JPH06197282A - Solid-state imaging device - Google Patents

Abstract

(57) [Summary] [PROBLEMS] To provide a solid-state imaging device which has a good smear characteristic even in the high-speed electronic shutter mode, does not deteriorate S / N at high temperature and low transfer rate, and can perform high-speed continuous imaging. [Configuration] P ⁻ provided on the upper side of the N-type silicon substrate 1
A plurality of photodiodes 3, which are photoelectric conversion elements, are provided in the well 2 at predetermined intervals. Vertical transfer portions 4a and 4b are provided in the P ^- wells 2 on both sides of the photodiode 3 in one row. A P ⁺ pixel separation region for separating adjacent vertical transfer units 4a and 4b is provided. An insulating film 6 is provided on the N-type silicon substrate 1, and a gate electrode 7 that covers the vertical transfer portions 4a and 4b is provided on the insulating film 6. Light shielding metals 8 and 9 for covering the gate electrode 7 are provided, and a color filter 10 is arranged above the photodiode 3. Then, the microlens 11 is arranged above the color filter 10.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device used in a video camera or the like.

[0002]

2. Description of the Related Art Conventional solid-state image pickup devices are roughly classified into two types: a MOS (metal oxide semiconductor) type and a CCD (charge coupled device) type. Since the MOS type has a lot of fixed pattern noise,
The CCD type is the mainstream. Since this CCD type solid-state image pickup device can be easily miniaturized, an interline method is often used.

FIG. 14 shows a cross-sectional structure of an interline CCD type solid-state image pickup device. This interline CCD solid-state image pickup device has an N-type silicon substrate 1
The well 102, the P ^{- -} P provided on the upper side of the 01 wells 102, photodiode 103, 103 is a photoelectric conversion section provided at a predetermined distance from each other, ... and,
A vertical transfer portion 104 provided in the P ⁻ well 102 between the adjacent photodiodes 103 and 103 and a P ⁺ pixel isolation region 105 provided so as to separate the vertical transfer portion 104 and the photodiode 103 are provided. Prepare, above N
An insulating film 106 provided on the silicon substrate 101,
A gate electrode 107 that covers the vertical transfer portion 104, and a light-shielding metal 1 having a U-shaped cross section that covers the gate electrode 107.
08, a light shielding metal 109 provided on the light shielding metal 108, the insulating film 106, and the light shielding metal 108, 1.
09, a color filter 111 disposed above the photodiode 103 in the transparent resin 110, and a color filter 1 on the transparent resin 110.
Micro lens 112 arranged so as to correspond to 11
It has and. A vertical transfer pulse φV is input to the gate electrode 107. Further, in order to extract excessive charges generated in the photodiode 103, a vertical overflow drain for applying a positive potential V _OFD is provided on the N-type silicon substrate 101 to prevent blooming.

In the interline CCD solid-state image pickup device, one row of photodiodes 1 for photoelectric conversion is used.
The vertical transfer unit 104 in one column is provided in correspondence with No. 03. Then, when the incident light forms an image on the photodiode 103 through the microlens 112 and the color filter 111, the photodiode 1 changes according to the intensity of the incident light.
An electric charge is induced in 03 and accumulated.

Then, as shown in the schematic diagrams of FIGS. 15 (a) to 15 (c), when the format is compatible with a normal TV signal,
As shown in FIG. 15 (a), the electric charges (indicated by black circles) accumulated in the photodiodes 103 arranged in a grid pattern are provided once every 1/60 seconds and are vertically provided in parallel with the photodiodes 103. Transfer to the transfer unit 104. The charge of the vertical transfer unit 104 is 1 / f _H cycle (f _H : horizontal synchronization frequency)
Then, the data is sequentially transferred to the horizontal transfer unit 122. Actually, TV
Since the signal is of the interlaced scanning system, after the charges of the odd-numbered rows and the charges of the even-numbered rows of the photodiode 103 are combined (after simultaneous reading of two lines), the horizontal transfer unit 122 is set as shown in FIG. Transfer to. And in FIG.
As shown in (c), the charges transferred to the horizontal transfer unit 122 are transferred to the output unit (not shown) in a cycle of 1H (1 / f _H ). At this time, the reading of the electric charge of one pixel is 1/606
It is performed in the f _H cycle. The interline CC
In the D-type solid-state image pickup device, the signal storage period of each pixel is set to 1 field period (1/60 second), but other frame storage is set to 1 frame period (1/30 second). .

The structure of the transfer drive pulse at this time will be described below.

FIG. 16 shows the interline CCD.
7 is an enlarged plan view of the vicinity of the (n, 1) pixel of the solid-state image pickup device, in which a horizontal transfer unit 127 is provided on one end side of the vertical transfer unit 104 corresponding to the photodiodes 103 in one column. Then, the vertical transfer unit 104 and the horizontal transfer unit 12
An electrode 128 to which the transfer gate signal TG ₁ is input is formed between the electrode 128 and the electrode 7. Photodiode 1 above
Four electrodes extending in parallel with the horizontal transfer unit 127 are formed in the region between the rows 03, and the horizontal transfer unit 12 is formed on these four electrodes.
Vertical drive pulses φV ₂ , φV ₁ , φV ₄ , φV _{3 in} order from the 7 side
Is applied. In addition, an electrode to which the horizontal drive pulse H ₁ is input is formed in the horizontal transfer unit 127 on the extension of the vertical transfer unit 104, and the horizontal drive pulse H is provided to the right of this electrode.
_It forms another electrode to which ₁ is input. Further, two electrodes to which the horizontal drive pulse H ₂ is sequentially input are formed on the right side of the electrodes. That is, the two electrodes to which the horizontal drive pulse H ₁ is input and the horizontal drive pulse H ₂
And two electrodes to which is input are alternately arranged on the horizontal transfer unit 127. Then, the vertical drive pulses φV ₂ , φ
The charges of the vertical transfer unit 104 are vertically transferred to the horizontal transfer unit 127 by V ₁ , φV ₄ , and φV _{3, and} the charges transferred to the horizontal transfer unit 127 are horizontally transferred by the horizontal drive pulses H ₁ and H ₂ . It is output to an output unit (not shown).

[0008]

In the interline CCD solid-state image pickup device, the signal charge of the photodiode 103 becomes small and the smear charge ratio becomes large in the high-speed electronic shutter mode.
Smear increases. Further, the dark current of the photodiode 103 increases at a high temperature, and the charge accumulation time of the vertical transfer unit 104 becomes long at a low transfer rate to increase the dark current, resulting in S / N (signal to noise). Ratio) deteriorates.
Further, there is a problem that only one image can be stored in the vertical transfer unit 104, and high-speed continuous image pickup cannot be performed. Furthermore, in the case of the interlaced scanning method with frame accumulation, since the information on the charges of the odd-numbered rows and the even-numbered rows of the photodiodes 103 is added, there is a problem that the resolution deteriorates when an object moving at high speed is imaged.

Therefore, an object of the present invention is to provide a solid-state image pickup device which has a good smear characteristic even in the high-speed electronic shutter mode, does not deteriorate the S / N at a high temperature and a low transfer rate, and can perform high-speed continuous image pickup. is there.

