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JPH06168928A - Wafer cleaning device and cleaning of wafer - Google Patents

Wafer cleaning device and cleaning of wafer

Info

Publication number
JPH06168928A
JPH06168928A JP31977492A JP31977492A JPH06168928A JP H06168928 A JPH06168928 A JP H06168928A JP 31977492 A JP31977492 A JP 31977492A JP 31977492 A JP31977492 A JP 31977492A JP H06168928 A JPH06168928 A JP H06168928A
Authority
JP
Japan
Prior art keywords
wafer
cleaning
output
carrier
bath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31977492A
Other languages
Japanese (ja)
Inventor
Hiroyuki Kawakami
裕之 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP31977492A priority Critical patent/JPH06168928A/en
Publication of JPH06168928A publication Critical patent/JPH06168928A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

PURPOSE:To prevent particles from adhering again to a wafer at the time of carrying-out of a carrier by a method wherein a mechanism for changing the output of an ultrasonic wave during the time when the carrier having the wafer therein is in the inner bath of a cleaning device is added to the cleaning device. CONSTITUTION:A cleaning bath inner bath 1 is always filled with a cleaning liquid and is in a state that it is overflowed. The cleaning fluid, which enters a cleaning bath outer bath 2 by the overflow, is made to pass through a filter 4 by a circulating pump 3, particles are removed and the cleaning liquid is returned to the inner bath 1. When a carrier 6 having a wafer 7 therein is transferred to the inner bath 1, an ultrasonic oscillator 5 is operated, the output of the oscillator is adjusted sequentially and the output is changed. When the carrier 6 is carried out, the oscillator 5 is stopped. Accordingly, the particles, which have been trapped by ultrasonic waves in a low-output time zone, are discharged outside the inner tank 1 by the overflow and can be prevented from readhering to the wafer.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は半導体製造に多く用い
られているウェーハ洗浄装置の構造およびウェーハ洗浄
の方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a wafer cleaning apparatus and a method of cleaning a wafer which are widely used in semiconductor manufacturing.

【0002】[0002]

【従来の技術】従来のウェーハ洗浄装置では、洗浄槽内
にウェーハが搬入されると超音波発振器が動作し、超音
波の振動によりウェーハに付着したパーティクルを除去
し、ウェーハが搬出されると、超音波発振器が停止する
構造であった。
2. Description of the Related Art In a conventional wafer cleaning apparatus, an ultrasonic oscillator operates when a wafer is loaded into a cleaning tank, removes particles adhering to the wafer by vibration of ultrasonic waves, and the wafer is unloaded. The structure was such that the ultrasonic oscillator stopped.

【0003】図3に従来のウェーハ洗浄装置の断面構
造、図4に洗浄中の超音波の出力を示す。洗浄槽内槽1
は常に洗浄液でみたされており、オーバーフロー状態に
ある。オーバーフローにより洗浄槽外槽2に入った洗浄
液は、循環ポンプ3によりフィルター4を通りパーティ
クルを除去され、洗浄槽内槽1に戻る。ウェーハ7の入
ったキャリア6が洗浄槽内槽1に搬送されると、超音波
発振器5が動作し、キャリア6が搬出されると、超音波
発振器5が停止する。図4に示すようにこの間の超音波
の出力は一定であった。
FIG. 3 shows a sectional structure of a conventional wafer cleaning apparatus, and FIG. 4 shows an output of ultrasonic waves during cleaning. Cleaning tank inner tank 1
Is always filled with cleaning solution and is in an overflow condition. The cleaning liquid that has entered the cleaning tank outer tank 2 due to the overflow passes through the filter 4 by the circulation pump 3 to remove particles, and returns to the cleaning tank inner tank 1. When the carrier 6 containing the wafer 7 is transferred to the cleaning tank inner tank 1, the ultrasonic oscillator 5 operates, and when the carrier 6 is unloaded, the ultrasonic oscillator 5 stops. As shown in FIG. 4, the output of ultrasonic waves during this period was constant.

