JPH053365A - Distributed feedback laser - Google Patents
Distributed feedback laserInfo
- Publication number
- JPH053365A JPH053365A JP15355091A JP15355091A JPH053365A JP H053365 A JPH053365 A JP H053365A JP 15355091 A JP15355091 A JP 15355091A JP 15355091 A JP15355091 A JP 15355091A JP H053365 A JPH053365 A JP H053365A
- Authority
- JP
- Japan
- Prior art keywords
- distributed feedback
- layer
- feedback laser
- current signal
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000000903 blocking effect Effects 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 17
- 230000010355 oscillation Effects 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 12
- 239000013307 optical fiber Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000005253 cladding Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体レーザに関し、特
に単一軸モード発振する分布帰還型レーザに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser, and more particularly to a distributed feedback laser which oscillates in a single axis mode.
【0002】[0002]
【従来の技術】従来の分布帰還型レーザは図6に示すよ
うに、基板12の上に、クラッド層9活性層8、クラッ
ド層7、キャップ層6が作られ、上下に金属電極1,1
3が設けられている。また、クラッド層9には回折格子
14が作られ、両端面は反射防止膜15,16でコーテ
ィングされている。2. Description of the Related Art In a conventional distributed feedback laser, a clad layer 9, an active layer 8, a clad layer 7 and a cap layer 6 are formed on a substrate 12 as shown in FIG.
3 is provided. A diffraction grating 14 is formed in the clad layer 9, and both end faces are coated with antireflection films 15 and 16.
【0003】金属電極1を負極に、金属電極13を正極
に接続すると、金属電極1から電子が、金属電極13か
らホールが注入され、電子は正極側へ、ホールは負極側
へ進む。When the metal electrode 1 is connected to the negative electrode and the metal electrode 13 is connected to the positive electrode, electrons are injected from the metal electrode 1 and holes are injected from the metal electrode 13, so that the electrons go to the positive electrode side and the holes go to the negative electrode side.
【0004】しかし電子は、活性層8とクラッド層9の
間の電位障壁のため、活性層8に閉じ込められ、ホール
も活性層8とクラッド層7の間の電位障壁のために活性
層8に閉じ込められる。こうして活性層8に閉じ込めら
れた電子とホールは再結合し光を発生する。また、活性
層8の屈折率nはクラッド層7,9より大きいため、発
生した光も活性層8に閉じ込められる。発生した光は格
子周期がΛの回折格子14で反射され、回折次数がmの
場合、下記の数式1の条件を満す波長λ0 の光のみが選
択的にレーザ発振する(半導体レーザと応用技術米津宏
雄著参照)。さらに、両端面の反射防止膜15,16
は、ファブリペローモードが発振するのを防ぐために、
両端面の反射率を低減させている。However, the electrons are confined in the active layer 8 due to the potential barrier between the active layer 8 and the cladding layer 9, and the holes also enter the active layer 8 due to the potential barrier between the active layer 8 and the cladding layer 7. Be trapped. Thus, the electrons and holes trapped in the active layer 8 are recombined to generate light. Further, since the refractive index n of the active layer 8 is larger than that of the cladding layers 7 and 9, the generated light is also confined in the active layer 8. The generated light is reflected by the diffraction grating 14 having a grating period of Λ, and when the diffraction order is m, only the light of wavelength λ 0 satisfying the condition of the following formula 1 is selectively lased (semiconductor laser and application See Hiroo Yonezu Technology). Furthermore, the antireflection films 15 and 16 on both end surfaces
To prevent the Fabry-Perot mode from oscillating,
The reflectance of both end faces is reduced.
【0005】[0005]
【数1】 [Equation 1]
【0006】[0006]
【発明が解決しようとする課題】この従来の分布帰還型
レーザを用いてデータ伝送を行なった場合の問題につい
て例を挙げて説明する。The problem in the case of performing data transmission using this conventional distributed feedback laser will be described with an example.
