JPH06222311A - Bismuth-substituted rare earth-iron-garnet single crystal film, optical isolator and magneto-optical switch - Google Patents
Bismuth-substituted rare earth-iron-garnet single crystal film, optical isolator and magneto-optical switchInfo
- Publication number
- JPH06222311A JPH06222311A JP1204693A JP1204693A JPH06222311A JP H06222311 A JPH06222311 A JP H06222311A JP 1204693 A JP1204693 A JP 1204693A JP 1204693 A JP1204693 A JP 1204693A JP H06222311 A JPH06222311 A JP H06222311A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- magnetic field
- crystal film
- external magnetic
- bismuth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 46
- 239000002223 garnet Substances 0.000 title claims abstract description 34
- 230000003287 optical effect Effects 0.000 title claims abstract description 25
- 239000000126 substance Substances 0.000 claims abstract description 12
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 7
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 5
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 5
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 5
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 5
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 5
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 62
- 229910052742 iron Inorganic materials 0.000 claims description 26
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 17
- 150000002910 rare earth metals Chemical class 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 239000013307 optical fiber Substances 0.000 abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 abstract description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000009738 saturating Methods 0.000 abstract 1
- 238000006467 substitution reaction Methods 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 230000010287 polarization Effects 0.000 description 9
- -1 zirconium-substituted gadolinium Chemical class 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000000696 magnetic material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は,ビスマス置換希土類鉄
ガーネット単結晶膜とそれをファラデー回転子として用
いた光アイソレータ及び磁気光学スイッチに関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bismuth-substituted rare earth iron garnet single crystal film, an optical isolator using the same as a Faraday rotator, and a magneto-optical switch.
【0002】[0002]
【従来の技術】光ファイバ通信においては,光源等への
反射雑音の除去,あるいは通信中継器等での光スイチン
グを目的として,イットリウム鉄ガーネット単結晶やビ
スマス(Bi)置換鉄ガーネット単結晶を用いた光アイ
ソレータや磁気光学スイッチが使用されている。これら
の単結晶は,外部磁界を印加した状態で,その磁界の方
向もしくは逆方向に偏光を入射すると単結晶を通過した
偏光の偏波面が回転するファラデー回転効果と呼ばれる
特性を有する。このファラデー回転効果は,単なる旋光
とは異なり,非相反であるため,光アイソレータや磁気
光学スイッチに使用される。2. Description of the Related Art In optical fiber communication, yttrium iron garnet single crystal or bismuth (Bi) substituted iron garnet single crystal is used for the purpose of removing reflection noise to a light source or for optical switching in a communication repeater. Previously used optical isolators and magneto-optical switches are used. These single crystals have a characteristic called a Faraday rotation effect in which the plane of polarization of polarized light that has passed through the single crystal rotates when polarized light is incident in the direction of the magnetic field or in the opposite direction with an external magnetic field applied. This Faraday rotation effect is non-reciprocal, unlike simple optical rotation, and is therefore used in optical isolators and magneto-optical switches.
【0003】図3及び図4は夫々光アイソレータ及び磁
気光学スイッチの原理を示す図である。図3に示す光ア
イソレータにおいては,偏波面選択方向8,10がそれ
ぞれ45°ずれている2個の偏光子7,9とそれらの間
に位置する45°のファラデー回転角を有するファラデ
ー回転子5,そしてファラデー回転子に矢印11で示す
ように磁界を印加するための図示しない磁石,通常はフ
ァラデー回転子の周囲を覆う円筒形の永久磁石である,
により構成されている。6は偏光を受ける光である。3 and 4 are diagrams showing the principles of an optical isolator and a magneto-optical switch, respectively. In the optical isolator shown in FIG. 3, two polarizers 7 and 9 having polarization plane selection directions 8 and 10 shifted from each other by 45 ° and a Faraday rotator 5 having a Faraday rotation angle of 45 ° located between them. , And a magnet (not shown) for applying a magnetic field to the Faraday rotator as shown by an arrow 11, which is usually a cylindrical permanent magnet that covers the periphery of the Faraday rotator,
It is composed by. Reference numeral 6 is light that is polarized.
【0004】図4に示す磁気光学スイッチの原理も,光
アイソレータの原理に類似している。即ち,磁気光学ス
イッチは,偏光選択方向15を有する偏光子14と,フ
ァラデー回転子12と,出射側の偏光子9に代る偏光ビ
ームスプリッタ16と,外部磁界17の印加用の図示し
ない電磁石とを備え,この電磁石に流す直流電流の方向
を電気的に反転し,磁界の方向17を反転することによ
って,フェラデー回転の方向を反転し,透過光の方向1
8をスイッチングしている。The principle of the magneto-optical switch shown in FIG. 4 is also similar to that of an optical isolator. That is, the magneto-optical switch includes a polarizer 14 having a polarization selection direction 15, a Faraday rotator 12, a polarization beam splitter 16 instead of the exit side polarizer 9, and an electromagnet (not shown) for applying an external magnetic field 17. By electrically reversing the direction of the direct current flowing through this electromagnet and reversing the direction 17 of the magnetic field, the direction of Faraday rotation is reversed and the direction of transmitted light 1
8 is switching.
