JPH06232440A - Photosensor - Google Patents
PhotosensorInfo
- Publication number
- JPH06232440A JPH06232440A JP5014746A JP1474693A JPH06232440A JP H06232440 A JPH06232440 A JP H06232440A JP 5014746 A JP5014746 A JP 5014746A JP 1474693 A JP1474693 A JP 1474693A JP H06232440 A JPH06232440 A JP H06232440A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type layer
- amorphous silicon
- electrode
- optical sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 33
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims description 102
- 230000003287 optical effect Effects 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 15
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- -1 and in recent years Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光電変換機能を有する
薄膜状半導体を使用した光センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical sensor using a thin film semiconductor having a photoelectric conversion function.
【０００２】[0002]
【従来の技術】光センサ用光電変換材料として用いられ
ているものの多くは半導体で、とりわけ近年にあって
は、薄膜状の半導体材料が広く用いられている。その薄
膜状半導体の代表的なものとしては、非晶質シリコン膜
やＣｄＳ膜等の非晶質材料などが挙げられ、これらから
成る光センサに関しては例えば特開昭５６−１３５９８
０号等の文献がある。Most of the materials used as photoelectric conversion materials for optical sensors are semiconductors, and in recent years, thin-film semiconductor materials have been widely used. A typical example of the thin film semiconductor is an amorphous material such as an amorphous silicon film or a CdS film, and an optical sensor made of them is disclosed in, for example, Japanese Patent Laid-Open No. 56-13598.
There are documents such as No. 0.
【０００３】図６は、この薄膜状半導体のうち非晶質シ
リコン膜を光電変換材料として利用した、従来例光セン
サの素子構造図で、（ａ）は平面図、（ｂ）は平面図
（ａ）のＡ−Ａ’に於ける断面図である。図中の(61)は
ガラスなどからなる透光性絶縁基板、(62)は光入射側電
極となる酸化錫や、酸化インジューム錫等からなる透明
導電膜、(63)は透明導電膜(62)上に形成された、光電変
換機能を有する非晶質シリコン膜からなる半導体膜で、
膜面に平行なｐｉｎの各導電型半導体膜を積層形成され
て成り、(64)はこの光センサの背面電極となるアルミニ
ュームや銀等からなる金属膜である。FIG. 6 is an element structure diagram of a conventional photosensor using an amorphous silicon film of the thin film semiconductor as a photoelectric conversion material. FIG. 6A is a plan view and FIG. 6B is a plan view ( It is sectional drawing in AA 'of a). In the figure, (61) is a translucent insulating substrate made of glass or the like, (62) is a transparent conductive film made of tin oxide or indium tin oxide, which will be the light incident side electrode, and (63) is a transparent conductive film ( 62) A semiconductor film formed on the amorphous silicon film having a photoelectric conversion function,
(64) is a metal film made of aluminum, silver, or the like, which serves as a back electrode of this photosensor, which is formed by laminating each conductive semiconductor film of pin parallel to the film surface.
【０００４】斯る光センサにあっては、透光性絶縁基板
(61)から入射した光をその半導体膜(63)で吸収し、正孔
と電子とから成る光生成キャリアとして、これらを透明
導電膜(62)と金属膜(64)とからそれぞれ外部に取り出し
信号とする。In such an optical sensor, a translucent insulating substrate is used.
Light incident from (61) is absorbed by the semiconductor film (63), and these are taken out from the transparent conductive film (62) and the metal film (64) as photogenerated carriers composed of holes and electrons, respectively. Signal.
【０００５】この様な光センサの場合、通常使用される
半導体膜の膜厚は、ｐ型半導体層（(63p)としては約２
００Å、ｉ型半導体層(63i)は約３０００Å、そしてｎ
型半導体層(63n)は約５００Åであり、全膜厚としても
１μｍにも満たない極めて薄い、所謂薄膜である。In the case of such an optical sensor, the film thickness of a semiconductor film which is usually used is about 2 as a p-type semiconductor layer ((63p)).
00Å, i-type semiconductor layer (63i) is about 3000Å, and n
The type semiconductor layer (63n) has a thickness of about 500 Å, and is a so-called thin film, which is extremely thin with a total film thickness of less than 1 μm.