【0007】図7はデータ伝送系の構成図である。分布
帰還型レーザにデータQを入力する。分布帰還型レーザ
20はデータに応じた光信号を出力し、その光信号は光
ファイバ18に入力され伝送されて、光受信機19にお
いて再生される。FIG. 7 is a block diagram of a data transmission system. Data Q is input to the distributed feedback laser. The distributed feedback laser 20 outputs an optical signal corresponding to the data, and the optical signal is input to the optical fiber 18, transmitted, and reproduced by the optical receiver 19.
【0008】この時、データQのマーク率が図8のよう
に時間的に変化するとする。マーク率が変化すると、レ
ーザに注入されるキャリアの時間的平均値が変化するこ
とになる。注入されるキャリアの数が多くなるとレーザ
の発熱量が多くなり、レーザチップの物理的寸法及び屈
折率が増加するため、数式1に従ってレーザの発振波長
λ0 は長波長側へシフトする。即ち、マーク率と発振波
長の関係は図9のように示され、マーク率の変動に従っ
て発振波長λ0 も変動する。このような光信号を光ファ
イバで伝送させると、光ファイバの波長分散の影響で、
光信号の群速度が発振波長の変動と共に変化し、図10
のように、(a)に示す光信号波長は(b)に示すよう
に位相ジッタを生じ、伝送特性が劣化するという問題点
があった。At this time, it is assumed that the mark ratio of the data Q changes with time as shown in FIG. When the mark ratio changes, the temporal average value of carriers injected into the laser changes. When the number of injected carriers increases, the amount of heat generated by the laser increases, and the physical size and refractive index of the laser chip increase. Therefore, the oscillation wavelength λ 0 of the laser shifts to the long wavelength side according to Equation 1. That is, the relationship between the mark ratio and the oscillation wavelength is shown in FIG. 9, and the oscillation wavelength λ 0 also changes according to the change in the mark ratio. When such an optical signal is transmitted through an optical fiber, due to the chromatic dispersion of the optical fiber,
The group velocity of the optical signal changes with the fluctuation of the oscillation wavelength.
As described above, there is a problem that the optical signal wavelength shown in (a) causes phase jitter as shown in (b) and the transmission characteristics deteriorate.
【0009】本発明は従来のもののこのような問題点を
解決し、マーク率が時間的に変動する信号を波長分散を
有する光フィイバに伝送しても、位相ジッタの生じない
分布帰還型レーザを提供するものである。The present invention solves the above-mentioned problems of the prior art, and provides a distributed feedback laser in which phase jitter does not occur even when a signal whose mark ratio changes with time is transmitted to an optical fiber having chromatic dispersion. It is provided.
【0010】[0010]
【課題を解決するための手段】本発明の分布帰還型レー
ザは、単一軸モード発振する分布帰還型基板上にレーザ
発振する活性層と、この活性層にキャリアと光を閉じ込
めるクラッド層と、第1の電流信号を入力する第1の金
属電極と、該金属電極との接触抵抗を減少させるための
キャップ層と、活性層内で発生する光のうちある特定の
波長のみを選択する回折格子と、ファブリペローモード
の発振を抑える反射防止膜を両端面に有する分布帰還型
レーザにおいて、前記活性層、クラッド層、キャップ層
の両側の外方に、熱伝導性が比較的に良い電流ブロック
層及び第2の電流信号を流す抵抗層を外方に順に熱的に
密着して設け、さらに前記抵抗層に前記第2の副電流を
入力するための第2及び第3の金属電極を備えることを
特徴とする分布帰還型レーザが得られる。A distributed feedback laser according to the present invention comprises an active layer for lasing on a distributed feedback substrate which oscillates in a single axis mode, a clad layer for confining carriers and light in the active layer, and A first metal electrode for inputting a current signal of 1, a cap layer for reducing a contact resistance with the metal electrode, and a diffraction grating for selecting only a specific wavelength of light generated in the active layer In a distributed feedback laser having antireflection films for suppressing Fabry-Perot mode oscillation on both end faces, a current blocking layer having relatively good thermal conductivity is provided outside both sides of the active layer, the cladding layer, and the cap layer. A resistance layer for passing a second current signal is provided in thermal contact with the outside in order, and second and third metal electrodes for inputting the second sub-current are further provided in the resistance layer. Characteristic distribution Type laser is obtained.
