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JPH06116711A - Method for forming alumina film - Google Patents

Method for forming alumina film

Info

Publication number
JPH06116711A
JPH06116711A JP28707392A JP28707392A JPH06116711A JP H06116711 A JPH06116711 A JP H06116711A JP 28707392 A JP28707392 A JP 28707392A JP 28707392 A JP28707392 A JP 28707392A JP H06116711 A JPH06116711 A JP H06116711A
Authority
JP
Japan
Prior art keywords
alumina
film
layer
torr
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28707392A
Other languages
Japanese (ja)
Inventor
Yuji Chiba
祐二 千葉
Shinichi Okabe
信一 岡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP28707392A priority Critical patent/JPH06116711A/en
Publication of JPH06116711A publication Critical patent/JPH06116711A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】 【目的】 密着力に優れ突沸粒子がない表面が平滑で硬
質の透明アルミナ膜の製膜方法を提供する。 【構成】 イオンプレーティング法で金属表面に蒸着材
料に融解で作成したアルミナを用い、第一層として1×
10-4Torrより低い圧力でアルミナを蒸着し、第二
層として1×10-4Torr〜1×10-3Torrにな
るように反応ガスとして酸素を導入した状態でアルミナ
を蒸着し、第一層、第二層を通してアルミナの製膜速度
を10μm/hr以下で保持する。
(57) [Summary] [Object] To provide a film forming method of a transparent alumina film which has excellent adhesion and is free from bumping particles and has a smooth surface and a hard surface. [Composition] Alumina prepared by melting was used as a vapor deposition material on the metal surface by the ion plating method, and 1 x was used as the first layer.
Alumina was vapor-deposited at a pressure lower than 10 -4 Torr, and alumina was vapor-deposited with oxygen introduced as a reaction gas so that the second layer was 1 × 10 -4 Torr to 1 × 10 -3 Torr. The alumina film formation rate is maintained at 10 μm / hr or less through the layer and the second layer.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は装飾用メッキなどの耐摩
耗透明保護膜及び金属材料での電気絶縁用のアルミナを
蒸着する方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wear-resistant transparent protective film such as a decorative plating and a method for depositing alumina for electrical insulation on a metal material.

【0002】[0002]

【従来の技術】アルミナ膜は装飾品や記録媒体の保護膜
として、また電気絶縁用の保護膜として用いられてい
る。記録媒体の保護膜の作製にはスパッタ法が用いられ
るが、装飾品などの場合は成膜速度が速いイオンプレー
ティング法が用いられる。アルミナ膜を装飾品などの金
属表面に製膜する方法として、例えば特開昭57−73
178に示されるように金属アルミニウムを酸素中に蒸
発させる反応性イオンプレーティング法が知られてい
る。しかし、この方法は製膜条件の幅が狭くその条件か
ら少しでも外れると膜が変色して透明性が得られなかっ
たり、未反応のアルミニウムが析出し電気絶縁性が損な
われる問題があった。これに対して、特開昭63−62
868に示されるようにアルミナを蒸着材として高周波
イオンプレーティング法により品質の安定したアルミナ
膜を製膜することが行われている。
2. Description of the Related Art Alumina films are used as protective films for ornaments and recording media, and also as protective films for electrical insulation. The sputtering method is used to form the protective film of the recording medium, while the ion plating method, which has a high film formation rate, is used in the case of ornaments and the like. As a method for forming an alumina film on the surface of a metal such as a decorative article, there is, for example, JP-A-57-73.
A reactive ion plating method is known in which metallic aluminum is vaporized in oxygen as shown in 178. However, this method has a problem that the range of film forming conditions is narrow, and if the condition is slightly deviated from the conditions, the film is discolored so that transparency cannot be obtained, or unreacted aluminum is deposited to impair electrical insulation. On the other hand, JP-A-63-62
As shown in 868, an alumina film having stable quality is formed by a high frequency ion plating method using alumina as a vapor deposition material.

