JPH06117935A - Ellipsometer - Google Patents
EllipsometerInfo
- Publication number
- JPH06117935A JPH06117935A JP33214192A JP33214192A JPH06117935A JP H06117935 A JPH06117935 A JP H06117935A JP 33214192 A JP33214192 A JP 33214192A JP 33214192 A JP33214192 A JP 33214192A JP H06117935 A JPH06117935 A JP H06117935A
- Authority
- JP
- Japan
- Prior art keywords
- light
- sample
- incident
- lens
- sample surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
(57)【要約】
【目的】偏光解析装置の小形化を計る。
【構成】直線偏光の平行光束を開口数の大きいレンズで
試料面に集光させ、試料面からの反射光を上記レンズを
通して平行光束とし、検光子を通して二次元解像性の光
検出器で検出する。
【作用】平行直線偏光光束を開口数の大きなレンズで試
料面に集中させているので、照射光の照射角は広い範囲
で連続的に変化しており、試料反射光は入射光と同軸的
に取出し、検出しているので、装置が小型となる。
(57) [Abstract] [Purpose] To downsize the ellipsometer. [Structure] A parallel polarized parallel light beam is condensed on the sample surface by a lens with a large numerical aperture, reflected light from the sample surface is converted into a parallel light beam through the lens, and detected by a two-dimensional resolution photodetector through an analyzer. To do. [Function] Since the parallel linearly polarized light flux is concentrated on the sample surface by the lens having a large numerical aperture, the irradiation angle of the irradiation light continuously changes in a wide range, and the sample reflected light is coaxial with the incident light. Since it is taken out and detected, the device becomes small.
Description
【0001】[0001]
【産業上の利用分野】本発明は偏光解析装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ellipsometer.
【0002】[0002]
【従来の技術】従来の偏光解析装置は図5に示すような
ゴニオメータ型の構造であった。即ち、光源1と偏光子
2と1/4波長板3とよりなる光源部Aと、この光源部
Aの光軸と直交する回転軸を有する試料台4と、試料の
回転角に対して同じ軸によって二倍角だけ回転せしめら
れる腕5上に取付けられ光軸が試料面で光源部Aの光軸
と交わる光軸を有する検出部Bとよりなり、検出部Bは
検光子6と光検出器7とよりなっている。この装置は試
料台4を中心に考えると、試料台から光源部Aと検出部
Bが両側に突出しており、検出部Bが試料台を中心に回
動せしめられるので、検出部Bの掃過空間を確保してお
く必要があって、装置の全体が大きな場所を取る上、試
料への入射角を変えた測定を行う場合、試料台と検出器
とを回転させながら測定を繰り返す必要があって、測定
能率も低い。2. Description of the Related Art A conventional ellipsometer has a goniometer type structure as shown in FIG. That is, the light source unit A including the light source 1, the polarizer 2, and the quarter-wave plate 3, the sample stage 4 having the rotation axis orthogonal to the optical axis of the light source unit A, and the same with respect to the rotation angle of the sample The detection unit B is mounted on an arm 5 which is rotated by a double angle by an axis and has an optical axis whose optical axis intersects with the optical axis of the light source unit A on the sample surface. The detection unit B is an analyzer 6 and a photodetector. It consists of 7. Considering the sample table 4 as the center, this device has a light source section A and a detection section B protruding from both sides of the sample table, and the detection section B can be rotated around the sample table. It is necessary to secure a space, and the entire device requires a large space, and when performing measurements with different incident angles to the sample, it is necessary to repeat the measurement while rotating the sample table and detector. And the measurement efficiency is also low.
【0003】[0003]
【発明が解決しようとする課題】本発明は上述したよう
に従来の偏光解析装置が広い設置スペースを必要とし、
測定能率が低いと云う問題を有していたことと鑑み、小
型で測定能率の良い偏光解析装置を提供しようとするも
のである。As described above, the present invention requires a large installation space in the conventional ellipsometer,
In view of the fact that the measurement efficiency is low, the present invention intends to provide a small-sized polarization analyzer having good measurement efficiency.
【0004】[0004]
【課題を解決するための手段】図1に示すように試料S
面に垂直な光軸Z上に半透明鏡Hを斜めに挿入し、この
半透明鏡を貫通する上記光軸上か同半透明鏡で反射折曲
される光軸Y上の何れかに直線偏光の平行光束光源Gを
置き、他方に検光子Pと二次元画像分解能を有する受光
素子Dを置き、上記半透明鏡と試料との間に開口数の大
きなレンズLを置いて試料に入射する光束を試料面に集
光させるようにした。[Means for Solving the Problems] As shown in FIG.
