JPH06122566A - Joining method - Google Patents
Joining methodInfo
- Publication number
- JPH06122566A JPH06122566A JP14974893A JP14974893A JPH06122566A JP H06122566 A JPH06122566 A JP H06122566A JP 14974893 A JP14974893 A JP 14974893A JP 14974893 A JP14974893 A JP 14974893A JP H06122566 A JPH06122566 A JP H06122566A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- glass
- thin film
- magnetic head
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Magnetic Heads (AREA)
Abstract
(57)【要約】
【目的】 接合部の空隙の発生を防止し、その接合強度
を良好なものとする。
【構成】 少なくとも一方の被接合体の接合面に薄膜が
形成されてなる一対の被接合体を、ガラスを介して接合
する接合方法において、高温等方加圧雰囲気中で接合を
行う。またこの時、上記薄膜がスパッタリング法により
形成されていても良く、薄膜がガラスと接触する構成で
あっても良い。(57) [Summary] [Purpose] To prevent the formation of voids in the joint and to improve the joint strength. According to a joining method of joining a pair of objects to be joined each having a thin film formed on a joining surface of at least one object to be joined via glass, the joining is performed in a high temperature isotropically pressurized atmosphere. At this time, the thin film may be formed by a sputtering method, or the thin film may be in contact with glass.
Description
【0001】[0001]
【産業上の利用分野】本発明は、少なくとも一方の被接
合体の接合面にスパッタリング法等により薄膜が形成さ
れてなる一対の被接合体を、ガラスを介して接合する接
合方法に係わるものであり、詳細には上記薄膜と接する
ガラス中の気泡の発生を抑制する接合方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a joining method for joining a pair of articles to be joined, each of which has a thin film formed on the joining surface of at least one article to be joined, by a sputtering method or the like through glass. In particular, the present invention relates to a bonding method for suppressing the generation of bubbles in the glass in contact with the thin film.
【0002】[0002]
【従来の技術】近年、磁気記録の分野においては、高密
度記録化が要求されており、これに対応すべく、例えば
約1μm以下の狭ギャップ長を有する磁気ヘッドが要求
されている。上記磁気ヘッドは、フェライト等の磁性体
により構成される一対の磁気コアをSiO2 、ガラス等
の非磁性材料を介し、磁気ギャップを有して接合して形
成されるものであり、該磁気ギャップには上記非磁性材
料が配されている。2. Description of the Related Art In recent years, in the field of magnetic recording, high density recording has been demanded, and in order to meet this demand, a magnetic head having a narrow gap length of, for example, about 1 μm or less is required. The magnetic head is formed by joining a pair of magnetic cores made of a magnetic material such as ferrite with a magnetic gap through a non-magnetic material such as SiO 2 or glass. The above-mentioned non-magnetic material is arranged in.
【0003】このような磁気ヘッドを形成するには、先
ず接合させる一対の磁気コアの突き合わせ面に所望のギ
ャップ長を形成できるようなギャップ膜をSiO2 、ガ
ラス等の非磁性材を用い、スパッタリング法等の方法に
より形成する。その後、上記一対の磁気コアを互いに突
き合わせ熱圧着することにより接合一体化する。この
時、接合部である磁気コアの突き合わせ面間に非磁性材
の配された磁気ギャップが形成される。なお、上記のよ
うな磁気ヘッドにおいては磁気ギャップ近傍に補強ガラ
スを充填し補強することが一般に行われる。[0003] In such a form the magnetic head, a gap layer, such as first form the desired gap length in the abutting surfaces of the pair of magnetic cores to be joined with SiO 2, a non-magnetic material such as glass, sputtering It is formed by a method such as a method. After that, the pair of magnetic cores are butted against each other and thermocompression-bonded to be integrated. At this time, a magnetic gap in which a non-magnetic material is arranged is formed between the abutting surfaces of the magnetic core that is the joint. In the magnetic head as described above, reinforcing glass is generally filled and reinforced near the magnetic gap.
【0004】[0004]
【発明が解決しようとする課題】ところが、上述のよう
な方法で形成される磁気ヘッドの磁気ギャップ及び磁気
ギャップ近傍に充填される補強ガラス中には空隙が発生
し易いという問題が生じている。これは、以下の理由に
よるものと思われる。例えば、ギャップ膜を少なくとも
ガラスを含む構成とした場合には、熱圧着時には接合す
る磁気コアを上記ガラス(以下、ギャップガラスと称す
る)の軟化点以上に昇温する。しかしながら、この時ギ
ャップ膜を形成するギャップガラスまたはSiO2 膜の
形成時にこれらに混入されたスパッターガスが上記ギャ
ップガラス膜内で気泡となり、これがギャップガラスの
冷却後も磁気ギャップ内に空隙として残存するためであ
ると思われる。また、磁気ギャップ近傍に充填されるガ
ラス(以下、補強ガラスと称する)は前記SiO2 、ギ
ャップガラス膜上に該ガラスよりも低い粘度(約1/1
000)で流される。従って、補強ガラス内にはギャッ
プ膜中に含まれるスパッターガスがより顕著に気泡とし
て発生し、空隙を形成する。However, there is a problem that voids are easily generated in the magnetic gap of the magnetic head formed by the above method and in the reinforcing glass filled in the vicinity of the magnetic gap. This is probably due to the following reasons. For example, when the gap film is configured to include at least glass, the magnetic core to be joined during thermocompression bonding is heated to a temperature equal to or higher than the softening point of the glass (hereinafter referred to as gap glass). However, at this time, the sputter gas mixed into the gap glass or the SiO 2 film forming the gap film becomes bubbles in the gap glass film, which remain as voids in the magnetic gap even after cooling the gap glass. It seems to be because of it. Further, the glass filled in the vicinity of the magnetic gap (hereinafter referred to as “reinforced glass”) has the above-mentioned SiO 2 , and the viscosity on the gap glass film lower than that of the glass (about 1/1).
000). Therefore, the sputter gas contained in the gap film is more remarkably generated as bubbles in the reinforcing glass to form voids.
【0005】前述のように磁気ヘッド中の磁気ギャップ
は非常に小さく、上記のような空隙が磁気ギャップ内に
発生すると、磁気ギャップの比較的大きな部分を占める
こととなり、磁気ギャップの接合強度を低下させてしま
うばかりか、磁気ギャップのギャップ長等の精度も低下
させてしまう。また、この空隙が媒体走行面に残存する
と、媒体表面より剥がれた磁性粉が詰まり、クロッグ不
良等を引き起こす。さらに、この空隙はクラックの起点
ともなり、得られる磁気ヘッドの品質の低下を招いてい
る。一方、補強ガラス内の空隙は、ヘッドチップの強度
低下、上述のクロッグ不良等の不具合を引き起こす。こ
のような空隙の発生を減少させるには、成膜時のスパッ
ター条件、接合時の温度条件や時間を厳しく制御する必
要があり、生産性が非常に悪い。As described above, the magnetic gap in the magnetic head is very small, and if the above-mentioned air gap is generated in the magnetic gap, it will occupy a relatively large portion of the magnetic gap, thus lowering the bonding strength of the magnetic gap. Not only will this cause the accuracy of the gap length of the magnetic gap, etc., to also decrease. Further, when the voids remain on the medium running surface, the magnetic powder peeled from the medium surface is clogged and causes a clog defect or the like. Further, this void also becomes a starting point of cracks, which causes deterioration of the quality of the obtained magnetic head. On the other hand, the voids in the reinforcing glass cause problems such as a decrease in the strength of the head chip and the above-mentioned clog failure. In order to reduce the generation of such voids, it is necessary to strictly control the sputtering conditions during film formation, the temperature conditions during bonding, and the time, resulting in extremely poor productivity.
