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JPH06166510A - Method for producing fine particle silicon carbide - Google Patents

Method for producing fine particle silicon carbide

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Publication number
JPH06166510A
JPH06166510A JP43A JP33985692A JPH06166510A JP H06166510 A JPH06166510 A JP H06166510A JP 43 A JP43 A JP 43A JP 33985692 A JP33985692 A JP 33985692A JP H06166510 A JPH06166510 A JP H06166510A
Authority
JP
Japan
Prior art keywords
silicon carbide
less
raw material
silica
silica source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43A
Other languages
Japanese (ja)
Inventor
Takashi Oda
高士 小田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
Original Assignee
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai Carbon Co Ltd filed Critical Tokai Carbon Co Ltd
Priority to JP43A priority Critical patent/JPH06166510A/en
Publication of JPH06166510A publication Critical patent/JPH06166510A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】 未反応原料成分の残留や異形態の炭化珪素の
副生を伴なうことなく、常に高品質の微粒子状炭化珪素
を操業性よく製造する方法を提供する。 【構成】 シリカ源と炭材からなる混合原料を不活性雰
囲気中で1300〜2000℃の温度に加熱してシリカ
源の還元炭化反応により炭化珪素粉末に転化させる方法
において、シリカ源にコロイダルシリカを用い、炭材と
して炭素含有率99%以上、硫黄含有率0.2%以下の
純度特性と、BET比表面積80m2/g以下、DBP吸油
量60ml/100g 以上の粒子性状を備えるカーボンブラッ
クを用い、混合原料の組成をC/SiO2 モル比として
1.6〜2.2の範囲内にに設定する。
(57) [Summary] [PROBLEMS] To provide a method for always producing high-quality fine particle-shaped silicon carbide with good operability, without leaving unreacted raw material components and by-produced silicon carbide in a different shape. In a method of heating a mixed raw material composed of a silica source and a carbonaceous material to a temperature of 1300 to 2000 ° C. in an inert atmosphere to convert it into silicon carbide powder by a reducing carbonization reaction of the silica source, colloidal silica is added to the silica source. Carbon black having a carbon content of 99% or more and a sulfur content of 0.2% or less, a BET specific surface area of 80 m 2 / g or less, and a DBP oil absorption amount of 60 ml / 100 g or more is used as the carbonaceous material. The composition of the mixed raw material is set within the range of 1.6 to 2.2 in terms of C / SiO 2 molar ratio.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、未反応成分やウイスカ
ーのような副生物の発生を伴わずに高品質の微粒子状炭
化珪素を効率的に製造するための方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for efficiently producing high-quality particulate silicon carbide without the generation of unreacted components and by-products such as whiskers.

【0002】[0002]

【従来の技術】従来、炭化珪素粉末を製造する方法とし
て、シリカを炭材とともに加熱処理する還元炭化法、ハ
ロゲン化珪素化合物と炭化水素を気相系で加熱反応させ
る気相反応法、有機珪素化合物を熱分解反応させる熱分
解法が知られている。このうち気相反応法および熱分解
法は、サブミクロン級もしくはそれを下廻る微粒子状の
炭化珪素を純度よく生成させることが可能であるが、原
料に用いるハロゲン化珪素化合物や有機珪素化合物が高
価で取扱い難い物質であるうえに、生成収率が低いた
め、工業的な生産手段としては問題が多い。
2. Description of the Related Art Conventionally, as a method for producing silicon carbide powder, a reducing carbonization method in which silica is heat-treated with a carbonaceous material, a gas phase reaction method in which a silicon halide compound and hydrocarbon are heated and reacted in a gas phase system, and an organic silicon are used. A thermal decomposition method in which a compound undergoes a thermal decomposition reaction is known. Among them, the gas phase reaction method and the thermal decomposition method can generate fine-grained silicon carbide of submicron grade or less, but the silicon halide compound or the organic silicon compound used as a raw material is expensive. In addition to being a difficult substance to handle, the production yield is low, so there are many problems as an industrial production means.

