JPH0553871B2 - - Google Patents
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- Publication number
- JPH0553871B2 JPH0553871B2 JP24366285A JP24366285A JPH0553871B2 JP H0553871 B2 JPH0553871 B2 JP H0553871B2 JP 24366285 A JP24366285 A JP 24366285A JP 24366285 A JP24366285 A JP 24366285A JP H0553871 B2 JPH0553871 B2 JP H0553871B2
- Authority
- JP
- Japan
- Prior art keywords
- lid
- main body
- dry etching
- vacuum chamber
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
この発明は、CVD装置およびドライ・エツチ
ング装置における真空チヤンバの製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION FIELD OF INDUSTRIAL APPLICATION This invention relates to a method for manufacturing a vacuum chamber in a CVD device and a dry etching device.
従来技術とその問題点
CVD装置の真空チヤンバ内には、CVD法の実
施時に、反応ガスとしてSiCl4，SiH2Cl2，AlCl3，
PCl3，BCl3等の腐食性ガスが導入され、ドラ
イ・エツチング装置の真空チヤンバ内には、ドラ
イ・エツチングの実施時に、エツチング・ガスと
して塩素を含む腐食性ガスが導入されるので、従
来真空チヤンバとしてはステンレス鋼製のものが
用いられていた。ところが、ステンレス鋼製の真
空チヤンバは重量が大きく、しかも熱伝導性が悪
いという問題があつた。熱伝導性が十分でないと
次のような問題がある。すなわち、CVD装置お
よびドライ・エツチング装置の作動時には、まず
真空チヤンバ内面を200〜250℃に加熱することに
よりベーキング処理を施して真空チヤンバの内面
に吸着している水分を除去しているが、熱伝導性
が悪いと、上記ベーキングの時に真空チヤンバ全
体が均一に加熱されるのに時間がかかるのであ
る。Prior art and its problems During the CVD process, reaction gases such as SiCl 4 , SiH 2 Cl 2 , AlCl 3 ,
Corrosive gases such as PCl 3 and BCl 3 are introduced into the vacuum chamber of dry etching equipment, and corrosive gases containing chlorine are introduced as etching gases into the vacuum chamber of dry etching equipment. The chamber was made of stainless steel. However, vacuum chambers made of stainless steel have the problem of being heavy and having poor thermal conductivity. Insufficient thermal conductivity may cause the following problems. In other words, when CVD equipment and dry etching equipment operate, the inner surface of the vacuum chamber is first heated to 200 to 250°C to perform a baking process to remove moisture adsorbed on the inner surface of the vacuum chamber. If the conductivity is poor, it takes time to uniformly heat the entire vacuum chamber during the baking process.
そこで、ステンレス鋼に比較して重量が小さ
く、熱伝導性が優れ、しかも表面のガラス放出係
数の小さなアルミニウム材で真空チヤンバをつく
ることも考えられているが、アルミニウムは
CVD法やドライ・エツチングの実施時の反応ガ
スやエツチング・ガスにより腐食させられるとい
う問題があるので、いまだアルミニウム製の真空
チヤンバは実現していないのが実情である。 Therefore, it has been considered to make a vacuum chamber using aluminum, which is lighter in weight than stainless steel, has superior thermal conductivity, and has a small glass emission coefficient on the surface.
The reality is that aluminum vacuum chambers have not yet been realized due to the problem of corrosion caused by reaction gases and etching gases during CVD and dry etching.
この発明の目的は、上記の問題を解決した
CVD装置およびドライ・エツチング装置におけ
る真空チヤンバの製造方法を提供することにあ
る。 The purpose of this invention is to solve the above problems
An object of the present invention is to provide a method for manufacturing a vacuum chamber in a CVD device and a dry etching device.
