JPH06167443A - Measuring apparatus utilizing surface plasmon resonance - Google Patents

Abstract

(57) [Summary] [Object] To provide a measuring apparatus using surface plasmon resonance, which can measure a state change of a sample with respect to a stimulus in the measuring apparatus using surface plasmon resonance. [Structure] Surface plasmon microscope (2,21) and chemical / biosensor (41,42,51,52,53), or surface plasmon microscope and chemical / biosensor and external stimulator (3,31,32,11)
1) and / or other measuring means (61,71,81,91,101),
Or surface plasmon microscope and external stimulation means and /
Alternatively, another measuring means is provided to measure and analyze the sample.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a measuring apparatus utilizing surface plasmon resonance for measuring information near the surface of a dielectric substance and film thickness distribution of a dielectric thin film with high sensitivity.

[0002]

2. Description of the Related Art In recent years, several microscopes utilizing surface plasmon resonance have been developed to measure the information near the surface of a dielectric substance and the film thickness distribution of a dielectric thin film with high sensitivity. For example, `` Thin Solid Films, 187, (1990) 349-3
56 ”is a sample of Langmuir-Blodgett film (LB) film, which induces surface plasmon resonance by parallel light,
It is reported that the intensity distribution of the reflected light was detected and the film thickness distribution of the LB film was observed. Also, `` Optics, 19, (1990)
682-686 ", a surface plasmon is induced by converging light using an onion as a sample, and the angular distribution of the reflected light intensity is obtained using a one-dimensional image sensor, and the sample is two-dimensionally scanned by an XY stage. However, it is reported that the onion epidermal cells were observed as a pseudo-color image by mapping the angular distribution by color.

On the other hand, the surface plasmon resonance has a high sensitivity to the dielectric and geometrical changes of the boundary, and therefore, it was applied to a chemical / biosensor for detecting the reaction or concentration of a substance on the surface. Research is actively carried out. For example, "Journal of the Institute of Electronics, Information and Communication Engineers, J74-C-2,5, (1991) 443-4
49 ”, a biosensor that measures an antigen-antibody reaction by detecting the resonance angle of surface plasmons using a substance exhibiting an immune reaction is reported. Further, the present applicants have also proposed in Japanese Patent Application No. 3-195052, an ion sensor for measuring the ion concentration by detecting the resonance angle of the surface plasmon using an LB film exhibiting ion sensitivity. .

[0004]

A microscope utilizing surface plasmon resonance is capable of observing with high sensitivity the state of a biological membrane, a pseudo-biological membrane such as a synthetic bilayer membrane or an LB membrane, and a liquid crystal alignment layer. You can Many of such organic films exhibit stimulus responsiveness such as state change such as crystal-liquid crystal phase transition or phase separation due to heating, orientation change due to application of an electric field, or state change due to redox reaction.

However, the above-mentioned document "Thin Solid F
ilms, 187, (1990) 349-356 '' and `` Optics, 19, (1990) 682-
In the technique described in "686", since the sample is simply fixed to the substrate for observation, there is a problem in that the state change of the sample cannot be measured when a stimulus such as heating or an electric field is applied. is there.

Furthermore, since there is no means for detecting only the surface plasmon resonance induced on the sample surface and directly observing the sample surface, it is confirmed whether the surface plasmon resonance at the target site of the sample is accurately observed. There was a problem that I could not.

Therefore, an object of the present invention is to provide a measuring apparatus utilizing surface plasmon resonance, which is appropriately configured so that a stimulus is applied to a thin film and a state change due to the stimulus can be measured. .

[0008]

In order to achieve the above object, according to the present invention, a dielectric sample is brought into contact with one surface of a metal thin film and polarized light is polarized on the other surface of the metal thin film under the condition of total reflection. To induce surface plasmon resonance and detect the reflected light to measure the state of the dielectric sample, and a stimulus that applies a physical or chemical stimulus to the dielectric sample. And means for measuring the state change of the dielectric sample stimulated by the stimulating means by the surface plasmon measuring means.

