JPH06230562A - Transfer mask and electron beam drawing device - Google Patents
Transfer mask and electron beam drawing deviceInfo
- Publication number
- JPH06230562A JPH06230562A JP1342893A JP1342893A JPH06230562A JP H06230562 A JPH06230562 A JP H06230562A JP 1342893 A JP1342893 A JP 1342893A JP 1342893 A JP1342893 A JP 1342893A JP H06230562 A JPH06230562 A JP H06230562A
- Authority
- JP
- Japan
- Prior art keywords
- transfer mask
- electron beam
- pattern
- mask
- beam drawing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
(57)【要約】
【目的】 熱変形歪を低減し帯電を防止する転写マスク
と、搭載するパタ−ン領域数を増やすために大型化した
転写マスクを機械的に移動して位置合わせすることので
きる電子線描画装置を提供する。
【構成】 転写マスクのパタ−ン領域を円形の凹部内に
形成して熱応力を円形の凹部に均一に作用させ熱変形歪
を低減する。また、転写マスクの両面に導電性薄膜を形
成し、これを接地することにより転写マスクの帯電を防
止し、帯電による電子線軌跡の歪を除去する。 さらに
電子線描画装置に転写マスク移動用のマスクステ−ジを
設け、大型化した転写マスクの位置合わせを機械的に行
う。
(57) [Abstract] [Purpose] Mechanically moving and aligning a transfer mask that reduces thermal deformation strain and prevents charging, and a transfer mask that is large in size to increase the number of pattern areas to be mounted. Provided is an electron beam drawing apparatus capable of performing the above. A pattern area of a transfer mask is formed in a circular concave portion to uniformly apply thermal stress to the circular concave portion to reduce thermal distortion. In addition, conductive thin films are formed on both surfaces of the transfer mask, and grounding this prevents the transfer mask from being charged, and removes the distortion of the electron beam trajectory due to the charging. Further, the electron beam drawing apparatus is provided with a mask stage for moving the transfer mask to mechanically position the enlarged transfer mask.
Description
【０００１】[0001]
【産業上の利用分野】本発明は電子線描画装置に関わ
り、とくに一括図形の転写マスクとそれを用いる電子線
描画装置に係る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam drawing apparatus, and more particularly to a collective pattern transfer mask and an electron beam drawing apparatus using the same.
【０００２】[0002]
【従来の技術】従来の転写マスクは特開平２−７６２１
６号公報に開示され、図６に示すように、シリコン等で
作られた転写マスク１７内に所定形状の電子線通過孔１
８а〜１８ｆ等を備えた矩形状パタ−ン領域を設け、各
矩形状パタ−ン領域の外辺部には１０〜４０μｍ厚さの
補強用リブを設け各電子線通過孔の形状精度を確保する
ようにしていた。2. Description of the Related Art A conventional transfer mask is disclosed in JP-A-2-7621.
As disclosed in Japanese Patent Publication No. 6 and as shown in FIG. 6, an electron beam passage hole 1 having a predetermined shape is formed in a transfer mask 17 made of silicon or the like.
A rectangular pattern area having 8 to 18 f, etc. is provided, and a reinforcing rib having a thickness of 10 to 40 μm is provided on the outer peripheral portion of each rectangular pattern area to ensure the shape accuracy of each electron beam passage hole. I was trying to do it.
【０００３】図７は従来の電子線描画装置の電子光学系
の構成図である。電子銃３からの電子線は第１絞り４に
より所定の形状に成形され、第１及び第２転写レンズ５
と６により絞られ、偏向器１９により転写マスク１７上
の所定の開口部に照射される。上記開口部を通過した電
子線は縮小レンズ８により縮小後、偏向器９により偏向
され、対物レンズ１０を介してウエハ１４上の所定位置
に照射される。FIG. 7 is a block diagram of an electron optical system of a conventional electron beam drawing apparatus. The electron beam from the electron gun 3 is shaped into a predetermined shape by the first diaphragm 4, and the first and second transfer lenses 5
And 6 and the deflector 19 irradiates a predetermined opening on the transfer mask 17. The electron beam that has passed through the opening is reduced by the reduction lens 8, is deflected by the deflector 9, and is irradiated to a predetermined position on the wafer 14 via the objective lens 10.
