JPH05198405A - Barium titanate based semiconductor porcelain composition - Google Patents
Barium titanate based semiconductor porcelain compositionInfo
- Publication number
- JPH05198405A JPH05198405A JP4031611A JP3161192A JPH05198405A JP H05198405 A JPH05198405 A JP H05198405A JP 4031611 A JP4031611 A JP 4031611A JP 3161192 A JP3161192 A JP 3161192A JP H05198405 A JPH05198405 A JP H05198405A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- barium titanate
- based semiconductor
- resistance
- crystal structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims description 29
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 title claims description 24
- 229910002113 barium titanate Inorganic materials 0.000 title claims description 24
- 229910052573 porcelain Inorganic materials 0.000 title claims description 12
- 239000013078 crystal Substances 0.000 claims abstract description 17
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- 229910052776 Thorium Inorganic materials 0.000 claims abstract description 3
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 3
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 229910052684 Cerium Inorganic materials 0.000 abstract description 2
- 229910010252 TiO3 Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- -1 Y 2O3 Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 239000011656 manganese carbonate Substances 0.000 description 1
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体磁器組成物に
関し、詳しくは、正の抵抗温度特性を有するチタン酸バ
リウム（ＢａＴｉＯ3）系半導体磁器組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor ceramic composition, and more particularly to a barium titanate (BaTiO 3 ) based semiconductor ceramic composition having a positive resistance temperature characteristic.
【０００２】[0002]
【従来の技術】近年、大きな正の抵抗温度特性を有する
チタン酸バリウム（ＢａＴｉＯ3）系半導体磁器組成物
が開発されている。このチタン酸バリウム系半導体磁器
組成物は、キュリー温度を越えると抵抗値が急激に増大
して、通過する電流量を減少させることから、回路の過
電流保護用や、テレビ受像機のブラウン管枠の消磁用な
ど種々の用途に広く用いられている。2. Description of the Related Art In recent years, barium titanate (BaTiO 3 ) based semiconductor porcelain compositions having a large positive resistance temperature characteristic have been developed. This barium titanate-based semiconductor porcelain composition has a resistance value that sharply increases when the Curie temperature is exceeded, and reduces the amount of current passing therethrough. Therefore, it is used for circuit overcurrent protection and for the CRT frame of a television receiver. Widely used for various purposes such as degaussing.
【０００３】[0003]
【発明が解決しようとする課題】しかし、従来のチタン
酸バリウム系半導体磁器組成物は、結晶構造が立方晶系
である温度範囲においては正の抵抗温度特性を有してい
るが、それより低温側の、結晶構造が正方晶系である温
度範囲においては負の抵抗温度特性を有している。した
がって、正方晶系の温度範囲から立方晶系の温度範囲に
かけての全温度範囲にわたって抵抗温度特性を数式化す
ることが極めて困難であり、例えば、チタン酸バリウム
系半導体磁器組成物からなる正特性サーミスタを用いた
回路の設計を理論的に正確かつ効率よく行うことができ
ず、その用途が制約されるという問題点がある。However, the conventional barium titanate-based semiconductor ceramic composition has a positive resistance temperature characteristic in the temperature range in which the crystal structure is cubic, but at a temperature lower than that. On the other hand, it has a negative resistance temperature characteristic in the temperature range where the crystal structure is tetragonal. Therefore, it is extremely difficult to formulate the resistance temperature characteristics over the entire temperature range from the tetragonal temperature range to the cubic temperature range, and for example, a positive temperature coefficient thermistor made of a barium titanate-based semiconductor ceramic composition is used. There is a problem in that a circuit design using is not theoretically accurate and efficient and its application is restricted.
【０００４】この発明は、上記問題点を解決するもので
あり、結晶構造が正方晶系の温度範囲においてもフラッ
トまたは正の抵抗温度特性を有するチタン酸バリウム系
半導体磁器組成物を提供することを目的とする。The present invention solves the above problems and provides a barium titanate-based semiconductor ceramic composition having a flat or positive resistance temperature characteristic even in a tetragonal temperature range. To aim.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、この発明のチタン酸バリウム系半導体磁器組成物
は、結晶構造が正方晶系である温度範囲においてはフラ
ットまたは正の抵抗温度特性を有し、かつ、結晶構造が
立方晶系である温度範囲においては正の抵抗温度特性を
有することを特徴とする。In order to achieve the above object, the barium titanate-based semiconductor ceramic composition of the present invention has a flat or positive resistance temperature characteristic in a temperature range in which the crystal structure is tetragonal. And has a positive resistance temperature characteristic in the temperature range in which the crystal structure is a cubic system.
