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JPH056850A - Exposure equipment - Google Patents

Exposure equipment

Info

Publication number
JPH056850A
JPH056850A JP3036528A JP3652891A JPH056850A JP H056850 A JPH056850 A JP H056850A JP 3036528 A JP3036528 A JP 3036528A JP 3652891 A JP3652891 A JP 3652891A JP H056850 A JPH056850 A JP H056850A
Authority
JP
Japan
Prior art keywords
stage
exposure apparatus
air
ventilation
reflecting mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3036528A
Other languages
Japanese (ja)
Other versions
JP3163636B2 (en
Inventor
Masahiro Nei
正洋 根井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP03652891A priority Critical patent/JP3163636B2/en
Publication of JPH056850A publication Critical patent/JPH056850A/en
Application granted granted Critical
Publication of JP3163636B2 publication Critical patent/JP3163636B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

(57)【要約】 【目的】 露光装置においてステージの温度上昇に伴う
位置計測誤差、並びにステージの移動に伴う空気のゆら
ぎに起因する位置計測誤差を低減する。 【構成】 ステージ上に載置された被露光体をレーザ干
渉計による位置計測に基いて相対移動させながら露光す
る露光装置であって、レーザ干渉計の反射鏡その他に通
気孔が設けられているもの。前記通気孔から空気を吸引
または送風する通気手段を備え、さらに、吸引量等もし
くは送風する空気の温度等に対する制御手段を備えてい
るもの。
(57) [Summary] [Object] To reduce the position measurement error due to the temperature rise of the stage in the exposure apparatus and the position measurement error due to the fluctuation of air accompanying the movement of the stage. An exposure apparatus that exposes an object to be exposed placed on a stage while relatively moving it based on position measurement by a laser interferometer, in which a vent hole is provided in a reflecting mirror and the like of the laser interferometer. thing. A ventilation means for sucking or blowing air from the ventilation hole, and a control means for controlling the suction amount or the temperature of the blown air.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はIC,LSI等の回路パ
ターンや液晶表示素子用のパターンを投影露光する装置
に関するものであり、詳しくはレーザ干渉計を備えた可
動体の位置、距離の測定装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for projecting and exposing a circuit pattern such as an IC or LSI or a pattern for a liquid crystal display element, and more specifically to measuring the position and distance of a movable body equipped with a laser interferometer. Regarding the device.

【0002】[0002]

【従来の技術】従来、この種の露光装置は図5に示すよ
うな構造であった。この装置では、光源となる水銀放電
灯62からの照明光が、レチクル58上の照度分布を均
一にするフライアイレンズ61、露光波長の照明光を反
射するダイクロイックミラー60並びにコンデンサーレ
ンズ59を介してレチクル58を照射する。そして、被
投影対象物となるレチクル58上の所定のパターン像
が、投影レンズ57を介して被露光物となるウエハ54
上に投影露光される。
2. Description of the Related Art Conventionally, this type of exposure apparatus has a structure as shown in FIG. In this device, illumination light from a mercury discharge lamp 62, which serves as a light source, passes through a fly-eye lens 61 that makes the illuminance distribution on a reticle 58 uniform, a dichroic mirror 60 that reflects illumination light having an exposure wavelength, and a condenser lens 59. The reticle 58 is irradiated. Then, a predetermined pattern image on the reticle 58, which is an object to be projected, is transferred via the projection lens 57 to the wafer 54 to be an object to be exposed.
It is projected onto and exposed.

【0003】ところで、この装置ではウエハ54がチャ
ック55に吸着されてウエハステージ56上に載置され
ており、ウエハステージ56ごとウエハ54を移動させ
てウエハ54上の被露光位置を変えながら投影露光作業
を繰返す、いわゆるステップ・アンド・リピート方式を
採用している。
By the way, in this apparatus, the wafer 54 is adsorbed by the chuck 55 and placed on the wafer stage 56, and the wafer 54 is moved together with the wafer stage 56 to change the exposure position on the wafer 54 to perform projection exposure. It employs a so-called step-and-repeat method in which work is repeated.

【0004】このため、ウエハ54の相対位置を計測す
るために、ウエハステージ56に固定された反射鏡53
に、周波数が安定化されたレーザビーム52を投射する
レーザ干渉計51によりステージ位置の計測が行われて
いる。
Therefore, in order to measure the relative position of the wafer 54, the reflecting mirror 53 fixed to the wafer stage 56.
The stage position is measured by the laser interferometer 51 that projects the laser beam 52 whose frequency is stabilized.