【0005】磁気光学スイッチ用の電磁石としては,コ
イルを用い直流電流を常に投入しておかなければならな
いものの他,図5に示すように,半硬質磁性材料23に
コイル24を巻回したものがある。この図5の方式で
は,直流のパルス電流を投入するだけで光のスイッチン
グ動作が行われるため消費電力が少ないという利点があ
り,実用化が進んでいる。なお,図5において,21は
偏光子,19はファラデー回転子,22は偏光ビームス
プリッタ,20は入射光,25はスイッチングされた出
力光である。As the electromagnet for the magneto-optical switch, in addition to the one in which a direct current has to be constantly applied by using a coil, the one in which a coil 24 is wound around a semi-hard magnetic material 23 as shown in FIG. is there. The method of FIG. 5 has an advantage of low power consumption because the optical switching operation is performed only by applying a DC pulse current, and is being put to practical use. In FIG. 5, 21 is a polarizer, 19 is a Faraday rotator, 22 is a polarization beam splitter, 20 is incident light, and 25 is switched output light.
【0006】このような光アイソレータや磁気光学スイ
ッチにおいては,偏光子等の光学系を複雑化することで
入射光が非偏光であっても動作できるようにしたものが
あるが,基本的な原理は図3及び図4に示されたものと
同様である。In such an optical isolator and a magneto-optical switch, there is one in which an optical system such as a polarizer is complicated so that the incident light can operate even if it is unpolarized. Is similar to that shown in FIGS.
【0007】[0007]
【発明が解決しようとする課題】一般に,イットリウム
鉄ガーネット単結晶やビスマス置換希土類鉄ガーネット
単結晶は飽和磁界以上の磁界下でファラデー回転角が一
定の値を示すが,飽和磁界以下の大きさの磁界下におい
ては,外部磁界にファラデー回転角がほぼ比例し,外部
磁界を除去した場合,ファラデー回転効果がなくなるこ
とが常識とされている。In general, yttrium iron garnet single crystals and bismuth-substituted rare earth iron garnet single crystals show a constant Faraday rotation angle under a magnetic field above the saturation magnetic field, but have a value below the saturation magnetic field. It is common knowledge that the Faraday rotation angle is almost proportional to the external magnetic field under a magnetic field, and that the Faraday rotation effect disappears when the external magnetic field is removed.
【0008】したがって,イットリウム鉄ガーネット単
結晶膜やビスマス置換希土類鉄ガーネット単結晶膜を上
記した光アイソレータや磁気光学スイッチに用いた場合
においては,外部磁界印加用の磁石が不可欠であるため
に,デバイスとして小型化や低コスト化を妨げていた。
特に,磁気光学スイッチにおいては,半硬質磁性材料に
コイルを巻回したものは,図5に示すように,その構成
がかなり複雑になり大型となる上にかなり高価格となっ
てしまう。Therefore, when the yttrium iron garnet single crystal film or the bismuth-substituted rare earth iron garnet single crystal film is used in the above optical isolator or magneto-optical switch, a magnet for applying an external magnetic field is indispensable. As a result, miniaturization and cost reduction were hindered.
In particular, in a magneto-optical switch, a coil wound around a semi-hard magnetic material has a complicated structure, becomes large in size, and becomes considerably expensive as shown in FIG.
【0009】そこで,本発明の技術的課題は,簡単な構
造で小型化され,低コストで容易に製造される光ファイ
バ通信に不可欠な光アイソレータ及び磁気光学スイッチ
とそれに用いるビスマス置換希土類鉄ガーネット単結晶
膜を提供することにある。Therefore, the technical problem of the present invention is to provide an optical isolator and a magneto-optical switch, which are indispensable for optical fiber communication, which are simple in structure, small in size, and easily manufactured at low cost, and a bismuth-substituted rare earth iron garnet used for the same. It is to provide a crystalline film.
【0010】[0010]
【課題を解決するための手段】本発明者は,これらの課
題を解決するために,ファラデー回転子に用いるイット
リウム鉄ガーネット単結晶やビスマス置換希土類鉄ガー
ネット単結晶が外部磁界が消失してもファラデー回転角
を保持する能力を具備すること見出し,本発明をなすに
至ったものである。In order to solve these problems, the present inventor has found that the yttrium iron garnet single crystal or the bismuth-substituted rare earth iron garnet single crystal used in the Faraday rotator is faradaic even if the external magnetic field disappears. The present invention has been completed by finding out that the present invention has the ability to hold the rotation angle.
