JPH0627651Y2 - Film forming reactor - Google Patents
Film forming reactorInfo
- Publication number
- JPH0627651Y2 JPH0627651Y2 JP12338189U JP12338189U JPH0627651Y2 JP H0627651 Y2 JPH0627651 Y2 JP H0627651Y2 JP 12338189 U JP12338189 U JP 12338189U JP 12338189 U JP12338189 U JP 12338189U JP H0627651 Y2 JPH0627651 Y2 JP H0627651Y2
- Authority
- JP
- Japan
- Prior art keywords
- shutter
- reaction chamber
- substrate
- inlet
- outlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【考案の詳細な説明】 （イ）産業上の利用分野 本考案は、アモルファス半導体などの薄膜をプラズマＣ
ＶＤ法を用いて形成するための膜形成用反応装置に関す
る。[Detailed Description of the Invention] (a) Field of Industrial Application The present invention uses a thin film such as an amorphous semiconductor to form a plasma C
The present invention relates to a film forming reactor for forming by using a VD method.
（ロ）従来の技術 従来、アモルファス半導体の薄膜はＣＶＤ装置を用いて
形成される。その形成装置としては、特開昭５６−１１
４３８７号公報によれば、ガス導入口、排気口及び基板
出入口を有する反応室があり、その反応室内には基板を
保持する基板保持台とプラズマ放電を生成する放電電極
とが対向して位置している。さらに、反応室内を所定の
圧力に保ったり、又、反応室外からの不純物混入防止の
ためにＯリングを取り付けたシャッタで反応室外壁面の
基板出入口をふさいでいる。(B) Conventional Technology Conventionally, a thin film of an amorphous semiconductor is formed by using a CVD apparatus. As a forming device thereof, Japanese Patent Application Laid-Open No. 56-11
According to Japanese Patent No. 4387, there is a reaction chamber having a gas inlet, an exhaust port, and a substrate inlet / outlet, and a substrate holder for holding a substrate and a discharge electrode for generating plasma discharge are opposed to each other in the reaction chamber. ing. Further, the inside and outside of the reaction chamber is covered with a shutter with an O-ring attached to keep the reaction chamber at a predetermined pressure or to prevent impurities from entering the reaction chamber.
（ハ）考案が解決しようとする課題 薄膜層を基板上に形成する反応時に、反応室内壁等、基
板外にも粉末状の反応生成物（フレーク）が付着するこ
とが知られているが、このフレークは基板出し入れ時の
シャッタ開閉に際して、シャッタに取り付けられている
Ｏリングと反応室外壁面との接触部分にまで入り込むこ
とが多い。そして、反応後に基板を取り出し、新しく基
板を挿入して反応を行う時、前記接触部分にまで入り込
んだフレークを取り除かない状態でシャッタを締める
と、シャッタのＯリングと反応室外壁面との間にわずか
ながらも隙間が生じ、シャッタ−リ−クという現象がお
きる。このようなシャッタ−リ−クによって反応室内を
所定の圧力に保ったり反応室外からの不純物混入の防止
ができなくなれば、形成後の薄膜特性に多大な影響を与
えることになる。(C) Problems to be solved by the invention It is known that powdery reaction products (flakes) adhere to the outside of the substrate such as the inner wall of the reaction chamber during the reaction for forming the thin film layer on the substrate. When opening and closing the shutter when the substrate is taken in and out, the flakes often enter even the contact portion between the O-ring attached to the shutter and the outer wall surface of the reaction chamber. Then, after the reaction, the substrate is taken out, and when a new substrate is inserted and the reaction is performed, if the shutter is closed without removing the flakes that have penetrated to the contact part, there is a slight gap between the O-ring of the shutter and the outer wall surface of the reaction chamber. However, a gap is generated and a phenomenon called shutter leak occurs. If it becomes impossible to maintain a predetermined pressure in the reaction chamber or prevent impurities from entering from the outside of the reaction chamber by such a shutter leak, the characteristics of the thin film after formation will be greatly affected.
