JPH0520991Y2

JPH0520991Y2 -

Info

Publication number: JPH0520991Y2
Application number: JP1987142165U
Authority: JP
Priority date: 1987-09-17
Filing date: 1987-09-17
Publication date: 1993-05-31
Anticipated expiration: 2002-09-17
Also published as: JPS6446722U

Description

【考案の詳細な説明】（産業上の利用分野）本考案は、日射状態に応じて車両室内の空調を
調節するための日射状態検出装置に関する。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a solar radiation state detection device for adjusting air conditioning in a vehicle interior according to the solar radiation state.

（従来の技術）従来、車両室内に入射する日射状態を検出する
ために、複数の受光素子および遮光部を１つの基
台に載置した日射検出器が実公昭58−37694に提
案されている。(Prior art) Conventionally, in order to detect the state of solar radiation entering a vehicle interior, a solar radiation detector in which a plurality of light receiving elements and a light shielding part are mounted on one base was proposed in Publication of Utility Model Publication No. 58-37694. .

（考案が解決しようとする問題点）しかし、複数個の受光素子を使用することによ
り、受光素子の特性のバラツキのため日射状態を
精度よく検出することが困難で、また複数個の受
光素子を使用するため日射検出器を構成する部品
点数が多くなり、形状も大きくなるなどの問題点
がある。(Problem that the invention aims to solve) However, by using multiple light receiving elements, it is difficult to accurately detect the solar radiation state due to variations in the characteristics of the light receiving elements. There are problems such as the number of parts that make up the solar radiation detector increases and the size of the solar radiation detector increases.

（問題点を解決する為の手段）本考案は、前記問題点を解決した日射状態検出
装置を提供する目的でなされ、そのために下記技
術手段を採用する。すなわち、車両のインストー
ルメントパネルに組付けられた日射状態検出器
と、該日射状態検出器で検出された信号を入力し
て日射状態を演算する演算手段とにより成る日射
状態検出装置において、前記日射状態検出器は少
なくとも頭部が減光材料で形成され、前記頭部の
内面に直径方向突壁を形成した円筒台状ケース
と、前記円筒台状ケース内側に嵌合可能な１つの
半導体位置検出素子を固着した基台とより構成し
たことを特徴とし、日射状態検出器に組込まれる
半導体位置検出素子は１つで日射量および日射方
向を同時に検出する。(Means for Solving the Problems) The present invention has been made for the purpose of providing a solar radiation state detection device that solves the above problems, and for this purpose, the following technical means are adopted. That is, in a solar radiation state detection device comprising a solar radiation state detector assembled to an installation panel of a vehicle and a calculation means for calculating a solar radiation state by inputting a signal detected by the solar radiation state detector, The state detector includes a cylindrical table-shaped case in which at least a head part is formed of a light-attenuating material, and a diametrically protruding wall is formed on the inner surface of the head part, and one semiconductor position detector that can be fitted inside the cylindrical table-shaped case. It is characterized by being composed of a base to which an element is fixed, and a single semiconductor position detection element incorporated in the solar radiation state detector simultaneously detects the amount of solar radiation and the direction of solar radiation.

（作用）日射状態検出器を構成している突壁は１つの半
導体位置検出素子表面を複数に区分し日射状態に
より突壁は前記の複数に区分された半導体位置検
出素子表面に減光域あるいは遮光域を形成し、前
記複数に区分された半導体位置検出素子表面の日
射の照射表面の大きさに応じた光電流を発生し、
その光電流を増幅、演算し日射方向出力信号およ
び日射量出力信号として各々出力する。(Function) The protruding wall constituting the solar radiation state detector divides the surface of one semiconductor position detecting element into a plurality of parts, and depending on the solar radiation state, the protruding wall divides the surface of the semiconductor position detecting element divided into the plurality of parts into a dimming area or forming a light shielding area and generating a photocurrent according to the size of the solar radiation irradiation surface of the semiconductor position detection element surface divided into the plurality;
The photocurrent is amplified, calculated, and output as a solar radiation direction output signal and a solar radiation amount output signal, respectively.