【０００６】[0006]
【発明が解決しようとする課題】光電変換機能を果たす
半導体膜が斯様なまでの薄膜であることは、使用する原
材料が極めて僅かで済むというコスト面での有利さを有
する半面、その製造及び取扱には多くの注意が必要とな
る。The fact that the semiconductor film that fulfills the photoelectric conversion function is such a thin film has the advantage in cost that only very few raw materials are used, but on the other hand, its production and Handling requires a lot of attention.
【０００７】とりわけ、この薄膜であるが故の問題とし
て重要なものに、静電気に対する強度、所謂耐圧があ
る。斯る静電気による不良発生は、特に背面電極を形成
した最終工程以降における取扱で生じ易く、一旦静電気
による事故が発生すると、素子は光入射側電極(62)と背
面電極(64)との間がほぼ短絡状態となり素子として使用
に耐えないものとなってしまう。[0007] Above all, an important problem as the thin film is the strength against static electricity, that is, the so-called breakdown voltage. The occurrence of defects due to such static electricity is particularly likely to occur during the handling after the final step of forming the back electrode, and once an accident due to static electricity occurs, the element is placed between the light incident side electrode (62) and the back electrode (64). It becomes a short-circuited state and cannot be used as an element.
【０００８】斯る問題の対策としては、従来、使用する
半導体膜の膜厚を大きくしたり、光入射側電極である金
属膜をより均質に形成することにより、たとえばこの金
属膜の突起に起因する静電気による破壊を低減しようと
する試みがなされていた。As a measure against such a problem, conventionally, by increasing the film thickness of a semiconductor film to be used, or by forming a metal film which is an electrode on the light incident side more uniformly, for example, a protrusion of the metal film is caused. Attempts have been made to reduce the damage caused by static electricity.
【０００９】然し乍ら、この半導体膜の厚膜化による方
法にあっては、本来光センサとして重要な光感度特性の
変動をもたらすものであることから、安易に実施するこ
とはできない。However, the method of increasing the thickness of the semiconductor film cannot easily be carried out because it causes the fluctuation of the photosensitivity characteristic which is originally important as an optical sensor.
【００１０】又、金属膜の均質化による方法にあって
は、その形成条件を常に厳密に制御する必要があり、素
子の量産性及び再現性の面でやはり実施が困難である。Further, in the method of homogenizing the metal film, it is necessary to always strictly control the forming conditions, and it is also difficult to implement in terms of mass productivity and reproducibility of the device.
【００１１】[0011]
【課題を解決するための手段】本発明光センサの特徴と
するところは、ｐ，ｉ，ｎ各層の積層体から成る光電変
換膜の、ｐ層とｉ層との間に膜厚が８００Å以上の非晶
質シリコンカーボン膜を介挿せしめたことにあり、また
この非晶質シリコンカーボン膜を介挿せしめたことによ
り、光電変換膜に被着形成されている第１電極膜と第２
電極膜との間の抵抗値が１０００ｌｕｘの光照射下３．
７×１０4Ω／ｍｍ2 以上となるようにしたことにあ
り、更には、電極膜から延在してなる端子部と、その電
極膜との間に３．７×１０4Ω／ｍｍ2以上の抵抗値を有
する抵抗部材を設けたことにある。A feature of the optical sensor of the present invention is that the photoelectric conversion film composed of a laminate of p, i and n layers has a film thickness of 800 Å or more between the p layer and the i layer. Of the amorphous silicon carbon film, and by inserting this amorphous silicon carbon film, the first electrode film and the second electrode film formed on the photoelectric conversion film are formed.
2. Irradiation with light having a resistance value of 1000 lux with the electrode film.
7 × 10 4 Ω / mm 2 or more, and further 3.7 × 10 4 Ω / mm 2 between the terminal portion extending from the electrode film and the electrode film. The reason is that the resistance member having the above resistance value is provided.
【００１２】[0012]
【作用】本発明光センサは、ｐ型層とｉ型層との間に膜
厚８００Å以上の非晶質シリコンカーボン膜を介挿させ
ることにより、光センサ自体の抵抗値を高くすることが
可能となり、耐圧の向上を図ることができる。In the optical sensor of the present invention, the resistance value of the optical sensor itself can be increased by inserting an amorphous silicon carbon film having a film thickness of 800 Å or more between the p-type layer and the i-type layer. Therefore, the breakdown voltage can be improved.