【０００４】[0004]
【発明が解決しようとする課題】上記従来技術において
は、各パタ−ン領域１８が薄いため電子線照射やその他
の原因により熱変形し易いという問題があった。。ま
た、転写マスク１７はシリコン材で作られるため、その
表面には酸化シリコン膜の絶縁膜が形成されて電気的な
接地が不安定となったり、また、帯電により形成される
電場により電子線の軌道が乱され電子線の転写像の歪が
大きくなるという問題があった。とくに、多数のパタ−
ン領域を配置した場合にはパタ−ンの開孔位置により電
子線偏向量が変化するので上記歪が大きくなっていた。
本発明の目的は、上記の問題を改善することのできる転
写マスクとそれを用いた電子線描画装置を提供すること
にある。In the above-mentioned prior art, there is a problem that the pattern regions 18 are thin, so that they are likely to be thermally deformed due to electron beam irradiation and other causes. . Further, since the transfer mask 17 is made of a silicon material, an insulating film of a silicon oxide film is formed on the surface of the transfer mask 17 to make electrical grounding unstable, and an electric field formed by charging causes an electron beam to pass through. There is a problem that the orbit is disturbed and the distortion of the transferred image of the electron beam becomes large. Especially many patterns
In the case of arranging the scanning area, the amount of electron beam deflection changes depending on the opening position of the pattern, so that the above distortion is large.
An object of the present invention is to provide a transfer mask and an electron beam drawing apparatus using the transfer mask which can solve the above problems.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に、パタ−ン領域内に複数の繰り返し描画用のパタ−ン
部を形成し、上記パタ−ン領域の複数を備えた電子線描
画装置用の転写マスクにおいて、上記各パタ−ン領域内
にそれぞれ複数の円筒または円錐状の凹部を設け、上記
パタ−ン領域内の各パタ−ン部を別個に上記複数の凹部
の一つの中に設けるようにする。また、上記パタ−ン領
域毎を個別に円筒または円錐状の凹部の中に設けるよう
にする。さらに、上記転写マスクの表面に厚み５μｍ以
下の金属膜を設けるようにする。また、電子線描画装置
内に転写マスクを搭載してその位置を移動することので
きるマスクステ−ジを設けるようにする。In order to solve the above problems, a plurality of pattern portions for repetitive drawing are formed in a pattern area, and electron beam drawing is provided with a plurality of the pattern areas. In a transfer mask for an apparatus, a plurality of cylindrical or conical recesses are provided in each of the pattern areas, and each pattern portion in the pattern area is separately provided in one of the plurality of recesses. To be installed in. Further, each of the pattern areas is individually provided in a cylindrical or conical recess. Further, a metal film having a thickness of 5 μm or less is provided on the surface of the transfer mask. Further, a transfer mask is mounted in the electron beam drawing apparatus, and a mask stage capable of moving the position is provided.
【０００６】[0006]
【作用】上記パタ−ン領域またはパタ−ン部を収容する
円形の凹部は電子線照射やその他の原因による熱応力を
凹部内に均一に作用させ熱変形歪が局部的に偏在するこ
とを防止する。また、転写マスクの表面に設けた導電性
薄膜は接地層を形成して、転写マスクの帯電と帯電によ
る電子線軌跡の歪を防止する。さらに電子線描画装置に
設けマスクステ−ジは、大型の転写マスクを搭載可能に
し、さらにその機械的な移動により転写マスクの位置合
わせを行う。The circular concave portion for accommodating the pattern area or the pattern portion uniformly applies thermal stress due to electron beam irradiation or other causes to the concave portion to prevent the thermal deformation strain from being locally unevenly distributed. To do. Further, the conductive thin film provided on the surface of the transfer mask forms a ground layer to prevent charging of the transfer mask and distortion of the electron beam trajectory due to charging. Further, the mask stage provided in the electron beam drawing apparatus allows a large-sized transfer mask to be mounted, and the mechanical movement of the mask allows the transfer mask to be aligned.