【0006】そこで、上記のように磁気ヘッドの磁気ギ
ャップに残存する空隙を除去する方法として、特公昭6
1−16752号や特開昭63−170280号に示さ
れるように、磁気コアの接合後に高温等方加圧雰囲気中
で熱処理を施す、すなわち高圧の不活性ガス中でガラス
の軟化点以上の温度で熱処理を施して、上記空隙を形成
する気泡を押し潰して消失させる方法が提案されてい
る。さらに前者の方法においては、磁気コアの接合時に
ガラスを溶融させた後に不活性ガスを導入し、発生した
気泡を押し潰す方法も提案されている。Therefore, as a method for removing the air gap remaining in the magnetic gap of the magnetic head as described above, Japanese Patent Publication No.
As disclosed in JP-A-1-16752 and JP-A-63-170280, heat treatment is performed in a high temperature isotropically pressurized atmosphere after joining magnetic cores, that is, at a temperature above the softening point of glass in a high-pressure inert gas. There is proposed a method in which the bubbles forming the voids are crushed and eliminated by performing a heat treatment in (1). Further, in the former method, there is also proposed a method of melting the glass at the time of joining the magnetic cores and then introducing an inert gas to crush the generated bubbles.
【0007】ところが、このような方法により磁気ギャ
ップ内の空隙を除去しようとすると、ギャップガラスの
粘度が高いために該ギャップガラス内に残存する気泡の
内圧は非常に高く、高温等方加圧雰囲気中での熱処理に
よって気泡を消失させるには40.5MPa以上の高圧
が必要であり、生産性が良好でない。また、上記方法に
よると加熱処理を少なくとも2度行う必要があり、この
点からも生産性が良好ではなく、磁気特性にも好ましく
ない影響を与えることが多い。さらに、気泡の消失に伴
って磁気ヘッド全体に圧縮応力がかかり、これによるク
ラックが発生し易い、上記方法では周囲がガラスで囲ま
れていない気泡、たとえば磁気コア突き合わせ面に沿っ
て発生した気泡などにおいては、該気泡が閉空間ではな
いため等方加圧の効果はなく、高圧をかけても気泡を消
失させることができないといった不都合も生じる。However, if the air gap in the magnetic gap is to be removed by such a method, the internal pressure of the bubbles remaining in the gap glass is very high because of the high viscosity of the gap glass, and the high temperature isotropically pressurized atmosphere. A high pressure of 40.5 MPa or more is required to eliminate the bubbles by the heat treatment in the inside, and the productivity is not good. Further, according to the above method, it is necessary to perform the heat treatment at least twice, and from this point as well, the productivity is not good and the magnetic characteristics are often adversely affected. Furthermore, as the bubbles disappear, compressive stress is applied to the entire magnetic head, which tends to cause cracks. In the above method, bubbles are not surrounded by glass, for example, bubbles generated along the magnetic core butting surface. In this case, since the bubble is not a closed space, there is no effect of isotropic pressurization, and there is a disadvantage that the bubble cannot be eliminated even when high pressure is applied.
【0008】そこで本発明は、接合部に空隙を生ずるこ
とがなく、良好な接合強度を有して接合を行うことの可
能な接合方法を提供することを目的とする。[0008] Therefore, an object of the present invention is to provide a joining method capable of performing joining with good joining strength without forming voids in the joining portion.
【0009】[0009]
【課題を解決するための手段】少なくとも一方の被接合
体の接合面に薄膜が形成されてなる一対の被接合体を、
ガラスを介して接合する接合方法において、高温等方加
圧雰囲気中で接合を行うことを特徴とするものである。A pair of objects to be joined, in which a thin film is formed on the joining surface of at least one object to be joined,
In the joining method of joining via glass, the joining is performed in a high temperature isotropically pressurized atmosphere.
【0010】また、上記のような接合方法において、薄
膜がスパッタリング法により形成されている、または上
記薄膜がガラスと接触する構成であることを特徴とする
ものである。Further, in the bonding method as described above, the thin film is formed by a sputtering method, or the thin film is in contact with glass.
【0011】[0011]
【作用】ガラスを介して接合される被接合体が、接合面
にスパッタリング等により形成された薄膜を有し、これ
がガラスと接触・接合する構成である場合、接合の際、
薄膜形成時に該薄膜中に含まれるスパッターガスによる
気泡が上記ガラス内に発生し易く、冷却後に空隙を生じ
易い。When the object to be bonded through the glass has a thin film formed by sputtering or the like on the bonding surface and is configured to contact and bond with the glass, when bonding,
Bubbles due to the sputtering gas contained in the thin film are likely to be generated in the glass when forming the thin film, and voids are likely to be generated after cooling.
【0012】本発明においては、少なくとも一方の被接
合体の接合面に薄膜が形成されてなる一対の被接合体
を、ガラスを介して接合する接合方法において、高温等
方加圧雰囲気中で接合を行うため、薄膜中に含まれるス
パッターガスによる気泡がガラス内に形成されにくい。According to the present invention, in a joining method of joining a pair of objects to be joined, each of which has a thin film formed on the joining surface of at least one of the objects to be joined, through glass, the joining is performed in a high temperature isotropically pressurized atmosphere. Therefore, bubbles due to the sputter gas contained in the thin film are not easily formed in the glass.
【0013】[0013]
【実施例】以下、本発明を適用する具体的な実施例につ
いて、図面を参照しながら説明する。実施例 1 本実施例においては、磁気ヘッドの磁気コア同士の接
合,磁気ギャップの形成を本発明を適用した接合方法に
より行った例を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Specific embodiments to which the present invention is applied will be described below with reference to the drawings. Example 1 This example shows an example in which the magnetic cores of the magnetic head are bonded to each other and the magnetic gap is formed by a bonding method to which the present invention is applied.
【0014】本実施例において形成される磁気ヘッド
は、図1に示すように磁性体よりなる一対の磁気コア
1,2がフロントギャップである磁気ギャップg1 とバ
ックギャップである磁気ギャップg2 を有して突き合わ
され接合一体化されたものであり、各磁気コア1,2に
は、磁気ヘッド8のトラック幅を規制するH溝3,4お
よび磁気コア1,2のガラス融着およびコイル巻回用の
巻線溝5,6が形成されており、該巻線溝5,6間には
補強ガラス7が充填され、磁気コア1,2を接合一体化
している。この時、磁気コア1,2の接合,磁気ギャッ
プg1 ,g2 の形成を本実施例の接合方法によって行
う。In the magnetic head formed in this embodiment, as shown in FIG. 1, a pair of magnetic cores 1 and 2 made of a magnetic material has a magnetic gap g 1 which is a front gap and a magnetic gap g 2 which is a back gap. The magnetic cores 1 and 2 are abutted with each other and joined together, and the H-grooves 3 and 4 for controlling the track width of the magnetic head 8 and the glass fusion and coil winding of the magnetic cores 1 and 4 are provided on the magnetic cores 1 and 2. Revolving winding grooves 5 and 6 are formed, and a reinforcing glass 7 is filled between the winding grooves 5 and 6 to integrally join the magnetic cores 1 and 2. At this time, the magnetic cores 1 and 2 are joined and the magnetic gaps g 1 and g 2 are formed by the joining method of this embodiment.