【００１３】また、この非晶質シリコンカーボン膜を介
挿し、光センサの第１電極膜と第２電極膜との間の抵抗
値を１０００ｌｕｘの光照射下で３．７×１０4Ω／ｍ
ｍ2以上となるように構成させることで、同じく耐圧の
向上を図ることが可能となる。Further, this amorphous silicon carbon film is inserted, and the resistance value between the first electrode film and the second electrode film of the photosensor is 3.7 × 10 4 Ω / m under light irradiation of 1000 lux.
By configuring so that it is at least m 2, it is possible to similarly improve the breakdown voltage.
【００１４】尚、ここでいう３．７×１０4Ω／ｍｍ2と
は、光電変換膜の第１電極膜と第２電極とで挟まれた部
分における抵抗値、即ち、光センサの有効受光面積に対
する抵抗値を意味しており、以下でも同様の意味で上記
単位を使用する。The 3.7 × 10 4 Ω / mm 2 referred to here is the resistance value of the portion of the photoelectric conversion film sandwiched between the first electrode film and the second electrode, that is, the effective light reception of the optical sensor. It means a resistance value with respect to an area, and hereinafter, the above unit is used in the same meaning.
【００１５】更に又、第１電極膜と、この第１電極膜か
らこの光電変換部外に延在した端子部との間に、３．７
×１０4Ω／ｍｍ2以上の抵抗値を示す抵抗部材を具備せ
しめても、耐圧の向上を図ることができる。このこと
は、第２電極膜から延在した端子部との間にも抵抗部材
を備えても同様である。Furthermore, 3.7 is provided between the first electrode film and the terminal portion extending from the first electrode film to the outside of the photoelectric conversion portion.
Even if a resistance member having a resistance value of × 10 4 Ω / mm 2 or more is provided, the withstand voltage can be improved. This is the same even if the resistance member is provided between the terminal portion extending from the second electrode film.
【００１６】[0016]
【実施例】図１は、本発明光センサの第１の実施例を説
明するための素子構造図である。同図中の(1)は光セン
サの支持基板となるガラスや石英等からなる基板、(2)
は光入射側電極となる酸化インジューム錫や酸化錫等か
ら成る第１電極膜、(3)は薄膜状半導体から成る光電変
換膜である。この光電変換膜(3)における(3p)はｐ型
層、(3c)は本願発明の特徴である非晶質シリコンカーボ
ン膜、(3i)はｉ型層、(3n)はｎ型層である。従って、非
晶質シリコンカーボン膜(3c)はｐ型層(3p)とｉ型層(3i)
との間に介挿されるように配置されている。(4)はアル
ミニューム等から成る第２電極膜、(2a)及び(4a)は第１
電極膜(2)、第２電極膜(4)夫々の電流取り出し用の端子
部である。実施例では、本発明の特徴である非晶質シリ
コンカーボン膜(3c)以外の薄膜状半導体としては、非晶
質シリコンを使用し、斯る非晶質シリコンは従来周知の
ものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an element structure diagram for explaining a first embodiment of an optical sensor of the present invention. In the figure, (1) is a substrate made of glass, quartz, etc., which is the supporting substrate of the optical sensor, (2)
Is a first electrode film made of indium tin oxide, tin oxide, or the like, which serves as a light incident side electrode, and (3) is a photoelectric conversion film made of a thin film semiconductor. In this photoelectric conversion film (3), (3p) is a p-type layer, (3c) is an amorphous silicon carbon film which is a feature of the present invention, (3i) is an i-type layer, and (3n) is an n-type layer. . Therefore, the amorphous silicon carbon film (3c) is a p-type layer (3p) and an i-type layer (3i).
It is arranged so as to be inserted between and. (4) is the second electrode film made of aluminum or the like, (2a) and (4a) are the first
The electrode film (2) and the second electrode film (4) are terminal portions for current extraction. In the examples, amorphous silicon is used as a thin film semiconductor other than the amorphous silicon carbon film (3c) which is a feature of the present invention, and such amorphous silicon is well known in the art.
