JPH0621785B2 - Shape measurement method - Google Patents
Shape measurement methodInfo
- Publication number
- JPH0621785B2 JPH0621785B2 JP60141739A JP14173985A JPH0621785B2 JP H0621785 B2 JPH0621785 B2 JP H0621785B2 JP 60141739 A JP60141739 A JP 60141739A JP 14173985 A JP14173985 A JP 14173985A JP H0621785 B2 JPH0621785 B2 JP H0621785B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- height
- signal waveform
- width
- correlation coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000691 measurement method Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004088 simulation Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Closed-Circuit Television Systems (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は微細加工により形成されたパターンの形状測定
方法に関するものである。The present invention relates to a method for measuring the shape of a pattern formed by microfabrication.
（従来の技術） 従来、微細加工により形成されたパターン上にレーザ光
あるいは電子線を走査し、検出器によって得られた信号
にしきい値レベルを設定し、信号の電圧がしきい値レベ
ルになる２点からパターンの線幅を測定していた。また
パターンの高さと側壁角はパターンを破壊し断面を出し
て電子顕微鏡で測定していた。(Prior Art) Conventionally, a pattern formed by fine processing is scanned with a laser beam or an electron beam, a threshold level is set to a signal obtained by a detector, and the voltage of the signal becomes the threshold level. The line width of the pattern was measured from two points. The height of the pattern and the side wall angle were measured with an electron microscope after breaking the pattern and exposing the cross section.
（発明が解決しようとする問題点） しかし、この方法で求まる線幅はパターンの形状の一部
を測定しているだけであり、パターン形状の全体は分ら
なかった。また電子顕微鏡を用いる方法は破壊測定であ
るという大きな欠点があった。本発明の目的は、上記の
ような欠点を除去した形状測定方法を提供することにあ
る。(Problems to be Solved by the Invention) However, the line width obtained by this method only measures a part of the pattern shape, and the entire pattern shape is not known. In addition, the method using an electron microscope has a major drawback that it is destructive measurement. An object of the present invention is to provide a shape measuring method that eliminates the above-mentioned drawbacks.
（問題を解決するための手段） すなわち、本発明は基体上のパターン上に荷電粒子線を
走査し、検出器によって得られた出力信号波形と、種々
の幅、高さ、側壁角度のパターンに対してシミュレーシ
ョンにより得られた信号波形との統計学上の相関係数を
求め、相関係数の最も大きい幅、高さ、側壁角度により
該パターンの形状を求めることを特徴とする形状測定方
法である。(Means for Solving the Problem) That is, according to the present invention, a pattern on a substrate is scanned with a charged particle beam, and an output signal waveform obtained by a detector and patterns of various widths, heights, and sidewall angles are obtained. On the other hand, a shape measuring method characterized by obtaining a statistical correlation coefficient with a signal waveform obtained by simulation, and obtaining the shape of the pattern by the width, height, and side wall angle having the largest correlation coefficient. is there.
（作用） 以下に本発明を図面を参照しながら説明する。(Operation) The present invention will be described below with reference to the drawings.
第１図に示すように、基体１上のパターン２に荷電粒子
線３を照射し、荷電粒子線３を走査する。同時に、基体
１及びパターン２から脱出してくる反射荷電粒子４を検
出器５で検出する。時間に応じて検出器５からは第２図
のように出力信号波形が得られる。荷電粒子線３の走査
速度をｓ、走査開始点の位置をx0とすれば、走査開始後
の時間ｔは、位置ｘとｘ＝x0＋stで関係づけられる。一
方、基体１上のパターン２はパターン２の基体１と接す
る幅、パターン２の高さ、パターン２の側壁角度により
特徴づけられる。基体１の材質、パターン２の材質をも
つ物に対して、種々の幅、高さ、側壁角度についてシミ
ュレーションにより第３図のような信号波形を求めてお
く。As shown in FIG. 1, the pattern 2 on the substrate 1 is irradiated with the charged particle beam 3, and the charged particle beam 3 is scanned. At the same time, the detector 5 detects the reflected charged particles 4 that escape from the substrate 1 and the pattern 2. An output signal waveform is obtained from the detector 5 according to time as shown in FIG. Assuming that the scanning speed of the charged particle beam 3 is s and the position of the scanning start point is x 0 , the time t after the start of scanning is related to the position x by x = x 0 + st. On the other hand, the pattern 2 on the substrate 1 is characterized by the width of the pattern 2 in contact with the substrate 1, the height of the pattern 2, and the sidewall angle of the pattern 2. For objects having the material of the base 1 and the material of the pattern 2, signal waveforms as shown in FIG. 3 are obtained by simulation for various widths, heights, and side wall angles.