【０００７】[0007]
〔実施例 １〕図１は本発明による転写マスク実施例の
上面図である。シリコン板の転写マスク１には複数のパ
タ−ン領域１ａ〜１ｐを設け、各パタ−ン領域には図１
の下部に示すような電子線通過孔を有する複数のパタ−
ン部１ｂ1〜１ｂ5等をエッチングにより形成する。な
お、図１上部には各パタ−ン領域の形を４角で示した
が、これは上記複数のパタ−ン部１ｂ1〜１ｂ5の配列を
示すものであり、必ずしも４角形状に配列する必要はな
い。[Embodiment 1] FIG. 1 is a top view of an embodiment of a transfer mask according to the present invention. A plurality of pattern areas 1a to 1p are provided on the transfer mask 1 of a silicon plate, and each pattern area is formed as shown in FIG.
A plurality of patterns having electron beam passage holes at the bottom of the
The emission portion 1b 1 ~1b 5 etc. is formed by etching. In the upper part of FIG. 1, the shape of each pattern area is shown as a square, but this shows the arrangement of the plurality of pattern portions 1b 1 to 1b 5 and is not necessarily arranged in a square shape. do not have to.
【０００８】図２は図１の裏面図である。転写マスク１
の裏面より各パタ−ン部１ｂ1〜１ｂ5部分を丸型に掘り
下げてその厚さが１０〜４０μｍとなるように加工す
る。次いで転写マスク１の両面に蒸着等により金属薄膜
を形成する。上記金属薄膜は厚過ぎると加熱による膨
張、収縮によりクラックが入るので、その厚みを５μｍ
以下とするようにする。FIG. 2 is a rear view of FIG. Transfer mask 1
Each pattern from the back surface of - the thickness of the emission portion 1b 1 ~1b 5 parts delve into round is processed to a 10 to 40 [mu] m. Next, metal thin films are formed on both surfaces of the transfer mask 1 by vapor deposition or the like. If the metal thin film is too thick, cracks will be generated due to expansion and contraction due to heating.
Do the following:
【０００９】このようにすると、各パターン部１ｂ1〜
１ｂ5が薄い円形であるため、電子線照射やその他の原
因による熱応力が各パターン部の円形部に均一に作用す
るので電子線通過孔の熱変形の局部的偏在を防止してパ
ターン描画精度を高めることができる。また、転写マス
ク１の両面を導電性の金属薄膜で覆うため、転写マスク
１を確実に接地して帯電を防止できるので、帯電電位に
よる描画歪を防止することができる。In this way, each pattern portion 1b 1-
Since 1b 5 is a thin circular shape, thermal stress due to electron beam irradiation or other causes uniformly acts on the circular portion of each pattern portion, preventing localized uneven distribution of thermal deformation of the electron beam passage hole, and pattern drawing accuracy. Can be increased. Further, since both surfaces of the transfer mask 1 are covered with the conductive metal thin film, the transfer mask 1 can be surely grounded to prevent the charging, and thus the drawing distortion due to the charging potential can be prevented.