【００１７】本発明光センサでは、非晶質シリコンカー
ボン膜の膜厚が重要である。図２は光センサにおける非
晶質シリコンカーボン膜(3c)の膜厚を種々変化させた場
合の耐圧特性図である。同図には各膜厚に於ける、光照
射下（１０００ｌｕｘ）での光センサ自体の抵抗値をも
同時に示している。通常、実用的な光センサの耐圧とし
ては１５０Ｖ以上が必要であることから、本願発明でも
斯る値を評価基準とした。In the optical sensor of the present invention, the thickness of the amorphous silicon carbon film is important. FIG. 2 is a withstand voltage characteristic diagram when the film thickness of the amorphous silicon carbon film (3c) in the optical sensor is variously changed. The figure also shows the resistance value of the optical sensor itself under light irradiation (1000 lux) at each film thickness. In general, a practical optical sensor requires a withstand voltage of 150 V or higher, and therefore, the value is also used as an evaluation standard in the present invention.
【００１８】尚、図２に示した耐圧は、図３に示す静電
耐圧試験回路によって測定したもので、その具体的な方
法としては、まず直流電源(31)を充電用のコンデンサ(3
2)と直列接続となるようにスイッチ(33)を接続し(イ)、
これによりこのコンデンサ(32)を所望の電圧にまで充電
する。次に、スイッチ(33)を測定試料である光センサ(3
4)側に接続する(ロ)ことによりコンデンサ(32)を放電さ
せ、所望の電圧を光センサに瞬時に印加する。本実験に
際しては、各膜厚を備えた光センサをそれぞれ１００個
用意し、静電破壊が全く生じなかった電圧値をその膜厚
における耐圧値とした。The withstand voltage shown in FIG. 2 is measured by the electrostatic withstand voltage test circuit shown in FIG. 3. As a concrete method, first, the DC power supply (31) is charged with a capacitor (3) for charging.
Connect the switch (33) so that it is connected in series with (2) (a),
This charges this capacitor (32) to the desired voltage. Next, switch the switch (33) to the optical sensor (3
The capacitor (32) is discharged by connecting (b) to the (4) side, and a desired voltage is instantaneously applied to the optical sensor. In this experiment, 100 optical sensors each having each film thickness were prepared, and the voltage value at which electrostatic breakdown did not occur was taken as the breakdown voltage value at that film thickness.
【００１９】図２によれば、非晶質シリコンカーボン膜
(3c)の膜厚が８００Å以上に厚くなると、光センサの耐
圧が１５０Ｖ以上に急峻に大きくなることが分かる。ま
た、この場合の光照射下における光センサ自体の抵抗値
についても８００Åを境に急激に増加することが観察さ
れる。According to FIG. 2, an amorphous silicon carbon film
It can be seen that when the film thickness of (3c) becomes thicker than 800 Å or higher, the withstand voltage of the optical sensor sharply increases to 150 V or higher. It is also observed that the resistance value of the optical sensor itself under the light irradiation in this case rapidly increases at a boundary of 800 Å.
【００２０】従って、センサ自体の抵抗値を上記光照射
条件下３．７×１０4Ω／ｍｍ2以上となるようにｐ型層
とｉ型層との間に非晶質シリコンカーボン膜を介挿せし
めることで、十分な耐圧を得ることが可能となる。ある
いは又、その非晶質シリコンカーボン膜の膜厚を８００
Å以上とすることで十分な耐圧を得ることが可能とな
る。Therefore, an amorphous silicon carbon film is interposed between the p-type layer and the i-type layer so that the resistance value of the sensor itself becomes 3.7 × 10 4 Ω / mm 2 or more under the above-mentioned light irradiation conditions. By inserting it, it becomes possible to obtain a sufficient breakdown voltage. Alternatively, the thickness of the amorphous silicon carbon film is set to 800
By setting it to Å or more, it becomes possible to obtain a sufficient withstand voltage.