[0010]

In order to achieve the above object, a solid-state image pickup device according to a first aspect of the present invention is characterized by having a plurality of columns of vertical transfer sections corresponding to one column of photoelectric conversion elements.

A solid-state image pickup device according to a second aspect is the solid-state image pickup device according to the first aspect, further comprising means for calculating charge information of the first vertical transfer section and charge information of the second vertical transfer section. It is characterized by having.

A solid-state image pickup device according to a third aspect is the solid-state image pickup device according to the first aspect, wherein the output of the vertical transfer portion provided in the optical black portion is multi-output.
It is characterized in that only one system of the output is selected and transferred to the horizontal transfer unit.

A solid-state image pickup device according to a fourth aspect is the solid-state image pickup device according to any one of the first to third aspects, wherein the solid-state image pickup device is an integer multiple of the number of pixels in the horizontal direction and the number of dummy bits. A solid-state imaging device comprising a horizontal transfer section having a charge transfer region.

A solid-state image pickup device according to a fifth aspect is the solid-state image pickup device according to any one of the first to fourth aspects, in which the charges of the photoelectric conversion elements in one column are transferred to the vertical transfer units in the plurality of columns. It is characterized in that a transfer control unit for transferring at different timings is provided.

According to a sixth aspect of the present invention, in the solid-state image pickup device according to the fifth aspect, the charges of the vertical transfer sections of the plurality of columns corresponding to the photoelectric conversion elements of the one column are transferred to the horizontal transfer section. It is characterized by having a multiplexer for transferring.

A solid-state image pickup device according to a seventh aspect is the solid-state image pickup device according to the sixth aspect, wherein the multiplexer transfers the charges of at least one column of vertical transfer units among the plurality of columns of vertical transfer units. And means for inhibiting the transfer of charges from other vertical transfer units, and receiving the transferred charges,
It is characterized by comprising a shift register for transferring this charge to the horizontal transfer section.

The solid-state image pickup device according to claim 8 is the solid-state image pickup device according to claim 7, wherein the charges in the vertical transfer portions of the plurality of columns are transferred by a drive pulse having a predetermined number of phases,
The electric charge of the shift register is transferred by driving pulses having the same number of phases as the vertical transfer units of the plurality of columns.

[0018]

According to the solid-state image pickup device of the above-mentioned claim 1, the vertical transfer section of a plurality of columns corresponding to the photoelectric conversion elements of one column is
The charges of the photoelectric conversion elements in the column are read. Then, the read charges are transferred to the vertical transfer units of the plurality of columns. In this way, for example, when the vertical transfer sections of two columns are provided corresponding to the photoelectric conversion elements of one row, the signal charges and noise charges of the photoelectric conversion elements are read into one vertical transfer section, and the other vertical transfer section is read. The noise charge of the photoelectric conversion element is read. Then, the charges of the two columns of vertical transfer portions are simultaneously vertically transferred and output. In this way, the sum of the signal charge and the noise charge and the noise charge are separated and output. Since both noise charges are substantially the same, for example, by removing the noise charges from the sum of the charges, smear charges and charges due to dark current can be removed, and only signal charges can be obtained.

Therefore, even when the signal charge in the high-speed electronic shutter mode or the like is small, it is possible to realize a solid-state image pickup device having a good smear characteristic and reducing noise due to dark current. Further, even if the charge storage time in the vertical transfer unit becomes long at the low transfer rate and the noise charge due to the dark current becomes large, the noise charge can be removed, so that the S / N deterioration can be prevented. Further, it becomes possible to correct the dark current of the photoelectric conversion element at the time of high temperature operation, the influence of electric charges due to this dark current can be reduced, and the S / N can be improved.

According to the solid-state image pickup device of the second aspect,
In the solid-state imaging device according to claim 1, the charge of the photoelectric conversion element is read into the first vertical transfer unit, and the charge of the photoelectric conversion element in the same column read by the first vertical transfer unit is read into the second vertical transfer unit. Then, the charge information of the first vertical transfer section and the charge information of the second vertical transfer section are calculated. Therefore, when the charge of the sum of the signal charge and the noise charge is read into the first vertical transfer unit and the charge of the noise is read into the second vertical transfer unit, the charge of the sum of the signal charge and the noise charge is changed to the noise charge. Can be subtracted to remove the noise charge.

According to the solid-state image pickup device of claim 3,
In the solid-state imaging device according to claim 1 or 2, only one system of the multi-output of the vertical transfer unit provided in the optical black unit is selected and transferred to the horizontal transfer unit.

By doing so, it is possible to obtain dark output from the optical black portion, which is less affected by the oblique spot light.

According to the solid-state image pickup device of claim 4,
In the solid-state imaging device according to any one of claims 1 to 3, the charges of the photoelectric conversion elements are read into a plurality of columns of vertical transfer units corresponding to the one column of photoelectric conversion elements. Then, the horizontal transfer unit having the charge transfer region that is an integer multiple of the number of pixels in the horizontal direction and the number of dummy bits is separated from the charges output by the vertical transfer from the vertical transfer units of the plurality of columns at the same time. Capture in the state. The charges separated and taken into the horizontal transfer unit are horizontally transferred and output at the same time.

Therefore, since the charges from the vertical transfer units of the plurality of columns can be simultaneously output while being separated by the horizontal transfer unit, the transfer rate can be increased and high-speed imaging can be performed.

Further, since the charge of the sum of the signal charge and the noise charge and the noise charge can be simultaneously output while being separated, it is easy to remove the noise charge.

When the solid-state image pickup device has a color RGB primary color stripe filter or the like, charges of pixels corresponding to each RGB are simultaneously transferred to the horizontal transfer section, and these charges are separated into charges corresponding to each RGB. Can be output.

According to the solid-state image pickup device of claim 5,
In the solid-state imaging device according to any one of claims 1 to 4, the transfer control unit is different from the vertical transfer units in a plurality of columns corresponding to the photoelectric conversion elements in the one column in the electric charges of the photoelectric conversion elements in the one column. Transfer at timing. For example, in the case of having two columns of vertical transfer portions corresponding to one row of photoelectric conversion elements, one of the vertical transfer portions is charged as the sum of the signal charge and noise charge of the photoelectric conversion element when charges are generated by incident light. , And the noise charge of the photoelectric conversion element when the charge due to the incident light is not generated can be transferred to the other vertical transfer unit.

Therefore, since the noise charge can be removed, it is possible to realize a solid-state image pickup device having good smear characteristics and reduced dark current noise.

Further, since a plurality of images can be transferred to the vertical transfer units of the plurality of columns at different timings, continuous image pickup can be supported.

According to the solid-state image pickup device of claim 6,
In the solid-state image pickup device according to claim 5, the multiplexer transfers the charges of one vertical transfer unit selected from a plurality of vertical transfer units corresponding to one photoelectric conversion element to the horizontal transfer unit. Therefore, the charges of the plurality of images transferred to the vertical transfer units in the plurality of columns can be stored.

Therefore, a plurality of high-speed electronic shutter images can be obtained, and high-speed continuous image pickup can be supported.

