JPH06232206A - Method for mounting semiconductor element - Google Patents
Method for mounting semiconductor elementInfo
- Publication number
- JPH06232206A JPH06232206A JP1343093A JP1343093A JPH06232206A JP H06232206 A JPH06232206 A JP H06232206A JP 1343093 A JP1343093 A JP 1343093A JP 1343093 A JP1343093 A JP 1343093A JP H06232206 A JPH06232206 A JP H06232206A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- mounting
- metal
- circuit board
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Abstract
(57)【要約】
【目的】製造歩留まりの向上。また製造コストの改善。
【構成】それぞれの電極パッド15を介して複数の金属
突起14と電気的に導通した3個以上の位置合わせ用金
属突起26、27、28とが一主面に形成された半導体
素子11を、上記金属突起26、27、28に対応する
検査用配線17、18、19が形成された回路基板11
上に、その検査用配線17、18、19のうちいずれか
の2個の配線を電気的導通させながら位置合わせしてフ
ェイスダウン実装せしめる半導体素子の実装方法。
(57) [Summary] [Purpose] To improve the manufacturing yield. Also improved manufacturing costs. A semiconductor element (11) having three or more alignment metal projections (26, 27, 28) electrically connected to a plurality of metal projections (14) via respective electrode pads (15) is formed on one main surface. Circuit board 11 on which inspection wirings 17, 18, and 19 corresponding to the metal protrusions 26, 27, and 28 are formed.
A semiconductor element mounting method in which any two wirings of the inspection wirings 17, 18, and 19 are electrically connected to each other and are aligned and face-down mounted.
Description
【0001】[0001]
【産業上の利用分野】本発明は正確な位置合わせをして
半導体素子を配線基板上に実装するフェイスダウンによ
る半導体素子の実装方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a face-down semiconductor element mounting method for mounting a semiconductor element on a wiring board with accurate alignment.
【0002】[0002]
【従来の技術】近年、フェイスダウンによる半導体素子
の実装方法が提案されているが、この実装方法を図4に
示す。同図において、1はステージ2上に配置した回路
基板であり、3はこの回路基板1上の配線である。この
回路基板1の基板が不透明基板であって、この回路基板
1上に半導体素子を実装する場合、先ずカメラ4により
予め回路基板1の実装予定部位5を認識させ、次いで半
導体素子6を固定した加圧治具7を実装予定部位5の上
方に移動し、そして、この加圧治具7を実装予定部位5
へ向けて下げ、その部位5に実装するに当たって、カメ
ラ8により半導体素子6の金属パッド上に設けられた金
属突起を認識し、かかる両カメラ4、8の認識をテレビ
モニタ9でもって映像化し、その画像処理によって位置
合わせを行っていた。2. Description of the Related Art In recent years, a face-down mounting method for semiconductor elements has been proposed. This mounting method is shown in FIG. In FIG. 1, 1 is a circuit board arranged on the stage 2, and 3 is wiring on the circuit board 1. When the substrate of this circuit board 1 is an opaque substrate and a semiconductor element is mounted on this circuit board 1, first the camera 4 is made to recognize the planned mounting site 5 of the circuit board 1 in advance, and then the semiconductor element 6 is fixed. The pressure jig 7 is moved above the planned mounting site 5, and the pressing jig 7 is mounted on the planned mounting site 5.
When it is mounted on the part 5, the camera 8 recognizes the metal protrusion provided on the metal pad of the semiconductor element 6, and the TV monitor 9 visualizes the recognition of both cameras 4 and 8. Positioning was performed by the image processing.
【0003】[0003]
【従来技術の課題】しかしながら、上記提案の実装方法
においては、加圧治具7を実装予定部位5の上方に移動
し、そして、実装予定部位5へ向けて下げるという移動
行路であり、これにより、その行路が長くなり、そのた
めに雰囲気の温度が±1℃変化しても、その移動誤差が
数十ミクロンの程度で生じる場合があった。However, in the mounting method proposed above, the pressing jig 7 is a moving path in which the pressing jig 7 is moved above the mounting scheduled portion 5 and lowered toward the mounting scheduled portion 5. However, even if the temperature of the atmosphere changes by ± 1 ° C. because of the long path, the movement error may occur in the order of several tens of microns.
