JPH06236842A - Electron beam exposure system - Google Patents

Abstract

(57) [Summary] (Modified) [Purpose] Simultaneously realize the area-shaped electron beam generation function and the function to freely control the cross-sectional shape of the electron beam bundle according to the drawing figure data, and An electron beam exposure system that can perform pattern writing while achieving high throughput. A planar or two-dimensionally arranged electron beam generation source 11 divides graphic information to be drawn into pixel units, and outputs an on / off signal of an electron beam for each pixel according to the presence or absence of the graphic information. A graphic information processing unit 12 to be generated and a shape control unit 13 for exciting the electron beam bundle 18 into a desired shape according to the on / off signal are arranged. The beam bundle is
The electron gun 14 accelerates the sample 19 with a predetermined acceleration voltage, and the electron lens 15 reduces and projects the sample 19 on the sample. In order to move the position of the beam bundle on the sample, a deflector 16 is provided in front of the electron lens or on the converging field formed by the electron lens.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention A semiconductor manufacturing apparatus for writing an LSI pattern on a wafer, which is capable of achieving high throughput regardless of the pattern, and a semiconductor element using this electron beam exposure apparatus. Manufacturing method.

[0002]

2. Description of the Related Art Conventionally, in order to realize an electron beam exposure apparatus which achieves high throughput and is suitable for mass production, Japanese Patent Laid-Open No. 59-1 has been proposed.
69131, the Cell PJ method as shown in JP-A-61-183926, and JP-A-60-15722.
A method such as the electron beam stepper shown in FIG. 1 has been adopted. The feature of these methods is to transfer a specific pattern or a pattern of the entire LSI onto a sample all at once, thereby increasing the throughput of the electron beam exposure apparatus, which was low because it was originally drawn by one stroke. In other words, by increasing the area of the electron beam cross-section and increasing the area, the number of shots of the electron beam on the sample, the so-called number of shots, is reduced to improve the number of wafers, masks, and reticles to be processed per unit time. there were.
In particular, the 1: 1 electron beam stepper transfers all the patterns by one irradiation, and is the most effective method in the method of reducing the number of shots. In addition, from the viewpoint of achieving high throughput using so-called multi-beam,
A two-dimensionally arranged electron source disclosed in JP-A-62-299088 has also been proposed.

[0003]

SUMMARY OF THE INVENTION In the above prior art,
For the purpose of improving the throughput, an aperture for shaping the cross section of the electron beam into a specific shape that repeatedly appears in the LSI pattern, or a thin film of photoelectric conversion material is formed in advance on the transparent substrate according to the LSI pattern. However, when drawing a pattern other than a previously prepared shape, the throughput is reduced, or the drawing itself is impossible. In other words, these techniques have a side that must sacrifice the flexibility of patterning that an electron beam exposure apparatus has, that "a pattern of any shape can be drawn".

The present invention simultaneously realizes an area-shaped electron beam generating function for improving the throughput of the electron beam exposure apparatus and a function capable of freely controlling the cross-sectional shape of the electron beam bundle according to the drawing figure data. Thus, it is an object of the present invention to provide an electron beam exposure apparatus capable of writing patterns of any shape while achieving high throughput.

[0005]

