | 1992-07-27 | Manufacture of thin film resistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0645525A true JPH0645525A (en) | 1994-02-18 |
Family
ID=16406131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19933892A Withdrawn JPH0645525A (en) | 1992-07-27 | 1992-07-27 | Manufacture of thin film resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0645525A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU680778B2 (en) * | 1994-08-25 | 1997-08-07 | Kureha Chemical Industry Co., Ltd. | Binding agent for growth factor |
-
1992
- 1992-07-27 JP JP19933892A patent/JPH0645525A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU680778B2 (en) * | 1994-08-25 | 1997-08-07 | Kureha Chemical Industry Co., Ltd. | Binding agent for growth factor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19991005 |