【0003】この点、還元炭化法は古くからアチソン法
と呼ばれる比較的単純な炉操業で量産できるため、現在
でも炭化珪素粉末を工業生産するための基本技術とされ
ている。しかしながら、この方法は一旦、炭化珪素のイ
ンゴットを生成させたのち粉砕、分級工程を反復して所
望の粒度に調製するプロセスが採られているため、得ら
れる粉末粒度には限界があり、また粉砕過程等で不純物
が混入する関係で高純度のものが製造できない欠点があ
る。
In this respect, the reduction carbonization method has long been regarded as a basic technique for industrially producing silicon carbide powder because it can be mass-produced by a relatively simple furnace operation called the Acheson method. However, since this method employs a process in which an ingot of silicon carbide is once generated and then crushing and classifying steps are repeated to adjust to a desired particle size, there is a limit to the powder particle size to be obtained, and the crushing is also difficult. There is a drawback that a high-purity product cannot be manufactured due to the inclusion of impurities in the process.

【0004】その後、各産業分野においてサブミクロン
級の微粒子状で純度の高い炭化珪素の開発要求が高ま
り、この対応として還元炭化法を基本技術としながら原
料系を種々の組成あるいは形態に変える炭化珪素粉末の
製造方法が提案されている。例えば、シリカ源溶液に炭
素または炭素化合物を均一に分散もしくは溶解し、ゲル
化して乾燥させたのち炭化珪素を合成する方法(特開昭
58−104010号公報) 、水蒸気を含む熱ガス中に四塩化珪
素、トリクロロシランのような分解性の珪素化合物とメ
タノール、ベンゼン、灯油、クレオソート油などの炭化
水素化合物を送入して珪素酸化物と単体炭素を含む混合
エーロゾルを生成捕集し、該エーロゾルを強熱すること
により比表面積の高い炭化珪素粉末を生成する方法(特
開昭58−213621号公報) 等がこれにあたる。しかしなが
ら、前者の方法による場合には、シリカ源溶液と炭素ま
たは炭素化合物を混合する際に界面活性剤を添加する工
程や均一混合原料を調製した後にpH調整によりゲル化
する工程が必要になる等、工程が極めて煩雑化する難点
があり、後者の方法においては、均一混合原料をある程
度連続的に調製することは可能となるが、分解性珪素化
合物に取扱い難いハロゲン化物を含むため、装置の複雑
化と操業面での煩雑性が避けられない問題がある。
Thereafter, in each industrial field, there has been an increasing demand for development of submicron-class fine particles of high-purity silicon carbide, and in order to meet this demand, silicon carbide which changes the raw material system into various compositions or forms while using the reducing carbonization method as a basic technology. A method for producing powder has been proposed. For example, a method of uniformly dispersing or dissolving carbon or a carbon compound in a silica source solution, gelling and drying, and then synthesizing silicon carbide (Japanese Patent Laid-Open Publication No. S60-187242).
58-104010), a decomposable silicon compound such as silicon tetrachloride and trichlorosilane and a hydrocarbon compound such as methanol, benzene, kerosene, and creosote oil are fed into a hot gas containing water vapor to oxidize silicon. A method of producing and collecting a mixed aerosol containing a substance and elemental carbon and igniting the aerosol to produce a silicon carbide powder having a high specific surface area (Japanese Patent Laid-Open No. 58-213621) and the like correspond to this. However, in the case of the former method, a step of adding a surfactant when mixing a silica source solution and carbon or a carbon compound or a step of gelling by adjusting pH after preparing a uniform mixed raw material is required. However, in the latter method, it is possible to prepare a homogeneous mixed raw material to some extent continuously, but the decomposable silicon compound contains a difficult-to-handle halide, which complicates the equipment. There is an unavoidable problem of complication and operational complexity.