問題点を解決するための手段
この発明によるCVD装置およびドライ・エツ
チング装置における真空チヤンバの製造方法は、
アルミニウム製真空チヤンバ用箱状本体および蓋
体をつくつた後、これらの内外両面のうち少なく
とも内面に、イオンプレーテイング法によつて、
CVD法に使用される反応ガスおよびドライ・エ
ツチングに使用されるエツチング・ガスに対する
耐食性を有する皮膜を形成することを特徴とする
ものである。Means for Solving the Problems A method for manufacturing a vacuum chamber in a CVD device and a dry etching device according to the present invention includes the following steps:
After making the aluminum box-shaped body and lid for the vacuum chamber, at least the inner surface of both the inner and outer surfaces thereof is coated by ion plating.
It is characterized by forming a film that has corrosion resistance against the reaction gas used in the CVD method and the etching gas used in dry etching.
上記において、CVD法に使用される反応ガス
およびドライ・エツチングに使用されるエツチン
グ・ガスに対する耐食性を有する皮膜としては、
TiN，TiC，AlN，AlC，Al2O3等が挙げられる。
TiNおよびAlNからなる皮膜は、N2ガスを反応
性ガスとして使用し、蒸発金属としてTiまたは
Alを使用してイオンプレーテイングを行なうこ
とにより形成される。TiCおよびAlCからなる皮
膜は、アセチレンを反応性ガスとして使用し、蒸
発金属としてTiまたはAlを使用してイオンプレ
ーテイングを行なうことにより形成される。Al2
O3からなる皮膜は、酸素含有ガスを反応性ガス
として使用し、蒸発金属としてAlを使用してイ
オンプレーテイングを行なうことにより形成され
る。このような皮膜の膜厚は１〜20μｍの範囲内
にあることが好ましい。その理由は、膜厚が1μ
ｍ未満であると、皮膜の耐食性が十分ではなく、
20μｍを越えるとイオンプレーテイングに要する
処理時間が長くなつてコスト高につながるととも
に、CVD法およびドライ・エツチングの実施時
のベーキングを繰返したさいに皮膜が割れやすく
なるおそれがあるからである。上記膜厚の制御
は、イオンプレーテイングのさいの処理時間、反
応性ガスの流量および流速、蒸着速度等を制御す
ることによつて行なう。 In the above, the film that has corrosion resistance against the reaction gas used in the CVD method and the etching gas used in dry etching is as follows:
Examples include TiN, TiC, AlN, AlC, Al 2 O 3 and the like.
Films consisting of TiN and AlN are produced using N2 gas as the reactive gas and Ti or AlN as the evaporated metal.
It is formed by ion plating using Al. Films made of TiC and AlC are formed by ion plating using acetylene as a reactive gas and Ti or Al as an evaporated metal. Al 2
A film made of O 3 is formed by ion plating using an oxygen-containing gas as a reactive gas and Al as an evaporated metal. The thickness of such a film is preferably within the range of 1 to 20 μm. The reason is that the film thickness is 1μ.
If it is less than m, the corrosion resistance of the film will not be sufficient,
This is because if the thickness exceeds 20 μm, the processing time required for ion plating becomes longer, leading to higher costs, and the film may be more likely to crack during repeated baking during CVD and dry etching. The film thickness is controlled by controlling the processing time, flow rate and flow rate of reactive gas, vapor deposition rate, etc. during ion plating.
箱状本体および蓋体のイオンプレーテイング
は、本体および蓋体を処理槽内に配置し、これを
陰極として行なうか、あるいは本体の開口を蓋体
で密閉するとともに内部を真空にし、本体および
蓋体を陰極とし、その内部に蒸発金属を配置する
とともに所定の反応性ガスを導入して行なう。 Ion plating of the box-shaped main body and lid can be performed by placing the main body and lid in a processing tank and using this as a cathode, or by sealing the opening of the main body with the lid and creating a vacuum inside. The body is used as a cathode, an evaporative metal is placed inside the cathode, and a predetermined reactive gas is introduced.