A semitransparent mirror H is obliquely inserted on an optical axis Z perpendicular to the surface, and a straight line is formed either on the optical axis passing through the semitransparent mirror or on the optical axis Y reflected and bent by the semitransparent mirror. A polarized parallel light beam source G is placed, an analyzer P and a light-receiving element D having a two-dimensional image resolution are placed on the other side, and a lens L having a large numerical aperture is placed between the semitransparent mirror and the sample to enter the sample. The light flux was focused on the sample surface.
【0005】[0005]
【作用】装置光軸が試料面に垂直で試料面への入射光も
反射光もこの光軸に沿っており、試料への入射光軸と反
射光軸とが任意角度で交わる従来構成に比し、装置設置
スペースが著しく小さくでき、かつ平行光束を開口数の
大きなレンズで試料面に集光させているので、一度に色
々な入反射光の光を測定しているのと同じであり、試料
からの反射光束を二次元的解像力を持つ受光素子で検出
しているので、試料に対し色々な入反射角の光を同時測
定できるので、大変能率的となる。[Function] The optical axis of the device is perpendicular to the sample surface, and both incident light and reflected light on the sample surface are along this optical axis. Compared with the conventional configuration in which the incident optical axis to the sample and the reflected optical axis intersect at an arbitrary angle. However, the device installation space can be made extremely small, and since the parallel light flux is focused on the sample surface by a lens with a large numerical aperture, it is the same as measuring various incident / reflected light beams at one time. Since the reflected light flux from the sample is detected by the light receiving element having a two-dimensional resolution, the light having various incident and reflected angles with respect to the sample can be measured at the same time, which is very efficient.
【0006】[0006]
【実施例】図1は本発明装置の概要を示し、図2は具体
的な実施例を示す。まず図1について本発明の概要を説
明する。図でGは直線偏光の平行光束を発射する光源で
レーザが用いられている。光源Gの光軸Yは半透明鏡H
で反射されて試料Sの表面に垂直な光軸Xに沿い試料S
に入射せしめられる。試料の前面に開口数の大きなレン
ズLが配置されて光軸Xに沿い試料に入射せしめられる
直線偏光は試料面S上の一点0に集光せしめられる。レ
ンズLはNA=0.9で、試料への集光角αは64°で
あり、試料に入射する光は入射角が0°から64°の範
囲になる。試料からの反射光は入射光と同じ発散角64
°で0点から反射され、レンズLで平行光束となって光
軸Xに沿い上行し、半透明鏡Hを透過直進し、検光子P
を通って、CCDセルのような二次元的解像能力を有す
る受光素子Dに入射する。従ってCCDセルD上には入
射光束の断面である円形の光スポットが投射されてい
る。この光スポット内の照度は均一でなく、検光子Pを
回すと照度分布が変化する。この照度分布の変化を受光
素子Dで検出し解析することによって試料の偏光特性が
求められる。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an outline of the device of the present invention, and FIG. 2 shows a concrete embodiment. First, the outline of the present invention will be described with reference to FIG. In the figure, G is a light source that emits a linearly polarized parallel light beam, and a laser is used. The optical axis Y of the light source G is a semitransparent mirror H
Along the optical axis X which is reflected by and is perpendicular to the surface of the sample S.
Is made incident on. The linearly polarized light, which is arranged on the front surface of the sample and has a large numerical aperture and is incident on the sample along the optical axis X, is condensed at a point 0 on the sample surface S. The lens L has NA = 0.9, the light collection angle α to the sample is 64 °, and the light incident on the sample has an incident angle in the range of 0 ° to 64 °. The reflected light from the sample has the same divergence angle 64 as the incident light.
At 0 °, it is reflected from the 0 point, becomes a parallel light flux by the lens L, travels upward along the optical axis X, travels straight through the semitransparent mirror H, and passes through the analyzer P
Then, the light enters the light receiving element D having a two-dimensional resolution capability such as a CCD cell. Therefore, a circular light spot which is a cross section of the incident light beam is projected on the CCD cell D. The illuminance in this light spot is not uniform, and when the analyzer P is rotated, the illuminance distribution changes. The polarization characteristics of the sample can be obtained by detecting and analyzing the change in the illuminance distribution with the light receiving element D.