【0005】また、超微細炭化珪素粉末の製造方法とし
て、シリカ粉末と比表面積が1〜1000m2/g範囲内の
カーボンブラックを各種のバインダー成分で造粒成形し
たのち連続的に加熱還元する方法(特開昭59−39709 号
公報、特開昭59−190208号公報) も提案されている。こ
の方法では比較的粒子性状の制御が容易なカーボンブラ
ックを炭材としているため、微細な炭化珪素粉末を得る
ための条件が調整しやすい利点がある。また、比表面積
の大きな微粒子状のカーボンブラックを選択使用するこ
とにより還元炭化反応を促進させることも可能となる。
ところが、余り比表面積の大きなカーボンブラックを用
いると、逆にシリカの炭化珪素への転換効率を減退さ
せ、同時にSiOガスの分圧が高まって粒の結晶化が進
み、ウイスカーを多く副生する現象を招くようになる。
As a method for producing ultrafine silicon carbide powder, a method in which silica powder and carbon black having a specific surface area of 1 to 1000 m 2 / g are granulated with various binder components and then continuously heated and reduced (JP-A-59-39709 and JP-A-59-190208) have also been proposed. In this method, carbon black whose particle properties are relatively easy to control is used as the carbonaceous material, so that there is an advantage that the conditions for obtaining fine silicon carbide powder can be easily adjusted. It is also possible to accelerate the reducing carbonization reaction by selectively using fine particle carbon black having a large specific surface area.
However, when carbon black having a too large specific surface area is used, on the contrary, the conversion efficiency of silica to silicon carbide is decreased, and at the same time, the partial pressure of SiO gas is increased to promote crystallization of particles and a large amount of whiskers are by-produced. Will be invited.

【0006】本出願人は、このような現象を回避し、ウ
イスカーの副生を伴わない良質性状の微粒子状炭化珪素
を製造するために、還元炭化法における炭材としてBE
T比表面積80m2/g以下、DBP吸油量100ml/100g
以下および凝集体ストークスモード径1μm 以下の特性
を備えるカーボンブラックを用い、混合原料の組成をC
/SiO2 として3.5以上に条件設定する方法を開発
し、既に特願平3−321074号として提案している。
[0006] The applicant has begun to use BE as a carbonaceous material in the reduction carbonization method in order to avoid such a phenomenon and to produce fine-grained silicon carbide of good quality with no by-products of whiskers.
T specific surface area 80m 2 / g or less, DBP oil absorption 100ml / 100g
The composition of the mixed raw material is C, using carbon black having the following characteristics and the aggregate Stokes mode diameter of 1 μm or less.
A method for setting the condition of / SiO 2 to be 3.5 or more has been developed and already proposed as Japanese Patent Application No. 3-321074.

【0007】[0007]

【発明が解決しようとする課題】本発明者は、炭材にカ
ーボンブラックを用いて還元炭化法により炭化珪素粉末
を製造する際の使用カーボンブラックの特性と生成する
炭化珪素粉末の性状との関係につき引き続き多面的な研
究を重ねる過程で、珪素源にコロイダルシリカを選択
し、炭材カーボンブラックの純度特性ならびに粒子性状
を特定化すると共に原料混合組成を一定範囲内に設定す
ると、一層高品位で残留成分や副生物がない状態で微粒
子炭化珪素を得ることができることを確認した。
DISCLOSURE OF THE INVENTION The present inventor has found that the relationship between the characteristics of carbon black used when producing silicon carbide powder by a reduction carbonization method using carbon black as a carbonaceous material and the properties of the silicon carbide powder produced. In the process of continuing multifaceted research, the colloidal silica was selected as the silicon source, the purity characteristics and particle characteristics of the carbonaceous carbon black were specified, and the raw material mixture composition was set within a certain range. It was confirmed that the fine particle silicon carbide can be obtained without any residual component or by-product.

