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JPH06171236A - Optical recording medium - Google Patents

Optical recording medium

Info

Publication number
JPH06171236A
JPH06171236A JP4337193A JP33719392A JPH06171236A JP H06171236 A JPH06171236 A JP H06171236A JP 4337193 A JP4337193 A JP 4337193A JP 33719392 A JP33719392 A JP 33719392A JP H06171236 A JPH06171236 A JP H06171236A
Authority
JP
Japan
Prior art keywords
layer
recording
recording medium
reflectance
optical recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4337193A
Other languages
Japanese (ja)
Inventor
Masato Harigai
眞人 針谷
Yukio Ide
由紀雄 井手
Osamu Nonoyama
治 野々山
Yoshiyuki Kageyama
喜之 影山
Hiroko Iwasaki
博子 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP4337193A priority Critical patent/JPH06171236A/en
Publication of JPH06171236A publication Critical patent/JPH06171236A/en
Pending legal-status Critical Current

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  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

PURPOSE:To obtain an optical recording medium having high reliability by utilizing the reflectivity difference due to thermal diffusion between Al or Au and Ge in a write-once optical recording medium recordable only once by providing a recording layer consisting of an Al- or Au-layer and a Ge-layer. CONSTITUTION:A write-once optical recording medium is constituted so as to be recordable only once. For example, a recording layer 3 is laminated on the upper surface of a substrate 1 through a heat-resistance protective layer 2. In this case, the recording layer 3 is formed from an Al- or Au-layer 3-2 and a Ge-layer 3-1. The Ge-layer 3-1 is arranged on the side of the substrate 1 and the Al- or Au-layer 3-2 is arranged on the upper surface of the Ge-layer 3-1. Further, a Ge or Al oxide layer is not allowed to be present between the Ge-layer 3-1 and the A-layer 3-2. At the time of recording, Al or Au and Ge is mutually thermally diffused to generate large reflectivity difference to enable writing.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、書き込み可能な光記録
媒体例えばCDに関する。
FIELD OF THE INVENTION The present invention relates to a writable optical recording medium such as a CD.

【0002】[0002]

【従来の技術】現在記録可能なCDとしては有機物質で
ある色素を記録材料として用いたものが市販されてい
る。しかし、この材料は光による劣化を起したり、再生
光の波長によって反射率の変化が大きいという問題があ
った。
2. Description of the Related Art At present, as a recordable CD, a CD which uses an organic dye as a recording material is commercially available. However, this material has problems that it is deteriorated by light and that the reflectance changes greatly depending on the wavelength of the reproduction light.

【0003】一方無機材料を記録材料として用いる場合
は、70%以上の高反射率を得るために金属を記録材料
として用いる必要があり、この金属材料の融点が高いの
で記録感度が低いという欠点がある。
On the other hand, when an inorganic material is used as the recording material, it is necessary to use a metal as the recording material in order to obtain a high reflectance of 70% or more. Since the melting point of this metal material is high, the recording sensitivity is low. is there.

【0004】現在知られている光ディスクを分類する
と、オーディオコンパクトディスクに代表される再生専
用形、一回記録が可能な追記形、光磁気効果および相転
移を利用した書き換え可能形のものが存在する。
When classifying currently known optical discs, there are a read-only type represented by an audio compact disc, a write-once type capable of recording once, and a rewritable type utilizing a magneto-optical effect and a phase transition. .

【0005】一回記録形の材料である無機材料はTe系
を代表とした穴明け形と相変化形のものがある。穴明け
形はTeC、TeSe等であり、相変化形はTeO2
典型である。
Inorganic materials that are single-recording type materials include a pierced type and a phase change type, which are represented by Te series. The perforated type is TeC, TeSe, etc., and the phase change type is typically TeO 2 .

【0006】一方、有機材料ではポリメチン系、環状ア
ザアヌレン系等の色素が利用される。
On the other hand, as organic materials, dyes such as polymethine dyes and cyclic azaannulene dyes are used.

【0007】しかし、無機材料の穴明け型に用いられる
Teは耐湿性に問題があり、相変化型のTeO2型は反
射率の点で従来のCDとの互換性がないのが問題であ
る。
However, Te used for the perforated type of inorganic material has a problem in moisture resistance, and the phase change type TeO 2 type has a problem that it is not compatible with the conventional CD in terms of reflectance. .