【0015】以下に、上記の磁気ヘッドの製造方法を述
べる。先ず、図2に示すようにフェライト等の磁性材料
よりなるブロック9に、形成される磁気ヘッドのトラッ
ク幅を規制するH溝3,4を複数形成し、磁気コア間の
ガラス接合を行うための巻線溝5,6を形成する。次に
このブロック9を図中X−X’,Y─Y’にて分断し、
一対の磁気コアを形成する磁気コアブロック10,11
を得る。そして、磁気コアブロック10,11の磁気ギ
ャップ形成面10a,11aに、図3(図3には磁気コ
アブロック10を示す。)に示すようにスパッタリング
によりSiO2薄膜12を形成した後、ガラス転移点T
gが547℃であるガラス薄膜13を形成し、これらを
ギャップ膜とする。なお、得られる磁気ヘッドのギャッ
プ長が0.45μmとなるように、一方の磁気コアブロ
ックに形成されるSiO2 薄膜12とガラス薄膜13の
厚さの合計を0.225μm(ただし、ガラス膜13の
厚さを0.05μmとした)なるようにした。A method of manufacturing the above magnetic head will be described below. First, as shown in FIG. 2, a plurality of H grooves 3 and 4 for restricting the track width of a magnetic head to be formed are formed in a block 9 made of a magnetic material such as ferrite, and glass bonding between magnetic cores is performed. The winding grooves 5 and 6 are formed. Next, this block 9 is divided by XX 'and Y-Y' in the figure,
Magnetic core blocks 10 and 11 forming a pair of magnetic cores
To get Then, as shown in FIG. 3 (the magnetic core block 10 is shown in FIG. 3), the SiO 2 thin film 12 is formed on the magnetic gap forming surfaces 10 a, 11 a of the magnetic core blocks 10, 11 by sputtering, and then the glass transition is performed. Point T
A glass thin film 13 having g of 547 ° C. is formed, and these are used as a gap film. The total thickness of the SiO 2 thin film 12 and the glass thin film 13 formed on one of the magnetic core blocks is 0.225 μm (however, the glass film 13 is adjusted so that the obtained magnetic head has a gap length of 0.45 μm). Thickness was set to 0.05 μm).
【0016】次に、上述のようにして得られる磁気コア
ブロック10,11を接合して磁気ヘッドブロックを形
成する。そして、この際、本実施例の接合方法を適用す
る。すなわち、図4に示すように、H溝3,巻線溝5が
形成され、SiO2 薄膜12とガラス薄膜13の形成さ
れた磁気コアブロック10とH溝4,巻線溝6が形成さ
れ、SiO2 薄膜14とガラス薄膜15の形成された磁
気コアブロック11をガラス薄膜13,15を突き合わ
せるようにしてH溝3,4、巻線溝5,6の位置が一致
するように突き合わせ、巻線溝5,6にガラス転移点4
65℃である補強ガラス7を配する。そして、該磁気コ
アブロック10,11を治具により保持し、高温等方加
圧雰囲気中でガラス薄膜13,15の熱圧着及び補強ガ
ラス7の溶融充填を行なうものである。この時、磁気コ
アブロック10,11が接合されるとともに、ガラス薄
膜13,15の熱圧着により磁気コアブロック10,1
1間には磁気ギャップが形成されることとなる。Next, the magnetic core blocks 10 and 11 obtained as described above are joined to form a magnetic head block. Then, at this time, the joining method of the present embodiment is applied. That is, as shown in FIG. 4, the H groove 3 and the winding groove 5 are formed, the magnetic core block 10 on which the SiO 2 thin film 12 and the glass thin film 13 are formed, the H groove 4, and the winding groove 6 are formed. The magnetic core block 11 on which the SiO 2 thin film 14 and the glass thin film 15 are formed is butted so that the glass thin films 13 and 15 are butted against each other so that the positions of the H grooves 3 and 4 and the winding grooves 5 and 6 are made to coincide with each other. Glass transition point 4 in line grooves 5 and 6
The reinforcing glass 7 having a temperature of 65 ° C. is arranged. Then, the magnetic core blocks 10 and 11 are held by a jig, and thermocompression bonding of the glass thin films 13 and 15 and melt filling of the reinforcing glass 7 are performed in a high temperature isotropically pressurized atmosphere. At this time, the magnetic core blocks 10 and 11 are joined, and the magnetic core blocks 10 and 1 are bonded by thermocompression bonding of the glass thin films 13 and 15.
A magnetic gap is formed between the two.
【0017】この時の高温等方加圧雰囲気条件を図5に
示す。この時の高温等方加圧雰囲気条件は、図5に示さ
れるように不活性ガスの圧力が30.4MPaである雰
囲気中で室温から10.0℃/分の昇温速度で昇温さ
せ、不活性ガスの圧力60.8MPa,雰囲気温度75
0℃の条件下で1時間保持し、その後5.0℃/分の冷
却速度で冷却し、図5中Aで示す雰囲気温度が500℃
に達した時点よりガスの回収を行い、不活性ガスの圧力
が0.1MPa(大気圧),雰囲気温度が室温となるま
で冷却する。なお、圧着は不活性ガスの圧力60.8M
Pa,雰囲気温度750℃の条件下で1時間行う。The high temperature isotropically pressurized atmosphere conditions at this time are shown in FIG. The high temperature isotropic pressure atmosphere condition at this time is as follows: As shown in FIG. 5, the temperature is raised from room temperature to 10.0 ° C./min in an atmosphere where the pressure of the inert gas is 30.4 MPa. Inert gas pressure 60.8 MPa, atmospheric temperature 75
Hold at 0 ° C. for 1 hour, then cool at a cooling rate of 5.0 ° C./min, and the atmospheric temperature indicated by A in FIG. 5 is 500 ° C.
The gas is recovered from the point when the temperature reaches, and it is cooled until the pressure of the inert gas becomes 0.1 MPa (atmospheric pressure) and the atmospheric temperature becomes room temperature. The pressure of the inert gas is 60.8M.
It is carried out under the conditions of Pa and an atmospheric temperature of 750 ° C. for 1 hour.
【0018】そして、この磁気ヘッドブロックに必要な
研磨加工を施した後、チップ裁断を行い、図1に示すよ
うな磁気ヘッドを得た。この磁気ヘッドを実施サンプル
1とした。なお、高温等方加圧雰囲気条件は、昇温時か
ら冷却時の少なくとも使用するギャップガラスのガラス
転移点まで高圧雰囲気が保たれているものとする。Then, after subjecting the magnetic head block to necessary polishing, chip cutting was carried out to obtain a magnetic head as shown in FIG. This magnetic head was used as a practical sample 1. The high temperature isotropic pressure atmosphere condition is that the high pressure atmosphere is maintained at least from the temperature rise to the glass transition point of the gap glass used during cooling.