Control for controlling a group of pixels that generate electron beam fluxes arranged in a plane or two-dimensionally and a group of pixels that are divided and arranged in a two-dimensional matrix and that excite electron beams independently of each other. When combined with a device, the graphic information of the LSI pattern to be drawn is converted into graphic information digitized pixel by pixel, and L assigned to each pixel is converted.
By turning on / off the electron beam depending on the presence / absence of the SI pattern, the shape of the LSI pattern to be drawn can be reflected in the cross-sectional shape of the electron beam bundle as shown in FIG. It can be controlled to a desired shape. The electron beam flux generated in this way is accelerated with respect to the sample by applying a necessary voltage between the electron beam generator as the cathode and the anode arranged opposite to this, and using this electron beam flux with the electron lens. And reduce and project on the sample. At this time, the smoothness of the graphic required on the sample can be relatively determined by the resolution of the resist applied to the sample and the size of the pixel projected on the sample. The reduction ratio of the electron lens that projects the electron beam bundle can be determined from the ratio of the size of the pixel projected on the sample and the size of the pixel on the electron beam generation source that is determined by the number of pixel divisions. Further, after exposing a predetermined pattern, the electron beam is blocked, and the electron beam bundle is relatively moved to the drawing position on the next sample so that the patterns are continuously drawn, and then the LSI pattern is drawn on the sample. be able to. Here, the method of blocking the electron beam can be realized by turning off all the pixel groups immediately after exposing the pattern for a predetermined time. Further, the relative movement of the electron beam bundle and the sample can be performed by a deflector arranged together with the electron lens.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an embodiment relating to claim 1 of the present invention. The electron beam generation source 11 arranged in a plane or two-dimensionally divides the graphic information to be drawn in the LSI pattern into pixel units and turns on / off the electron beam for each pixel according to the presence / absence of the graphic information. A graphic information processing unit 12 that generates a signal and a shape control unit 13 that excites the electron beam bundle 18 into a desired shape according to the on-off signal are provided. The electron beam bundle 18 emitted from the electron beam generation source 11 is accelerated by the electron gun 14 to the sample 19 with a predetermined acceleration voltage, and reduced and projected onto the sample 19 by the electron lens 15. Here, the reduction rate is
It can be determined by the relationship between the minimum processing size and the size of the pixel on the sample 19. In order to move the position on the sample 19 of the electron beam bundle 18 reduced and projected on the sample 19, a deflector 16 is provided in front of the electron lens 15 or superposed on a converging field formed by the electron lens 15. ing. Further, a detector 17 is provided for detecting reflected electrons or secondary electrons generated from the sample 19 by the electron beam bundle 18 projected on the sample 19. In the apparatus of the present invention, the beam position detection mark (not shown) provided on the sample 19 is scanned by the deflector 16 with the electron beam bundle (not shown) whose shape is previously determined for mark detection, and the secondary position is detected. By detecting the position of the beam by detecting electrons or reflected electrons with the detector 17, the electron beam bundle 18 can be accurately irradiated to a desired position on the sample 19. When the apparatus of this embodiment is used, the area-imparted electron beam bundle 18 causes
Since the number of shots when drawing an LSI pattern is reduced, high throughput can be realized, and at the same time, since it has a pattern generation function, not only when it has a specific repetitive pattern like a memory, but also ASIC, etc. It is also applicable to the manufacture of semiconductor devices, masks, and reticles that do not contain repetitive patterns as described above. Further, since it is possible to irradiate a large area at a time, it can be used for manufacturing a display element such as a liquid crystal.

FIG. 2 shows an embodiment of claim 2 of the present invention. Individual pixels generated from a plurality of electron sources by reducing and projecting a pixel group corresponding to a plurality of electron beam sources arranged in a plane or two-dimensionally in a 1: 1 relationship on a sample (not shown). The plurality of electron sources are individually turned on signal 21a-off signal 2 without individually deflecting each electron beam.
1b is generated, and the electron beam flux 1 that reflects the shape of a part of the LSI pattern 210 by controlling these is generated.
An electron beam exposure apparatus for generating 8 ′ and drawing an LSI pattern 210, and an exposure method using this apparatus. .

FIG. 3 is an embodiment relating to claim 3 of the present invention and relates to the constitution of the electron beam generator 11 and the control units 12 and 13 for controlling the shape of the electron beam bundle shown in FIG. Is. Light of specific wavelength 35 'such as laser
And a planar electron formed by forming a photoelectric conversion thin film that generates electrons by irradiating the light source 35 that emits light with the light 35 ′ of the specific wavelength on the vacuum side (the side opposite to the side where the laser light is irradiated) of the transparent substrate. A so-called optical switch group 34 in which optical switches for controlling light transmission by an electric signal are two-dimensionally arranged between the beam generation source 31 and graphic information to be drawn as pixels with each optical switch as a pixel unit. A graphic information processing unit 32 for dividing and converting into an optical switch and an optical switch control unit 33 for on / off controlling the optical switch group are provided. Here, a substance such as CsI can be used for the photoelectric conversion thin film, and a liquid crystal, a polarization controllable optical fiber, or the like can be used for the optical switch. According to this embodiment, it is possible to generate an electron beam having a desired shape.

