JPH06267909A - Organic matter removal device - Google Patents
Organic matter removal deviceInfo
- Publication number
- JPH06267909A JPH06267909A JP5048958A JP4895893A JPH06267909A JP H06267909 A JPH06267909 A JP H06267909A JP 5048958 A JP5048958 A JP 5048958A JP 4895893 A JP4895893 A JP 4895893A JP H06267909 A JPH06267909 A JP H06267909A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- heater
- back surface
- uniformity
- protrusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
(57)【要約】
【目的】 ウェーハ裏面の付着異物を低減し、かつレジ
スト除去速度の均一性を改善する。
【構成】 リング状の突部とその内側に平坦部を有する
ヒータにウェーハを置き、ウェーハは該突部とのみ接触
し、その接触部の半径方向の幅は１０ｍｍ以下であり、
かつウェーハ裏面と該平坦部表面との距離は１ｍｍ以下
であり、ヒータにより加熱し、ウェーハにオゾンと紫外
線を供給し、オゾンはウェーハ周辺に向かって流れ、ウ
ェーハ上の有機物を除去する。
【効果】 ウェーハ裏面の付着異物を低減し、かつレジ
スト除去速度の均一性を改善できた。
(57) [Abstract] [Purpose] To reduce foreign matter adhering to the back surface of the wafer and improve the uniformity of the resist removal rate. A wafer is placed on a heater having a ring-shaped protrusion and a flat portion inside thereof, the wafer contacts only the protrusion, and the width of the contact portion in the radial direction is 10 mm or less.
Further, the distance between the back surface of the wafer and the surface of the flat portion is 1 mm or less, and the wafer is heated by a heater to supply ozone and ultraviolet rays to the wafer, and the ozone flows toward the periphery of the wafer to remove organic substances on the wafer. [Effect] It was possible to reduce foreign matter adhering to the back surface of the wafer and improve the uniformity of the resist removal rate.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、レジスト除去装置や、
洗浄装置等の有機物除去装置に関するものである。BACKGROUND OF THE INVENTION The present invention relates to a resist removing device,
The present invention relates to an organic substance removing device such as a cleaning device.
【０００２】[0002]
【従来の技術】従来、図１に示すように枚葉式のレジス
ト除去装置はヒータ上にウェーハを置き、除去処理をす
るため、ウェーハ裏面には異物が多数付着し、次の湿式
洗浄工程でウェーハ裏面の異物が表面に再付着し汚染の
原因になっていた。2. Description of the Related Art Conventionally, as shown in FIG. 1, a single-wafer type resist removing apparatus places a wafer on a heater and performs a removing process. The foreign matter on the back surface of the wafer redeposited on the surface, causing contamination.
【０００３】さらにウェーハ上に供給されたオゾンガス
が、ウェーハ周囲に向かって流れるため、ウェーハ周囲
のレジスト除去速度が低下し、均一性が損なわれる場合
があった（照明学会公開研究会「紫外線光源とその応
用」ＵＶ/Ｏ3光アッシャ １９８９年７月を参照のこ
と）。Further, since the ozone gas supplied onto the wafer flows toward the periphery of the wafer, the resist removal rate around the wafer may be reduced and the uniformity may be impaired. its application "UV / O 3 see the light asher July 1989).
【０００４】[0004]
【発明が解決しようとする課題】本発明は前述のような
従来の問題点、即ちウェーハ裏面の異物付着や均一性の
悪化を防止するものである。SUMMARY OF THE INVENTION The present invention prevents the above-mentioned conventional problems, that is, the adhesion of foreign matter on the back surface of a wafer and the deterioration of uniformity.
【０００５】[0005]
【課題を解決するための手段】ヒータにリング状の突部
とその内側に平坦部を設け、該ヒータにウェーハを置
き、ウェーハは該突部とのみ接触し、その接触部の半径
方向の幅は１０ｍｍ以下であり、かつウェーハ裏面と該
平坦部表面との距離は１ｍｍ以下であることにより前記
課題を解決するものである。A heater is provided with a ring-shaped protrusion and a flat portion inside thereof, a wafer is placed on the heater, and the wafer only contacts the protrusion, and the width of the contact portion in the radial direction. Is 10 mm or less, and the distance between the back surface of the wafer and the surface of the flat portion is 1 mm or less.
【０００６】[0006]
【作用】ウェーハはヒータとはウェーハ周辺部のみでし
か接触しないため、ウェーハ裏面への異物付着はウェー
ハ周辺部のみに限定され、付着異物数を減少できる。Since the wafer is in contact with the heater only at the peripheral portion of the wafer, foreign matter adhered to the back surface of the wafer is limited to only the peripheral portion of the wafer, and the number of adhered foreign matters can be reduced.
