JPH06268106A - Resin-sealed semiconductor device - Google Patents

Abstract

(57) [Summary] [Purpose] To provide a tape carrier type semiconductor device that is free from voids and cracks and has excellent reliability. [Structure] The element surface of a tape carrier type semiconductor device having a structure in which wiring such as copper provided on an organic insulating tape is bonded to electrodes on the surface of the semiconductor element through bumps such as gold or solder is used as a curing agent. 1. A tape carrier type semiconductor device, characterized by applying and protecting an epoxy resin composition containing one or both of the partially allylated phenol compounds represented by Formula 1 or Formula 2. [Effect] It is possible to supply a tape carrier type semiconductor device which has a reduced viscosity of the resin composition for forming the element surface protection layer, does not generate voids and cracks during curing, and has excellent temperature cycle property and moisture resistance.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for forming a protective layer on the surface of a semiconductor element and a semiconductor device using the same, and more particularly to connecting elements, applying resin by TAB (Tape Automated Bonding) method, TCP (Tape Car)
rier Package).

[0002]

2. Description of the Related Art IC cards, electronic notebooks, cameras, calculators,
Electronic devices such as LCD TVs, word processors, and personal computers are small,
As semiconductor devices become thinner, there is a strong demand for smaller and thinner semiconductor devices incorporated in equipment. As a semiconductor encapsulation method to meet such demands, for example, a method of forming a protective layer on the surface of a semiconductor element by using a liquid epoxy resin as described in JP-A-59-227146 has been proposed. There is.

In recent years, the degree of integration and functions of semiconductor devices have been remarkably improved, and the number of pins has been rapidly increased. In such a semiconductor device, it is difficult to secure various reliability such as temperature cycle resistance and moisture resistance due to the increase in size of the chip and the increase in the number of pins, and improvement thereof has been strongly desired. In order to achieve such an object, a method has recently been adopted in which a filler is blended to reduce the thermal expansion coefficient of the resin composition and improve the temperature cycle resistance.

[0004]

Generally, a resin composition containing a large amount of filler has a high viscosity and cannot be used as it is. Therefore, such a resin component is blended with an organic solvent to dissolve the resin component in the solvent to reduce the viscosity, and then applied and cured on the semiconductor element. However, a resin composition containing a solvent has a problem that voids are likely to occur due to evaporation of the solvent during curing. Further, in order to make the semiconductor device thinner, it is necessary to make the coating thickness of the resin composition as thin as possible, but it is difficult to control the resin thickness because the thickness of the resin layer changes greatly due to evaporation of the solvent during curing. There was a problem such as.

Voids are generated during curing depending on the viscosity of the resin composition caused by the evaporation of the solvent and the progress of the resin curing reaction, and the solvent remains as it is after the solvent evaporates or is caught when the resin is applied to the element surface. It is thought that this is because the traces of air escape remain. As a method of reducing such voids, a method of reducing the compounding amount of the solvent or using a resin component having a low viscosity can be considered. However, in general, a liquid resin composition prepared by dissolving a solid epoxy resin in a solvent has a low workability because the viscosity of the resin composition increases when the compounding amount of the solvent is reduced, and the solvent is evaporated or coated. The traces of air escaped in the process tended to remain as they were, and it was not a drastic measure to reduce voids. As a method of obtaining a liquid resin composition without using a solvent, a method of using a liquid acid anhydride-based curing agent in a liquid epoxy resin is known, but a resin composition using an acid anhydride is known. When a tape carrier type semiconductor device is manufactured by applying and curing the above on the surface of a semiconductor element, the moisture resistance of the semiconductor device may decrease, and the adhesiveness with the tape material may be poor, resulting in peeling at the tape / resin interface during handling. There was a problem.

The object of the present invention is to produce a tape carrier type package (TCP) manufactured by the tape automated bonding (TAB) method, which is free from voids, cracks, and peeling during curing and is excellent in various reliability. Another object of the present invention is to provide a thin semiconductor device and a resin composition used therefor.