【００１０】〔実施例 ２〕図３は本発明による他の転
写マスク実施例の上面図である。図３においては一つの
パタ−ン領域を丸型に掘り下げた厚さが１０〜４０μｍ
の凹部の中に収めるようにする。したがって、電子線通
過孔を有する複数のパタ−ン部２ｂ0〜２ｂ5は上記丸型
の凹部内に収められる。次いで転写マスク１の両面に蒸
着等により金属薄膜を形成する。このようにすると、各
パターン部２ｂ1〜２ｂ5が円形の凹部内に収められるた
め、電子線照射やその他の原因による熱応力が上記円形
部に均一に作用するので電子線通過孔の熱変形が小さく
なり、パターン描画精度を高めることができる。また、
実施例１の場合と同様にして導電性金属薄膜の接地によ
り帯電による描画歪を防止することができる。[Embodiment 2] FIG. 3 is a top view of another embodiment of the transfer mask according to the present invention. In FIG. 3, the thickness obtained by digging one pattern area into a circular shape is 10 to 40 μm.
So that it fits in the recess of. Therefore, the plurality of pattern portions 2b 0 to 2b 5 having the electron beam passage holes are housed in the round concave portion. Next, metal thin films are formed on both surfaces of the transfer mask 1 by vapor deposition or the like. In this way, for each pattern unit 2b 1 ~2b 5 is housed in a circular recess, the thermal deformation of the electron beam passing holes since the thermal stress caused by electron beam irradiation and other causes acts uniformly on the circular portion Can be reduced, and the pattern drawing accuracy can be improved. Also,
As in the case of Embodiment 1, grounding of the conductive metal thin film can prevent drawing distortion due to charging.
【００１１】〔実施例 ３〕図４は上記実施例１と同２
にて説明した本発明の転写マスクを用いて電子線描画を
行う電子線描画装置の電子光学系の構成図である。図１
に示した転写マスク１には複数のパタ−ン領域１а〜１
ｐが設けられているので、その中の一つのパタ−ン領域
を選択して電子線描画を行う。しかし、図７に示した従
来装置では転写マスク１を固定してそのパタ−ン領域を
電子線偏向により選択するので、パタ−ン領域の選択範
囲が狭くなり、転写マスク１を大きくしてパタ−ン部の
数を増やすことができなかった。また、電子線偏向範囲
を拡大するとパタ−ン領域の周辺部における描画歪が増
大するという問題があった。これらの問題は図３に示し
た転写マスク２に付いても同様である。[Embodiment 3] FIG. 4 is the same as Embodiment 1 above.
FIG. 6 is a configuration diagram of an electron optical system of an electron beam drawing apparatus that performs electron beam drawing using the transfer mask of the present invention described in FIG. Figure 1
The transfer mask 1 shown in FIG.
Since p is provided, one of the pattern areas is selected and electron beam drawing is performed. However, in the conventional apparatus shown in FIG. 7, since the transfer mask 1 is fixed and the pattern area is selected by electron beam deflection, the selection range of the pattern area is narrowed and the transfer mask 1 is enlarged to make the pattern area larger. -The number of parts could not be increased. Further, there is a problem that the drawing distortion in the peripheral portion of the pattern area increases when the electron beam deflection range is expanded. These problems also apply to the transfer mask 2 shown in FIG.
【００１２】このため、本発明では転写マスク１や２等
を搭載するマスクステージ１５を設け、マスクステージ
１５をＸ、Ｙ方向に移動してパタ−ン部を選択するよう
にする。このようにすると、電子線１１を描画歪が最少
となる軌道中央部に固定したままパタ−ン部を選択する
ことができる。例えばパタ−ン領域１ｂを選択した場合
にはパタ−ン部ｂｏを電子線軌道の中央に設定し、第１
転写レンズ５と第２転写レンズ６と偏向器１９により電
子線を偏向して他のパタ−ン部１ｂ１〜１ｂ５を選択す
るようにする。なお、マスクステージ１５をマスクモー
タ７により移動するようにしてもよい。Therefore, in the present invention, the mask stage 15 on which the transfer masks 1 and 2 are mounted is provided, and the mask stage 15 is moved in the X and Y directions to select the pattern portion. By doing so, the pattern portion can be selected while the electron beam 11 is fixed to the central portion of the track where the drawing distortion is minimized. For example, when the pattern area 1b is selected, the pattern portion bo is set at the center of the electron beam trajectory, and the first
The transfer lens 5, the second transfer lens 6 and the deflector 19 deflect the electron beam to select the other pattern portions 1b1 to 1b5. The mask stage 15 may be moved by the mask motor 7.
