JPH0617956B2 - Liquid crystal display manufacturing method - Google Patents
Liquid crystal display manufacturing methodInfo
- Publication number
- JPH0617956B2 JPH0617956B2 JP60015003A JP1500385A JPH0617956B2 JP H0617956 B2 JPH0617956 B2 JP H0617956B2 JP 60015003 A JP60015003 A JP 60015003A JP 1500385 A JP1500385 A JP 1500385A JP H0617956 B2 JPH0617956 B2 JP H0617956B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- liquid crystal
- thin film
- manufacturing
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010408 film Substances 0.000 claims description 59
- 239000010409 thin film Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000007261 regionalization Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は液晶と液晶駆動用電極の間に、各画素に液晶
と直列に非化学量論比からなるシリコン酸化膜またはシ
リコン窒化膜を形成したドツトマトリクス液晶表示装置
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention forms a silicon oxide film or a silicon nitride film having a non-stoichiometric ratio in series with a liquid crystal in each pixel between a liquid crystal and a liquid crystal driving electrode. The present invention relates to a method of manufacturing a dot matrix liquid crystal display device.
（発明の概要） この発明は、液晶と液晶駆動用電極の各画素ごとに液晶
と直列に非線形抵抗素子を接線したドツトマトリクス液
晶表示装置の製造方法において、非線形抵抗素子とし
て、シリコン酸化膜またはシリコン窒化膜であり、原子
組成比Ｏ／Ｓｉ＝ｘ，Ｎ／Ｓｉ＝ｙが、それぞれ０．１
≦ｘ≦１．９，０．１≦ｙ≦１．３でありかつ水素を含
有する薄膜を使用するものであり、製造工程中のフオト
パターン形成回数が２回であり、パターン合せ精度を大
巾に緩和し、製造コストを下げるようにした。(Summary of the Invention) The present invention relates to a method of manufacturing a dot matrix liquid crystal display device in which a non-linear resistance element is tangentially connected in series to the liquid crystal for each pixel of a liquid crystal and a liquid crystal driving electrode. It is a nitride film, and the atomic composition ratios O / Si = x and N / Si = y are each 0.1
≦ x ≦ 1.9, 0.1 ≦ y ≦ 1.3, and using a hydrogen-containing thin film, the number of times the photo pattern is formed in the manufacturing process is 2, and the pattern alignment accuracy is high. The width is relaxed to reduce the manufacturing cost.
（従来技術） 小型、軽量、低消費電力の表示装置として液晶表示装置
が実用化されてきた。近年この表示装置の表示情報量増
大化を計る目的で、金属−絶縁膜−金属からなる非線形
抵抗素子を用いたもの、また非線形素子としてＺｎＯバ
リスターを用いた、液晶表示装置などが知られている。
第２図は従来から知られたＴａ２Ｏ５を絶縁膜として用
いたＭＩＭ型液晶表示装置の製造方法を示す縦断面図で
あり、簡単化するために一画素のＭＩＭについて示す。
第２図(a)は基板２１上に金属Ｔａ22のパターン形成し
た図、第２図(b)は前記Ｔａを陽極酸化処理を行い、Ｔ
ａ２Ｏ５薄膜23を形成した状態、第２図(c)は、前記Ｔ
ａ２Ｏ５上に金属薄膜24を形成しパターニングをした
図、第２図(d)はＩＴＯなどからなる透明導電膜25を形
成し画素電極としてパターンを形成した状態を示す基板
断面図をそれぞれ示す。(Prior Art) A liquid crystal display device has been put into practical use as a small, lightweight, and low power consumption display device. In recent years, a liquid crystal display device using a non-linear resistance element made of a metal-insulating film-metal, and a ZnO varistor as a non-linear element has been known for the purpose of increasing the amount of display information of this display device. There is.
FIG. 2 is a vertical cross-sectional view showing a method of manufacturing a conventionally known MIM type liquid crystal display device using Ta 2 O 5 as an insulating film, and for simplification, an MIM of one pixel is shown.