【0011】本発明によれば,LPE法によって育成さ
れるビスマス置換希土類鉄ガーネット単結晶膜におい
て,前記単結晶膜は,化学組成がGdx Ry Bi3-x-y
Fe5- z (AlGa)z O12(但し,RはLa,Ce,
Pr,Nd,Sm,Eu,Tb,Dy,Er,Tm,Y
b,Lu,Yのうちの少なくとも一種であり,x,y,
zはそれぞれ1.0≦x≦2.5,0≦y≦1.9,
0.5≦z≦2.0の数である。)で示され,前記単結
晶膜面と交差する方向に外部磁界を印加し磁気飽和させ
たのち当該外部磁界を除去しても,磁気飽和させた際の
ファラデー回転効果を保持することを特徴とするビスマ
ス置換希土類鉄ガーネット単結晶膜が得られる。According to the present invention, in the bismuth-substituted rare earth iron garnet single crystal film grown by the LPE method, the single crystal film has a chemical composition of Gd x Ry Bi 3-xy.
Fe 5- z (AlGa) z O 12 (where R is La, Ce,
Pr, Nd, Sm, Eu, Tb, Dy, Er, Tm, Y
at least one of b, Lu, and Y, x, y,
z is 1.0 ≦ x ≦ 2.5, 0 ≦ y ≦ 1.9,
It is a number of 0.5 ≦ z ≦ 2.0. ), The Faraday rotation effect at the time of magnetic saturation is maintained even if the external magnetic field is removed after applying the external magnetic field in the direction crossing the single crystal film surface to cause magnetic saturation. A bismuth-substituted rare earth iron garnet single crystal film is obtained.
【0012】また,本発明によれば,前記ビスマス置換
希土類鉄ガーネット単結晶膜からなることを特徴とする
ファラデー回転子が得られる。Further, according to the present invention, there is obtained a Faraday rotator characterized by comprising the bismuth-substituted rare earth iron garnet single crystal film.
【0013】また,本発明によれば,前記ファラデー回
転子に外部磁界を印加して磁気飽和させ,当該外部磁界
を除去した状態で用いたことを特徴とする光アイソレー
タが得られる。Further, according to the present invention, there is provided an optical isolator which is used in a state in which an external magnetic field is applied to the Faraday rotator to cause magnetic saturation and the external magnetic field is removed.
【0014】また,本発明によれば,前記ファラデー回
転子に外部磁界を印加して磁気飽和させ,当該外部磁界
を除去した状態で用いたことを特徴とする磁気光学スイ
ッチが得られる。Further, according to the present invention, there is provided a magneto-optical switch which is characterized in that an external magnetic field is applied to the Faraday rotator to cause magnetic saturation, and the Faraday rotator is used with the external magnetic field removed.
【0015】また,本発明によれば,前記ファラデー回
転子と,前記ファラデー回転子に外部磁界を印加する電
磁石とを備え,前記電磁石に随時直流のパルス電流を投
入して,光のスイチング動作を行うことを特徴とする磁
気光学スイッチが得られる。Further, according to the present invention, the Faraday rotator and an electromagnet for applying an external magnetic field to the Faraday rotator are provided, and a DC pulse current is applied to the electromagnet at any time to perform a light switching operation. A magneto-optical switch is obtained which is characterized by carrying out.
【0016】[0016]
【作用】本発明のビスマス置換希土類鉄ガーネット単結
晶膜をファラデー回転子として用いた場合,外部磁界を
印加することなく入射光に対してファラデー回転角を与
えることができる。When the bismuth-substituted rare earth iron garnet single crystal film of the present invention is used as a Faraday rotator, a Faraday rotation angle can be given to incident light without applying an external magnetic field.
【0017】[0017]
【実施例】以下,本発明の実施例について説明する。EXAMPLES Examples of the present invention will be described below.
【0018】(実施例1)酸化ガドリニウム(Gd2 O
3 ),酸化鉄(Fe2 O3 ),酸化アルミニウム(Al
2 O3 ),酸化ガリウム(Ga2 O3 ),酸化ビスマス
(Bi2 O3 ),酸化鉛(PbO),酸化ボロン(B2
O3 )を夫々1,7,1,1,25,50,15mol
%の比で総重量5kgを白金ルツボ中に溶解混合した融
液を用い,方位{111}の非磁性カルシウム・マグネ
シウム・ジルコニウム置換ガドリニウム・ガリウム・ガ
ーネット(化学式(GdCa)3 (GaMgZr)5 O
12で示される単結晶基板に,LPE法によりビスマス置
換ガドリニウム・鉄・アルミニウム・ガリウム・ガーネ
ット(化学式Gd1.8 Bi1.2 Fe4.0 Al0.5 Ga
0.5 O12で示される)単結晶膜を育成した。この単結晶
膜に膜面に垂直方向に磁界を印加しながら同じ方向に波
長1.31μm,1.55μmの光を夫々入射させ,印
加磁界の強度を変化させながらファラデー回転係数の変
化を測定した。その結果を図1及び図2に示す。Example 1 Gadolinium oxide (Gd 2 O)
3 ), iron oxide (Fe 2 O 3 ), aluminum oxide (Al
2 O 3 ), gallium oxide (Ga 2 O 3 ), bismuth oxide (Bi 2 O 3 ), lead oxide (PbO), boron oxide (B 2
O 3 ), respectively 1,7,1,1,25,50,15 mol
% Of non-magnetic calcium / magnesium / zirconium-substituted gadolinium / gallium / garnet (chemical formula (GdCa) 3 (GaMgZr) 5 O) with a total weight of 5 kg dissolved and mixed in a platinum crucible.