【0007】図3によって上述した装置の作用を説明す
る。図に示すようにX,Y,Z軸を決め、試料Sを照射
する平行光束の電場の振動方向をX方向とし、このよう
な直線偏光をレンズLで試料面に集光させる。そこで試
料面に立てたYZ平面内の試料入射光では入射光の振動
方向はYZ面に垂直で、試料面に対しては平行である。
試料面に対してこのような関係にある光をSpで表す。
次に試料面に立てたXZ面内の試料入射光はXZ面に垂
直な振動成分を持っていない。試料面に対してこのよう
な関係にある光をSsで表す。そうすると、XY軸に対
して45°の方向で試料面に垂直に立てた平面内の試料
入射光はSp成分とSs成分を持っている。従って直線
偏光の平行光束をレンズで試料面に集光させることで、
試料面に対し、色々な振動方向の光を入射させたのと同
じ効果つまり従来装置で試料に入射させる直線偏光の偏
光面を回転させるのと同じ効果と、試料への入反射角を
0からαまで変えるのと同じ効果を一度に得たことにな
る。The operation of the above-mentioned device will be described with reference to FIG. As shown in the figure, the X, Y, and Z axes are determined, the vibration direction of the electric field of the parallel light flux irradiating the sample S is set to the X direction, and such linearly polarized light is condensed on the sample surface by the lens L. Therefore, with respect to the sample incident light in the YZ plane standing on the sample surface, the vibration direction of the incident light is perpendicular to the YZ plane and parallel to the sample surface.
Light having such a relationship with the sample surface is represented by Sp.
Next, the sample incident light in the XZ plane standing on the sample surface does not have a vibration component perpendicular to the XZ plane. Light having such a relationship with the sample surface is represented by Ss. Then, the sample incident light in the plane standing upright to the sample surface in the direction of 45 ° with respect to the XY axes has the Sp component and the Ss component. Therefore, by concentrating a parallel light beam of linearly polarized light on the sample surface with a lens,
The same effect that light of various vibration directions is made incident on the sample surface, that is, the same effect as rotating the plane of linearly polarized light that is made incident on the sample with the conventional device, and the angle of incidence and reflection to the sample from 0 The same effect as changing to α is obtained at one time.
【0008】次に試料が光反射に対して全く偏光特性を
有さず、反射率が入反射角によって変わらないとする
と、試料からの反射光はレンズを通った後、入射光束と
全く同じ直線偏光の平行光束となって上向し、受光素子
に入射する。このとき受光素子の受光面の照射スポット
の照度分布は一様で、検光子Pの向きをX軸方向にした
とき全体が最も明るく、Pの向きをY軸方向にしたと
き、受光面の照光スポットは最低最高となる。試料面の
反射率がSp光もSs光も同じで、同じ入反射角依存性
を持っているときは、検光子Pの方向をXとしたときの
受光素子上の照光スポットの照度分布は中心対照的な形
となる。Next, assuming that the sample does not have any polarization characteristic for light reflection and the reflectance does not change depending on the incident / reflection angle, the reflected light from the sample passes through the lens and then is exactly the same as the incident light beam. It becomes a parallel light beam of polarized light, which is directed upward and is incident on the light receiving element. At this time, the illuminance distribution of the irradiation spot on the light receiving surface of the light receiving element is uniform, and the whole is brightest when the direction of the analyzer P is in the X-axis direction, and the illumination of the light receiving surface is when the direction of P is in the Y-axis direction. The spot is the lowest and highest. When the reflectance of the sample surface is the same for both Sp light and Ss light and has the same incident / reflection angle dependence, the illuminance distribution of the illumination spot on the light receiving element is the center when the direction of the analyzer P is X. It becomes a contrasting form.