【0008】本発明は前記の知見に基づいて開発された
もので、その目的は、未反応原料成分の残留や、繊維
状、ウイスカー状、粗粒状など異形態の炭化珪素の副生
させることなく、常に高品質の微粒子状炭化珪素を操業
性よく製造するための方法を提供することにある。
The present invention was developed on the basis of the above-mentioned findings, and its purpose is to prevent residual unreacted raw material components and by-products of silicon carbide in different forms such as fibrous, whisker-like and coarse particles. The object of the present invention is to provide a method for always producing high-quality fine particle silicon carbide with good operability.

【0009】[0009]

【課題を解決するための手段】上記の目的を達成するた
めの本発明による微粒子状炭化珪素の製造方法は、シリ
カ源と炭材からなる混合原料を不活性雰囲気中で130
0〜2000℃の温度に加熱してシリカ源の還元炭化反
応により炭化珪素粉末に転化させる方法において、シリ
カ源にコロイダルシリカを用い、炭材として炭素含有率
99%以上、硫黄含有量0.2%以下の純度特性と、B
ET比表面積80m2/g以下、DBP吸油量60ml/100g
以上の粒子性状を備えるカーボンブラックを用い、混合
原料の組成をC/SiO2 モル比として1.6〜2.2
の範囲内に設定することを構成上の特徴とする。
In order to achieve the above-mentioned object, a method for producing fine particulate silicon carbide according to the present invention comprises a mixed raw material comprising a silica source and a carbonaceous material in an inert atmosphere.
In the method of heating to a temperature of 0 to 2000 ° C. to convert to a silicon carbide powder by a reduction carbonization reaction of a silica source, colloidal silica is used as a silica source, a carbon content of 99% or more as a carbon material, and a sulfur content of 0.2. % Or less purity characteristics, B
ET specific surface area 80m 2 / g or less, DBP oil absorption 60ml / 100g
The carbon black having the above particle properties is used, and the composition of the mixed raw material is C / SiO 2 molar ratio of 1.6 to 2.2.
The characteristic feature of the configuration is to set the value within the range.

【0010】本発明においては、シリカ源としてコロイ
ダルシリカを選択使用する。ゾルの分散濃度やアルカリ
イオン成分等には特に限定はないが、通常、分散シリカ
粒子が1〜100nmでNa+ 系のものが好適に用いられ
る。コロイダルシリカをシリカ源とする理由は、炭材カ
ーボンブラックとの混合性を改善し、炭材組織の内部ま
で均一に含浸分散させることができるからである。粉体
状のシリカ原料を用いると混合時に分散不良を生じる事
態が避けられない。また、アエロジルのような超微粉の
シリカを有機溶媒の存在下にカーボンブラックと湿式撹
拌してもシリカ成分が炭材組織中に入り込まないから、
原料界面での還元炭化反応が円滑に進行しない。
In the present invention, colloidal silica is selectively used as the silica source. There are no particular restrictions on the dispersion concentration of the sol, the alkali ion component, etc., but normally, a dispersed silica particle having a particle size of 1 to 100 nm and a Na + type is preferably used. The reason why colloidal silica is used as a silica source is that the mixing property with carbonaceous carbon black can be improved and the carbonaceous material can be uniformly impregnated and dispersed even inside the carbonaceous structure. When powdery silica raw materials are used, it is inevitable that poor dispersion will occur during mixing. In addition, since silica components do not enter the carbonaceous structure even when wet-stirring ultrafine silica such as Aerosil with carbon black in the presence of an organic solvent,
The reducing carbonization reaction at the raw material interface does not proceed smoothly.