次に、パターン２の幅、高さ、側壁角度を求める第１の
方法について述べる。求める幅、高さ、側壁角度の精度
がそれぞれΔＷ，ΔＨ，ΔＡの場合、先のシミュレーシ
ョンでは幅、高さ、側壁角度がそれぞれΔＷ，ΔＨ，Δ
Ａの間隔で信号波形を求めておく。次に検出器５からの
出力信号波形とシミュレーションによって求められた種
々の幅、高さ、側壁角度に対する信号波形との統計学上
の相関係数を求める。相関係数の最も大きい幅、高さ、
側壁角度によってパターンの形状が特定される。Next, a first method for obtaining the width, height and sidewall angle of the pattern 2 will be described. If the required width, height, and side wall angle accuracy are ΔW, ΔH, and ΔA, respectively, the width, height, and side wall angle are ΔW, ΔH, and Δ in the above simulation.
The signal waveform is obtained at intervals of A. Next, a statistical correlation coefficient between the output signal waveform from the detector 5 and the signal waveform with respect to various widths, heights, and sidewall angles obtained by simulation is obtained. The largest width, height of the correlation coefficient,
The shape of the pattern is specified by the side wall angle.
次に、パターン２の幅、高さ、側壁角度を求める第２の
方法について述べる。先のシミュレーションでは、幅、
高さ、側壁角度についてそれぞれ３点以上信号波形を求
めておく。次に、検出器５からの出力信号波形とシミュ
レーションによって求められた、種々の幅、高さ、側壁
角度に対する信号波形との統計学上の相関係数を求め、
相関係数の最も大きい、幅W0、高さH0、側壁角度A0の組
み合せを求める。次に、幅W0およびW0より１つ小さい幅
W1およびW0より１つ大きい幅W2および高さH0およびHOよ
り１つ小さい高さH1およびH0より１つ大きい高さH2およ
び側壁角度A0およびA0より１つ小さい側壁角度A1および
A0より１つ大きい側壁角度A2の組み合せからなる２７点
の信号波形から、幅、高さ、側壁角度にそれぞれ必要な
精度ΔＷ，ΔＨ，ΔＡごとの点について内挿により信号
波形を求める。次に、検出器５からの出力信号波形と内
挿により求められた種々の幅、高さ、側壁角度に対する
信号波形との相関係数を求める。相関係数の最も大きい
幅、高さ、側壁角度によってパターンの形状が特定され
る。Next, a second method for obtaining the width, height and sidewall angle of the pattern 2 will be described. In the previous simulation, the width,
Three or more signal waveforms are obtained for the height and the side wall angle. Next, a statistical correlation coefficient between the output signal waveform from the detector 5 and the signal waveform with respect to various widths, heights, and sidewall angles obtained by simulation is obtained,
The combination of the largest correlation coefficient, width W 0 , height H 0 , and side wall angle A 0 is obtained. Then the widths W 0 and one less than W 0
Width W 2 and height one greater than W 1 and W 0 and height H 0 and one less than H O height H 1 and one greater than H 0 Height H 2 and sidewall angle one greater than A 0 and A 0 Small sidewall angle A 1 and
A signal waveform is obtained by interpolation from 27 signal waveforms consisting of a combination of side wall angles A 2 which is one larger than A 0, at points of accuracy ΔW, ΔH, and ΔA required for width, height, and side wall angle, respectively. Next, the correlation coefficient between the output signal waveform from the detector 5 and the signal waveform with respect to various widths, heights, and sidewall angles obtained by interpolation is obtained. The shape of the pattern is specified by the width, height, and side wall angle having the largest correlation coefficient.
（実施例） シリコン基板上に金を蒸着後、金を線状パターンに加工
した。次に、シリコン基板上の金の上に加速電圧４kVの
電子ビームを走査し、半導体検出器により反射電子を検
出して、出力信号波形を計算機のメモリ上に蓄積した。
この実施例では前記（作用）の項の第１の方法を用いて
いる。次に、シリコン基板上の金に対して、幅０．５μ
ｍから２μｍ、高さ０．２μｍから１μｍ、側壁角度６
０゜から８０゜について、それぞれ０．０２μｍ、０．
１μｍ、２゜の間隔であらかじめ化学の領域３６−８の
５４９頁から５５６頁に記載されているモンテカルロ・
シミュレーションによって求められている信号波形との
相関係数を求めた。この結果、相関係数が０．９８と最
も大きかった幅１．７４μｍ、高さ０．７μｍ、側壁角
度６４゜によりパターンの形状が特定された。(Example) After depositing gold on a silicon substrate, the gold was processed into a linear pattern. Next, an electron beam with an accelerating voltage of 4 kV was scanned on the gold on the silicon substrate, the backscattered electrons were detected by the semiconductor detector, and the output signal waveform was stored in the memory of the computer.