【0004】また、半導体素子6を固定した加圧治具7
を実装予定部位5へ向けて下げ、その部位5に実装する
に当たって、加圧治具7の芯振れが原因となって、高精
度に実装できないという場合もあった。A pressure jig 7 to which the semiconductor element 6 is fixed
There was a case where it was not possible to mount it with high accuracy when lowering it toward the mounting planned site 5 and mounting it on the site 5 due to the runout of the pressing jig 7.
【0005】したがって、このような実装不良は、その
後の検査により接続不良として確認され、その結果、製
造歩留まりが低下していた。Therefore, such a mounting defect is confirmed as a connection defect by the subsequent inspection, and as a result, the manufacturing yield is lowered.
【0006】[0006]
【課題を解決するための手段】本発明の半導体素子の実
装方法は、金属突起を有する電極パッドと、電気的に導
通した3個以上の位置合わせ用導電部を有する電極パッ
ドとが一主面に形成された半導体素子を、上記金属突起
に対応する配線部と上記位置合わせ用導電部に対応する
プロービング用導電部とが形成された配線基板上に、該
プロービング用導電部のうちいずれか2個の導電部間を
電気的導通させながら位置合わせしてフェイスダウン実
装せしめることを特徴とする。According to the method of mounting a semiconductor element of the present invention, an electrode pad having a metal projection and an electrode pad having three or more electrically conductive portions for positioning are electrically connected to each other. Any one of the probing conductive portions may be formed on a wiring substrate on which a wiring portion corresponding to the metal protrusion and a probing conductive portion corresponding to the alignment conductive portion are formed. It is characterized in that face-down mounting is performed by aligning the conductive parts while electrically conducting them.
【0007】[0007]
【作用】上記構成の半導体素子の実装方法においては、
プロービング用導電部のうち、いずれかの2個の該導電
部間を電気的導通させながら位置合わせを行うので、そ
の電気的導通により位置を正確に確認でき、これによ
り、精度の高い実装ができる。In the mounting method of the semiconductor device having the above structure,
Since positioning is performed while electrically conducting between any two of the conductive portions for probing, it is possible to accurately confirm the position by the electrical conduction, which enables highly accurate mounting. .
【0008】[0008]
【実施例】本例においては、既に提案されたフェイスダ
ウンによる半導体素子の実装方法において、同様に加圧
治具に半導体素子を固定し、この加圧治具を回路基板に
搭載する場合を示す。その実施例を図1〜図3により詳
述する。[Embodiment] This embodiment shows a case where a semiconductor element is fixed to a pressure jig and the pressure jig is mounted on a circuit board in the face-down semiconductor element mounting method already proposed. . The embodiment will be described in detail with reference to FIGS.
【0009】図1は加圧治具(図示せず)により半導体
素子11を回路基板10上に搭載した状態を示し、この
回路基板10上には複数の配線12が形成される。ま
た、図2はその搭載状態において、プローブピン13を
用いて位置調整を行う検査工程を示す。これらの図にお
いて、各配線12にはフェイスダウン用の接続領域14
が形成され、半導体素子11にはそれぞれ電極パッド1
5を介して金属突起16が形成され、これらの金属突起
16はそれぞれ接続領域14と対になっている。また、
回路基板10上には配線12以外に検査用配線17、1
8、19が形成され、これらにも同様にフェイスダウン
用の接続領域20、21、22が形成され、半導体素子
11にも同様にそれぞれ電極パッド23、24、25を
介して金属突起26、27、28が形成され、それぞれ
接続領域20、21、22と対になっている。しかも、
上記3個の電極パッド23、24、25は電気的に導通
している。FIG. 1 shows a state in which a semiconductor element 11 is mounted on a circuit board 10 by a pressing jig (not shown), and a plurality of wirings 12 are formed on the circuit board 10. Further, FIG. 2 shows an inspection process in which the position adjustment is performed using the probe pin 13 in the mounted state. In these drawings, each wiring 12 has a face-down connection area 14
Are formed, and the electrode pads 1 are formed on the semiconductor element 11, respectively.
5, metal projections 16 are formed, and these metal projections 16 are paired with the connection regions 14, respectively. Also,
In addition to the wiring 12, the inspection wirings 17 and 1 are provided on the circuit board 10.
