JPH06209067A - Lead frame for electronic parts - Google Patents
Lead frame for electronic partsInfo
- Publication number
- JPH06209067A JPH06209067A JP275493A JP275493A JPH06209067A JP H06209067 A JPH06209067 A JP H06209067A JP 275493 A JP275493 A JP 275493A JP 275493 A JP275493 A JP 275493A JP H06209067 A JPH06209067 A JP H06209067A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- die pad
- lead
- electronic component
- partition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
- H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/48998—Alignment aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
(57)【要約】
【目的】 金属細線の変形によるショートや断線を確実
に防止して品質に対する信頼性を向上できる電子部品用
リードフレームを提供する。
【構成】 電子部品素子５が配置されるダイパット４
と、該電子部品素子５を外部に導出するリード３とから
なるリードフレーム２を構成し、このリード３と電子部
品素子５とを金属細線６で接続する場合に、上記ダイパ
ット４に各金属細線６を非接触状態に保持する仕切り部
１０を設ける。
(57) [Abstract] [Purpose] To provide a lead frame for an electronic component, which can reliably prevent short circuit and disconnection due to deformation of a thin metal wire and improve reliability in quality. [Configuration] Die pad 4 on which electronic component element 5 is arranged
And a lead frame 2 which is composed of a lead 3 for guiding the electronic component element 5 to the outside. When the lead 3 and the electronic component element 5 are connected by a metal thin wire 6, each metal thin wire is connected to the die pad 4. A partition portion 10 for holding 6 in a non-contact state is provided.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えばＩＣ，ＬＳＩ等
の半導体素子を製品に組立てる際に用いられる電子部品
用リードフレームに関し、詳細には金属細線の変形によ
るショートや断線を防止して品質に対する信頼性を向上
できるようにした構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for electronic parts used when assembling semiconductor elements such as ICs and LSIs into products. The present invention relates to a structure capable of improving the reliability with respect to.
【０００２】[0002]
【従来の技術】例えば、ＩＣ等の半導体部品を組立てる
場合、図８及び図９に示すような方法が一般に採用され
ている。まず、帯状の金属板１をエッチング，あるいは
プレスで打ち抜いて多数のリードフレーム２を形成す
る。このリードフレーム２は、平行に延びる一対のフレ
ーム２ａ，２ｂに内側に延びる多数のリード３，及びダ
イパット４を一体形成した構造である（図８(a),図８
(b) 参照) 。2. Description of the Related Art For example, when assembling a semiconductor component such as an IC, a method as shown in FIGS. 8 and 9 is generally adopted. First, the strip-shaped metal plate 1 is etched or punched by a press to form a large number of lead frames 2. The lead frame 2 has a structure in which a large number of leads 3 extending inward and a die pad 4 are integrally formed on a pair of frames 2a and 2b extending in parallel (FIGS. 8A and 8A).
(See (b)).
【０００３】そして上記リードフレーム２のダイパット
４上に半導体チップ５を接着固定し、該半導体チップ５
の各入出力電極５ａと各リード３のインナリード部３ａ
とをワイヤボンディング法により金属細線６で接続して
配線を行う（図９(a) 参照）。次いで、上記半導体チッ
プ５のインナリード部３ａの外表面をエポキシ樹脂７で
モールドするとともに、各リード３のアウタリード部３
ｂを外方に突出させる。この後、上記両フレーム２ａ，
２ｂをアウタリード部３ｂから切断し、これにより半導
体部品８を製造する。Then, the semiconductor chip 5 is adhered and fixed onto the die pad 4 of the lead frame 2, and the semiconductor chip 5 is attached.