[0007]

In order to solve the above-mentioned problems, the inventors of the present invention, after the resin used in the tape carrier type semiconductor resin composition, the solvent, the kind of the filler, etc. and the curing by the curing apparatus by the TAB method, Various studies were conducted on the resin shape, presence of voids, cracks, peeling, and various properties of the cured resin. As a result, by using a resin component having a specific chemical structure as the base resin, the thickness of the resin layer is thin, and voids, cracks, peeling, etc. do not occur during curing,
The inventors have found that the reliability of the obtained semiconductor device can be greatly improved, and have reached the present invention.

The epoxy resin composition used in the present invention uses a partially allylated bisphenol A type compound represented by Chemical formula 1 or a partially allylated bisphenol F type compound represented by Chemical formula 2 as a curing agent. The reason for using such a partially allylated phenol compound in the present invention is
This is because such a compound has low viscosity and high reactivity with the epoxy resin. One or both of these curing agents can be mixed and used. Moreover, you may use together with another hardening | curing agent in the range which does not impair the objective of this invention. On the other hand, as the epoxy resin, various commercially available epoxy resins can be used, but 2 having a naphthalene skeleton or a biphenyl skeleton represented by Chemical formula 3 or 4
Epoxy compounds having functional groups of functional or higher are desirable.
This is because such an epoxy resin has low viscosity and the cured product has low hygroscopicity and good adhesiveness. As the epoxy resin, various epoxy resins can be used in combination as long as the object of the present invention is not impaired. These resin compositions may contain imidazole, amine, phosphorus-based curing accelerators, silane-based coupling agents such as triethoxyaminosilane, trimethoxyepoxysilane, and trimethoxyureidosilane, carbon black, organic dyes, etc., if necessary. Colorant, silica,
A filler such as alumina and a flame retardant such as brominated epoxy, a flame retardant aid such as antimony trioxide, and a reactive diluent can be blended if necessary.

[0009]

[Chemical 5]

[0010]

[Chemical 6]

(In the formula, m and n are each 0 or 1, and the ratio of allyl group to hydroxyl group is in the range of 100: 10 to 100: 90.) The filler used in the present invention is generally Fused silica used as a molding material for semiconductor encapsulation is desirable, and the average particle size is 1 to 15
It is desirable to mix 60 to 85 vol% of those in the range of μm and adjust the thermal expansion coefficient of the cured product within the range of 0.000006 to 0.00002 / ° C. In order to further reduce the coefficient of thermal expansion, it is necessary to further increase the compounding amount of the filler, but in that case, it becomes difficult to apply the resin composition to the semiconductor element surface because the viscosity of the resin increases sharply. ,
Voids are also likely to occur. Further, if the coefficient of thermal expansion is larger than this, problems such as cracks due to thermal stress occurring in the resin or the semiconductor element occur during the temperature cycle test. On the other hand, when a filler having an average particle size of 1 μm or less is used, the viscosity of the resin composition sharply increases and the workability and the like decrease.
When a filler having a thickness of 5 μm or more is used, the filler precipitates during storage of the resin composition, and it is necessary to sufficiently stir before performing the coating step. Further, at that time, air (bubbles) is easily contained in the resin composition, which causes a void to be generated during curing.

The resin composition used in the present invention can be applied to the surface of a semiconductor device without blending a solvent. If necessary, diacetone alcohol, n-butyl alcohol,
Toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, cyclohexanol, methyl cyclohexane, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether , A mixture of a plurality of kinds of dipropylene glycol monobutyl ether, etc., in which the resin component can be dissolved can be blended. At this time, since the viscosity of the curing agent used in the present invention is much smaller than that of the conventional curing agent, the amount of solvent used in the resin composition can be reduced to 1/3 or less of the conventional amount. Even if the solvent evaporates and the viscosity of the resin composition rises in the curing process, the resin composition thus prepared has a lower viscosity than before, so that traces of solvent evaporation and traces of air escape are less likely to remain Hard to occur.

As the resin composition used in the present invention, a method of applying the resin composition by discharging it from a nozzle using a syringe or a method of applying the resin composition like a stamp is used. Furthermore, since the resin composition contains no solvent or contains only a small amount of solvent, the thickness of the resin layer of the semiconductor device can be easily controlled, and the thickness of the resin layer can be 50%.
It is possible to improve various reliability without increasing the thickness of the tape carrier type semiconductor device as a whole by setting the thickness in the range of up to 100 μm.