[0009]

According to the measuring device having such a configuration, it is possible to apply a stimulus to the dielectric sample and detect a change in the state of the sample due to the stimulus.

Further, by providing an observing means for observing the surface of the dielectric sample, the change of the state of the sample at the measurement position of the sample for which the surface plasmon is being measured,
Since information other than information by surface plasmon resonance can be obtained, more accurate information of the sample can be obtained.

[0011]

1 is a sectional view showing a first embodiment of the present invention. This measuring apparatus 1 comprises a surface plasmon microscope 2 and a heater 3, and a measurement sample 4 made of a dielectric substance.
It is possible to observe the change of state with the heating of.
The surface plasmon microscope 2 is provided with a thin metal film 6 for holding the measurement sample 4 in contact with one surface of a transparent substrate 5 and an optical prism 8 on the other surface through a matching oil 7 so that a monochromatic laser light source 9 can be used as a polarizing plate. 10, P-polarized convergent light is made incident on the metal thin film 6 via the beam expander 11, the diaphragm 12, the condenser lens 13, the optical prism 8, the matching oil 7, and the transparent substrate 5, and the reflected light is reflected by the ND filter 14.
The photodiode array 16 arranged parallel to the focal plane through the cylindrical lens 15 receives the light and determines the angle dependence of the reflected light intensity.

In such a structure, even if P-polarized light is incident on the metal thin film 6 under the condition of total reflection, when the surface plasmon is induced, the reflectance is extremely reduced at the induced angle. Therefore, if the photodiode array 16 is arranged in parallel with the focal plane of the cylindrical lens 15 and each element thereof is made to correspond to the reflection angle of light, the dark line generated by the surface plasmon resonance from the output, that is, the minimum reflectance is obtained. The corresponding element can be detected, and the incident angle at which the surface plasmon resonance occurs, that is, the resonance angle can be detected by obtaining the reflection angle of the absorption peak from the element position.

The transparent substrate 5 is a pulse motor (not shown).
Two-dimensional scanning is performed by the XY stage 17. Here, when the scanning range is not so large, the problem of incident angle fluctuation is small even if the optical prism 8 is moved integrally with the transparent substrate 5, but when the scanning range is large, the incident angle is guaranteed. In addition, strictness is required in alignment accuracy between the incident surface and the optical prism 8 with respect to the XY stage 17. Therefore, in this embodiment, the prism fixing member 18 is used to fix the optical prism 8 with respect to the optical system during two-dimensional scanning, and only the transparent substrate 5 is moved. In order to smoothly perform this operation, the matching oil 7 is preferably used only in a very small part around the measuring part.

The pulse motor is controlled by a personal computer, and the angular distribution between the position information and the resonance angle is mapped by color coding and displayed as a grayscale image or a pseudo color image on a CRT (not shown). The resonance angle is
After the signal from the photodiode array 16 is A / D converted, it is taken into a personal computer and calculated.

The heater 3 is provided so as to heat the metal thin film 6 holding the measurement sample 4, and its temperature is controlled by the thermistor 19. This heater 3 is
Although any material can be used, an insulating sheet-shaped material such as a silicon rubber heater is used in this embodiment.

The metal thin film 6 is "surface" 20,6, (1982) 289-3.
As described in 04, it is desirable that Ag, Au, Cu, Zn, Al, and K whose real part of complex permittivity is negative and large, and especially Pd, Ni, Fe
Is not preferable. The metal thin film 6 may be made of an alloy composition, but when Ag is mixed with Pd,
The use of this alloy is not preferred because the surface plasmon resonance disappears. Further, the metal thin film 6 may have a multi-layer structure in which, for example, a Cr film is formed extremely thin on the surface thereof, and an Au film or the like is formed thereon, in order to improve the adhesion to the transparent substrate 5.