【0008】一方、有機材料は耐光性が充分でない。On the other hand, organic materials have insufficient light resistance.

【0009】[0009]

【発明が解決しようとする課題】本発明は、従来技術の
上記問題点を解決し、信頼性の高い追記形の光記録材料
を提供しようとするものである。
SUMMARY OF THE INVENTION The present invention is intended to solve the above problems of the prior art and to provide a highly reliable write-once type optical recording material.

【0010】[0010]

【課題を解決するための手段】上記課題を解決するため
の本発明の構成は特許請求の範囲に記載のとおりの光記
録媒体である。
The constitution of the present invention for solving the above-mentioned problems is an optical recording medium as set forth in the claims.

【0011】すなわち、AlとGeの2層構造の記録層
とし、これに電磁波、特に、半導体レーザーを照射する
ことによりAlとGeの間に相互拡散を起させ、Alと
Geの偏析を生じさせて大きな反射率変化を起させる光
記録媒体である。
That is, a recording layer having a two-layer structure of Al and Ge is irradiated with electromagnetic waves, particularly a semiconductor laser, to cause mutual diffusion between Al and Ge, thereby causing segregation of Al and Ge. It is an optical recording medium that causes a large change in reflectance.

【0012】記録のために照射されるLD光を効率的に
利用するためには記録媒体の基板側にGe層を配置する
のがよい。
In order to efficiently use the LD light emitted for recording, it is preferable to dispose a Ge layer on the substrate side of the recording medium.

【0013】この様にして得られた記録膜は基板側から
の反射率をみると、波長830nmに対して初期状態で
は10%の反射率であったものが、熱によるAl又はA
uとGeの相互拡散による偏析の結果、70%台の反射
率に上昇する。
When the reflectance of the recording film thus obtained from the substrate side was 10% in the initial state with respect to the wavelength of 830 nm, the reflectance of Al or A caused by heat increased.
As a result of segregation due to the mutual diffusion of u and Ge, the reflectance increases to 70%.

【0014】従って従来のCD−ROMに近い反射率変
化を有すると同時にAl系のためTe系に比較して耐候
性が向上する。従って本発明の材料系においては、従来
のCD−ROMと互換が可能な追記形記録媒体を提供す
ることが可能となる。又、基板側にAl又はAuを、そ
してその上にGeを配置する記録媒体においてもこの2
層の膜厚を制御すれば、比較的高感度な記録媒体を提供
することが可能である。
Therefore, the weather resistance is improved as compared with the Te system because it has the reflectance change close to that of the conventional CD-ROM and is Al system. Therefore, in the material system of the present invention, it becomes possible to provide a write-once recording medium compatible with the conventional CD-ROM. Also, in a recording medium in which Al or Au is arranged on the substrate side and Ge is arranged thereon, this 2
By controlling the layer thickness, it is possible to provide a recording medium with relatively high sensitivity.

【0015】このように本発明の基体はGe層とAl層
又はAu2層が記録層であり、記録時にこの2層間での
Al又はAuとGeの拡散・偏析により光学定数の変化
を得ることである。これにより極めて大きな反射率を獲
得することが可能となる。又、Al系又はAu系のため
耐候性もTe系や有機系に比較して良好である。
As described above, in the substrate of the present invention, the Ge layer and the Al layer or the Au2 layer are recording layers, and at the time of recording, the optical constant can be changed by the diffusion / segregation of Al or Au and Ge between the two layers. is there. This makes it possible to obtain extremely high reflectance. Further, since it is an Al type or an Au type, the weather resistance is better than that of a Te type or an organic type.

【0016】本発明は追記形光記録材料に関するもので
あり、その特徴とするところはGe層とAl層又はAu
の2層を記録層とするものであり、記録に際して電磁
波、特には半導体レーザを照射することにより、Al層
又はAu層とGe層との間にAl又はAuとGeの相互
拡散を起させ、これによりAl又はAuとGeの偏析が
生じて、光学定数の変化が起ることを利用するものであ
る。この時入射する半導体レーザー光を効率的に利用す
るためには記録媒体の基板側にGe層を配置するのが好
ましい。またAl層はGe層に直接接していることが必
要である。すなわちAl層とGe層の間に酸化物、例え
ば酸化ゲルマニウムや酸化アルミニウム層等が存在する
とAlとGeの相互拡散が阻害され記録感度が低下する
場合があるからである。
The present invention relates to a write-once optical recording material, which is characterized by a Ge layer and an Al layer or Au.
The above two layers are used as a recording layer, and by irradiating an electromagnetic wave, particularly a semiconductor laser, during recording, mutual diffusion of Al or Au and Ge is caused between the Al layer or Au layer and the Ge layer, This utilizes the fact that segregation of Al or Au and Ge occurs to cause a change in optical constant. In order to efficiently use the incident semiconductor laser light at this time, it is preferable to dispose the Ge layer on the substrate side of the recording medium. The Al layer needs to be in direct contact with the Ge layer. That is, if an oxide such as a germanium oxide or aluminum oxide layer is present between the Al layer and the Ge layer, interdiffusion of Al and Ge may be hindered and the recording sensitivity may be lowered.