【0011】炭材に使用されるカーボンブラックの種
類、製造履歴などは特に限定されるものではなく、ファ
ーネスブラック、アセチレンブラック、サーマルブラッ
クなど各種のものを適用することができるが、上記の構
成で特定された特性要件を満たすものでなければならな
い。このうち炭素含有率99%以上で硫黄含有量0.2
%以下の純度特性は、還元炭化反応時にウイスカーを含
む繊維状物の生成を抑制化するために必要な条件で、炭
素含有率が99%を下廻り、硫黄含有量が0.2%を越
えると反応成分のガス化を促進し、繊維状炭化珪素など
の気相生成物を発生し易くなる。また、含有不純物がF
e、Co、Niのような遷移金属である場合には、これ
れ成分が触媒となってウイスカーの生成を促進させる。
The type and production history of carbon black used for the carbonaceous material are not particularly limited, and various types such as furnace black, acetylene black and thermal black can be applied. It must meet the specified property requirements. Of these, a carbon content of 99% or more and a sulfur content of 0.2
The purity characteristic of not more than% is a condition necessary for suppressing the formation of fibrous substances containing whiskers during the reduction carbonization reaction, and when the carbon content is less than 99% and the sulfur content exceeds 0.2%. Gasification of the reaction components is promoted, and vapor phase products such as fibrous silicon carbide are easily generated. Also, if the impurities contained are F
In the case of a transition metal such as e, Co or Ni, these components act as a catalyst to accelerate the formation of whiskers.

【0012】前記の純度特性に加え、炭材カーボンブラ
ックはBET比表面積が80m2/g以下でDBP吸油量が
60ml/100g 以上の粒子性状を備える必要がある。BE
T比表面積が80m2/gを越えると反応が進み過ぎて繊維
状物の副生が多くなる。またDBP吸油量が60ml/100
g 未満になると凝集構造が不足してコロイダルシリカを
含浸させる際にスラリー化が起こり、このため乾燥後の
コロイダルシリカが単体でガラス状に凝固偏析して未反
応のSiO2 を残留し易くなる。なお、粒子性状の評価
指標となる各特性値は、BET比表面積(N2SA)について
は、ASTMD3037−78“Standard Method of Testing
Carbon Black-Surface Area by Nitro-gen Adsorptio
n”MethodCにより、他方、DBP吸油量はJIS K6
221(1975)「ゴム用カーボンブラックの試験方法」6.1.2
項の吸油量A法により得られる値を適用するものとす
る。
In addition to the above-mentioned purity characteristics, the carbonaceous carbon black must have particle characteristics such that the BET specific surface area is 80 m 2 / g or less and the DBP oil absorption is 60 ml / 100 g or more. BE
If the T specific surface area exceeds 80 m 2 / g, the reaction will proceed too much and the by-products of the fibrous material will increase. Also, the DBP oil absorption is 60 ml / 100
If it is less than g, the agglomeration structure is insufficient and slurry is formed when impregnating the colloidal silica. Therefore, the dried colloidal silica is solidified and segregated into a glassy state, and unreacted SiO 2 is likely to remain. In addition, regarding each characteristic value that is an evaluation index of particle properties, regarding BET specific surface area (N 2 SA), ASTM D3037-78 “Standard Method of Testing
Carbon Black-Surface Area by Nitro-gen Adsorptio
n "Method C, on the other hand, DBP oil absorption is JIS K6
221 (1975) "Testing method for carbon black for rubber" 6.1.2
The value obtained by the oil absorption amount A method in the section shall be applied.

【0013】コロイダルシリカとカーボンブラック炭材
からなる混合原料は、両成分が均一分散するばかりでな
く炭材組織内部にシリカ源が入り込む状態に調製するこ
とが好ましい。このための効果的な混合手段は、強力な
撹拌装置を用いて両原料成分を十分に混練するか、シリ
カゾル溶液を造粒液として炭材カーボンブラックを転動
造粒する方法などである。造粒化する場合には、装置と
してカーボンブラックのペレット化に適用されるピン型
造粒機を用いることができる。
The mixed raw material composed of colloidal silica and carbon black carbonaceous material is preferably prepared so that both components are uniformly dispersed and a silica source enters the inside of the carbonaceous material structure. An effective mixing means for this purpose is a method in which both raw material components are sufficiently kneaded using a powerful stirring device, or a method in which carbonaceous carbon black is tumbled and granulated using a silica sol solution as a granulating liquid. In the case of granulating, a pin-type granulator applicable to pelletizing carbon black can be used as an apparatus.