FIG. 2 (a) is a diagram in which a pattern of metal Ta22 is formed on the substrate 21, and FIG.
The state in which the a 2 O 5 thin film 23 is formed is shown in FIG.
FIG. 2 (d) is a cross-sectional view of a substrate showing a state in which a metal thin film 24 is formed on a 2 O 5 and patterned, and FIG. 2 (d) shows a state in which a transparent conductive film 25 made of ITO or the like is formed and a pattern is formed as a pixel electrode. Show.
（発明が解決しようとする問題点） 第２図で示した従来から知られたＭＩＭ型非線形抵抗素
子の形成方法によれば、使用マスク数が少なくとも３枚
以上必要であること、また第１のＴａ電極22に対する第
２の金属電極24およびＩＴＯの画素電極形成時における
パターン合せが必要であり、その精度は少なくとも５０
μｍ以下とする必要がある。このことは、表示画面が大
きくなる程コスト高、製造歩留り低下をきたす大きな原
因となる。また、絶縁膜を流れる非線形電流は、トンネ
ル電流またはポールフレンケル電流であるために、絶縁
膜の膜厚を１００Å〜４００Åと極めて薄く形成する必
要があり、電流密度が大きく電子のエネルギーは５×１
０８Ｖ以上となる。そのために絶縁破戒が起きやすく
寿命が短いという欠点がある。また、絶縁膜厚が薄いた
め、液晶配向膜のラビング処理による絶縁破戒、これに
よる製造歩留りの低下が問題となる。(Problems to be Solved by the Invention) According to the conventionally known method of forming a MIM type non-linear resistance element shown in FIG. 2, the number of used masks is required to be at least three or more, and It is necessary to align the pattern of the second metal electrode 24 and the ITO electrode with respect to the Ta electrode 22 when the pixel electrode is formed, and the accuracy is at least 50.
It is necessary to make it less than μm. This is a major cause of higher cost and lower manufacturing yield as the display screen becomes larger. Further, since the non-linear current flowing through the insulating film is a tunnel current or a pole-Frenkel current, it is necessary to form the insulating film with a very thin film thickness of 100Å to 400Å, and the current density is large and the electron energy is 5 × 1.
0 the 8 V or more. For this reason, there is a disadvantage that insulation breakage easily occurs and the life is short. Further, since the insulating film is thin, there is a problem that the liquid crystal alignment film is rubbed and the insulation is broken and the manufacturing yield is reduced.
（問題点を解決するための手段） 本発明は上記問題点を解決するために、第１の導体薄膜
の形成、パターニング後に、非化学量論的組成を有する
シリコン酸化膜または非化学量論的組成を有するシリコ
ン窒化膜（ＳＣＩ膜と記す、Semi−（Onductive−Insul
atov）を形成し、次に第２の導体薄膜を形成し、パター
ニングを行い、さらに、画素領域に相当する部分のシリ
コン酸化膜またはシリコン窒化膜をエッチング除去する
ことにある。(Means for Solving the Problems) In order to solve the above problems, the present invention provides a silicon oxide film having a non-stoichiometric composition or a non-stoichiometric film after formation and patterning of a first conductor thin film. Silicon nitride film having a composition (referred to as SCI film, Semi- (Onductive-Insul
atov), then a second conductor thin film is formed, patterning is performed, and the silicon oxide film or the silicon nitride film in the portion corresponding to the pixel region is removed by etching.
