JPH06333906A - Ultrasonic cleaning device - Google Patents
Ultrasonic cleaning deviceInfo
- Publication number
- JPH06333906A JPH06333906A JP14431793A JP14431793A JPH06333906A JP H06333906 A JPH06333906 A JP H06333906A JP 14431793 A JP14431793 A JP 14431793A JP 14431793 A JP14431793 A JP 14431793A JP H06333906 A JPH06333906 A JP H06333906A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- vibrator
- tank
- ultrasonic
- cleaning tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004506 ultrasonic cleaning Methods 0.000 title claims description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 58
- 239000007788 liquid Substances 0.000 claims abstract description 24
- 239000002245 particle Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 239000000126 substance Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウェーハの洗浄
などに使用される超音波洗浄装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ultrasonic cleaning device used for cleaning semiconductor wafers.
【０００２】[0002]
【従来の技術】半導体製造プロセスにおける洗浄工程で
は、半導体ウェーハの表面に付着した粒子、有機物、金
属不純物などの汚れを除去するために、超音波洗浄装置
が用いられている。従来の超音波洗浄装置は、図３に示
すように、底部１ａに振動子２が取り付けられた筺形の
洗浄槽１によって構成されていた。この超音波洗浄装置
によると、洗浄槽１内に充填された洗浄液中に半導体ウ
ェーハを浸漬し、振動子２で発生した超音波振動を洗浄
液に伝え、この振動によって半導体ウェーハの表面を洗
浄することができる。ここで、洗浄液中に伝わった超音
波振動は、洗浄液の液面で反射して共振状態を形成す
る。したがって、洗浄槽内には一定の定在波ａが生じて
いる。2. Description of the Related Art In a cleaning process in a semiconductor manufacturing process, an ultrasonic cleaning apparatus is used to remove contaminants such as particles, organic substances and metal impurities attached to the surface of a semiconductor wafer. As shown in FIG. 3, the conventional ultrasonic cleaning apparatus is composed of a box-shaped cleaning tank 1 in which a vibrator 2 is attached to a bottom portion 1a. According to this ultrasonic cleaning device, the semiconductor wafer is immersed in the cleaning liquid filled in the cleaning tank 1, the ultrasonic vibration generated by the vibrator 2 is transmitted to the cleaning liquid, and the surface of the semiconductor wafer is cleaned by this vibration. You can Here, the ultrasonic vibration transmitted in the cleaning liquid is reflected by the liquid surface of the cleaning liquid to form a resonance state. Therefore, a constant standing wave a is generated in the cleaning tank.
【０００３】[0003]
【発明が解決しようとする課題】上述した従来の超音波
洗浄装置は、液面が超音波振動の反射面であったが、こ
の液面は洗浄作業中ほぼ一定の位置となっている。した
がって、洗浄槽内に生じた定在波の波長は一定であるた
め、洗浄液中でのキャビテーションｃの発生位置も常に
一定となる。その結果、洗浄槽内に設置されているヒー
タなどの治具が常に同じ状態でキャビテーションを受
け、これがパーティクル（微粒子）発生の原因となり、
洗浄むらを引き起こしていた。本発明は、このような従
来技術の課題を解決するためになされたもので、キャビ
テーションの発生位置を変化させることによりパーティ
クルの発生を抑止し、被洗浄物の洗浄むらを低減できる
超音波洗浄装置の提供を目的とする。In the above-mentioned conventional ultrasonic cleaning device, the liquid surface is the reflection surface of ultrasonic vibration, but this liquid surface is at a substantially constant position during the cleaning operation. Therefore, since the wavelength of the standing wave generated in the cleaning tank is constant, the position where cavitation c is generated in the cleaning liquid is always constant. As a result, jigs such as heaters installed in the cleaning tank are always subjected to cavitation in the same state, which causes the generation of particles (fine particles),
It caused uneven cleaning. The present invention has been made in order to solve the problems of the related art, and an ultrasonic cleaning apparatus capable of suppressing the generation of particles by changing the generation position of cavitation and reducing uneven cleaning of the object to be cleaned. For the purpose of providing.
