JPH06204442A - Slid-state image sensing apparatus and manufacture thereof - Google Patents

Abstract

PURPOSE:To obtain a small-sized, thin and lightweight, solid-state imaging apparatus by mounting a solid-state image sensing device on a glass substrate in face down manner. CONSTITUTION:On a glass substrate 8, a solid-state image sensing apparatus is formed by a group of electrode terminals 9 for outputting electric signals to the outside, a projecting frame 10 of an insulation resin around the group of electrode terminals 9 for outputting electric signals to the outside, a solid state imaging device 3 having a projecting electrode 12 connected by a conducting bonding agent 11 to the surface of the glass substrate 8 on which the group of electrode terminals 9 and the projecting frame 10 of an insulation resin are formed, and a sealing resin 13 which seals the gap between the solid state image sensing device 3 and the glass substrate 8 except for a photo detecting area 3a of the solid-state image sensing device 3.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device for protecting a solid-state image pickup device and realizing a small and thin solid-state image pickup device and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as a method of manufacturing a solid-state image pickup device, a mainstream method has generally been to mount a solid-state image pickup device represented by a CCD on a package having an insulating base made of ceramic (hereinafter referred to as a ceramic package).

A conventional solid-state image pickup device will be described below with reference to the drawings. FIG. 7 is a cross-sectional view showing a conventional solid-state imaging device.

In the conventional solid-state image pickup device shown in FIG. 7, a solid-state image pickup device 3 is mounted in a recess 2a on the upper surface of a ceramic package 2 having a terminal group 1 for outputting an electric signal with the light receiving portion facing upward. The electrode 4 around the inside of the recess 2a on the upper surface of the ceramic package 2 and the electrode formed around the surface of the solid-state image sensor 3 are formed by a wire bonding method such as a thin metal wire 5 such as aluminum (Al) or gold (Au).
It is electrically connected to the solid-state image pickup device 3 and has a configuration in which the upper opening portion of the ceramic package 2 is sealed like a lid with a sealing quartz glass 6 for the purpose of protecting the solid-state imaging device 3.

The operation of the conventional solid-state image pickup device configured as described above will be described below.

As shown in FIG. 7, incident light 7 when a subject or the like is photographed passes through a quartz glass 6 for sealing provided on the upper surface of the ceramic package 2 and passes through the solid-state image pickup device 3.
Incident on. The light receiving area on the surface of the solid-state image sensor 3 is formed with 200,000 to 400,000 light receiving portions (not shown) called photodiodes, which differ depending on the product type.
In addition, recently, because the light receiving part itself is becoming finer,
The light receiving sensitivity is lowered, and a microlens made of resin is formed on the light receiving portion in order to increase the light receiving sensitivity. That is, the incident light 7 passes through the quartz glass 6, is condensed by the microlenses on the surface of the light receiving area of the solid-state imaging device 2, and then enters the light receiving portion, is converted into an electric signal, and is processed as image data.

Next, a conventional method for manufacturing a solid-state image pickup device will be described with reference to the drawings. 8 to 10 are cross-sectional views showing a conventional method for manufacturing a solid-state imaging device.

In the conventional method for manufacturing a solid-state image pickup device shown in FIGS. 8 to 10, the solid-state image pickup device 3 is received in a concave portion 2a on the upper surface of a ceramic package 2 having a terminal group 1 for outputting an electric signal to the outside. The first step of mounting with the upper side facing upward, the electrode 4 around the inside of the recess 2a on the upper surface of the ceramic package 2 and the electrode formed around the surface of the solid-state image sensor 3 by a wire bonding method. 5, a second step of electrically connecting and a third step of sealing the upper opening portion of the ceramic package 2 with a sealing quartz glass 6 for the purpose of protecting the solid-state imaging device 3 in a lid shape. It is configured.

The operation of the conventional solid-state image pickup device having the above structure will be described below.

First, the die bonding step of the first step will be described with reference to FIG. Ceramic package 2
The solid-state imaging device 3 is mounted in the recess 2a on the upper surface of the device with the light receiving part facing upward by a device called a die bonder. The solid-state image sensor 3 and the ceramic package 2 are
It is fixed using a conductive adhesive such as a thermosetting silver paste. The conductive adhesive is cured by heating at a temperature of about 150 ° C.

Next, the wire bonding step of the second step will be described with reference to FIG. After the die-bonding process, the electrode 4 around the inside of the recess 2a on the upper surface of the ceramic package 2 and the electrode formed around the surface of the solid-state imaging device 3 are connected to each other by a wire bonder using a metal of gold (Au) or aluminum (Al). A thin wire 5 is used for electrical connection.
The electrodes 4 inside and around the recess 2a on the upper surface of the ceramic package 2 correspond to the terminal group 1 that outputs an electric signal to the outside of the ceramic package 2.