[0014]

The resin composition for forming an element surface protective layer used in the present invention does not contain a solvent or is a very small amount so that defects such as voids and cracks do not occur in the resin during the curing process and the resin is further cured. The subsequent resin layer has a small coefficient of thermal expansion and a low light transmittance, so that the resin layer can be thinned, and it is possible to supply a thin tape carrier type semiconductor device having excellent reliability.

[0015]

EXAMPLES The present invention will be specifically described below with reference to examples.

Example 1 45 parts by weight of a bifunctional epoxy resin having a naphthalene skeleton represented by Chemical formula 3, a partially allylated phenol compound represented by Chemical formula 1 (hydroxyl group:
Allyl group ratio 100: 65) 55 parts by weight, 1.5 parts by weight of N-cyanoethyl-2-ethyl-4methylimidazole as a curing accelerator, 6 parts by weight of a mixture of ureidosilane and trimethoxysilane as a coupling agent, black 1 part by weight of dye and 400 parts by weight of spherical fused silica having an average particle size of 8 μm were blended, mixed with a three-roll ceramic roll, and then subjected to ultrasonic treatment and vacuum defoaming treatment to obtain a target resin composition. . This resin composition was applied onto a tape carrier having an element of about 4 × 7 mm □ mounted as shown in FIG.
Curing was carried out at 50 ° C. for 2 hours.

Visual inspection for voids, cracks, etc. during curing was visually conducted using a metallurgical microscope. Further, the presence or absence of voids generated inside was observed using a soft X-ray projector.
The moisture resistance reliability was examined by leaving it in an atmosphere of 120 ° C./2 atm and humidity of 95% and checking for the presence or absence of disconnection due to corrosion of aluminum wiring on the element. The temperature cycle property is -55 ° C / 10 minutes,
A temperature cycle test was conducted at 150 ° C. for 10 minutes to check for cracks in the resin layer and breaks in the element wiring.

Example 2 47 parts by weight of a bifunctional epoxy resin having a naphthalene skeleton represented by Chemical formula 3, a partially allylated phenol compound represented by Chemical formula 2 (hydroxyl group:
Ratio of allyl group 100: 73) 53 parts by weight, 1.5 parts by weight of N-cyanoethyl-2-ethyl-4methylimidazole as a curing accelerator, 6 parts by weight of a mixture of ureidosilane and trimethoxysilane as a coupling agent, black 1 part by weight of dye and 400 parts by weight of spherical fused silica having an average particle size of 8 μm were mixed and mixed in the same manner as in Example 1 to prepare a resin composition. Various reliability of a semiconductor device obtained by applying this composition to the surface of an element and then curing the composition was examined.

Example 3 53 parts by weight of a bifunctional epoxy resin having a biphenyl skeleton represented by Chemical formula 4, a partially allylated phenol compound represented by Chemical formula 1 (hydroxyl group:
Allyl group ratio 100: 35) 47 parts by weight, N-cyanoethyl-2-ethyl-4 methylimidazole as a curing accelerator 1.5 parts by weight, ureidosilane as a coupling agent 6 parts by weight, black dye 1 part by weight, average 400 parts by weight of spherical fused silica having a particle size of 8 μm was mixed and mixed in the same manner as in Example 1 to prepare a resin composition. The composition was applied to the surface of an element and then cured to improve various reliability of a semiconductor device. Examined.

Example 4 55 parts by weight of a bifunctional epoxy resin having a biphenyl skeleton represented by Chemical formula 4, a partially allylated phenol compound represented by Chemical formula 2 (hydroxyl group:
Allyl group ratio 100: 30) 45 parts by weight, N-cyanoethyl-2-ethyl-4 methylimidazole as a curing agent 1.5 parts by weight, ureidosilane as a coupling agent 6 parts by weight, black dye 1 part by weight, average 400 parts by weight of spherical fused silica having a particle size of 8 μm was added to 75 parts of diacetone alcohol.
wt%, diethylene glycol monomethyl ether 25
It was dissolved in a mixed solvent of wt% so as to have a nonvolatile content of 95 wt%. This was mixed in the same manner as in Example 1 to prepare a resin composition, and various reliability of the semiconductor device in which the composition was applied to the surface of the element and then cured was examined.