【0003】[0003]

【発明が解決しようとする課題】アルミナを蒸発材料に
用いて、イオンプレーティング法によりアルミナ膜を製
膜すれば硬質で透明性、電気絶縁性に優れたアルミナ膜
を得ることができるが、従来の方法では密着力が低く、
使用中に剥がれ易いという問題点があった。また、蒸発
材料のアルミナに焼結アルミナを用いると、溶解中ガス
が発生しやすく、突沸が生じ基板表面にアルミナ粒子が
付着し表面荒れを起こすという問題があった。そこで、
本発明の目的は、密着力に優れ、突沸粒子のない、すな
わち表面が平滑な硬質で透明性のあるアルミナ膜の製膜
方法を提供することである。
If an alumina film is formed by an ion plating method using alumina as an evaporation material, it is possible to obtain a hard and excellent alumina film having excellent transparency and electric insulation. Method has low adhesion,
There was a problem that it easily peeled off during use. Further, if sintered alumina is used as the evaporation material alumina, a gas during melting is likely to be generated, and bumping occurs to cause alumina particles to adhere to the surface of the substrate, resulting in surface roughness. Therefore,
An object of the present invention is to provide a film forming method of an alumina film which has excellent adhesion and is free from bumping particles, that is, has a smooth and hard surface.

【0004】[0004]

【課題を解決するための手段】本発明は、上記課題を解
決する手段として、イオンプレーティング法により金属
表面にアルミナ被膜を製膜する際に、蒸着材料として溶
解により作製したアルミナ粒を用い、第一層として1×
10-4Torrより低い圧力でアルミナを蒸着し、その
後、第二層として真空槽内の圧力が1×10-4Torr
〜1×10-3Torrになるように反応ガスとして酸素
を導入した状態でアルミナを蒸着し、第一層、第二層を
通して、アルミナ膜の成膜速度を10μm/hr以下に
保持することに特徴がある。
Means for Solving the Problems As a means for solving the above problems, the present invention uses alumina particles produced by melting as a vapor deposition material when forming an alumina coating film on a metal surface by an ion plating method, 1x as the first layer
Alumina was vapor-deposited at a pressure lower than 10 -4 Torr, and then the pressure in the vacuum chamber as the second layer was 1 × 10 -4 Torr.
Alumina is vapor-deposited in a state where oxygen is introduced as a reaction gas so as to be up to 1 × 10 −3 Torr, and the deposition rate of the alumina film is maintained at 10 μm / hr or less through the first layer and the second layer. There are features.

【0005】[0005]

【作用】アルミナを蒸発材料として製膜したアルミナ被
膜の硬度、密着力、透明性は製膜条件に依存する。反応
ガスとして製膜中に導入した酸素の圧力が1×10-4
orrより低いと蒸発材のアルミナの分解により、アル
ミナ被膜中の酸素が不足し、化学組成からずれた被膜と
なり、アルミナ被膜の硬度はビッカース硬度でHv70
0以下になってしまう。Hv700以下では硬度が高い
金属材料と同程度である。1×10-4Torr以上でH
v700〜Hv1100の被膜が得られる。酸素圧を1
×10-3Torr以上にすると、蒸発材料溶解に用いる
電子銃のタングステンフィラメントや、基板加熱ヒータ
の急激な劣化を引き起こすので望ましくない。
Function: The hardness, adhesion, and transparency of the alumina coating formed by using alumina as an evaporation material depend on the film forming conditions. The pressure of oxygen introduced into the film formation as a reaction gas is 1 × 10 −4 T
If it is lower than orr, oxygen in the alumina coating becomes insufficient due to the decomposition of alumina of the evaporating material, resulting in a coating deviating from the chemical composition, and the hardness of the alumina coating is Vvs hardness of Hv70.
It becomes 0 or less. At Hv of 700 or less, the hardness is about the same as that of a metal material having high hardness. H above 1 × 10 -4 Torr
A film of v700 to Hv1100 is obtained. Oxygen pressure 1
When it is not less than × 10 -3 Torr, the tungsten filament of the electron gun used for melting the evaporation material and the substrate heater are rapidly deteriorated, which is not desirable.