Finally, the sealing step of the third step will be described with reference to FIG. After wire bonding, the upper opening portion of the ceramic package 2 is sealed in a lid shape with the sealing quartz glass 6 for the purpose of protecting the solid-state imaging device 3 from the outside, thereby realizing a solid-state imaging device. When the lid is sealed with quartz glass 6, the solid-state imaging device 3 after sealing
Since it is necessary to keep the space between the quartz glass 6 and the quartz glass 6 in a vacuum in order to maintain high reliability, sealing is performed in a vacuum state. A thermosetting adhesive is used for sealing, so that the quartz glass 6 and the ceramic package 2 are bonded together.

[0013]

In the structure of the conventional solid-state image pickup device as described above, as a method for electrically connecting the solid-state image pickup device, the electrodes of the ceramic package and the electrodes of the solid-state image pickup device are connected by a thin metal wire. However, a region for forming an electrode for wiring a wire is required in the peripheral part of the solid-state image sensor, and a gap necessary for forming a loop of thin metal wires between the solid-state image sensor and quartz glass for sealing. Must also be provided. Therefore, it is difficult to reduce the size, thickness, and weight.

In manufacturing the solid-state image sensor, a so-called flip-chip method, in which projections are provided on the electrode terminals of the semiconductor element so that the circuit board is directly face down bonded, is applied as a method for solving these problems. A method is conceivable in which protrusions are provided on the electrodes, a circuit is formed on the glass substrate, and the solid-state image sensor is joined face down. However, when joining the circuit board face down, the gap between the element and the circuit board must be sealed with resin, so that the glass substrate and the solid state image sensor, which are necessary conditions for packaging the solid state image sensor. It is difficult to secure a space between and. Also, even if the element is fixed to the glass substrate by some method without encapsulating the resin between the solid-state image sensor and the glass substrate,
The function and humidity resistance of the microlens provided on the surface of the light receiving area of the solid-state image sensor cannot be ensured.

According to the present invention, a solid-state image sensor is mounted face down on a glass substrate, and moisture is allowed to reach the surface of the solid-state image sensor while a space is secured between the solid-state image sensor and the glass substrate. For the purpose of prevention, it is an object of the present invention to provide a small-sized, thin-weighted solid-state imaging device and a method for manufacturing the same by sealing only the peripheral portion of the solid-state imaging device.

[0016]

In order to solve the above-mentioned problems, the solid-state image pickup device of the present invention has the following constitution. That is, a terminal electrode group that outputs an electric signal to the outside on a glass substrate, a protruding frame made of an insulating resin around the terminal electrode group that outputs an electric signal to the outside, an electrode terminal group of the glass substrate and an insulating resin The solid-state image sensor that is bonded to the surface on which the protruding frame is formed with a conductive adhesive, and the gap between the solid-state image sensor and the glass substrate that seals the range excluding the light-receiving area of the solid-state image sensor. It is composed of a stop resin.

Further, the manufacturing method of the present invention comprises a step of forming a protruding electrode on an electrode formed around the solid-state image pickup element,
A step of applying a conductive adhesive to the formed protruding electrode, a step of forming a protruding frame made of resin around the electrode terminal group on the glass substrate on which the electrode terminal group is formed, and an electrode terminal group on the glass substrate On the surface on which the protruding frame made of resin is formed, the solid-state image sensor having the protruding electrode with the conductive adhesive is attached to the electrode terminal of the glass substrate and the conductive adhesive on the solid-state image sensor. Of the process of joining and mounting the protruding electrodes and the gap between the solid-state image sensor and the glass substrate,
And a step of sealing a range other than the light receiving area of the solid-state image sensor with a sealing resin.

[0018]

With the above-described structure, the solid-state image sensor, which has conventionally been required to be mounted on a ceramic package, can be directly mounted face down on a glass substrate, and the size and thickness of the solid-state image sensor can be easily reduced. Can be

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view of this embodiment. In the present embodiment, a group of electrode terminals 9 for outputting an electric signal to the outside on a glass substrate 8, a projection frame 10 made of an insulating resin around the electrode terminal group 9 for outputting an electric signal to the outside, and a glass substrate 8 Of the electrode terminal group 9 and the surface on which the protruding frame 10 made of insulating resin is formed by the conductive adhesive 11
The solid-state image sensor 3 to which 2 is bonded, and the sealing resin 13 that seals the range of the gap between the solid-state image sensor 3 and the glass substrate 8 excluding the light receiving area 3a of the solid-state image sensor 3.