【0017】この記録層の機能を具体的に説明する。レ
ーザーの照射により記録層即ちGe層上のスポット部の
温度が上昇するとGe層とAl層のGeとAlが相互に
熱拡散し、記録前のGe層部分に比較し、スポット部は
Alリッチになる(Ge及びAlの膜厚によってはその
スポット部がGeからAlのみになる場合がある。これ
はGeが蒸発してなくなっているのではなく拡散による
ことがオージエ電子分光法から確認されている)。従っ
て反射率が上昇することになる。いわゆるロウ→ハイ記
録が実現される。もちろんハイ→ロウ記録を行いたい場
合はAl層とGe層をいれかえればよい。但しレーザー
入射側にAl層が設置されるため記録感度が低下するお
それがある。
The function of this recording layer will be specifically described. When the temperature of the spot portion on the recording layer, that is, the Ge layer is increased by laser irradiation, Ge and Al of the Ge layer and the Al layer are thermally diffused mutually, and the spot portion becomes Al-rich as compared with the Ge layer portion before recording. (Depending on the film thicknesses of Ge and Al, the spot portion may be only Ge to Al. It is confirmed from Auger electron spectroscopy that this is due to diffusion rather than evaporation and elimination of Ge. ). Therefore, the reflectance increases. So-called low-to-high recording is realized. Of course, if high-to-low recording is desired, the Al layer and the Ge layer may be exchanged. However, since the Al layer is provided on the laser incident side, the recording sensitivity may decrease.

【0018】本発明の記録媒体の構成を図1に示す基板
1としては通常ガラス、セラミックスあるいは樹脂であ
るが、樹脂基板が成型性、コスト等の点で好適である。
樹脂の代表例としてはポリカーボネート樹脂、アクリル
樹脂、エポキシ樹脂、ポリプレン樹脂、シリコン系樹
脂、フッ素系樹脂、ABS樹脂、ウレタン樹脂等が挙げ
られるが、加工性、光学特性等の点でポリカーボネート
樹脂、アクリル系が好ましい。又、基板の形状としては
ディスク状、カード状、あるいはシート状であってもよ
い。
The substrate 1 of the recording medium of the present invention shown in FIG. 1 is usually glass, ceramics or resin, but a resin substrate is preferable in terms of moldability and cost.
Typical examples of the resin include polycarbonate resin, acrylic resin, epoxy resin, polypropylene resin, silicon resin, fluorine resin, ABS resin, urethane resin, and the like, but polycarbonate resin, acrylic resin, acrylic resin, acrylic resin, etc. in terms of processability and optical characteristics. Systems are preferred. Further, the substrate may have a disk shape, a card shape, or a sheet shape.

【0019】耐熱性保護層2の材料としては、SiO、
SiO2、ZnO、SnO2、Al23、TiO2、In2
3、MgO、ZrO2等の金属酸化物、Si34、Al
N、 TiN、BN、ZrNなどの窒化物、ZnS、I
23、TaS4等の硫化物、SiC、TaC、B4C、
WC、TiC、ZrCなどの炭化物やダイヤモンド状カ
ーボンあるいはそれらの混合物があげられる。又、必要
に応じて不純物を含んでいてもよい。このような耐熱性
保護層は各種気相成長法、例えば真空蒸着法、スパッタ
リング法、プラズマCVD法、光CVD法、イオンプレ
ーティング法、電子ビーム蒸着法等によって形成でき
る。
As the material of the heat resistant protective layer 2, SiO,
SiO 2, ZnO, SnO 2, Al 2 O 3, TiO 2, In 2
Metal oxides such as O 3 , MgO and ZrO 2 , Si 3 N 4 and Al
N, TiN, BN, nitrides such as ZrN, ZnS, I
sulfides such as n 2 S 3 and TaS 4 , SiC, TaC, B 4 C,
Examples thereof include carbides such as WC, TiC, ZrC, diamond-like carbon, and mixtures thereof. Moreover, you may contain impurities as needed. Such a heat resistant protective layer can be formed by various vapor phase growth methods such as a vacuum vapor deposition method, a sputtering method, a plasma CVD method, a photo CVD method, an ion plating method and an electron beam vapor deposition method.

