JPH06108234A - Vapor deposition device - Google Patents

Abstract

PURPOSE:To prevent deterioration of a characteristic of a semiconductor device by providing a conductive shielding plate of a prescribed shape between a source and a substrate, and preventing a secondary electron and a reflected electron from reaching the substrate, in the vapor deposition device using an electron gun. CONSTITUTION:This vapor deposition device using an electron gun 6 is formed by providing a conductive shielding plate between a source 4 and a substrate 3. The shielding plate is formed by a porous plate-like shielding plate 7, or a meshy shielding plate. In such a way, it is prevented that a secondary electron and a reflected electron generated in the course of vapor deposition reach the substrate 3, and deterioration of a characteristic of a semiconductor device is suppressed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor deposition apparatus using an E gun, and more particularly to a structure for reducing damage.

[0002]

2. Description of the Related Art Conventionally, in this type of vapor deposition apparatus, as shown in FIG. 3, an electron beam is emitted from an E gun 6 and is applied to a source 4 in a rubo 5 by a magnetic field to melt the source 4 for vapor deposition. It was

For example, when the gate electrode of a MESFET made of GaAs is formed of aluminum, a mask having an opening is formed on a GaAs wafer 3 having an active layer, the mask is set on the wafer holder 2, and the source aluminum 4 is set on the crucible 5. After depositing and depositing, the aluminum film on the mask is lifted off together with the mask to form a gate electrode.

[0004]

By the way, in the conventional vapor deposition apparatus using the above E gun, secondary electrons and reflected electrons are generated when the electron beam hits the source or when the source is melted, and these are reflected on the wafer. There was a drawback that it reached and damaged it, causing characteristic deterioration.

For example, in the case of vapor deposition for forming the gate electrode of the MESFET described above, the current value between the drain and the source becomes normal.

[0006]

In the vapor deposition apparatus of the present invention, a conductive shield plate is provided between the source and the wafer.

The shield plate may have a hole that does not prevent the deposition material from reaching the wafer. Also, a mesh-like one may be used.

[0008]

According to the above structure, since the secondary electrons and reflected electrons generated from the source portion during vapor deposition are blocked by the shield plate, the number of secondary electrons and reflected electrons reaching the wafer is reduced, so that damage to the wafer is prevented. It is less, and the characteristic deterioration can be prevented.

[0009]

1 is a sectional view of an embodiment of the present invention.
In the figure, 1 is a chamber, 2 is a wafer holder, and 3
Is a wafer, 4 is a source, 5 is a rubo, 6 is an E gun, 7
Is a shield plate (plate-like).

According to this embodiment, by providing a plate-shaped conductive shield plate having a hole of an area required for the source to be deposited on the wafer, secondary electrons and reflected electrons generated during the deposition are provided. Of these, those that do not pass through this hole have the advantage that they can be prevented from reaching the wafer.

[0011]

[Embodiment 2] FIG. 2 is a sectional view of a second embodiment of the present invention. In this embodiment, the plate-shaped shielding plate of the first embodiment is replaced with a mesh-shaped one.

This embodiment has an advantage that secondary electrons and reflected electrons generated during vapor deposition that pass through other than the holes of the mesh can be prevented from reaching the wafer.

[0013]

As described above, according to the present invention, by providing the conductive shield plate between the source and the wafer,
This has the effect of preventing secondary electrons and reflected electrons generated during vapor deposition from reaching the wafer, and suppressing the deterioration of the characteristics of semiconductor devices.

[Brief description of drawings]

FIG. 1 is a sectional view of a first embodiment of the present invention.

FIG. 2 is a sectional view of a second embodiment of the present invention.

FIG. 3 is a cross-sectional view of a conventional vapor deposition device.

[Explanation of symbols]

 1 Chamber 2 Wafer Holder 3 Wafer (Substrate) 4 Source 5 Rubo 6 E Gun 7 Shielding Plate (Plate) 8 Shielding Plate (Mesh)

Claims (3)

[Claims] 1. A vapor deposition apparatus using an E gun, wherein a conductive shield plate is provided between a source and a substrate. 2. The vapor deposition apparatus according to claim 1, wherein the shielding plate is a plate having a hole that does not prevent the deposition material from reaching the deposition target. 3. The vapor deposition device according to claim 1, wherein the shielding plate is a mesh.