（実施例の構成およびその作用）図中同一構成要素には同一符号を付して、重複
する説明を省略する。第１図乃至第３図は本考案
に一次元半導体位置検出素子を適用した一実施例
を示すもので、車両室内のインストルーメントパ
ネル６には、日射状態検出器７ａが組付けられて
おり日射状態検出器７ａは頭部８ａが減光材料で
形成され、頭部８ａの内面には、直角方向に日射
を減光するための直径方向突壁９を形成した円筒
台状ケース１０ａ内に、半導体位置検出素子１ａ
を上面に固着した円筒台状基台１１ａを組み込む
ように構成されている。半導体位置検出素子１ａ
よりのリード線１２ａ，１２ｂ，１２ｃがインス
トルーメントパネル６の内部方向に延伸されてい
る。(Configuration of the embodiment and its operation) Identical components in the drawings are denoted by the same reference numerals, and redundant explanation will be omitted. Figures 1 to 3 show an embodiment in which a one-dimensional semiconductor position detection element is applied to the present invention. The state detector 7a has a head 8a made of a light-attenuating material, and is housed in a cylindrical table-shaped case 10a in which a diametrically protruding wall 9 is formed on the inner surface of the head 8a to attenuate solar radiation in the right angle direction. Semiconductor position detection element 1a
It is configured to incorporate a cylindrical table-like base 11a having a cylindrical base 11a fixed to the upper surface. Semiconductor position detection element 1a
Stranded lead wires 12a, 12b, and 12c extend toward the inside of the instrument panel 6.

このように構成された日射状態検出器７ａに、
第４図に示すように日射２があたる場合、頭部８
ａの直角方向突壁９が減光作用を行い、基台１１
ａに固着されている半導体位置検出素子１ａの上
面に減光域１３を生じさせる。従つて頭部８ａの
直角方向突壁９を中心として、半導体位置検出素
子１ａの右方向の受光量が減少し、半導体位置検
出素子１ａよりの出力信号として、リード線１２
ａ，１２ｂよりの光電流をそれぞれi_A，i_Bととす
るとi_A＞i_Bとなる。尚、直径方向突壁９を遮光材
料で形成し、減光域のかわりに遮光域を生じさせ
てもよい。 In the solar radiation state detector 7a configured in this way,
When sunlight 2 hits the head as shown in Figure 4, the head 8
The orthogonal projecting wall 9 of a performs a light reduction effect, and the base 11
A light attenuation area 13 is produced on the upper surface of the semiconductor position detection element 1a fixed to the semiconductor position detection element 1a. Therefore, the amount of light received in the right direction of the semiconductor position detecting element 1a decreases, centering on the perpendicular projecting wall 9 of the head 8a, and the lead wire 12
Let i _A and i _B be the photocurrents from a and 12b, respectively, then i _A > i _B. Note that the diametrically protruding wall 9 may be formed of a light-blocking material to create a light-blocking area instead of the light-attenuating area.

第５図は本考案の日射状態検出装置の回路説明
図で日射状態検出器７ａよりの信号電流i_A，i_Bは
それぞれ増幅器１４，１５に入力され、それぞれ
の出力電流I_A，I_Bは加算回路１６に入力される。
同時に、増幅器１４，１５の出力電流I_A，I_Bは減
算回路１７に入力される。加算回路１６よりの出
力は除算回路１８および加算回路１９に入力さ
れ、除算回路１８には減算回路１７からの出力も
入力されるようになつている。除算回路１８にて
加算回路１６と減算回路１７の各々の出力の比に
定数k₁を乗じ、日射方向出力信号として２０より
出力され、加算回路１９にて加算回路１６の出力
に定数k₂を乗じ、日射量出力信号として２１より
出力される。 FIG. 5 is a circuit diagram of the solar radiation state detection device of the present invention. The signal currents i _A and i _B from the solar radiation state detector 7a are input to amplifiers 14 and 15, respectively, and the respective output currents I _A and I _B are It is input to the adder circuit 16.
At the same time, the output currents I _A and I _B of the amplifiers 14 and 15 are input to the subtraction circuit 17 . The output from the adder circuit 16 is input to a divider circuit 18 and an adder circuit 19, and the output from the subtracter circuit 17 is also input to the divider circuit 18. The division circuit 18 multiplies the ratio of the respective outputs of the addition circuit 16 and the subtraction circuit 17 by a constant k ₁ , which is output from 20 as a solar radiation direction output signal, and the addition circuit 19 multiplies the output of the addition circuit 16 by a constant k ₂ . The product is multiplied and outputted from 21 as a solar radiation output signal.

次に作用について説明する。 Next, the effect will be explained.