Each input / output electrode 5a and the inner lead portion 3a of each lead 3
And are connected by a metal thin wire 6 by a wire bonding method (see FIG. 9 (a)). Next, the outer surface of the inner lead portion 3a of the semiconductor chip 5 is molded with an epoxy resin 7, and the outer lead portion 3 of each lead 3 is molded.
b is projected outward. After this, both frames 2a,
2b is cut from the outer lead portion 3b, whereby the semiconductor component 8 is manufactured.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら上記従来
のリードフレーム２では、図１０に示すように、ワイヤ
ボンディング法で金属細線６を配線する場合、該金属細
線６の線径は極めて細いことから何らかの外力で変形し
易く、その結果金属細線６同士が接触したり，ダイパッ
ト４に接触したりしてショートするおそれがある。また
樹脂モールドする際に該樹脂により金属細線６が押し流
されて断線する場合もあり、品質に対する信頼性が低い
という問題点がある。However, in the above-described conventional lead frame 2, as shown in FIG. 10, when the metal thin wire 6 is wired by the wire bonding method, the wire diameter of the metal thin wire 6 is extremely small, so It is easily deformed by an external force, and as a result, the thin metal wires 6 may come into contact with each other or the die pad 4 to cause a short circuit. In addition, when the resin is molded, the metal fine wires 6 may be washed away by the resin and may be broken, resulting in a problem that the reliability of quality is low.
【０００５】本発明は上記従来の問題点を解決するため
になされたもので、金属細線の変形によるショートや断
線を防止でき、品質に対する信頼性を向上できる電子部
品用リードフレームを提供することを目的としている。The present invention has been made to solve the above-mentioned conventional problems, and it is an object of the present invention to provide a lead frame for electronic parts, which can prevent short-circuiting and disconnection due to the deformation of thin metal wires and improve the reliability of quality. Has an aim.
【０００６】[0006]
【課題を解決するための手段】本発明は、電子部品素子
が配置されるダイパットと、該電子部品素子を外部に導
出するリードとからなり、該リードと上記電子部品素子
とを金属細線で接続するようにした電子部品用リードフ
レームにおいて、上記ダイパットに、各金属細線を非接
触状態に保持する仕切り部を設けたことを特徴としてい
る。DISCLOSURE OF THE INVENTION The present invention comprises a die pad on which an electronic component element is arranged and a lead for leading the electronic component element to the outside, and the lead and the electronic component element are connected by a thin metal wire. In the lead frame for electronic parts configured as described above, the die pad is characterized by being provided with a partition portion for holding each metal thin wire in a non-contact state.
【０００７】[0007]
【作用】本発明に係る電子部品用リードフレームによれ
ば、ダイパットに仕切り部を設けたので、この仕切り部
の間に各金属細線を配線することにより金属細線同士，
ダイパットとの接触を防止できる。また金属細線を仕切
り部間で支持することから、モールド樹脂の注入時に押
し流されることはない。その結果、金属細線の変形によ
るショートや断線を確実に防止でき、品質に対する信頼
性を向上できる。According to the lead frame for electronic parts of the present invention, since the partition parts are provided on the die pad, the metal thin wires are connected to each other by wiring the metal thin wires between the partition parts.
It is possible to prevent contact with the die pad. Further, since the thin metal wire is supported between the partition portions, it is not washed away when the molding resin is injected. As a result, it is possible to reliably prevent a short circuit or a wire break due to the deformation of the thin metal wire, and improve the reliability of quality.
【０００８】[0008]
【実施例】以下、本発明の実施例を図について説明す
る。図１及び図２は本発明の第１実施例による電子部品
用リードフレームを説明するための図である。図中、図
８及び図９と同一符号は同一又は相当部分を示す。本実
施例のリードフレーム２は、一対のフレーム２ａ，２ｂ
と該フレーム２ａ，２ｂから内側に延びる多数のリード
３，及びダイパット４とを一体形成してなり、基本的構
造は上述のものと同様である。また、上記ダイパット４
の上面にはＩＣ，ＬＳＩ等の半導体素子５が接着固定さ
れており、該半導体素子５の電極５ａと上記各リード３
のインナリード部３ａとは金属細線６で接続されてい
る。Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 are views for explaining a lead frame for electronic parts according to a first embodiment of the present invention. In the figure, the same reference numerals as those in FIGS. 8 and 9 indicate the same or corresponding portions. The lead frame 2 of this embodiment is composed of a pair of frames 2a and 2b.