よって、本考案の目的はシャッターリークを起こさせ
ず、反応時の反応室内所定圧力を保持したり、又、反応
室外からの不純物混入を防止し、所望の薄膜を得ること
である。Therefore, an object of the present invention is to prevent a shutter leak, maintain a predetermined pressure in the reaction chamber at the time of reaction, and prevent impurities from entering from outside the reaction chamber to obtain a desired thin film.
（ニ）課題を解決するための手段 本膜形成用反応装置は、ガス導入口、排気口及び基板出
入口を有する反応室、前記反応室内に設けられた放電電
極、前記反応室の基板出入口に設けられ、出入口を開閉
するシャッタ、前記シャッタの開閉作動範囲内に設けら
れ、シャッタの開閉動作時にシャッタの出入口側の面を
クリーニングするシャッタークリーナ、を備えたことを
特徴とする。(D) Means for Solving the Problems The present film forming reaction device is provided with a reaction chamber having a gas inlet, an exhaust port, and a substrate inlet / outlet, a discharge electrode provided in the reaction chamber, and a substrate inlet / outlet of the reaction chamber. A shutter for opening and closing the entrance and exit, and a shutter cleaner provided in the opening and closing operation range of the shutter for cleaning the surface on the entrance and exit side of the shutter during the opening and closing operation of the shutter.
（ホ）作用 反応室内で反応と同時に発生したフレークがシャッタの
開閉動作時に、シャッタのＯリングと反応室外壁面との
接触部分にまで入り込んでしまう。そこで反応室外壁面
のシャッタ作動範囲内に取り付けたシャッタ−クリーナ
でシャッタの出入口側の面に付着したフレークを反応前
・後に開閉するシャッタ動作時に取り除く。(E) Action Flakes generated at the same time as the reaction in the reaction chamber enter the contact portion between the O-ring of the shutter and the outer wall surface of the reaction chamber when the shutter is opened and closed. Therefore, flakes adhering to the inlet / outlet side surface of the shutter are removed by a shutter cleaner attached within the shutter operation range on the outer wall surface of the reaction chamber during the shutter operation for opening / closing before and after the reaction.
（ヘ）実施例 第１図は本考案の一実施例である膜形成用反応装置の垂
直断面図、第２図はその反応装置のシャッタ系の拡大図
である。(F) Embodiment FIG. 1 is a vertical sectional view of a film forming reaction apparatus according to an embodiment of the present invention, and FIG. 2 is an enlarged view of a shutter system of the reaction apparatus.
１は基板に薄膜を形成するための反応室、２は薄膜の原
料となる原料ガスを反応室１内に導入するガス導入口、
３は反応後の反応室１内を排気するための排気口、４は
プラズマ放電をさせるための放電電極、５は所望の薄膜
が形成される基板、６は基板５を保持する基板保持台で
ある。放電電極４と基板５は対向して反応室１内に位置
する。７は反応室１内への基板５の出し入れのための基
板出入口で、反応室１の側面に設けられ、形状は第１図
の紙面において垂直方向に長辺を持つ長方形である。８
は反応室１の基板出入口７をふさぎ上下方向に移動可能
なシャッタ、９は反応室１内の気密性を良くするため
に、基板出入口７を囲むようにシャッタ８の出入口側の
面８ａに取り付けてあるＯリング、１０はシャッタ８の
背面側で、これと対向するシャッタ補助プレートでる。
１１、１１はシャッタ８とシャッタ補助プレート１０と
を連結している連結部材で、これらの相互連結により可
動な平行四辺形からなるリンク機構を構成している。従
って、シャッタ８と補助プレ−ト１０とは互いに平行移
動的に接離可能である。そして、連結部材１１、１１が
ほぼ水平状態にあるとき、シャッタ８は反応室１外壁面
にＯリング９を介して圧接するべく、連結部材１１、１
１の長さが決められている。Reference numeral 1 is a reaction chamber for forming a thin film on a substrate, 2 is a gas inlet for introducing a raw material gas, which is a raw material of the thin film, into the reaction chamber 1,
3 is an exhaust port for exhausting the inside of the reaction chamber 1 after reaction, 4 is a discharge electrode for plasma discharge, 5 is a substrate on which a desired thin film is formed, and 6 is a substrate holder for holding the substrate 5. is there. The discharge electrode 4 and the substrate 5 face each other in the reaction chamber 1. Reference numeral 7 denotes a substrate inlet / outlet for loading / unloading the substrate 5 into / from the reaction chamber 1, which is provided on the side surface of the reaction chamber 1 and has a rectangular shape having a long side in the vertical direction on the paper surface of FIG. 8