【0011】また本発明によれば、第1の電流信号及び
第2のの電流信号の電流振幅を、該第1の電流信号によ
る分布帰還型レーザの発熱と該第2の電流信号による抵
抗層の発熱が信号の同じマーク率でほぼ等しくなるよう
に調整することを特徴とする、上記の分布帰還型レーザ
が得られる。Further, according to the present invention, the current amplitudes of the first current signal and the second current signal are determined by the heat generation of the distributed feedback laser by the first current signal and the resistance layer by the second current signal. The distributed feedback laser described above is obtained, characterized in that the heat generation of the above is adjusted so as to be substantially equal at the same mark ratio of the signal.
【0012】更に本発明によれば、第2の電流信号が第
1の主電流信号と負論理の関係にある事を特徴とする、
上記又はその前に記した分布帰還型レーザが得られる。Further, according to the present invention, the second current signal has a negative logic relationship with the first main current signal.
The distributed feedback laser described above or before that can be obtained.
【0013】[0013]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.
【0014】図1は本発明の分布帰還型レーザの一実施
例の断面図である。基板12の上に、レーザ発振する活
性層8と、該活性層8にキャリアと光を閉じ込めるクラ
ッド層7,9と、電流信号Qを入力する金属電極2と、
金属電極2との接触抵抗を減らすためのキャップ層6
と、活性層8で発生した光のうち、ある波長のみを選択
する回折格子14が形成されている。FIG. 1 is a sectional view of one embodiment of the distributed feedback laser of the present invention. On the substrate 12, an active layer 8 for laser oscillation, clad layers 7 and 9 for confining carriers and light in the active layer 8, a metal electrode 2 for inputting a current signal Q,
Cap layer 6 for reducing the contact resistance with the metal electrode 2
And a diffraction grating 14 that selects only a certain wavelength of the light generated in the active layer 8 is formed.
【0015】また前記各層の両側に、電流信号Qの負論
理データである電流信号Q- (通常はQの上部にバーを
配置するが、この印字が使用できないので右肩に配置す
る。図面では普通行われているように上部に記してあ
る。)を入力する金属電極1,3と、注入された電流に
よって熱を発生させるための抵抗層10,11と、電流
信号QとQ- を分離する電流ブロック層4,5が形成さ
れている。[0015] on opposite sides of each layer, the current signal Q is negative logic data of the current signal Q -. While (typically place the bar at the top of the Q, since the printing can not be used to place on the right shoulder in the drawings The metal electrodes 1 and 3 for inputting) are input, the resistance layers 10 and 11 for generating heat by the injected current, and the current signals Q and Q − are separated. The current blocking layers 4 and 5 are formed.
【0016】更に基板12の下には、金属電極2と1,
3とに対する共通の金属電極13が形成され、レーザチ
ップの両端面にはファブリプローモードの発振を抑える
ために反射防止膜15,16が形成されている。Below the substrate 12, the metal electrodes 2 and 1,
A common metal electrode 13 is formed on the both ends of the laser chip, and antireflection films 15 and 16 are formed on both end surfaces of the laser chip in order to suppress oscillation in the Fabry-Pro mode.
【0017】図2は本発明のレーザをデータ伝送系に用
いた場合の例である。本発明レーザ17において、伝送
する信号データQをQ入力に入力し、データQの負論理
データQ- をQ- 入力に入力する。データQは光信号に
変換され、光ファイバ18で伝送され、光受信機19で
再生させる。データQ- は抵抗対10,11を加熱する
だけでそれ以上の事はしない。FIG. 2 shows an example in which the laser of the present invention is used in a data transmission system. In the laser 17 of the present invention, the signal data Q to be transmitted is input to the Q input, and the negative logic data Q − of the data Q is input to the Q − input. The data Q is converted into an optical signal, transmitted through the optical fiber 18, and reproduced by the optical receiver 19. Data Q - is not any further possible simply by heating the resistor pair 10, 11.