【0005】ところで、ウエハステージ56はウエハ5
4をその全面に亙って移動させる必要があるため数百mm
の移動ストロークを有しており、そのため干渉計ビーム
52の光路長は数mm〜数百mmの範囲で変化する。
By the way, the wafer stage 56 is used for the wafer 5.
Since it is necessary to move 4 over the entire surface, several hundred mm
The moving path length of the interferometer beam 52 varies in the range of several mm to several hundred mm.

【0006】[0006]

【発明が解決しようとする課題】上記の如き従来の技術
に於いては、ウエハステージ56自体がステッピング動
作を繰り返すうちに、移動摩擦等の影響から次第に暖ま
って熱膨張が生じ、このためウエハ54と反射鏡53と
の間の距離が変わってしまい、正確なウエハ(ステー
ジ)位置が計測出来ないという問題点があった。
In the prior art as described above, while the wafer stage 56 itself repeats the stepping operation, it gradually warms up due to the influence of moving friction and the like, and thermal expansion occurs. There is a problem in that the distance between the mirror and the reflecting mirror 53 is changed, and an accurate wafer (stage) position cannot be measured.

【0007】また、その熱がウエハステージ56上の反
射鏡53に伝わり、反射鏡53自身が歪むことで、計測
誤差を生ずるという問題もあった。
There is also a problem that the heat is transmitted to the reflecting mirror 53 on the wafer stage 56 and the reflecting mirror 53 itself is distorted, resulting in a measurement error.

【0008】また、露光照明光がウエハ54を暖め、そ
の熱がウエハホルダ55からウエハステージ56に伝わ
り、同様の現象を引き起していた。
Further, the exposure illumination light warms the wafer 54, and the heat is transmitted from the wafer holder 55 to the wafer stage 56, causing the same phenomenon.

【0009】一方、レーザ干渉計51での計測において
は、ビーム52の送光路中の空気ゆらぎの影響が従来か
ら存在していたが、ウエハステージ56の移動によりビ
ーム52の光路上の空気が乱され、このゆらぎ、もしく
はそれによる計測誤差、が大きくなるといった問題があ
った。
On the other hand, in the measurement by the laser interferometer 51, the influence of air fluctuation in the light transmission path of the beam 52 has been present, but the movement of the wafer stage 56 causes the air on the light path of the beam 52 to be disturbed. However, there is a problem that this fluctuation or a measurement error due to it becomes large.

【0010】本発明はこの様な従来の問題点に鑑みてな
されたものであり、ウエハステージの発熱による影響を
低減することと、空気ゆらぎによる計測誤差の発生を低
減することを目的とする。
The present invention has been made in view of such conventional problems, and an object thereof is to reduce the influence of heat generation of the wafer stage and to reduce the occurrence of measurement errors due to air fluctuations.

【0011】[0011]

【課題を解決するための手段】上記目的達成のために本
願請求項1記載の発明では、投影光学系を介した被投影
対象物の像をステージ上に載置された被露光体に投影す
ると共に、レーザ干渉計による位置計測に基いて前記被
露光体を光軸と垂直な方向に相対移動させながら露光す
る露光装置であって、前記ステージが前記被露光体の相
対位置を計測するためのレーザ干渉計の反射鏡を有し、
この反射鏡もしくはその支持部に通気孔が設けられてい
る。
In order to achieve the above object, in the invention according to claim 1 of the present application, an image of an object to be projected through a projection optical system is projected onto an object to be exposed mounted on a stage. Together with an exposure apparatus that exposes the exposed body while relatively moving the exposed body in a direction perpendicular to the optical axis based on position measurement by a laser interferometer, the stage for measuring the relative position of the exposed body With a laser interferometer reflector,
Vents are provided in this reflecting mirror or its support.

【0012】また、本願請求項2記載の発明では、前記
通気孔の開口方向が前記レーザ干渉計の計測光軸方向に
一致させて配置されている。
Further, in the invention according to claim 2 of the present application, the opening direction of the ventilation hole is arranged so as to coincide with the measurement optical axis direction of the laser interferometer.

【0013】さらに、本願請求項3記載の発明では、前
記通気孔が前記ステージ内にあらかじめ設置された第2
の通気孔と接続されている。
Further, in the invention according to claim 3 of the present application, the vent hole is provided in the second stage in advance.
It is connected to the ventilation holes.

【0014】一方、本願請求項4記載の発明では、前記
通気孔から空気を吸引または送風する通気手段を備えて
いる。
On the other hand, in the invention according to claim 4 of the present application, a ventilation means for sucking or blowing air from the ventilation hole is provided.