【０００６】また、この発明のチタン酸バリウム系半導
体磁器組成物は、一般式： （Ｂａ1-V-WＳｒVＭｅW）ＴｉＯ3＋ｙＭｎ＋ｚＳｉＯ2 （但し、ＭｅはＹ，Ｌａ，Ｃｅなどの希土類元素、Ｎ
ｂ、Ｂｉ、Ｓｂ、Ｗ、Ｔｈ及びＴａからなる群から選ば
れる少なくとも１種）で表され、ｖ，ｗ，ｚがそれぞ
れ、 ｖ＝０．０１〜０．４ ｗ＝０．０００３〜０．００３ ｚ＝０．００１〜０．０４ の範囲にあり、かつ、ｗに対するｙの比が ０．３ ≦ ｙ／ｗ ≦ ４ の範囲にあることを特徴とする。The barium titanate-based semiconductor ceramic composition of the present invention has the general formula: (Ba 1 -VW Sr V Me W ) TiO 3 + yMn + zSiO 2 (where Me is a rare earth element such as Y, La or Ce, N
b, Bi, Sb, W, Th, and at least one selected from the group consisting of Ta), and v, w, and z are respectively v = 0.01 to 0.4 w = 0.0003 to 0. 003 z is in the range of 0.001 to 0.04, and the ratio of y to w is in the range of 0.3 ≤ y / w ≤ 4.
【０００７】[0007]
【実施例】以下に、この発明の実施例を比較例とともに
示して発明の特徴をさらに詳細に説明する。EXAMPLES The features of the present invention will be described in more detail below by showing Examples of the present invention together with Comparative Examples.
【０００８】（実施例１） 一般式：（Ｂａ0.88-WＳｒ0.12ＭｅW）ＴｉＯ3＋0.001Ｍｎ＋0.02ＳｉＯ2 で表されるチタン酸バリウム系半導体磁器組成物を製造
し、その抵抗温度特性を調べた。Example 1 A barium titanate-based semiconductor porcelain composition represented by the general formula: (Ba 0.88-W Sr 0.12 Me W ) TiO 3 + 0.001Mn + 0.02SiO 2 was prepared, and its resistance temperature characteristic was measured. Examined.
【０００９】ここで、ＭｅはＬａ、Ｃｅ、Ｐｒ、Ｎｄ、
Ｓｍ、Ｃｄ、Ｈｏ、Ｄｙ、Ｙ、Ｅｒの少なくとも１種で
ある。Here, Me is La, Ce, Pr, Nd,
It is at least one of Sm, Cd, Ho, Dy, Y, and Er.
【００１０】上記のチタン酸バリウム系半導体磁器組成
物を製造するにあたっては、まず、原料のＢａＣＯ3、
ＳｒＣＯ3、Ｌａ2Ｏ3、Ｃｅ2Ｏ3、Ｐｒ2Ｏ3、Ｎｄ
2Ｏ3、Ｓｍ 2Ｏ3、Ｃｄ2Ｏ3、ＨｏＯ、Ｄｙ2Ｏ3、Ｙ
2Ｏ3、Ｅｒ2Ｏ3、ＴｉＯ2、ＭｎＣＯ3、ＳｉＯ2を、表
１の組成になるように所定の割合で配合する。The above barium titanate-based semiconductor ceramic composition
When manufacturing a product, first, the raw material BaCO3,
SrCO3, La2O3, Ce2O3, Pr2O3, Nd
2O3, Sm 2 O3, Cd2O3, HoO, Dy2O3, Y
2O3, Er2O3, TiO2, MnCO3, SiO2The table
It is mixed at a predetermined ratio so that the composition becomes 1.
【００１１】次いで、この配合原料をポットミルで５時
間湿式混合し、脱水、乾燥した後１１５０℃で２時間仮
焼する。それから、得られた仮焼原料を粉砕し、バイン
ダである酢酸ビニルと混合し、造粒後、乾式プレスで長
辺１２mm、短辺７mm、厚さ４mmの角板に成型して試料を
作成した。そして、この試料を空気雰囲気中において１
３００〜１３７０℃の温度条件下に焼成して半導体磁器
（チタン酸バリウム系半導体磁器）を得た。Next, the mixed raw materials are wet mixed in a pot mill for 5 hours, dehydrated and dried, and then calcined at 1150 ° C. for 2 hours. Then, the obtained calcined raw material was pulverized, mixed with vinyl acetate as a binder, granulated, and then molded with a dry press into a square plate having a long side of 12 mm, a short side of 7 mm and a thickness of 4 mm to prepare a sample. .. Then, this sample is subjected to 1 in an air atmosphere.