【００２１】尚、本願発明では光センサの耐圧向上のた
めの材料として非晶質シリコンカーボン膜を採用した
が、他の絶縁性材料としては、非晶質シリコン窒化膜や
非晶質シリコン酸化膜等が考えられる。しかしながら、
本発明者等の実験によれば、非晶質シリコン窒化膜の場
合にあっては、通常この膜は物性的にややｎ型を示すこ
とから、本願発明のようなｐ型層とｉ型層の間にこれを
介挿すると、光センサとしてのダイオード特性が劣化
し、また非晶質シリコン酸化膜にあっては、構成元素で
ある酸素がｐ型層やｉ型層に拡散してしまうことに因
る、光センサの光電特性劣化が生じてしまうといった問
題が生ずることを確認している。このことから、本発明
者等は斯る問題を生ずる虞のない非晶質シリコンカーボ
ン膜を採用することとしたものである。In the present invention, an amorphous silicon carbon film is used as a material for improving the withstand voltage of the optical sensor, but as another insulating material, an amorphous silicon nitride film or an amorphous silicon oxide film is used. Etc. are possible. However,
According to experiments conducted by the present inventors, in the case of an amorphous silicon nitride film, this film usually exhibits a slightly n-type physical property, so that the p-type layer and the i-type layer as in the present invention are used. If this is inserted in between, the diode characteristics as an optical sensor will deteriorate, and in the amorphous silicon oxide film, oxygen, which is a constituent element, will diffuse into the p-type layer and i-type layer. It has been confirmed that there is a problem that the photoelectric characteristics of the optical sensor deteriorate due to the above. From this, the present inventors have decided to adopt an amorphous silicon carbon film that does not have such a problem.
【００２２】次に、本発明光センサの第２の実施例につ
いて説明する。図４は、前記光センサの素子構造図で、
(ａ）は平面図、(ｂ）は平面図(ａ)に於けるＡ−Ａ’間
の素子構造断面図である。図中の符号は、図１と同一の
材料とするものについては同符号を付している。Next, a second embodiment of the photosensor of the present invention will be described. FIG. 4 is an element structure diagram of the optical sensor,
(a) is a plan view, (b) is a cross-sectional view of the element structure between AA 'in the plan view (a). Regarding the reference numerals in the figure, the same reference numerals are given to those made of the same material as in FIG.
【００２３】本発明光センサの特徴とするところは、酸
化インジューム錫から成る第１電極(2)と、この電極の
電流取り出し端子部(2a)との間に、抵抗部材(5)を備え
たことである。本発明実施例では、この抵抗部材(5)と
して酸化錫のみからなる透明導電膜を使用することで、
第１電極(2)と、アルミニュームからなる端子部(2a)と
の間は、３．７×１０4Ω／ｍｍ2 以上となるように設
計した。この具体的な設計方法としては、第１電極膜
(2)と端子部(2a)との間に膜厚１０００Åの酸化錫を抵
抗部材とする場合、通常酸化錫の抵抗率が５×１０-4Ω
・ｃｍ程度であることから、その抵抗体のパターン幅
（Ｗ）と長さ（Ｌ）の比（Ｌ／Ｗ）が７．４／有効面積
（ｍｍ2）となるようにすればよい。 この抵抗部材とし
ては、この酸化錫の他には、ＩＴＯ膜やチタニュウム膜
などを使用してもよい。The optical sensor of the present invention is characterized in that a resistance member (5) is provided between the first electrode (2) made of indium tin oxide and the current extraction terminal portion (2a) of this electrode. That is. In the example of the present invention, by using a transparent conductive film consisting only of tin oxide as the resistance member (5),
The gap between the first electrode (2) and the terminal portion (2a) made of aluminum was designed to be 3.7 × 10 4 Ω / mm 2 or more. The specific design method is as follows:
When tin oxide having a film thickness of 1000Å is used as the resistance member between (2) and the terminal part (2a), the resistivity of tin oxide is usually 5 × 10 -4 Ω.
Since the resistance is about cm, the ratio (L / W) of the pattern width (W) to the length (L) of the resistor may be 7.4 / effective area (mm 2 ). In addition to tin oxide, an ITO film, a titanium film, or the like may be used as the resistance member.
【００２４】実施例では、第１電極(2)と接続するよう
に抵抗部材を配置したが、本願発明はこれに限らず、第
２電極(4)とその端子部(4a)との間に抵抗部材を設けて
もよいことは言うまでもない。In the embodiment, the resistance member is arranged so as to be connected to the first electrode (2), but the present invention is not limited to this, and the resistance member is arranged between the second electrode (4) and its terminal portion (4a). It goes without saying that a resistance member may be provided.