【0009】一般に試料面からの反射光は偏光に関して
或る変化を受け、この変化によって試料表面の分析情報
が得られる。図3でXY軸と斜交する方向でかつ試料面
に垂直な面内の反射光は一般に回転偏光となり、その楕
円率や長軸方向の分布はX軸,Y軸に対して対称的であ
る。そこで受光素子上の照光スポットの照度分布は検光
子Pを回転させると変化する。図4に示すように照光ス
ポット上の座標x,yの点は図3で試料への入反斜面が
X軸に対しφの方向であり、入反射角αが tanα=r/F である光線の照光スポット上の入射点である。そしてこ
の光について楕円偏光の長軸方向は検光子Pを回して点
(x,y)の照度が最大になるときの検光子の方位であ
り、楕円率はこのときの点(x,y)の明るさと、検光
子をその方向から90°回したときの(x,y)点の照
度とから求まる。他方入射角α,入射方位φの入射光の
Sp成分とSs成分の比は図3を参照して計算で予め求
められるから、色々な偏光方向の光の色々な入射角での
偏光が試料から受ける変調の様子を定量的に求めること
ができる。Generally, the reflected light from the sample surface undergoes some change in polarization, and this change provides analytical information on the sample surface. In FIG. 3, reflected light in a plane that is oblique to the XY axes and perpendicular to the sample surface is generally rotationally polarized light, and its ellipticity and distribution in the major axis direction are symmetrical with respect to the X and Y axes. . Therefore, the illuminance distribution of the illuminated spot on the light receiving element changes when the analyzer P is rotated. As shown in FIG. 4, the point of coordinates x and y on the illumination spot is a ray whose incident / incline surface to the sample is in the direction of φ with respect to the X axis in FIG. 3 and whose incident / reflection angle α is tan α = r / F. Is the incident point on the illuminated spot of. The major axis direction of the elliptically polarized light of this light is the azimuth of the analyzer when the illuminance at the point (x, y) is maximized by rotating the analyzer P, and the ellipticity is the point (x, y) at this time. And the illuminance at the (x, y) point when the analyzer is rotated 90 ° from that direction. On the other hand, since the ratio of the Sp component and the Ss component of the incident light with the incident angle α and the incident azimuth φ is calculated in advance with reference to FIG. 3, the polarized light at various incident angles of light in various polarization directions is It is possible to quantitatively determine the state of the received modulation.
【0010】図2に示す実施例について詳述する。図1
の各部と対応する部分には同じ符号を付け、一々の説明
は省略する。10は4分割光電セルで、CCDセルDと
共に一つの摺動台11上に取付けられ、光軸Z上に交替
して出入させることができようになっている。4分割セ
ル10は試料Sの分析点における法線を光軸Zと一致さ
せるための基準装置用の受光素子でその中心を光軸Zが
通ようにしてある。この4分割セルの各セグメントの出
力は制御装置12に取り込まれ、制御装置は、4分割セ
ルの各セル出力が等しくなるように、試料台13のX方
向,Y方向の傾動モータ14X,14Yを駆動する。1
5は光軸Z上に出入自在な回転チョッパで、半径方向の
一つのスリットを有し、このスリットが光軸を横切ると
き、その長さ方向(つまりチョッパの半径方向)が4分
割セル10の分割線の一つの方向と一致するようにして
ある。このチョッパの下にはこのチョッパと一体的に光
軸Z上に出入されるレンズ16があり、チョッパ15と
レンズ16とはレンズLの焦点合わせのための用意であ
る。レンズLが合焦位置にあるとき、試料から反射して
来た平行光束がレンズ16によりチョッパ15上に集光
されるようにしてある。このようなレンズ16とチョッ
パ15を通った光束が4分割セル10に入射すると、レ
ンズLが合焦位置より上方にあるときと下方にあるとき
とで4分割セル面でのチョッパのスリットの影の移動の
方向が反対になる。従って4分割セルの相隣る二つのセ
グメントの出力を合わせて、4分割セルを2分割セルと
して扱うとき、チョッパ15のスリットが光軸Zを横切
るときの二分割セルからの出力パルスで何れのセグメン
トが先にパルスを出力するかでレンズLの合焦位置から
の外れ方向が分かる。制御装置12は4分割セルの各セ
グメント出力を取り込み、上述したデータ処理を行い、
4分割セル10を二分割セルとして扱うときの二つのセ
グメントの出力パルスの位相差が0になるようにレンズ
Lの駆動手段17を制御する。上述した二つの調整を完
了した後は4分割セル10もチョッパ15およびレンズ
16も光軸Z上から退避せしめられ、試料光束は二つの
半透明鏡BS1,BS2を経てY軸方向に進み、半透明
鏡Hで光軸Zに沿って試料Sに向かう。途中に光束径を
拡大するエキスパンダレンズ系18が配置されていて、
レーザ出射光束は適当な直径の平行光束に変換される。
試料からの反射光はZ軸に沿い上行してCCDセルDに
入射する。検光子Pはモータ19によって回転せしめら
れ、検光子Pの方位0から90°までの各角位置におけ
るCCDセルDの各画素の出力が制御装置12に読み込
まれ、制御装置12によって、そのデータ解析が行われ
る。The embodiment shown in FIG. 2 will be described in detail. Figure 1