【0006】SKH51及びSUS304基板に製膜し
たアルミナ被膜の密着力をスクラッチテスタ(LSRH
製REVETEST)で測定したところ、硬度の酸素圧
依存性とは反対に、酸素圧が1×10-4Torr未満で
10N以上の密着力が得られ、1×10-4Torr以上
では10N未満になってしまうことを見いだした。
[0006] The adhesion of the alumina coating formed on the SKH51 and SUS304 substrates is measured by the scratch tester (LSRH).
Was measured by manufacturing REVETEST), as opposed to the oxygen pressure dependency of hardness, the oxygen pressure is 10N or more adhesion was obtained with less than 1 × 10 -4 Torr, less than 10N in 1 × 10 -4 Torr or more I found that.

【0007】したがって、被膜硬度を低下させずに密着
力を向上させるためには、先ず第一層として1×10-4
Torrより低い圧力で酸素を導入しない状態でアルミ
ナを蒸着し、その後更に第二層として酸素を1×10-4
Torr〜1×10-3Torrになるように導入した状
態でアルミナを蒸着すれば、被膜硬度Hv700以上
で、密着力10N以上の硬質で密着性に優れた透明性ア
ルミナ膜を製膜することができる。第二層製膜中に酸素
圧が上記の圧力範囲内で変動しても、得られる被膜の特
性に変わりはない。
Therefore, in order to improve the adhesion without lowering the hardness of the coating film, first, 1 × 10 −4 is formed as the first layer.
Alumina was vapor-deposited at a pressure lower than Torr without introducing oxygen, and then oxygen was further added to the layer as 1 × 10 −4.
If alumina is vapor-deposited in a state of being introduced at Torr to 1 × 10 −3 Torr, a transparent and transparent alumina film having a coating hardness Hv of 700 or more and an adhesive force of 10 N or more and having excellent adhesiveness can be formed. it can. Even if the oxygen pressure fluctuates within the above pressure range during the formation of the second layer, the characteristics of the obtained coating remain unchanged.

【0008】該金属としてはS15Cなどの肌焼鋼、S
45Cなどの構造用鋼、SUP10などのばね鋼、SU
J2などの軸受鋼、SASM1などの窒化鋼、SKD6
などの熱間加工用鋼、SKD11などの冷間加工用鋼、
SKH51などの高速度工具鋼、SUS301などの耐
熱鋼、SUS410などの耐食耐酸鋼などの種々の鋼を
挙げることができる。
As the metal, case hardening steel such as S15C, S
Structural steel such as 45C, spring steel such as SUP10, SU
Bearing steel such as J2, nitrided steel such as SASM1, SKD6
Steel for hot working such as, steel for cold working such as SKD11,
Various steels such as high speed tool steel such as SKH51, heat resistant steel such as SUS301, and corrosion resistant acid resistant steel such as SUS410 can be mentioned.

【0009】また、蒸着材料としてのアルミナには焼結
して作製した焼結アルミナ粒と溶解により作製した溶解
アルミナ粒があるが、焼結アルミナを用いると、製膜中
アルミナ粒内部からガスが発生しやすく、突沸が発生し
基板表面にアルミナ粒子が付着し、基板表面を荒すとい
う問題が生じる。溶解アルミナを用いれば、突沸はかな
り抑えることができ、滑らかな蒸着面を有するアルミナ
蒸着基板が得られる。しかし、溶解アルミナを用いても
製膜速度が速すぎると、突沸が問題となるため製膜速度
は10μm/hr以下とする必要がある。
Alumina as a vapor deposition material includes sintered alumina particles produced by sintering and dissolved alumina particles produced by melting. When sintered alumina is used, gas is generated from inside the alumina particles during film formation. It is apt to occur, and bumping occurs, alumina particles adhere to the substrate surface, and the substrate surface is roughened. If molten alumina is used, bumping can be suppressed considerably, and an alumina vapor deposition substrate having a smooth vapor deposition surface can be obtained. However, even if dissolved alumina is used, if the film formation rate is too fast, bumping will be a problem, so the film formation rate must be 10 μm / hr or less.

