JPH0619851B2 - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH0619851B2 JPH0619851B2 JP61191376A JP19137686A JPH0619851B2 JP H0619851 B2 JPH0619851 B2 JP H0619851B2 JP 61191376 A JP61191376 A JP 61191376A JP 19137686 A JP19137686 A JP 19137686A JP H0619851 B2 JPH0619851 B2 JP H0619851B2
- Authority
- JP
- Japan
- Prior art keywords
- optical recording
- layer
- liquid crystal
- recording medium
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 47
- 239000005264 High molar mass liquid crystal Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 54
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は消去可能な光記録媒体に関する。The present invention relates to an erasable optical recording medium.
消去可能な光記録媒体としては、ファラデー効果、カー
効果等の磁気光学効果を用いる磁気光学材料、特に希土
類のテルビウムを含む合金を用いた薄膜を基板上に形成
した光記録媒体やカルコゲナル化合物のごとき材料の結
晶−アモルファス相変化により光反射率変化を生ずる材
料を用いた光記録媒体が知られている。As an erasable optical recording medium, a magneto-optical material that uses a magneto-optical effect such as Faraday effect or Kerr effect, particularly an optical recording medium in which a thin film using an alloy containing a rare earth terbium is formed on a substrate or a chalcogenal compound is used. An optical recording medium using a material that causes a change in light reflectance due to a crystal-amorphous phase change of the material is known.
また、その他、高分子液晶の液晶基が配向することによ
る光学的異方性を利用した光記録媒体が提案されてい
る。In addition, an optical recording medium that utilizes optical anisotropy due to alignment of liquid crystal groups of polymer liquid crystals has been proposed.
〔発明が解決しようとする問題点〕 従来の光磁気記録媒体や相変化媒体は、有害材料を用い
ている点、スパッタ等の製造によること、媒体の安定性
が低いために特別な保護層が必要である等の欠点があ
る。従って、簡便な製法でかつ無害でありかつコストが
安い光記録媒体が強く望まれている。以上のような欠点
を解決する媒体として高分子液晶を一対の電極基板間に
封入したものが提案されているが(特開昭59-10930号,
特開昭59-35989号,特開昭60-114823号)、これはS/N比
が50dB程度であり未だ不充分である。[Problems to be Solved by the Invention] Conventional magneto-optical recording media and phase change media have a special protective layer because they use harmful materials, are manufactured by sputtering, etc., and have low stability. There are drawbacks such as being necessary. Therefore, there is a strong demand for an optical recording medium that is simple in manufacturing method, harmless, and inexpensive. A medium in which a polymer liquid crystal is enclosed between a pair of electrode substrates has been proposed as a medium for solving the above drawbacks (Japanese Patent Laid-Open No. 59-10930,
JP-A-59-35989 and JP-A-60-114823), which have an S / N ratio of about 50 dB, which is still insufficient.
本発明の目的はさらにS/N比を改善した光記録媒体を提
供することにある。It is another object of the present invention to provide an optical recording medium having an improved S / N ratio.
本発明による光記録媒体は、透明基板上に透明電極層、
誘電体層、高分子液晶層からなる光記録層と、誘電体層
と、光吸収層と、対向電極層とを順次積層してなる光記
録媒体において、前記光記録層に用いた高分子液晶の常
光線及び異常光線に対するそれぞれの屈折率n11,n1を (但し、n,mは奇数)、前記光記録層の膜厚dを (但し、λは半導体レーザの波長)としたこことを特徴
とする。The optical recording medium according to the present invention has a transparent electrode layer on a transparent substrate,
In an optical recording medium in which an optical recording layer including a dielectric layer and a polymer liquid crystal layer, a dielectric layer, a light absorbing layer, and a counter electrode layer are sequentially laminated, a polymer liquid crystal used for the optical recording layer The respective refractive indices n 11 and n 1 for ordinary and extraordinary rays of (However, n and m are odd numbers), the film thickness d of the optical recording layer is (Where λ is the wavelength of the semiconductor laser).
一様に配向させ、複屈折をもつ高分子液晶層からなる光
記録層に入射した光は複屈折により常光線と異常光線に
分かれる。スネルの方法に従うものが常光線であり、従
わないものが異常光線である。Light incident on an optical recording layer made of a polymer liquid crystal layer having uniform birefringence and birefringence is divided into ordinary rays and extraordinary rays by birefringence. Those that follow Snell's method are ordinary rays, and those that do not follow are extraordinary rays.
本発明の光記録媒体1について第1図を用いて説明す
る。The optical recording medium 1 of the present invention will be described with reference to FIG.