8 and 19 are formed, and face-down connection regions 20, 21 and 22 are also formed on these, and metal projections 26 and 27 are similarly formed on the semiconductor element 11 via electrode pads 23, 24 and 25, respectively. , 28 are formed and are paired with the connection regions 20, 21, 22 respectively. Moreover,
The three electrode pads 23, 24, 25 are electrically connected.
【0010】また、図3は半導体素子11上の金属突起
16と、金属突起26との両金属突起の差異を示す比較
図である。尚、金属突起27、28は金属突起26と同
一構造である。同図によれば、シリコン基板29上に酸
化膜30に形成し、その酸化膜30の上はいずれにもア
ルミ膜31、32を形成し、更にCr−Cu、Ni−C
u、Cr−Ni−Cu、Cr−Cu−Au、Ni−Cu
−Au等からなるバリヤメタル33、34を形成し、上
記の電極パッド15、23を成す。また、35はシリコ
ン基板表面に形成した回路(酸化膜30)を保護するた
めのSiO2 から成る保護膜である。そして、これらの
電極パッド15、23の上に金属突起16、26が形成
される。そして、通常の配線12に対応する金属突起1
6の突き出し寸法は、8〜15μmであるが、検査用の
金属突起26は金属突起16に比べて0.5〜1μm突
き出すように大きな寸法にする。FIG. 3 is a comparative view showing the difference between the metal projection 16 on the semiconductor element 11 and the metal projection 26. The metal protrusions 27 and 28 have the same structure as the metal protrusion 26. According to the figure, an oxide film 30 is formed on a silicon substrate 29, aluminum films 31 and 32 are formed on the oxide film 30, and Cr-Cu and Ni-C are further formed.
u, Cr-Ni-Cu, Cr-Cu-Au, Ni-Cu
Barrier metals 33 and 34 made of Au or the like are formed to form the electrode pads 15 and 23. Reference numeral 35 is a protective film made of SiO 2 for protecting the circuit (oxide film 30) formed on the surface of the silicon substrate. Then, the metal protrusions 16 and 26 are formed on the electrode pads 15 and 23. Then, the metal protrusion 1 corresponding to the normal wiring 12
The protrusion size of 6 is 8 to 15 μm, but the metal protrusion 26 for inspection is larger than the metal protrusion 16 so as to protrude by 0.5 to 1 μm.
【0011】次に本発明に係る上記半導体素子11を回
路基板10上にフェイスダウンにより実装する工程を述
べる。工程(1) 回路基板10上の半導体素子実装予定部位に、予め熱硬
化性樹脂もしくは紫外線硬化樹脂を塗布する。Next, a process of mounting the semiconductor element 11 according to the present invention on the circuit board 10 by face down will be described. Step (1) A thermosetting resin or an ultraviolet curable resin is applied in advance to a portion where the semiconductor element is to be mounted on the circuit board 10.
【0012】工程(2) 半導体素子11を治具に固定し、この治具の移動により
半導体素子11を所定の実装予定部位に配置する。これ
には、既に提案された従来周知の実装方法を用いること
ができる。例えば図4に示す方法がある。その他に回路
基板10が透明基板を用いた場合には、その搭載面の裏
側にCCDカメラを配置し、接続領域20、21、22
と、金属突起16、26、27、28とを認識しなが
ら、実装する方法がある。 Step (2) The semiconductor element 11 is fixed to a jig, and the semiconductor element 11 is placed at a predetermined mounting site by moving the jig. For this, a conventionally well-known mounting method already proposed can be used. For example, there is a method shown in FIG. In addition, when the circuit board 10 uses a transparent substrate, a CCD camera is arranged on the back side of the mounting surface, and the connection areas 20, 21, 22 are provided.
There is a method of mounting while recognizing the metal projections 16, 26, 27 and 28.