【００２５】図５は、本発明光センサの第３の実施例を
示す素子構造図で、図中の符号は図１と同様のものを使
用している。本発明の特徴とするところは、光電変換部
の第１電極膜(2)から端子部(2a)に至るパターンを、そ
の第１電極膜(2)と同一の材料から成る抵抗部材(5)で構
成したことにある。この抵抗部材(5)のパターン形状
は、その面抵抗に応じて、パターン幅と長さとの比を変
化させることで容易に所望の抵抗値を得ることが可能と
なる。FIG. 5 is an element structure diagram showing a third embodiment of the photosensor of the present invention, and the reference numerals in the figure are the same as those in FIG. The feature of the present invention resides in that the pattern extending from the first electrode film (2) of the photoelectric conversion part to the terminal part (2a) has a resistance member (5) made of the same material as that of the first electrode film (2). It consists of. With respect to the pattern shape of the resistance member (5), a desired resistance value can be easily obtained by changing the ratio of the pattern width and the length according to the surface resistance.
【００２６】[0026]
【発明の効果】本発明光センサは、ｐ型層とｉ型層との
間に膜厚８００Å以上の非晶質シリコンカーボンを介挿
せしめることにより光センサ自体の抵抗値を高くするこ
とができることから、静電気に対する耐圧を高めること
ができる。According to the optical sensor of the present invention, the resistance value of the optical sensor itself can be increased by inserting the amorphous silicon carbon having a film thickness of 800 Å or more between the p-type layer and the i-type layer. Therefore, the withstand voltage against static electricity can be increased.
【００２７】また、この非晶質シリコンカーボン膜を介
挿することにより、光センサの電流取り出し端子である
第１電極と第２電極との間の抵抗値を、１０００ｌｕｘ
の光照射下で３．７×１０4Ω／ｍｍ2以上とすること
で、同じく耐圧の向上を図ることができる。By inserting this amorphous silicon carbon film, the resistance value between the first electrode and the second electrode, which is the current extraction terminal of the optical sensor, is 1000 lux.
By setting the resistance to 3.7 × 10 4 Ω / mm 2 or more under the light irradiation, it is possible to similarly improve the breakdown voltage.
【００２８】更に、本発明光センサによれば、光センサ
としての光電変換部から延在した端子部と、それぞれの
電極膜との間に３．７×１０4Ω／ｍｍ2以上の抵抗体を
設けることによって、耐圧の向上を図ることができる。Further, according to the optical sensor of the present invention, a resistor having a resistance of 3.7 × 10 4 Ω / mm 2 or more is provided between the terminal portion extending from the photoelectric conversion portion as the optical sensor and each electrode film. By providing, it is possible to improve the breakdown voltage.
【００２９】これにより、従来問題となっていた静電破
壊による歩留まりの低下を抑圧することができることと
なる。As a result, it is possible to suppress a decrease in yield due to electrostatic breakdown, which has been a problem in the past.
【図１】本発明光センサの素子構造図である。FIG. 1 is an element structure diagram of an optical sensor of the present invention.
【図２】本発明光センサの非晶質シリコンカーボン膜の
膜厚と、耐圧及び抵抗値との関係を示す特性図である。FIG. 2 is a characteristic diagram showing the relationship between the film thickness of an amorphous silicon carbon film of the optical sensor of the present invention and the withstand voltage and resistance value.
【図３】光センサの耐圧を評価する際に使用した静電耐
圧試験回路である。FIG. 3 is an electrostatic breakdown voltage test circuit used when evaluating the breakdown voltage of an optical sensor.
【図４】本発明光センサの第２の実施例を示す素子構造
図である。FIG. 4 is an element structure diagram showing a second embodiment of the optical sensor of the present invention.
【図５】本発明光センサの第３の実施例を示す素子構造
図である。FIG. 5 is an element structure diagram showing a third embodiment of the optical sensor of the present invention.
【図６】従来例光センサの素子構造図である。FIG. 6 is an element structure diagram of a conventional photosensor.