【０００７】またウェーハの加熱はウェーハ裏面とヒー
タ平坦部との微小な間隙に存在するガスの熱伝達によ
り、主として行われるが、ウェーハ周辺がヒータの突部
と接触していることからこの部分の熱伝導によっても行
われる。そして直接接触していることからウェーハ周辺
の方がウェーハ中央に比較し、ウェーハ温度が高くな
り、レジスト除去速度が向上し均一性を改善できる。Further, the heating of the wafer is mainly performed by the heat transfer of the gas existing in the minute gap between the back surface of the wafer and the flat portion of the heater, but since the periphery of the wafer is in contact with the protrusion of the heater, this portion of the wafer is heated. It is also done by heat conduction. Since the wafer is in direct contact, the wafer temperature is higher in the periphery of the wafer than in the center of the wafer, the resist removal rate is improved, and the uniformity can be improved.
【０００８】[0008]
【実施例】本発明の一実施例を図２並びに図３を用いて
説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described with reference to FIGS.
【０００９】ヒータ１はその周辺に突部２を有し、その
内側は平坦部３となっている。ウェーハ４は該突部２と
のみ接触するようにヒータ上に乗っている。この時ウェ
ーハとヒータとの接触部の半径方向の幅は１０ｍｍであ
り、ウェーハ裏面と該平坦部３との距離は１ｍｍであ
る。またウェーハ径は１５０ｍｍであり、その表面には
ポジレジスト（ＯＦＰＲ−８００：東京応化製）が１μ
ｍの厚さで塗布されている。ウェーハの上方にはノズル
５が付いている石英板６が設置されており、オゾンガス
は該ノズル５を通してウェーハ表面に供給され、ウェー
ハ周辺に向かって流れていく。また石英板６の上方には
紫外線ランプ７が設置され、ここから放射された紫外線
は石英板６を透過してウェーハ表面に照射される。この
結果、ウェーハ中央付近はヒータ１により２５０℃に、
ウェーハ周辺は２７０℃に加熱され、またオゾンは紫外
線により分解して励起酸素原子となり加熱されたレジス
トと反応しレジストが除去される。その除去速度の測定
結果は図３の（ａ）に示すとおりウェーハ中央に比較
し、ウェーハ周辺の方が高くなり均一性は±６％となっ
ており、従来の結果（ｂ）（均一性±１５％）と比較
し、均一性が改善されていた。The heater 1 has a protrusion 2 on the periphery thereof, and a flat portion 3 is formed inside thereof. The wafer 4 is mounted on the heater so as to contact only the protrusion 2. At this time, the radial width of the contact portion between the wafer and the heater is 10 mm, and the distance between the back surface of the wafer and the flat portion 3 is 1 mm. The wafer diameter is 150 mm, and 1 μ of positive resist (OFPR-800: manufactured by Tokyo Ohka) is formed on the surface of the wafer.
It is applied in a thickness of m. A quartz plate 6 having a nozzle 5 is installed above the wafer, and ozone gas is supplied to the wafer surface through the nozzle 5 and flows toward the periphery of the wafer. An ultraviolet lamp 7 is installed above the quartz plate 6, and the ultraviolet rays emitted from the ultraviolet lamp 7 are transmitted through the quartz plate 6 and applied to the wafer surface. As a result, the temperature near the center of the wafer was raised to 250 ° C. by the heater 1.
The periphery of the wafer is heated to 270 ° C., and ozone is decomposed by ultraviolet rays to become excited oxygen atoms which react with the heated resist to remove the resist. As shown in FIG. 3A, the measurement result of the removal rate is higher in the periphery of the wafer than in the center of the wafer, and the uniformity is ± 6%, and the conventional result (b) (uniformity ± 15%), the uniformity was improved.
【００１０】またウェーハ当たりの裏面の付着異物(粒
径:０.３μｍ以上)は、１６８０個と従来の１２１６０
個に比較し大幅に減少させることができた。Also, the number of foreign matters adhering to the back surface per wafer (particle size: 0.3 μm or more) was 1680, which was 12160 in the conventional case.
It was possible to greatly reduce it compared to the individual.
【００１１】ウェーハとヒータ突部の接触部の半径方向
の幅は小さいほど異物の数が少なくなり良好である。ま
た１０ｍｍより大きくするとウェーハ周辺の温度が高く
なりすぎて均一性を逆に損なう。そしてウェーハ裏面と
ヒータ平坦部との距離が１ｍｍより大きくなるとウェー
ハ中央部の温度が下がりすぎ、均一性を損なうこととな
る（表１、２参照）。The smaller the radial width of the contact portion between the wafer and the heater protrusion, the smaller the number of foreign particles, and the better. On the other hand, if it is larger than 10 mm, the temperature around the wafer becomes too high and the uniformity is adversely affected. When the distance between the back surface of the wafer and the flat portion of the heater is larger than 1 mm, the temperature at the central portion of the wafer is too low, and the uniformity is impaired (see Tables 1 and 2).