作 用
この発明の方法で製造された真空チヤンバの箱
状本体および蓋体がアルミニウム製であるから、
従来のステンレス鋼製の真空チヤンバに比べて軽
量になるとともに熱伝導性が向上し、しかもガス
放出係数が小さくなる。また、本体および蓋体を
アルミニウム材からつくるのであるから、ステン
レス鋼材からつくる場合に比較して加工が容易に
なる。さらに、材料費が安価になる。Effect Since the box-shaped body and lid of the vacuum chamber manufactured by the method of this invention are made of aluminum,
Compared to conventional stainless steel vacuum chambers, it is lighter, has improved thermal conductivity, and has a lower outgassing coefficient. Furthermore, since the main body and the lid are made from aluminum, processing is easier than when they are made from stainless steel. Furthermore, material costs are reduced.
また、本体および蓋体の内外両面のうち少なく
とも内面に、イオンプレーテイング法によつて、
CVD法に使用される反応ガスおよびドライ・エ
ツチングに使用されるエツチング・ガスに対する
耐食性を有する皮膜を形成するので、CVD法お
よびドライ・エツチングに使用するガスに対する
耐食性がステンレス鋼製のものと同等かそれ以上
になる。しかも、形成された皮膜には、その形成
時に水分が吸着することはない。 In addition, at least the inner surface of both the inner and outer surfaces of the main body and the lid is coated with an ion plating method.
It forms a film that has corrosion resistance against the reactive gases used in the CVD method and the etching gases used in dry etching, so its corrosion resistance against the gases used in the CVD method and dry etching is equivalent to that of stainless steel. It becomes more than that. Furthermore, moisture is not adsorbed to the formed film during its formation.
実施例
以下、この発明の実施例を比較例とともに示
す。Examples Examples of the present invention will be shown below along with comparative examples.
実施例 １
まず、アルミニウム材から真空チヤンバ用箱状
本体および蓋体をつくつた。ついで、これらの表
面にスパツタクリーニングを施した後、反応性ガ
スとしてN2ガスおよび蒸発金属としてTiをそれ
ぞれ用いてイオンプレーテイングを行ない、本体
および蓋体の内外両面に膜厚5μｍのTiN皮膜を
形成した。上記において、イオンプレーテイング
のさいのN2ガスの圧力は1torr本体および蓋体の
温度は200℃としておいた。そして、上記箱状本
体および蓋体を、温度150℃のSiCl4ガス雰囲気中
に1000時間放置して本体および蓋体の耐食性を調
べた。その結果、本体および蓋体の表面には腐食
は発生していなかつた。Example 1 First, a box-shaped main body and a lid for a vacuum chamber were made from aluminum material. Next, after spatter cleaning these surfaces, ion plating was performed using N 2 gas as a reactive gas and Ti as an evaporated metal to form a TiN film with a thickness of 5 μm on both the inside and outside of the main body and lid. was formed. In the above, the pressure of N 2 gas during ion plating was set at 1 torr, and the temperature of the main body and lid was set at 200°C. Then, the box-shaped main body and the lid were left in a SiCl 4 gas atmosphere at a temperature of 150° C. for 1000 hours, and the corrosion resistance of the main body and the lid was examined. As a result, no corrosion occurred on the surfaces of the main body and lid.
実施例 ２
イオンプレーテイングのさいの蒸発金属として
Alを用いた他は上記実施例１と同様にして本体
および蓋体の内外両面に膜厚10μｍのAlN皮膜を
形成し、同じく上記実施例１と同様にその耐食性
を調べた。その結果、本体および蓋体の表面には
腐食は発生していなかつた。Example 2 As vaporized metal during ion plating
Except for using Al, an AlN film with a thickness of 10 μm was formed on both the inner and outer surfaces of the main body and lid in the same manner as in Example 1 above, and the corrosion resistance thereof was examined in the same manner as in Example 1 above. As a result, no corrosion occurred on the surfaces of the main body and lid.
実施例 ３
イオンプレーテイングのさいの反応性ガスとし
てアセチレンを用いた他は上記実施例１と同様に
して本体および蓋体の内外両面に膜厚10μｍの
TiC皮膜を形成し、同じく上記実施例１と同様に
その耐食性を調べた。その結果、本体および蓋体
の表面には腐食は発生していなかつた。Example 3 A film with a thickness of 10 μm was applied to both the inner and outer surfaces of the main body and lid in the same manner as in Example 1, except that acetylene was used as the reactive gas during ion plating.