【0020】耐熱性保護層の膜厚としては200〜50
00Å、好適には500〜3000Åとするのがよい。
200Åより薄くなると耐熱性保護層としての機能を果
たさなくなり、逆に5000Åよりも厚くなると、感度
の低下をきたしたり、界面剥離を生じやすくなる。又、
必要に応じて保護層を多層化することもできる。
The thickness of the heat resistant protective layer is 200 to 50.
00Å, preferably 500 to 3000Å.
When the thickness is less than 200Å, the function as the heat resistant protective layer is not fulfilled, and when the thickness is more than 5000Å, the sensitivity is lowered and the interfacial peeling is likely to occur. or,
If necessary, the protective layer can be multi-layered.

【0021】又、記録層3としてのGe層3−1並びに
Al層3−2は真空蒸着法、スパッタリング法等により
形成できる。この時のGe層の膜厚としては50Åから
1000Åがより好ましくは150Åから500Åがよ
い。又Alの膜厚は50Åから1500Åの間がよく、
好ましくは100Åから500Åの間がよい。
The Ge layer 3-1 and the Al layer 3-2 as the recording layer 3 can be formed by a vacuum vapor deposition method, a sputtering method or the like. At this time, the thickness of the Ge layer is preferably 50Å to 1000Å, more preferably 150Å to 500Å. Also, the film thickness of Al should be between 50Å and 1500Å,
It is preferably between 100Å and 500Å.

【0022】記録、再生に用いる電磁波としてはレーザ
ー光、電子線、X線、紫外線、可視光線、赤外線、マイ
クロ波等、数種のものが採用可能であるが、ドライブに
取付ける際、小型でコンパクトな半導体レーザーが最適
である。
As the electromagnetic waves used for recording and reproduction, several kinds such as laser light, electron beams, X-rays, ultraviolet rays, visible rays, infrared rays and microwaves can be adopted, but when mounted on a drive, they are small and compact. Most suitable semiconductor lasers are suitable.

【0023】[0023]

【実施例】以下、実施例によって本発明を具体的に説明
する。ただし、この実施例は本発明をなんら制限するも
のではない。
EXAMPLES The present invention will be specifically described below with reference to examples. However, this example does not limit the present invention in any way.

【0024】実施例1 ピッチ1.6μm、深さ700Åの溝付き、厚さ1.2
mm、直径86mmφのポリカーボネート基板上にrf
スパッタリング法により耐熱保護層としてZnS−Si
2膜を2000Å、記録層としてGe膜を250Å、
Al膜を300Å順次積層し、評価用光デイスクを作製
した。又このディスクの反射率を測定するため30mm
×30mm×1mmのガラス基板を取りつけた。
Example 1 Pitch of 1.6 μm, depth of 700 Å with grooves, thickness of 1.2
mm on a polycarbonate substrate with a diameter of 86 mm and rf
ZnS-Si as a heat-resistant protective layer by a sputtering method
O 2 film 2000 Å, the Ge film as the recording layer 250 Å,
An optical film for evaluation was manufactured by sequentially stacking 300 Å Al films. Also, to measure the reflectance of this disc, 30 mm
A glass substrate having a size of x30 mm x 1 mm was attached.

【0025】成膜後のガラス基板の分光反射率を測定
し、さらにこれを300℃、30分で熱処理した後の分
光反射率を測定した。その値を表1に示す。反射率はガ
ラス基板側から測定した。
The spectral reflectance of the glass substrate after film formation was measured, and the spectral reflectance after heat treatment at 300 ° C. for 30 minutes was measured. The values are shown in Table 1. The reflectance was measured from the glass substrate side.