FIG. 4 is an embodiment relating to claim 4 of the present invention and relates to the construction of the electron beam generation source 11 and the control units 12 and 13 for controlling the shape of the electron beam bundle shown in FIG. Is. As the electron beam generation source 41 which is arranged two-dimensionally and each of which can be controlled to be turned on and off independently, for example, a field emission cathode arranged in a plane can be used. A voltage control unit 43 is provided for converting each pixel signal into a voltage signal for exciting an electron beam in accordance with data from the graphic division processing unit 32 for dividing and converting the graphic information to be drawn pixel by pixel. They are,
Individual electron beams generated from the electron beam generation source 41 should not be individually deflected by a so-called blanking electrode group arranged in a vacuum, but should be drawn on the electron beam generation sources 41 arranged two-dimensionally. According to the data from the graphic division processing unit 32 that divides and converts the graphic information into pixel units, the voltage control unit 43 that converts each pixel signal into a voltage signal that excites an electron beam may be integrated or joined together in a vacuum. Characteristically, it becomes possible to generate an electron beam having a desired shape as in the embodiment described in the preceding paragraph. Also,
Since the structure in the vacuum is simplified and the contamination with scattered electrons is small, the maintenance and stability of the device are improved.

FIG. 5 is an embodiment relating to claim 5 of the present invention and relates to a figure division processing section 42 for dividing and converting the figure information to be drawn shown in FIGS. The LSI pattern 510 is divided into 18 'for each drawing area that is collectively drawn with an electron beam bundle.
Each drawing area is divided into a two-dimensional mesh in a predetermined pixel unit. At this time, the ON signal 51a of the electron beam is used as data for generating the graphic information in each pixel, and the OFF signal 51b of the electron beam is generated as the data for generating no graphic information in each pixel. On the other hand, a coordinate system corresponds to the control unit that excites the electron beam, and each pixel can be uniquely determined as a specific value on two coordinate axes. For this reason,
For example, if the matrix controller excites the electron beam in accordance with the coordinate value corresponding to the ON signal of the electron beam, it is possible to realize the graphic information controller that can generate the electron beam bundle having a desired shape. Further, regarding the above-mentioned data conversion up to the matrix control, it is possible to replace the functions of the corresponding portions of claims 3 and 4 with the data conversion method in the computer.

FIG. 5 is also an embodiment relating to claim 6 of the present invention. When determining the presence / absence of graphic information in each pixel, a reference value is set in advance for the occupancy rate of the graphic information occupying the pixel. If the reference value is equal to or larger than the reference value, the graphic information is present in the pixel When there is no graphic information, the diagonal portion of the graphic information can be accurately approximated by rectangular pixels. FIG. 5 shows the case where 1/2 is set as the reference value.

FIG. 6 is an embodiment relating to claim 7 of the present invention. The electron source 61 of the electron beam exposure apparatus is in the floating state for the acceleration potential with respect to the ground potential due to the acceleration voltage applied thereto. Therefore, setting the entire graphic information control units 62 and 63 at the same potential as the electron beam generation source causes not only restrictions on the device configuration such as an insulator measure, but also
When a discharge occurs in the acceleration power system, the graphic information control unit 6
It also causes problems from the viewpoint of reliability, such as the destruction of 2, 63. Therefore, the electron beam generation source 6 of the graphic information control unit
1 for signal transmission to the optical cable 60a and the optical connector 60b
By electrically separating by using, the device configuration can be simplified and the reliability can be improved. FIG. 6 shows an example in which the graphic information control units 62 and 63 are incorporated.