A TiC film was formed and its corrosion resistance was examined in the same manner as in Example 1 above. As a result, no corrosion occurred on the surfaces of the main body and lid.
実施例 ４
イオンプレーテイングのさいの蒸発金属として
Alを用いた他は上記実施例３と同様にして本体
および蓋体の内外両面に膜厚8μｍのAlC皮膜を形
成し、同じく上記実施例１と同様にその耐食性を
調べた。その結果、本体および蓋体の表面には腐
食は発生していなかつた。Example 4 As an evaporated metal during ion plating
Except for using Al, AlC films with a thickness of 8 μm were formed on both the inner and outer surfaces of the main body and lid in the same manner as in Example 3 above, and the corrosion resistance thereof was examined in the same manner as in Example 1 above. As a result, no corrosion occurred on the surfaces of the main body and lid.
実施例 ５
イオンプレーテイングのさいの蒸発金属として
Alを、反応性ガスとしてO2を用いた他は上記実
施例１と同様にして本体および蓋体の内外両面に
膜厚10μｍのAl2O3皮膜を形成し、同じく上記実
施例１と同様にその耐食性を調べた。その結果、
本体および蓋体の表面には腐食は発生していなか
つた。Example 5 As an evaporated metal during ion plating
An Al 2 O 3 film with a thickness of 10 μm was formed on both the inner and outer surfaces of the main body and lid in the same manner as in Example 1 above, except that Al was used as the reactive gas and O 2 was used as the reactive gas. We investigated its corrosion resistance. the result,
No corrosion occurred on the surfaces of the main body or lid.
比較例
まず、アルミニウム材から真空チヤンバ用箱状
本体および蓋体をつくつた。そして、上記箱状本
体および蓋体を、温度150℃のSiCl4ガス雰囲気中
に1000時間放置して本体および蓋体の耐食性を調
べた。その結果、本体および蓋体の表面は激しく
腐食していた。Comparative Example First, a box-shaped main body and a lid for a vacuum chamber were made from aluminum material. Then, the box-shaped main body and the lid were left in a SiCl 4 gas atmosphere at a temperature of 150° C. for 1000 hours, and the corrosion resistance of the main body and the lid was examined. As a result, the surfaces of the main body and lid were severely corroded.
発明の効果
この発明によるCVD装置およびドライ・エツ
チング装置における真空チヤンバの製造方法によ
れば、上述のように、従来のステンレス鋼製のも
のと比較して軽量で、熱伝導性が良く、さらにガ
ス放出量が少ない真空チヤンバを製造することが
できる。しかも、本体および蓋体をアルミニウム
材からつくるのであるから、ステンレス鋼材から
つくる場合に比較して加工が容易であるととも
に、材料費が安価になる。特に、製造された真空
チヤンバが熱伝導性に優れているので、従来のも
のに比べてCVD装置およびドライ・エツチング
装置の作動時のベーキング処理時間を短縮するこ
とができる。Effects of the Invention According to the method of manufacturing a vacuum chamber for a CVD device and a dry etching device according to the present invention, as described above, it is lighter in weight and has better thermal conductivity than the conventional one made of stainless steel. Vacuum chambers with low emissions can be manufactured. Moreover, since the main body and the lid are made from aluminum material, processing is easier and the material cost is lower than when they are made from stainless steel material. In particular, since the manufactured vacuum chamber has excellent thermal conductivity, baking processing time during operation of CVD equipment and dry etching equipment can be reduced compared to conventional vacuum chambers.
