JPH06238559A - Single-sided surface polishing - Google Patents
Single-sided surface polishingInfo
- Publication number
- JPH06238559A JPH06238559A JP13172992A JP13172992A JPH06238559A JP H06238559 A JPH06238559 A JP H06238559A JP 13172992 A JP13172992 A JP 13172992A JP 13172992 A JP13172992 A JP 13172992A JP H06238559 A JPH06238559 A JP H06238559A
- Authority
- JP
- Japan
- Prior art keywords
- carrier
- substrate
- polishing
- cloth
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は片面研摩方法、特にはガ
ラス基板などの端面部におけるクラック、割れ、傷など
の発生を皆無にすると共に、研摩材の被加工物端面への
付着を防止した片面研摩方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention eliminates the occurrence of cracks, cracks, scratches and the like on the one-sided polishing method, particularly on the end face of a glass substrate and prevents the adhesion of the polishing material to the end face of the workpiece. It relates to a single-sided polishing method.
【0002】[0002]
【従来の技術】従来一般的に行なわれている片面研摩方
法は、被加工物にプレッシャープレートに被加工物が納
まるホールをあけたキャリアを張り付け、酸化セリウム
などの研摩材を水に懸濁させた研摩液をかけながら研摩
加工するという方法で行なわれているが、液晶用大型マ
スク用基板のように無欠陥、高精度が要求される場合に
はプレッシャープレート側に軟質の布を張り付けるとい
う方法も提案されている(特願平3-317539号明細書参
照)。2. Description of the Related Art In the conventional one-sided polishing method, a carrier having a hole for accommodating the work piece is attached to a work piece, and a polishing material such as cerium oxide is suspended in water. It is performed by applying polishing liquid while applying polishing liquid, but when defect-free and high precision is required, such as for large LCD mask substrates, a soft cloth is attached to the pressure plate side. A method has also been proposed (see Japanese Patent Application No. 3-317539).
【0003】しかし、この被加工物がガラスのような脆
性材料の角型基板である場合には、基板外周部にクラッ
ク、割れ、傷などの欠陥の発生する確率が非常に高いと
いう欠点があり、これにはまたこの際に発生したガラス
片やキャリアの摩耗くずによって基板表面にも傷が発生
するという不利もあるが、これは研摩中に基板が受ける
力の方向が変化することにより基板がキャリア内で安定
した位置に動こうとすることに原因がある。However, when the work piece is a rectangular substrate made of a brittle material such as glass, there is a drawback that defects such as cracks, breaks and scratches are very likely to occur on the outer peripheral portion of the substrate. However, this also has the disadvantage that the glass chips and abrasion debris of the carrier generated at this time also damage the substrate surface, but this is because the direction of the force that the substrate receives during polishing changes the substrate. It is caused by trying to move to a stable position in the carrier.
【0004】角型基板の片面研摩の場合、キャリアは図
3のように回転しているので、キャリア内の基板の受け
る力の方向はほぼ一定の角速度で図4のように変化して
おり、したがって基板のキャリア内での移動は図4に示
したように基板の受ける力が変る度にキャリア内で基板
は別々の方向に移動を起こし、キャリア側面に衝突を起
こす。その結果、基板端面にクラックなどの欠陥が発生
したり、基板からのガラス片放出や、キャリア摩耗くず
の放出が起こるためである。In the case of one-side polishing of a square substrate, the carrier is rotating as shown in FIG. 3, so that the direction of the force received by the substrate in the carrier changes at a substantially constant angular velocity as shown in FIG. Therefore, as shown in FIG. 4, the movement of the substrate in the carrier causes the substrate to move in different directions in the carrier each time the force received by the substrate changes, and collides with the side surface of the carrier. As a result, defects such as cracks occur on the end face of the substrate, glass fragments are emitted from the substrate, and carrier abrasion debris is emitted.