A bismuth-substituted gadolinium / iron / aluminum / gallium / garnet (chemical formula: Gd 1.8 Bi 1.2 Fe 4.0 Al 0.5 Ga on the single crystal substrate 12 shown by the LPE method.
A single crystal film (denoted by 0.5 O 12 ) was grown. While applying a magnetic field to the single crystal film in the direction perpendicular to the film surface, light with wavelengths of 1.31 μm and 1.55 μm was made incident in the same direction, and the change in the Faraday rotation coefficient was measured while changing the intensity of the applied magnetic field. . The results are shown in FIGS. 1 and 2.
【0019】図示のように,この単結晶膜において,一
旦飽和磁界以上の大きさの外部磁界を印加するとファラ
デー回転係数は,外部磁界を除去してもほとんど変化せ
ずその値を保っていた。As shown in the figure, in this single crystal film, once an external magnetic field having a magnitude equal to or higher than the saturation magnetic field was applied, the Faraday rotation coefficient remained substantially unchanged even if the external magnetic field was removed.
【0020】更に,如何なる組成のビスマス置換希土類
鉄ガーネット単結晶膜において,一旦飽和磁界以上の大
きさの外部磁界を印加した後,この外部磁界を除去して
も,そのファラデー回転係数が飽和磁界以上での値を保
つものであるかを明らかにするために,極めて広範囲に
渡る組成のビスマス置換希土類鉄ガーネット単結晶膜を
LPE法によって育成し,それらの外部磁界とファラデ
ー回転係数との関係を調査した。その結果,化学式Gd
x Ry Bi3-x-y Fe5-z (AlGa)z O12(但し,
RはLa,Ce,Pr,Nd,Sm,Eu,Tb,D
y,Er,Tm,Yb,Lu,Yのうちの少なくとも一
種であり,x,y,zは,1.0≦x≦2.5,0≦y
≦1.9,0.5≦z≦2.0である。)で示される組
成において,一旦飽和磁界以上の大きさの外部磁界を印
加すれば,外部磁界を除去しても,そのファラデー回転
係数が飽和磁界以上での値を保つ事実を見出した。Further, in a bismuth-substituted rare earth iron garnet single crystal film of any composition, even if an external magnetic field having a magnitude higher than the saturation magnetic field is once applied and then the external magnetic field is removed, the Faraday rotation coefficient is equal to or higher than the saturation magnetic field. In order to clarify whether or not the value is maintained, the bismuth-substituted rare earth iron garnet single crystal film with extremely wide range of composition was grown by the LPE method, and the relation between the external magnetic field and the Faraday rotation coefficient was investigated. did. As a result, the chemical formula Gd
x R y Bi 3-xy Fe 5-z (AlGa) z O 12 (however,
R is La, Ce, Pr, Nd, Sm, Eu, Tb, D
At least one of y, Er, Tm, Yb, Lu, and Y, and x, y, and z are 1.0 ≦ x ≦ 2.5 and 0 ≦ y.
≦ 1.9 and 0.5 ≦ z ≦ 2.0. In the composition shown in (), we found that once an external magnetic field with a magnitude greater than the saturation magnetic field was applied, the Faraday rotation coefficient maintained a value above the saturation magnetic field even if the external magnetic field was removed.
【0021】ところで,LPE法によって育成されたビ
スマス置換希土類鉄ガーネット単結晶膜には,微少量な
がらるつぼから混入する白金や融液中の融剤(本実施例
の場合は,酸化鉛と酸化ボロン)から混入する鉛や硼素
(ボロン)が不純物として存在している。By the way, in the bismuth-substituted rare earth iron garnet single crystal film grown by the LPE method, platinum mixed in from the crucible and a flux in the melt (a small amount of lead oxide and boron oxide in this embodiment) were mixed. ), Lead and boron (boron) mixed in as impurities are present.
【0022】また,LPE法によって育成されるビスマ
ス置換希土類鉄ガーネット単結晶膜において,光吸収の
低減等のために,イオン化した場合の価数がプラス3価
以外となるような元素,例えば,シリコン,マグネシウ
ム,カルシウム,バナジウム等を不純物として微少量混
入させる場合がある。Further, in a bismuth-substituted rare earth iron garnet single crystal film grown by the LPE method, an element such as silicon having a valence other than plus 3 valences when ionized in order to reduce light absorption or the like. , Magnesium, calcium, vanadium, etc. may be mixed in as trace impurities.