【0015】加えて、本願請求項5記載の発明では、前
記通気手段が、吸引または送風動作においてステージ位
置および移動距離により吸引量もしくは送風量を可変さ
せる制御を行う制御手段を備えている。
In addition, in the invention according to claim 5 of the present application, the ventilation means is provided with a control means for performing control for varying the suction amount or the blowing amount depending on the stage position and the moving distance in the suction or blowing action.

【0016】また、本願請求項6記載の発明では、前記
通気手段が、送風する空気の温度を変化させる温度可変
手段を備えている。
Further, in the invention according to claim 6 of the present application, the ventilation means includes a temperature varying means for changing the temperature of the air to be blown.

【0017】[0017]

【作 用】本願に係る発明は上記のように構成されてい
るため以下の作用を奏する。すなわち、本願請求項1記
載の発明は、反射鏡もしくはその支持部に通気孔を設け
ることで充分な放熱面積を確保し、これらの温度上昇を
低減させる。
[Operation] Since the invention according to the present application is configured as described above, it has the following effects. That is, the invention according to claim 1 of the present application secures a sufficient heat radiation area by providing a ventilation hole in the reflecting mirror or its supporting portion, and reduces the temperature rise thereof.

【0018】さらに、本願請求項2記載の発明では、前
記通気孔の開口方向をレーザ干渉計の計測光軸方向に一
致させているため、反射鏡(ステージ)の移動に伴い、
計測光軸方向の空気を前記通気孔を通じて逃すことで、
計測光の光路上の空気のゆらぎの発生を低減させる。
Further, in the invention according to claim 2 of the present application, since the opening direction of the ventilation hole is aligned with the measurement optical axis direction of the laser interferometer, the movement of the reflecting mirror (stage)
By letting air in the measurement optical axis direction escape through the ventilation hole,
The occurrence of air fluctuations on the optical path of measurement light is reduced.

【0019】また、本願請求項3記載の発明では、ステ
ージ内に第2の通気孔を設けてこれと前記通気孔とを接
続することで、ステージ自体の放熱面積を確保してい
る。
According to the third aspect of the present invention, the second vent hole is provided in the stage and the vent hole is connected to the second vent hole to secure the heat dissipation area of the stage itself.

【0020】一方、本願請求項4記載の発明では、通気
手段を設けることで上記の通気孔の放熱作用を向上させ
ている。さらに、反射鏡の移動に伴う空気の乱れに対
し、反射鏡の通気孔自身が吸引もしくは送風動作を行な
うことで、計測光の光路上の空気のゆらぎを一層低減す
る。
On the other hand, in the invention according to claim 4 of the present application, by providing the ventilation means, the heat radiation effect of the ventilation hole is improved. Further, in response to the turbulence of the air due to the movement of the reflecting mirror, the ventilation hole itself of the reflecting mirror performs suction or blowing operation, thereby further reducing the fluctuation of air on the optical path of the measurement light.

【0021】ここで、本願請求項5記載の発明では、上
記の吸引または送風動作においてステージ位置および移
動距離により吸引量もしくは送風量を可変させる制御を
行う制御手段が設けられているため、反射鏡並びにステ
ージの移動状態の変化に応じた空気の乱れの影響の相違
に対して、適正な通気量で通気を行うので、常に適正な
空気のゆらぎの防止を図る。
Here, in the invention according to claim 5 of the present application, since the control means for controlling the amount of suction or the amount of blown air in accordance with the stage position and the moving distance in the above-mentioned suction or blowing operation is provided, the reflecting mirror is provided. In addition, since the ventilation is performed with an appropriate amount of air with respect to the difference in the influence of the turbulence of the air according to the change in the moving state of the stage, it is always possible to prevent the appropriate fluctuation of the air.

【0022】また、本願請求項6記載の発明では、送風
する空気の温度を変化させる温度可変手段を備えている
ため、反射鏡もしくはステージの温度変化に対して、そ
れらを有効に補正する。即ち、温度上昇に対しては、冷
風を通気することで、適確に反射鏡等の温度上昇を抑え
ることができる。
Further, in the invention according to the sixth aspect of the present invention, since the temperature varying means for changing the temperature of the air to be blown is provided, they are effectively corrected for the temperature change of the reflecting mirror or the stage. That is, with respect to the temperature rise, by ventilating the cool air, the temperature rise of the reflecting mirror and the like can be suppressed appropriately.