透明基板2としては、ガラス基板、ポリカーボネイト基
板など従来の光ディスクに用いられている基板が使用可
能である。As the transparent substrate 2, it is possible to use a substrate used for a conventional optical disc such as a glass substrate or a polycarbonate substrate.
前記基板2上にITOを蒸着し、これを透明電極層3とす
る光記録層5には、室温において記録状態の保持が可能
であり、相転移により、屈折率の異なる二値状態をとる
ことが必要である。The optical recording layer 5 in which ITO is vapor-deposited on the substrate 2 and used as the transparent electrode layer 3 is capable of holding a recording state at room temperature, and has a binary state with different refractive indexes due to a phase transition. is necessary.
前記要件を満たす材料としては、グラス転移温度が室温
より高いポリマーたとえば重合度100程度のポリスチレ
ン、ポリエチレン等と液晶との混合物が使用できる。混
合比は液晶が液晶性を失わず、等方相転移温度が50℃〜
150℃の間にあり、グラス転移温度が室温より高くなる
ように選ぶ必要がある。As a material satisfying the above requirements, a polymer having a glass transition temperature higher than room temperature, for example, a mixture of polystyrene and polyethylene having a degree of polymerization of about 100 with a liquid crystal can be used. The mixing ratio is such that the liquid crystal does not lose its liquid crystallinity and the isotropic phase transition temperature is 50 ℃
It must be chosen to be between 150 ° C and have a glass transition temperature above room temperature.
この他前記要件を満たす材料としては、従来知られてい
る液晶を柔軟なアルキレンなどをスペーサとしてアクリ
レート、メタクリレート、ポリシロキサンに結合するこ
とによって得られるいわゆる側鎖型の高分子液晶層を用
いることができる。In addition, as a material satisfying the above requirements, it is possible to use a so-called side chain type polymer liquid crystal layer obtained by bonding a conventionally known liquid crystal to an acrylate, a methacrylate, or a polysiloxane using a flexible alkylene or the like as a spacer. it can.
透明基板2上に形成した透明電極層3上に前記光記録用
材料を塗布またはスピンコートなどの方法にて薄膜化
し、それを光記録層5とする。第1誘電体層4としては
MgF2等の透明な誘電体が利用できる。光吸収層7として
はレーザ光を効率よく吸収する材料たとえば酸化バナジ
ウムフタロシアニンを蒸着することにより得られる。第
2誘電体層6としてはスパッタ法により形成したSiO2層
等が利用できる。反射電極層としてはITO,NESA,アルミ
等の蒸着により形成し得る。The optical recording material is formed into a thin film on the transparent electrode layer 3 formed on the transparent substrate 2 by a method such as coating or spin coating, which is used as the optical recording layer 5. As the first dielectric layer 4,
Transparent dielectrics such as MgF 2 can be used. The light absorption layer 7 is obtained by depositing a material that efficiently absorbs laser light, for example, vanadium oxide phthalocyanine. As the second dielectric layer 6, a SiO 2 layer or the like formed by a sputtering method can be used. The reflective electrode layer can be formed by vapor deposition of ITO, NESA, aluminum or the like.
従来の光記録媒体を比較のため第2図に示した。本発明
による光記録媒体とは光記録層の厚みを後で述べる方法
で調整せず、誘電体層を設けないことを除いて同一であ
る。同一構成部分には同一の符号を付して説明を省略し
た。A conventional optical recording medium is shown in FIG. 2 for comparison. The optical recording medium according to the present invention is the same as the optical recording medium except that the thickness of the optical recording layer is not adjusted by the method described later and no dielectric layer is provided. The same components are assigned the same reference numerals and explanations thereof are omitted.
本発明の媒体も従来の媒体も、ともに書き込みにおける
作用は同じである。すなわち始めに光記録層全体をグラ
ス転移温度以上に加熱し、これを室温まで冷却し液晶基
が一定方向に配向したホモジニアスな配向状態を作り、
これを消去状態とする。なおホモジニアスな配向は誘電
体のラビング処理により実現され、高分子液晶の高分子
性により室温で保持されている。この媒体1に半導体レ
ーザ光などの高密度エネルギー光のホモジニアス配向方
向に直線偏波したパルスを照射し、光記録層5を等方性
転移温度以上に加熱し、同時に電場を印加することによ
り、点状でありその中では均一にホメオトロピックな配
向を示し、入射レーザに対してn1の屈折率を示す。Both the medium of the present invention and the conventional medium have the same operation in writing. That is, first, the entire optical recording layer is heated to the glass transition temperature or higher, and cooled to room temperature to form a homogeneous alignment state in which liquid crystal groups are aligned in a certain direction.