（作用） 本発明による液晶表示装置の製造方法は、ＳＣＩ膜を５
００Å形成する。ＳＣＩ膜は組成比もおよびｙを適切に
設定することにより、透明または不透明に作成すること
ができる。そのため、パターン形成回数を２回とするこ
とができる。各パターン形成時のマスク合せ精度は４０
０μｍから１０００μｍ程度であり、従来例と比較し合
せ精度を極めて粗くすることができる。ＳＣＩ膜に印加
される電界強度は２〜３MV／cm程度であり、くり返し寿
命においては1010回以上を有する。ＳＣＩ膜の膜厚が従
来例と比較し２〜４倍厚く形成するために、液晶配向処
理時のラビング工程におけるブレークダウンがほとんど
問題とならない。以上まとめると、ＳＣＩ膜を使用する
ことにより、パターン合せ精度が大巾に緩和され製造工
程数が減少減少し、大巾なコストダウンが期待できると
同時に、極めて信頼性の高い液晶表示装置の製造方法を
提供するものである。(Operation) In the method of manufacturing a liquid crystal display device according to the present invention, the SCI film is
00Å Form. The SCI film can be made transparent or opaque by appropriately setting the composition ratio and y. Therefore, the pattern can be formed twice. The mask alignment accuracy when forming each pattern is 40
It is about 0 μm to 1000 μm, and the matching accuracy can be made extremely rough as compared with the conventional example. The electric field strength applied to the SCI film is about 2 to 3 MV / cm, and the repeated life is 10 10 times or more. Since the SCI film is formed to be 2 to 4 times thicker than the conventional example, the breakdown in the rubbing step during the liquid crystal alignment treatment hardly poses a problem. In summary, by using the SCI film, the pattern alignment accuracy is greatly relaxed, the number of manufacturing steps is reduced and reduced, and a large cost reduction can be expected, and at the same time, an extremely reliable liquid crystal display device is manufactured. It provides a method.
（実施例） 第１図は本発明による液晶表示装置の製造方法を示す一
実施例を示し、説明を簡単化するために１画素について
の縦断面構造によつて工程順に説明する。(Embodiment) FIG. 1 shows an embodiment showing a method for manufacturing a liquid crystal display device according to the present invention, and in order to simplify the explanation, the explanation will be given in order of steps by the vertical sectional structure of one pixel.
第１図(a)は絶縁基板１上に第１導体薄膜２を形成した
断面図であり、絶縁基板としてガラスを使用し、導体膜
として透明導電膜ＩＴＯをスパッタ法により厚さ約５０
０Åに形成した。FIG. 1 (a) is a cross-sectional view in which the first conductor thin film 2 is formed on the insulating substrate 1, glass is used as the insulating substrate, and the transparent conductive film ITO is formed as the conductor film to a thickness of about 50 by a sputtering method.
Formed to 0Å.
なお、絶縁基板としては、ガラスの他、石英、セラミッ
クス板などが使用できる。As the insulating substrate, quartz, a ceramic plate, etc. can be used in addition to glass.
第１図(b)は、前記絶縁基板１上に第１導体薄膜ＩＴＯ
膜を画素電極としてパターニングした縦断面図である。
電極パターンは約１０００μｍ口の面積を有し、電極間
Ｇapは２０μｍ以上とした。FIG. 1 (b) shows the first conductive thin film ITO on the insulating substrate 1.
It is a longitudinal cross-sectional view in which a film is patterned as a pixel electrode.
Electrode pattern has an area of about 1000μm port, the inter-electrode G ap was above 20 [mu] m.
パターン形成は、フォトエッチングの他に高分子樹脂の
印刷によってもよい。The pattern formation may be performed by printing a polymer resin in addition to photoetching.
次に第１図(c)は、ＳＩＣ膜３、導体薄膜４を形成した
縦断面図である。ＳＣＩ膜３はプラズマＣＶＤ法によっ
て、シランガスと酸化窒素ガスまたは亞酸化窒素ガスの
適切な混合ガスにより形成された約１０００ÅのＳｉＯ
ｘ膜である。ＳｉＯｘ膜は、通常透明であるが、膜中の
シリコン原子が多い場合は不透明となるが、本実施例に
おいては、不透明膜であっても表示品質には何ら影響を
与えるものではない。Next, FIG. 1 (c) is a vertical sectional view in which the SIC film 3 and the conductor thin film 4 are formed. The SCI film 3 is formed by a plasma CVD method using a suitable mixed gas of silane gas and nitric oxide gas or nitric oxide gas, and the SiO2 film has a thickness of about 1000Å.
x film. The SiO x film is usually transparent, but becomes opaque when the number of silicon atoms in the film is large. However, in this embodiment, the opaque film does not affect the display quality at all.