And a large number of leads 3 extending inward from the frames 2a and 2b and the die pad 4 are integrally formed, and the basic structure is the same as that described above. Also, the die pad 4
A semiconductor element 5 such as an IC or an LSI is adhered and fixed to the upper surface of the semiconductor element 5. The electrode 5a of the semiconductor element 5 and the leads 3 are
The inner lead portion 3a of the above is connected by a thin metal wire 6.
【０００９】上記ダイパット４の両縁部４ａ，４ｂには
本実施例の特徴をなす仕切り部１０が配設されている。
この仕切り部１０は大略円錐状の絶縁性樹脂からなり、
この各仕切り部１０は接着剤で固着されている。また各
仕切り部１０の下部は互いに密着しており、両側部の仕
切り部１０の間に半導体素子５が配置されている。そし
て各仕切り部１０の間に上記金属細線６が配線されてお
り、これにより各金属細線６は非接触状態に保持されて
いる。ここで、上記仕切り部１０は、例えば絶縁性接着
剤を採用し、該接着剤をダイパット４上に略円錐状をな
すように直接塗布し、この後硬化させて形成してもよ
い。At both edges 4a and 4b of the die pad 4 are provided partitioning portions 10 which characterize the present embodiment.
The partition 10 is made of a substantially conical insulating resin,
Each partition 10 is fixed by an adhesive. The lower parts of the partition parts 10 are in close contact with each other, and the semiconductor element 5 is arranged between the partition parts 10 on both sides. The metal thin wires 6 are laid between the partitioning portions 10, whereby the metal thin wires 6 are held in a non-contact state. Here, the partition portion 10 may be formed by using, for example, an insulating adhesive, applying the adhesive directly on the die pad 4 so as to form a substantially conical shape, and then curing the adhesive.
【００１０】本実施例によれば、各仕切り部１０をダイ
パット４上に配置し、該各仕切り部１０の間に金属細線
６を配線したので、何らかの外力が加わっても金属細線
６同士が接触したり，あるいはダイパット４と接触した
りすることはない。また各仕切り部１０の間で金属細線
６を支持したので、モールディング時の樹脂で押し流さ
れることはない。その結果、金属細線６の変形によるシ
ョートや断線を確実に防止でき、製品の歩留まりを向上
できるとともに、品質に対する信頼性を向上できる。According to this embodiment, since the partition parts 10 are arranged on the die pad 4 and the thin metal wires 6 are arranged between the respective partition parts 10, the thin metal wires 6 come into contact with each other even if some external force is applied. It does not come into contact with the die pad 4. Further, since the thin metal wires 6 are supported between the partition portions 10, they are not washed away by the resin during molding. As a result, it is possible to surely prevent a short circuit and a disconnection due to the deformation of the thin metal wires 6, improve the product yield, and improve the reliability of quality.
【００１１】また、本実施例では、ダイパット４の両縁
部４ａ，４ｂに仕切り部１０を配設し、この両側部の仕
切り部１０の間に半導体素子５を配置したので、この仕
切り部１０で半導体素子５を位置決めでき、該素子５を
搭載する際の位置ずれを防止できる。Further, in this embodiment, since the partition portions 10 are arranged on both edge portions 4a and 4b of the die pad 4 and the semiconductor element 5 is arranged between the partition portions 10 on both sides, the partition portions 10 are formed. Thus, the semiconductor element 5 can be positioned, and the positional deviation when mounting the element 5 can be prevented.
【００１２】図３及び図４は、本発明の第２実施例を説
明するための図である。本実施例は、上記ダイパット４
と略同じ大きさからなる絶縁性樹脂板１１の両縁部に所
定間隔をあけて凸状の仕切り部１２を一体形成した例で
ある。また上記樹脂板１１の中央部には半導体素子５が
挿入配置される位置決め孔１１ａが形成されており、こ
の樹脂板１１は接着剤１３を介して上記ダイパット４に
固着されている。さらに上記各仕切り部１２の金属細線
６が当接するエッジにはＲ部１２ａが形成されており、
これにより金属細線６への応力集中を回避するようにな
っている。FIGS. 3 and 4 are views for explaining the second embodiment of the present invention. In this embodiment, the die pad 4 is used.