This is the erased state. Homogeneous orientation is realized by rubbing the dielectric material, and is maintained at room temperature due to the polymer nature of the polymer liquid crystal. By irradiating the medium 1 with a pulse linearly polarized in the homogeneous alignment direction of high-density energy light such as a semiconductor laser light, the optical recording layer 5 is heated to an isotropic transition temperature or higher, and an electric field is applied at the same time, It is dot-shaped and shows a uniform homeotropic orientation in it, and exhibits a refractive index of n 1 with respect to the incident laser.
次に本発明の媒体における反射率特性について述べる。Next, the reflectance characteristics of the medium of the present invention will be described.
記録層5における屈折率は書き込み時にn1、非書き込み
時にn11を示すが、これら屈折率をはじめにnとして反
射率を計算してみる。The refractive index of the recording layer 5 is n 1 at the time of writing and n 11 at the time of non-writing. Let's calculate the reflectance with these refractive indices as n first.
屈折率n0の誘電体層と屈折率nを持つ記録層と屈折率ng
の誘電体層とを用いた場合の反射率は次式で与えられ
る。すなわち (1)式において、n>ng,n0あるいはng,n0>nを満たす場
合は反射増加膜となりδ=(2m+1)πの場合に極大値 を取り。第3図に示すようにAの位置にある、一方δ=
2mπの場合には極小値 を取りBの位置にくる。Dielectric layer with refractive index n 0 , recording layer with refractive index n and refractive index ng
The reflectance when using the dielectric layer is given by the following equation. Ie In equation (1), when n> ng, n 0 or ng, n 0 > n is satisfied, the film becomes a reflection-increasing film, and when δ = (2m + 1) π, the maximum value is obtained. Take. As shown in FIG. 3, it is at the position A, while δ =
Minimum value for 2 mπ Take and come to the position of B.
一方(1)式において、n0>n>ngあるいはng>n>n0とな
る場合には、δ=(2m-1)πの場合に極小値 を取り、Cの位置となる。δ=2mπの場合には極大値と
して を取り、Bの位置にくる。On the other hand, in equation (1), if n 0 >n> ng or ng>n> n 0 , then the minimum value when δ = (2m-1) π To take the position of C. In the case of δ = 2mπ Take and get to position B.
本発明の構造を示す第1図において、第1誘電体層4に
は屈折率n0のもの、第2誘電体層6には屈折率ngのもの
を用いる。光記録層5にはホモジ配向時にn11、ホメオ
配向時にn1の屈折率を持つ液晶基を用いた高分子液晶を
用いる。読み書きに使用する光としてはホモジ配向方向
すなわち液晶基の配向方向に直線偏光したものを用いて
いる。In FIG. 1 showing the structure of the present invention, a first dielectric layer 4 having a refractive index n 0 and a second dielectric layer 6 having a refractive index ng are used. For the optical recording layer 5, a polymer liquid crystal using a liquid crystal group having a refractive index of n 11 in homogenous orientation and n 1 in homeo orientation is used. The light used for reading and writing is linearly polarized light in the homogenized orientation direction, that is, the orientation direction of the liquid crystal group.
屈折率がn11の時、すなわちホモジニアス配向の場合に
はその方向に偏光した光に対して、 であり、n11>ngの時は反射増加膜として与えられる。
δ=(2m+1)πになるようにdを調整し、反射は極大にな
りその値は で与えられる。When the refractive index is n 11 , that is, in the case of homogeneous orientation, for light polarized in that direction, And when n 11 > ng, it is given as a reflection increasing film.
Adjust d so that δ = (2m + 1) π, the reflection becomes maximum and its value is Given in.
光照射し、同時に電場を印加しスポット部の屈折率をn1
とすると となり、n1<ngの時に反射防止膜として与えられ、n1が
δ=(2m′+1)π極小となり、その値は で与えられる。The refractive index of the spot is n 1
And When n 1 <ng, it is given as an antireflection film, and n 1 becomes δ = (2m ′ + 1) π minimum, and its value is Given in.
n1が一方 を満たすときは反射光は0となり反射率化が非常に大き
くなり、この結果記録部に高いコントラストが得られ
る。しかしながら実際は、n1が位相条件であるところの δ=(2m′+1)πすなわち を満たす場合、従来はdの調整により行えたが、本発明
ではdはすでにホモジニアス配向時の反射極大調整に用
いて 従って式(3)は、 (ただしm′<m)のような奇数比で与えられる屈折率
n1,n11を持つ液晶を選ぶことが有効である。n 1 is one When the above condition is satisfied, the reflected light becomes 0 and the reflectance becomes extremely large, and as a result, a high contrast is obtained in the recording portion. However, in practice, δ = (2m ′ + 1) π where n 1 is the phase condition, In the case of satisfying the above condition, conventionally, it could be done by adjusting d, but in the present invention, d has already been used for adjusting the reflection maximum at the time of homogeneous alignment. Therefore, equation (3) is Refractive index given by odd ratio such as (m '<m)
It is effective to select a liquid crystal having n 1 and n 11 .