The monochromatic laser light source 9 may be any light source that emits randomly polarized light or linearly polarized light. If a light source that emits linearly polarized light is used, the polarizing plate 10 is omitted. May be. Also, the light source is
It is also possible to use a device that converts white light into monochromatic light with a monochromator. The diaphragm 12, the ND filter 14, and the cylindrical lens 15 can be omitted.

According to this embodiment, the surface condition of the measurement sample 4 can be observed by the surface plasmon microscope 2 while the measurement sample 4 is being heated by the heater 3.
If is a substance that exhibits a crystal-liquid crystal phase transition by heating, it is possible to observe a change in state associated with the phase transition. Also,
If the measurement sample 4 is a substance that exhibits phase separation by heating, changes in the phase separation and cluster size can be observed. Therefore, it is possible to easily observe the state change of the dielectric substance exhibiting the crystal-liquid crystal phase transition or the phase separation like the biological film or the pseudo biological film such as the synthetic bilayer film and the LB film.

FIG. 2 is a sectional view showing a second embodiment of the present invention. This measuring device 20, like the first embodiment,
The surface plasmon microscope 21 and the heater 3 are provided to enable observation of the state change associated with the heating of the measurement sample 4 made of a dielectric substance. In this embodiment, the surface plasmon microscope 21 is the same as the surface plasmon microscope 2 shown in FIG. 1 except that the condenser lens 13, the cylindrical lens 15 and the photodiode array 16 are omitted, and the CCD camera 22 is provided at the position of the photodiode array 16. Provide and configure.

In this manner, the light from the monochromatic laser light source 9 is polarized by the polarizing plate 10, the beam expander 11 and the diaphragm 1.
2, through the optical prism 8, the matching oil 7 and the transparent substrate 5 is incident on the metal thin film 6 as P-polarized parallel light to induce surface plasmon resonance, and the reflected light is passed through the ND filter 14 and parallel to its focal plane. The intensity distribution of the reflected light is detected by the CCD camera 22 arranged.

In this embodiment, since the surface state of the measurement sample 4 is directly observed by the CCD camera 22, the transparent substrate 5 is provided on the fixed stage 23 without two-dimensional scanning. The other configurations are the same as those in FIG.
Therefore, also in this embodiment, the same effect as that of the embodiment shown in FIG. 1 can be obtained.

FIG. 3 shows a third embodiment of the present invention. This measuring device 30 is the measuring device 1 shown in FIG.
In addition, the electrode 31 is provided in contact with the surface of the measurement sample 4 opposite to the transparent substrate 5, and the surface plasmon exciting metal thin film 6 is also used as a counter electrode, and a DC power supply is provided between the electrode 31 and the metal thin film 6. A DC voltage is applied from 32. The electrode 31 does not react with the measurement sample 4 when a voltage is applied, such as Pt, Au, Al,
It is composed of a thin plate such as ITO glass or a conductive thin film having a thickness of 100 Å or more formed on a glass substrate by a known method such as vapor deposition or sputtering. The heater 3 is XY
The measurement sample 4 is placed between the stage 17 and the electrode 31.
Is heated via the electrode 31, and its temperature is controlled by the thermistor 19 provided on the transparent substrate 5.

As described above, if a means for applying a voltage to the measurement sample 4 is added, the surface plasmon microscope 2 can easily change the surface state of the measurement sample 4 which causes an orientation change due to an electric field like liquid crystal. Can be observed.

FIG. 4 shows a fourth embodiment of the present invention. This measuring device 40 is the measuring device 3 shown in FIG.
0, the cell frame 41 is provided between the metal thin film 6 and the electrode 31.
Is provided to form a cell 42, and the supporting electrolyte solution can be held in the cell 42. The electrode 31 in this case is one that does not react with the components in the measurement sample 4 or the supporting electrolyte when a voltage is applied, such as Pt, Au, I.
It is composed of a thin plate such as TO glass or a conductive thin film having a thickness of 100 Å or more formed on a glass substrate by a known method such as vapor deposition or sputtering.