This is an example in which convex partitioning portions 12 are integrally formed on both edge portions of an insulating resin plate 11 having substantially the same size as the above with a predetermined interval. Further, a positioning hole 11a into which the semiconductor element 5 is inserted and arranged is formed in the central portion of the resin plate 11, and the resin plate 11 is fixed to the die pad 4 with an adhesive 13. Further, an R portion 12a is formed at the edge of each partition portion 12 with which the thin metal wire 6 abuts,
As a result, stress concentration on the thin metal wires 6 is avoided.
【００１３】本実施例によれば、各仕切り部１２の間に
金属細線６を配線することによりショート，断線を防止
でき、また素子搭載時の位置ずれを防止でき、上記実施
例と同様の効果が得られる。According to this embodiment, by wiring the metal thin wires 6 between the respective partition portions 12, it is possible to prevent short-circuiting and disconnection, and it is possible to prevent positional displacement when the device is mounted. Is obtained.
【００１４】図５ないし図７は、本発明の第３実施例を
説明するための図である。この実施例は、リードフレー
ム２のダイパット４の両縁部４ａ，４ｂを波状に折り曲
げ形成し、このダイパット４の上面に絶縁層１６を被覆
形成することにより仕切り部１５を構成した例である。
この仕切り部１５は、図６に示すように、上記ダイパッ
ト４の両縁部４ａ，４ｂを少し大きめに形成して加工代
Ａを設けるとともに、ダイパット４の上面に絶縁層１６
を被覆し、この状態で上記両縁部４ａ，４ｂを折り曲げ
加工して形成されたものである。この場合、仕切り部１
５を折り曲げ形成した後、絶縁層１６を形成してもよ
い。5 to 7 are views for explaining the third embodiment of the present invention. This embodiment is an example in which both edge portions 4a and 4b of the die pad 4 of the lead frame 2 are bent and formed in a wave shape, and an insulating layer 16 is formed on the upper surface of the die pad 4 to form the partition portion 15.
As shown in FIG. 6, the partition portion 15 has both edges 4a and 4b of the die pad 4 formed to be slightly larger to provide a machining allowance A, and an insulating layer 16 on the upper surface of the die pad 4.
Is formed by bending both edges 4a and 4b in this state. In this case, the partition section 1
The insulating layer 16 may be formed after bending 5 is formed.
【００１５】本実施例においても、各仕切り部１５の間
に金属細線６を配線することによりショート，断線を防
止でき、上記実施例と同様の効果が得られる。また、本
実施例では、ダイパット４の両縁部４ａ，４ｂを波状に
湾曲形成して仕切り部１５を形成したので、上記各実施
例に比べて部品点数の増加を回避できる。Also in the present embodiment, by wiring the metal thin wires 6 between the partition portions 15, it is possible to prevent short circuit and disconnection, and the same effect as the above embodiment can be obtained. In addition, in this embodiment, since the partition portion 15 is formed by forming both edge portions 4a and 4b of the die pad 4 in a wavy shape, it is possible to avoid an increase in the number of parts as compared with the above-described respective embodiments.
【００１６】なお、上記仕切り部１５は、上述の金属板
をプレスで打ち抜いてリードフレーム２を形成する際に
同時に形成してもよく、このようにした場合は部品点数
の増加を回避しながら、製造工程を簡略化できる。The partition portion 15 may be formed at the same time when the lead frame 2 is formed by punching the above metal plate with a press. In this case, while avoiding an increase in the number of parts, The manufacturing process can be simplified.
【００１７】[0017]
【発明の効果】以上のように本発明に係る電子部品用リ
ードフレームによれば、ダイパットに各金属細線を非接
触状態に保持する仕切り部を設けたので、金属細線の変
形によるショートや断線を確実に防止でき、品質に対す
る信頼性を向上できる効果がある。As described above, according to the lead frame for electronic parts of the present invention, since the die pad is provided with the partitioning portion for holding each metal thin wire in a non-contact state, short-circuit or disconnection due to deformation of the metal thin wire is prevented. There is an effect that it can be surely prevented and the reliability of quality can be improved.