【0023】一方、反射鏡等の温度変化に伴い通気する
空気の温度が変化すると、計測光路上に外気と温度が異
なる空気が放出され、この結果空気の温度分布に伴うゆ
らぎが生ずる恐れがある。本発明では、温度可変手段に
より通気孔からの放出空気温度を一定に保つことができ
るため、計測光路上の空気の温度変化による空気のゆら
ぎの発生を防止する。
On the other hand, if the temperature of the ventilated air changes with the temperature change of the reflecting mirror or the like, air having a temperature different from that of the outside air is discharged onto the measurement optical path, and as a result, fluctuations due to the temperature distribution of the air may occur. . In the present invention, the temperature of the air discharged from the ventilation hole can be kept constant by the temperature varying means, so that the fluctuation of the air due to the temperature change of the air on the measurement optical path is prevented.

【0024】[0024]

【実施例】以下、実施例を通じ本発明を更に詳しく説明
する。図2は本発明の第1の実施例に係る露光装置であ
って、ランプハウス12を出た照明光は、フライアイレ
ンズ11,ダイクロイックミラー10,コンデンサレン
ズ9を通ってレチクル8を照明する。この照明光によ
り、レチクル8上に設けられた所定のパターンの像が縮
小投影レンズ7によってウエハ4上に結像される。
The present invention will be described in more detail with reference to the following examples. FIG. 2 shows an exposure apparatus according to the first embodiment of the present invention. Illumination light emitted from a lamp house 12 passes through a fly-eye lens 11, a dichroic mirror 10 and a condenser lens 9 to illuminate a reticle 8. By this illumination light, an image of a predetermined pattern provided on the reticle 8 is formed on the wafer 4 by the reduction projection lens 7.

【0025】また、ウエハ4はウエハホルダ5に載置さ
れており、ウエハホルダ5はウエハステージ6に固定さ
れている。この図1では省略してあるが、ウエハステー
ジ6は垂直(光軸)方向への移動が可能であり、水平面
(紙面に垂直な面)内でY方向、Z方向の2軸の自由度
を持っている。そして、このウエハステージ6によりス
テップアンドリピート動作を行なって、ウエハ4の全面
にレチクル8のパターンが縮小投影露光されることにな
る。
The wafer 4 is mounted on the wafer holder 5, and the wafer holder 5 is fixed to the wafer stage 6. Although not shown in FIG. 1, the wafer stage 6 can be moved in the vertical (optical axis) direction, and has two degrees of freedom in the Y direction and the Z direction in the horizontal plane (plane perpendicular to the paper surface). have. Then, a step-and-repeat operation is performed by the wafer stage 6, and the pattern of the reticle 8 is reduced and projected and exposed on the entire surface of the wafer 4.

【0026】ここで、ウエハステージ6の位置を計測す
るために反射鏡3がウエハステージ6上に固定されてお
り、レーザ干渉計1から出たレーザビーム2により非接
触で位置を求めることができる。
Here, the reflecting mirror 3 is fixed on the wafer stage 6 for measuring the position of the wafer stage 6, and the position can be obtained in a non-contact manner by the laser beam 2 emitted from the laser interferometer 1. .

【0027】そして、この反射鏡3には、レーザビーム
2の反射部にかからない位置に通気孔101が設けられ
ており、その開口方向はレーザビーム2の光軸方向と一
致している。
The reflecting mirror 3 is provided with a ventilation hole 101 at a position not in contact with the reflecting portion of the laser beam 2, and the opening direction thereof coincides with the optical axis direction of the laser beam 2.

【0028】次に、本実施例のステージ部分を図1を用
いてさらに詳しく説明する。この図から明らかなよう
に、本実施例では通気孔101の一例としてX軸反射鏡
3aに通気孔101a,101b,101cを、またY
軸反射鏡3bに通気孔101d,101e,101fを
それぞれ配置してある。
Next, the stage portion of this embodiment will be described in more detail with reference to FIG. As is clear from this figure, in the present embodiment, as an example of the ventilation hole 101, ventilation holes 101a, 101b and 101c are provided in the X-axis reflecting mirror 3a, and Y is also used.
Vent holes 101d, 101e and 101f are arranged in the axial reflecting mirror 3b.