【0018】図3はデータQとデータQ- のマーク率の
時間的変化を表わしており、データQのマーク率が1/
2から1/3に変化しても、データQ- のマーク率が1
/2から2/3に変化するため、レーザに注入される電
流信号のマーク率は常に1となる。従って、データQと
データQ- の電流振幅を、データQによるレーザの熱の
発生がデータQ- による抵抗層10、11の熱の発生に
ほぼ等しくなるように調整することによって、マーク率
が変動しても本発明のレーザ17の温度は一定に保たれ
る。即ち、図4のように本発明のレーザ17の発振波長
はマーク率によらず一定となる。従って、本発明のレー
ザを用いてマーク率が時間的に変動するデータ信号を波
長分散を持つ光ファイバで伝送しても、図5に示すよう
に、(a)に示す光波形は伝送によって(b)に示す伝
送波形になり、位相ジッタが増加する事がなく、伝送特
性が劣化しない。FIG. 3 shows the change over time in the mark ratio of the data Q and the data Q − , and the mark ratio of the data Q is 1 /.
Be varied from 2 to 1/3, data Q - mark rate of 1
Since it changes from / 2 to 2/3, the mark ratio of the current signal injected into the laser is always 1. Therefore, by adjusting the current amplitudes of the data Q and the data Q − so that the heat generation of the laser due to the data Q becomes almost equal to the heat generation of the resistance layers 10 and 11 due to the data Q − , the mark ratio varies. Even so, the temperature of the laser 17 of the present invention is kept constant. That is, as shown in FIG. 4, the oscillation wavelength of the laser 17 of the present invention is constant regardless of the mark rate. Therefore, even if the laser of the present invention is used to transmit a data signal whose mark ratio fluctuates with time through an optical fiber having wavelength dispersion, as shown in FIG. 5, the optical waveform shown in FIG. The transmission waveform is as shown in b), the phase jitter does not increase, and the transmission characteristics do not deteriorate.
【0019】[0019]
【発明の効果】以上説明したように本発明は、従来の分
布帰還型レーザの両側に抵抗層を設け、そこに、レーザ
発振領域に注入するデータ信号と一定の関係にあるデー
タ電流信号を注入すればマーク率が時間的に変動する信
号を波長分散を有する光ファイバで伝送しても、位相ジ
ッタを生じないという効果を有する。As described above, according to the present invention, a resistance layer is provided on both sides of a conventional distributed feedback laser, and a data current signal having a constant relationship with a data signal injected into a laser oscillation region is injected therein. By doing so, even if a signal whose mark rate fluctuates with time is transmitted through an optical fiber having wavelength dispersion, there is an effect that phase jitter does not occur.
【図1】本発明の分布帰還型レーザの正面及び側面図。FIG. 1 is a front view and a side view of a distributed feedback laser of the present invention.
【図2】本発明のレーザの使用例を示す図。FIG. 2 is a diagram showing an example of use of the laser of the present invention.
【図3】図2で示した信号の信号波形図。FIG. 3 is a signal waveform diagram of the signal shown in FIG.
【図4】本発明のレーザの印加信号のマーク率と発振波
長の関係の一例を示す図。FIG. 4 is a diagram showing an example of a relationship between a mark ratio of an applied signal of a laser of the present invention and an oscillation wavelength.
【図5】図2における光ファイバ伝送前後の光波形を示
す図。5 is a diagram showing optical waveforms before and after the optical fiber transmission in FIG.
【図6】従来の分布帰還型レーザの正面及び側面図。FIG. 6 is a front view and a side view of a conventional distributed feedback laser.
【図7】従来のレーザの使用例を示す図。FIG. 7 is a diagram showing an example of use of a conventional laser.
【図8】図7で示した信号の信号波形図。FIG. 8 is a signal waveform diagram of the signal shown in FIG.
【図9】従来のレーザの印加信号のマーク率と発振波長
の関係の一例を示す図。FIG. 9 is a diagram showing an example of a relationship between a mark ratio of an applied signal of a conventional laser and an oscillation wavelength.
【図10】図7における光ファイバ伝送前後の光波長図
である。10 is an optical wavelength diagram before and after the optical fiber transmission in FIG.