【0023】(実施例2)実施例1において育成したビ
スマス置換ガドリニウム・鉄・アルミニウム・ガリウム
・ガーネット(化学式Gd1.8 Bi1.2 Fe4.0 Al
0.5 Ga0.5 O12で示される)単結晶膜に,その膜面に
垂直方向に飽和磁界以上の強度の外部磁界を一旦印加し
た後,波長1.31μm及び波長1.55μmの波長の
光に対して45°のファラデー回転を生ずる厚さまで研
磨した。この場合の厚さは,それぞれ375μm(波長
1.31μm用),563μm(波長1.55μm)で
あった。Example 2 Bismuth-substituted gadolinium / iron / aluminum / gallium / garnet grown in Example 1 (chemical formula Gd 1.8 Bi 1.2 Fe 4.0 Al
0.5 Ga 0.5 O 12 ) is applied to a single crystal film in the direction perpendicular to the film surface, and then an external magnetic field with a strength higher than the saturation magnetic field is once applied, and then a light with a wavelength of 1.31 μm and a wavelength of 1.55 μm And polished to a thickness that produces a Faraday rotation of 45 °. In this case, the thickness was 375 μm (for wavelength 1.31 μm) and 563 μm (wavelength 1.55 μm), respectively.
【0024】そして,これらのビスマス置換ガドリニウ
ム・鉄・アルミニウム・ガリウム・ガーネット単結晶膜
をファラデー回転子とした光アイソレータを組み立て
た。即ち,図3中で示される光アイソレータの外部磁界
印加用磁石を不要とした光アイソレータである。この光
アイソレタは外部磁界印加用磁石が不要となったため,
小型でしかも組み立ても極めて容易であった。An optical isolator using the bismuth-substituted gadolinium / iron / aluminum / gallium / garnet single crystal film as a Faraday rotator was assembled. That is, the optical isolator shown in FIG. 3 does not require the external magnetic field applying magnet. Since this optical isolator does not require a magnet for applying an external magnetic field,
It was small and easy to assemble.
【0025】(実施例3)実施例1において育成したビ
スマス置換ガドリニウム・鉄・アルミニウム・ガリウム
・ガーネット(化学式Gd1.8 Bi1.2 Fe4.0 Al
0.5 Ga0.5 O12で示される)単結晶膜に,その膜面に
垂直方向に飽和磁界以上の強度の外部磁界を一旦印加し
た後,波長1.31μm及び波長1.55μmの波長の
光に対して45°のファラデー回転を生ずる厚さまで研
磨した。この単結晶膜の厚さは,それぞれ375μm
(波長1.31μm用),563μm(波長1.55μ
m)であった。Example 3 Bismuth-substituted gadolinium / iron / aluminum / gallium / garnet (chemical formula Gd 1.8 Bi 1.2 Fe 4.0 Al) grown in Example 1
0.5 Ga 0.5 O 12 ) is applied to a single crystal film in the direction perpendicular to the film surface, and then an external magnetic field with a strength higher than the saturation magnetic field is once applied, and then a light with a wavelength of 1.31 μm and a wavelength of 1.55 μm And polished to a thickness that produces a Faraday rotation of 45 °. The thickness of each single crystal film is 375 μm
(For wavelength 1.31μm), 563μm (wavelength 1.55μ
m).
【0026】そして,これらのビスマス置換ガドリニウ
ム・鉄・アルミニウム・ガリウム・ガーネット単結晶膜
をファラデー回転子とした磁気光学スイッチを組み立て
た。Then, a magneto-optical switch using these bismuth-substituted gadolinium / iron / aluminum / gallium / garnet single crystal films as Faraday rotators was assembled.
【0027】即ち,図4に示す型の磁気光学スイッチが
得られる。この際,スイッチング用の外部磁界印加用磁
石としては,鉄芯にコイルを巻いたものを用い,そのコ
イルに直流のパルス電流を投入し,ファラデー回転を反
転させ,光のスイッチングを行った。この磁気光学スイ
ッチは,図5に示すように半硬質磁性材料23にコイル
24を巻いたものを外部磁界印加用磁石に用いる従来の
磁気光学スイッチに比べ,小型でその構成がはるかに単
純で組み立てが容易であった。That is, a magneto-optical switch of the type shown in FIG. 4 is obtained. At this time, as a magnet for applying an external magnetic field for switching, a coil wound around an iron core was used, and a DC pulse current was applied to the coil to reverse the Faraday rotation and perform optical switching. This magneto-optical switch is smaller and has a much simpler structure than a conventional magneto-optical switch in which a coil 24 is wound around a semi-hard magnetic material 23 as shown in FIG. Was easy.