Is a shutter that closes the substrate inlet / outlet 7 of the reaction chamber 1 and is movable in the vertical direction, and 9 is attached to the inlet / outlet side surface 8a of the shutter 8 so as to surround the substrate inlet / outlet 7 in order to improve the airtightness in the reaction chamber 1. The O-rings 10 provided on the rear side of the shutter 8 are shutter auxiliary plates facing the rear side.
Reference numerals 11 and 11 denote connecting members that connect the shutter 8 and the shutter auxiliary plate 10, and by connecting these members to each other, a link mechanism composed of a movable parallelogram is formed. Therefore, the shutter 8 and the auxiliary plate 10 can be moved in parallel with each other and separated from each other. When the connecting members 11, 11 are in a substantially horizontal state, the shutter 8 is pressed against the outer wall surface of the reaction chamber 1 via the O-ring 9, so that the connecting members 11, 1 are in contact with each other.
The length of 1 is fixed.
１２はシャッタ８の開閉時に使用する操作棒でシャッタ
補助プレート１０の下辺に垂下固着されて、その上下動
操作によりシャッタ８を上下移動せしめる。即ち、第１
図では操作棒１２の上限位置を示し、このとき、シャッ
タ８は前記リンク機構の作用（後述）により基板出入口
７を閉じる状態にあり、一方第２図では操作棒１２の下
限位置を示し、この時シャッタ８は基板出入口７を開放
する状態にある。１３、１３はシャッタ８とシャッタ補
助プレート１０との対向面に夫々取り付けられたばね取
り付け金具、１４はばね取り付け金具１３、１３間に張
設されたばねである。第２図に示すごとく、操作棒１２
が下限位置に固定されているとき、ばね１４はほぼ自然
長を維持し、シャッタ８を押し上げるばね力を有してい
る。従って、斯る状態にて、連結部材１１、１１は傾斜
状態となり、シャッタ８及びＯリング９は反応室１外壁
面より若干離れる。１５は基板出入口７の上側に取り付
けられ、シャッタ８の上限位置を規制するためのシャッ
タストッパであり、シャッタ８のシャッタストッパ１５
への当接時、シャッタ８に取り付けたＯリング９は基板
出入口７を囲む配置となる。Reference numeral 12 denotes an operation rod used when opening and closing the shutter 8, which is fixed to the lower side of the shutter auxiliary plate 10 so as to vertically move the shutter 8 by its vertical movement operation. That is, the first
In the figure, the upper limit position of the operating rod 12 is shown, and at this time, the shutter 8 is in a state of closing the substrate entrance / exit 7 by the action of the link mechanism (described later), while in FIG. 2 the lower limit position of the operating rod 12 is shown. The shutter 8 is in a state of opening the substrate entrance / exit 7. Reference numerals 13 and 13 denote spring fittings attached to the facing surfaces of the shutter 8 and the shutter auxiliary plate 10, respectively, and 14 denotes a spring stretched between the spring fittings 13 and 13. As shown in FIG. 2, the operating rod 12
Is fixed to the lower limit position, the spring 14 maintains a substantially natural length and has a spring force to push up the shutter 8. Therefore, in such a state, the connecting members 11 and 11 are inclined, and the shutter 8 and the O-ring 9 are slightly separated from the outer wall surface of the reaction chamber 1. Reference numeral 15 denotes a shutter stopper attached to the upper side of the substrate entrance / exit 7 for restricting the upper limit position of the shutter 8.