【0019】次に比較のためのサンプルを作製した。先
ず、実施サンプル1を形成した方法と同様の方法で一対
の磁気コアブロック上にスパッタリングによりSiO2
薄膜を形成しその上にガラス転移点が547℃であるガ
ラス薄膜を形成する。なお、得られる磁気ヘッドのギャ
ップ長が0.45μmとなるように、実施サンプル1と
同様にSiO2 薄膜とガラス薄膜の厚さの合計を0.2
25μmとした。次いで実施サンプル1と同様に一対の
磁気コアブロックを対向させ、その巻線溝中に補強ガラ
スを配し、加熱条件は実施サンプル1と同条件とし、大
気圧下で上記一対の磁気コアブロックの接合を行い、こ
れに研磨加工およびチップ裁断を行い、得られた磁気ヘ
ッドを比較サンプル1とした。Next, a sample for comparison was prepared. First, SiO 2 was sputtered on a pair of magnetic core blocks in the same manner as the method of forming the practical sample 1.
A thin film is formed and a glass thin film having a glass transition point of 547 ° C. is formed thereon. In addition, the total thickness of the SiO 2 thin film and the glass thin film was set to 0.2 in the same manner as in Working Example 1 so that the gap length of the obtained magnetic head was 0.45 μm.
It was set to 25 μm. Next, as in the case of the practical sample 1, a pair of magnetic core blocks are opposed to each other, a reinforcing glass is arranged in the winding groove, the heating conditions are the same as those of the practical sample 1, and the magnetic core blocks of the pair of magnetic core blocks are set under atmospheric pressure. Bonding was performed, and polishing processing and chip cutting were performed on this, and the obtained magnetic head was used as a comparative sample 1.
【0020】また、比較サンプル1と同様にSiO2 薄
膜を形成しその上にガラス転移点が547℃であるガラ
ス薄膜を形成した一対の磁気コアに、これら薄膜に含ま
れるスパッターガスを抜くために圧着温度と同じ温度に
てベーク処理を行った後、比較サンプル1と同条件で上
記一対の磁気コアブロックの接合を行い、研磨加工およ
びチップ裁断して得られた磁気ヘッドを比較サンプル2
とした。これら実施サンプル1および比較サンプル1,
2の実際のギャップ長とそのバラツキ(σ)、および磁
気ギャップ内の空隙と補強ガラス内の空隙の有無を調査
した結果を表1に示す。In order to remove the sputter gas contained in a pair of magnetic cores on which a SiO 2 thin film was formed and a glass thin film having a glass transition point of 547 ° C. was formed on the SiO 2 thin film, as in Comparative Sample 1. After the baking treatment was performed at the same temperature as the pressure bonding temperature, the pair of magnetic core blocks were joined under the same conditions as the comparative sample 1, and the magnetic head obtained by polishing and chip cutting was used as a comparative sample 2.
And These execution sample 1 and comparative sample 1,
Table 1 shows the results of an examination of the actual gap length of No. 2 and its variation (σ), and the presence / absence of voids in the magnetic gap and in the reinforcing glass.
【0021】[0021]
【表1】 [Table 1]
【0022】表1の結果を見てわかるように、磁気コア
ブロックの接合を高温等方加圧雰囲気中で行った実施サ
ンプル1においては、磁気ギャップ及び補強ガラス内に
空隙が存在せず、精度の良好なギャップ長が得られた。
これは、接合を高温等方加圧雰囲気中で行ったため、ス
パッター膜(SiO2 12,14及びガラス薄膜13,
15)中に含まれるスパッターガスが気泡を形成しにく
いためと思われる。なお、接合強度も良好であった。As can be seen from the results shown in Table 1, in the practical sample 1 in which the magnetic core blocks were joined in a high temperature isotropically pressurized atmosphere, there was no void in the magnetic gap and the reinforced glass, and the accuracy was high. A good gap length was obtained.
This is because the bonding was performed in a high temperature isotropically pressurized atmosphere, so that the sputtered films (SiO 2 12, 14 and glass thin film 13,
It is considered that the sputter gas contained in 15) hardly forms bubbles. The bonding strength was also good.
【0023】一方、磁気コアブロックの接合を大気圧中
で行った比較サンプル1,2においては、磁気ギャップ
及び補強ガラス内に空隙が存在し、ベーク処理を行なわ
ない比較サンプル1では磁気ギャップの精度も良好では
なかった。比較サンプル1においては、磁気コアブロッ
ク上にSiO2 薄膜およびガラス薄膜をスパッタリング
により形成した後、これら薄膜中のスパッターガス排出
のための処理を特には行っておらず、接合時にスパッタ
ーガスが気泡として発生しこれが空隙となり、ギャップ
長を変動させてしまったものと思われる。比較サンプル
2においては、ベーク処理により薄膜中のスパッターガ
スはある程度排出されるものの、完全には排出されない
ため、やはり接合時にガラス中に気泡となって若干発生
するものと思われる。また、比較サンプル2においては
熱処理を2度行なうことから、薄膜が厚さ方向に収縮
し、ギャップ長が成膜厚よりも薄くなること、ベーク処
理のための加熱炉への出し入れの際の薄膜表面へのゴミ
の付着が懸念される。On the other hand, in Comparative Samples 1 and 2 in which the magnetic core blocks were joined under atmospheric pressure, the magnetic gap was present in the reinforcing glass, and in Comparative Sample 1 in which no baking treatment was performed, the accuracy of the magnetic gap was high. Was not good either. In Comparative Sample 1, after the SiO 2 thin film and the glass thin film were formed on the magnetic core block by sputtering, no treatment for discharging the sputter gas in these thin films was carried out. It is thought that this occurred and became voids, which caused the gap length to fluctuate. In Comparative Sample 2, although the sputter gas in the thin film was discharged to some extent by the baking treatment, it was not completely discharged, and therefore it is considered that air bubbles were slightly generated in the glass during bonding. Further, in Comparative Sample 2, since the heat treatment is performed twice, the thin film shrinks in the thickness direction, the gap length becomes thinner than the film formation thickness, and the thin film at the time of putting in and out of the heating furnace for the baking treatment. There is concern that dust may adhere to the surface.
【0024】本実施例の接合方法によって磁気ヘッドの
磁気ギャップの熱圧着及び補強ガラスの溶融充填を行え
ば、磁気ギャップ中及び補強ガラス中に空隙を生ずるこ
となく良好な精度を有する磁気ギャップを形成するこが
でき、良好な接合強度をもって接合を行なうことができ
る。さらに、ベーク処理を行わなくて済むため、熱処理
は1回で良く、工程の効率向上及びヘッドコアに対する
ダメージの軽減をすることができる。If the magnetic gap of the magnetic head is subjected to thermocompression bonding and the reinforcing glass is melt-filled by the joining method of this embodiment, a magnetic gap having good accuracy can be formed without generating voids in the magnetic gap and the reinforcing glass. Therefore, the bonding can be performed with good bonding strength. Further, since the bake treatment is not required, the heat treatment only needs to be performed once, and the process efficiency can be improved and damage to the head core can be reduced.
【0025】上記の磁気ヘッドにおいては、図6に示す
ようにギャップ膜をSiO2 薄膜12,14とガラス薄
膜13,15によって構成するものとし、磁気コア同士
の接合をガラス薄膜13,15の熱圧着と補強ガラス7
の溶融充填により行うものとしたが、本発明の接合方法
は上述のような磁気ヘッドの他に次に述べるような磁気
ヘッドにおける磁気コア同士の接合或いは磁気ギャップ
の形成にも適用可能である。In the above magnetic head, as shown in FIG. 6, the gap film is composed of the SiO 2 thin films 12 and 14 and the glass thin films 13 and 15, and the magnetic cores are bonded to each other by heating the glass thin films 13 and 15. Crimping and tempered glass 7
However, the joining method of the present invention can be applied to the joining of magnetic cores or the formation of a magnetic gap in a magnetic head as described below in addition to the above-described magnetic head.