【0028】以上,実施例2及び3には,実施例1にお
いて育成したビスマス置換ガドリニウム・鉄・アルミニ
ウム・ガリウム・ガーネット(化学式Gd1.8 Bi1.2
Fe4.0 Al0.5 Ga0.5 O12で示される)単結晶膜を
ファラデー回転子とした光アイソレータ及び磁気光学ス
イッチを夫々示したが,特にこの組成に限定されず,実
施例1に示す組成即ち,化学式Gdx Ry Bi3-x-y F
e5-z (AlGa)zO12(但しRはLa,Ce,P
r,Nd,Sm,Eu,Tb,Dy,Er,Tm,Y
b,Lu,Yのうちの少なくとも一種であり,x,y,
zはそれぞれ1.0≦x≦2.5,0≦y≦1.9,
0.5≦z≦2.0の数である。)で示されるビスマス
置換希土類鉄ガーネット単結晶膜をファラデー回転子と
する光アイソレータ,及び磁気光学スイッチ全てが本発
明に含まれることはいうまでもない。As described above, in Examples 2 and 3, the bismuth-substituted gadolinium / iron / aluminum / gallium / garnet (chemical formula Gd 1.8 Bi 1.2) grown in Example 1 was used.
Although an optical isolator and a magneto-optical switch using a Faraday rotator made of a single crystal film (represented by Fe 4.0 Al 0.5 Ga 0.5 O 12 ) are shown, the composition is not limited to this composition, and the composition shown in Example 1, that is, the chemical formula Gd x R y Bi 3-xy F
e 5-z (AlGa) z O 12 (where R is La, Ce, P
r, Nd, Sm, Eu, Tb, Dy, Er, Tm, Y
at least one of b, Lu, and Y, x, y,
z is 1.0 ≦ x ≦ 2.5, 0 ≦ y ≦ 1.9,
It is a number of 0.5 ≦ z ≦ 2.0. It is needless to say that the present invention includes all of the optical isolators and the magneto-optical switches, each of which has a Faraday rotator made of the bismuth-substituted rare earth iron garnet single crystal film shown in FIG.
【0029】[0029]
【発明の効果】以上,説明したように,本発明によれ
ば,印加磁界を必要とすることなくファラデー回転を与
えることができるので,光ファイバ通信に不可欠な光ア
イソレータ及び磁気光学スイッチを,小型,簡単な構造
をもって,低コストで容易に製造できるため,その工業
的価値は極めて大きい。As described above, according to the present invention, the Faraday rotation can be applied without the need for an applied magnetic field, so that the optical isolator and the magneto-optical switch, which are indispensable for optical fiber communication, can be miniaturized. , With its simple structure, it can be easily manufactured at low cost, so its industrial value is extremely large.
【図1】本発明の実施例1に係るビスマス置換型ガドリ
ニウム・鉄・アルミニウム・ガリウム・ガーネット(化
学式Gd1.8 Bi1.2 Fe4.0 Al0.5 Ga0.5 O12で
示される)単結晶膜の波長1.31μmの光に対する外
部磁界とファラデー回転との関係を示す図である。FIG. 1 is a wavelength of 1.31 μm of a bismuth-substituted gadolinium / iron / aluminum / gallium / garnet (chemical formula Gd 1.8 Bi 1.2 Fe 4.0 Al 0.5 Ga 0.5 O 12 ) single crystal film according to Example 1 of the present invention. FIG. 3 is a diagram showing a relationship between an external magnetic field and Faraday rotation with respect to the light.
【図2】本発明の実施例1に係るビスマス置換型ガドリ
ニウム・鉄・アルミニウム・ガリウム・ガーネット(化
学式Gd1.8 Bi1.2 Fe4.0 Al0.5 Ga0.5 O12で
示される)単結晶膜の波長1.55μmの光に対する外
部磁界とファラデー回転との関係を示す図である。FIG. 2 is a wavelength of 1.55 μm of a bismuth-substituted gadolinium / iron / aluminum / gallium / garnet (chemical formula Gd 1.8 Bi 1.2 Fe 4.0 Al 0.5 Ga 0.5 O 12 ) single crystal film according to Example 1 of the present invention. FIG. 3 is a diagram showing a relationship between an external magnetic field and Faraday rotation with respect to the light.
【図3】光アイソレータの原理を示す斜視図である。FIG. 3 is a perspective view showing the principle of an optical isolator.
【図4】磁気光学スイッチの原理を示す斜視図である。FIG. 4 is a perspective view showing the principle of a magneto-optical switch.
【図5】半硬質磁性材料を電磁石に用いた磁気光学スイ
ッチの構成を示す図である。FIG. 5 is a diagram showing a configuration of a magneto-optical switch using a semi-hard magnetic material for an electromagnet.