The same reference numerals are given to the portions corresponding to the respective portions of, and the description thereof will be omitted. Reference numeral 10 denotes a four-division photoelectric cell, which is mounted on one sliding base 11 together with the CCD cell D so that it can be moved in and out on the optical axis Z in an alternating manner. The four-division cell 10 is a light receiving element for a reference device for matching the normal line at the analysis point of the sample S with the optical axis Z, and the optical axis Z passes through the center thereof. The output of each segment of the four-division cell is fetched by the control device 12, and the control device drives the tilt motors 14X, 14Y of the sample stage 13 in the X and Y directions so that the cell outputs of the four-division cell become equal. To drive. 1
Reference numeral 5 denotes a rotary chopper which can freely move in and out on the optical axis Z, and has one slit in the radial direction, and when this slit crosses the optical axis, the length direction (that is, the radial direction of the chopper) of the four-division cell 10 is. It is made to coincide with one direction of the dividing line. Under the chopper, there is a lens 16 which is put in and out on the optical axis Z integrally with the chopper, and the chopper 15 and the lens 16 are prepared for focusing the lens L. When the lens L is at the in-focus position, the parallel light flux reflected from the sample is condensed by the lens 16 on the chopper 15. When the light flux passing through the lens 16 and the chopper 15 is incident on the four-division cell 10, the shadow of the slit of the chopper on the four-division cell surface when the lens L is above and below the in-focus position. The directions of movement of are opposite. Therefore, when the outputs of two adjacent segments of the four-division cell are combined and the four-division cell is treated as a two-division cell, whichever output pulse from the two-division cell when the slit of the chopper 15 crosses the optical axis Z The direction in which the lens L deviates from the in-focus position can be known by whether the segment outputs a pulse first. The controller 12 takes in each segment output of the 4-division cell, performs the above-mentioned data processing,
The driving means 17 of the lens L is controlled so that the phase difference between the output pulses of the two segments becomes 0 when the 4-division cell 10 is treated as a 2-division cell. After completing the above-mentioned two adjustments, both the four-division cell 10, the chopper 15, and the lens 16 are retracted from the optical axis Z, and the sample light beam passes through the two semitransparent mirrors BS1 and BS2 in the Y axis direction, The transparent mirror H moves toward the sample S along the optical axis Z. An expander lens system 18 that expands the luminous flux diameter is arranged in the middle,
The laser light beam is converted into a parallel light beam having an appropriate diameter.
The reflected light from the sample travels upward along the Z axis and is incident on the CCD cell D. The analyzer P is rotated by the motor 19, and the output of each pixel of the CCD cell D at each angular position from the azimuth 0 to 90 ° of the analyzer P is read into the controller 12, and the controller 12 analyzes the data. Is done.
【0011】なお20は白色光源で試料面を照射し、試
料からの反射光が半透明鏡HでY軸方向に反射された
後、半透明鏡BS2,BS1を経て撮像カメラ21に入
射して試料面の像を形成し、この像がモニタCRT22
に表示されるようにしてあって、分析する者が試料面の
像を見ながら、分析点を選択できるようにしてある。A white light source 20 illuminates the sample surface, and the light reflected from the sample is reflected by the semitransparent mirror H in the Y-axis direction, and then enters the image pickup camera 21 via the semitransparent mirrors BS2 and BS1. An image of the sample surface is formed, and this image is displayed on the monitor CRT 22.
Is displayed so that the analyst can select an analysis point while looking at the image of the sample surface.