【0026】例えば、図7に示すようなギャップ膜をS
iO2 薄膜12,14によって構成し、磁気コア同士の
接合を補強ガラス7の溶融充填のみによって行っている
磁気ヘッドにも適用可能であり、本発明の接合方法によ
って磁気コア同士の接合を行うと、補強ガラス7内のS
iO2 薄膜12,14に含まれるスパッターガスによる
空隙の発生を防止することができる。また、図8,図9
に示すような、磁気コアがフェライト等の磁性材料より
なる磁気コアブロック10,11上に金属磁性膜16,
17が形成されたものであり、これら金属磁性膜16,
17を突き合わせるようにして接合一体化されている、
いわゆるMIGヘッドにおいても適用可能である。な
お、図8はギャップ膜がSiO2 薄膜12,14とガラ
ス薄膜13,15によって構成されたもの、図9はギャ
ップ膜がSiO2 薄膜12,14によって形成されたも
のを示す。For example, a gap film as shown in FIG.
The present invention is also applicable to a magnetic head which is composed of the iO 2 thin films 12 and 14 and whose magnetic cores are joined only by melting and filling the reinforcing glass 7. When the magnetic cores are joined by the joining method of the present invention, , S in the tempered glass 7
It is possible to prevent the generation of voids due to the sputtering gas contained in the iO 2 thin films 12 and 14. In addition, FIG.
On the magnetic core blocks 10 and 11 whose magnetic cores are made of a magnetic material such as ferrite as shown in FIG.
17 are formed, and these metal magnetic films 16,
It is joined and integrated so that 17 is abutted,
It is also applicable to so-called MIG heads. 8 shows the gap film composed of the SiO 2 thin films 12 and 14 and the glass thin films 13 and 15, and FIG. 9 shows the gap film formed of the SiO 2 thin films 12 and 14.
【0027】実施例 2 本実施例は、薄膜磁気ヘッドのガード材を本発明の接合
方法により接合した例について述べる。本実施例によっ
て形成される薄膜磁気ヘッドは図10に示すように、磁
気回路24の形成された薄膜磁気ヘッドチップ21にガ
ード材22がガラス23により接合されてなるものであ
る。上記薄膜磁気ヘッドチップ21は、板状のフェライ
ト等の磁性材料により形成されており、その一主面21
aに薄膜よりなる磁気回路24が形成され、媒体摺動面
21bには円筒研磨がなされている。一方のガード材2
2は板状のフォトセラム等の非磁性体よりなりその一主
面22aには溝部25が形成され、媒体摺動面22bに
は円筒研磨が施されている。上記薄膜磁気ヘッドチップ
21とガード材22は、薄膜磁気ヘッドチップ21の一
主面21aとガード材22の一主面22aを対向面と
し、磁気回路24の端末部以外をガード材22が覆うよ
うな形でガラス23を介して接合されている。 Example 2 This example describes an example in which the guard material of the thin film magnetic head is joined by the joining method of the present invention. As shown in FIG. 10, the thin film magnetic head formed according to this embodiment has a thin film magnetic head chip 21 in which a magnetic circuit 24 is formed and a guard material 22 bonded by glass 23. The thin film magnetic head chip 21 is made of a magnetic material such as a plate-shaped ferrite, and has one main surface 21.
A magnetic circuit 24 made of a thin film is formed on a, and the medium sliding surface 21b is cylindrically polished. One guard material 2
Reference numeral 2 is made of a non-magnetic material such as a plate-shaped photoceram and has a groove 25 formed on one main surface 22a thereof, and a medium sliding surface 22b is cylindrically polished. The thin-film magnetic head chip 21 and the guard material 22 have one main surface 21a of the thin-film magnetic head chip 21 and one main surface 22a of the guard material 22 as opposite surfaces, and the guard material 22 covers the magnetic circuit 24 except the end portion. It is joined through the glass 23 in an arbitrary shape.
【0028】以下に上記の薄膜磁気ヘッドの製造方法を
述べる。先ず、図11に示すようにフェライト等のブロ
ック26上に図示しない磁気回路をスパッタリング等に
より形成し、これをチップ切断し、図12に示すような
一主面21aに薄膜よりなる磁気回路24の形成された
薄膜磁気ヘッドチップ21を得る。次に、図13に示す
ように、フォトセラム等により形成される基板27の一
主面27aに所定の大きさ,間隔で複数の溝部25を形
成し、基板27の一主面27aに図示しないガラス棒を
配し、これに加熱を行いガラスパックした後、所定の厚
さになるように研磨を行い、図14に示すように基板2
7の一主面27aに接合材としてガラス転移点Tgが4
02℃であるガラス23を形成する。なお、本実施例に
おいてはガラス23をガラスパックによって形成した
が、スパッタリング等の手法によって形成しても良い。A method of manufacturing the above thin film magnetic head will be described below. First, as shown in FIG. 11, a magnetic circuit (not shown) is formed on a block 26 of ferrite or the like by sputtering or the like, and this is cut into chips, and a magnetic circuit 24 made of a thin film is formed on one main surface 21a as shown in FIG. The formed thin film magnetic head chip 21 is obtained. Next, as shown in FIG. 13, a plurality of groove portions 25 are formed in one main surface 27a of the substrate 27 made of photoceram or the like at a predetermined size and at intervals, and the one main surface 27a of the substrate 27 is not shown. After disposing a glass rod and heating it to pack the glass, polishing is performed so as to have a predetermined thickness, and the substrate 2 is formed as shown in FIG.
7 has a glass transition point Tg of 4 as a bonding material on one main surface 27a.
A glass 23 having a temperature of 02 ° C. is formed. Although the glass 23 is formed by the glass pack in this embodiment, it may be formed by a method such as sputtering.
【0029】この後、チップ切断を行い図15に示すよ
うな一主面に溝部25が形成されガラス23の形成され
るガード材22を得る。そして、図16に示すように薄
膜磁気ヘッドチップ21とガード材22を対向させ、治
具28によって保持し加圧加熱処理を施してガラス23
の熱圧着によりこれらの接合を行い、それぞれの媒体摺
動面21b,22bに円筒研磨を施し、図10に示すよ
うな薄膜磁気ヘッドを得る。After that, chip cutting is performed to obtain a guard material 22 having a groove 25 formed on one main surface and glass 23 as shown in FIG. Then, as shown in FIG. 16, the thin-film magnetic head chip 21 and the guard material 22 are opposed to each other, and are held by a jig 28 and subjected to a pressure and heat treatment to make the glass 23
These are joined by thermocompression bonding and the medium sliding surfaces 21b and 22b are cylindrically polished to obtain a thin film magnetic head as shown in FIG.