The operation of this embodiment having the above configuration will be described. As shown in FIG. 1, incident light 7 when a subject or the like is photographed passes through a glass substrate 8 and enters a light receiving area 3a of the solid-state image sensor 3. Although not shown,
As described in the conventional example, the light receiving area 3a on the surface of the solid-state image sensor 3 has 200,000 to 400,000 light receiving portions called photodiodes, which are different depending on the product type. In addition, recently, since the light receiving portion itself has become fine, the light receiving sensitivity is lowered, and a microlens made of resin is formed on the light receiving portion in order to increase the light receiving sensitivity.

That is, the incident light 7 passes through the glass substrate 8,
After being collected by the microlens on the surface of the solid-state image sensor 3, the light is incident on the light receiving portion, converted into an electric signal, and the electrode terminal group 9
Is output and processed as image data.

Since the gap between the solid-state image pickup device 3 and the glass substrate 8 is not resin-sealed, the microlenses formed on the light-receiving area 3a of the solid-state image pickup device 3 do not lose their function and the incident light 7 Can be focused on the light receiving portion.

Next, a method of manufacturing a solid-state image pickup device according to an embodiment of the present invention will be described with reference to the drawings.
2 to 6 are process diagrams showing the present embodiment.

According to the manufacturing method of this embodiment, the protruding electrodes 12 are formed on the electrodes formed in the periphery of the solid-state image pickup device 3.
Process and conductive adhesive 1 for the formed protruding electrode 12
The second step of attaching 1 and the third step of forming the protrusion frame 10 made of resin around the electrode terminal group 9 on the glass substrate 8 on which the electrode terminal group 9 is formed, and the electrode terminal group 9 of the glass substrate 8. On the surface on which the protruding frame 10 made of resin is formed, the solid-state imaging device 3 having the protruding electrode 12 with the conductive adhesive 11 is provided on the electrode terminal group 9 of the glass substrate 8 and the solid-state imaging device 3. Fourth step of joining and mounting the protruding electrode 12 with the conductive adhesive 11 and the light receiving area 3 of the solid-state image sensor 3 in the gap between the solid-state image sensor 3 and the glass substrate 8.
a fifth step of sealing the range excluding a with a sealing resin 13.

More specifically, first, in the first step, as shown in FIG. 2, Au balls were formed by using the Au wire bonding method, and the Au balls were formed around the solid-state image sensor 3. Au bumps are formed on the electrodes, and bumps 12 having a height of about 70 μm are formed.

Next, in the second step, as shown in FIG. 3, the conductive adhesive 11 is applied to the bump electrodes 12 formed in the first step by a transfer method. In the transfer method, the solid-state imaging device 3 having the protruding electrodes 12 is brought into contact with the region where the conductive adhesive 11 is thinly extended to about 50 μm with the protruding electrodes 12 facing down, and only the protruding electrodes 12 are electrically conductively bonded. Agent 1
It is a method that can add 1.

Next, in the third step, as shown in the sectional view of FIG. 4A and the plan view of FIG. 4B, a paste containing a thermosetting epoxy material as a main component is applied to a printing method. Then, the protruding frame 10 is formed around the electrode terminal group 9 on the glass substrate 8 (FIG. 4B). The protruding frame 10 is formed in a frame shape below the height (70 μm) of the protruding electrode 12. The electrode terminal group 9 of the glass substrate 8 can be formed by forming a metal layer such as copper (Cu) on the surface of the glass substrate 8 by a well-known evaporation method.

Next, in the fourth step, as shown in FIG. 5, projections with conductive adhesive 11 are applied to the surface of the glass substrate 8 on which the electrode terminal group 9 and the projection frame 10 made of resin are formed. The solid-state imaging device 3 having the electrodes 12 is mounted by bonding the electrode terminal group 9 of the glass substrate 8 and the protruding electrode 12 having the conductive adhesive 11 on the solid-state imaging device 3 to each other. The electrode terminal group 9 of the glass substrate 8 and the protruding electrode 12 with the conductive adhesive 11 on the solid-state imaging element 3 can be accurately joined by using a mounting device having a position recognition device. Then, the conductive adhesive 11 is cured by heating with a heating device, and the protruding frame 10 made of the epoxy material formed on the glass substrate 8 is cured. At that time, the projection frame 10 is cured and at the same time, the glass substrate 8 is cured.
And is adhered to the peripheral portion of the solid-state image sensor 3.

Finally, in the fifth step, as shown in FIG. 6, after the solid-state image sensor 3 and the glass substrate 8 are bonded in the fourth step, the solid state in the gap between the solid-state image sensor 3 and the glass substrate 8 is solid. The outer peripheral area of the image sensor 3 excluding the light receiving area 3a is sealed with the sealing resin 13. Specifically, an epoxy resin having a low moisture permeation is permeated around the bump electrode 12 bonded with the conductive adhesive 11, and then heated to cure the epoxy resin. Here, since the protruding frame 10 is formed, the sealing resin 13 does not penetrate into the light receiving area 3 a of the solid-state image sensor 3. Therefore, the gap between the solid-state image sensor 3 and the glass substrate 8 is not sealed with resin, and the microlenses formed on the light-receiving area 3a of the solid-state image sensor 3 do not lose their functions. Absent. The sealing resin 13 may be an epoxy resin which is a general-purpose sealing resin, and may be a resin having a low coefficient of thermal expansion.