【図１】本発明の第１実施例による電子部品用リードフ
レームを説明するための斜視図である。FIG. 1 is a perspective view illustrating an electronic component lead frame according to a first exemplary embodiment of the present invention.
【図２】上記実施例の仕切り部を示す斜視図である。FIG. 2 is a perspective view showing a partition section of the above embodiment.
【図３】本発明の第２実施例によるリードフレームを説
明するための斜視図である。FIG. 3 is a perspective view illustrating a lead frame according to a second exemplary embodiment of the present invention.
【図４】上記実施例の仕切り部を示す分解斜視図であ
る。FIG. 4 is an exploded perspective view showing a partition section of the above embodiment.
【図５】本発明の第３実施例によるリードフレームを説
明するための斜視図である。FIG. 5 is a perspective view illustrating a lead frame according to a third exemplary embodiment of the present invention.
【図６】上記実施例の仕切り部の加工方法を示す図であ
る。FIG. 6 is a diagram showing a method of processing the partitioning portion of the above embodiment.
【図７】上記実施例の仕切り部を示す斜視図である。FIG. 7 is a perspective view showing a partition section of the above embodiment.
【図８】一般的なリードフレームの製造方法を説明する
ための図である。FIG. 8 is a diagram for explaining a general lead frame manufacturing method.
【図９】一般的な半導体部品の製造方法を説明するため
の図である。FIG. 9 is a diagram for explaining a general method for manufacturing a semiconductor component.
【図１０】従来のリードフレームの問題点を示す斜視図
である。FIG. 10 is a perspective view showing a problem of a conventional lead frame.
２ リードフレーム ３ リード ４ ダイパット ５ 半導体素子（電子部品素子） ６ 金属細線 １０，１２，１５ 仕切り部 2 lead frame 3 lead 4 die pad 5 semiconductor element (electronic component element) 6 thin metal wire 10, 12, 15 partition section
Claims (1)
と、該電子部品素子を外部に導出するリードとからな
り、該リードと上記電子部品素子とを金属細線で接続す
るようにした電子部品用リードフレームにおいて、上記
ダイパットに、各金属細線を非接触状態に保持する仕切
り部を設けたことを特徴とする電子部品用リードフレー
ム。1. A lead for an electronic component, comprising a die pad on which the electronic component element is arranged and a lead for leading the electronic component element to the outside, and the lead and the electronic component element are connected by a thin metal wire. In the frame, a lead frame for an electronic component, characterized in that the die pad is provided with a partition portion for holding each thin metal wire in a non-contact state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP275493A JPH06209067A (en) | 1993-01-11 | 1993-01-11 | Lead frame for electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP275493A JPH06209067A (en) | 1993-01-11 | 1993-01-11 | Lead frame for electronic parts |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06209067A true JPH06209067A (en) | 1994-07-26 |
Family
ID=11538139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP275493A Withdrawn JPH06209067A (en) | 1993-01-11 | 1993-01-11 | Lead frame for electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06209067A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5864174A (en) * | 1995-10-24 | 1999-01-26 | Oki Electric Industry Co., Ltd. | Semiconductor device having a die pad structure for preventing cracks in a molding resin |
-
1993
- 1993-01-11 JP JP275493A patent/JPH06209067A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5864174A (en) * | 1995-10-24 | 1999-01-26 | Oki Electric Industry Co., Ltd. | Semiconductor device having a die pad structure for preventing cracks in a molding resin |
| US6177725B1 (en) | 1995-10-24 | 2001-01-23 | Oki Electric Industry Co., Ltd. | Semiconductor device having an improved structure for preventing cracks, improved small-sized semiconductor and method of manufacturing the same |
| US6459145B1 (en) * | 1995-10-24 | 2002-10-01 | Oki Electric Industry Co., Ltd. | Semiconductor device having an improved structure for preventing cracks, and improved small-sized semiconductor |
| US6569755B2 (en) | 1995-10-24 | 2003-05-27 | Oki Electric Industry Co., Ltd. | Semiconductor device having an improved structure for preventing cracks, improved small sized semiconductor and method of manufacturing the same |
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