【0005】また、これについてはクラックや割れ、傷
などの欠陥が発生しない場合でも、基板とキャリアがか
なりの力でぶつかり合うことから、研摩材が基板端面の
微妙な凹凸に押し込められてしまうという現象により、
研摩後の基板を洗浄する際、この押し込められた研摩材
が徐々に放出されて基板の洗浄に大幅な時間を要し、且
つ清浄に仕上げることが難しいという欠点もあった。こ
のため、従来はキャリアと基板とのクリアランスをでき
る限り小さくすることで基板が力を受ける時間を短く
し、基板がキャリアに衝突する際の衝撃力を極力小さく
するという対策や、基板自体に対衝撃性をもたせるため
に基板端面を鏡面に加工するということも行なわれてい
る。Even if no cracks, cracks, scratches, or other defects occur, the substrate and the carrier collide with each other with a considerable force, so that the abrasive is pressed into the fine irregularities on the end face of the substrate. Due to the phenomenon
When the substrate after polishing is cleaned, the abrasive material pushed in is gradually released, which requires a considerable time for cleaning the substrate, and it is difficult to finish the substrate cleanly. For this reason, conventionally, the clearance between the carrier and the substrate is made as small as possible to shorten the time for which the substrate receives a force, and the impact force when the substrate collides with the carrier is minimized. It is also practiced to process the end surface of the substrate into a mirror surface in order to provide impact resistance.
【0006】[0006]
【発明が解決しようとする課題】しかし、キャリアの加
工精度を向上させてキャリアと基板とのクリアランスを
極力小さくした場合でも、クラック、割れ、傷およびキ
ャリア摩耗くずによる表面欠陥の発生を完全になくすこ
とは難しく、基板端面部分に研摩材の押し込められるこ
とを防止することはできず、これは基板端面を鏡面にし
た場合でもクラック、割れ、傷およびキャリア摩耗くず
による表面欠陥の発生はその頻度を低減させる程度で、
これを完全に抑えることはできない。However, even if the machining accuracy of the carrier is improved and the clearance between the carrier and the substrate is minimized, the occurrence of surface defects due to cracks, cracks, scratches and carrier abrasion debris is completely eliminated. It is difficult to prevent the abrasive material from being pushed into the edge of the substrate, and even if the edge of the substrate is made to be a mirror surface, the occurrence of surface defects due to cracks, cracks, scratches and carrier abrasion debris is less frequent. Just to reduce
This cannot be completely suppressed.
【0007】また、これは基板端面を鏡面とすること
と、キャリアと基板とのクリアランスを極力小さくする
方法とを併用しても、キャリアと基板とのこすれ傷が発
生し、その傷に研摩材が押し込まれたり、その傷部分よ
りクラック、割れが発生する場合があるし、キャリア摩
耗くずの発生もなくすことができず、さらに基本加工、
とくに洗浄において、人手により取扱う場合には端面を
鏡面に加工した基板は非常に滑り易く、危険であるとい
う別の問題も生じてくるし、基板端面を鏡面とするため
にはかなりの時間を要し、経済的に不利になるという欠
点もある。[0007] Further, even if the end surface of the substrate is made to be a mirror surface and the method of minimizing the clearance between the carrier and the substrate is used together, a scratch is generated between the carrier and the substrate, and an abrasive material is attached to the scratch. It may be pushed in, cracks may occur from the scratched part, carrier wear debris may not be generated, and basic processing,
Particularly in cleaning, when handling by hand, the substrate whose end surface is processed into a mirror surface is very slippery, which poses another problem that it is dangerous, and it takes a considerable time to make the substrate end surface into a mirror surface. However, there is a disadvantage that it becomes economically disadvantageous.
【0008】[0008]
【課題を解決するための手段】本発明はこのような不
利、欠点を解決した片面摩耗方法に関するものであり、
これはプレッシャープレートに取り付けられたキャリア
内に布を張り付けた後、被加工物を入れて研摩を行なう
片面研摩方法において、キャリアと被加工物が接触する
キャリア表面に沿って一定の深さの凹みを設け、且つこ
の凹み部分よりキャリア側面部にかけて軟質の布を張り
付けたキャリアを使用することを特徴とするものであ
る。SUMMARY OF THE INVENTION The present invention relates to a one-sided wear method which solves the above disadvantages and drawbacks.