FIG. 7 shows one embodiment of claim 8 of the present invention, which relates to the structure of the electron gun 14 of FIG. A two-dimensional array of electron beam generators 71,
In order to accelerate the electron beam 18 emitted from the electron beam source 71 to a desired acceleration voltage, the electron beam source 71
An anode 70a is provided so as to face the above. In order to uniformly accelerate the electron beam bundle 18 having a cross-sectional shape according to the graphic information of the LSI pattern without distortion, when an acceleration potential is applied between the electron beam generation source 71 and the anode 70a, the equipotential surface 70v becomes It is desirable to be as parallel as possible as the beam generation source. In order to realize this condition, the diameter of the anode opening may be set in advance to be 1.1 times or more the diameter of the circle circumscribing the electron beam generating sources arranged two-dimensionally. .

Further, when the shape of the opening of the anode is square, the dimension of one side thereof is preset to be 1.1 times or more of the dimension of one side of the electron beam generators arranged in a two-dimensional manner. You can leave it.

FIG. 5 is also an embodiment relating to claim 9 of the present invention and relates to a method of determining the projection magnification of the electron lens 15 of FIG. In the present invention, since a plurality of electron sources constituting the electron beam generating source are made to correspond to the pixel group in a ratio of 1: 1 to form the pattern 510 by turning on and off the electron sources, the pixels 51a and 51b projected on the sample are formed. The size needs to be equal to or smaller than the minimum line width of the pattern 510 required on the sample. On the other hand, if the size of the projected pixel is made sufficiently smaller than the minimum line width, the size of the electron beam generators that are arranged two-dimensionally covers the sample and the number of shots increases. Throughput decreases. Further, when the number of arranged electron sources is increased, the number of bits of the graphic information control unit is increased, which causes an increase in hardware scale. Therefore, the size of the pixel projected on the sample is 1/2 to 1 / of the minimum processing line width of the sample.
It is desirable to set to 10. In this embodiment, the case of 1/5 is shown.

FIG. 1 is also an embodiment relating to claim 10 of the present invention. In order to project the electron beam bundle 18 having a cross-sectional shape according to the graphic information of the LSI pattern on the sample 19 at a predetermined reduction ratio, the electron beam bundle 18 is projected as uniformly as possible. The image formed by 11 may be projected onto the sample 19 without forming a crossover image by the electron lens 15. In this embodiment, the number of electron lenses 15 is one. However, even when two or more electron lenses are used, the operating conditions of the electron lenses may be determined so that a crossover image is not formed.

FIG. 8 shows an embodiment of claim 11 of the present invention. When projecting the electron beam bundle 88 having a cross-sectional shape according to the graphic information of the LSI pattern on the sample 19 at a predetermined reduction ratio, in order to increase the reduction ratio, a plurality of electron lenses 15 ′ and 15 ″ are used. Crossover image 80c
Should be formed.

FIG. 9 relates to claim 12 of the present invention, and is a sample stage 90 on which the sample 19 shown in FIG. 1 is mounted.
is an example of s. It is effective to use the sample stage 90s of the so-called step-and-repeat method, which is a sequential movement method, in order to realize highly accurate drawing. When this method is used, the sample stage is stopped at a desired position when exposing the LSI pattern (not shown) while deflecting the electron beam bundle 18 projected on the sample 19 by the deflector 16. When the electron beam bundle 18 is deflected by the deflector 16 to expose the pattern of the deflection region 90a, the sample stage 90
move s to a predetermined position 90a 'in the direction of the dotted arrow,
Similarly, by further drawing a pattern, it becomes possible to expose a high-quality LSI pattern.

FIG. 10 shows an embodiment of claim 13 of the present invention. In order to realize high-speed drawing, it is effective to use the so-called continuous movement type sample stage 100s. When exposing the LSI pattern while deflecting the electron beam bundle 18 projected on the sample by a deflector (not shown), the sample stage continuously draws the inside of the deflection region 100a at a predetermined speed so that the dotted line arrow Move in the direction. At this time, the speed of the sample stage 100s is sequentially changed while deflecting with a deflector so that the electron beam bundle 18 is relatively stopped with respect to the sample 19 mounted on the sample stage 100s (not shown). ) Is required to be exposed, but the sequential movement method is suitable for high-speed writing with less waste time than stopping writing while the sample stage is moving.