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するため
に、本発明の超音波洗浄装置は、洗浄槽と、この洗浄槽
の底部に設けられた振動子と、前記振動子に対向して設
けられ、前記洗浄槽内の洗浄液中で前記振動子に接近ま
たは離間する方向へ移動する反射板とを備えている。In order to achieve the above object, an ultrasonic cleaning apparatus of the present invention comprises a cleaning tank, a vibrator provided at the bottom of the cleaning tank, and a vibrator facing the vibrator. And a reflection plate that moves in the cleaning liquid in the cleaning tank toward or away from the vibrator.
【０００５】[0005]
【作用】本発明の超音波洗浄装置では、振動子から発射
した超音波振動は、洗浄液中に設けられた反射板で反射
を繰り返す。この反射板は振動子に接近または離間する
方向へ移動するため、その移動にともない反射板と振動
子の間の距離が変化する。したがって、この間に形成さ
れる定在波の波長が変わるため、キャビテーションの発
生位置を変化させることができる。In the ultrasonic cleaning apparatus of the present invention, the ultrasonic vibration emitted from the vibrator is repeatedly reflected by the reflecting plate provided in the cleaning liquid. Since the reflector moves toward or away from the oscillator, the distance between the reflector and the oscillator changes with the movement. Therefore, since the wavelength of the standing wave formed during this period changes, the position where cavitation occurs can be changed.
【０００６】[0006]
【実施例】以下、本発明の一実施例について図面を参照
して説明する。図１は本発明の実施例に係る超音波洗浄
装置を示す断面正面図である。この超音波洗浄装置は、
筺形の洗浄槽１、振動子２、反射板３によって主要部分
が構成されている。洗浄槽１の上部は開口しており、こ
の開口部１ｂからバスケット４に装着された半導体ウェ
ーハ５が挿入される。洗浄槽１の内底部付近には、加熱
用のヒータ６が設置されており、洗浄槽１内に充填され
る洗浄液を所望の温度に調節できるようになっている。
振動子２は、洗浄槽１の底部１ａに固定して設けられて
おり、所定振動数の超音波を発生する。振動子２の超音
波発射面２ａは洗浄槽１内に充填される洗浄液と接触
し、超音波振動を洗浄液中に伝える。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional front view showing an ultrasonic cleaning device according to an embodiment of the present invention. This ultrasonic cleaning device
The casing-shaped cleaning tank 1, the vibrator 2, and the reflection plate 3 constitute a main part. The upper portion of the cleaning tank 1 is open, and the semiconductor wafer 5 mounted on the basket 4 is inserted through the opening 1b. A heater 6 for heating is installed near the inner bottom of the cleaning tank 1 so that the cleaning liquid filled in the cleaning tank 1 can be adjusted to a desired temperature.
The vibrator 2 is fixedly provided on the bottom portion 1a of the cleaning tank 1 and generates an ultrasonic wave having a predetermined frequency. The ultrasonic wave emitting surface 2a of the vibrator 2 comes into contact with the cleaning liquid filled in the cleaning tank 1 and transmits ultrasonic vibrations into the cleaning liquid.
【０００７】反射板３は、少なくとも反射面３ａが超音
波振動を反射する材料（例えば、石英ガラス）で構成さ
れており、振動子２の超音波発射面２ａに対向して洗浄
槽１内の洗浄液中に配置される。ここで、反射板３の反
射面３ａは、振動子２の超音波発射面２ａに対してわず
かな傾きを設けておくことが好ましい。このように傾き
を設けることにより、部分的なキャビテーションの発生
を防止し、特定の部位に強度が集中することを防止する
ことができる。反射板３の上面中央部には駆動ロッド７
が取り付けてあり、カム装置などの駆動装置（図示せ
ず）と連結している。この駆動装置の駆動力によって、
反射板３は振動子２に対して接近または離間する方向へ
往復運動する。なお、往復運動が洗浄槽１内に充填され
た洗浄液中で行われるように、反射板３の移動距離を設
定しておく。この移動距離は、洗浄液中に生じる定在波
の最大波長の１／２程度で十分である。At least the reflecting surface 3a of the reflecting plate 3 is made of a material (for example, quartz glass) that reflects ultrasonic vibrations, and the inside of the cleaning tank 1 faces the ultrasonic wave emitting surface 2a of the vibrator 2. Placed in the wash solution. Here, it is preferable that the reflecting surface 3a of the reflecting plate 3 be slightly inclined with respect to the ultrasonic wave emitting surface 2a of the transducer 2. By providing such an inclination, it is possible to prevent the occurrence of partial cavitation and prevent the concentration of strength on a specific part. The drive rod 7 is provided at the center of the upper surface of the reflector 3.