【0010】本発明に用いるイオンプレーティング法と
しては、蒸着材料の蒸発方法として抵抗加熱、電子銃加
熱等の蒸発材料の溶融を伴う方法を用いたものであれば
良く、また、蒸着材料のイオン化の方法としてアーク放
電、グロー放電、高周波放電等のいずれの方法を備えた
ものでもよい。
The ion plating method used in the present invention may be any method that uses a method involving melting of the evaporation material such as resistance heating or electron gun heating as the evaporation material evaporation method, and ionization of the evaporation material. Any of the methods such as arc discharge, glow discharge, and high frequency discharge may be used.

【0011】基板に印加するバイアス電圧は0〜−50
0V以下にしたほうがよい。アルミナ被膜の電気絶縁性
がさほど要求されないときはバイアス電圧印加により密
着力を向上させることができるが、高い電気絶縁性が要
求されるときは大きなバイアス電圧を印加することによ
りアルミナ膜が絶縁破壊を起こしてしまう。
The bias voltage applied to the substrate is 0 to -50.
It is better to set it to 0V or less. When the electrical insulation of the alumina film is not so required, the adhesion force can be improved by applying a bias voltage, but when high electrical insulation is required, a large bias voltage is applied to cause the alumina film to break down. I will wake you up.

【0012】製膜中温度は基板の種類、用途に応じて適
宜選択することができ、各種ヒータにより制御すること
ができる。
The temperature during film formation can be appropriately selected according to the type of substrate and the application, and can be controlled by various heaters.

【0013】[0013]

【実施例】【Example】

(実施例1)本発明の実施例として、高周波イオンプレ
ーティング法を用い、蒸着原料として溶解法により作製
したアルミナを用いて、SKH51材上に蒸着したアル
ミナ膜の酸素圧による硬度変化及び密着力変化をそれぞ
れ図1及び図2に示す。酸素の圧力が1×10-4Tor
rより低いとアルミナ被膜の硬度はビッカース硬度でH
v700以下になってしまう。1×10-4Torr以上
でHv700〜Hv1100の被膜が得られる。アルミ
ナ被膜の密着力は、硬度の酸素圧依存性とは反対に、酸
素圧が1×10-4Torr未満で10N以上の密着力が
得られ、1×10-4Torr以上では10N未満になっ
てしまう。
(Example 1) As an example of the present invention, using a high frequency ion plating method and using alumina prepared by a melting method as a vapor deposition material, a hardness change and an adhesion force of an alumina film vapor-deposited on a SKH51 material due to oxygen pressure The changes are shown in FIGS. 1 and 2, respectively. Oxygen pressure is 1 × 10 -4 Tor
If it is lower than r, the hardness of the alumina coating is Vickers hardness H.
v700 or less. A coating of Hv700 to Hv1100 can be obtained at 1 × 10 −4 Torr or more. Adhesion of the alumina coating, as opposed to the oxygen pressure dependency of hardness, the oxygen pressure is 10N or more adhesion was obtained with less than 1 × 10 -4 Torr, becomes less than 10N in 1 × 10 -4 Torr or more Will end up.

【0014】被覆すべき基板として、SKH51材を用
いた。この基板を有機溶剤で洗浄後、真空反応槽内にセ
ットしこの真空反応槽内の圧力を1×10-5Torr以
上まで真空に排気した。目標真空度に到達後、300℃
で1時間加熱し、その後Arイオンボンバード処理を1
0分間行った。蒸着材料には溶解法により作製した粒径
1mmから3mmのアルミナ粒を用いた。この蒸着源に
9kV−300mAの加速電子を当てることによって加
熱溶解し、アルミナを蒸発させるが、第一層は反応ガス
としての酸素を導入せずに、30分蒸着する。その後、
酸素20cc導入し圧力を3×10-4Torrとし、さ
らに30分第二層の蒸着を行った。第一層及び第二層を
通して、高周波による蒸発材料のイオン化は行わず、基
板にバイアス電圧を印加していない。また製膜中の温度
は300℃、製膜速度は3μm/hrであった。
SKH51 material was used as the substrate to be coated. After washing this substrate with an organic solvent, it was set in a vacuum reaction tank and the pressure in the vacuum reaction tank was evacuated to a vacuum of 1 × 10 −5 Torr or more. After reaching the target vacuum degree, 300 ℃
Heat for 1 hour and then Ar ion bombard treatment for 1 hour
It went for 0 minutes. As the vapor deposition material, alumina particles having a particle diameter of 1 mm to 3 mm prepared by a melting method were used. By applying accelerated electrons of 9 kV-300 mA to this vapor deposition source to heat and melt it to evaporate alumina, the first layer is vapor-deposited for 30 minutes without introducing oxygen as a reaction gas. afterwards,
20 cc of oxygen was introduced, the pressure was set to 3 × 10 −4 Torr, and the second layer was vapor-deposited for 30 minutes. The evaporation material is not ionized by high frequency through the first layer and the second layer, and the bias voltage is not applied to the substrate. The temperature during film formation was 300 ° C., and the film formation rate was 3 μm / hr.