The O-ring 9 attached to the shutter 8 is arranged so as to surround the substrate entrance / exit 7 when abutting against the substrate.
斯る配置にて、シャッタ８が基板出入口７を閉じるには
反応室１外壁面方向に移動しなければならないが、この
時前記リンク機構が作用する。即ち、操作棒１２の上動
により、シャッタ８がシャッタストッパ１５に当接した
後、ばね１４の伸長力に抗して、なおも操作棒１２を上
動させると、連結部材１１、１１が水平状態に近づき、
それに従ってシャッタ８が反応室１外壁面に接近し、や
がてＯリング９が反応室１に密着する。In such an arrangement, the shutter 8 must move toward the outer wall surface of the reaction chamber 1 in order to close the substrate entrance / exit 7. At this time, the link mechanism operates. That is, when the operation rod 12 is moved upward, the shutter 8 comes into contact with the shutter stopper 15, and then the operation rod 12 is still moved upward against the extension force of the spring 14, so that the connecting members 11 and 11 become horizontal. Approaching the state,
Accordingly, the shutter 8 approaches the outer wall surface of the reaction chamber 1, and eventually the O-ring 9 comes into close contact with the reaction chamber 1.
１６はナイロンブラシで構成されたシャッタ−クリーナ
で、反応室１外壁面に取り付けられている。シャッター
クリーナ１６は閉状態時のシャッタ８の下辺直下にあっ
て、その下辺のほぼ全長に沿って延び、シャッタ８の出
入口側の面８ａと反応室１外壁面との間の両面間隔より
若干長い毛足を有する。A shutter cleaner 16 made of a nylon brush is attached to the outer wall surface of the reaction chamber 1. The shutter cleaner 16 is located immediately below the lower side of the shutter 8 in the closed state, extends along substantially the entire length of the lower side, and is slightly longer than the two-sided distance between the inlet / outlet side surface 8a of the shutter 8 and the outer wall surface of the reaction chamber 1. Has hairy legs.
よって、シャッタ８の開閉に伴うシャッタ８の上下動
時、シャッタ８の出入口側の面８ａ及びＯリング９がシ
ャッタ−クリーナ１６と擦れることによって、シャッタ
８の出入口側の面８ａに付着したフレークは除去され
る。Therefore, when the shutter 8 moves up and down as the shutter 8 opens and closes, the surface 8a on the entrance and exit side of the shutter 8 and the O-ring 9 rub against the shutter cleaner 16, so that flakes attached to the surface 8a on the entrance and exit side of the shutter 8 are removed. To be removed.
尚、シャッタ−クリーナ１６はシャッタ８の閉状態時、
反応室１の外壁面上で露出しているのでフレーク等で汚
れれば、それを簡単に掃除することができる。The shutter-cleaner 16 operates when the shutter 8 is closed.
Since it is exposed on the outer wall surface of the reaction chamber 1, it can be easily cleaned if it becomes dirty with flakes or the like.
又、シャッタークリーナ１６はブラシに代ってスポンジ
で構成されてもよい。Further, the shutter cleaner 16 may be made of sponge instead of the brush.