【0030】この時、本実施例においては、薄膜磁気ヘ
ッドチップとガード材の接合を高温等方加圧雰囲気中で
行う。この時の高温等方加圧雰囲気条件を図17に示
す。この時の高温等方加圧雰囲気条件は、図17に示さ
れるように不活性ガスの圧力が30.4MPaである雰
囲気中で室温から5.0℃/分の昇温速度で昇温させ、
不活性ガスの圧力を54.7MPa,雰囲気温度585
℃中で1時間保持し、その後3.0℃/分の冷却速度で
冷却し、図17中Bで示す雰囲気温度が340℃に達し
た時点よりガスの回収を行い、不活性ガスの圧力が約
0.1MPa(大気圧),雰囲気温度が室温となるまで
冷却する。なお、圧着は、不活性ガスの圧力を54.7
MPa,雰囲気温度585℃中で1時間行った。このよ
うにして薄膜磁気ヘッドチップ21とガード材22をガ
ラス23の熱圧着によって接合して得た薄膜磁気ヘッド
を実施サンプル2とする。At this time, in this embodiment, the thin film magnetic head chip and the guard material are joined in a high temperature isotropically pressurized atmosphere. The high temperature isotropically pressurized atmosphere conditions at this time are shown in FIG. The high temperature isotropic pressure atmosphere condition at this time is as follows. As shown in FIG. 17, the temperature is increased from room temperature at a temperature increase rate of 5.0 ° C./min in an atmosphere where the pressure of the inert gas is 30.4 MPa.
Inert gas pressure 54.7 MPa, atmospheric temperature 585
Hold for 1 hour at 0 ° C, then cool at a cooling rate of 3.0 ° C / min, and recover the gas from the time when the ambient temperature shown by B in Fig. 17 reaches 340 ° C. Cool to about 0.1 MPa (atmospheric pressure) until the ambient temperature reaches room temperature. In addition, the pressure of the inert gas was 54.7.
It was carried out for 1 hour in MPa and an ambient temperature of 585 ° C. The thin film magnetic head obtained by joining the thin film magnetic head chip 21 and the guard material 22 by thermocompression bonding of the glass 23 in this manner is referred to as a practical sample 2.
【0031】また、比較のために、実施サンプル2と同
様の方法で薄膜磁気ヘッドチップを形成し、ガード材に
ガラス転移点Tgが402℃であるガラス薄膜を形成
し、これらを大気圧中で580℃,30分の条件下(た
だし、昇温冷却速度は実施例1と同じ。)で加熱加圧処
理を施してガラスの熱圧着による接合を行い薄膜磁気ヘ
ッドを得、これを比較サンプル3とした。さらに、比較
サンプル3と同様に薄膜磁気ヘッドチップを形成し、こ
れに圧着温度よりも低めの温度でベーク処理を施した
後、比較サンプル3と同様にガラス膜が形成されたガー
ド材と共に、大気圧中で加熱加圧処理を施して接合を行
ない、薄膜磁気ヘッドを得た。この時の圧着条件が58
5℃,1時間のものを比較サンプル4、580℃,30
分のものを比較サンプル5とした。(ただし、昇温冷却
速度は実施例2と同じ。)なお、上記比較サンプル5の
圧着条件は、信頼できる接合強度が得られる最低温度及
び時間とした。For comparison, a thin film magnetic head chip was formed by the same method as that of the practical sample 2, and a glass thin film having a glass transition point Tg of 402 ° C. was formed on the guard material, and these were formed under atmospheric pressure. A thin film magnetic head was obtained by carrying out heating and pressure treatment under the conditions of 580 ° C. and 30 minutes (however, the temperature rising and cooling rate is the same as in Example 1) and thermocompression bonding of glass to obtain a thin film magnetic head. And Further, a thin film magnetic head chip was formed in the same manner as in Comparative Sample 3, and a baking treatment was applied to the thin film magnetic head chip at a temperature lower than the pressure bonding temperature. A thin film magnetic head was obtained by performing heating and pressure treatment in atmospheric pressure to perform bonding. The crimping condition at this time is 58
5 ℃, 1 hour comparison sample 4, 580 ℃, 30
The minute one was designated as Comparative Sample 5. (However, the heating / cooling rate is the same as that in Example 2.) The pressure bonding conditions for the comparative sample 5 were the minimum temperature and time for obtaining reliable bonding strength.
【0032】そして、これら実施サンプル2、比較サン
プル3,4,5の空隙不良率を調査した。結果を表2に
示す。なお、上記薄膜磁気ヘッドチップにおいてはスパ
ッタリングによって形成される薄膜に含まれるスパッタ
ーガス抜きの効果を得るためには圧着温度以上でベーク
することが望ましいが、異種材質の薄膜の多層構造で磁
気回路を構成しているため、たとえば、熱圧着温度と同
じ580℃でベーク処理を行なうと膜剥がれが起き易
い。そこで、ここでは安全な520℃でベーク処理する
こととした。Then, the void defect rates of these practical sample 2 and comparative samples 3, 4 and 5 were investigated. The results are shown in Table 2. In the thin film magnetic head chip, it is desirable to bake above the pressure bonding temperature in order to obtain the effect of removing the sputter gas contained in the thin film formed by sputtering, but a magnetic circuit with a multilayer structure of thin films of different materials is used. Since it is configured, if the baking process is performed at 580 ° C. which is the same as the thermocompression bonding temperature, film peeling easily occurs. Therefore, here, it is decided to perform the baking treatment at 520 ° C., which is safe.
【0033】[0033]
【表2】 [Table 2]
【0034】表2を見てわかるように、薄膜磁気ヘッド
チップおよびガード材に脱ガスのための処理を特に施し
ていない比較例3においては、薄膜磁気ヘッドチップ上
に形成される磁気回路をスパッタリング等により形成す
る際に磁気回路中に含まれるスパッターガス(たとえば
アルゴンガス)等が熱圧着時にガラス中に気泡として発
生し、空隙として残存するために、空隙不良率が高くな
っている。As can be seen from Table 2, in Comparative Example 3 in which the thin film magnetic head chip and the guard material were not particularly treated for degassing, the magnetic circuit formed on the thin film magnetic head chip was sputtered. Since the sputter gas (eg, argon gas) contained in the magnetic circuit is formed as bubbles in the glass during thermocompression bonding and remains as voids, the void defect rate is high.
【0035】このような空隙が薄膜磁気ヘッドの媒体走
行面に存在すると、媒体より剥がれ落ちた磁性粉が詰ま
り、クロッグ不良等を引き起こし易く、品質の低下を招
き、製造歩留りの低下も引き起こす。If such voids are present on the medium running surface of the thin film magnetic head, the magnetic powder that has peeled off from the medium is clogged, which easily causes clog defects and the like, which leads to deterioration in quality and a decrease in manufacturing yield.