According to the solid-state image pickup device of claim 7,
7. The solid-state imaging device according to claim 6, wherein charges are transferred from at least one column of vertical transfer sections among the plurality of columns of vertical transfer sections, transfer of charges from other vertical transfer sections is prohibited, and the transferred charges are transferred. Is received by the shift register and transferred from the shift register to the horizontal transfer unit.

Therefore, the charges of the image of the selected one vertical transfer portion of the plurality of images transferred to the vertical transfer portions of the plurality of columns corresponding to the above-mentioned one row of photoelectric conversion elements are transferred to the horizontal transfer portion. Output from the horizontal transfer unit. Therefore, you can take out the high-speed shutter image separately and output it,
High-speed continuous imaging is possible.

According to the solid-state image pickup device of claim 8,
8. The solid-state imaging device according to claim 7, wherein the charges of the vertical transfer units of the plurality of columns are transferred by a drive pulse having a predetermined number of phases, and the charges of the shift register are driven by a drive pulse of the same number of phases as the vertical transfer units of the plurality of columns. Forward.

Therefore, the control circuits for the drive pulses of the vertical transfer sections of the plurality of columns and the shift register can be made substantially common,
Can be simplified.

[0036]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The solid-state image pickup device of the present invention will be described in detail below with reference to embodiments.

(First Embodiment) FIG. 1 is a sectional view of a solid-state image pickup device according to the first embodiment of the present invention. In this structure, the P ^- well 2 is provided on the N-type silicon substrate 1,
Photodiode 3 which is a photoelectric conversion unit, and vertical transfer unit 4
a (hereinafter referred to as A register), the vertical transfer portion 4b (hereinafter referred to as B register), a P ⁺ pixel separation region 5 for separating each pixel, an insulating film 6, a gate electrode 7, and light-shielding metals 8 and 9.
The color filter 10 and the microlens 11 are mainly included, and in order to prevent blooming, a positive potential V _{OFD is applied} to the substrate in order to extract an excessive electric charge generated in the photodiode 3.
A vertical overflow drain for applying a voltage is provided. In the present invention, one row of photodiodes 3, ... Is used as photoelectric conversion elements, and A registers and B are used as vertical transfer units to transfer the charges generated in the photodiodes.
The register has two charge transfer units.
Further, there are two systems of the vertical transfer pulse of the vertical transfer section (which also serves as the transfer pulse in this embodiment) φ _VA and φ _VB , which are respectively applied to the gate electrodes of the A register and the B register. The vertical transfer pulse preferably has 2 to 4 phases. In the above structure, the color filter is generally used when it is desired to obtain a color image, and thus may be omitted when a monochrome image is desired.

First, the operation state of the frame accumulation and interlaced scanning method (two-line simultaneous reading) will be described.

Once in one frame (two fields), the charges induced and accumulated according to the intensity of light incident on the photoelectric conversion unit are read into the vertical transfer unit. The odd rows are simultaneously transferred to the A register and the even rows are transferred to the B register, and the information of the A register is read in the odd field and the information of the B register is read in the even field. As a result, even if an image of an object that moves at high speed is captured, a high-resolution image without blurring can be obtained.

Next, an embodiment of the present invention in the high-speed electronic shutter mode in the case of field accumulation in the solid-state image pickup device having the above structure will be described. Normally, the shutter time in electronic shutter mode is 1/1500
It is about 0 second, and the charge reading pulse width is about 2 μsec.

During the vertical blanking period, the charge generated by the photodiode is read into the A register, and when the read is completed, the charge generated by the photodiode is read into the B register and the A register and the B register are synchronized with each other. Vertical transfer is performed and then sequentially transferred to the horizontal transfer unit. The charges transferred from each register (A register and B register) to the horizontal transfer unit are composed of the charges read into each register, the smear charge, and the vertical transfer unit dark current. Therefore, when subtraction is performed between the same row of the A register and the B register, it is possible to obtain information of each pixel in which smear is canceled. As a result, in the high-speed electronic shutter mode, a good image with almost no smear is obtained, and smear is about 40 dB.
Be improved. In this embodiment, the field accumulation,
In the case of simultaneous two-line reading, simultaneous reading of all pixels in the high-speed electronic shutter mode and non-interlaced scanning can be supported.

Since the information of the optical black portion of the B register in the high-speed electronic shutter mode is only the dark current with almost no smear, it is subtracted between the same row of the A register and the B register of the optical black portion. As a result, the dark current of the effective pixel can be canceled. As a result, it is particularly effective in high temperature operation where dark current is a problem.

An embodiment of the present invention in which the oblique spot light is incident on the optical black portion in the solid-state image pickup device having the above structure will be described below.

A dummy A register and a B register are arranged in the optical black portion, and the magnitudes of the charges are compared,
By reading the charges in the register on the side determined to have a small charge amount from the horizontal transfer unit from the odd-numbered field, it is possible to obtain an image less affected by the oblique spot light at a cycle of 1/20 second. 1/20 second is the time of 3 fields until the read signal of the 3rd field is completed because 1 field of a normal TV signal is 1/60 second.

(Second Embodiment) FIG. 2 is a plan view of a solid-state image pickup device according to a second embodiment of the present invention, in which the vertical transfer section has two systems and the horizontal transfer section has a one-wire system. Reference numeral 21 is a plurality of photodiodes as photoelectric conversion elements arranged in a grid pattern, and 22 is one of the plurality of photodiodes 21.
A vertical transfer unit (hereinafter,
A register), 23 is the photodiode 21
A vertical transfer section (hereinafter referred to as B register) provided line-symmetrically to the A register with respect to one column, and 24 is a horizontal transfer section connected to one end side of the A register and the B register. Dummy bits 26, which are charge transfer regions, are provided at both ends of the horizontal transfer section 24. The horizontal transfer section 24 has a charge transfer area that is twice the total number of pixels in the horizontal direction and the number of dummy bits. An optical black section 25, which is parallel to the A register and the B register and has one end connected to the horizontal transfer section 24 on both sides of the area of the A register, the B register and the photodiode 21,
Is provided. In addition, the plurality of photodiodes 21
Is an array from (1,1) to (512,492), that is, 5
It has 12 columns and 492 rows.

In the solid-state image pickup device having the above structure, in the case of the interlaced scanning system in which the signal storage period is one field period (1/60 seconds) and the frame storage is performed, the charges of the odd rows of the photodiode 21 are read into the A register, and the photo register 21 is read. The charges of even rows of the diode 21 are read into the B register. Then, in the odd field of the TV signal, only the charges of the A register are vertically transferred to the horizontal transfer unit 24. The horizontal transfer unit 24 completes the transfer to the output unit (not shown) in a 1H cycle. Normally, one pixel of the horizontal transfer unit 24 is read out at a period of 1 / 606f _H (f _H is a horizontal synchronizing frequency). In this case, the horizontal transfer unit 24 charges twice the number of pixels in the horizontal direction. 1/12 because it has a transfer area
One pixel is read every 12f _H cycle. On the other hand, in the even field of the TV signal, only the charge of the B register is vertically transferred to the horizontal transfer unit 24. Thereafter, similarly to the case of the odd field, the transfer to the output unit is completed in the 1H cycle. As described above, in the solid-state imaging device in which the vertical transfer unit has two systems and the horizontal transfer unit has one line, the charges of the A register and the B register are output via one horizontal transfer unit 24. Therefore, since the charge information of the odd-numbered rows and the charge information of the even-numbered rows of the photodiodes 21 are not added, a high-resolution image without blur can be obtained even when an object moving at a high speed is imaged.