FIG. 11 shows an embodiment of claim 14 of the present invention. To achieve high-speed writing, it is effective to use a so-called continuous movement type sample stage, but the sample stage must be moved continuously at a predetermined speed that can draw the inside of the deflection area. When the sample stage is moved at a constant speed, the moving speed of the sample stage is limited by the maximum density portion of the pattern to be drawn. In the present invention, the exposure time of the patterns 11a to 11f is limited by the time for exposing one pixel (not shown) projected on the sample and does not depend on the number of pixels to be projected, that is, the density of the pattern. The moving speed of the sample stage can be determined by the current density, resist sensitivity, and response speed of the deflector.

FIG. 12 shows one embodiment of claim 15 of the present invention. Not limited to the present invention, in the electron beam exposure apparatus, after a certain pattern is exposed, the deflection amount by the deflector is changed so that the electron beam is irradiated to a predetermined position to expose the next pattern, or the sample stage. It is necessary to move the electron beam. At this time, the so-called blanking function of blocking the electron beam on the sample is important. According to the present invention, since the electron beam bundle 12a having a desired shape can be generated, if the electron beam bundle 12b is controlled in a state where no pattern exists, the electron beam bundle 12a can be emitted to any of the pixels projected on the sample. Since the ON signal is not included, the OFF state of the electron beam flux on the sample, that is, the blanking function can be realized.

FIG. 13 is an embodiment relating to claim 16 of the present invention. In the present invention, the electron beam bundle 88
When forming the crossover 80c of the so-called blanking electrode 13a at the position of the crossover 80c.
And a blanking diaphragm 13b are provided, and the crossover 80c formed by the electron lens 15 'is imaged at the center of the blanking diaphragm 13b. When the electron beam bundle 88 is blocked on the sample, a voltage is applied to the blanking electrode 13a and the electron beam bundle 88 is placed on the blanking diaphragm 13b.
Is deflected to move the position of the crossover 80c onto the blanking diaphragm 13b.

FIG. 14 shows an embodiment according to claim 17 of the present invention. When the electron beam exposure apparatus of the present invention is used as a lithographic apparatus in a manufacturing process of a semiconductor element for drawing a pattern on a wafer or a glass substrate 14c, a mask and a reticle required for pattern transfer like conventional optical lithography are manufactured. The process can be simplified. Further, according to the present invention, the fineness of the electron beam bundle 18 and the high throughput as compared with the conventional electron beam exposure apparatus can be realized at the same time, and the manufacturing method is excellent in fine workability and productivity.

[0024]

According to the present invention, the number of shots of the electron beam exposure apparatus, which greatly increases with the reduction of the processing line width, can realize a high throughput by the electron beam flux having an area. Since it has a generation function, not only when it has a specific repeating pattern like a memory,
It can also be applied to the manufacture of semiconductor devices, masks, and reticles that do not contain many repetitive patterns such as SIC. Further, since it is possible to irradiate a large area at a time, it can be used for manufacturing a display element such as a liquid crystal.

[Brief description of drawings]

FIG. 1 shows a basic configuration of an electron beam exposure apparatus of the present invention.

FIG. 2 shows a drawing method using the electron beam exposure apparatus of the present invention.

FIG. 3 shows an example of a means for generating an electron beam bundle by optical excitation.

FIG. 4 shows an example of generating electron beam bundles from electron sources arranged two-dimensionally.

FIG. 5 shows a method of allocating pattern-shaped data to be drawn to the electron beam flux generating means divided into pixel groups.

FIG. 6 shows an example of electrically separating a graphic information processing unit for controlling an electron beam flux generating means according to a pattern to be drawn from an electron beam generating source.

FIG. 7 relates to an electron gun that accelerates an electron beam flux emitted from an electron source to a predetermined acceleration voltage.

FIG. 8 relates to a configuration of an electron optical system when a crossover is formed in the electron beam exposure apparatus of the present invention.

FIG. 9 shows a drawing method when a step-and-repeat type sample stage is used.

FIG. 10 shows a drawing method when a continuous movement type sample stage is used.