この観点に立って液晶を選び、液晶厚dを調整すれば従
来のものにくらべて高い書き込みコントラストの記録が
可能となる。上記のような屈折率変化を干渉条件に合せ
てコントラストの向上をめざす方法を他の媒体たとえ相
変化媒体を用いてみると、この場合の屈折率変化が0.01
程度と小さくこの場合膜厚は10μm以上となり、膜厚均
一性及び膜厚10μmにわたって均一に1μmφの記録点
を作るのは難しく、この方法は使用できない。From this point of view, if the liquid crystal is selected and the liquid crystal thickness d is adjusted, it is possible to record with a higher writing contrast than the conventional one. When a method aiming to improve the contrast by matching the change in the refractive index with the interference condition as described above using another medium, for example, a phase change medium, the change in the refractive index in this case is 0.01
In this case, the film thickness becomes 10 μm or more, and it is difficult to make the film thickness uniformity and the recording points of 1 μmφ uniformly over the film thickness 10 μm, and this method cannot be used.
〔実施例〕 以下に本発明の一実施例を図によって説明する。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings.
第1図は本発明の一実施例を示す光記録媒体1の構成を
示す図である。FIG. 1 is a diagram showing the configuration of an optical recording medium 1 showing an embodiment of the present invention.
図において、基板2としてガラス板を使用し、まずこの
上にITOを1400Å蒸着して透明電極層3とし、次いで、
第1誘電体層4としてMgF2を蒸着して設け、光記録層5
として第5図に示す構造式を有する高分子液晶を用い
る。この上に第2誘電体層4としてSiO2をスパッタリン
グにて設け、さらに光吸収層7として酸化バナジウムフ
タロシアニンを1000Å設け、さらにこの上に対向電極層
8としてアルミニウムを蒸着し、光記録媒体1とする。In the figure, a glass plate is used as the substrate 2, and ITO is vapor-deposited on the transparent electrode layer 1400Å to form a transparent electrode layer 3, and then,
The optical recording layer 5 is formed by depositing MgF 2 as the first dielectric layer 4.
A polymer liquid crystal having the structural formula shown in FIG. SiO 2 is provided as a second dielectric layer 4 by sputtering on this, vanadium oxide phthalocyanine is provided as 1000 Å as a light absorption layer 7, and aluminum is further vapor-deposited as a counter electrode layer 8 on this to form an optical recording medium 1. To do.
光記録層は、第5図に示す構造式を有する高分子液晶を
溶融状態になるまで加熱し、第1誘電体層4の上に滴下
した後、ロールを回転させながらホットプレスを行なう
ことにより形成でき、一軸配向性(側鎖に用いている液
晶基が配向)を有する。The optical recording layer is prepared by heating the polymer liquid crystal having the structural formula shown in FIG. 5 to a molten state, dropping it on the first dielectric layer 4, and then hot pressing it while rotating the roll. It can be formed and has uniaxial orientation (the liquid crystal group used for the side chain is oriented).
光記録層5の厚みは干渉効果を考慮して次のように考え
る。すなわち、まず高分子液晶のn11が1.688であり、n1
が1.508であり、n1とn11の比が0.89336であるので、こ
れにもっとも近い奇数比17/19=0.89473を採用し、 が19πに等しくなるようにdを定めると、d=2.336μ
mとなる。The thickness of the optical recording layer 5 is considered as follows in consideration of the interference effect. That is, first, n 11 of the polymer liquid crystal is 1.688, and n 1
Is 1.508 and the ratio of n 1 and n 11 is 0.89336, so the closest odd ratio 17/19 = 0.89473 is adopted, If d is set so that is equal to 19π, d = 2.336μ
m.
光記録層5を挟む誘電体の屈折率は第1誘電体層4が1.
38であり、第2誘電体層6が1.547であるので、光記録
層5がホモジニアスな配向をしているときの屈折率n11
=1.688、は両方の誘電体層の屈折率よりも大きいので
反射増加膜として働き、先の厚みの場合は極大値を持
ち、反射率R2は で与えられ、約2%を得る。一方、半導体レーザ照射と同
時に、電場を印加した場合にホメオトロピックな配向を
した時に屈折率が となるが、この場合に反射率R2は となり、R2は、0.09%とほぼ無反射条件となり、反射率
変化は22と大きくなっている。The refractive index of the dielectric material sandwiching the optical recording layer 5 is 1.