In the solid-state image pickup device having the above structure,
A method of canceling noise charge using the A register and the B register when the pixel signal is stored in the field storage in the high speed electronic shutter mode will be described below.

FIG. 3 shows the timing of reading the charges of the photodiode 21 into the A register and the B register. First, the electric charge accumulated in the photodiode 21 is drawn out to the overflow drain every 1H period. For example, the 1H period when the electronic shutter is about 1/15000 seconds is 1H = 1 / fH = 1 / 15.734 KHz. Charges are read from the photodiode 21 into the A register and the B register once every 1/60 seconds. Since the A register is read immediately before the charge is drawn to the overflow drain, E _I × 1/15000
(E _I : signal charge of one photodiode 21 accumulated in one second) is read. Then, the charge is extracted by the overflow drain, and after about 2 μs, the charge is read from the photodiode 21 to the B register. This B
The signal charge read into the register has an accumulation period of about 2μ.
Since it is s, E _I × 1/500000. In addition, smear charge and A register, B register
The charge due to the dark current of the register is added to each signal charge. The smear charge and the charge due to the dark current of the A register and the B register are shown by a one-dot chain line Es. Although the smear charge and the charge due to the dark current of the A register and the B register are shown by a straight line for simplification, it depends on the light amount received by the A register and the B register which are vertical transfer units during the transfer. It increases sharply at the spot light of the register and B register. However, the smear charge and the charge due to the dark current of the A register and the B register depend on time,
Since the A register and the B register are arranged in line symmetry with respect to the photodiodes 21 in one row, if the charges of the A register and the B register are simultaneously transferred to different positions of the horizontal transfer section, signal charges and noise will be generated. It is possible to separate and output the sum of charges and noise charges. That is, after the charges are transferred from the photodiode 21 to the A register and the B register, the A register and the B register are synchronously vertically transferred and transferred to the horizontal transfer unit 24. The charges transferred to the horizontal transfer section 24 are output from the horizontal transfer section 24 in the order of the dummy bit, the optical black section, A ₁ , B ₁ , A ₂ , B ₂ , .... Note that the A _1, A _2, ... is the signal charge and the noise charges are vertically transferred from the A register, B _1, B _2, ... is a vertical transfer noise charges from each B register. Since these two noise charges are substantially equal to each other, the noise charges can be canceled by separating and outputting the noise charges from the horizontal transfer unit and then subtracting the noise charges from the sum of the signal charges and the noise charges. In the B register,
In addition to the noise charge, a signal charge of about E _I / 500000 is included, but canceling this signal charge has almost no effect on the absolute value of the original signal charge.

As described above, since noise charges can be removed by using the A register and the B register, a solid-state image pickup device having a good smear characteristic and a dark noise and a good S / N is realized. be able to.

In addition to the above-described method of canceling noise charge, when canceling noise charge by using an optical black portion or a dummy portion, it is possible to correct the dark current of the photodiode 21 and to operate at high temperature. Even if the dark noise increases, the dark noise can be removed, so that a solid-state imaging device having a good S / N can be realized.

In addition, even if the charge accumulation time of the A register and the B register becomes long and the charge due to the dark current of the A register and the B register increases in the image pickup at the low transfer rate, the dark current increases as described above. It is possible to cancel the noise electric charge including the electric charge. Therefore, even in imaging at a low transfer rate, it is possible to prevent deterioration of S / N.

(Third Embodiment) FIG. 4 is a plan view of a solid-state image pickup device according to a third embodiment of the present invention, showing a configuration in which the vertical transfer section has two systems and the horizontal transfer section has two lines.

In this solid-state image pickup device, another horizontal transfer portion is provided in the structure of the solid-state image pickup device of the second embodiment, and the same components are designated by the same reference numerals. A horizontal transfer unit 27 is provided in parallel to the horizontal transfer unit 24 and on the opposite side of the horizontal transfer unit 24 from the vertical transfer units 22 and 23. Dummy bits 28 are provided at both ends of the horizontal transfer unit 27.
Is provided.

In the above solid-state image pickup device, when the signal accumulation of pixels is frame accumulation and the TV signal is of the interlaced scanning system, first, the charges in the odd rows of the photodiodes 21 are read into the A register and the even rows of the photodiodes 21 are read. Read the charge into the B register. Then, in the odd field of the TV signal, only the information of the A register is transferred to the horizontal transfer section 24, and the horizontal transfer sections 24 and 27 complete the transfer to the output section (not shown) in one frame cycle. One pixel is read by the horizontal transfer units 24 and 27 by 1/60
The transfer clock is set to 606f _H level in 6f _H cycle. On the other hand, in the even field of the TV signal, only the information in the B register is transferred to the horizontal transfer section 27, and thereafter, the transfer is completed to the output section in one frame cycle as in the case of the odd field. As described above, in the solid-state imaging device in which the vertical transfer unit has two systems and the horizontal transfer unit has two lines, the charge of the A register is output through the horizontal transfer unit 24, and the charge of the B register is output through the horizontal transfer unit 27. Output through.

When the signal storage of the pixel is the field storage and the high speed electronic shutter mode, the charges are transferred from the photodiode 21 to the A register and the B register, and then the A register and the B register are synchronously vertically transferred. ,
The charges from the A register are transferred to the horizontal transfer unit 24, while the charges from the B register are transferred to the horizontal transfer unit 27. Then, the charges transferred to the horizontal transfer unit 24 are horizontally transferred and output in the order of the dummy bit, the optical black part, A ₁ , A ₂ ,. On the other hand, the charges transferred to the horizontal transfer unit 27 are the dummy bits, the optical black unit, and the B
Horizontally transferred in the order of ₁ , B ₂ , ... And output. The horizontal transfer unit 24 and the horizontal transfer unit 7 output in synchronization. Further, A ₁ , A ₂ , ... Are the charges vertically transferred from each A register, and B ₁ , B ₂ , ... Are the charges vertically transferred from each B register.

A method of transferring charges from the A register and the B register to the horizontal transfer units 24 and 27 and a method of horizontally transferring the charges of the A register and the charges of the B register will be described below.