【0026】[0026]

【表1】 [Table 1]

【0027】表1からわかる様に本記録膜を熱処理する
ことより大きく反射率が増加することがわかる。又、本
試料をオージエ電子分光法により厚さ方向にAlとGe
の濃度プロフィルを求めてみると熱処理前は基板側でG
e、自由表面側でAlであったものが熱処理することに
より基板側でAlリッチになっており、AlとGeが相
互拡散していることがわかった。
As can be seen from Table 1, the heat treatment of this recording film greatly increases the reflectance. Also, this sample was analyzed by Auger electron spectroscopy in the thickness direction for Al and Ge.
The density profile of the
e, it was found that what was Al on the free surface side was Al rich on the substrate side by heat treatment, and Al and Ge were interdiffused.

【0028】次に線速1.3m/sのもとで波長830
nmの半導体レーザーを用いて680KHzの信号を記
録した。この時のディスク面のレーザーパワーは10m
Wとした。
Next, at a linear velocity of 1.3 m / s, a wavelength of 830
A 680 KHz signal was recorded using a semiconductor laser of nm. The laser power of the disk surface at this time is 10 m
W.

【0029】そしてこの記録信号をオーディオコンパク
トディスク用の評価装置で評価したところC/Nとして
53dBの値を得た。
When this recording signal was evaluated by an evaluation device for audio compact discs, a C / N value of 53 dB was obtained.

【0030】実施例2 実施例1と同様な手続きにより記録媒体を製作した。耐
熱保護層のZnS−SiO2は2000Å、そして記録
層のGe層は250Å、Al層は150Åとした。又こ
の時の媒体の反射率を測定するため30mm×30mm
×1mmのガラス基板を取りつけておいた。そして製膜
後、このガラス基板の分光反射率を測定し、さらに30
0℃で30分間熱処理した後の分光反射率も測定した。
その結果を表2に示す。
Example 2 A recording medium was manufactured by the same procedure as in Example 1. ZnS-SiO 2 of the heat-resistant protective layer was 2000 Å, and the Ge layer of the recording layer was 250 Å and the Al layer was 150 Å. Moreover, in order to measure the reflectance of the medium at this time, 30 mm x 30 mm
A × 1 mm glass substrate was attached. Then, after film formation, the spectral reflectance of this glass substrate is measured and further 30
The spectral reflectance after heat treatment at 0 ° C. for 30 minutes was also measured.
The results are shown in Table 2.

【0031】[0031]

【表2】 [Table 2]

【0032】表2からわかる様に本記録膜を熱処理する
ことより反射率が大きく増加することがわかる。次に実
施例1と同様に線速1.3m/sのもとで波長830n
mの半導体レーザーを用いて680KHzの信号を記録
した。この時のレーザーパワーはディスク面で10mW
とした。そしてこの記録信号のC/Nをオーディオコン
パクトディスク用の評価装置で評価したところ50dB
の値を得た。
As can be seen from Table 2, the heat treatment of this recording film significantly increases the reflectance. Next, in the same manner as in Example 1, a wavelength of 830 n was obtained under a linear velocity of 1.3 m / s.
A 680 KHz signal was recorded using a semiconductor laser of m. The laser power at this time is 10 mW on the disk surface.
And The C / N of this recording signal was evaluated by an evaluation device for audio compact discs to be 50 dB.
Got the value of.

【0033】実施例3 実施例1,2と同様な手続きにより記録媒体を製作し
た。耐熱保護層のZnS、SiO2の厚みは2000
Å、記録層のGe層は250Å、Al層は500Åとし
た。又この時の記録媒体の反射率を測定するために30
mm×30mm×1mmのガラス基板を取りつけておい
た。そして製膜後このガラス基板の分光反射率を測定
し、さらに350℃で30分間熱処理した後の分光反射
率も測定した。その結果を表3に示す。
Example 3 A recording medium was manufactured by the same procedure as in Examples 1 and 2. The thickness of ZnS and SiO 2 of the heat resistant protective layer is 2000
Å, the Ge layer of the recording layer was 250 Å, and the Al layer was 500 Å. Also, in order to measure the reflectance of the recording medium at this time, 30
A glass substrate of mm × 30 mm × 1 mm was attached. After film formation, the spectral reflectance of this glass substrate was measured, and the spectral reflectance after heat treatment at 350 ° C. for 30 minutes was also measured. The results are shown in Table 3.