A semiconductor porcelain (barium titanate-based semiconductor porcelain) was obtained by firing under a temperature condition of 300 to 1370 ° C.
【００１２】それから、得られた半導体磁器の両面にＩ
ｎ−Ｇａ合金を塗布して電極を形成し、常温における比
抵抗（ρ）、抵抗温度係数を測定した。その結果を表１
に示す。Then, on both sides of the obtained semiconductor porcelain, I
An n-Ga alloy was applied to form an electrode, and the specific resistance (ρ) and the temperature coefficient of resistance at room temperature were measured. The results are shown in Table 1.
Shown in.
【００１３】[0013]
【表１】 [Table 1]
【００１４】なお、表１の抵抗温度係数は、以下に説明
する方法により求めた。The temperature coefficient of resistance in Table 1 was determined by the method described below.
【００１５】図１は、この発明の実施例にかかるチタン
酸バリウム系半導体磁器（組成物）の抵抗温度特性の一
例を示す線図である。このような特性を有するチタン酸
バリウム系半導体磁器において、図１のａ領域（結晶構
造が正方晶系の温度範囲）の抵抗温度係数をＡ（％／
℃）、ｂ領域（結晶構造が立方晶系の温度範囲）の抵抗
温度係数をＢ（％／℃）とし、このＡ，Ｂを、次の式 Ａ，Ｂ＝｛（2.303×logＲ2／Ｒ1）／（Ｔ2−Ｔ1）｝×100 （％／℃） （但し、Ｔ1＜Ｔ2） Ｔ1：ａ領域内の任意の温度 Ｔ2：ｂ領域内の任意の温度 Ｒ1：Ｔ1における抵抗値 Ｒ2：Ｔ2における抵抗値 により求めた。FIG. 1 is a diagram showing an example of resistance temperature characteristics of a barium titanate-based semiconductor ceramic (composition) according to an embodiment of the present invention. In the barium titanate-based semiconductor ceramic having such characteristics, the temperature coefficient of resistance in the region a (the temperature range of the tetragonal crystal structure) of FIG. 1 is A (% /
° C.), b region (crystal structure is a resistance temperature coefficient of the temperature range) of cubic and B (% / ° C.), the A, a B, the following formula A, B = {(2.303 × logR 2 / R 1 ) / (T 2 −T 1 )} × 100 (% / ° C.) (where T 1 <T 2 ) T 1 : arbitrary temperature in a region T 2 : arbitrary temperature in b region R 1 : Resistance value at T 1 R 2 : Resistance value at T 2
【００１６】ここで、Ａ，Ｂの値が、 Ａ，Ｂ＞０のとき、抵抗温度特性が正特性 Ａ，Ｂ＝０のとき、抵抗温度特性がフラットな特性 Ａ，Ｂ＜０のとき、抵抗温度特性が負特性 であることを示す。Here, when the values of A and B are A and B> 0, the resistance temperature characteristic is a positive characteristic, and when A and B = 0, the resistance temperature characteristic is a flat characteristic. When A and B <0, It shows that the resistance temperature characteristic is a negative characteristic.
【００１７】なお、表１において、試料番号に＊を付し
たものは、この発明の範囲外の組成の比較例であり、そ
の他はこの発明の範囲内の実施例である。In Table 1, the sample numbers marked with * are comparative examples of compositions outside the scope of the present invention, and the others are examples within the scope of the present invention.
【００１８】表１に示すように、この発明の範囲外の比
較例では、Ａ＜０となっており、抵抗温度特性が負特性
であるのに対して、この発明の実施例にかかるチタン酸
バリウム系半導体磁器では、Ｍｅの全種類についてＡ≧
０となっており、結晶構造が正方晶系の温度範囲におい
て、フラットまたは正の抵抗温度特性を有するチタン酸
バリウム系半導体磁器が得られていることがわかる。As shown in Table 1, in the comparative examples outside the range of the present invention, A <0 and the resistance temperature characteristic is a negative characteristic, whereas the titanic acid according to the example of the present invention is In barium-based semiconductor porcelain, A ≧ A for all types of Me.