【0004】[0004]

【発明が解決しようとする課題】ところで上記のウェー
ハ洗浄装置では超音波により、ウェーハより除去された
パーティクルが洗浄槽内槽に一定の洗浄液の流れがある
にもかかわらず、超音波により内槽内にトラップされて
おり、キャリア搬出時にウェーハに再付着するという欠
点があった。
By the way, in the above-mentioned wafer cleaning apparatus, even though the particles removed from the wafer by ultrasonic waves have a constant flow of the cleaning liquid in the inner tank of the cleaning tank, the inner tank is cleaned by ultrasonic waves. However, there is a drawback that it is reattached to the wafer when the carrier is carried out.

【0005】[0005]

【課題を解決するための手段】この発明のウェーハ洗浄
装置は上記問題を解決するためにウェーハの入ったキャ
リア洗浄装置内槽内にある間の超音波出力を変化させる
機構を付加することを特徴とするものである。
In order to solve the above-mentioned problems, the wafer cleaning apparatus of the present invention is characterized by adding a mechanism for changing the ultrasonic output while the wafer is in the inner tank of the carrier cleaning apparatus. It is what

【0006】また、この発明の洗浄方法は、ウェーハの
入ったキャリアが洗浄槽内にある間の超音波の出力を変
化させることにより、洗浄槽内槽内の洗浄液中のパーテ
ィくるを除去することを特徴とする。
The cleaning method of the present invention removes particles from the cleaning liquid in the inner tank of the cleaning tank by changing the output of ultrasonic waves while the carrier containing the wafer is in the cleaning tank. Is characterized by.

【0007】[0007]

【作用】上記の構成によると、ウェーハから除去され、
超音波により洗浄液中にトラップされているパーティク
ルは、超音波出力を低下させた時に洗浄槽内槽のオーバ
ーフローにより、洗浄槽内槽から除去される。また、超
音波出力の変化回数を多くすれば洗浄液中のパーティク
ル数はさらに低減される。このためキャリア搬出時に再
度ウェーハに付着することが防止できる。
According to the above structure, the wafer is removed from the wafer,
The particles trapped in the cleaning liquid by the ultrasonic waves are removed from the cleaning tank inner tank by overflow of the cleaning tank inner tank when the ultrasonic output is reduced. Further, the number of particles in the cleaning liquid can be further reduced by increasing the number of changes in ultrasonic output. Therefore, it is possible to prevent the carrier from being attached again when the carrier is carried out.

【0008】[0008]

【実施例】図1はこの発明の一実施例のウェーハ洗浄装
置の断面図、図2はウェーハの入ったキャリアが洗浄槽
内槽にある間の超音波出力を示す。図においてシーケン
サ8を接続したほかは図3と同様であるので同一部分に
は同一符号を付してその説明を省略する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a sectional view of a wafer cleaning apparatus according to an embodiment of the present invention, and FIG. 3 is the same as that of FIG. 3 except that the sequencer 8 is connected, and therefore, the same portions are denoted by the same reference numerals and the description thereof is omitted.

【0009】上記の構成にし、図2に示すようにウェー
ハの入ったキャリアが洗浄槽内槽内にある間の超音波の
出力を変化させる。出力の低い時間帯では超音波により
トラップされていたパーティクルがオーバーフローによ
り洗浄槽内槽外に排出される。これにより、洗浄槽内槽
内のパーティクル数は低減でき、ウェーハに再付着する
パーティクルが低減できる。
With the above structure, as shown in FIG. 2, the ultrasonic wave output is changed while the carrier containing the wafer is in the cleaning tank. Particles trapped by ultrasonic waves during the low output time period are discharged to the outside of the cleaning tank by overflow. As a result, the number of particles in the cleaning tank can be reduced, and the number of particles redeposited on the wafer can be reduced.

【0010】超音波の出力は、本例のように断続的に変
化しても良いし、連続的に変化するものでもよい。
The output of ultrasonic waves may change intermittently as in this example, or may change continuously.