FIG. 5 shows the photodiode 21 in the n-th column.
Corresponding to the A _n register, the B _n register and the horizontal transfer unit 24,
27 is a plan view of an essential part of 27, in which a transfer gate signal TG ₁ is input in an area between the A _n register, the B _n register and the horizontal transfer section 24 and extending in parallel with the horizontal transfer section 24. An electrode 31 is provided. Further, an electrode 32 to which the transfer gate signal TG ₂ is input is provided on the area between the horizontal transfer section 24 and the horizontal transfer section 27.
Then, the horizontal transfer unit 24 on the extension line of the A _n register,
The electrode 33 is formed on the areas A _x and A _x of 27, and the electrode 34 is formed on the areas B _x and B _x of the horizontal transfer portions 24 and 27 on the extension line of the B _n register. On the other hand, the horizontal transfer units 24 and 2
7 areas A _x, A _x and the area B _x, region A _y between the B _x, to form an electrode 35 implanted boron on A _y. Forming a region B _y, electrodes 36 are implanted with boron on B _y between the region _{A x + 1, A x +} 1 and the area B _x, B _x in the horizontal transfer unit 24, 27. Then, enter the horizontal drive pulse H ₁ to the electrode 33 and the electrode 35, and enter the horizontal drive pulse H ₂ in the electrode 34 and the electrode 36, the area A _x, A _x and area A _y, A _y
, And the regions B _x , B _x and the regions B _y , B _y have potential gradients for two-phase driving. In addition, the horizontal transfer section 24 below the electrode 32 for the transfer gate signal TG ₂ ,
A channel stopper 30 shown in FIG. 6A is formed between the regions A _x and A _{x of} 27 to separate the regions A _x and A _x . On the other hand, the electrode 3 of the transfer gate signal TG ₂
A channel stopper is not formed between the regions B _x and B _x of the horizontal transfer portions 24 and 27 below 2 as shown in FIG. 6B.
It connects the region B _x area B _x and the horizontal transfer unit 27 of the horizontal transfer unit 24.

Then, as shown in FIGS. 5 and 7, when the transfer gate signal TG ₁ is set to the H level for a predetermined period T ₁ , the charges of the A _n register and the B _n register are stored in the area of the horizontal transfer section 24. Transfer to A _x and B _x respectively. Next, when the transfer gate signal TG ₁ becomes L level, the transfer gate signal TG ₂ becomes H level, and the horizontal drive pulses H ₁ and H ₂ are set to L level after a predetermined period.
Then, when the horizontal drive pulses H ₁ and H ₂ become L level, the charges in the region B _x of the horizontal transfer unit 24 are transferred to the horizontal transfer unit 27.
Transfer to. At this time, the charges in the region A _x are not transferred to the horizontal transfer section 27 because of the channel stopper 30 below the electrode 32 of the transfer gate signal TG ₂ . Next, after the horizontal drive pulses H ₁ and H ₂ are at the L level for the period T ₂ , the horizontal drive pulse H ₁ is at the H level. When this horizontal drive pulse H ₁ becomes H level during the period T ₃ ,
The charges below the electrode 32 of the transfer gate signal TG _{2 in} the area B _x are horizontally transferred to the position of the area A _{x in} the horizontal transfer unit 27. In the middle of this period T ₃ , the transfer gate signal TG ₂
Is set to the L level to separate the horizontal transfer unit 24 and the horizontal transfer unit 27. Then, after the period T ₃ , the clocks of the horizontal drive pulses H ₁ and H ₂ are started, and charges from the A _n register in the area A _x of the horizontal transfer section 24 and B _{n in} the area A _x of the horizontal transfer section 27 are started. The charge from the register is
Horizontal transfer is performed to the position of the area A _x-1 in one clock cycle.
This horizontal transfer is repeated for the period T ₄ , and all the charges in the horizontal transfer units 24 and 27 are output.

In this way, the charges can be separated from the A _n register and the B _n register by the horizontal transfer units 24 and 27 and output at the same time, so that the transfer rate can be increased and high-speed imaging can be supported.

(Fourth Embodiment) FIG. 8 shows a plan view of a solid-state image pickup device according to a fourth embodiment of the present invention. Reference numeral 51 denotes a plurality of photodiodes as photoelectric conversion elements arranged in a grid pattern. , 52 is one of the plurality of photodiodes 51
Four vertical transfer units provided in parallel in each column, 53 are four vertical transfer units provided in line symmetry with the vertical transfer unit 52 with respect to one column of the plurality of photodiodes 51, and 54 is the vertical transfer unit. The horizontal transfer unit is connected to one ends of the unit 52 and the vertical transfer unit 53 via a dummy vertical register 60 which is a shift register. The plurality of photodiodes 5
1. On both sides of the vertical transfer section 52 and the vertical transfer section 53, optical black sections 55 are provided in parallel with the vertical transfer section 52 and the vertical transfer section 53, one end of which is connected to the horizontal transfer section 54. Further, dummy bits 56 are provided at both ends of the horizontal transfer section 54. Although the plurality of photodiodes 51 have a configuration of 492 rows,
In FIG. 8, two photodiodes 5 in the nth row and the n + 1th row are provided.
1 and only the vertical transfer units 52 and 53 corresponding to the photodiodes 51 in the two columns are shown. Vertical transfer unit 5
2 is A ₁ row, A ₂ row, A ₃ from the photodiode 51 side in order.
The vertical transfer unit 53 is composed of vertical registers of columns A and A ₄ , and the vertical transfer unit 53 is arranged in order from the photodiode 51 side to the columns B ₁ , B ₂ , B ₃ , and B _4.
It consists of vertical registers in columns. Further, the horizontal transfer section 54 has a charge transfer area having a bit number twice the total number of pixels in the horizontal direction and the number of dummy bits.

The vertical transfer of the vertical transfer units 52 and 53 is driven by four phases. This is because in the interlaced scanning method, charges of two pixels on an odd row and an even row are added. That is, in the odd field of the TV signal, addition such as (n, 1) + (n, 2), (n, 3) + (n, 4), ...
In the even field of the TV signal, (n, 1), (n, 2) + (n, 3),
Since it is added as (n, 4) + (n, 5), ..., 4-phase drive is used.

FIG. 9 is an enlarged plan view of the vicinity of the pixel (n, 1) of this solid-state image pickup device, which is formed on the vertical transfer portion 52 along the lines A _{1 to} A ₄ of the vertical transfer portion 52. The electrodes are
Vertical drive pulse 1AφV ₃ , 2AφV ₃ , 3AφV ₃ , 4Aφ
V ₃ is input to each of the electrodes, and the vertical drive pulses 1BφV ₃ , 2BφV ₃ , 3BφV ₃ , 4BφV ₃ are applied to the electrodes formed on the vertical transfer portion 53 along the columns B _{1 to} B ₄ of the vertical transfer portion 53.
Are input respectively. Then, A of the vertical transfer unit 52
_The signal V _G2A is applied to the electrodes formed in the region between the _first row and the _second row.
And the signal V _G3A is input to the electrodes formed in the region between the A ₂ and A ₃ columns of the vertical transfer unit 52, and the vertical transfer unit 5
The signal V _G4A is input to the electrode formed in the region between the A ₃ column and the A ₄ column. On the other hand, B _{1 of the} vertical transfer unit 53
Enter the signal V _G2B to electrodes formed in a region between the column and the B ₂ rows, the signal V _G3B the electrode formed in a region between the _two rows and B ₃ rows B of the vertical transfer portion 53 Input and vertical transfer unit 53
The signal V is applied to the electrodes formed in the area between the B ₃ and B ₄ columns of
_You are entering _G4B . Then, the photodiode 5
Four electrodes extending in parallel with the horizontal transfer portion 54 are formed in the region between one row. Vertical drive pulses φV ₂ , φV ₁ , φV ₄ , φV are sequentially applied to the four electrodes from the horizontal transfer unit 54 side.
_You have entered ₃ .