1,2,3 金属電極 4,5 電流ブロック層 6 キャップ層 7 クラッド層 8 活性層 9 クラッド層 10,11 抵抗層 12 基板 13 金属電極 14 回折格子 15,16 反射防止膜 17 分布帰還型レーザ 18 光ファイバ 19 光受信機 20 分布帰還型レーザ 21 位相ジッタ 1,2,3 metal electrodes 4,5 Current blocking layer 6 Cap layer 7 Clad layer 8 Active layer 9 Clad layer 10,11 Resistance layer 12 substrates 13 metal electrodes 14 diffraction grating 15,16 Anti-reflection film 17 Distributed feedback laser 18 optical fiber 19 Optical receiver 20 Distributed feedback laser 21 Phase jitter
Claims (3)
の活性層にキャリアと光を閉じ込めるクラッド層と、第
1の電流信号を入力する第1の金属電極と、該金属電極
との接触抵抗を減少させるためのキャップ層と、活性層
内で発生する光のうちある特定の波長のみを選択する回
折格子と、ファブリペローモードの発振を抑える反射防
止膜を両端面に有する分布帰還型レーザにおいて、前記
活性層、クラッド層、キャップ層の両側の外方に、熱伝
導性が比較的に良い電流ブロック層及び第2の電流信号
を流す抵抗層を外方に順に熱的に密着して設け、さらに
前記抵抗層に前記第2の副電流を入力するための第2及
び第3の金属電極を備えることを特徴とする分布帰還型
レーザ。1. A contact between an active layer for laser oscillation, a clad layer for confining carriers and light in the active layer, a first metal electrode for inputting a first current signal, and a contact with the metal electrode on a substrate. A distributed feedback laser having a cap layer for reducing resistance, a diffraction grating for selecting only a specific wavelength of light generated in the active layer, and an antireflection film for suppressing Fabry-Perot mode oscillation on both end faces. In the above, a current blocking layer having a relatively good thermal conductivity and a resistance layer for flowing a second current signal are thermally adhered to the outside on both sides of the active layer, the clad layer and the cap layer in order. A distributed feedback laser, wherein the distributed feedback laser is provided, and further comprises second and third metal electrodes for inputting the second sub-current to the resistance layer.
幅を、該第1の電流信号による分布帰還型レーザの発熱
と該第2の電流信号による抵抗層の発熱が信号の同じマ
ーク率でほぼ等しくなるように調整することを特徴とす
る、請求項1の分布帰還型レーザ。2. A mark ratio in which the first current signal and the current amplitudes of the current signals are the same when the heat of the distributed feedback laser due to the first current signal and the heat of the resistance layer due to the second current signal are the same signal. 2. The distributed feedback laser according to claim 1, wherein the distributed feedback laser is adjusted so that
論理の関係にある事を特徴とする、請求項1又は請求項
2の分布帰還型レーザ。3. The distributed feedback laser according to claim 1 or 2, wherein the second current signal has a negative logic relationship with the first main current signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15355091A JPH053365A (en) | 1991-06-25 | 1991-06-25 | Distributed feedback laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15355091A JPH053365A (en) | 1991-06-25 | 1991-06-25 | Distributed feedback laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH053365A true JPH053365A (en) | 1993-01-08 |
Family
ID=15564962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15355091A Withdrawn JPH053365A (en) | 1991-06-25 | 1991-06-25 | Distributed feedback laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH053365A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5711368A (en) * | 1995-07-06 | 1998-01-27 | Nippondenso Co., Ltd. | Air conditioning apparatus for a vehicle |
| US5755107A (en) * | 1994-09-22 | 1998-05-26 | Denso Corporation | Automotive air conditioner |
-
1991
- 1991-06-25 JP JP15355091A patent/JPH053365A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5755107A (en) * | 1994-09-22 | 1998-05-26 | Denso Corporation | Automotive air conditioner |
| US6834709B2 (en) | 1994-09-22 | 2004-12-28 | Denso Corporation | Automotive air conditioner |
| US5711368A (en) * | 1995-07-06 | 1998-01-27 | Nippondenso Co., Ltd. | Air conditioning apparatus for a vehicle |
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| Date | Code | Title | Description |
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| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980903 |