【００１３】〔実施例 ４〕図５は本発明による他の電
子線描画装置実施例の構成図である。図５においては図
４に示した電子線描画装置内に絞りステージ１６を設
け、この上に第１絞り４を搭載して複数の絞り孔の中の
一つを選択できるようにして絞り交換頻度を少なくする
ので作業効率が向上する。[Embodiment 4] FIG. 5 is a block diagram of another embodiment of the electron beam drawing apparatus according to the present invention. In FIG. 5, a diaphragm stage 16 is provided in the electron beam drawing apparatus shown in FIG. 4, and the first diaphragm 4 is mounted on the diaphragm stage 16 so that one of a plurality of diaphragm holes can be selected and the diaphragm replacement frequency is changed. The work efficiency is improved because the number is reduced.
【００１４】[0014]
【発明の効果】本発明による電子線描画用の転写マスク
はパタ−ン領域を円形の凹部内に形成するので、電子線
通照射時のパタ−ン部の熱応力が円形の凹部に均一に作
用して熱変形を低減してパターン描画精度を向上するこ
とができる。また、転写マスクの両面に導電性薄膜を形
成するので、この導電性薄膜の接地により転写マスクの
帯電を防止し、帯電による電子線軌跡の歪を除いて描画
精度を向上することができる。さらに、本発明による電
子線描画装置は転写マスクを搭載して移動することので
きるマスクステ−ジを設けるの転写マスクのサイズを大
型化してパタ−ン領域数を増やすることにより、転写マ
スクの交換頻度を下げて作業効率を高め、さらに描画の
種類数を増やすことができる。Since the transfer mask for electron beam writing according to the present invention forms the pattern region in the circular concave portion, the thermal stress of the pattern portion during electron beam irradiation is uniform in the circular concave portion. By acting, the thermal deformation can be reduced and the pattern drawing accuracy can be improved. Further, since the conductive thin films are formed on both sides of the transfer mask, charging of the transfer mask can be prevented by grounding the conductive thin film, and the drawing accuracy can be improved by eliminating the distortion of the electron beam trajectory due to the charging. Further, the electron beam writing apparatus according to the present invention is provided with a transfer mask and is provided with a movable mask stage. By increasing the size of the transfer mask and increasing the number of pattern areas, the transfer mask can be replaced. The frequency can be reduced to improve work efficiency, and the number of types of drawing can be increased.
【図１】本発明による転写マスク実施例の平面図とその
パタ−ン領域の拡大図である。FIG. 1 is a plan view of an embodiment of a transfer mask according to the present invention and an enlarged view of a pattern area thereof.
【図２】図１の裏側の部分拡大図である。FIG. 2 is a partially enlarged view of the back side of FIG.
【図３】本発明による他の転写マスク実施例の平面図と
そのパタ−ン領域の拡大図である。FIG. 3 is a plan view of another embodiment of a transfer mask according to the present invention and an enlarged view of a pattern area thereof.
【図４】本発明による電子線描画装置実施例の電子光学
系の構成図である。FIG. 4 is a configuration diagram of an electron optical system of an embodiment of an electron beam drawing apparatus according to the present invention.
【図５】本発明による他の電子線描画装置実施例の電子
光学系の構成図である。FIG. 5 is a configuration diagram of an electron optical system of another embodiment of the electron beam drawing apparatus according to the present invention.
【図６】従来の転写マスクの部分斜視図である。FIG. 6 is a partial perspective view of a conventional transfer mask.
【図７】従来の電子線描画装置の電子光学系の構成図で
ある。FIG. 7 is a configuration diagram of an electron optical system of a conventional electron beam drawing apparatus.