【0034】[0034]

【表3】 [Table 3]

【0035】表3から明らかな様に本発明による記録膜
は熱処理により反射率が大きく増加することがわかる。
この反射率の増大は熱処理することにより、AlとGe
が相互拡散を行い、基板側でAlリッチになることがオ
ージエ電子分光法から確認された。
As is clear from Table 3, the reflectance of the recording film according to the present invention is greatly increased by heat treatment.
This increase in reflectance can be obtained by heat treatment of Al and Ge.
It was confirmed from the Auger electron spectroscopy that each of the elements diffused into each other and became Al-rich on the substrate side.

【0036】次に実施例1,2と同様に線速1.3m/
sのもとで波長830nmの半導体レーザーを用いて6
80KHzの信号を記録した。その時のレーザーパワー
はディスク面で10mWとした。そしてこの記録信号の
C/Nをオーディオコンパクトディスク用の評価装置で
評価したところ53dBの値を得た。
Next, as in Examples 1 and 2, a linear velocity of 1.3 m /
6 using a semiconductor laser with a wavelength of 830 nm under
The 80 KHz signal was recorded. The laser power at that time was 10 mW on the disk surface. When the C / N of this recording signal was evaluated by an evaluation device for audio compact discs, a value of 53 dB was obtained.

【0037】実施例4 実施例1,2,3と同様な方法で記録層をGe層250
Å、Au層250Å、耐熱保護層としてSiO2:20
00Åを設けた記録媒体を作製した。この膜の分光特性
を表4に示す。
Example 4 A recording layer was formed as a Ge layer 250 in the same manner as in Examples 1, 2, and 3.
Å, Au layer 250 Å, SiO 2 : 20 as heat resistant protective layer
A recording medium provided with 00Å was produced. Table 4 shows the spectral characteristics of this film.

【0038】[0038]

【表4】 [Table 4]

【0039】この結果から本発明における記録膜は熱処
理により反射率が大いに増加することがわかる。オージ
エ電子分光法によれば、Al−Ge系と同様なAuとG
eの相互拡散が起っていることが確認された。次に線速
1.3m/sのもとで波長830nmの半導体レーザを
用いて680kHzの信号を記録した。その時のパワー
は10mWとし、そのC/Nを評価したところ51dB
の値を得た。
From these results, it can be seen that the recording film of the present invention greatly increases in reflectance by heat treatment. According to Auger electron spectroscopy, Au and G similar to those of Al-Ge system
It was confirmed that mutual diffusion of e occurred. Then, a signal of 680 kHz was recorded using a semiconductor laser having a wavelength of 830 nm under a linear velocity of 1.3 m / s. The power at that time was set to 10 mW, and the C / N was evaluated to be 51 dB.
Got the value of.

【0040】以上実施例1,2,3,4から明らかな様
に本発明によるGeとAl又はAuを記録層とした光記
録媒体は書き込みが可能なコンパクトディスク用として
十分に使用が可能である。
As is clear from Examples 1, 2, 3, and 4, the optical recording medium having the recording layer of Ge and Al or Au according to the present invention can be sufficiently used for a writable compact disc. .

【0041】[0041]

【発明の効果】本発明の光記録媒体はその記録層がAl
層又はAu層とGe層の2層からなることを特徴とする
ものであり、記録時にAl又はAuとGeが相互に熱拡
散することにより、大きな反射率差を起させることがで
き、書き込みが可能なコンパクトデイスクを提供するこ
とができる。
The optical recording medium of the present invention has an Al recording layer.
Layer or two layers of Au layer and Ge layer, and when Al or Au and Ge mutually thermally diffuse during recording, a large reflectance difference can be caused, and writing can be performed. It is possible to provide a possible compact disk.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の光記録媒体の一例を示す断面の模式図
である。
FIG. 1 is a schematic sectional view showing an example of an optical recording medium of the present invention.

【符号の説明】[Explanation of symbols]

1 基板 2 耐熱保護層 3 記録層 3−1 Ge層 3−2 Al層 1 substrate 2 heat resistant protective layer 3 recording layer 3-1 Ge layer 3-2 Al layer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 影山 喜之 東京都大田区中馬込1丁目3番6号 株式 会社リコー内 (72)発明者 岩崎 博子 東京都大田区中馬込1丁目3番6号 株式 会社リコー内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshiyuki Kageyama 1-3-6 Nakamagome, Ota-ku, Tokyo Within Ricoh Co., Ltd. (72) Hiroko Iwasaki 1-3-6 Nakamagome, Ota-ku, Tokyo Shares Company Ricoh