第１図(d)は、第２の導体薄膜４、および、ＳＣＩ膜３
を連続的にパターン形成したときの縦断面図である。パ
ターン形成方法は、通常のフォトエッチング法で行っ
た。すなわち、レジストを塗布乾燥し、マスクを使用し
露光現像乾燥し、次にＡｕ、および、Ｃｒを湿式法によ
りエッチングした。次に、ＳＣＩ膜３をＣＦ４と酸素を
混合したガスによりドライエッチを行った。FIG. 1 (d) shows the second conductor thin film 4 and the SCI film 3.
FIG. 6 is a vertical cross-sectional view when a pattern is continuously formed. The pattern formation method was a normal photo-etching method. That is, the resist was applied and dried, exposed and developed and dried using a mask, and then Au and Cr were etched by a wet method. Next, the SCI film 3 was dry-etched with a gas containing CF 4 and oxygen.
第２電極４は、画素電極である第１電極２上のどの部分
であってもよく、そのためマスク合わせ精度は約１００
０μｍ程度でよい。The second electrode 4 may be any portion on the first electrode 2, which is a pixel electrode, so that the mask alignment accuracy is about 100.
It may be about 0 μm.
第３図(a)は、本発明に使用するＳＣＩ膜の赤外線吸収
特性を示すグラフであり、第３図(b)の５は波数２１０
０ｃｍ-1付近のＳｉ−Ｈボンドの吸収ピーク、第３図
(a)の６は波数９００〜１１００ｃｍ-1付近のＳｉ−Ｏ
の吸収ピークを示す。ＡＥＳ分析によれば、前記ＳＣＩ
膜膜の元素組成比Ｏ／Ｓｉ≒０．５であり、しかも可視
光線領域においては透過率８０％以上を有した。第３図
(b)は、本発明に使用したＳＣＩ膜の電圧対電流特性図
を示し、極めてすぐれた対称性を示し、オペレーション
電圧ＶOPとした場合、電圧ＶOP／２に対し電流値は３ケ
タ以上低下した。FIG. 3 (a) is a graph showing the infrared absorption characteristics of the SCI film used in the present invention, and 5 in FIG. 3 (b) is wavenumber 210.
Absorption peak of Si-H bond near 0 cm -1 , Fig. 3
6 in (a) is Si-O near the wave number 900-1100 cm -1
The absorption peak of is shown. According to AES analysis, the SCI
The elemental composition ratio of the film was O / Si≈0.5, and the transmittance was 80% or more in the visible light region. Fig. 3
(b) shows a voltage-current characteristic diagram of the SCI film used in the present invention, showing extremely excellent symmetry, and when the operation voltage is V OP , the current value is 3 digits or more with respect to the voltage V OP / 2. Fell.
なお、本実施例においては、プラズマＣＶＤ法によって
ＳＣＩ膜を形成したが、これを常圧及び減圧ＣＶＤ法に
よって形成してもよいし、スパッター法、光ＣＶＤ法な
どによっても形成してもよい。また、本実施例において
は、ＳＣＩ膜を酸化膜としたが、これをシランガスとア
ンモニアガスまたは窒素ガスによるＳｉＮｘ膜として
も、第３図(b)に示すごとく非線形電流特性が得られ
た。Although the SCI film is formed by the plasma CVD method in this embodiment, it may be formed by the atmospheric pressure and low pressure CVD method, or may be formed by the sputtering method, the photo CVD method or the like. Further, in this embodiment, the SCI film is an oxide film, but a non-linear current characteristic is obtained as shown in FIG. 3 (b) even when the SCI film is a SiNx film made of silane gas and ammonia gas or nitrogen gas.