5,12,19 ファラデー回転子 6,13,20 光 7 入射側偏光子 8 入射側偏光子7の偏光面選択方向 9 出射側偏光子 10 出射側偏光子9の偏光面選択方向 11 外部磁界の印加方向 14,21 偏光子 15 偏光子14の偏光面選択方向 16,22 偏光ビームスプリッタ 17 反転しうる外部磁界の方向 18,25 外部磁界の方向によってスイッチングさ
れる2本の光 23 半硬質磁性材料 24 コイル5,12,19 Faraday rotator 6,13,20 Light 7 Incident side polarizer 8 Polarization plane selection direction of incident side polarizer 7 Exit side polarizer 10 Polarization plane selection direction of exit side polarizer 9 11 External magnetic field Application direction 14,21 Polarizer 15 Polarization plane selection direction of the polarizer 14,22 Polarization beam splitter 17 Reversible external magnetic field direction 18,25 Two lights switched by the direction of external magnetic field 23 Semi-hard magnetic material 24 coils
Claims (5)
換希土類鉄ガーネット単結晶膜において,前記単結晶膜
は,化学組成が Gdx Ry Bi3-x-y Fe5-z (AlGa)z O12(但
し,RはLa,Ce,Pr,Nd,Sm,Eu,Tb,
Dy,Er,Tm,Yb,Lu,Yのうちの少なくとも
一種であり,x,y,zはそれぞれ1.0≦x≦2.
5,0≦y≦1.9,0.5≦z≦2.0の数であ
る。)で示され,前記単結晶膜面と交差する方向に外部
磁界を印加し磁気飽和させたのち当該外部磁界を除去し
ても,磁気飽和させた際のファラデー回転効果を保持す
ることを特徴とするビスマス置換希土類鉄ガーネット単
結晶膜。1. A bismuth-substituted rare earth iron garnet single crystal film grown by the LPE method, wherein the single crystal film has a chemical composition of Gd x R y Bi 3-xy Fe 5-z (AlGa) z O 12 (however, , R is La, Ce, Pr, Nd, Sm, Eu, Tb,
At least one of Dy, Er, Tm, Yb, Lu, and Y, where x, y, and z are 1.0 ≦ x ≦ 2.
5, 0 ≦ y ≦ 1.9 and 0.5 ≦ z ≦ 2.0. ), The Faraday rotation effect at the time of magnetic saturation is maintained even if the external magnetic field is removed after applying the external magnetic field in the direction crossing the single crystal film surface to cause magnetic saturation. Bismuth-substituted rare earth iron garnet single crystal film.
ーネット単結晶膜からなることを特徴とするファラデー
回転子。2. A Faraday rotator comprising the bismuth-substituted rare earth iron garnet single crystal film according to claim 1.
磁界を印加して磁気飽和させ,当該外部磁界を除去した
状態で用いたことを特徴とする光アイソレータ。3. An optical isolator, which is used in a state where the external magnetic field is removed by applying an external magnetic field to the Faraday rotator according to claim 2 for magnetic saturation.
磁界を印加して磁気飽和させ,当該外部磁界を除去した
状態で用いたことを特徴とする磁気光学スイッチ。4. A magneto-optical switch which is used in a state in which an external magnetic field is applied to the Faraday rotator according to claim 2 to magnetically saturate the external magnetic field.
記ファラデー回転子に外部磁界を印加する電磁石とを備
え,前記電磁石に随時直流のパルス電流を投入して,光
のスイチング動作を行うことを特徴とする磁気光学スイ
ッチ。5. A Faraday rotator according to claim 2, and an electromagnet for applying an external magnetic field to the Faraday rotator, and a DC pulse current is applied to the electromagnet at any time to perform a light switching operation. Is a magneto-optical switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01204693A JP3237031B2 (en) | 1993-01-27 | 1993-01-27 | Bismuth-substituted rare earth iron garnet single crystal film, optical isolator and magneto-optical switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP01204693A JP3237031B2 (en) | 1993-01-27 | 1993-01-27 | Bismuth-substituted rare earth iron garnet single crystal film, optical isolator and magneto-optical switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06222311A true JPH06222311A (en) | 1994-08-12 |
| JP3237031B2 JP3237031B2 (en) | 2001-12-10 |
Family
ID=11794663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP01204693A Expired - Fee Related JP3237031B2 (en) | 1993-01-27 | 1993-01-27 | Bismuth-substituted rare earth iron garnet single crystal film, optical isolator and magneto-optical switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3237031B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5608570A (en) * | 1995-07-05 | 1997-03-04 | Lucent Technologies Inc. | Article comprising a magneto-optic material having low magnetic moment |
| EP0811851A3 (en) * | 1996-06-03 | 1998-04-01 | Mitsubishi Gas Chemical Company, Inc. | Faraday rotator having a rectangular shaped hysteresis |
| US5801875A (en) * | 1995-07-05 | 1998-09-01 | Lucent Technologies Inc. | Article comprising a magneto-optic material having low magnetic moment |
| US6775052B2 (en) | 2001-12-25 | 2004-08-10 | Tdk Corporation | Hard magnetic garnet material, faraday rotator, optical device, optical communication system, method of manufacturing faraday rotator and method of manufacturing bismuth-substituted rare earth iron garnet single crystal |
| CN1296751C (en) * | 2004-10-14 | 2007-01-24 | 厦门大学 | High speed mini type magnetic light switch |