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 Al層又はAu層とGe層とからなる記
録層を有することを特徴とする光記録媒体。
1. An optical recording medium having a recording layer composed of an Al layer or an Au layer and a Ge layer.
【請求項2】 基板側にGe層が存在し、そのGe層の
上にAl層又はAu層が存在することを特徴とする請求
項1記載の光記録媒体。
2. The optical recording medium according to claim 1, wherein a Ge layer is present on the substrate side, and an Al layer or an Au layer is present on the Ge layer.
【請求項3】 Ge層とAl層との間にGeまたはAl
の酸化物層が存在しないことを特徴とする請求項1また
は請求項2記載の光記録媒体。
3. Ge or Al between the Ge layer and the Al layer
3. The optical recording medium according to claim 1, wherein the oxide layer of 1. is absent.
JP4337193A 1992-10-05 1992-12-17 Optical recording medium Pending JPH06171236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4337193A JPH06171236A (en) 1992-10-05 1992-12-17 Optical recording medium

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP26591992 1992-10-05
JP4-265919 1992-10-05
JP4337193A JPH06171236A (en) 1992-10-05 1992-12-17 Optical recording medium

Publications (1)

Publication Number Publication Date
JPH06171236A true JPH06171236A (en) 1994-06-21

Family

ID=26547220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4337193A Pending JPH06171236A (en) 1992-10-05 1992-12-17 Optical recording medium

Country Status (1)

Country Link
JP (1) JPH06171236A (en)

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US5458941A (en) * 1994-06-09 1995-10-17 Minnesota Mining And Manufacturing Company Optical recording medium exhibiting eutectic phase equilbria
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US6773868B2 (en) * 2000-03-02 2004-08-10 Sony Corporation Method for producing recording medium, method for producing stamper of recording medium, apparatus for producing recording medium, and apparatus for producing stamper of recording medium
US6811948B2 (en) 2000-02-21 2004-11-02 Geoffrey Wen Tai Shuy Thin-film design for optical recording media
US6996055B2 (en) 2002-04-30 2006-02-07 Tdk Corporation Optical recording medium and method for optically recording data in the same
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US7231649B2 (en) 2002-05-31 2007-06-12 Tdk Corporation Optical recording medium and method for optically recording data in the same
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Publication number Priority date Publication date Assignee Title
US5458941A (en) * 1994-06-09 1995-10-17 Minnesota Mining And Manufacturing Company Optical recording medium exhibiting eutectic phase equilbria
EP0822543A1 (en) * 1996-07-30 1998-02-04 Industrial Technology Research Institute Write-once-read-many optical disk
US6811948B2 (en) 2000-02-21 2004-11-02 Geoffrey Wen Tai Shuy Thin-film design for optical recording media
US6773868B2 (en) * 2000-03-02 2004-08-10 Sony Corporation Method for producing recording medium, method for producing stamper of recording medium, apparatus for producing recording medium, and apparatus for producing stamper of recording medium
WO2003025924A1 (en) * 2001-09-13 2003-03-27 Tdk Corporation Optical recording medium
US7236440B2 (en) 2001-09-13 2007-06-26 Tdk Corporation Optical recording medium
US7211521B2 (en) 2002-04-23 2007-05-01 Heritage Power Llc Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer
WO2003091173A3 (en) * 2002-04-23 2004-03-11 Astropower Inc Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer
US7479363B2 (en) * 2002-04-26 2009-01-20 Tdk Corporation Optical recording medium and method for optically recording data in the same
US6996055B2 (en) 2002-04-30 2006-02-07 Tdk Corporation Optical recording medium and method for optically recording data in the same
US7231649B2 (en) 2002-05-31 2007-06-12 Tdk Corporation Optical recording medium and method for optically recording data in the same
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US7276274B2 (en) 2002-07-04 2007-10-02 Tdk Corporation Optical recording medium and method for recording and reproducing data
US7321481B2 (en) 2002-07-04 2008-01-22 Tdk Corporation Optical recording medium
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US7141289B2 (en) 2003-08-25 2006-11-28 Tdk Corporation Optical information recording medium
WO2006043214A3 (en) * 2004-10-19 2006-06-29 Koninkl Philips Electronics Nv Master substrate and method of manufacturing a high-density relief structure
US7541081B2 (en) * 2005-06-29 2009-06-02 Micron Technology, Inc. Phase change memory for archival data storage
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