FIG. 11 shows that even when a continuous movement type sample stage is used, the sample stage can be moved at a constant speed regardless of the density of the pattern to be drawn.

FIG. 12 shows a blanking control method for an electron beam bundle in the electron beam exposure apparatus of the present invention.

FIG. 13 shows an example of the configuration of an electron optical system that enables blanking of an electron beam bundle in the electron beam exposure apparatus of the present invention.

FIG. 14 shows a manufacturing process of a semiconductor device using the present invention, particularly a lithographic process.

[Explanation of symbols]

11, 31, 41, 61, 71; electron beam source, 1
2, 62; graphic information processing unit, 13, 63; shape control unit,
14; electron gun, 15, 15 ', 15 "; electron lens, 1
6; deflector, 17; detector, 18, 18 ', 88; electron beam flux, 210, 510, 11a, 11b, 11c,
11d, 11e, 11f; LSI pattern, 12a; ON state of pattern by pixel, 12b; OFF state of pattern by pixel, 13a; blanking electrode, 13b; blanking diaphragm, 14a; resist, 14b; 14c: substrate, 21a, 51a; pixel ON signal,
21b, 51b; pixel off signal, 32; graphic information processing unit, 33; optical switch control unit, 34; optical switch group, 3
5; light source, 35 '; light, 43; voltage control unit, 60a; optical cable, 60b; optical connector, 70a; anode, 70
v: equipotential surface, 80c; crossover, 90a, 90
a ', 100a; deflection area, 90s; step and repeat stage, 100s; continuous movement stage

Front page continuation (72) Eiji Takeda Eiji Takeda 1-280 Higashi Koikekubo, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Inventor Hiroya Ota 1-280 Higashi Koikeku, Tokyo Kokubunji-shi Hitachi Ltd. Central In the laboratory

Claims (17)