| US7187496B2 (en) | 2002-03-14 | 2007-03-06 | Tdk Corporation | Manufacturing method of optical device, optical device, manufacturing method of faraday rotator, and optical communication system |
| US7211455B2 (en) | 2002-02-22 | 2007-05-01 | Sumitomo Metal Mining Co., Ltd. | Method for manufacturing semiconductor module |
| JP2019174703A (en) * | 2018-03-29 | 2019-10-10 | アンリツ株式会社 | Wavelength sweep light source, ofdr device using the same, and measuring method |
| CN116874285A (en) * | 2023-06-26 | 2023-10-13 | 北京镓创科技有限公司 | Crucible for growing gallium oxide crystal and preparation method thereof |
-
1993
- 1993-01-27 JP JP01204693A patent/JP3237031B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5608570A (en) * | 1995-07-05 | 1997-03-04 | Lucent Technologies Inc. | Article comprising a magneto-optic material having low magnetic moment |
| US5801875A (en) * | 1995-07-05 | 1998-09-01 | Lucent Technologies Inc. | Article comprising a magneto-optic material having low magnetic moment |
| EP0811851A3 (en) * | 1996-06-03 | 1998-04-01 | Mitsubishi Gas Chemical Company, Inc. | Faraday rotator having a rectangular shaped hysteresis |
| US6775052B2 (en) | 2001-12-25 | 2004-08-10 | Tdk Corporation | Hard magnetic garnet material, faraday rotator, optical device, optical communication system, method of manufacturing faraday rotator and method of manufacturing bismuth-substituted rare earth iron garnet single crystal |
| US7242516B2 (en) | 2001-12-25 | 2007-07-10 | Tdk Corporation | Hard magnetic garnet material, faraday rotator, optical device, optical communication system, method of manufacturing faraday rotator and method of manufacturing bismuth-substituted rare earth iron garnet single crystal |
| US7211455B2 (en) | 2002-02-22 | 2007-05-01 | Sumitomo Metal Mining Co., Ltd. | Method for manufacturing semiconductor module |
| US7187496B2 (en) | 2002-03-14 | 2007-03-06 | Tdk Corporation | Manufacturing method of optical device, optical device, manufacturing method of faraday rotator, and optical communication system |
| CN1296751C (en) * | 2004-10-14 | 2007-01-24 | 厦门大学 | High speed mini type magnetic light switch |
| JP2019174703A (en) * | 2018-03-29 | 2019-10-10 | アンリツ株式会社 | Wavelength sweep light source, ofdr device using the same, and measuring method |
| CN116874285A (en) * | 2023-06-26 | 2023-10-13 | 北京镓创科技有限公司 | Crucible for growing gallium oxide crystal and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3237031B2 (en) | 2001-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3237031B2 (en) | Bismuth-substituted rare earth iron garnet single crystal film, optical isolator and magneto-optical switch | |
| US5898516A (en) | Faraday rotator having a rectangular shaped hysteresis | |
| JP3198053B2 (en) | Products made of magneto-optical material with low magnetic moment | |
| US4671621A (en) | Optical systems with antireciprocal polarization rotators | |
| US5608570A (en) | Article comprising a magneto-optic material having low magnetic moment | |
| JP3458865B2 (en) | Low saturation magnetic field bismuth-substituted rare earth iron garnet single crystal and its use | |
| JPH07104225A (en) | Faraday rotator | |
| EP1659440B1 (en) | Magneto-optical device | |
| JP4400959B2 (en) | Garnet crystal for Faraday rotator and optical isolator having the same | |
| EP0785454A1 (en) | Faraday rotator for magneto-optic sensors | |
| JPH07104224A (en) | Non-reciprocal optical device | |
| JP3037474B2 (en) | Faraday rotator | |
| JP2567697B2 (en) | Faraday rotation device | |
| JPH1031112A (en) | Faraday rotator showing square hysteresis | |
| JP2786016B2 (en) | Optical isolator | |
| JPS59147320A (en) | Optical non-reciprocal element | |
| JP2001142039A (en) | Hard magnetic garnet thick film material and method for manufacturing the same | |
| JP3936451B2 (en) | Optical attenuator module | |
| JPH08201745A (en) | Faraday effect element, optical device using the same, and manufacturing method thereof | |
| JP2000180791A (en) | Optical isolator | |
| JPH0933870A (en) | Low saturation magnetic field Faraday rotator | |
| JPH04247423A (en) | optical isolator | |
| JPS645283B2 (en) | ||
| JPH0856039A (en) | Optical signal changeover switch using garnet thick film | |
| JPH0756115A (en) | Optical isolator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010905 |
|
| LAPS | Cancellation because of no payment of annual fees |