１，２、１７…転写マスク，１ａ〜１ｐ，２ａ〜２ｐ…
パターン領域，１ｂ0〜１ｂ5、２ｂ0〜２ｂ5…パターン
部、４…第１絞り、５…第１転写レンズ、６…第２転写
レンズ、７…マスクモ−タ、１５…マスクステージ、１
６…絞りステ−ジ、１９…偏向器。1, 2, 17 ... Transfer mask, 1a-1p, 2a-2p ...
Pattern regions, 1b 0 ~1b 5, 2b 0 ~2b 5 ... pattern section, 4 ... first diaphragm, 5 ... first transfer lens, 6 ... second transfer lens, 7 ... Masukumo - motor, 15 ... mask stage 1
6 ... Aperture stage, 19 ... Deflector.
Claims (4)
のパタ−ン部を形成し、上記パタ−ン領域の複数を備え
た電子線描画装置用の転写マスクにおいて、上記各パタ
−ン領域内にそれぞれ複数の円筒または円錐状の凹部を
設け、上記パタ−ン領域内の各パタ−ン部を個別に上記
複数の凹部の一つの中に設けるようにしたことをことを
特徴とする転写マスク。1. A transfer mask for an electron beam lithographic apparatus, comprising a plurality of pattern areas for repetitive drawing formed in a pattern area, wherein each of the patterns is provided. A plurality of cylindrical or conical recesses are provided in the respective regions, and each pattern portion in the pattern region is individually provided in one of the plurality of recesses. Transfer mask.
のパタ−ン部を形成し、上記パタ−ン領域の複数を備え
た電子線描画装置用の転写マスクにおいて、複数の円筒
または円錐状の凹部を設け、上記パタ−ン領域を別個に
上記複数の凹部の一つの中に設けるようにしたことをこ
とを特徴とする転写マスク。2. A transfer mask for an electron beam drawing apparatus, comprising a plurality of pattern areas for repetitive drawing formed in a pattern area, wherein a plurality of cylinders or cones are provided. A transfer mask, wherein a pattern-shaped recess is provided, and the pattern region is separately provided in one of the plurality of recesses.
表面に厚み５μｍ以下の金属膜を設けたことをことを特
徴とする転写マスク。3. A transfer mask, wherein a metal film having a thickness of 5 μm or less is provided on the surface of the transfer mask according to claim 1.
搭載してその位置を移動することのできるマスクステ−
ジを備えたことを特徴とする電子線描画装置。4. An electron beam drawing apparatus comprising a transfer mask, a mask stage capable of moving the position of the transfer mask.
An electron beam drawing apparatus characterized in that the electron beam drawing apparatus is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1342893A JPH06230562A (en) | 1993-01-29 | 1993-01-29 | Transfer mask and electron beam drawing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1342893A JPH06230562A (en) | 1993-01-29 | 1993-01-29 | Transfer mask and electron beam drawing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06230562A true JPH06230562A (en) | 1994-08-19 |
Family
ID=11832874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1342893A Pending JPH06230562A (en) | 1993-01-29 | 1993-01-29 | Transfer mask and electron beam drawing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06230562A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2367908A (en) * | 2000-09-25 | 2002-04-17 | Univ Houston | Template mask |
| JP2006216544A (en) * | 2005-02-03 | 2006-08-17 | Samsung Sdi Co Ltd | Conductive polymer pattern film and patterning method thereof, organic electroluminescent device using the same, and method of manufacturing the same |
-
1993
- 1993-01-29 JP JP1342893A patent/JPH06230562A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2367908A (en) * | 2000-09-25 | 2002-04-17 | Univ Houston | Template mask |
| JP2002202590A (en) * | 2000-09-25 | 2002-07-19 | Univ Of Houston | Writing method using multi-generation mask |
| JP2006216544A (en) * | 2005-02-03 | 2006-08-17 | Samsung Sdi Co Ltd | Conductive polymer pattern film and patterning method thereof, organic electroluminescent device using the same, and method of manufacturing the same |
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