[Claims] 1. In a so-called electron beam exposure apparatus which draws an LSI pattern by an electron beam, a plane or two-dimensionally arranged electron beam flux generating means and graphic information of the LSI pattern to be drawn are used. Means for changing the electron beam flux into a desired shape, means for accelerating the electron beam flux with respect to the sample, means for reducing and projecting the electron beam flux onto the sample, and deflecting the electron beam flux. An electron provided with means for moving the position of the electron beam bundle on the sample, and means for detecting reflected electrons or secondary electrons generated from the sample by the electron beam bundle projected on the sample. Beam exposure device. 2. In a so-called electron beam exposure apparatus for drawing an LSI pattern by an electron beam, a plurality of electron beam generating means arranged in a plane or two-dimensionally and the plurality of electron beams are individually turned on. And a means for controlling off, and by generating on-off control of the means for generating the plurality of electron beams, an electron beam flux that reflects the shape of the LSI pattern or a part of the LSI pattern,
An electron beam exposure apparatus and an exposure method, wherein an LSI pattern is drawn by the electron beam bundle. 3. An electron beam is generated by irradiating a light source that emits light of a specific wavelength and a means that changes the shape of the electron beam bundle with a light source that emits light of a specific wavelength. In accordance with a planar electron beam generation source that generates light, a so-called optical switch group that is provided between the light source and the electron beam generation source, and controls transmission of light that is two-dimensionally arranged, and graphic information to be drawn. The electron beam exposure apparatus according to claim 1, wherein the switch group includes an optical switch control unit that controls ON / OFF of the switch group. 4. An electron configured so that the means for generating the electron beam bundle and the means for changing the shape of the electron beam bundle are arranged two-dimensionally, and each of them can be individually turned on and off. The beam generation source and a control unit for controlling the electron beam generation source according to graphic information to be drawn are integrated with the electron beam generation source or are configured to be bonded outside the vacuum. 1. Electron beam exposure apparatus. 5. A means for changing the shape of the electron beam bundle is used to convert the graphic information to be drawn into a pixel group arranged in a two-dimensional manner, and to determine whether or not there is information in each pixel by turning on the electron beam.
6. The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus comprises a graphic information control unit capable of generating an electron beam bundle having a desired shape by converting the signal into an OFF signal, and its drawing. Data conversion method. 6. The graphic information to be drawn is converted into a pixel group arranged in a two-dimensional manner, a reference value of the occupation ratio of the graphic information in each pixel is set, and graphic information is present when the reference value is equal to or more than the reference value. When the value is less than the reference value, the graphic information is assigned to each pixel as no graphic information, and the on / off signal of the electron beam is generated according to the allocation to generate the graphic information data for generating the electron beam flux of a desired shape. 6. The drawing data conversion method in an electron beam exposure apparatus according to claim 1, 4, or 5. 7. A graphic information control unit and an electron beam generation source are transmitted by an optical cable by transmitting a signal obtained by converting graphic information to be drawn into on-off information of an electron beam as a pixel group arranged two-dimensionally. 7. The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus is configured to be electrically separated. 8. A means for accelerating the electron beam flux with respect to a sample, an anode having an opening of 1.1 times or more the diameter of a circle circumscribing an electron beam generating source arranged two-dimensionally, or The electron beam flux emitted from the two-dimensional electron beam generating source is provided with an anode having a rectangular aperture 1.1 times or more the side length of the electron beam generating source arranged in a two-dimensional array. 2. The electron beam exposure apparatus according to claim 1, wherein a so-called crossover is not formed when a desired voltage is applied between the electron beam generation source and the anode for acceleration. 9. The size of an image of one pixel projected on the sample is equal to or smaller than the minimum processing size of the sample when the means for projecting the electron beam flux on the sample is reduced and projected. The electron beam exposure apparatus according to claim 1, wherein a reduction rate is determined. 10. At least one electron lens is provided between the electron beam generation source and the sample to reduce crossover when the electron beam flux is reduced to a desired reduction ratio and projected onto the sample. The electron beam exposure apparatus according to claim 1, which is not formed. 11. A crossover is provided when at least two electron lenses are provided between an electron beam generation source and a sample, and the electron beam flux is reduced to a desired reduction ratio and projected onto the sample. The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus is formed. 12. A range in which the electron beam flux can be deflected by the deflector by stopping the sample stage at a desired position when exposing the LSI pattern while deflecting the electron beam flux projected on the sample by the deflector. When a pattern in the inside is exposed, a sample stage of a so-called step-and-repeat system is used, in which the sample stage is moved to a predetermined position to draw a further pattern on the pattern. Item 1, 2 electron beam exposure apparatus. 13. A sample mounted on the sample stage, which is continuously moved at a predetermined speed when exposing an LSI pattern while deflecting an electron beam flux projected on the sample by a deflector. On the other hand, a so-called continuous movement type sample stage is used in which the patterns are sequentially exposed while being deflected by the deflector so that the electron beam bundle is relatively stopped. 2 electron beam exposure apparatus. 14. A sample mounted on the sample stage by continuously moving the sample stage at a predetermined speed when exposing the LSI pattern while deflecting the electron beam flux projected on the sample by a deflector. On the other hand, in the so-called continuous movement type sample stage in which the patterns are sequentially exposed while being deflected by the deflector so that the electron beam flux is relatively stopped, the current of the electron beam flux on the sample is increased. 14. The electron beam exposure apparatus according to claim 1, wherein the electron beam exposure apparatus is moved at a constant moving speed determined by the density, the sensitivity of the electron beam resist applied to the sample, and the response speed of the deflector. 15. A so-called blanking function of blocking the electron beam flux on the sample is performed by turning off all pixel generation signals.
5. Electron beam exposure device 16. A so-called blanking electrode and a blanking diaphragm for blocking the electron beam flux on the sample are provided, and a crossover formed by an electron lens is imaged at the center of the blanking diaphragm, and is formed on the blanking electrode. The electron beam exposure apparatus according to any one of claims 1 and 15, wherein the crossover is deflected on the blanking diaphragm by an applied voltage to interrupt the electron beam bundle. 17. A method of manufacturing a semiconductor device, wherein a pattern is drawn on a wafer or a glass substrate by using the electron beam exposure apparatus according to claim 1.