以上の構成において、例えば、第４図に示す如
く、１つの半導体位置検出素子１ａにより構成さ
れている日射状態検出器に日射２が左方向より照
射した場合、直径方向突壁９を中心として左右に
２区分されている半導体位置検出素子１ａの左側
表面には全ての表面に日射が照射され、右側表面
には直径方向突壁９により生ずる減光域１３部分
を差し引いた表面にのみ日射が照射され、左側と
右側表面では左側の方が日射の照射表面は大きく
なり、従つて発生する光電流も右側よりも左側の
方が大きくなる。これらの光電流を第５図に示す
増幅器にて増幅し、演算回路にて加算して日射量
出力信号と、除算して日射方向出力信号を出力す
る。これら日射出力信号および日射方向出力信号
は図示していない空調制御部材に入力され日射状
態に応じた車室内空調を行う。 In the above configuration, for example, as shown in FIG. 4, when the solar radiation state detector composed of one semiconductor position detection element 1a is irradiated with solar radiation 2 from the left direction, The entire left side surface of the semiconductor position detection element 1a, which is divided into two sections, is irradiated with solar radiation, and the right side surface is irradiated with solar radiation only on the surface minus the attenuation area 13 caused by the diametrically protruding wall 9. Therefore, the surface irradiated by solar radiation is larger on the left side than on the right side, and the photocurrent generated is also larger on the left side than on the right side. These photocurrents are amplified by the amplifier shown in FIG. 5, added by an arithmetic circuit to output a solar radiation amount output signal, and divided to output a solar radiation direction output signal. These solar radiation output signals and solar radiation direction output signals are input to an air conditioning control member (not shown) to air condition the vehicle interior according to the solar radiation state.

第６図乃至第８図も同じく他の実施例で二次元
半導体位置検出素子を適用したもので、二次元半
導体位置検出器７ｂは、減光材料よりなる頭部８
ｂの内面に十字状突壁２２を形成した円筒台状ケ
ース１０ｂ内に、１つの二次元半導体位置検出素
子１ｂを上面に固着した円筒台状基台１１ｂが組
み込まれ、前記十字状突壁２２により前記二次元
半導体位置検出素子１ｂの上表面面積が４等分さ
れるように構成され、二次元半導体位置検出素子
１ｂよりリード線２３ａ，２３ｂ，２３ｃ，２３
ｄ，２３ｅがインストルーメントパネル６の内部
方向に延伸されている。 6 to 8 also show other embodiments in which a two-dimensional semiconductor position detection element is applied, and the two-dimensional semiconductor position detector 7b has a head 8 made of a light-attenuating material.
A cylindrical platform base 11b having one two-dimensional semiconductor position detecting element 1b fixed to its upper surface is incorporated into a cylindrical platform case 10b having a cross-shaped projecting wall 22 formed on the inner surface of b. The upper surface area of the two-dimensional semiconductor position detecting element 1b is divided into four equal parts, and the lead wires 23a, 23b, 23c, 23 are connected to the two-dimensional semiconductor position detecting element 1b.
d and 23e extend toward the inside of the instrument panel 6.

第９図は模式的に図示した二次元半導体位置検
出器７ｂよりの信号電流i_A，i_B，i_C，i_Dが各々増幅
器２４，２５，２６，２７により増幅され各々
I_A，I_B，I_C，I_Dとして出力され、増幅器２４，２
５よりの出力I_A，I_Bは加算回路２８および減算回
路３０に入力される。増幅器２６，２７よりの出
力I_C，I_Dは加算回路２９および減算回路３１に入
力される。加算回路２８および減算回路３０の出
力は除算回路３２に入力され、両者の比に定数
K₁を乗じ日射の左右方向出力信号として、３５
より出力される。同様に加算回路２９および減算
回路３１の出力が除算回路３３に入力され両者の
比に定数K₂を乗じ日射の上下方向出力信号とし
て３６より出力される。加算回路２８および２９
の出力は加算回路３４に入力され定数K₃を乗じ、
日射量出力信号として３７より出力される。 FIG. 9 schematically shows signal currents i _A , i _B , i _C , i _D from the two-dimensional semiconductor position detector 7b each amplified by amplifiers 24 , 25 , 26 , and 27 .
It is output as I _A , I _B , I _C , and I _D , and the amplifiers 24 and 2
The outputs I _A and I _B from 5 are input to an adder circuit 28 and a subtracter circuit 30 . The outputs I _C and _ID from the amplifiers 26 and 27 are input to an addition circuit 29 and a subtraction circuit 31 . The outputs of the adder circuit 28 and the subtracter circuit 30 are input to the divider circuit 32, and the ratio between them is set as a constant.
Multiplied by K ₁ and used as the horizontal output signal of solar radiation, 35
It is output from Similarly, the outputs of the adder circuit 29 and the subtracter circuit 31 are input to the divider circuit 33, the ratio of the two is multiplied by a constant _K2 , and the resultant signal is output from 36 as an output signal in the vertical direction of solar radiation. Adder circuits 28 and 29
The output of is input to the adder circuit 34 and multiplied by a constant _K3 ,
It is output from 37 as a solar radiation output signal.