This is a one-sided polishing method in which cloth is attached to the carrier attached to the pressure plate, and then the workpiece is put into the carrier for polishing. The carrier is provided with a soft cloth attached to the side surface of the carrier from the recessed portion.
【0009】すなわち、本発明者らは基板の端面部にク
ラック、割れ、傷および表面欠陥などの欠陥発生を皆無
にする片面研摩方法を開発すべく種々検討した結果、プ
レッシャープレートに取りつけられたキャリア内に布を
張り付けると共に、キャリア端面よりキャリア表面に沿
って一定深さの凹みを設け、この凹部よりキャリア側面
部に軟質の布を張り付けたキャリアを使用すると、基板
端面に発生するクラック、割れなどの欠陥発生を皆無に
することができるし、摩耗くずが発生した場合でも基板
表面に欠陥を発生させることがなくなるということを見
出し、ここに使用する軟質布の種類、凹みの深さ、キャ
リアと被加工物とのクリアランスなどについての研究を
進めて本発明を完成させた。以下にこれをさらに詳述す
る。That is, the inventors of the present invention have conducted various studies to develop a single-sided polishing method that eliminates the occurrence of defects such as cracks, cracks, scratches and surface defects on the end surface of the substrate, and as a result, carriers attached to the pressure plate have been investigated. With the cloth stuck inside, a recess with a certain depth is provided along the carrier surface from the carrier end surface, and when using a carrier with a soft cloth stuck to the carrier side surface from this recess, the cracks and cracks generated on the substrate end surface It has been found that defects such as, for example, can be eliminated, and that defects do not occur on the substrate surface even if abrasion debris occurs, and the types of soft cloth used here, the depth of the dents, and the carrier The present invention has been completed by conducting research on the clearance between the workpiece and the workpiece. This will be described in more detail below.
【0010】[0010]
【作用】本発明は片面研摩方法に関する物であり、これ
はプレッシャープレートに取りつけられたキャリアに布
を張り付けて片面研摩を行なうにあたり、キャリアと被
加工物が接触するキャリア端面よりキャリア表面に沿っ
て一定深さの凹部を設け、かつこの凹み部品にキャリア
側面部にかけて軟質の布を張り付けたキャリアを使用す
ることを特徴とするものであるが、これによれば基板端
面に発生するクラック、割れなどの欠陥発生を皆無にす
ることができ、摩耗くずによる基板表面の欠陥発生を防
止することができるという有利性が与えられる。The present invention relates to a one-sided polishing method, which is used for applying one-sided polishing to a carrier attached to a pressure plate by carrying out one-side polishing from the end surface of the carrier where the carrier and the workpiece come into contact with each other. It is characterized by using a carrier with a recess of a certain depth and sticking a soft cloth to the side surface of the carrier on this recessed part. It is possible to completely eliminate the occurrence of defects and to prevent the occurrence of defects on the substrate surface due to abrasion debris.
【0011】本発明の片面研摩方法はまず先の提案にし
たがってプレッシャープレートに基板寸法より大きめの
穴をあけたキャリアを張り付け、そのキャリアのトップ
プレートに布を張り付けるのであるが、この布は圧縮弾
性率が3〜80%のもので発泡層のあるスエードタイプの
ものとすることがよいことから、発泡ポリウレタンの不
織布からなるものとすればよいが、このものはキャリア
内に張られていても、被加工物の上に張られていてもよ
い。According to the above-mentioned proposal, the single-sided polishing method of the present invention firstly attaches a carrier having a hole larger than the substrate size to a pressure plate and attaches a cloth to the top plate of the carrier. Since it is preferable to use a suede type having an elastic modulus of 3 to 80% and a foam layer, it may be made of a polyurethane non-woven fabric, but this may be stretched in a carrier. , May be stretched on the work piece.