38 and the second dielectric layer 6 is 1.547, the refractive index n 11 when the optical recording layer 5 has a homogeneous orientation.
= 1.688, which is larger than the refractive index of both dielectric layers, acts as a reflection-increasing film, and has the maximum value in the case of the previous thickness, and the reflectance R 2 is And get about 2%. On the other hand, when an electric field is applied at the same time as the semiconductor laser irradiation, the refractive index is changed when homeotropic alignment is performed. However, in this case the reflectance R 2 is Therefore, R 2 is 0.09%, which is almost a non-reflection condition, and the reflectance change is as large as 22.
以上のように光記録層の厚みと屈折率の調整により大き
な屈折率比が得られた。As described above, a large refractive index ratio was obtained by adjusting the thickness of the optical recording layer and the refractive index.
第4図は本発明の光記録媒体と従来の光記録媒体とのレ
ーザ光の反射率変化を示す図である。本発明によれば従
来のものに比して1.5倍以上の反射率変化の増大が見ら
れた。FIG. 4 is a diagram showing changes in reflectance of laser light between the optical recording medium of the present invention and the conventional optical recording medium. According to the present invention, the change in reflectance was found to be 1.5 times or more that of the conventional one.
以上のように本発明によるときには読み出し信号のS/N
比をさらに改善してその性能の向上を図ることができる
効果を有するものである。As described above, according to the present invention, the S / N of the read signal is
It has an effect that the ratio can be further improved to improve the performance.
第1図は本発明の一実施例の光記録媒体の構成を示す断
面図、第2図は比較に用いた従来の光記録媒体の構成を
示す断面図、第3図は反射率の厚み依存性を示す図、第
4図はレーザ光の反射率変化を示す図、第5図は光記録
層に用いた高分子液晶の構造式を示す図である。 1……光記録媒体、2……基板、3……透明電極層、4
……第1誘電体層、5……光記録層、6……第2誘電体
層、7……光吸収層、8……対向電極層FIG. 1 is a sectional view showing the structure of an optical recording medium according to an embodiment of the present invention, FIG. 2 is a sectional view showing the structure of a conventional optical recording medium used for comparison, and FIG. FIG. 4 is a diagram showing the change in reflectance of laser light, and FIG. 5 is a diagram showing the structural formula of the polymer liquid crystal used in the optical recording layer. 1 ... Optical recording medium, 2 ... Substrate, 3 ... Transparent electrode layer, 4
...... First dielectric layer, 5 ...... Optical recording layer, 6 ...... Second dielectric layer, 7 ...... Light absorbing layer, 8 ...... Counter electrode layer
Claims (1)
子液晶層からなる光記録層と、誘電体層と、光吸収層
と、対向電極層とを順次積層してなる光記録媒体におい
て、前記光記録層に用いた高分子液晶の常光線及び異常
光線に対するそれぞれの屈折率n11,n1を、 (但し、n,mは奇数)、前記光記録層dの膜厚を (但し,λは半導体レーザの波長)としたことを特徴と
する光記録媒体。1. An optical recording comprising a transparent substrate, an optical recording layer comprising a transparent electrode layer, a dielectric layer, and a polymer liquid crystal layer, a dielectric layer, a light absorbing layer, and a counter electrode layer, which are sequentially laminated. In the medium, the respective refractive index n 11 , n 1 for ordinary and extraordinary rays of the polymer liquid crystal used in the optical recording layer, (However, n and m are odd numbers), the film thickness of the optical recording layer d is (Where λ is the wavelength of the semiconductor laser), which is an optical recording medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61191376A JPH0619851B2 (en) | 1986-08-15 | 1986-08-15 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61191376A JPH0619851B2 (en) | 1986-08-15 | 1986-08-15 | Optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6348630A JPS6348630A (en) | 1988-03-01 |
| JPH0619851B2 true JPH0619851B2 (en) | 1994-03-16 |
Family
ID=16273562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61191376A Expired - Lifetime JPH0619851B2 (en) | 1986-08-15 | 1986-08-15 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0619851B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10945882B2 (en) | 2011-09-27 | 2021-03-16 | Edwin Ryan | Small gauge surgical instrument with adjustable support |
-
1986
- 1986-08-15 JP JP61191376A patent/JPH0619851B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10945882B2 (en) | 2011-09-27 | 2021-03-16 | Edwin Ryan | Small gauge surgical instrument with adjustable support |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6348630A (en) | 1988-03-01 |
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