The dummy vertical registers 60 are arranged in columns A _{1 to} A ₄ of each vertical transfer section 52 (or vertical transfer section 53).
Composed of the four first register 61 connected to the lowermost end, the second register 62 of one which is connected to the four first register 61 of the horizontal transfer section 54 side of the B ₁ row .about.B ₄ columns) Has been done. Also between the first register 61 lowermost and the four A ₁ row to A ₄ rows of the vertical transfer unit 52 (or the B ₁ row .about.B ₄ columns of the vertical transfer portion 53), and the horizontal transfer unit 54 Four electrodes extending in parallel are formed, and vertical drive pulses φV ₂ , φV ₁ , φV ₄ , are sequentially formed on the four electrodes from the horizontal transfer portion 54 side.
Input φV ₃ . Further, four electrodes extending parallel to the horizontal transfer section 54 are formed between the first register 61 and the second register 62, and the vertical drive pulse φV is sequentially formed on the four electrodes from the horizontal transfer section 54 side. ₂ , φV ₁ , φV ₄ ,
Input φV _D3 . An electrode (not shown) to which the transfer gate signal TG ₁ is input is formed in a region between the dummy vertical register 60 and the horizontal transfer section 54. Then, the second register 62 on the side of the horizontal transfer unit 54.
Two electrodes extending in parallel with the horizontal transfer portion 54 are formed above, and vertical drive pulses φV ₄ odd and φV _D3 are sequentially input to the two electrodes from the horizontal transfer portion 54 side.

FIG. 10 shows a timing chart of the vertical transfer in FIG. 9, and the transfer operation will be described below.

First, at time t ₁ , vertical drive pulses φV ₁ , φV ₂ , φV ₄ , 1AφV ₃ , 2AφV ₃ , 3AφV ₃ , 4
AφV ₃ and signals V _G2A , V _G3A , and V _G4A are all set to L level. Then, at the next time t ₂ , the vertical drive pulse 1Aφ
V ₃ , 2AφV ₃ , 3AφV ₃ , 4AφV ₃ are set to H level. Next, the signal V _G2A at time t _3, V _G3A, the V _G4A to H level. The vertical drive pulse 1AφV ₃ is H
The voltage level becomes higher than the level, and when the vertical drive pulse 1AφV ₃ is again set to the H level at time t ₅ , the charges of the photodiode 51 are transferred to the A ₁ column of the vertical transfer unit 52.

Next, at time t ₇ , the vertical drive pulse 1Aφ
When V _{3 is set} to L level and the signal V _G2A becomes L level at time t ₈ , the charges in the A ₁ column of the vertical transfer unit 52 are transferred to the A ₂ column of the vertical transfer unit 52, and the charges of the photodiode 51 are transferred. Transfer to the A ₁ column of the vertical transfer unit 52. Then, the vertical drive pulse 1AφV ₃ is set to the H level again. Next,
Similar to the vertical drive pulse 1Eifai ₃ and signal V _2G2, to L level vertical drive pulses 2EifaiV ₃ and signal V _G3A out of phase, then the vertical drive pulses 3EifaiV ₃ and signal V
_{Shift the} phase of _G4A to L level. And time t
_{At 12} , the charges _first transferred to the A ₁ column of the vertical transfer unit 52 are transferred to the A ₄ column through the A ₂ column and the A ₃ column.

Next, the vertical drive pulse 4AφV _{3 is set} to L level and the vertical drive pulse φV ₄ is set to H level from L level for a predetermined period. When the vertical drive pulse φV ₄ becomes L level again, the vertical drive pulse φV ₁
To H level. Then, this vertical drive pulse φV ₁
The vertical drive pulse φV _{2 is set} to the H level after a predetermined period from the setting of the H level to the H level. Then, after the vertical drive pulse φV _{2 is set} to H level, the vertical drive pulse φV _{1 is set} to L level every predetermined period, the vertical drive pulse 4A φV _{3 is set} to H level after a predetermined period, and the vertical drive pulse 4AφV ₃ is set to vertical after a predetermined period. The drive pulse φV _{2 is set} to L level. Then, after a predetermined period of time, the vertical drive pulse 4AφV _{3 is set} to L level again to complete one vertical transfer. Then, the vertical drive pulse φV ₄ is again changed from the L level to the H level for a predetermined period, and the above operation is repeated in 1H cycle to output the charges to the horizontal transfer portion 54. At this time, the vertical drive pulse 1Aφ
By holding V ₃ , 2AφV ₃ and 3AφV ₃ at the H level, the charges in the A ₁ , A ₂ and A ₃ columns of the vertical transfer portion 52 are not vertically transferred and are stopped at that position.

In this way, the A of the vertical transfer unit 52 is
The charges in the _four columns are sequentially transferred vertically to the first register 61 of the dummy vertical register 60, but the vertical transfer is prohibited in the columns A ₁ , A ₂ , and A ₃ , so that the output of the dummy vertical register 60 is output. Only the electric charge in the A ₄ column is output to. That is, only the A ₄ column of the vertical transfer unit 52 is vertically transferred, and the remaining A ₁ columns are transferred.
The vertical transfer of columns A to ₃ is prohibited. It is also possible to vertically transfer any one of the columns A _{1 to} A ₃ of the vertical transfer unit 52 and prohibit the vertical transfer of the other columns. Therefore, even if the outputs of the vertical registers of columns A _{1 to} A ₄ of the vertical transfer unit 52 are input to the dummy vertical register 60,
From the output of the dummy vertical register 60, the vertical transfer unit 52
Output only the electric charge of one of the columns. That is, this solid-state imaging device has a multiplexer that selects and outputs the outputs of the vertical transfer units 52 and 53 corresponding to the photodiodes 51 in one column. The charges of the photodiodes 51 can be transferred to the columns B ₁ , B ₂ , B ₃ , and B _{4 of the} vertical transfer unit 53 by the same operation.

Then, by setting the transfer gate signal TG ₁ shown in FIG. 9 to the H level, the charges output from the dummy vertical register 60 are transferred to the horizontal transfer section 54. The horizontal transfer unit 54 was driven in two phases, and the transfer clock frequency was set to 1212f _H level.

Further, FIG. 11 shows A _{1 of the} vertical transfer unit 52.
This is an example of the timing that can be used when electric charge exists only in the column (when electric charge exists in only one column A). The timing until the time t ₁ ~t ₁₂ is the same as FIG. 10, differs only the timing of the horizontal transfer.

The principle of prohibiting the vertical transfer of charges in the vertical transfer portions 52 and 53 will be described below with reference to potential diagrams of FIGS. 12 (a) to 12 (f). 12 (a) to 12 (f), in order to simplify the description, the electrodes are vertical drive pulses φV1, φV2, φ.
There are four electrodes to which V3 and φV4 are applied.