According to this embodiment, when the measurement sample 4 is an organic thin film having a ferrocene group or a viologen group, an oxidizing agent is added to the supporting electrolyte solution in the cell 42 and the DC power source 32 is added.
By sweeping the applied voltage by, the state change of the phase change accompanying the redox of the measurement sample 4 can be easily observed by the surface plasmon microscope 2.

FIG. 5 shows a fifth embodiment of the present invention. This measuring device 50 is the same as the measuring device 4 shown in FIG.
0, the cell frame 41 has an injection pipe 51 and an exhaust pipe 52.
Is provided, the cell 42 has a flow cell structure, and a functional thin film that interacts with a specific component of gas or liquid is used instead of the measurement sample 4. In this example, as a functional thin film, a thin film dielectric material 53 having a substance sensing function composed of an ion sensitive film or an immunoreactive film sensitive to a specific substance is provided, and a specific ion concentration of the liquid flown in the flow cell is provided. Alternatively, a chemical / biosensor function for measuring an immunological substance by detecting the resonance angle of the surface plasmon with the surface plasmon microscope 2 is added.

The functional thin film is a thin film that causes a physical, chemical or electrochemical action on a specific atom or molecule, and a specific example is a film which is sensitive to a specific ion. Those that show an immune reaction to a specific antibody or antigen,
For example, there are those that show an enzymatic reaction with a specific substrate.

Regarding the sensor using the surface plasmon resonance, the above-mentioned "Japanese Patent Application No. 3-195052" and "Journal of the Institute of Electronics, Information and Communication Engineers, J74-C-2,5, (1991) 443-449".
Have been proposed as a new type of sensor. However, in a sensor using surface plasmon resonance, the surface state of the sensitive film has a great influence on the detected result.Therefore, in order to perform accurate sensing, before and after the measurement as a sensor, It is necessary to observe the state of each sensitive film.

According to this embodiment, since the surface plasmon microscope is provided with the chemical / biosensor function as described above, the surface of the dielectric substance 53 as a sensitive film is measured before and after measurement as a sensor. The condition can be measured with a single measuring device 50. Therefore, it is extremely effective in carrying out the research and development of the sensor.

In this embodiment, the electrode 31 is not used when it is used in an immunosensor or the like, but it may be necessary in a sensor that applies a redox reaction. Similar to the above, the electrode 31 does not react with the dielectric substance 53 or components in the electrolyte solution when a voltage is applied, for example, a thin plate of Pt, Au, ITO glass or the like, or a known vapor deposition or sputtering method on a glass substrate. 100 Å formed by the method
It is configured by the above-mentioned conductive thin film and the like. Further, the voltage application and the sweep are performed using a potentiostat, a galvanostat, or the like.

FIG. 6 shows a sixth embodiment of the present invention. This measuring device 60 is provided with the surface plasmon microscope 2 and the infrared spectrophotometer 61 shown in FIG. 1 to observe the surface state of the measurement sample 4 and at the same time analyze the infrared absorption spectrum of the measurement sample 4. It is the one.
When the infrared spectrophotometer 61 adopts the total reflection method,
As shown in FIG. 6, an ATR prism 62 is provided in contact with the surface of the measurement sample 4 opposite to the metal thin film 6, and the ATR prism 62 is provided.
The infrared light from the infrared light source 63 is incident on the measurement sample 4 via the prism 62 under the condition of total reflection, and the reflected light is transmitted to the AT.
In the case where the infrared absorption spectrum of the measurement sample 4 is measured by the detector 64 through the R prism 62 and the high-sensitivity reflection method is adopted, the
The R prism 62 is omitted in the configuration. Regarding the infrared spectroscopic analysis method, for example, "Basics and practice of FT-IR",
It is described in detail in Mitsuo Tasumi, Tokyo Kagaku Dojin, (1986) P47-82, P92-113.