また、本体および蓋体の内外両面のうち少なく
とも内面に、イオンプレーテイング法によつて、
CVD法に使用される反応ガスおよびドライ・エ
ツチングに使用されるエツチング・ガスに対する
耐食性を有する皮膜を形成するので、CVD法お
よびドライ・エツチングに使用するガスに対する
耐食性がステンレス鋼製のものと同等かそれ以上
になる。しかも、形成された皮膜には、その形成
時に水分が吸着することはないので、このような
水分を除去する作業が不要になる。また、形成さ
れた皮膜に水分が吸着していることはないので、
製造された真空チヤンバをCVD装置およびドラ
イ・エツチング装置に使用した場合に、従来から
行われているベーキング処理を施すだけで、アル
ミニウムがステンレス鋼に比べて表面の放出ガス
係数が小さいことと相俟つて、CVD装置および
ドライ・エツチング装置の作動時の真空チヤンバ
内の真空度の低下を防止できる。 In addition, at least the inner surface of both the inner and outer surfaces of the main body and the lid is coated with an ion plating method.
It forms a film that has corrosion resistance against the reactive gases used in the CVD method and the etching gases used in dry etching, so its corrosion resistance against the gases used in the CVD method and dry etching is equivalent to that of stainless steel. It becomes more than that. Moreover, since moisture is not adsorbed to the formed film during its formation, there is no need to remove such moisture. In addition, since no moisture is adsorbed to the formed film,
When the manufactured vacuum chamber is used in CVD equipment and dry etching equipment, it is possible to simply apply the conventional baking treatment. Therefore, it is possible to prevent the degree of vacuum in the vacuum chamber from decreasing during operation of the CVD device and dry etching device.
Claims (1)
び蓋体をつくつた後、これらの内外両面のうち少
なくとも内面に、イオンプレーテイング法によつ
て、CVD法に使用される反応ガスおよびドラ
イ・エツチングに使用されるエツチング・ガスに
対する耐食性を有する皮膜を形成することを特徴
とするCVD装置およびドライ・エツチング装置
における真空チヤンバの製造方法。1. After making the box-shaped body and lid for the vacuum chamber made of aluminum, at least the inner surfaces of their inner and outer surfaces are coated with reactive gas used in the CVD method and dry etching using the ion plating method. A method for manufacturing a vacuum chamber in a CVD device and a dry etching device, the method comprising forming a film having corrosion resistance against etching gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24366285A JPS62103379A (en) | 1985-10-29 | 1985-10-29 | Manufacture of vacuum chamber in cvd apparatus and dry etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24366285A JPS62103379A (en) | 1985-10-29 | 1985-10-29 | Manufacture of vacuum chamber in cvd apparatus and dry etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62103379A JPS62103379A (en) | 1987-05-13 |
| JPH0553871B2 true JPH0553871B2 (en) | 1993-08-11 |
Family
ID=17107136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24366285A Granted JPS62103379A (en) | 1985-10-29 | 1985-10-29 | Manufacture of vacuum chamber in cvd apparatus and dry etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62103379A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112006002987T5 (en) | 2005-11-17 | 2008-10-02 | Kabushiki Kaisha Kobe Seiko Sho | Aluminum alloy element with excellent corrosion resistance |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6027792A (en) * | 1995-10-03 | 2000-02-22 | Kabushiki Kaisha Kobe Seiko Sho | Coating film excellent in resistance to halogen-containing gas corrosion and halogen-containing plasma corrosion, laminated structure coated with the same, and method for producing the same |
| US6533910B2 (en) | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
| US6537429B2 (en) | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
| US6613442B2 (en) | 2000-12-29 | 2003-09-02 | Lam Research Corporation | Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof |
| US6790242B2 (en) | 2000-12-29 | 2004-09-14 | Lam Research Corporation | Fullerene coated component of semiconductor processing equipment and method of manufacturing thereof |
| US6620520B2 (en) | 2000-12-29 | 2003-09-16 | Lam Research Corporation | Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof |
| US7128804B2 (en) | 2000-12-29 | 2006-10-31 | Lam Research Corporation | Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof |
| US6830622B2 (en) | 2001-03-30 | 2004-12-14 | Lam Research Corporation | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof |
-
1985
- 1985-10-29 JP JP24366285A patent/JPS62103379A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112006002987T5 (en) | 2005-11-17 | 2008-10-02 | Kabushiki Kaisha Kobe Seiko Sho | Aluminum alloy element with excellent corrosion resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62103379A (en) | 1987-05-13 |
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