【0029】これらの通気孔の個数,配置,並びに大き
さ,形状等は、干渉計レーザビーム2a(X軸側),2
b(Y軸側)の大きさと位置、反射鏡3a,3bの大き
さ等で決定される。本実施例では、X軸反射鏡3aの反
射部30の下部に前述した通気孔101を設けている。
The number, arrangement, size, shape, etc. of these vent holes are determined by the interferometer laser beams 2a (X-axis side), 2
It is determined by the size and position of b (Y-axis side), the sizes of the reflecting mirrors 3a and 3b, and the like. In this embodiment, the above-mentioned ventilation hole 101 is provided below the reflecting portion 30 of the X-axis reflecting mirror 3a.

【0030】また、ウエハステージ6は、最上部のXス
テージ6xがその下部のYステージ6y上に設けられた
V−F溝60a,60Bに沿って不図示のニードルベア
リングを介して摺動する。そして、駆動用送りネジ20
を介してモータ22によりX軸方向に移動する。さら
に、Yステージ6yも同様にその下部に設けられたV−
Fガイド61a,61b上を摺動する。そして、これら
によりウエハステージ6上に載置されたウエハ4を水平
方向に2次元的に相対移動させることで、ウエハ4上の
露光エリアSAを順次移動させ、ウエハ4の全面に露光
動作を行う。尚、他の駆動手段並びに垂直方向への移動
手段等については、周知の従来例と同様であり説明を省
略する。
Further, in the wafer stage 6, the uppermost X stage 6x slides along a VF groove 60a, 60B provided on the lower Y stage 6y via a needle bearing (not shown). Then, the driving lead screw 20
It is moved in the X-axis direction by the motor 22 via. Further, the Y stage 6y is also provided with a V-
It slides on the F guides 61a and 61b. Then, the wafer 4 mounted on the wafer stage 6 is relatively two-dimensionally moved horizontally in the horizontal direction to sequentially move the exposure area SA on the wafer 4 and perform the exposure operation on the entire surface of the wafer 4. . The other driving means, the moving means in the vertical direction, and the like are the same as those in the well-known conventional example, and a description thereof will be omitted.

【0031】ところで、本実施例において露光動作を開
始すると、ウエハステージ6の各V−Fガイド部60
a,60bや、駆動系送りネジ20と螺合しているナッ
ト等からの発熱により、ウエハステージ6が暖まって温
度が上昇する。その熱が、Xステージ6xから反射鏡3
に伝わり、反射鏡3の温度が上昇するとミラー面(反射
部)30の面精度を悪化させ、レーザ干渉計1での測定
誤差の原因となる。
By the way, when the exposure operation is started in this embodiment, each VF guide section 60 of the wafer stage 6 is started.
The wafer stage 6 is warmed and the temperature rises due to heat generated from a, 60b, a nut screwed with the drive system feed screw 20, and the like. The heat from the X stage 6x to the reflecting mirror 3
When the temperature of the reflecting mirror 3 rises, the surface accuracy of the mirror surface (reflecting portion) 30 deteriorates, causing a measurement error in the laser interferometer 1.

【0032】ここで、反射鏡3には通気孔101が存在
するので、従来例に比較して放熱面積が格段に広がるた
め、温度上昇率が従来例に比較して格段に少なくなり、
温度変化に伴う測定誤差が格段に減少する。
Here, since the reflecting mirror 3 has the vent holes 101, the heat radiation area is significantly expanded as compared with the conventional example, and the temperature rise rate is significantly smaller than that of the conventional example.
Measurement errors due to temperature changes are significantly reduced.

【0033】さらに、通気孔101がレーザ干渉計1の
レーザビーム2の光軸に沿って開口しているため、ウエ
ハステージ6自身のX,又はY方向移動によって通気孔
101を通過する空気による放熱効果もある。
Further, since the ventilation hole 101 is opened along the optical axis of the laser beam 2 of the laser interferometer 1, heat radiation by air passing through the ventilation hole 101 by movement of the wafer stage 6 itself in the X or Y direction. There is also an effect.

【0034】一方、この通気孔101により、ウエハス
テージ6のレーザビーム2の光軸方向の投影面積が少な
くなり、さらにはミラー面(反射部)30近傍に空気の
通気路としての(通気孔101の)開口部が存在するこ
とから、ウエハステージ6の移動に伴う光軸近傍の空気
の乱れが減少する。このため、これに伴う空気のゆらぎ
に起因した測定誤差が減少する。
On the other hand, the ventilation hole 101 reduces the projected area of the laser beam 2 on the wafer stage 6 in the direction of the optical axis, and further serves as an air ventilation path near the mirror surface (reflecting portion) 30 (the ventilation hole 101. The presence of the opening reduces the turbulence of air near the optical axis due to the movement of the wafer stage 6. For this reason, the measurement error due to the fluctuation of the air accompanying this is reduced.