It is 0, which means that a barium titanate-based semiconductor ceramic having a flat or positive resistance-temperature characteristic is obtained in a tetragonal temperature range.
【００１９】（実施例２） 一般式：（Ｂａ0.88-WＳｒ0.12ＭｅW）ＴｉＯ3＋ｙＭｎ＋0.02ＳｉＯ2 で表されるチタン酸バリウム系半導体磁器組成物を、上
記実施例１の場合と同様の条件で製造し、ＭｅとＭｎの
含有比率などの影響を調べた。Example 2 A barium titanate-based semiconductor ceramic composition represented by the general formula: (Ba 0.88-W Sr 0.12 Me W ) TiO 3 + yMn + 0.02SiO 2 was used in the same manner as in Example 1 above. It was manufactured under the conditions, and the influence of the content ratio of Me and Mn was examined.
【００２０】表２に、この実施例の半導体磁器について
調べたＭｅ、Ｍｎの含有比率、常温における比抵抗
（ρ）、抵抗温度係数の関係を示す。Table 2 shows the relationships among the content ratios of Me and Mn, the specific resistance (ρ) at room temperature, and the temperature coefficient of resistance investigated for the semiconductor ceramics of this example.
【００２１】[0021]
【表２】 [Table 2]
【００２２】なお、表２において、試料番号に＊を付し
たものは、この発明の範囲外の組成の比較例であり、そ
の他はこの発明の範囲内の実施例である。表２に示すよ
うに、この発明の範囲外の比較例では、Ａ＜０となって
おり、抵抗温度特性が負特性であるのに対して、この発
明の実施例にかかるチタン酸バリウム系半導体磁器にお
いては、表２に示すようなＭｅとＭｎの含有比率におい
てＡ≧０となっており、結晶構造が正方晶系の温度範囲
においてフラットまたは正の抵抗温度特性を有している
ことがわかる。In Table 2, the sample numbers with * are comparative examples of compositions outside the scope of the present invention, and the others are examples within the scope of the present invention. As shown in Table 2, in the comparative examples outside the scope of the present invention, A <0, and the resistance temperature characteristic is a negative characteristic, whereas the barium titanate-based semiconductor according to the embodiment of the present invention. In the porcelain, the content ratio of Me and Mn as shown in Table 2 is A ≧ 0, and it is found that the crystal structure has a flat or positive resistance temperature characteristic in the tetragonal temperature range. ..
【００２３】また、Ｓｒ、ＳｉＯ2の含有量に関して
は、本願発明の範囲内で適宜含有率を調節することによ
り、抵抗温度特性をある程度制御することが可能であ
る。なお、図２は、Ｓｒの含有比率を変化させキュリー
点をシフトさせた２種類のチタン酸バリウム系半導体磁
器の抵抗温度特性を示しており、いずれも、結晶構造が
正方晶系の温度範囲で正の抵抗温度特性を有しているこ
とがわかる。Regarding the contents of Sr and SiO 2 , it is possible to control the resistance temperature characteristic to some extent by appropriately adjusting the contents within the scope of the present invention. Note that FIG. 2 shows resistance-temperature characteristics of two types of barium titanate-based semiconductor ceramics in which the Sr content ratio is changed and the Curie point is shifted. In both cases, the crystal structure is in a tetragonal temperature range. It can be seen that it has a positive resistance temperature characteristic.
【００２４】[0024]
【発明の効果】上述のように、この発明のチタン酸バリ
ウム系半導体磁器組成物は、結晶構造が正方晶系である
温度範囲においてフラットまたは正の抵抗温度特性を持
たせ、かつ、結晶構造が立方晶系である温度範囲におい
て正の抵抗温度特性を持たせるようにしているので、正
方晶系の温度範囲から立方晶系の温度範囲にかけての全
温度範囲にわたって抵抗温度特性を容易かつ正確に数式
化することが可能になり、正特性サーミスタなどを用い
た回路の設計を理論的に、正確かつ効率よく行うことが
できる。As described above, the barium titanate-based semiconductor ceramic composition of the present invention has flat or positive resistance temperature characteristics in the temperature range in which the crystal structure is tetragonal, and the crystal structure is Since it has a positive resistance temperature characteristic in the cubic temperature range, the resistance temperature characteristic can be easily and accurately calculated over the entire temperature range from the tetragonal temperature range to the cubic temperature range. Therefore, it is possible to theoretically, accurately and efficiently design a circuit using a positive temperature coefficient thermistor or the like.