【0015】この様な条件の製膜により、3μmのアル
ミナ被膜が得られた。この被膜の硬度はHv950で、
密着力は16Nであり、高硬度で高密着力の透明アルミ
ナ膜が得られた。また、被膜の最大粗さRmax は0.3
2μmであった。
By the film formation under the above conditions, a 3 μm alumina coating film was obtained. The hardness of this coating is Hv950,
The adhesion was 16 N, and a transparent alumina film having high hardness and high adhesion was obtained. The maximum roughness R max of the coating is 0.3.
It was 2 μm.

【0016】(実施例2)第一層及び第二層製膜中に蒸
発材料をイオン化するためにイオン化電極に200Wの
高周波を印加した以外は実施例1と同様の条件でアルミ
ナ膜を製膜した。得られた被膜の膜厚は2.8μmで、
被膜の硬度はHv1050、密着力は17Nであった。
(Example 2) An alumina film was formed under the same conditions as in Example 1 except that a high frequency of 200 W was applied to the ionization electrode in order to ionize the evaporation material during the film formation of the first and second layers. did. The thickness of the obtained film was 2.8 μm,
The hardness of the coating was Hv1050 and the adhesion was 17N.

【0017】(実施例3)第一層製膜中に基板にバイア
ス電圧を−100V印加した以外は実施例1と同様の条
件でアルミナ膜を製膜した。得られた被膜の膜厚は3.
1μmで、被膜硬度はHv970で密着力は20Nであ
った。
(Example 3) An alumina film was formed under the same conditions as in Example 1 except that a bias voltage of -100 V was applied to the substrate during the formation of the first layer. The film thickness of the obtained film is 3.
The coating hardness was Hv970 and the adhesion was 20 N.

【0018】(比較例1)蒸発材料として焼結により作
製したアルミナ粒を用いた以外は実施例1と同様にアル
ミナ膜を製膜した。得られた被膜の膜厚は3.4μm
で、硬度はHv930、密着力は16Nで、溶解アルミ
ナを用いた場合とほぼ同程度であるが、表面粗度はR
max 0.9μmで表面には突沸により付着したと思われ
る粒子が多数観察された。
Comparative Example 1 An alumina film was formed in the same manner as in Example 1 except that alumina particles produced by sintering were used as the evaporation material. The thickness of the obtained film is 3.4 μm
The hardness is Hv 930, the adhesion is 16 N, which is almost the same as the case of using fused alumina, but the surface roughness is R.
At a maximum of 0.9 μm, a large number of particles that were thought to be attached by bumping were observed on the surface.

【0019】(比較例2)第二層製膜中の酸素の圧力を
7×10-5Torrとした以外は実施例1と同様の条件
でアルミナ膜を製膜した。得られた被膜の膜厚は3.5
μmで、硬度はHv630、密着力は15Nであった。
(Comparative Example 2) An alumina film was formed under the same conditions as in Example 1 except that the pressure of oxygen in the film formation of the second layer was 7 × 10 -5 Torr. The thickness of the obtained film is 3.5.
In μm, the hardness was Hv630 and the adhesion was 15N.