【0035】次に、図3を用い第2の実施例について説
明する。本実施例においては、ウエハステージ306内
に通気孔103が設けらけており、ウエハステージ自体
の温度上昇をも低減させている。この通気孔103は、
通気孔101から接続管102を介して接続されてお
り、さらに、これらの通気孔101,103は、接続管
104を介して吸気・送風ユニット201に接続されて
いる。
Next, a second embodiment will be described with reference to FIG. In this embodiment, the vent holes 103 are provided in the wafer stage 306 to reduce the temperature rise of the wafer stage itself. This ventilation hole 103 is
The ventilation holes 101 are connected via a connecting pipe 102, and these ventilation holes 101 and 103 are connected to an intake / blowing unit 201 via a connecting pipe 104.

【0036】この実施例においては、ウエハステージ3
06のステッピング動作によって発熱し、ステージ30
6並びに反射鏡3の変形が予想される場合、吸気・送風
ユニット201を動作させることで、強制的に通気孔1
01,103内の空気流動を行ない、通気孔101,1
03での熱放射効果を増加させ、反射鏡の熱変形を押さ
えることが可能な構成となっている。またこの場合、通
気孔101を介してレーザビーム2の光路中に層流を与
えることになり、ゆっくりとした空気ゆらぎに対しても
効果がある。
In this embodiment, the wafer stage 3
Heat is generated by the stepping operation of 06, and the stage 30
6 and the reflection mirror 3 are expected to be deformed, the intake / blower unit 201 is operated to forcibly force the ventilation hole 1
01, 103 to move the air inside the vent holes 101, 1
It is possible to increase the heat radiation effect in 03 and suppress the thermal deformation of the reflecting mirror. Further, in this case, a laminar flow is given to the optical path of the laser beam 2 through the ventilation hole 101, which is effective for slow air fluctuation.

【0037】ここで、吸気・送風ユニット201はその
風速、流量を変えられるだけでなく、温度制御も可能と
することで、よりその温度変化抑制の効果を高めること
ができる。
Here, the intake / blower unit 201 can not only change its wind speed and flow rate, but can also control the temperature, so that the effect of suppressing the temperature change can be further enhanced.

【0038】一方、レーザ干渉計1における空気のゆら
ぎに伴う計測誤差は、ウエハステージ306のステッピ
ング動作によっても引き起こされる。
On the other hand, the measurement error due to the fluctuation of air in the laser interferometer 1 is also caused by the stepping operation of the wafer stage 306.

【0039】これを防止するためには、一例を示せば、
ウエハステージ306が干渉計1側に動く場合には、ウ
エハステージ306並びに反射鏡3で押し除けられる空
気(乱れる空気)を通気光101から吸引してやれば、
レーザビーム2の光路上の空気の乱れの影響が低減され
るものとなる。
In order to prevent this, one example is as follows:
When the wafer stage 306 moves toward the interferometer 1 side, if the air (disturbed air) pushed away by the wafer stage 306 and the reflecting mirror 3 is sucked from the ventilation light 101,
The influence of air turbulence on the optical path of the laser beam 2 is reduced.

【0040】そこで、ウエハステージ306のステッピ
ング動作前後の位置、ステッピングのスピード並びに移
動量等に応じて吸気送風ユニット201からの風量を変
化させることにより、空気ゆらぎの影響を適確に低減す
ることが可能である。
Therefore, the influence of air fluctuation can be appropriately reduced by changing the air volume from the intake air blowing unit 201 according to the position of the wafer stage 306 before and after the stepping operation, the stepping speed, the moving amount, and the like. It is possible.

【0041】本実施例では、通気制御部202を設け、
ウエハステージ306のモータ22を制御するステージ
ドライバー回路205からスピード情報Vdを、一方、
干渉計1から位置情報Pdを受取り、ウエハステージ3
06に蓄積される熱量、反射鏡3が受ける空気流等を統
計的に解析し、通気流量、方向並びに温度を変化させて
いる。
In this embodiment, the ventilation controller 202 is provided,
Speed information Vd from the stage driver circuit 205 that controls the motor 22 of the wafer stage 306,
The position information Pd is received from the interferometer 1, and the wafer stage 3
The amount of heat accumulated in 06, the air flow received by the reflecting mirror 3 and the like are statistically analyzed, and the ventilation flow rate, direction and temperature are changed.