First, as shown in FIG. 12A, the vertical drive pulse φV _{3 is set} to H level, and the potential well is always deepened. Then, the vertical drive pulses .phi.V charge stored in the region corresponding to the _third electrode, as shown in FIG. 12 (b), when the vertical drive pulse .phi.V ₄ is changed from L level to H level, the vertical drive pulses .phi.V ₃ , spreads to a region corresponding to the φV ₄ electrode. Next, as shown in FIG. 12C, when the vertical drive pulse φV _{4 is set} to the L level and the vertical drive pulse φV _{1 is set} to the H level, charges are collected again in the region corresponding to the electrode of the vertical drive pulse φV _3. . Next, as shown in FIG. 12D, the vertical drive pulse φV _{2 is changed} to L
When the level is changed to the H level, the vertical drive pulse φV ₁ ~
The charge spreads to the region corresponding to the φV ₃ electrode. Next,
As shown in FIG. 12E, when the vertical drive pulse φV1 is changed from the H level to the L level, the vertical drive pulses φV ₂ and φV
_The electric charge is collected in the area corresponding to the electrode of ₃ . And FIG.
As shown in FIG. 2 (f), when the vertical drive pulse φV ₂ is changed from the H level to the L level, electric charges are collected again in the region corresponding to the electrode of the vertical drive pulse φV ₃ . In this way, the vertical drive pulse φV ₃ is constantly set to the H level,
Even if the vertical drive pulses φV ₁ , φV ₂ , and φV ₄ try to transfer the charges in the procedure of (a) to (f), the transfer can be prohibited.

Further, a method of adding two pixels in the case of the interlaced scanning method will be described with reference to the potential diagram 12 of FIGS. 13 (a) to 13 (c).

First, in FIG. 13 (a), the charges n, n + 1, n + 2, n + 3, ... Transferred to the vertical transfer portions 52, 53 have vertical drive pulses φV ₁ , φV ₃ of H level. When the vertical drive pulses φV ₂ and φV ₄ are set to the L level, they are separately collected in the regions corresponding to the electrodes of the vertical drive pulses φV ₁ and φV ₃ . Then, as shown in FIG. 13B, when the vertical drive pulse φV ₂ is changed from the L level to the H level, the vertical drive pulse φV ₂
The charges of the regions of the vertical drive pulses φV ₁ and φV ₃ that are adjacent to each other with the region corresponding to the electrodes of the electrodes sandwiched therebetween are added, and the charges n + (n + 1), (n + 2) + (n + 3 ), ... Next, FIG.
As shown in (c), the vertical drive pulses φV ₁ and φV _{2 change} from the H level to the L level, and the added charges are collected in a region corresponding to the electrode of each vertical drive pulse φV ₃ .
The state is equivalent to that of FIG. In this way, the added charge can be prohibited by constantly setting the vertical drive pulse φV ₃ to the H level.

As described above, the solid-state image pickup device having the above structure is
Vertical drive pulses φV ₁ , φV ₂ , φV which are four-phase drive pulses
₄ , 1AφV ₃ , 2AφV ₃ , 3AφV ₃ , 4AφV ₃ , 1BφV
Control circuit (not shown) as means for controlling ₃ , 2BφV ₃ , 3BφV ₃ , 4BφV ₃ and vertical drive pulse φV _D3
And the dummy vertical register 60 form a multiplexer. Then, this multiplexer can transfer any one column of the vertical transfer unit 52 and any one column of the vertical transfer unit 53 to the horizontal transfer unit 54. In addition, the charges of the photodiodes 51 in one column are transferred to the vertical registers in eight columns at different timings, and the horizontal transfer unit 54 for each column is performed by the multiplexer.
It is possible to capture high-speed continuous electronic shutter images of up to 8 frames since they can be transferred to and output. Further, the A ₁ line to A ₄ rows of signal charges in the vertical transfer unit 52, _one row .about.B ₄ rows B of the vertical transfer portion 53 as smear charges, etc., when correcting the noise charge, up to 4 frames Capable of capturing high-speed continuous images.

Further, by having the above multiplexer, the horizontal transfer section can be simplified and the vertical transfer rate and the horizontal transfer rate can be lowered.

Further, as the metal for the transfer clock of the vertical transfer sections 52 and 53, vertical drive pulses φV ₁ and φ
V ₂ and φV ₄ and vertical drive pulse φV ₃ for a plurality of columns (1Aφ
V ₃ , 2AφV ₃ , 3AφV ₃ , 4AφV ₃ , 1BφV ₃ , 2Bφ
V ₃ , 3BφV ₃ , 4BφV ₃ and φV _D2 ) are required), but new metal wiring for inhibiting transfer is not required.

In the first embodiment described above, it is desirable that the solid-state image pickup device has a horizontal transfer portion having a charge transfer area that is an integral multiple of the total number of pixels in the horizontal direction and the number of dummy bits. In the first embodiment, the vertical transfer pulses vertical drive pulse .phi.V _A, by electrically isolating the .phi.V _B, 1 row photodiode pair of corresponding to 3 A and B registers to photodiode The charges of 3 can be transferred at different timings.

Further, in the second and third embodiments, the horizontal transfer section having the charge transfer area twice as many as the total number of pixels in the horizontal direction and the number of dummy bits is used, but the number of pixels in the horizontal direction is used. It is also possible to use a horizontal transfer unit having an electric charge transfer unit that is an integer multiple of the total number of dummy bits. In addition, the horizontal transfer unit may be a one-wire type or a two-wire type so that it is convenient for the charge transfer region, which is twice the total number of pixels in the horizontal direction and the number of dummy bits, to cancel noise charges. , The number of charge transfer regions in the horizontal transfer section is important.

Needless to say, the present invention is not limited to the above-mentioned first, second, third and fourth embodiments.

[0081]

As is apparent from the above, the solid-state image pickup device according to the invention of claim 1 has a plurality of columns of vertical transfer portions corresponding to one column of photoelectric conversion elements.

Therefore, according to the solid-state image pickup device of the first aspect of the present invention, the charge of the sum of the signal charge and the noise charge and the noise charge are read into the vertical transfer units of different columns to separate the respective charges. The noise charge can be removed by subtracting the noise charge from the sum of the signal charge and the noise charge. Therefore, even when the signal charge in the high-speed shutter mode or the like is small, it is possible to realize a solid-state imaging device that has good smear characteristics and reduces noise due to dark current.

Further, at a low transfer rate, the charge storage time in the vertical transfer section becomes long, and even if the noise charge becomes large due to the dark current, the noise charge can be removed, so that the S / N deterioration can be prevented. .

Since the dark current of the photoelectric conversion element during high temperature operation can be corrected, the influence of the dark current during high temperature operation can be reduced and the S / N can be improved.

The solid-state image pickup device according to the invention of claim 2 is
The solid-state imaging device according to claim 1 further comprises means for calculating the charge information in the first vertical transfer section and the charge information in the second vertical transfer section.

Therefore, according to the solid-state image pickup device of the second aspect of the invention, the sum of the signal charge and the noise charge is read into the first vertical transfer section, and the noise charge is read into the second vertical transfer section. Thus, the noise charge can be removed by subtracting the noise charge from the sum of the signal charge and the noise charge.

The solid-state image pickup device according to the invention of claim 3 is
In the solid-state image pickup device according to the first aspect, the output of the vertical transfer unit provided in the optical black unit is multi-output, and only one system of this output is selected and transferred to the horizontal transfer unit.

Therefore, according to the solid-state imaging device of the third aspect of the present invention, only one system is selected from the outputs of the multi-output of the vertical transfer unit, which are less influenced by the oblique spot light, that is, the output of which the signal charge is small. Correct dark output can be obtained from the optical black part. Therefore, the black level can be corrected by using the dark output of the optical black portion, and a good image can be obtained.