【００１２】[0012]
【表１】 [Table 1]
【００１３】[0013]
【表２】 [Table 2]
【００１４】[0014]
【発明の効果】本発明により、ウェーハ裏面に付着する
異物数の低減と、レジスト除去速度の均一性の改善の両
方が同時に実現できる。According to the present invention, it is possible to simultaneously reduce both the number of foreign matters adhering to the back surface of the wafer and improve the uniformity of the resist removal rate.
【図１】従来の主要構成図。FIG. 1 is a conventional main configuration diagram.
【図２】本発明の主要構成図。FIG. 2 is a main configuration diagram of the present invention.
【図３】本発明によるレジスト除去結果。FIG. 3 is a result of resist removal according to the present invention.
１−ヒータ、４−ウェーハ、２−突部、５−ノズル、３
−平坦部、６−石英板。1-heater, 4-wafer, 2-projection, 5-nozzle, 3
-Flat part, 6-quartz plate.
Claims (1)
るヒータにウェーハを置き、ウェーハは該突部とのみ接
触し、その接触部の半径方向の幅は１０ｍｍ以下であ
り、かつウェーハ裏面と該平坦部表面との距離は１ｍｍ
以下であり、ヒータにより加熱し、ウェーハにオゾンと
紫外線を供給し、オゾンはウェーハ周辺に向かって流
れ、ウェーハ上の有機物を除去することを特徴とした有
機物除去装置。1. A wafer is placed on a heater having a ring-shaped protrusion and a flat portion inside thereof, the wafer contacts only the protrusion, and the width of the contact portion in the radial direction is 10 mm or less. The distance between the back surface and the surface of the flat part is 1 mm
The organic substance removing device is characterized in that it is heated by a heater, ozone and ultraviolet rays are supplied to the wafer, and ozone flows toward the periphery of the wafer to remove organic substances on the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5048958A JPH06267909A (en) | 1993-03-10 | 1993-03-10 | Organic matter removal device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5048958A JPH06267909A (en) | 1993-03-10 | 1993-03-10 | Organic matter removal device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06267909A true JPH06267909A (en) | 1994-09-22 |
Family
ID=12817794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5048958A Pending JPH06267909A (en) | 1993-03-10 | 1993-03-10 | Organic matter removal device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06267909A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478401A (en) * | 1994-03-10 | 1995-12-26 | Hitachi, Ltd. | Apparatus and method for surface treatment |
| WO2004055879A1 (en) * | 2002-12-13 | 2004-07-01 | Sumitomo Precision Products Co., Ltd. | Ozone-processing apparatus |
| JP2014027322A (en) * | 2007-03-05 | 2014-02-06 | Semiconductor Energy Lab Co Ltd | Method for manufacturing wiring, and method for manufacturing memory element |
| WO2014129259A1 (en) * | 2013-02-22 | 2014-08-28 | 東京エレクトロン株式会社 | Film-forming method, computer storage medium, and film-forming system |
-
1993
- 1993-03-10 JP JP5048958A patent/JPH06267909A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478401A (en) * | 1994-03-10 | 1995-12-26 | Hitachi, Ltd. | Apparatus and method for surface treatment |
| WO2004055879A1 (en) * | 2002-12-13 | 2004-07-01 | Sumitomo Precision Products Co., Ltd. | Ozone-processing apparatus |
| JP2014027322A (en) * | 2007-03-05 | 2014-02-06 | Semiconductor Energy Lab Co Ltd | Method for manufacturing wiring, and method for manufacturing memory element |
| WO2014129259A1 (en) * | 2013-02-22 | 2014-08-28 | 東京エレクトロン株式会社 | Film-forming method, computer storage medium, and film-forming system |
| JP2014165252A (en) * | 2013-02-22 | 2014-09-08 | Tokyo Electron Ltd | Film formation method, program, computer storage medium, and film formation system |
| CN105074883A (en) * | 2013-02-22 | 2015-11-18 | 东京毅力科创株式会社 | Film-forming method, computer storage medium, and film-forming system |
| US20150357188A1 (en) * | 2013-02-22 | 2015-12-10 | Tokyo Electron Limited | Film forming method, computer storage medium, and film forming system |
| TWI565533B (en) * | 2013-02-22 | 2017-01-11 | 東京威力科創股份有限公司 | Film forming method, computer memory medium and film forming system |
| US9741559B2 (en) | 2013-02-22 | 2017-08-22 | Tokyo Electron Limited | Film forming method, computer storage medium, and film forming system |
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