ここで本実施例では、シャッタ８の主として上下方向の
動きによって基板出入口７を開閉しているが、シャッタ
８が反応室１外壁面と平行に回転して基板出入口７を開
閉することも可能である。このとき、シャッタ−クリー
ナ１６はシャッタ８の回転動作に見合った適宜な位置に
取り付ける。Here, in this embodiment, the substrate inlet / outlet 7 is opened / closed mainly by the movement of the shutter 8 in the vertical direction, but it is also possible to rotate the shutter 8 in parallel with the outer wall surface of the reaction chamber 1 to open / close the substrate inlet / outlet 7. is there. At this time, the shutter-cleaner 16 is attached at an appropriate position corresponding to the rotation operation of the shutter 8.
さらに、本実施例では反応室１は単一であったが、シャ
ッタ８を介して複数の反応室１を連続的に隣接させるこ
とも可能である。Furthermore, although the reaction chamber 1 is single in the present embodiment, it is possible to continuously adjoin a plurality of reaction chambers 1 via the shutter 8.
（ト）考案の効果 本考案によると、シャッタの出入口側の面及びＯリング
に付着したフレークを、シャッタ開閉装置を分解して掃
除することなく、反応前・後の基板出入時のシャッタ開
閉に伴う動作によって容易に、且つ短時間で除去するこ
とが可能である。(G) Effect of the Invention According to the present invention, the flakes attached to the entrance-side surface of the shutter and the O-ring can be opened and closed before and after the reaction of the substrate without disassembling and cleaning the shutter opening and closing device. It is possible to remove easily and in a short time by the accompanying operation.
第１図は本考案の一実施例である膜形成用反応装置の垂
直断面図、第２図はその反応装置のシャッタ系付近の拡
大図である。 １……反応室、５……基板、７……基板出入口、８……
シャッタ、９……Ｏリング、１６……シャッタークリー
ナ。FIG. 1 is a vertical sectional view of a film forming reaction apparatus according to an embodiment of the present invention, and FIG. 2 is an enlarged view of the vicinity of a shutter system of the reaction apparatus. 1 ... Reaction chamber, 5 ... Substrate, 7 ... Substrate entrance and exit, 8 ...
Shutter, 9 ... O-ring, 16 ... Shutter cleaner.
Claims (1)
る反応室、前記反応室内に設けられた放電電極、前記反
応室の基板出入口に設けられ、出入口を開閉するシャッ
タ、前記シャッタの開閉作動範囲内に設けられ、シャッ
タの開閉動作時にシャッタの出入口側の面をクリーニン
グするシャッタークリーナ、を備えたことを特徴とする
膜形成用反応室。1. A reaction chamber having a gas inlet, an exhaust port and a substrate inlet / outlet, a discharge electrode provided in the reaction chamber, a shutter provided at the substrate inlet / outlet of the reaction chamber for opening / closing the inlet / outlet, and an opening / closing operation of the shutter. A reaction chamber for film formation, comprising a shutter cleaner that is provided within the range and that cleans the surface of the shutter on the inlet and outlet sides when the shutter is opened and closed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12338189U JPH0627651Y2 (en) | 1989-10-20 | 1989-10-20 | Film forming reactor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12338189U JPH0627651Y2 (en) | 1989-10-20 | 1989-10-20 | Film forming reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0363573U JPH0363573U (en) | 1991-06-20 |
| JPH0627651Y2 true JPH0627651Y2 (en) | 1994-07-27 |
Family
ID=31671362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12338189U Expired - Lifetime JPH0627651Y2 (en) | 1989-10-20 | 1989-10-20 | Film forming reactor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0627651Y2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8460466B2 (en) * | 2010-08-02 | 2013-06-11 | Veeco Instruments Inc. | Exhaust for CVD reactor |
| US10167554B2 (en) | 2010-12-30 | 2019-01-01 | Veeco Instruments Inc. | Wafer processing with carrier extension |
| US9388493B2 (en) | 2013-01-08 | 2016-07-12 | Veeco Instruments Inc. | Self-cleaning shutter for CVD reactor |
-
1989
- 1989-10-20 JP JP12338189U patent/JPH0627651Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0363573U (en) | 1991-06-20 |
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