本実施例の作用については、第５図の実施に同
様の除算回路を１つ加えたのみであるので、説明
を省略する。 Regarding the operation of this embodiment, since only one division circuit similar to the embodiment shown in FIG. 5 is added, a description thereof will be omitted.

（考案の効果）以上説明したように、本考案に係る日射状態検
出装置は１つの半導体位置検出素子で構成してい
るため、半導体位置検出素子の製造上のバラツキ
に関係なく精度よく日射状態を検出することがで
き、部品点数が少ないため構造が簡単で、小型化
され、製造コストの低減にも貢献することができ
る。(Effect of the invention) As explained above, since the solar radiation state detection device according to the present invention is composed of one semiconductor position detection element, it can accurately detect the solar radiation state regardless of manufacturing variations in the semiconductor position detection element. Since the number of parts is small, the structure is simple and compact, and it can also contribute to reducing manufacturing costs.

[Brief explanation of the drawing]

第１図は本考案に一次元半導体位置検出素子を
適用した平面図、第２図は同じく縦断面図、第３
図は日射状態検出器の頭部８ａの斜視図、第４図
は、第１図乃至第３図に示す、日射状態検出器に
おける減光あるいは遮光作用の説明図、第５図は
本考案に一次元半導体位置検出素子を適用した日
射状態検出装置の回路説明図、第６図は本考案に
二次元半導体位置検出素子を適用した日射状態検
出器の縦断面図、第７図は同じく平面図、第８図
は日射状態検出器の頭部８ｂの斜視図、第９図は
本考案に二次元半導体位置検出素子を適用した日
射状態検出装置の回路説明図。１ａ……一次元半導体位置検出素子、１ｂ……
二次元半導体位置検出素子、６……インストルー
メントパネル、７ａ，７ｂ……日射状態検出器、
８ａ，８ｂ……頭部、９……直径方向突壁、１０
ａ，１０ｂ……円筒台状ケース、１１ａ，１１ｂ
……基台、１４，１５，２４，２５，２６，２７
……増幅器、１６，１９，２８，２９，３４……
加算回路、１７，３０，３１……減算回路、１
８，３２，３３……除算回路、２２……十字状突
壁。 Figure 1 is a plan view of a one-dimensional semiconductor position detection element applied to the present invention, Figure 2 is a longitudinal sectional view, and Figure 3 is a vertical cross-sectional view.
The figure is a perspective view of the head 8a of the solar radiation condition detector, FIG. 4 is an explanatory diagram of the light reduction or shading effect in the solar radiation condition detector shown in FIGS. 1 to 3, and FIG. 5 is a diagram according to the present invention. A circuit explanatory diagram of a solar radiation state detection device using a one-dimensional semiconductor position detection element, FIG. 6 is a vertical cross-sectional view of a solar radiation state detector using a two-dimensional semiconductor position detection element according to the present invention, and FIG. 7 is a plan view thereof. , FIG. 8 is a perspective view of the head 8b of the solar radiation state detector, and FIG. 9 is a circuit explanatory diagram of the solar radiation state detection device to which the two-dimensional semiconductor position detecting element is applied to the present invention. 1a...One-dimensional semiconductor position detection element, 1b...
Two-dimensional semiconductor position detection element, 6...Instrument panel, 7a, 7b...Solar radiation state detector,
8a, 8b... Head, 9... Diametrically projecting wall, 10
a, 10b... Cylindrical platform case, 11a, 11b
... Base, 14, 15, 24, 25, 26, 27
...Amplifier, 16, 19, 28, 29, 34...
Addition circuit, 17, 30, 31...Subtraction circuit, 1
8, 32, 33...Division circuit, 22...Cross-shaped projecting wall.

Claims

[Scope of utility model registration request]

In a solar radiation state detection device comprising a solar radiation state detector assembled to an installation panel of a vehicle and a calculation means for calculating a solar radiation state by inputting a signal detected by the solar radiation state detector, the solar radiation state detection The device includes a cylindrical table-like case in which at least a head part is formed of a light-attenuating material and a diametrically protruding wall is formed on the inner surface of the head part, and one semiconductor position detection element that can be fitted inside the cylindrical table-like case. A solar radiation state detection device characterized by comprising a fixed base.