【0012】ここに使用されるキャリアは水により浸さ
れないものとすることから一般には塩化ビニル樹脂製の
ものとすればよいが、このものはこのキャリアにキャリ
アと被加工物とが接触するキャリア端面部よりキャリア
表面に沿って一定深さ、例えば深さが 0.5〜1.5mm の凹
みを設け、この凹み部分よりキャリア側面部にかけて軟
質の布を張り付けたものとされる。この凹みは図1に示
したように基板と接するキャリア側面より外周にかけて
ある程度の幅をもつものとされるが、この幅は5mm以下
では研摩中に布の剥れる確率が高くなって安定した研摩
が出来なくなるので、5mm以上、好ましくは10mm以上と
することがよい。Since the carrier used here is not soaked with water, it may be generally made of vinyl chloride resin, which is the end face of the carrier with which the carrier and the workpiece are in contact. A concave portion having a certain depth, for example, a depth of 0.5 to 1.5 mm, is provided along the surface of the carrier from the portion, and a soft cloth is attached from the concave portion to the side surface of the carrier. As shown in FIG. 1, this recess has a certain width from the side surface of the carrier in contact with the substrate to the outer periphery. If this width is 5 mm or less, the probability of peeling of the cloth during polishing is high and stable polishing is achieved. Therefore, the thickness is preferably 5 mm or more, more preferably 10 mm or more.
【0013】また、このキャリアには布を張り付けるた
めの穴が設けられるが、この穴の寸法は布を張り付けた
基板を入れたときに適宜の隙間が生ずるようにすること
が必要とされる。しかし、この隙間はそれが1mm以下で
あると研摩終了後の基板端面が半鏡面とならず、洗浄で
の効果が半減するし、4mm以上であるとキャリア端面部
分の布の摩耗が激しくなり、極端な場合には布が無くな
ってキャリアとの接触が起こり、基板端面部にクラック
の発生が起こるので、これは1mm〜4mmとすることがよ
い。Further, this carrier is provided with a hole for adhering the cloth, and it is necessary that the size of the hole is such that an appropriate gap is formed when the substrate on which the cloth is adhered is put. . However, if this gap is less than 1 mm, the end surface of the substrate after polishing will not be a semi-mirror surface, and the effect of cleaning will be halved. If it is more than 4 mm, the wear of the cloth on the end surface of the carrier will be severe. In an extreme case, the cloth disappears and contact with the carrier occurs, and cracks occur at the end face of the substrate. Therefore, it is preferable to set this to 1 mm to 4 mm.
【0014】また、本発明ではこの凹み部分よりキャリ
ア側面部にかけて布を張り付けたキャリアが使用される
のであるが、布の張り付けは布がキャリアより突出して
いると布が研摩中に剥離し易くなるので、これはキャリ
アから突出しないようになることがよい。この布は耐水
性があり、摩耗くずによって基板表面に傷が発生しない
ようにするために軟質の布とすることが必要とされる。
なお、この布としては好ましくは研摩に使用する上記し
た発泡ポリウレタンの不織布と同質のものとすることが
よいが、この張り付けた布は布の剥離を防止する目的
で、上記した凹み部分よりキャリア端体にかけて一体と
なるようにすることがよい。Further, according to the present invention, a carrier is used in which the cloth is adhered from the recessed portion to the side surface of the carrier. When the cloth is adhered, the cloth is easily peeled off during polishing if the cloth is projected from the carrier. So it should not stick out of the carrier. The fabric is water resistant and needs to be a soft fabric to prevent scratches on the substrate surface from abrasion debris.
The cloth is preferably made of the same quality as the above-mentioned non-woven polyurethane foam used for polishing, but this cloth is attached to the end of the carrier rather than the recessed portion in order to prevent the cloth from peeling. It is good to put it on your body and become one.
【0015】[0015]
【実施例】次に本発明の実施例、比較例をあげる。 実施例1 オスカー型片面研摩装置[ラップマスター (株) 製]を
使用することとし、このキャリアとして直径 600mmφの
塩化ビニル樹脂製の板の中心に 402mm角の穴をあけ、こ
の穴の周辺に10mm幅で深さ 0.6mmの凹みをつけ、基板表
面の傷発生防止のためにトッププレート側に布NF−20
0 [ローデルニッタ (株) 製]を 402mmに切断して張り
付け、さらに凹み部分からキャリア端面にかけて厚さ
0.5mmの発泡ウレタン布・40フィルム[ローデルニッタ
(株) 製]を張り付けたものを使用することとした。EXAMPLES Examples and comparative examples of the present invention will be given below. Example 1 An Oscar type single-side polishing machine [made by Lapmaster Co., Ltd.] was used, and a 402 mm square hole was made in the center of a vinyl chloride resin plate having a diameter of 600 mmφ as this carrier, and 10 mm was formed around this hole. A dent with a width of 0.6 mm is made, and cloth NF-20 is placed on the top plate side to prevent scratches on the substrate surface.