（発明の効果） 以上述べたように、本発明による液晶表示装置の製造方
法によれば、第１の導電薄膜と第２の導電薄膜との間
に、非化学量論比のシリコン酸化膜またはシリコン窒化
膜からなるＳＣＩ膜を膜厚５００Å以上に形成すること
により、パターン形成時のマスク合わせ精度が１０００
μｍ程度と極めて粗くすることができた。(Effects of the Invention) As described above, according to the method for manufacturing a liquid crystal display device of the present invention, a silicon oxide film having a non-stoichiometric ratio is formed between the first conductive thin film and the second conductive thin film. By forming the SCI film made of a silicon nitride film to a film thickness of 500 Å or more, the mask alignment accuracy during pattern formation is 1000
It was possible to make it extremely rough with about μm.
また、工程数の減少、マスク合わせ精度の大幅緩和によ
る大幅なコストダウンが実現できた。また、非線形抵抗
機能を有するＳＣＩ膜を５００Å以上と厚く作成するこ
とができるため、液晶配向膜作成時のラビング処理のブ
レークダウンが殆んどなく、信頼性の高い表示装置を提
供できるものである。In addition, the number of processes has been reduced and the mask alignment accuracy has been greatly eased, resulting in a significant cost reduction. Further, since the SCI film having the non-linear resistance function can be formed as thick as 500 Å or more, there is almost no breakdown in the rubbing process when the liquid crystal alignment film is formed, and a highly reliable display device can be provided. .
さらに、本発明の製造方法により形成された画素電極
は、基板上に形成された導体薄膜のみからなるため、透
過光量の大きな表示装置を提供できる。Further, since the pixel electrode formed by the manufacturing method of the present invention is composed only of the conductive thin film formed on the substrate, it is possible to provide a display device having a large amount of transmitted light.
第１図(a)〜(d)は、本発明による液晶表示装置の製造方
法の実施例を、工程順に示した断面図、第２図(a)〜(d)
は、従来のＴａの陽極酸化法によりＭＩＭ形素子による
製造方法を工程順に示した断面図、第３図(a)は、本発
明に使用するＳＣＩ膜の赤外線吸収特性を示すグラフ、
第３図(b)は、本発明の製造方法によるＳＣＩ膜の電圧
対電流特性を示すグラフを示している。 符号の説明 絶縁基板……１，２１ 第１導体薄膜……２ 第２導体薄膜……４ ＳＣＩ膜……３ 陽極酸化膜……２３ 金属電極……２４ 透明導電膜……２５1 (a) to 1 (d) are sectional views showing an embodiment of a method for manufacturing a liquid crystal display device according to the present invention in the order of steps, and FIGS. 2 (a) to 2 (d).
FIG. 3A is a cross-sectional view showing a method of manufacturing a MIM type element by a conventional Ta anodic oxidation method in the order of steps. FIG. 3A is a graph showing infrared absorption characteristics of an SCI film used in the present invention.
FIG. 3 (b) is a graph showing voltage-current characteristics of the SCI film according to the manufacturing method of the present invention. Explanation of symbols Insulating substrate …… 1, 21 First conductor thin film …… 2 Second conductor thin film …… 4 SCI film …… 3 Anodized film …… 23 Metal electrode …… 24 Transparent conductive film …… 25
Claims (2)
た液晶層などからなる液晶表示装置の製造方法におい
て、 一方の基板上に第１の導体薄膜を形成し、次に所定の形
状に第１の導体薄膜をパターニングして画素電極を形成
する工程と、 前記パターンを形成した基板上にシリコン酸化膜ＳｉＯ
ｘまたはシリコン窒化膜ＳｉＮｙであり、原子組成比Ｏ
／Ｓｉ＝ｘ、Ｎ／Ｓｉ＝ｙがそれぞれ０．１≦ｘ≦１．
９、０．１≦ｙ≦１．３である薄膜を形成する工程と、 前記シリコン酸化膜ＳｉＯｘまたはシリコン窒化膜Ｓｉ
Ｎｙ上に第２の導体薄膜を形成し所定の形状に第２の導
体薄膜をパターニングする工程と、 前記画素電極の領域の前記シリコン酸化膜ＳｉＯｘまた
はシリコン窒化膜ＳｉＮｙをエッチング除去する工程と
を含むことを特徴とする液晶表示装置の製造方法。1. A method of manufacturing a liquid crystal display device comprising two opposed substrates and a liquid crystal layer sandwiched between the substrates, wherein a first conductive thin film is formed on one of the substrates, and then a predetermined thin film is formed. Patterning the first conductive thin film into a shape to form a pixel electrode, and a silicon oxide film SiO on the substrate on which the pattern is formed.