(1)…基板 (2)…第１電
極膜 (3)…光電変換膜 (3p)…ｐ型
層 (3c)…非晶質シリコンカーボン膜 (3i)…ｉ型
層 (3n)…ｎ型層 (4)…第２電
極膜 (2a)…端子部 (4a)…端子
部 (5)…抵抗部材(1) ... Substrate (2) ... First electrode film (3) ... Photoelectric conversion film (3p) ... P-type layer (3c) ... Amorphous silicon carbon film (3i) ... i-type layer (3n) ... N-type Layer (4) ... Second electrode film (2a) ... Terminal part (4a) ... Terminal part (5) ... Resistance member
Claims (3)
状半導体から成る光電変換膜と、第２電極膜とを順次被
着形成されて成る光センサに於いて、上記光電変換膜は
ｐ型層とｉ型層とｎ型層との積層体から成るとともに、
上記ｐ型層とｉ型層との間に膜厚が８００Å以上の非晶
質シリコンカーボン膜を介挿せしめたことを特徴とする
光センサ。1. A photoelectric sensor comprising: a first electrode film, a photoelectric conversion film made of a thin film semiconductor, and a second electrode film, which are sequentially deposited on a main surface of a substrate; The conversion film is composed of a laminated body of a p-type layer, an i-type layer and an n-type layer, and
An optical sensor, wherein an amorphous silicon carbon film having a film thickness of 800 Å or more is inserted between the p-type layer and the i-type layer.
半導体から成る光電変換膜と、第２電極膜とを順次被着
形成されて成る光センサに於いて、上記光電変換膜はｐ
型層とｉ型層とｎ型層との積層体から成るとともに、上
記ｐ型層とｉ型層との間に非晶質シリコンカーボン膜を
介挿せしめたことにより、上記第１電極膜と上記第２電
極膜間の抵抗値が１０００ｌｕｘの光照射下３．７×１
０4Ω／ｍｍ2 以上としたことを特徴とする光センサ。2. A photoelectric sensor comprising: a first electrode film, a photoelectric conversion film made of a thin film semiconductor, and a second electrode film, which are sequentially formed on a main surface of a substrate; The membrane is p
The first electrode film is composed of a laminate of a type layer, an i-type layer, and an n-type layer, and an amorphous silicon carbon film is interposed between the p-type layer and the i-type layer. 3.7 × 1 under light irradiation with a resistance value between the second electrode films of 1000 lux
An optical sensor having a resistance of 0 4 Ω / mm 2 or more.
状半導体から成る光電変換膜と、第２電極膜とを順次被
着形成されてなる光電変換部と、上記第１電極膜及び第
２電極膜から夫々延在してなる端子部と、を備えた光セ
ンサに於いて、上記電極膜から上記端子部との間に、
３．７×１０4Ω／ｍｍ2以上の抵抗値を有する抵抗部材
を備えたことを特徴とする光センサ。3. A photoelectric conversion part formed by sequentially depositing a first electrode film, a photoelectric conversion film made of a thin film semiconductor, and a second electrode film on one main surface of a substrate, and the first electrode. In an optical sensor including a terminal portion extending from an electrode film and a second electrode film, respectively, between the electrode film and the terminal portion,
An optical sensor comprising a resistance member having a resistance value of 3.7 × 10 4 Ω / mm 2 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01474693A JP3407917B2 (en) | 1993-02-01 | 1993-02-01 | Light sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01474693A JP3407917B2 (en) | 1993-02-01 | 1993-02-01 | Light sensor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002342804A Division JP3773894B2 (en) | 2002-11-26 | 2002-11-26 | Optical sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06232440A true JPH06232440A (en) | 1994-08-19 |
| JP3407917B2 JP3407917B2 (en) | 2003-05-19 |
Family
ID=11869683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01474693A Expired - Fee Related JP3407917B2 (en) | 1993-02-01 | 1993-02-01 | Light sensor |
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| Country | Link |
|---|---|
| JP (1) | JP3407917B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007317686A (en) * | 2006-05-23 | 2007-12-06 | Seiko Epson Corp | Optical element chip, optical module and manufacturing method thereof |
-
1993
- 1993-02-01 JP JP01474693A patent/JP3407917B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007317686A (en) * | 2006-05-23 | 2007-12-06 | Seiko Epson Corp | Optical element chip, optical module and manufacturing method thereof |
| US7466733B2 (en) | 2006-05-23 | 2008-12-16 | Seiko Epson Corporation | Optical device chip, and optical module and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3407917B2 (en) | 2003-05-19 |
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