【0014】混合原料の組成は、C/SiO2 のモル比
として1.6〜2.2の範囲内になるように設定する。
該モル比が1.6未満になるとシリカの炭化珪素への転
化率が低下して未反応シリカの残留量が多くなり、2.
2を越えると逆に炭素源が余剰となって未反応の遊離炭
素量が多くなる。
The composition of the mixed raw material is set so that the molar ratio of C / SiO 2 is within the range of 1.6 to 2.2.
When the molar ratio is less than 1.6, the conversion rate of silica to silicon carbide decreases, and the amount of unreacted silica remaining increases, and
If it exceeds 2, the carbon source becomes excessive and the amount of unreacted free carbon increases.

【0015】調製されたシリカとカーボンブラックから
なる混合原料は、黒鉛のような高耐熱性材料で作成され
た反応容器に充填密閉し、不活性雰囲気に保持された加
熱炉中で1300〜2000℃の温度域で加熱反応させ
る。反応後に回収される炭化珪素は遊離炭素量2%未
満、残留SiO2 量1%未満で粒子径が1μm 以下の微
粒子状を呈する高品質のもので、従来技術で必要とされ
ていた未反応の残留カーボンブラック成分は大気中での
燃焼除去したり、残留シリカ成分を薬品洗浄して除去す
る等の後処理を施さずにそのまま製品化することができ
る。
The prepared mixed raw material of silica and carbon black is filled and sealed in a reaction vessel made of a highly heat-resistant material such as graphite, and placed at 1300 to 2000 ° C. in a heating furnace kept in an inert atmosphere. Heat reaction in the temperature range of. The silicon carbide recovered after the reaction is of high quality, having a free carbon content of less than 2%, a residual SiO 2 content of less than 1% and a particle size of 1 μm or less, which is unreacted as required by the prior art. The residual carbon black component can be commercialized as it is without performing post-treatment such as combustion removal in the air or chemical cleaning of the residual silica component to remove it.

【0016】[0016]

【作用】本発明による炭化珪素粉末の生成機構は、次式
の (1)および(2) による2段階の還元炭化反応を介して
進行する。 SiO2(s)+C(s) →SiO(g) +CO(g) … (1) SiO(g) +2C(s) →SiC(s) +CO(g) … (2) したがって、炭化珪素の生成は (2)式の気−固反応によ
るが、反応が急激に進行すると生成粒子が粗大になった
り気相反応に移行してウイスカーのような繊維状の炭化
珪素の副生が多くなり、相対的に微粒子状炭化珪素の生
成歩留りが低下する。
The mechanism of producing the silicon carbide powder according to the present invention proceeds through a two-step reductive carbonization reaction according to the following equations (1) and (2). SiO 2 (s) + C (s) → SiO (g) + CO (g) (1) SiO (g) + 2C (s) → SiC (s) + CO (g) (2) Therefore, the generation of silicon carbide Although it depends on the gas-solid reaction of the equation (2), when the reaction rapidly progresses, the generated particles become coarse or move to the gas phase reaction to increase the by-products of fibrous silicon carbide such as whiskers. In addition, the production yield of particulate silicon carbide is reduced.