0 [Rodel Nitta Co., Ltd.] is cut to 402mm and attached, and the thickness is further extended from the recess to the end face of the carrier.
0.5mm urethane foam cloth / 40 film [Roder Nitta
Manufactured by K.K.] was used.
【0016】ついでこの片面研摩装置で、 400mm角×6
mm厚でその基板の端面部分を遊離砥粒GC#800 で仕上
げた合成石英ガラス基板を、平均粒径が1μmの酸化セ
リウム研摩材を水に10%懸濁させた研摩材を用いて、お
もて面、裏面交互に30分づつ、これを6回繰返して研摩
した。Then, using this single-sided polishing machine, 400 mm square × 6
A synthetic quartz glass substrate with a thickness of mm, the end surface of which was finished with free abrasive grains GC # 800, was prepared by using an abrasive material prepared by suspending 10% of cerium oxide abrasive material with an average particle diameter of 1 μm in water. The front side and the back side were alternately alternated for 30 minutes, and this was repeated 6 times for polishing.
【0017】なお、この実験は上記した条件で5枚の基
板を処理した後、10槽の超音波洗浄槽を用いて洗浄した
が、得られた基板についての端面部分のクラックなどの
欠陥および基板表面の欠陥、汚れについて12万ルクスの
照度下で目視検査したところ、後証する表1に示したと
おりの結果が得られた。In this experiment, five substrates were processed under the above-mentioned conditions and then cleaned using an ultrasonic cleaning tank of 10 tanks. When the surface defects and stains were visually inspected under an illuminance of 120,000 lux, the results shown in Table 1 below were obtained.
【0018】実施例2 実施例1におけるキャリアの穴の大きさを 405mmとした
ほかは実施例1と同じように処理して得た基板について
検査したところ後記による表1に示したとおりの結果が
得られた。Example 2 A substrate obtained by processing in the same manner as in Example 1 except that the hole size of the carrier in Example 1 was 405 mm was inspected and the results shown in Table 1 below were obtained. Was obtained.
【0019】実施例3 実施例1における超音波洗浄槽の数を10槽から5槽とし
たほかは実施例1と同様に処理して得た基板について検
査したところ、後記する表1に示したとおりの結果が得
られた。Example 3 A substrate obtained by the same treatment as in Example 1 was inspected except that the number of ultrasonic cleaning baths in Example 1 was changed from 10 to 5, and the results are shown in Table 1 below. The following results were obtained.
【0020】比較例1 実施例1においてキャリアに軟質の布を張り付けなかっ
たかほかは実施例1と同様に処理して得た基板について
検査したところ、後記する表1に示したとおりの結果が
得られた。Comparative Example 1 A substrate obtained by treating in the same manner as in Example 1 except that a soft cloth was not attached to the carrier in Example 1 was inspected, and the results shown in Table 1 below were obtained. Was given.
【0021】比較例2 比較例1における基板の端面部分を鏡面加工したものと
したほかは上記した比較例1と同じように処理して得た
基板について検査したところ、後記する表1に示したと
おりの結果が得られた。Comparative Example 2 A substrate obtained by processing in the same manner as in Comparative Example 1 described above except that the end surface portion of the substrate in Comparative Example 1 was mirror-finished was inspected, and the results are shown in Table 1 below. The following results were obtained.