According to the method for manufacturing a solid-state image pickup device according to the present embodiment, the solid-state image pickup device 3 is mounted facedown on the glass substrate 8 so that the thickness of the glass substrate is 0.5 m.
m, the height of the protruding electrode 12 is 0.1 mm, and the thickness of the solid-state image sensor 3 is 0.6 mm, it is possible to reduce the total thickness of the solid-state image sensor to 1.5 mm or less, which is smaller and thinner than ever before. A lightweight solid-state imaging device can be provided.

The height variation of the protruding electrode 12 is ± 5.
The positional accuracy of the mounting of the solid-state imaging device 3 on the glass substrate 8 is within ± 20 μm, and the positional accuracy of the electrode terminal group 9 of the glass substrate 8 and the outer periphery of the glass substrate 8 is ±.
Since the distance is within 5 μm, if the optical device, for example, the camera body is mounted on the outer periphery of the glass substrate on which the solid-state image sensor is mounted as a reference, position correction is performed after mounting the solid-state image sensor package as is conventionally done. There is no need to do such things.

[0033]

EFFECTS OF THE INVENTION According to the present invention, an excellent solid-state image pickup device, which is small in size and thin in weight, can be provided by mounting a solid-state image pickup device in which protruding electrodes are formed on a glass substrate in a face-down manner. It can be applied to handy video cameras and the like, which tend to be lightweight.

[Brief description of drawings]

FIG. 1 is a sectional view showing a solid-state imaging device according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a first step of a method for manufacturing a solid-state imaging device according to an embodiment of the present invention.

FIG. 3 is a sectional view showing a second step of the method for manufacturing the solid-state imaging device according to the embodiment of the present invention.

FIG. 4 is a diagram showing a third step of the method for manufacturing the solid-state imaging device according to the embodiment of the present invention.

FIG. 5 is a sectional view showing a fourth step of the method for manufacturing the solid-state imaging device according to the embodiment of the present invention.

FIG. 6 is a sectional view showing a fifth step of the method for manufacturing the solid-state imaging device according to the embodiment of the present invention.

FIG. 7 is a sectional view showing a conventional solid-state imaging device.

FIG. 8 is a cross-sectional view showing a first step of a conventional solid-state imaging device manufacturing method.

FIG. 9 is a sectional view showing a second step of the conventional method for manufacturing a solid-state imaging device.

FIG. 10 is a sectional view showing a third step of the conventional method for manufacturing a solid-state imaging device.

[Explanation of reference numerals] 1 terminal group 2 ceramic package 2a ceramic package concave portion 3 solid-state imaging device 3a light receiving area 4 electrode 5 metal thin wire 6 quartz glass 7 incident light 8 glass substrate 9 electrode terminal group 10 protruding frame 11 conductive adhesive 12 protrusion Electrode 13 sealing resin

Claims (3)

[Claims] 1. A terminal electrode group for outputting an electric signal to the outside on a glass substrate, a projection frame made of an insulating resin around the terminal electrode group for outputting the electric signal to the outside, and an electrode terminal of the glass substrate. Group and the solid-state imaging device joined to the surface on which the projection frame made of the insulating resin is formed with a conductive adhesive, and the light-receiving of the solid-state imaging device in the gap between the solid-state imaging device and the glass substrate. A solid-state imaging device comprising a sealing resin that seals a range excluding an area. 2. A step of forming a protruding electrode on an electrode formed around a solid-state image sensor, a step of applying a conductive adhesive to the formed protruding electrode, and a glass on which an electrode terminal group is formed. Forming a protruding frame made of resin around the electrode terminal group on the substrate; and applying the conductive adhesive to the surface of the glass substrate on which the electrode terminal group and the protruding frame made of the resin are formed. A solid-state imaging device having a protruding electrode, the step of bonding and mounting the electrode terminal of the glass substrate and the protruding electrode with the conductive adhesive on the solid-state imaging device, and mounting the solid-state imaging device and the solid-state imaging device. And a step of sealing a range excluding the light receiving area of the solid-state imaging device with a sealing resin in a gap between the solid-state imaging device and the glass substrate. 3. In the step of forming a protrusion frame made of resin around the electrode terminal group on a glass substrate on which the electrode terminal group is formed, the height of the protrusion frame is formed on the solid-state imaging device. The method for manufacturing a solid-state imaging device according to claim 2, wherein the step is a step of forming the protruding electrode from a resin with a thickness equal to or less than the height of the protruding electrode.