According to this embodiment, by using the infrared spectrophotometer 61 at the same time as the observation by the surface plasmon microscope 2, the state near the surface of the measurement sample 4 in contact with the ATR prism 62 by the total reflection method, Further, the state of the thin film-shaped measurement sample 4 on the metal thin film 6 can be qualitatively and quantitatively analyzed by the high-sensitivity reflection method.
In the case of an oriented film, the orientation state can be known. Further, since the heater 3 is also added, in the case where the measurement sample 4 is an oriented film, by heating this with the heater 3, the state change such as phase transition and phase separation due to heating, It is possible to simultaneously measure the orientation state of the film associated therewith.

FIG. 7 shows a seventh embodiment of the present invention. This measuring device 70 is the same as the measuring device 5 shown in FIG.
0 is provided with a laser Raman spectrophotometer 71. The laser Raman spectrophotometer 71 includes a laser light source 72 and a spectral detector 7 on the side of the measurement sample 4 opposite to the metal thin film 6.
3 is arranged, and strong monochromatic light is made incident on the measurement sample 4 from the laser light source 72 via the electrode 31, and the number of waves received by the incident light is caused by one of the vibrations of the molecule that causes a change in the polarizability of the molecule. A change (Raman scattering) is detected by the spectroscopic detector 73. Regarding the Raman spectrum method, for example, “Instrument analysis”, Masayuki Tanaka, Yoshio Iida,
It is written in Sokabo, P104-109.

According to this embodiment, the state of the dielectric substance 53 as the sensitive film can be observed and analyzed before and after the measurement as the chemical / biosensor, and more accurate sensing is possible. . Further, since the laser Raman spectrophotometer 71 uses visible light, it is possible to measure an aqueous solution system as compared with the case of using infrared light which is highly absorbed by water.

FIG. 8 shows an eighth embodiment of the present invention. This measuring device 80 is the measuring device 1 shown in FIG.
In addition, a known optical microscope 81 is provided to allow a certain part of the measurement sample 4 to be observed simultaneously by two means. The optical microscope 81 uses the metal thin film 6 of the measurement sample 4.
The objective lens 82 is arranged on the surface side not in contact with the surface plasmon microscope 2 so that the same portion can be observed simultaneously with the surface plasmon microscope 2. The objective lens 82 has a long focus from the point of view of the configuration.

According to this embodiment, the target portion of the measurement sample 4 observed by the surface plasmon microscope 2 is the optical microscope 8
It becomes possible to adjust while observing with 1. For example,
Generally, since the scanning range of the XY stage 17 of the surface plasmon microscope 2 is about 200 μm × 200 μm,
It exists within the visual field range of the optical microscope 81. Therefore,
After deciding a desired portion of the measurement sample 4 with the optical microscope 81 and observing the optical microscope image, the surface plasmon image can be obtained by scanning the XY stage 17. When the measurement sample 4 is a transparent biological material sample or the like, it can be observed by staining the sample with a fluorescent substance and using the optical microscope 81 as a fluorescence microscope.

FIG. 9 shows a ninth embodiment of the present invention. This measuring device 90 is the measuring device 1 shown in FIG.
A scanning tunneling microscope 91 is provided in the above, so that a certain part of the measurement sample 4 can be simultaneously observed by two means. The scanning tunneling microscope 91 arranges a probe 92 and a piezoelectric body 93 on the surface side of the measurement sample 4 which is not in contact with the metal thin film 6, and requires a DC power supply 94 between the probe 92 and the metal thin film 6. Voltage is applied so that the same portion can be measured by the scanning tunneling microscope 91 at the same time as the surface plasmon microscope 2. Therefore, the measurement sample 4 in this case is limited to the ultra-thin film dielectric through which the tunnel current flows.

According to this embodiment, since the tunnel current effect in the surface plasmon excited state or the change in the surface plasmon state when the tunnel current is generated can be measured, the physical properties of the substance constituting the thin film at the atomic level can be investigated. You can That is, a tunnel current is passed through the measurement sample 4 before the surface plasmon excitation, and a change in the tunnel current due to the surface plasmon excitation and a comparison of tunnel microscope images before and after the surface plasmon excitation can be performed.