【0022】比較例3 実施例1における基板の端面部分を鏡面加工したものと
し、キャリアの穴の大きさを 400.5mmとすると共に、キ
ャリアへの軟質の布の張り付けずを行なわなかったほか
は実施例と同じように処理して得た基板について検査し
たところ、後記する表1に示したとおりの結果が得られ
た。COMPARATIVE EXAMPLE 3 Except that the end surface portion of the substrate in Example 1 was mirror-finished, the hole size of the carrier was 400.5 mm, and no soft cloth was attached to the carrier. When a substrate obtained by treating in the same manner as the example was inspected, the results shown in Table 1 below were obtained.
【0023】比較例4〜5 実施例1におけるキャリアの穴の大きさを 406mmとする
(比較例4)か、 401.5mmとする(比較例5)ほかは実
施例1と同様に処理して得た基板を検査したところ、後
記する表1に示したとおりの結果が得られた。Comparative Examples 4 to 5 Obtained by treating in the same manner as in Example 1 except that the hole size of the carrier in Example 1 is 406 mm (Comparative Example 4) or 401.5 mm (Comparative Example 5). When the obtained substrate was inspected, the results shown in Table 1 below were obtained.
【0024】比較例6〜7 実施例1におけるキャリアの凹みの幅を5mmとする(比
較例6)か、凹みの深さを0.30mmとする(比較例7)ほ
かは実施例1と同様に処理し得た基板を検査したとこ
ろ、後記する表1に示したとおりの結果が得られた。Comparative Examples 6 to 7 Similar to Example 1 except that the width of the recess of the carrier in Example 1 is set to 5 mm (Comparative Example 6) or the depth of the recess is set to 0.30 mm (Comparative Example 7). When the processed substrate was inspected, the results shown in Table 1 below were obtained.
【0025】実施例1において使用している軟質の布を
通常の織布(木綿)としたほかは実施例1と同様に処理
して得た基板について検査したところ、下記の表1に示
したとおりの結果が得られた。Substrates obtained by the same treatment as in Example 1 were examined except that the soft cloth used in Example 1 was a normal woven cloth (cotton), and the results are shown in Table 1 below. The following results were obtained.
【0026】[0026]
【表1】 [Table 1]
【0027】[0027]
【発明の効果】本発明は片面研摩方法に関するものであ
り、これは前記したようにプレッシャープレートに取り
付けられたキャリア内に布を張り付けた後、被加工物を
入れて研摩を行なう片面研摩方法において、キャリアと
被加工物が接触するキャリア端面よりキャリア表面に沿
って一定深さの凹みを設け、且つこの凹み部分よりキャ
リア側面部にかけ軟質の布を張り付けたキャリアを使用
することを特徴とするものであり、これによれば被処理
物の端面部におけるクラック、割れ、傷などの発生を皆
無にすると共に、研摩材の被加工物端面への付着防止す
ることができるとういう有利性が与えられる。INDUSTRIAL APPLICABILITY The present invention relates to a single-sided polishing method in which a cloth is attached to a carrier attached to a pressure plate as described above, and then a work piece is put in to perform polishing. Characterized by using a carrier in which a recess having a certain depth is provided along the carrier surface from the end face of the carrier where the carrier and the workpiece come into contact, and a soft cloth is attached to the side face of the carrier from the recessed part. According to this, it is possible to prevent the occurrence of cracks, breaks, scratches, etc. at the end surface of the object to be processed, and to prevent the adhesion of the abrasive to the end surface of the object to be processed. .
【図1】 本発明で使用されるキャリア表面に設けられ
る凹み形成の形態図で(a)はその平面図、(b)はそ
の部分断面図を示したものである。FIG. 1A is a plan view of a recess formed on the surface of a carrier used in the present invention, and FIG. 1B is a partial cross-sectional view thereof.
【図2】 本発明の実施例1で使用されるキャリアの形
態図で、(a)はその平面図、(b)はその凹みの部分
断面を示したものである。2A and 2B are configuration diagrams of a carrier used in Embodiment 1 of the present invention, in which FIG. 2A is a plan view thereof, and FIG.
【図3】 公知の片面研摩におけるトッププレートの回
転による角速度の変化の平面図を示したものである。FIG. 3 is a plan view showing changes in angular velocity due to rotation of a top plate in known single-sided polishing.