In this embodiment, the first method described in the section (action) is used. Next, for the gold on the silicon substrate, the width is 0.5μ
m to 2 μm, height 0.2 μm to 1 μm, sidewall angle 6
From 0 ° to 80 °, 0.02 μm, 0.
1 μm, at intervals of 2 °, Monte Carlo, described in advance in the area of chemistry 36-8, pages 549-556.
The correlation coefficient with the signal waveform obtained by the simulation was obtained. As a result, the shape of the pattern was specified by the maximum correlation coefficient of 0.98, width of 1.74 μm, height of 0.7 μm, and sidewall angle of 64 °.
（発明の効果） 従って、本発明によれば基体上のパターンの幅、高さ、
側壁角度を特定してパターン形状を求めることができ
る。Therefore, according to the present invention, the width, height, and
The pattern shape can be obtained by specifying the side wall angle.
第１図は出力信号波形を得る方法を表わす模式図、第２
図は出力信号波形図、第３図はシミュレーションにより
得られた信号波形図である。 １……基体、２……パターン、３……荷電粒子線、４…
…反射荷電粒子線、５……検出器。FIG. 1 is a schematic diagram showing a method of obtaining an output signal waveform, and FIG.
FIG. 3 is an output signal waveform diagram, and FIG. 3 is a signal waveform diagram obtained by simulation. 1 ... Substrate, 2 ... Pattern, 3 ... Charged particle beam, 4 ...
… Reflected charged particle beam, 5 …… Detector.
Claims (1)
し、検出器によって得られた出力信号波形と、種々の
幅、高さ、側壁角度のパターンに対してシミュレーショ
ンにより得られた信号波形との統計学上の相関係数を求
め、相関係数の最も大きい幅、高さ、側壁角度により該
パターンの形状を求めることを特徴とする形状測定方
法。1. An output signal waveform obtained by scanning a pattern on a substrate with a charged particle beam and a signal waveform obtained by simulation for patterns of various widths, heights and sidewall angles. A shape measuring method, characterized in that a statistical correlation coefficient with is obtained, and the shape of the pattern is obtained from the width, height, and side wall angle having the largest correlation coefficient.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60141739A JPH0621785B2 (en) | 1985-06-28 | 1985-06-28 | Shape measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60141739A JPH0621785B2 (en) | 1985-06-28 | 1985-06-28 | Shape measurement method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS622116A JPS622116A (en) | 1987-01-08 |
| JPH0621785B2 true JPH0621785B2 (en) | 1994-03-23 |
Family
ID=15299076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60141739A Expired - Lifetime JPH0621785B2 (en) | 1985-06-28 | 1985-06-28 | Shape measurement method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0621785B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2734337B2 (en) * | 1993-05-19 | 1998-03-30 | 日本電気株式会社 | Signal synthesis method and apparatus |
| JP2001304840A (en) * | 2000-04-26 | 2001-10-31 | Advantest Corp | Electron beam length measuring apparatus and length measuring method |
| JP2007218711A (en) * | 2006-02-16 | 2007-08-30 | Hitachi High-Technologies Corp | Measuring method of measurement target pattern using electron microscope device |
| JP5319931B2 (en) * | 2008-02-22 | 2013-10-16 | 株式会社日立ハイテクノロジーズ | Electron microscope system and pattern dimension measuring method using the same |
| DE112008004172T5 (en) | 2008-12-26 | 2012-03-15 | Advantest Corporation | Structural measuring device and structural measuring method |
| JP5564276B2 (en) | 2010-01-28 | 2014-07-30 | 株式会社日立ハイテクノロジーズ | Image generation device for pattern matching |
| JP2013200319A (en) * | 2013-07-10 | 2013-10-03 | Hitachi High-Technologies Corp | Electron microscope system and pattern dimension measuring method using the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51147260A (en) * | 1975-06-13 | 1976-12-17 | Fujitsu Ltd | Inspecting method of resist pattern |
| JPS61290312A (en) * | 1985-06-19 | 1986-12-20 | Hitachi Ltd | Cross-sectional shape measuring device |
| JPS61290313A (en) * | 1985-06-19 | 1986-12-20 | Hitachi Ltd | Three-dimensional shape measuring device |
-
1985
- 1985-06-28 JP JP60141739A patent/JPH0621785B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS622116A (en) | 1987-01-08 |
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