【0011】[0011]

【発明の効果】以上説明したように、超音波発振器にシ
ーケンサを接続し、ウェーハの入ったキャリアが洗浄槽
内槽内のパーティクル数が低減でき、ウェーハに再付着
するパーティクルが低減できる。
As described above, the sequencer is connected to the ultrasonic oscillator, and the carrier containing the wafer can reduce the number of particles in the tank in the cleaning tank, and the particles reattached to the wafer can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】 この発明の一実施例の超音波出力変化機構を
採用したウェーハ洗浄装置の断面構造図。
FIG. 1 is a cross-sectional structural view of a wafer cleaning apparatus that employs an ultrasonic output changing mechanism according to an embodiment of the present invention.

【図2】 この発明の一実施例の超音波出力変化機構を
採用したウェーハ洗浄装置の超音波出力図。
FIG. 2 is an ultrasonic output diagram of a wafer cleaning apparatus that employs an ultrasonic output changing mechanism according to an embodiment of the present invention.

【図3】 従来のウェーハ洗浄装置の断面構造図。FIG. 3 is a sectional structural view of a conventional wafer cleaning apparatus.

【図4】 従来のウェーハ洗浄装置の超音波出力図。FIG. 4 is an ultrasonic output diagram of a conventional wafer cleaning apparatus.

【符号の説明】[Explanation of symbols]

1 洗浄槽内槽 2 洗浄槽外槽 3 循環ポンプ 4 フィルター 5 超音波発振器 6 キャリア 7 ウェーハ 8 シーケンサ 1 Cleaning tank inner tank 2 Cleaning tank outer tank 3 Circulation pump 4 Filter 5 Ultrasonic oscillator 6 Carrier 7 Wafer 8 Sequencer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】ウェーハの洗浄装置において、洗浄に用い
る超音波発振器の出力をシーケンシャルに調整する出力
調整手段を配したことを特徴とするウェーハ洗浄装置。
1. A wafer cleaning apparatus, wherein the wafer cleaning apparatus is provided with output adjusting means for sequentially adjusting the output of an ultrasonic oscillator used for cleaning.
【請求項2】洗浄に用いる超音波発振器の出力を洗浄途
中に切り換えることを特徴とするウェーハ洗浄装置。
2. A wafer cleaning apparatus characterized in that the output of an ultrasonic oscillator used for cleaning is switched during cleaning.
【請求項3】洗浄中に超音波の出力を断続的に適用する
ことを特徴するウェーハ洗浄方法。
3. A method for cleaning a wafer, which comprises applying ultrasonic output intermittently during cleaning.
JP31977492A 1992-11-30 1992-11-30 Wafer cleaning device and cleaning of wafer Pending JPH06168928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31977492A JPH06168928A (en) 1992-11-30 1992-11-30 Wafer cleaning device and cleaning of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31977492A JPH06168928A (en) 1992-11-30 1992-11-30 Wafer cleaning device and cleaning of wafer

Publications (1)

Publication Number Publication Date
JPH06168928A true JPH06168928A (en) 1994-06-14

Family

ID=18114035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31977492A Pending JPH06168928A (en) 1992-11-30 1992-11-30 Wafer cleaning device and cleaning of wafer

Country Status (1)

Country Link
JP (1) JPH06168928A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337030B1 (en) 1997-02-04 2002-01-08 Canon Kabushiki Kaisha Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method
US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
CN101890413A (en) * 2009-05-18 2010-11-24 鸿富锦精密工业(深圳)有限公司 A device for washing and drying materials
WO2011089673A1 (en) * 2010-01-25 2011-07-28 信越半導体株式会社 Ultrasonic cleaning method
CN108080336A (en) * 2017-11-17 2018-05-29 杭州医学院 A kind of separation cleaning device for being used for film class plastics and fabric

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6337030B1 (en) 1997-02-04 2002-01-08 Canon Kabushiki Kaisha Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method
US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
CN101890413A (en) * 2009-05-18 2010-11-24 鸿富锦精密工业(深圳)有限公司 A device for washing and drying materials
WO2011089673A1 (en) * 2010-01-25 2011-07-28 信越半導体株式会社 Ultrasonic cleaning method
CN108080336A (en) * 2017-11-17 2018-05-29 杭州医学院 A kind of separation cleaning device for being used for film class plastics and fabric

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