【0036】また、薄膜磁気ヘッドチップに脱ガスのた
めにベーク処理を施した比較サンプル4,5において
は、圧着温度を下げ、圧着時間を短縮することにより空
隙不良率を低下させることができることが確認された
が、空隙不良率が圧着条件によって大きく変化してお
り、圧着条件の設定にかなりの精度が要求されることが
わかった。すなわち、上記薄膜磁気ヘッドチップとガー
ド材を接合する際には、ガラスは薄膜磁気ヘッドチップ
の磁気回路の形状に応じて変形する必要があるため、圧
着条件にはかなりの精度が要求される。また、上記比較
サンプル4,5においては、圧着温度よりも低い温度で
ベーク処理を行なっていることから、磁気回路中に含ま
れるスパッターガスが十分に排気されていないことも推
察される。さらに、前述のようにサンプル5の圧着条件
は、信頼できる接合強度が得られる最低温度及び時間で
あるが、それでも空隙不良は20%発生した。すなわ
ち、ベーク処理及び圧着条件のコントロールだけではこ
れ以上の空隙不良の低減は望めない。Further, in Comparative Samples 4 and 5 in which the thin film magnetic head chip was baked for degassing, the void defect rate can be lowered by lowering the pressure bonding temperature and shortening the pressure bonding time. Although it was confirmed, the void defect rate greatly changed depending on the crimping condition, and it was found that considerable accuracy was required for setting the crimping condition. That is, when joining the thin film magnetic head chip and the guard material, the glass needs to be deformed in accordance with the shape of the magnetic circuit of the thin film magnetic head chip, so that the pressure bonding condition requires a considerable degree of accuracy. Further, in the above Comparative Samples 4 and 5, since the baking treatment is performed at a temperature lower than the pressure bonding temperature, it is presumed that the sputter gas contained in the magnetic circuit is not sufficiently exhausted. Further, as described above, the pressure bonding condition of Sample 5 is the minimum temperature and time at which reliable bonding strength can be obtained, but still 20% of void defects occurred. That is, further reduction of void defects cannot be expected only by controlling the baking treatment and the pressure bonding conditions.
【0037】一方、薄膜磁気ヘッドチップとガード材の
接合を高温等方加圧雰囲気中で行った実施サンプル2に
おいては、ベーク処理がなくても空隙不良率が0%とな
った。これは、薄膜磁気ヘッドチップ上に形成される磁
気回路をスパッタリング等により形成する際に磁気回路
中に含まれるガス(たとえばアルゴンガス)が、熱圧着
時に高圧下では気泡を形成することができず、空隙が生
じないためと思われる。従って、実施サンプル2におい
ては、空隙不良率の圧着条件への依存性は少なく、圧着
条件にあまり精度を必要としないため、生産性を大きく
向上させることができる。また、実施サンプル2におい
てはベーク処理も不要であり熱処理は1回で済み、工程
の効率向上及び磁性特性へのダメージの低減、膜剥がれ
が生じない、などの利点もある。上記高温等方加圧雰囲
気の条件は、本実施例で述べたような条件に限られるも
のではなく、圧着温度付近でスパッターガスの気泡形成
を困難にする条件であれば良く、ガラスの種類によって
異なるが、圧着温度が580℃以下であれば、30MP
a程度で効果がある。また、初期圧は10MPa程度以
上あれば良い。また、このようにして得られた薄膜磁気
ヘッドにおいては、クラックの発生,材料の変化,特性
の劣化,膜ハガレ等も発生せず品質の良好な薄膜磁気ヘ
ッドを得ることができた。特に薄膜磁気ヘッドのような
異種物質を多数積層して組み合わせたものにおいては、
複数回の熱処理は好ましくなく、本実施例は適している
と思われる。On the other hand, in the practical sample 2 in which the thin film magnetic head chip and the guard material were joined in a high temperature isotropically pressurized atmosphere, the void defect rate was 0% even without the baking treatment. This is because the gas (eg, argon gas) contained in the magnetic circuit when forming the magnetic circuit formed on the thin-film magnetic head chip by sputtering cannot form bubbles under high pressure during thermocompression bonding. It seems that there are no voids. Therefore, in the implementation sample 2, the dependency of the void defect rate on the pressure bonding condition is small and the pressure bonding condition does not require high precision, so that the productivity can be greatly improved. Further, in the practical sample 2, the bake treatment is not necessary and the heat treatment is only required once, and there are advantages that the efficiency of the process is improved, damage to the magnetic properties is reduced, and film peeling does not occur. The conditions of the high temperature isotropically pressurized atmosphere are not limited to the conditions described in the present embodiment, but may be any conditions that make it difficult to form bubbles of sputter gas near the pressure bonding temperature, depending on the type of glass. 30MP if the pressure bonding temperature is 580 ℃ or less
It is effective at about a. The initial pressure may be about 10 MPa or more. Further, in the thin film magnetic head thus obtained, a good quality thin film magnetic head could be obtained without generation of cracks, material changes, deterioration of characteristics, film peeling and the like. Especially in the case where a large number of different materials such as thin film magnetic heads are laminated and combined,
Multiple heat treatments are not preferred and this example appears to be suitable.
【0038】本実施例の接合方法により薄膜磁気ヘッド
チップとガード材の接合を行うと、接合部に空隙を残存
させることなく接合を行うことが可能であり、品質の良
好な薄膜磁気ヘッドを得ることができる。また、圧着条
件に依存することなく良好な接合を行うことが可能であ
るため、圧着条件の許容範囲が広く、生産性も良好であ
る。When the thin film magnetic head chip and the guard material are joined by the joining method of the present embodiment, it is possible to join without leaving a void in the joined portion, and a thin film magnetic head of good quality is obtained. be able to. Further, since good bonding can be performed without depending on the crimping condition, the permissible range of the crimping condition is wide and the productivity is also good.
【0039】[0039]
【発明の効果】以上の説明からも明らかなように、本発
明においては、少なくとも一方の被接合体の接合面にス
パッタリング法により形成された薄膜が形成されてなる
一対の被接合体をガラスを介して接合する接合方法にお
いて、高温等方加圧雰囲気中で接合を行うため、薄膜に
含まれるスパッターガスによる気泡が形成されにくく、
このため薄膜と接するガラス内に空隙が生じにくく、良
好な接合強度を有して接合を行うことが可能である。As is apparent from the above description, in the present invention, a pair of objects to be bonded, each of which has a thin film formed by the sputtering method on the bonding surface of at least one of the objects to be bonded, is made of glass. In the joining method of joining via, since the joining is performed in a high temperature isotropically pressurized atmosphere, it is difficult for bubbles to be formed by the sputter gas contained in the thin film,
Therefore, voids are unlikely to occur in the glass that is in contact with the thin film, and it is possible to perform bonding with good bonding strength.
【0040】さらに、本発明においては、被接合物の薄
膜に含まれるスタッパーガス等の成膜ガスにより発生し
てしまった気泡を消失させるための再度の熱処理を必要
とせず、また被接合物にベーク処理等の脱ガス処理を予
め行う必要もなく、圧着条件に左右されることなく良好
な接合を行うことができる。また、従来のように接合部
分に発生する気泡を圧力により消失させる必要がないた
め、比較的低圧での処理が可能で、気泡を消失させる場
合のように被接合物に変形や割れが生じない。さらにベ
ーク処理等の脱ガス処理を予め行う必要がないことか
ら、薄膜磁気ヘッドのような異種物質を多数、積層、組
み合わせた構造の被接合物の接合も可能である。従っ
て、本発明は様々な分野での応用が可能であり、その工
業的価値は非常に高い。Further, according to the present invention, it is not necessary to perform the heat treatment again for eliminating the bubbles generated by the film forming gas such as the stutter gas contained in the thin film of the object to be joined, and the object to be joined is not required. Moreover, it is not necessary to previously perform degassing treatment such as baking treatment, and good bonding can be performed without being affected by pressure bonding conditions. In addition, since it is not necessary to eliminate the bubbles generated in the joint by pressure as in the conventional case, it is possible to perform processing at a relatively low pressure, and the objects to be joined are not deformed or cracked as in the case of eliminating the bubbles. . Further, since it is not necessary to perform degassing treatment such as baking treatment in advance, it is possible to join objects to be joined having a structure in which a large number of different substances such as a thin film magnetic head are laminated and combined. Therefore, the present invention can be applied in various fields and its industrial value is very high.