【0017】本発明によるコロイダルシリカと特定性状
のカーボンブラック炭材による原料組合せによれば、上
記 (2)式の反応が円滑に進行して気相反応への移行を抑
制し、粗粒状や繊維状物の副生を伴わずに微粒子状の炭
化珪素が主体的に生成する。そのうえ、原料組成をC/
SiO2 モル比が1.6〜2.2になるように設定する
ことにより未反応のシリカおよび炭材成分の残留がなく
なるから、これら成分を除去するための煩雑な後処理を
施す必要もなくなる。このような作用が相乗して、常に
粒子径1μm 以下の均質粒子性状を備える高品質の微粒
子状炭化珪素を操業性よく製造することが可能となる。
According to the raw material combination of the colloidal silica and the carbon black carbonaceous material having the specific property according to the present invention, the reaction of the above formula (2) proceeds smoothly and suppresses the transition to the gas phase reaction, and the coarse particles and fibers are Fine particles of silicon carbide are predominantly produced without accompanying by-products. In addition, the raw material composition is C /
By setting the SiO 2 molar ratio to be 1.6 to 2.2, unreacted silica and carbonaceous material components do not remain, so that it is not necessary to perform a complicated post-treatment for removing these components. . Such actions synergistically make it possible to always manufacture high-quality fine particle-shaped silicon carbide having a uniform particle size of 1 μm or less with good operability.

【0018】[0018]

【実施例】以下、本発明の実施例を比較例と対比して説
明する。
EXAMPLES Examples of the present invention will be described below in comparison with comparative examples.

【0019】実施例1〜4、比較例1〜6 表1に示す各種のシリカ源とカーボンブラック炭材を万
能撹拌機〔(株)ダルトン社製〕で十分に混合し、乾燥
したのち黒鉛製反応容器に充填し、上部に黒鉛蓋を被せ
て窒素ガス雰囲気に保持された高周波炉に入れて20℃
/min の昇温速度で1600℃に上昇し、この温度に2
時間保持して還元炭化反応をさせた。反応後に回収され
た炭化珪素粉末の性状を、表2に示した。
Examples 1 to 4 and Comparative Examples 1 to 6 Various silica sources shown in Table 1 and carbon black carbonaceous materials were thoroughly mixed with a universal stirrer (manufactured by Dalton Co., Ltd.), dried and then made of graphite. Fill the reactor with a graphite lid on top and place in a high-frequency furnace maintained in a nitrogen gas atmosphere at 20 ° C.
The temperature rises to 1600 ° C at a heating rate of / min and
It was held for a time to cause a reduction carbonization reaction. Table 2 shows the properties of the silicon carbide powder recovered after the reaction.

【0020】[0020]

【表1】 [Table 1]

【0021】[0021]

【表2】 [Table 2]

【0022】表1と表2を対比して明らかなように、実
施例による炭化珪素はいづれも未反応成分が少ない粒径
1μm 以下の均質微細粒子で、その比表面積範囲は10
〜30m2/gの範囲にあり、そのまま製品となる性状であ
った。これに対し、本発明の要件を外れる比較例の炭化
珪素は正常な微粒子とならないか、未反応成分が多量に
残留して除去するための後処理が必要であった。
As is clear from comparison between Tables 1 and 2, the silicon carbides according to the examples are homogeneous fine particles having a particle size of 1 μm or less with a small amount of unreacted components, and their specific surface area range is 10 μm.
It was in the range of up to 30 m 2 / g, and it was a property as it was as a product. On the other hand, the silicon carbide of the comparative example, which is out of the requirements of the present invention, does not become normal fine particles or requires a post-treatment to remove a large amount of unreacted components.

【0023】[0023]