Is attached and is connected to a drive device (not shown) such as a cam device. By the driving force of this drive device,
The reflector 3 reciprocates in a direction toward or away from the oscillator 2. The moving distance of the reflecting plate 3 is set so that the reciprocating motion is performed in the cleaning liquid filled in the cleaning tank 1. It is sufficient that the moving distance is about 1/2 of the maximum wavelength of the standing wave generated in the cleaning liquid.
【０００８】次に、上述した超音波洗浄装置の作用を説
明する。洗浄槽１内には、あらかじめ純水または薬液等
の洗浄液を上端近くまで充填しておく。次いで、バスケ
ット４に装着した半導体ウェーハ５を洗浄槽１内に挿入
し、振動子２を作動させる。振動子２で発生した超音波
振動は、超音波発射面２ａから洗浄槽１内の洗浄液中に
伝わり、半導体ウェーハ５の表面に付着していた粒子、
有機物、金属不純物等の汚れを除去する。Next, the operation of the above ultrasonic cleaning device will be described. The cleaning tank 1 is previously filled with a cleaning liquid such as pure water or a chemical liquid up to near the upper end. Next, the semiconductor wafer 5 mounted on the basket 4 is inserted into the cleaning tank 1 and the vibrator 2 is operated. The ultrasonic vibration generated by the vibrator 2 is transmitted from the ultrasonic wave emission surface 2a into the cleaning liquid in the cleaning tank 1, and the particles adhered to the surface of the semiconductor wafer 5 are
Removes dirt such as organic substances and metallic impurities.
【０００９】振動子２から発射された超音波振動は、反
射板３と超音波発射面２ａとの間で反射を繰り返し、洗
浄液中で共振状態を形成する。このため洗浄槽１内に
は、図２に示すように一定の定在波ａが生じる。この定
在波ａの波長は、振動子２の励振周波数と、反射板３と
超音波発射面２ａとの間の距離によって決まる。洗浄作
業中、反射板３は図示しない駆動装置によって洗浄液中
を往復運動しており、振動子２に対して接近、離間を繰
り返す。このため、洗浄液中の定在波の波長が変わり
（図２のａ，ｂ参照）、それにともないキャビテーショ
ンｃの発生位置も変化する。ゆえに、洗浄槽１内に設け
られたヒータ６等の治具がキャビテーションを受ける位
置にも変化が生じ、その結果、パーティクルの発生が抑
止される。なお、本発明は上述した実施例に限定される
ものではなく、要旨を変更しない範囲で種々の変形また
は応用が可能である。例えば、半導体ウェーハを装着し
たバスケットを洗浄槽内で上下に移動させれば、半導体
ウェーハに対するキャビテーションの作用位置も変化さ
せることができ、一層効果的に洗浄むらを防止すること
ができる。The ultrasonic vibrations emitted from the vibrator 2 are repeatedly reflected between the reflection plate 3 and the ultrasonic wave emission surface 2a to form a resonance state in the cleaning liquid. Therefore, a constant standing wave a is generated in the cleaning tank 1 as shown in FIG. The wavelength of the standing wave a is determined by the excitation frequency of the vibrator 2 and the distance between the reflector 3 and the ultrasonic wave emitting surface 2a. During the cleaning operation, the reflection plate 3 reciprocates in the cleaning liquid by a driving device (not shown), and repeatedly approaches and separates from the vibrator 2. Therefore, the wavelength of the standing wave in the cleaning liquid changes (see a and b in FIG. 2), and the position where cavitation c occurs is also changed accordingly. Therefore, the position where the jig such as the heater 6 provided in the cleaning tank 1 receives cavitation also changes, and as a result, the generation of particles is suppressed. It should be noted that the present invention is not limited to the above-described embodiments, and various modifications or applications can be made without changing the gist. For example, if the basket on which the semiconductor wafer is mounted is moved up and down in the cleaning tank, the position where cavitation acts on the semiconductor wafer can be changed, and cleaning unevenness can be prevented more effectively.