【図4】 公知の片面研摩における角形基板のキャリア
内での移動を示した平面図である。FIG. 4 is a plan view showing movement of a rectangular substrate in a carrier in known single-sided polishing.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成5年11月9日[Submission date] November 9, 1993
【手続補正1】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図面の簡単な説明[Name of item to be corrected] Brief description of the drawing
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図面の簡単な説明】[Brief description of drawings]
【図1】 本発明で使用されるキャリア表面に設けられ
る凹み形成の形態の平面図およびその部分断面図を示し
たものである。[1] shows a plan view and a partial cross-sectional view of the shape states of the recess formed is provided on the carrier surface to be used in the present invention.
【図2】 本発明の実施例1で使用されるキャリアの形
態の平面図およびその凹みの部分断面図を示したもので
ある。FIG. 2 Shape of carrier used in Example 1 of the present invention
It is the top view of a state and the partial sectional view of the dent.
【図3】 公知の片面研摩におけるトッププレートの回
転による角速度の変化の平面図を示したものである。FIG. 3 is a plan view showing changes in angular velocity due to rotation of a top plate in known single-sided polishing.
【図4】 公知の片面研摩における角形基板のキャリア
内での移動を示した平面である。FIG. 4 is a plan view showing movement of a rectangular substrate in a carrier in known single-sided polishing.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 滝田 政俊 新潟県中頚城郡頚城村大字西福島28番地の 1 信越化学工業株式会社合成技術研究所 内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masatoshi Takita 28, Nishi-Fukushima, Kubiki-mura, Nakakubiki-gun, Niigata Prefecture 1 Shin-Etsu Chemical Co., Ltd.
Claims (5)
ャリア内に布を張り付けた後、被加工物を入れて研摩を
行なう片面研摩方法において、キャリアと被加工物が接
触するキャリア端面よりキャリア表面に沿って一定の深
さの凹みを設け、且つこの凹み部分よりキャリア側面部
にかけ軟質の布を張り付けたキャリアを使用することを
特徴とする片面研摩方法。1. A one-sided polishing method in which a cloth is attached to a carrier attached to a pressure plate, and then a workpiece is put into the carrier for polishing. A single-sided polishing method comprising using a carrier having a recess having a constant depth and having a soft cloth attached to the side surface of the carrier from the recess.
る請求項1に記載した片面研摩方法。2. The single-sided polishing method according to claim 1, wherein the soft cloth is a foamed polyurethane non-woven fabric.
た片面研摩方法。3. The single-sided polishing method according to claim 1, wherein the work piece is glass.
のである請求項に記載した片面研摩方法。4. The single-sided polishing method according to claim 4, wherein the depth of the depression is larger than the thickness of the soft cloth.
mm以上4mm以下である請求項1に記載した片面研摩方
法。5. The clearance between the carrier and the workpiece is 1
The single-sided polishing method according to claim 1, which is not less than 4 mm and not more than mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13172992A JP3078110B2 (en) | 1992-04-24 | 1992-04-24 | Single side polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13172992A JP3078110B2 (en) | 1992-04-24 | 1992-04-24 | Single side polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06238559A true JPH06238559A (en) | 1994-08-30 |
| JP3078110B2 JP3078110B2 (en) | 2000-08-21 |
Family
ID=15064838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13172992A Expired - Lifetime JP3078110B2 (en) | 1992-04-24 | 1992-04-24 | Single side polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3078110B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012152849A (en) * | 2011-01-26 | 2012-08-16 | Konica Minolta Holdings Inc | Polishing device |
| CN106670957A (en) * | 2015-11-10 | 2017-05-17 | 有研半导体材料有限公司 | Method for polishing ultrathin silicon ring |
-
1992
- 1992-04-24 JP JP13172992A patent/JP3078110B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012152849A (en) * | 2011-01-26 | 2012-08-16 | Konica Minolta Holdings Inc | Polishing device |
| CN106670957A (en) * | 2015-11-10 | 2017-05-17 | 有研半导体材料有限公司 | Method for polishing ultrathin silicon ring |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3078110B2 (en) | 2000-08-21 |
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