【発明の効果】以上のとおり、本発明に従えばコロイダ
ルシリカをシリカ源とし、特定された純度特性ならびに
粒子性状を備えるカーボンブラックを炭材とし、かつ原
料組成を所定の範囲に設定して還元炭化プロセスを適用
することにより、サブミクロン級の高品質な微粒子状炭
化珪素を煩雑な後処理を施す必要なしに操業性よく製造
することができる。したがって、焼結用の炭化珪素粉末
を目的とした製造技術として極めて有用である。
As described above, according to the present invention, colloidal silica is used as a silica source, carbon black having specified purity characteristics and particle characteristics is used as carbonaceous material, and the raw material composition is set within a predetermined range for reduction. By applying the carbonization process, it is possible to manufacture high-quality submicron-grade fine-grained silicon carbide with good operability without the need for complicated post-treatment. Therefore, it is extremely useful as a manufacturing technique for the purpose of producing silicon carbide powder for sintering.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 シリカ源と炭材からなる混合原料を不活
性雰囲気中で1300〜2000℃の温度に加熱してシ
リカ源の還元炭化反応により炭化珪素粉末に転化させる
方法において、シリカ源にコロイダルシリカを用い、炭
材として炭素含有率99%以上、硫黄含有量0.2%以
下の純度特性と、BET比表面積80m2/g以下、DBP
吸油量60ml/100g 以上の粒子性状を備えるカーボンブ
ラックを用い、混合原料の組成をC/SiO2 モル比と
して1.6〜2.2の範囲内に設定することを特徴とす
る微粒子状炭化珪素の製造方法。
1. A method of heating a mixed raw material comprising a silica source and a carbonaceous material to a temperature of 1300 to 2000 ° C. in an inert atmosphere to convert it into a silicon carbide powder by a reducing carbonization reaction of the silica source, wherein the silica source is colloidal. Using silica as a carbonaceous material, a carbon content of 99% or more, a sulfur content of 0.2% or less, and a BET specific surface area of 80 m 2 / g or less, DBP
Particulate silicon carbide characterized by using carbon black having a particle property with an oil absorption amount of 60 ml / 100 g or more and setting the composition of the mixed raw material within the range of 1.6 to 2.2 in terms of C / SiO 2 molar ratio. Manufacturing method.
【請求項2】 遊離炭素量2%未満、残留SiO2 量1
%未満で粒子径1μm 以下の炭化珪素を生成させ、未反
応成分を除去するための後処理を施さずに製品化する請
求項1記載の微粒子炭化珪素の製造方法。
2. Free carbon amount less than 2%, residual SiO 2 amount 1
The method for producing fine particle silicon carbide according to claim 1, wherein silicon carbide having a particle diameter of 1 μm or less is produced in an amount of less than 1%, and the product is commercialized without post-treatment for removing unreacted components.
JP43A 1992-11-26 1992-11-26 Method for producing fine particle silicon carbide Pending JPH06166510A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP43A JPH06166510A (en) 1992-11-26 1992-11-26 Method for producing fine particle silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43A JPH06166510A (en) 1992-11-26 1992-11-26 Method for producing fine particle silicon carbide

Publications (1)

Publication Number Publication Date
JPH06166510A true JPH06166510A (en) 1994-06-14

Family

ID=18331475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43A Pending JPH06166510A (en) 1992-11-26 1992-11-26 Method for producing fine particle silicon carbide

Country Status (1)

Country Link
JP (1) JPH06166510A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011019054A1 (en) * 2009-08-13 2011-02-17 信越化学工業株式会社 Method for producing silicon carbide
WO2012015208A3 (en) * 2010-07-26 2012-04-19 Lg Innotek Co., Ltd. Silicon carbide and method for manufacturing the same
KR101296840B1 (en) * 2011-02-11 2013-08-14 (주)석경에이티 Preparation method of monodispersed silica microparticles with high purity
JP2013532626A (en) * 2010-07-30 2013-08-19 エルジー イノテック カンパニー リミテッド Silicon carbide and method for producing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011019054A1 (en) * 2009-08-13 2011-02-17 信越化学工業株式会社 Method for producing silicon carbide
JP2011037675A (en) * 2009-08-13 2011-02-24 Shin-Etsu Chemical Co Ltd Method for producing silicon carbide
CN102482102A (en) * 2009-08-13 2012-05-30 信越化学工业株式会社 Method For Producing Silicon Carbide
WO2012015208A3 (en) * 2010-07-26 2012-04-19 Lg Innotek Co., Ltd. Silicon carbide and method for manufacturing the same
JP2013532626A (en) * 2010-07-30 2013-08-19 エルジー イノテック カンパニー リミテッド Silicon carbide and method for producing the same
KR101296840B1 (en) * 2011-02-11 2013-08-14 (주)석경에이티 Preparation method of monodispersed silica microparticles with high purity

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