【0012】半透明鏡は偏光特性を持っているが、レー
ザ出射光の偏光方向(電場の振動方向)が半透明鏡Hの
面に対し平行或はそれと直交の方向であるようにしてお
くと、試料を照射する偏光は直線偏光のまゝであり、試
料照射光に対しては偏向的変調を受けてないようにする
ことができる。試料からの反射光はHを透過するので、
半透明鏡Hにより偏光的な変調を受ける。このため制御
装置12におけるデータ処理ではこの変調に対する補正
が必要である。この補正演算のためのデータは装置を組
み立てる前に半透明鏡Hに45°の入射角で円偏光を入
射させ、透過光の楕円偏光の長軸方向と、楕円率等を測
定しておくことによって得られる。The semi-transparent mirror has a polarization characteristic, but if the polarization direction of the laser emission light (the vibration direction of the electric field) is parallel to the plane of the semi-transparent mirror H or orthogonal to it. The polarized light that illuminates the sample is linearly polarized light, and it is possible to prevent the sample irradiation light from undergoing polarization modulation. Since the reflected light from the sample transmits H,
It is polarizedly modulated by the semitransparent mirror H. Therefore, in the data processing in the control device 12, correction for this modulation is necessary. Before assembling the device, the data for this correction calculation is to make circularly polarized light incident on the semitransparent mirror H at an incident angle of 45 °, and measure the major axis direction of the elliptically polarized light of the transmitted light and the ellipticity. Obtained by
【0013】[0013]
【発明の効果】本発明によれば試料への入射光束と反射
光束とが同軸になっており、試料への入射角を変えるた
めの可動部がないので、装置がコンパクトとなり、装置
設置スペースもせまくてよい。その上、色々な入反射角
でのデータが一度に得られるので、測定能率が高い。According to the present invention, the incident light beam to the sample and the reflected light beam are coaxial with each other, and since there is no movable part for changing the incident angle to the sample, the device is compact and the device installation space is also small. It's fine. In addition, data at various incident and reflection angles can be obtained at one time, so measurement efficiency is high.
【図1】本発明の概要説明図FIG. 1 is a schematic explanatory diagram of the present invention.
【図2】本発明の一実施例装置の側面図FIG. 2 is a side view of an apparatus according to an embodiment of the present invention.
【図3】本発明装置の作用説明図FIG. 3 is an explanatory view of the operation of the device of the present invention.
【図4】CCDセル上の受光スポットの平面図FIG. 4 is a plan view of a light receiving spot on a CCD cell.
【図5】従来装置の平面図FIG. 5 is a plan view of a conventional device.
S 試料 H 半透明鏡 G 直線偏光光源(レーザ) P 検光子 D 二次元的解像力を有する受光素子 L レンズ S sample H semi-transparent mirror G linearly polarized light source (laser) P analyzer D light receiving element having two-dimensional resolution L lens
Claims (1)
に挿入し、この半透明鏡を貫通する上記光軸上或は同半
透明鏡により反射折曲される光軸Y上の何れかに直線偏
光の平行光束光源を置き、他方の光軸上に検光子と二次
元的画像分解能を有する受光素子を置き、上記半透明鏡
と試料との間にレンズを置いて試料に入射する上記光源
からの平行光束を試料面上の一点に集光させるようにし
たことを特徴とする偏光解析装置。1. A semitransparent mirror is obliquely inserted on an optical axis Z perpendicular to the sample surface, and the optical axis Y is penetrated through the semitransparent mirror or is reflected and bent by the semitransparent mirror. Place a linearly polarized parallel-beam light source on any of the above, place an analyzer and a light receiving element having a two-dimensional image resolution on the other optical axis, and place a lens between the semitransparent mirror and the sample. An ellipsometer characterized in that a parallel light beam from the above-mentioned light source which is incident on the sample surface is condensed at one point on the sample surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33214192A JPH06117935A (en) | 1992-09-30 | 1992-09-30 | Ellipsometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33214192A JPH06117935A (en) | 1992-09-30 | 1992-09-30 | Ellipsometer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06117935A true JPH06117935A (en) | 1994-04-28 |
Family
ID=18251602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33214192A Pending JPH06117935A (en) | 1992-09-30 | 1992-09-30 | Ellipsometer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06117935A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6678046B2 (en) * | 2001-08-28 | 2004-01-13 | Therma-Wave, Inc. | Detector configurations for optical metrology |
-
1992
- 1992-09-30 JP JP33214192A patent/JPH06117935A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6678046B2 (en) * | 2001-08-28 | 2004-01-13 | Therma-Wave, Inc. | Detector configurations for optical metrology |
| US6836328B2 (en) | 2001-08-28 | 2004-12-28 | Therma-Wave, Inc. | Detector configurations for optical metrology |
| US6995842B2 (en) | 2001-08-28 | 2006-02-07 | Therma-Wave, Inc. | Detector configurations for optical metrology |
| US7206071B2 (en) | 2001-08-28 | 2007-04-17 | Therma-Wave, Inc. | Detector configurations for optical metrology |
| US7456964B2 (en) | 2001-08-28 | 2008-11-25 | Kla-Tencor Corporation | Detector configurations for optical metrology |
| US7667841B2 (en) | 2001-08-28 | 2010-02-23 | Kla-Tencor Corporation | Detector configurations for optical metrology |
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