【図1】本発明を適用した接合方法により磁気コア同士
の接合,磁気ギャップの形成を行った磁気ヘッドの一例
を示す斜視図である。FIG. 1 is a perspective view showing an example of a magnetic head in which magnetic cores are joined together and a magnetic gap is formed by a joining method to which the present invention is applied.
【図2】本発明を適用した接合方法を用い磁気ヘッドを
製造する製造方法を工程順に示すものであり、ブロック
にH溝,巻線溝を形成し、一対の磁気コアブロックに分
断する工程を示す斜視図である。FIG. 2 shows a manufacturing method for manufacturing a magnetic head using a joining method to which the present invention is applied, showing a step of forming an H groove and a winding groove in a block and dividing into a pair of magnetic core blocks. It is a perspective view shown.
【図3】磁気コアブロックにSiO2 薄膜,ガラス薄膜
を形成する工程を示す斜視図である。FIG. 3 is a perspective view showing a process of forming a SiO 2 thin film and a glass thin film on a magnetic core block.
【図4】一対の磁気コアブロックを接合する工程を示す
斜視図である。FIG. 4 is a perspective view showing a step of joining a pair of magnetic core blocks.
【図5】磁気コアブロックを接合する際の高温等方加圧
雰囲気条件を示す図である。FIG. 5 is a diagram showing a high temperature isotropically pressurized atmosphere condition when joining the magnetic core blocks.
【図6】図1の磁気ヘッドの磁気記録媒体対向面近傍部
を示す模式図である。6 is a schematic diagram showing a portion of the magnetic head of FIG. 1 in the vicinity of a surface facing a magnetic recording medium.
【図7】本発明を適用した接合方法により磁気コア同士
の接合,磁気ギャップの形成を行った磁気ヘッドの他の
例の磁気記録媒体対向面近傍部を示す模式図である。FIG. 7 is a schematic diagram showing a portion in the vicinity of a magnetic recording medium facing surface of another example of a magnetic head in which magnetic cores are joined and a magnetic gap is formed by a joining method to which the present invention is applied.
【図8】本発明を適用した接合方法により磁気コア同士
の接合,磁気ギャップの形成を行った磁気ヘッドのさら
に他の例の磁気記録媒体対向面近傍部を示す模式図であ
る。FIG. 8 is a schematic view showing a portion near a magnetic recording medium facing surface of still another example of a magnetic head in which magnetic cores are bonded to each other and a magnetic gap is formed by a bonding method to which the present invention is applied.
【図9】本発明を適用した接合方法により磁気コア同士
の接合,磁気ギャップの形成を行った磁気ヘッドのさら
に他の例の磁気記録媒体対向面近傍部を示す模式図であ
る。FIG. 9 is a schematic diagram showing a portion near a magnetic recording medium facing surface of still another example of a magnetic head in which magnetic cores are bonded to each other and a magnetic gap is formed by a bonding method to which the present invention is applied.
【図10】本発明を適用した接合方法によりガード材の
接合を行った薄膜磁気ヘッドを示す斜視図である。FIG. 10 is a perspective view showing a thin film magnetic head in which a guard material is joined by a joining method to which the present invention is applied.
【図11】本発明を適用した接合方法によりガード材の
接合を行った薄膜磁気ヘッドを製造する製造方法を工程
順に示すものであり、ブロックに磁気回路を形成する工
程を示す斜視図である。FIG. 11 shows a manufacturing method for manufacturing a thin film magnetic head in which guard materials are bonded by a bonding method to which the invention is applied, in the order of steps, and is a perspective view showing a step of forming a magnetic circuit in a block.
【図12】ブロックをチップ切断し、薄膜磁気ヘッドチ
ップを形成する工程を示す斜視図である。FIG. 12 is a perspective view showing a process of cutting a block into chips to form a thin film magnetic head chip.
【図13】基板に溝部を形成する工程を示す斜視図であ
る。FIG. 13 is a perspective view showing a step of forming a groove on a substrate.
【図14】基板上にガラス膜を形成する工程を示す側面
図である。FIG. 14 is a side view showing a step of forming a glass film on a substrate.
【図15】基板をチップ切断し、ガード材を形成する工
程を示す斜視図である。FIG. 15 is a perspective view showing a step of cutting a substrate into chips to form a guard material.
【図16】薄膜磁気ヘッドチップとガード材を接合する
工程を示す側面図である。FIG. 16 is a side view showing a step of joining a thin film magnetic head chip and a guard material.
【図17】薄膜磁気ヘッドチップとガード材を接合する
際の高温等方加圧雰囲気条件を示す図である。FIG. 17 is a view showing a high temperature isotropically pressurized atmosphere condition when joining the thin film magnetic head chip and the guard material.
1,2・・・・・・磁気コア 10,11・・・・磁気コアブロック 10a,11a・・ギャップ形成面 12,14・・・・SiO2 薄膜 13,15・・・・ガラス薄膜 21・・・・・・・薄膜磁気ヘッドチップ 22・・・・・・・ガード材 23・・・・・・・ガラス 27・・・・・・・ブロック1, 2, ... Magnetic cores 10, 11, ... Magnetic core blocks 10a, 11a .. Gap forming surface 12, 14 ... SiO 2 thin film 13, 15 ... Glass thin film 21.・ ・ ・ ・ ・ ・ Thin film magnetic head chip 22 ・ ・ ・ ・ Guard material 23 ・ ・ ・ Glass 27 ・ ・ ・ Block
Claims (3)
膜が形成されてなる一対の被接合体を、ガラスを介して
接合する接合方法において、高温等方加圧雰囲気中で接
合を行うことを特徴とする接合方法。1. A bonding method for bonding a pair of objects to be bonded, each having a thin film formed on the bonding surface of at least one object to be bonded, via glass, in a high temperature isotropically pressurized atmosphere. Joining method characterized by.
ていることを特徴とする請求項1記載の接合方法。2. The bonding method according to claim 1, wherein the thin film is formed by a sputtering method.
を特徴とする請求項2記載の接合方法。3. The bonding method according to claim 2, wherein the thin film is in contact with glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14974893A JPH06122566A (en) | 1992-08-31 | 1993-05-31 | Joining method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25597192 | 1992-08-31 | ||
| JP4-255971 | 1992-08-31 | ||
| JP14974893A JPH06122566A (en) | 1992-08-31 | 1993-05-31 | Joining method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06122566A true JPH06122566A (en) | 1994-05-06 |
Family
ID=26479531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14974893A Pending JPH06122566A (en) | 1992-08-31 | 1993-05-31 | Joining method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06122566A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4879991A (en) * | 1986-11-12 | 1989-11-14 | Olympus Optical Co., Ltd. | Endoscope |
| US11214518B2 (en) | 2015-10-20 | 2022-01-04 | Hilti Aktiengesellschaft | Fastening system and use thereof |
-
1993
- 1993-05-31 JP JP14974893A patent/JPH06122566A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4879991A (en) * | 1986-11-12 | 1989-11-14 | Olympus Optical Co., Ltd. | Endoscope |
| US11214518B2 (en) | 2015-10-20 | 2022-01-04 | Hilti Aktiengesellschaft | Fastening system and use thereof |
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