【0013】工程(3) 図2に示すように、プローブピン13を用いて、正確に
半導体素子11を所定の実装予定部位に配置し、その適
正検査をプロービングにより行う。即ち、半導体素子1
1を固定している治具に対して加圧し(約20〜40グ
ラム/金属突起)、これにより、各金属突起26、2
7、28により仮搭載し、そして、検査用配線17、1
8、19のうち、2個の配線を選び、その配線間に電流
を流し、その導通を確認する。そして、その導通確認テ
ストをその2個の配線の種類を変えることにより2回行
い、この2回以上のテストにより、いずれも導通状態が
得られたならば、各金属突起16がそれぞれに対応する
接続領域14と正確に位置していることになる。しかし
ながら、各プロービングのうち一つでも導通状態が得ら
れない場合には、正確に位置合わせが行われていないと
判断できるので、再度、工程(2)の作業を行い、正確
な位置合わせが達成されるまで、続ける。 Step (3) As shown in FIG. 2, the probe pin 13 is used to accurately dispose the semiconductor element 11 at a predetermined mounting site, and the proper inspection is performed by probing. That is, the semiconductor device 1
1 is pressed against the fixing jig (about 20 to 40 grams / metal protrusion), whereby each metal protrusion 26, 2
Temporarily mounted by 7, 28, and inspection wiring 17, 1
Two wirings are selected from the wirings 8 and 19 and a current is passed between the wirings to confirm the continuity. Then, the continuity confirmation test is performed twice by changing the types of the two wirings, and if the continuity is obtained by the test of two or more times, each metal protrusion 16 corresponds to each. It will be located exactly with the connection area 14. However, if even one of the probings cannot obtain the conduction state, it can be determined that the alignment has not been performed accurately. Therefore, the work of step (2) is performed again to achieve the accurate alignment. Continue until you are told.
【0014】工程(4) 治具に対して加圧し(約60〜80グラム/金属突
起)、これにより、金属突起26、27、28を変形あ
るいは潰し、これによって各金属突起16をそれぞれに
対応する接続領域14と精度よく導通状態が得られる。In step (4) , pressure is applied to the jig (about 60 to 80 grams / metal protrusion), whereby the metal protrusions 26, 27, 28 are deformed or crushed, and each metal protrusion 16 corresponds to it. The conductive state with the connecting region 14 is accurately obtained.
【0015】工程(5) 半導体素子実装予定部位に予め塗布した前記熱硬化性樹
脂もしくは紫外線硬化樹脂を加熱もしくは紫外線照射に
より硬化させる。 Step (5) The thermosetting resin or the ultraviolet curable resin previously applied to the site where the semiconductor element is to be mounted is cured by heating or ultraviolet irradiation.
【0016】かくして上記構成の半導体素子実装方法に
よれば、予め各金属突起26、27、28と接続領域2
0、21、22とをそれぞれプロービングして、半導体
素子11を正確に所定の実装予定部位に配置し、高精度
のよい実装ができるようになった。Thus, according to the semiconductor element mounting method having the above structure, the metal protrusions 26, 27 and 28 and the connection region 2 are previously formed.
By probing 0, 21, and 22 respectively, the semiconductor element 11 is accurately arranged at a predetermined mounting planned site, and high-precision mounting can be performed.
【0017】尚、本発明は上記実施例の限定されるもの
ではなく、本発明の要旨を逸脱しない範囲内において、
種々の変更や改善は何ら差し支えない。例えば、位置合
わせ用導電部として形成した一方の金属突起を他方の金
属突起に比べて硬度を小さくすることで、加圧接続時に
その一方の金属突起の影響を最小限にできる。The present invention is not limited to the above-mentioned embodiments, and within the scope of the present invention,
Various changes and improvements can be made. For example, the hardness of one metal projection formed as the alignment conductive portion is made smaller than that of the other metal projection, so that the influence of the one metal projection at the time of pressure connection can be minimized.
【0018】[0018]
【発明の効果】以上の通り、本発明に係る半導体素子の
実装方法は、それぞれの電極パッドを介して複数の金属
突起と電気的に導通した3個以上の位置合わせ用導電部
とが一主面に形成された半導体素子を、上記金属突起に
対応する配線部と上記位置合わせ用導電部に対応するプ
ロービング用導電部とが形成された配線基板上に、該プ
ロービング用導電部のうちいずれかの2個の該導電部間
を電気的導通させながら位置合わせしてフェイスダウン
実装せしめる構成であり、この構成により、プロービン
グ用導電部のうち、いずれかの2個の該導電部間を電気
的導通させながら位置合わせを行うので、その電気的導
通により位置を正確の確認でき、これにより、精度の高
い実装ができ、その結果、その実装の良品比率が高くな
り、あるいは、修復作業を省くことができ、製造歩留ま
りが高くなり、製造コストが改善できた。As described above, the semiconductor element mounting method according to the present invention mainly includes three or more alignment conductive portions electrically connected to the plurality of metal protrusions through the respective electrode pads. The semiconductor element formed on the surface, on the wiring substrate on which the wiring portion corresponding to the metal protrusion and the probing conductive portion corresponding to the alignment conductive portion are formed, one of the probing conductive portions. This is a configuration in which face-down mounting is performed by aligning the two conductive portions while electrically conducting them. With this configuration, any two of the conductive portions of the probing conductive portion are electrically connected. Since the position is adjusted while conducting electricity, the position can be accurately confirmed by the electrical conduction, which enables highly accurate mounting, and as a result, the ratio of non-defective products in the mounting increases or Work can be omitted, the manufacturing yield is increased, and was able to improve the production cost.