Comparative Example 1 70 parts by weight of bisphenol A type epoxy resin, 30 parts by weight of o-cresol novolac type epoxy resin, 20 parts by weight of phenol novolac, 2-ethyl-4methylimidazole as a curing accelerator 3.
5 parts by weight, 6 parts by weight of ureidosilane as a coupling agent, 1 part by weight of black dye, 400 parts by weight of spherical fused silica having an average particle size of 13 μm, and 75 wt% of diacetone alcohol
%, Diethylene glycol monomethyl ether 12.5
wt%, diethylene glycol monobutyl ether 1
It was dissolved in a mixed solvent of 2.5 wt% so that the nonvolatile content was 70 wt%. This was mixed in the same manner as in Example 1 to prepare a resin composition, and various reliability of the semiconductor device in which the composition was applied to the surface of the element and then cured was examined.

Comparative Example 2 52 parts by weight of bisphenol A type epoxy resin, 48 methylhexahydrophthalic anhydride
Parts by weight, N-cyanoethyl-2-ethyl-4 methylimidazole as a curing agent 1.5 parts by weight, ureidosilane as a coupling agent 6 parts by weight, black dye 1 part by weight,
400 parts by weight of spherical fused silica having an average particle diameter of 13 μm was blended. This was mixed in the same manner as in Example 1 to prepare a resin composition, and various reliability of the semiconductor device in which the composition was applied to the surface of the element and then cured was examined.

[Comparative Example 3] 55 parts by weight of an epoxy resin having a naphthalene skeleton, 45 parts by weight of methylhexahydrophthalic anhydride, and N-cyanoethyl-2- as a curing accelerator.
1.5 parts by weight of ethyl-4-methylimidazole, 6 parts by weight of ureidosilane as a coupling agent, 1 part by weight of black dye, and 400 parts by weight of spherical fused silica having an average particle diameter of 13 μm were compounded. This was mixed in the same manner as in Example 1 to prepare a resin composition, and various reliability of the semiconductor device in which the composition was applied to the surface of the element and then cured was examined.

Table 1 shows the characteristics of the above-mentioned various resin compositions, the state of occurrence of voids and cracks, and Table 2 shows the results of the temperature cycle test and the humidity resistance reliability test. It is clear from Tables 1 and 2 that the semiconductor device of the present invention has no appearance defects such as voids and cracks and is excellent in temperature cycle resistance, moisture resistance reliability and the like.

[0025]

[Table 1]

[0026]

[Table 2]

[0027]

According to the present invention, the viscosity of the resin composition for forming the element surface protective layer is reduced, voids and cracks are not generated during curing, and the tape carrier type semiconductor device is excellent in temperature cycle property and moisture resistance. Can be supplied.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of the present resin-encapsulated semiconductor device.

[Explanation of symbols]

1 ... Sealing resin, 2 ... Semiconductor element, 3 ... Polyimide, 4
... Supporting tape, 5 ... Lead, 6 ... Bump.

Front Page Continuation (72) Inventor Satoshi Eguchi 7-1 Omika-cho, Hitachi-shi, Ibaraki Hitachi Ltd. Hitachi Research Laboratory

Claims (2)

[Claims] 1. In a tape carrier type semiconductor device having a structure in which wiring such as copper is provided on an organic insulating tape and is bonded to a semiconductor element through bumps such as gold or solder, a resin composition for protecting the element surface is cured. A resin-encapsulated semiconductor device comprising an epoxy resin containing one or both of the partially allylic phenol compounds represented by Chemical Formulas 1 and 2 as an agent. [Chemical 1] [Chemical 2] (In the formula, m and n are 0 or 1, respectively, and
The ratio of allyl groups to hydroxyl groups is 100: 10
To 100: 90. ) 2. The resin encapsulation according to claim 1, wherein the epoxy resin composition used for the semiconductor device is a composition containing one or both of the epoxy resins represented by Chemical formulas 3 and 4 as the epoxy resin. Static semiconductor device. [Chemical 3] [Chemical 4]