【0020】(比較例3)第一層、第二層の製膜を通し
て、蒸発源に9kV−300mAの加速電圧を当てて、
被膜の製膜速度を13μm/hrとした以外は実施例1
と同様の条件でアルミナ膜を製膜した。被膜硬度はHv
880、密着力は15Nであったが、表面粗度はRmax
1.2μmで表面には突沸により付着したと思われる粒
子が多数観察された。
Comparative Example 3 An accelerating voltage of 9 kV-300 mA was applied to the evaporation source through the film formation of the first layer and the second layer,
Example 1 except that the film forming rate of the film was 13 μm / hr.
An alumina film was formed under the same conditions as above. Coating hardness is Hv
880, adhesion was 15 N, but surface roughness is R max
At 1.2 μm, a large number of particles that were thought to be attached by bumping were observed on the surface.

【0021】[0021]

【発明の効果】上述したように本発明による製膜方法を
用いることにより、硬質で密着力に優れ、平滑な表面を
持つ透明なアルミナ膜を金属材料上に製膜することがで
き、装飾品等の耐摩耗性を大幅に改善することができ
る。
As described above, by using the film forming method according to the present invention, it is possible to form a transparent alumina film having a hard surface, excellent adhesion, and a smooth surface on a metal material. It is possible to greatly improve the wear resistance of the above.

【図面の簡単な説明】[Brief description of drawings]

【図1】図1は酸素圧と被膜硬度の関係を示す図であ
る。
FIG. 1 is a diagram showing a relationship between oxygen pressure and coating hardness.

【図2】図2は酸素圧と密着力の関係を示す図である。FIG. 2 is a diagram showing the relationship between oxygen pressure and adhesion.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 イオンプレーティング法により金属表面
にアルミナ被膜を製膜する際に、(1)蒸着材料として
溶解により作製したアルミナ粒を用い、(2)第一層と
して1×10-4Torrより低い圧力でアルミナを蒸着
し、(3)その後、第二層として真空槽内の圧力が1×
10-4Torr〜1×10-3Torrになるように反応
ガスとして酸素を導入した状態でアルミナを蒸着し、
(4)第一層、第二層を通して、アルミナ膜の製膜速度
を10μm/hr以下に保持することを特徴とするアル
ミナ膜の製膜方法。
1. When forming an alumina coating on a metal surface by an ion plating method, (1) alumina particles produced by dissolution are used as a vapor deposition material, and (2) 1 × 10 −4 Torr as a first layer. Alumina is deposited at a lower pressure, and (3) after that, the pressure in the vacuum chamber as the second layer is 1 ×.
Alumina is vapor-deposited in a state where oxygen is introduced as a reaction gas so as to be 10 −4 Torr to 1 × 10 −3 Torr,
(4) A method for forming an alumina film, characterized in that the film forming rate of the alumina film is maintained at 10 μm / hr or less through the first layer and the second layer.
JP28707392A 1992-10-02 1992-10-02 Method for forming alumina film Pending JPH06116711A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28707392A JPH06116711A (en) 1992-10-02 1992-10-02 Method for forming alumina film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28707392A JPH06116711A (en) 1992-10-02 1992-10-02 Method for forming alumina film

Publications (1)

Publication Number Publication Date
JPH06116711A true JPH06116711A (en) 1994-04-26

Family

ID=17712709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28707392A Pending JPH06116711A (en) 1992-10-02 1992-10-02 Method for forming alumina film

Country Status (1)

Country Link
JP (1) JPH06116711A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102115868A (en) * 2009-12-30 2011-07-06 上海欧菲尔光电技术有限公司 Method for preparing aluminum oxide protective film of infrared window
JP2012110894A (en) * 2000-01-27 2012-06-14 Battelle Memorial Inst Catalyst, method of manufacturing the same, and reaction using the catalyst

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012110894A (en) * 2000-01-27 2012-06-14 Battelle Memorial Inst Catalyst, method of manufacturing the same, and reaction using the catalyst
CN102115868A (en) * 2009-12-30 2011-07-06 上海欧菲尔光电技术有限公司 Method for preparing aluminum oxide protective film of infrared window

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