【００２５】また、一般式：（Ｂａ1-V-WＳｒVＭｅW）
ＴｉＯ3＋ｙＭｎ＋ｚＳｉＯ2で表されるような組成にな
るように各成分を配合することにより、結晶構造が正方
晶系である温度範囲においてもフラットまたは正の抵抗
温度特性を有するチタン酸バリウム系半導体磁器組成物
を確実に得ることができる。The general formula: (Ba 1-VW Sr V Me W )
A barium titanate-based semiconductor porcelain having flat or positive resistance temperature characteristics even in a temperature range in which the crystal structure is a tetragonal system by blending the respective components so as to have a composition represented by TiO 3 + yMn + zSiO 2. The composition can be reliably obtained.
【図１】この発明の実施例のチタン酸バリウム系半導体
磁器組成物の抵抗温度特性を示す線図である。FIG. 1 is a diagram showing a resistance temperature characteristic of a barium titanate-based semiconductor ceramic composition according to an example of the present invention.
【図２】この発明の他の実施例のチタン酸バリウム系半
導体磁器組成物の抵抗温度特性を示す線図である。FIG. 2 is a diagram showing a resistance temperature characteristic of a barium titanate-based semiconductor ceramic composition according to another embodiment of the present invention.
ａ 結晶構造が正方晶系の温度範囲 ｂ 結晶構造が立方晶系の温度範囲 a Temperature range of tetragonal crystal structure b Temperature range of cubic crystal structure
Claims (2)
いてはフラットまたは正の抵抗温度特性を有し、かつ、
結晶構造が立方晶系である温度範囲においては正の抵抗
温度特性を有することを特徴とするチタン酸バリウム系
半導体磁器組成物。1. A flat or positive resistance temperature characteristic in a temperature range in which a crystal structure is a tetragonal system, and
A barium titanate-based semiconductor porcelain composition having a positive resistance temperature characteristic in a temperature range in which a crystal structure is cubic.
ｂ、Ｂｉ、Ｓｂ、Ｗ、Ｔｈ及びＴａからなる群から選ば
れる少なくとも１種）で表され、 ｖ，ｗ，ｚがそれぞれ、 ｖ＝０．０１〜０．４ ｗ＝０．０００３〜０．００３ ｚ＝０．００１〜０．０４ の範囲にあり、かつ、ｗに対するｙの比が ０．３ ≦ ｙ／ｗ ≦ ４ の範囲にあることを特徴とする請求項１記載のチタン酸
バリウム系半導体磁器組成物。2. A general formula: (Ba 1 -VW Sr V Me W ) TiO 3 + yMn + zSiO 2 (where Me is a rare earth element such as Y, La, or Ce, N
b, Bi, Sb, W, Th, and at least one selected from the group consisting of Ta), and v, w, and z are respectively v = 0.01 to 0.4 w = 0.0003 to 0. The barium titanate system according to claim 1, wherein z is in the range of 0.001 to 0.04, and the ratio of y to w is in the range of 0.3 ≤ y / w ≤ 4. Semiconductor porcelain composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03161192A JP3166787B2 (en) | 1992-01-21 | 1992-01-21 | Barium titanate-based semiconductor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03161192A JP3166787B2 (en) | 1992-01-21 | 1992-01-21 | Barium titanate-based semiconductor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05198405A true JPH05198405A (en) | 1993-08-06 |
| JP3166787B2 JP3166787B2 (en) | 2001-05-14 |
Family
ID=12336004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03161192A Expired - Fee Related JP3166787B2 (en) | 1992-01-21 | 1992-01-21 | Barium titanate-based semiconductor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3166787B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008193042A (en) * | 2006-07-28 | 2008-08-21 | Tdk Corp | Multilayer thermistor and manufacturing method thereof |
| JP2010254536A (en) * | 2009-04-28 | 2010-11-11 | Nichicon Corp | Positive thermistor porcelain composition |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6061463B2 (en) * | 2011-08-08 | 2017-01-18 | 日東電工株式会社 | Adhesive tape or sheet |
-
1992
- 1992-01-21 JP JP03161192A patent/JP3166787B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008193042A (en) * | 2006-07-28 | 2008-08-21 | Tdk Corp | Multilayer thermistor and manufacturing method thereof |
| JP2010254536A (en) * | 2009-04-28 | 2010-11-11 | Nichicon Corp | Positive thermistor porcelain composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3166787B2 (en) | 2001-05-14 |
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