【0042】なお、外気(装置外部、例えば光路上
等。)並びに通気孔内、もしくは反射鏡自体、ステージ
自体の温度は、個別の温度センサー(図示せず)により
計測されて、各々の温度情報として通気制御部202に
送られる。
The temperature of the outside air (outside of the device, for example, on the optical path), the inside of the vent hole, the reflecting mirror itself, and the stage itself is measured by an individual temperature sensor (not shown), and each temperature information is measured. Is sent to the ventilation controller 202.

【0043】尚、第3図では、接続管104がステージ
内の通気孔103を介してミラー3の通気孔101とつ
ながれているが、接続管104を通気孔101に直結し
てもよい。
Although the connection pipe 104 is connected to the ventilation hole 101 of the mirror 3 through the ventilation hole 103 in the stage in FIG. 3, the connection pipe 104 may be directly connected to the ventilation hole 101.

【0044】次に、図4を用い第3の実施例について説
明する。本実施例においては、ウエハホルダ405及び
ウエハステージ406に、通気孔103aが設けられて
おり、第2実施例と同様に、吸気・送風ユニット201
aから反射鏡3に設置された通気孔101までが接続さ
れている。
Next, a third embodiment will be described with reference to FIG. In this embodiment, the air holes 103a are provided in the wafer holder 405 and the wafer stage 406, and like the second embodiment, the air intake / blowing unit 201.
From a to the ventilation hole 101 installed in the reflecting mirror 3 is connected.

【0045】本実施例においては、ステッピング動作や
露光動作によるウエハステージ406への熱の蓄積を、
吸気・送風ユニット201aで積極的に押さえようとす
るものであり、露光照明光の影響等によるウエハホルダ
405の温度上昇をも考慮したものである。
In the present embodiment, the accumulation of heat on the wafer stage 406 by the stepping operation and the exposure operation is
The air intake / blower unit 201a actively tries to hold down the temperature, and also considers the temperature rise of the wafer holder 405 due to the influence of exposure illumination light.

【0046】この実施例では、第2実施例と同様に空気
ゆらぎの低減も期待できるが、熱によりウエハ4と反射
鏡3との間の間隔が変化して計測誤差となる可能性があ
るが、通気孔103aを用いて全体を一定の温度にする
ことで、これによる計測誤差が生じにくい構成となって
いる。
In this embodiment, it is possible to expect a reduction in air fluctuations as in the second embodiment, but there is a possibility that the distance between the wafer 4 and the reflecting mirror 3 may change due to heat, resulting in a measurement error. By using the vent holes 103a to keep the entire temperature constant, a measurement error due to this is less likely to occur.

【0047】このため制御部202はスピード情報V
d,位置情報Pdの他に、ステージに蓄積される熱的な
エネルギー量の変化特性を表す情報Edも入力する。
尚、露光装置として投影露光以外のプロキシミティ露光
であってもよい。
Therefore, the control unit 202 controls the speed information V
In addition to d and position information Pd, information Ed representing the change characteristic of the amount of thermal energy accumulated in the stage is also input.
The exposure apparatus may be proximity exposure other than projection exposure.

【0048】[0048]

【発明の効果】以上説明した様に本発明によれば、ステ
ージの高速移動や、露光動作による熱が原因で生ずる反
射鏡の変形やステージの膨張等の位置計測の誤差の大幅
な低減が可能となる。
As described above, according to the present invention, it is possible to significantly reduce the position measurement error such as the high speed movement of the stage and the deformation of the reflecting mirror and the expansion of the stage caused by the heat due to the exposure operation. Becomes

【0049】また、レーザ干渉計による計測システムに
おける空気ゆらぎという問題点も同時に解決することが
できる利点がある。
Further, there is an advantage that the problem of air fluctuation in the measurement system using the laser interferometer can be solved at the same time.

【0050】さらに、干渉計用の反射鏡を可動体に固定
して位置計測、距離計測する加工装置や測定装置におい
ても、本発明は全く同様に利用できる。従って本発明の
適用範囲は露光装置に限定されるものではない。
Further, the present invention can be used in the same manner in a processing device or a measuring device in which a reflecting mirror for an interferometer is fixed to a movable body to measure position and distance. Therefore, the applicable range of the present invention is not limited to the exposure apparatus.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1実施例にかかる露光装置のウエハ
ステージ周辺部を示す斜視図である。
FIG. 1 is a perspective view showing a peripheral portion of a wafer stage of an exposure apparatus according to a first embodiment of the present invention.

【図2】本発明の第1実施例にかかる露光装置の構成を
示す説明図である。
FIG. 2 is an explanatory diagram showing the configuration of the exposure apparatus according to the first embodiment of the present invention.