The solid-state image pickup device according to the invention of claim 4 is
The solid-state imaging device according to any one of claims 1 to 3, further comprising a horizontal transfer unit having a charge transfer region that is an integral multiple of the total number of pixels in the horizontal direction and the number of dummy bits.

Therefore, according to the solid-state image pickup device of the fourth aspect of the present invention, since the charges from the plurality of vertical transfer units can be simultaneously output while being separated to the horizontal transfer units, the transfer rate can be increased and the high-speed image pickup can be performed. can do.

Further, since the noise charge and the sum of the signal charge and the noise charge can be simultaneously output while being separated, the noise charge can be easily removed.

Further, in the solid-state image pickup device having a color RGB primary color stripe filter or the like, the charges of the pixels corresponding to the respective RGB are simultaneously transferred to the horizontal transfer section, and these charges are separated into the charges corresponding to the respective RGB. Can be output.

The solid-state image pickup device according to the invention of claim 5 is
The solid-state imaging device according to claim 4 is provided with a transfer control unit that transfers the charges of the photoelectric conversion elements in one column to the vertical transfer units in a plurality of columns at different timings.

Therefore, according to the solid-state image pickup device of the fifth aspect of the present invention, since the charge of the sum of the signal charge and the noise charge and the noise charge can be transferred to different vertical transfer portions at different timings, the noise charge can be easily generated. Can be removed. Therefore, it is possible to realize a solid-state imaging device having good smear characteristics and reducing dark current noise.

Further, since a plurality of images can be transferred to the vertical transfer units of a plurality of columns at different timings, high-speed continuous image pickup can be performed.

The solid-state image pickup device according to the invention of claim 6 is
The solid-state imaging device according to any one of claims 1 to 5, further comprising a multiplexer that transfers charges in a plurality of columns of vertical transfer units corresponding to the one column of photoelectric conversion elements to a horizontal transfer unit.

Therefore, according to the solid-state imaging device of the sixth aspect of the present invention, the charges of the plurality of images transferred to the vertical transfer units of the plurality of columns can be stored and output separately. Therefore, a plurality of high-speed electronic shutter images can be obtained, and high-speed continuous imaging can be performed.

The solid-state image pickup device according to the invention of claim 7 is
7. The solid-state imaging device according to claim 6, wherein the multiplexer transfers the charges of the vertical transfer units of at least one column of the vertical transfer units of the plurality of columns and prohibits the transfer of the charges of other vertical transfer units. , Receiving the transferred charge,
And a shift register for transferring the charges to the horizontal transfer section.

Therefore, according to the solid-state image pickup device of the present invention, at least one column of charges transferred to the plurality of columns of vertical transfer portions can be transferred, so that a plurality of high-speed electronic shutter images can be displayed. It can be taken out and output separately.

Further, the solid-state image pickup device according to the invention of claim 8 is
The solid-state imaging device according to claim 7, wherein the charges in the vertical transfer units in the plurality of columns are transferred by a drive pulse having a predetermined number of phases,
The charges in the shift register are transferred by drive pulses having the same number of phases as the vertical transfer units in a plurality of columns.

Therefore, according to the solid-state image pickup device of the eighth aspect, the control circuits for the vertical transfer separation of the plurality of columns and the drive pulse of the shift register can be made substantially common and can be simplified.

[Brief description of drawings]

FIG. 1 is a sectional view of a solid-state imaging device according to a first embodiment of the present invention.

FIG. 2 is a plan view of a solid-state imaging device (horizontal transfer unit 1-wire type) according to a second embodiment of the present invention.

FIG. 3 is a diagram showing a transfer operation to a vertical transfer unit of the second embodiment.

FIG. 4 is a plan view of a solid-state image pickup device (horizontal transfer unit, two-wire system) according to a third embodiment of the present invention.

FIG. 5 is an enlarged plan view of a horizontal transfer unit according to the third embodiment.

6 (a) is a sectional view taken along the line I-I of FIG. 5, and FIG. 6 (b) is a sectional view taken along the line II-II of FIG.

FIG. 7 is a timing chart showing a transfer operation to a horizontal transfer unit of the third embodiment.

FIG. 8 is a plan view of a solid-state image pickup device according to a fourth embodiment of the present invention.

FIG. 9 is an enlarged plan view of a main part of the solid-state imaging device according to the fourth embodiment.

FIG. 10 is a timing chart showing an operation of vertical transfer according to the fourth embodiment.

FIG. 11 is a timing chart showing another vertical transfer operation of the fourth embodiment.

FIG. 12 is a potential diagram of the vertical transfer unit of the fourth embodiment.

FIG. 13 is a potential diagram showing addition of charges of two pixels in the vertical transfer unit of the fourth embodiment.

FIG. 14 is a sectional view of a conventional solid-state imaging device.

FIG. 15 is a schematic diagram showing the movement of signal charges in a conventional solid-state imaging device.

FIG. 16 is an enlarged plan view of a main part of a conventional solid-state imaging device.

[Explanation of symbols]

1 ... N-type silicon substrate, 2 ... P ^- well, 3 ... Photodiode, 4a, 4b ... Vertical transfer part, 5 ... P ⁺ pixel isolation region, 6 ... Insulating film, 7 ... Gate electrode, 8, 9 ... Shading metal 10 ... Color filter, 11 ... Microlens.

Claims (8)

[Claims] 1. A solid-state image pickup device comprising a plurality of columns of vertical transfer units corresponding to one column of photoelectric conversion elements. 2. The solid-state imaging device according to claim 1, further comprising means for calculating charge information of the first vertical transfer unit and charge information of the second vertical transfer unit. . 3. The solid-state imaging device according to claim 1, wherein the output of the vertical transfer unit provided in the optical black unit is multi-output, and only one system of the output is selected and transferred to the horizontal transfer unit. A solid-state image pickup device comprising: 4. The solid-state image pickup device according to claim 1, further comprising a horizontal transfer unit having a charge transfer region that is an integral multiple of the total number of pixels in the horizontal direction and the number of dummy bits. A solid-state image pickup device comprising. 5. The solid-state imaging device according to claim 1, wherein the transfer control unit transfers the charges of the photoelectric conversion elements in the one column to the vertical transfer units in the plurality of columns at different timings. A solid-state imaging device comprising: 6. The solid-state imaging device according to claim 5, further comprising a multiplexer that transfers the charges of the vertical transfer units of the plurality of columns corresponding to the photoelectric conversion elements of the one column to the horizontal transfer unit. Solid-state imaging device. 7. The solid-state imaging device according to claim 6, wherein the multiplexer transfers the electric charge of at least one column of vertical transfer units of the plurality of columns of vertical transfer units,
A solid-state imaging device comprising: a means for inhibiting transfer of charges from another vertical transfer unit; and a shift register that receives the transferred charges and transfers the charges to the horizontal transfer unit. 8. The solid-state imaging device according to claim 7, wherein the charges of the vertical transfer units of the plurality of columns are transferred by a drive pulse having a predetermined number of phases, and the charges of the shift register are of the vertical transfer units of the plurality of columns. The solid-state imaging device is characterized in that it is transferred by drive pulses having the same number of phases as.