JPH06120287A - Semiconductor device using lead frame and manufacturing method thereof - Google Patents

Abstract

(57) [Abstract] [Purpose] To provide a wire bonding method in a relay bonding method for reducing the bonding time, cost and productivity. [Structure] An electrode pad 2 on an IC chip 1 mounted on a substrate 3 made of resin (insulator) is used as a first electrode, a relay point 4 on the substrate 3 is used as a second electrode, and an inner lead 5 is used. The third electrode is wire-bonded to connect the electrode pad 2 and the inner lead 5 to make them conductive. Here, ball bonding is performed on the electrode pad 2, the wire 7 is not cut at the relay point 4, stitch bonding is performed, and the wire continues to draw a loop until it reaches the inner lead 5 and stitches on the inner lead 5. Bonding is performed and the wire is cut. [Effect] By providing the groove at the relay point, the fixing force of the bonding point from the external force can be increased and the quality can be maintained between the steps.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connection technique by wire bonding.

[0002]

2. Description of the Related Art Conventionally, a single wire is used to connect an electrode of an IC chip and an inner lead of a lead frame.
A ball bonding method in which ball bonding is performed with electrodes of the chip and stitch bonding is performed on the inner lead side, and a wedge bonding method in which wedge bonding is performed with the electrodes of the IC chip and the inner leads are widely used.

In recent years, the number of electrodes and the number of terminals on the frame side have been increasing due to high integration and multi-functionalization of IC chips, but as is well known, miniaturization on the IC chip side is relatively easy. Although it is advanced and can cope with the increase in the number of electrodes,
Regarding the increase of inner leads in the lead frame, due to the limitation of etching and stamping processing technology for the material thickness of the frame, it is not possible to respond to the miniaturization of IC chips, and the inner leads are placed away from the IC chips. I have to do it.

Therefore, when the conventional bonding method is used, it is necessary to connect the electrode of the IC chip and the inner lead with a long wire, and wire bending and slack, which are problems due to the long wire, occur. It was difficult to maintain satisfactory wire bonding quality. Therefore, the limitation of the wire length imposes a limitation on the reduction of the IC chip size.

Therefore, for example, as shown in FIG. 6, a relay bonding method has been devised and adopted in which a metal layer is provided in the relay area 8 between the electrode 2 of the IC chip 1 and the inner lead 5 and is connected by two wires 7. Is being done.

The relay bonding method has made it possible to meet the above-mentioned problems by using the existing wire bonding technology capable of ensuring stable quality.

[0007]

In the conventional relay bonding method, it is possible to easily cope with an increase in the number of electrodes and the number of terminals by using the existing wire bonding capable of ensuring stable quality and achieve the original purpose. did it.

However, the wire bonding has to be carried out twice and the wire bonding time is required to be twice as long as the normal time, resulting in an increase in cost and a decrease in productivity.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a wire bonding method which solves the above problems of the prior art, shortens the bonding time, reduces the cost and improves the productivity.

[0010]

In order to solve the above problems and achieve the above objects, the semiconductor device of the present invention has a die pad formed of a resin, and a means for providing a relay bonding portion in the resin portion is adopted. Take measures to make things and grooves.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 1, 2 and 3 are views of the essential parts for explaining an embodiment of the present invention by a connection method using a ball bonding method. The electrode pad 2 on the IC chip 1 mounted on the substrate 3 made of resin (insulator) is used as the first electrode,
The electrode pad 2 is formed by wire bonding the substrate 3 as the second electrode and the inner lead 5 as the third electrode.
And the inner lead 6 are connected to each other for electrical connection. Here, ball bonding is performed on the electrode pad 2, the wire is not cut at the relay point 4, and the wire is subjected to a pressing condition such that the wire and the relay point are fixed to each other, and stitch bonding is performed to form a loop of the wire as it is. The feature of this method is to continue drawing to the inner lead 5, stitch stitching is performed on the inner lead 5, the wire is cut, a ball for the next ball bonding is formed, and the rest of the subsequent bonding is repeated. Is.

As a concrete method of mounting the substrate on the lead frame, as shown in FIG. 3, the resin substrate 3 covers up to the tab suspension leads of the inner leads 6 and the IC chip 1
The IC chip is mounted by cutting the part where is mounted. The sectional view of FIG. 3 is as shown in FIG.

An enlarged view of the second electrode in FIG. 1 is shown in FIG. A groove 9 for a relay point is provided on the resin substrate 3, and a capillary 10 is pushed into that portion to mechanically fix the wire. Since this method has sufficient adhesion strength against an external force to move the wire to some extent, an external force applied between the wire bonding process and the molding process, such as handling in the wire appearance inspection process or handling in the molding process. , Has sufficient resistance to external forces that try to remove sticking at the relay point. It can be said that the purpose of this adhesion is sufficiently effective because the adhesion is maintained until the molding step.

[0014]

By using the semiconductor device of the present invention, it is possible to shorten the bonding time in the conventional relay bonding method. Further, by providing the groove at the relay point, it is possible to increase the fixing force of the bonding point from the external force and maintain the quality between the steps.

[0015]

[Brief description of drawings]

FIG. 1 is a diagram of a main part (viewed from above) explaining a connection method using a ball bonding method according to an embodiment of the present invention.

FIG. 2 is a sectional view of FIG.

FIG. 3 is an enlarged view of a bonding portion of FIG.

FIG. 4 is a sectional view of FIG.

FIG. 5 is a view in which a groove is provided at a relay point of the present invention and a wire is pressed therein.

FIG. 6 is a diagram showing a conventional relay bonding.

[Explanation of symbols]

 1 IC Chip 2 Electrode Pad 3 Substrate 4 Relay Point 5 Inner Lead 6 Die Pad 7 Wire 8 Relay Board 9 Groove 10 Capillary

Claims (3)

[Claims] 1. A resin-sealed semiconductor device in which a semiconductor chip and an inner lead arranged around the chip of the semiconductor device are bonded to the semiconductor chip and the inner lead by a wire, and a die pad is formed of resin. A semiconductor device using a lead frame which is characterized in that 2. A resin-sealed semiconductor device in which an inner lead arranged around a semiconductor chip and a chip of a semiconductor device and a semiconductor chip and an inner lead are bonded by a wire, and a die pad is formed of resin. A method of manufacturing a semiconductor device using a lead frame, which is characterized in that 3. A semiconductor device using a lead frame, wherein a groove for relay bonding is provided on a die pad of the lead frame of the semiconductor device according to claim 1.