【図3】本発明の第2実施例にかかる露光装置のウエハ
ステージ周辺の構成を示す説明図である。
FIG. 3 is an explanatory diagram showing a configuration around a wafer stage of an exposure apparatus according to a second embodiment of the present invention.

【図4】本発明の第3実施例にかかる露光装置のウエハ
ステージ周辺の構成を示す説明図である。
FIG. 4 is an explanatory diagram showing a configuration around a wafer stage of an exposure apparatus according to a third embodiment of the present invention.

【図5】従来の露光装置の構成を示す説明図である。FIG. 5 is an explanatory diagram showing a configuration of a conventional exposure apparatus.

【符号の説明】[Explanation of symbols]

1…レーザ干渉計、2…レーザビーム、3,3a,3b
…反射鏡、4…ウエハ、5…ウエハホルダ、6,30
6,406…ウエハステージ、101,101a〜10
1f…通気孔、103,103a…通気孔(ウエハステ
ージ内)、201…吸気・送風ユニット
1 ... Laser interferometer, 2 ... Laser beam, 3, 3a, 3b
... Reflector, 4 ... Wafer, 5 ... Wafer holder, 6, 30
6,406 ... Wafer stage, 101, 101a to 10
1f ... Vent hole, 103, 103a ... Vent hole (inside wafer stage), 201 ... Intake / blower unit

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 投影光学系を介した被投影対象物の像を
ステージ上に載置された被露光体に投影すると共に、レ
ーザ干渉計による位置計測に基いて前記被露光体を光軸
と垂直な方向に相対移動させて露光する露光装置であっ
て、前記ステージが、前記被露光体の相対位置を計測す
るためのレーザ干渉計の反射鏡を有し、この反射鏡もし
くはその支持部に通気孔が設けられていることを特徴と
する露光装置。
1. An image of an object to be projected via a projection optical system is projected onto an object to be exposed mounted on a stage, and the object to be exposed is set as an optical axis based on position measurement by a laser interferometer. An exposure apparatus that performs relative movement in a vertical direction to perform exposure, wherein the stage has a reflecting mirror of a laser interferometer for measuring the relative position of the exposed object, and the reflecting mirror or a supporting portion thereof is provided. An exposure apparatus having a vent hole.
【請求項2】 前記通気孔の開口方向が、前記レーザ干
渉計の計測光軸方向に一致させて配置されていることを
特徴とする請求項1記載の露光装置。
2. The exposure apparatus according to claim 1, wherein the ventilation hole is arranged so that an opening direction thereof coincides with a measurement optical axis direction of the laser interferometer.
【請求項3】 前記通気孔が、前記ステージ内にあらか
じめ設置された第2の通気孔と接続されていることを特
徴とする請求項1又は2に記載の露光装置。
3. The exposure apparatus according to claim 1, wherein the ventilation hole is connected to a second ventilation hole installed in advance in the stage.
【請求項4】 前記通気孔から空気を吸引または送風す
る通気手段を備えたことを特徴とする請求項1,2又は
3に記載の露光装置。
4. The exposure apparatus according to claim 1, further comprising a ventilation means for sucking or blowing air from the ventilation hole.
【請求項5】 前記通気手段が、吸引または送風動作に
おいてステージ位置および移動距離により吸引量もしく
は送風量を可変させる制御を行う制御手段を備えている
ことを特徴とする請求項4記載の露光装置。
5. The exposure apparatus according to claim 4, wherein the ventilating means is provided with a control means for performing control for varying the suction amount or the blowing amount depending on the stage position and the moving distance in the suction or blowing action. .
【請求項6】 前記通気手段が、送風する空気の温度を
変化させる温度可変手段を備えていることを特徴とする
請求項4又は5記載の露光装置。
6. The exposure apparatus according to claim 4, wherein the ventilation unit includes a temperature changing unit that changes the temperature of the blown air.
JP03652891A 1991-02-07 1991-02-07 Processing device, stage device, and exposure device Expired - Lifetime JP3163636B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03652891A JP3163636B2 (en) 1991-02-07 1991-02-07 Processing device, stage device, and exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03652891A JP3163636B2 (en) 1991-02-07 1991-02-07 Processing device, stage device, and exposure device

Publications (2)

Publication Number Publication Date
JPH056850A true JPH056850A (en) 1993-01-14
JP3163636B2 JP3163636B2 (en) 2001-05-08

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ID=12472297

Family Applications (1)

Application Number Title Priority Date Filing Date
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