【００１０】[0010]
【発明の効果】以上説明したように、本発明の超音波洗
浄装置によれば、超音波振動の反射板を洗浄液内で移動
させることにより、キャビテーションの発生位置を変化
させることができ、その結果、パーティクルの発生を抑
止し、被洗浄物の洗浄むらを低減できるAs described above, according to the ultrasonic cleaning apparatus of the present invention, the position where cavitation is generated can be changed by moving the ultrasonic vibration reflecting plate in the cleaning liquid. As a result, It is possible to suppress the generation of particles and reduce uneven cleaning of the object to be cleaned.
【図１】本発明の実施例に係る超音波洗浄装置を示す断
面正面図である。FIG. 1 is a sectional front view showing an ultrasonic cleaning device according to an embodiment of the present invention.
【図２】同装置の洗浄槽内に発生する定在波の変化を示
す断面正面図である。FIG. 2 is a sectional front view showing a change in a standing wave generated in a cleaning tank of the apparatus.
【図３】従来技術を示す断面正面図である。FIG. 3 is a sectional front view showing a conventional technique.
１ 洗浄槽 ２ 振動子 ３ 反射板 ５ 半導体ウェーハ 1 Cleaning Tank 2 Transducer 3 Reflector 5 Semiconductor Wafer
Claims (1)
た振動子と、前記振動子に対向して設けられ、前記洗浄
槽内の洗浄液中で前記振動子に接近または離間する方向
へ移動する反射板とを備えたことを特徴とする超音波洗
浄装置。1. A cleaning tank, a vibrator provided at the bottom of the cleaning tank, a vibrator provided in opposition to the vibrator, and moving toward or away from the vibrator in a cleaning liquid in the cleaning tank. An ultrasonic cleaning device comprising a moving reflecting plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14431793A JPH06333906A (en) | 1993-05-24 | 1993-05-24 | Ultrasonic cleaning device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14431793A JPH06333906A (en) | 1993-05-24 | 1993-05-24 | Ultrasonic cleaning device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06333906A true JPH06333906A (en) | 1994-12-02 |
Family
ID=15359281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14431793A Pending JPH06333906A (en) | 1993-05-24 | 1993-05-24 | Ultrasonic cleaning device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06333906A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007125516A (en) * | 2005-11-07 | 2007-05-24 | Denso Corp | Ultrasonic cleaning method and ultrasonic cleaning apparatus |
| CN102513305A (en) * | 2011-12-30 | 2012-06-27 | 上海集成电路研发中心有限公司 | Device and method for cleaning semiconductor silicon wafer |
| US8685168B2 (en) | 2008-06-06 | 2014-04-01 | Industrial Technology Research Institute | Method for removing micro-debris and device of the same |
-
1993
- 1993-05-24 JP JP14431793A patent/JPH06333906A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007125516A (en) * | 2005-11-07 | 2007-05-24 | Denso Corp | Ultrasonic cleaning method and ultrasonic cleaning apparatus |
| US7757701B2 (en) | 2005-11-07 | 2010-07-20 | Denso Corporation | Ultrasonic cleaning method and device |
| US8685168B2 (en) | 2008-06-06 | 2014-04-01 | Industrial Technology Research Institute | Method for removing micro-debris and device of the same |
| CN102513305A (en) * | 2011-12-30 | 2012-06-27 | 上海集成电路研发中心有限公司 | Device and method for cleaning semiconductor silicon wafer |
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