x or a silicon nitride film SiN y , with an atomic composition ratio O
/ Si = x and N / Si = y are 0.1 ≦ x ≦ 1.
9, a step of forming a thin film of 0.1 ≦ y ≦ 1.3, and the silicon oxide film SiO x or silicon nitride film Si
Forming a second conductor thin film on N y and patterning the second conductor thin film into a predetermined shape; etching the silicon oxide film SiO x or silicon nitride film SiN y in the region of the pixel electrode; A method for manufacturing a liquid crystal display device, comprising:
酸化膜ＳｉＯｘまたはシリコン窒化膜ＳｉＮｙであり、
原子組成比Ｏ／Ｓｉ＝ｘ、Ｎ／Ｓｉ＝ｙがそれぞれ０．
１≦ｘ≦１．９、０．１≦ｙ≦１．３である薄膜を形成
する工程において、 前記薄膜の中に水素を含有させることを特徴とする特許
請求の範囲第１項記載の液晶表示装置の製造方法。2. A silicon oxide film SiO x or a silicon nitride film SiN y is formed on the patterned substrate.
The atomic composition ratios O / Si = x and N / Si = y are 0.
The liquid crystal according to claim 1, wherein hydrogen is contained in the thin film in the step of forming the thin film in which 1 ≦ x ≦ 1.9 and 0.1 ≦ y ≦ 1.3. Manufacturing method of display device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60015003A JPH0617956B2 (en) | 1985-01-29 | 1985-01-29 | Liquid crystal display manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60015003A JPH0617956B2 (en) | 1985-01-29 | 1985-01-29 | Liquid crystal display manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61174509A JPS61174509A (en) | 1986-08-06 |
| JPH0617956B2 true JPH0617956B2 (en) | 1994-03-09 |
Family
ID=11876721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60015003A Expired - Lifetime JPH0617956B2 (en) | 1985-01-29 | 1985-01-29 | Liquid crystal display manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0617956B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2695635B2 (en) * | 1987-04-10 | 1998-01-14 | シチズン時計株式会社 | Liquid crystal display |
| JPH02162327A (en) * | 1988-12-16 | 1990-06-21 | Toshiba Corp | Matrix array substrate |
| GB9206086D0 (en) * | 1992-03-20 | 1992-05-06 | Philips Electronics Uk Ltd | Manufacturing electronic devices comprising,e.g.tfts and mims |
| WO2010004675A1 (en) | 2008-07-11 | 2010-01-14 | パナソニック株式会社 | Current reduction element, memory element, and methods for manufacture of the elements |
| US8355274B2 (en) | 2008-09-19 | 2013-01-15 | Panasonic Corporation | Current steering element, storage element, storage device, and method for manufacturing current steering element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57197592A (en) * | 1981-05-29 | 1982-12-03 | Suwa Seikosha Kk | Liquid crystal display unit |
| JPS6194086A (en) * | 1984-10-16 | 1986-05-12 | セイコーインスツルメンツ株式会社 | Liquid crystal display unit |
-
1985
- 1985-01-29 JP JP60015003A patent/JPH0617956B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61174509A (en) | 1986-08-06 |
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