FIG. 10 shows a tenth embodiment of the present invention. In this measuring apparatus 100, a scanning atomic force microscope 101 is provided in the measuring apparatus 1 shown in FIG. 1 so that a certain portion of a measurement sample 4 can be observed simultaneously by two means. Scanning atomic force microscope 101
Arranges the cantilever 102 and the piezoelectric body 93 on the surface side of the measurement sample 4 which is not in contact with the metal thin film 6 so that the same site can be measured by the scanning atomic force microscope 101 at the same time as the surface plasmon microscope 2. . Therefore, the measurement sample 4 in this case is limited to the ultrathin film dielectric having a thickness equal to or less than the wavelength of the evanescent wave that excites the surface plasmon.

According to this embodiment, the change in interatomic force during surface plasmon excitation can be measured, so that the physical properties at the atomic level constituting the thin film can be investigated. That is, an atomic force is generated between the measurement sample 4 and the cantilever 102 before the surface plasmon excitation, and a change in the atomic force due to the surface plasmon excitation or a comparison of atomic force microscope images before and after the surface plasmon excitation is performed. It can be carried out.

FIG. 11 shows an eleventh embodiment of the present invention. This measuring apparatus 110 is provided with a magnetic coil 111 in the measuring apparatus 30 shown in FIG. 3 to enable observation of a state change associated with the application of the magnetic field of the measurement sample 4. The magnetic coil 111 is arranged on the surface side of the measurement sample 4 which is not in contact with the metal thin film 6 so that a magnetic field is applied to the measurement sample 4.

According to this embodiment, the surface plasmon microscope 2 can easily observe the change in the surface state of the measurement sample 4 which causes the orientation change due to the magnetic field.

It should be noted that the present invention is not limited to the above-described embodiments, and many variations and modifications are possible. For example, in each of the above-described embodiments, the surface plasmon microscope is arranged above, but it can be arranged below or in any direction such as the lateral direction. Further, in the third to eleventh embodiments, the surface plasmon microscope has the same structure as that of the first embodiment, but it may have the same structure as that of the second embodiment and the heater 3 is omitted. You can also

Further, the optical microscope 81 shown in the eighth embodiment.
Can also be added to the measuring devices of the second to sixth embodiments. However, when it is added to the measuring devices of the third to sixth embodiments, the electrode 31 is composed of a transparent electrode. Further, the scanning tunneling microscope 91 shown in the ninth embodiment can be added to the measuring devices of the second and sixth embodiments, and similarly, the scanning atomic force microscope 101 shown in the tenth embodiment is
It can also be added to the measuring devices of the second and sixth embodiments. However, when the scanning tunneling microscope 91 or the scanning atomic force microscope 101 is added to the measuring apparatus of the sixth embodiment, the infrared spectrophotometric system 61 is constructed by the high sensitivity method without using the ATR prism 62.

Further, the magnetic coil 11 shown in the eleventh embodiment.
1 can also be added to the measuring devices of the first, second, fourth to eighth embodiments. Furthermore, the external stimulating means is not limited to the above-mentioned thermal, electrical and magnetic means, and means for applying a sound wave may be added.

Further, the present invention can be constructed by arbitrarily combining the surface plasmon microscope with the above-mentioned various external stimulating means and / or measuring means. By the way, in the above embodiment, the surface plasmon microscope, in addition to the various stimulating means described above, is further provided with an observing means for observing the sample surface.
If you have an observing means, you can observe and measure the target area on the sample surface, so you can confirm the measurement position and compare various measurement data other than information by surface plasmon resonance. This makes it possible to more accurately obtain information about the sample.

Further, the stimulating means may be a means for applying a combination of one or a plurality of stimuli of heat, sound wave, electric field, magnetic field, chemical reaction, electrochemical reaction and the like to the dielectric sample. As the observation means, one of various means such as an infrared spectrophotometer, a Raman spectrophotometer, an optical microscope, a scanning tunneling microscope (STM), and a scanning atomic force microscope (AFM) is used. One or more can be used in combination.