【0019】また、本発明に係る実装方法によれば、上
記位置合わせ用導電部が金属突起に比べて寸法上大きく
することにより、プロービングの際に金属突起が配線基
板上の配線と当たらず、配線に傷をつけることがなく、
また、金属突起を接続前に潰してしまうことが回避でき
るという利点がある。Further, according to the mounting method of the present invention, since the conductive portion for alignment is larger in size than the metal protrusion, the metal protrusion does not contact the wiring on the wiring substrate during probing, Without damaging the wiring,
Further, there is an advantage that it is possible to avoid crushing the metal protrusion before the connection.
【図1】半導体素子の回路基板への実装図である。FIG. 1 is a mounting diagram of a semiconductor element on a circuit board.
【図2】半導体素子の回路基板への実装状態を調べる検
査工程を示す図である。FIG. 2 is a diagram showing an inspection process for checking a mounting state of a semiconductor element on a circuit board.
【図3】半導体素子上の金属突起の差異を示す断面図で
ある。FIG. 3 is a cross-sectional view showing a difference between metal protrusions on a semiconductor element.
【図4】従来の半導体素子の実装方法を示す概略図であ
る。FIG. 4 is a schematic view showing a conventional method for mounting a semiconductor element.
1、10・・回路基板 6、11・・半導体素子 12・・・・配線 13・・・・プローブピン 16、26、27、28・・・・金属突起 1, 10 ... Circuit board 6, 11 ... Semiconductor element 12 ... Wiring 13 ... Probe pin 16, 26, 27, 28 ... Metal projection
Claims (1)
に導通した3個以上の位置合わせ用導電部を有する電極
パッドとが一主面に形成された半導体素子を、上記金属
突起に対応する配線部と上記位置合わせ用導電部に対応
するプロービング用導電部とが形成された配線基板上
に、該プロービング用導電部のうちいずれか2個の導電
部間を電気的導通させながら位置合わせしてフェイスダ
ウン実装せしめる半導体素子の実装方法。1. A semiconductor element having an electrode pad having a metal protrusion and an electrode pad having three or more electrically conductive positioning portions electrically connected to each other on one main surface corresponds to the metal protrusion. Positioning is performed on a wiring board on which a wiring part and a probing conductive part corresponding to the positioning conductive part are formed while electrically conducting between any two conductive parts of the probing conductive part. A semiconductor element mounting method that allows face-down mounting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1343093A JPH06232206A (en) | 1993-01-29 | 1993-01-29 | Method for mounting semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1343093A JPH06232206A (en) | 1993-01-29 | 1993-01-29 | Method for mounting semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06232206A true JPH06232206A (en) | 1994-08-19 |
Family
ID=11832926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1343093A Pending JPH06232206A (en) | 1993-01-29 | 1993-01-29 | Method for mounting semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06232206A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4036279A1 (en) * | 1989-11-22 | 1991-05-23 | Fuji Heavy Ind Ltd | VALVE DRIVE FOR AN INTERNAL COMBUSTION ENGINE |
-
1993
- 1993-01-29 JP JP1343093A patent/JPH06232206A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4036279A1 (en) * | 1989-11-22 | 1991-05-23 | Fuji Heavy Ind Ltd | VALVE DRIVE FOR AN INTERNAL COMBUSTION ENGINE |
| DE4036279C2 (en) * | 1989-11-22 | 1993-03-04 | Fuji Jukogyo K.K., Tokio/Tokyo, Jp | |
| DE4036279C3 (en) * | 1989-11-22 | 1999-01-14 | Fuji Heavy Ind Ltd | Valve drive for an internal combustion engine |
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