[0048]

As described above, according to the present invention, in the measuring apparatus utilizing the surface plasmon resonance, since the surface plasmon measuring means is provided with the stimulating means, the change of the state of the sample when the stimulus is applied is suppressed. It can be measured, and various information about the sample can be accurately obtained.

Further, by providing an observing means for observing the surface of the dielectric sample, the change of the state of the sample at the measuring position of the sample for which the surface plasmon is being measured,
Since information other than information by surface plasmon resonance can be obtained, more accurate information of the sample can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view showing a first embodiment of the present invention.

FIG. 2 is a sectional view showing a second embodiment of the same.

FIG. 3 is a sectional view showing a third embodiment of the same.

FIG. 4 is a sectional view showing a fourth embodiment of the same.

FIG. 5 is a sectional view showing a fifth embodiment of the same.

FIG. 6 is a sectional view showing a sixth embodiment of the same.

FIG. 7 is a sectional view showing a seventh embodiment of the same.

FIG. 8 is a sectional view showing an eighth embodiment of the same.

FIG. 9 is a sectional view showing a ninth embodiment of the same.

FIG. 10 is a sectional view showing a tenth embodiment.

FIG. 11 is a sectional view showing an eleventh embodiment.

[Explanation of symbols]

1, 20, 30, 40, 50, 60, 70, 80, 9
0,100,110 Measuring device 2,21 Surface plasmon microscope 3 Heating heater 4 Measurement sample 5 Transparent substrate 6 Metal thin film 7 Matching oil 8 Optical prism 9 Monochromatic laser light source 10 Polarizing plate 11 Beam expander 12 Aperture 13 Condensing lens 14 ND filter 15 Cylindrical lens 16 Photodiode array 17 XY stage 18 Prism fixing member 19 Thermistor 22 CCD camera 23 Fixed stage 31 Electrode 32 DC power supply 41 Cell frame 42 Cell 51 Injection pipe 52 Discharge pipe 53 Dielectric substance 61 Infrared spectroscopy Photometer 62 ATR prism 63 Infrared light source 64 Detector 71 Laser Raman spectrophotometer 72 Laser light source 73 Spectral detector 81 Optical microscope 82 Objective lens 91 Scanning tunneling microscope 92 Probe 93 Piezoelectric body 94 Straight Power 101 Scanning atomic force microscope 102 cantilever 111 magnetic coil

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Seiji Kondo 2-43-2 Hatagaya, Shibuya-ku, Tokyo Inside Olympus Optical Co., Ltd. (72) Inventor Kiyozo Koshiishi 7 Motomachi Hashimachi, Sagamihara-shi, Kanagawa 32 (72) Inventor Masatsugu Shimomura 2-24-48-103 Nakamachi, Koganei-shi, Tokyo (72) Inventor Ichiro Yamaguchi 2-1, Hirosawa, Wako-shi, Saitama RIKEN (72) Inventor Takayuki Okamoto Wako, Saitama 2-1, Hirosawa City, RIKEN

Claims (3)

[Claims] 1. A dielectric sample is brought into contact with one surface of a metal thin film, and polarized light is incident on the other surface of the metal thin film under conditions of total reflection to induce surface plasmon resonance.
The surface plasmon measuring means for measuring the state of the dielectric sample by detecting the reflected light, and the stimulating means for physically or chemically stimulating the dielectric sample are provided, and are stimulated by the stimulating means. A measuring apparatus using surface plasmon resonance, characterized in that the state change of the dielectric sample is measured by the surface plasmon measuring means. 2. The measurement apparatus according to claim 1, further comprising an observation means for observing a surface of the dielectric sample that is not in contact with the metal thin film, wherein surface plasmon resonance is used. measuring device. 3. The measuring device according to claim 1, wherein the dielectric sample is a functional thin film made of a material that interacts with a specific component of gas or liquid, and the interaction that occurs in the thin film is measured. Accordingly, a measuring device utilizing surface plasmon resonance, comprising a detection means for detecting the concentration of the specific component of the gas or liquid.