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JPH05152609A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPH05152609A
JPH05152609A JP33601191A JP33601191A JPH05152609A JP H05152609 A JPH05152609 A JP H05152609A JP 33601191 A JP33601191 A JP 33601191A JP 33601191 A JP33601191 A JP 33601191A JP H05152609 A JPH05152609 A JP H05152609A
Authority
JP
Japan
Prior art keywords
light emitting
emitting element
light
emitting diode
resin mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33601191A
Other languages
Japanese (ja)
Inventor
Yoshiaki Tadatsu
芳昭 多田津
Shuji Nakamura
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP33601191A priority Critical patent/JPH05152609A/en
Publication of JPH05152609A publication Critical patent/JPH05152609A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】 【目的】 発光ピークが４３０ｎｍ付近、および３７０
ｎｍ付近にある窒化ガリウム系化合物半導体材料よりな
る発光素子を有する発光ダイオードの視感度を良くし、
またその輝度を向上させる。 【構成】 ステム上に発光素子を有し、それを樹脂モー
ルドで包囲してなる発光ダイオードにおいて、前記発光
素子が、一般式ＧａXＡｌ1-XＮ（但し０≦X≦１であ
る）で表される窒化ガリウム系化合物半導体よりなり、
さらに前記樹脂モールド中に、前記窒化ガリウム系化合
物半導体の発光により励起されて蛍光を発する蛍光染
料、または蛍光顔料が添加されてなる発光ダイオード。 (57) [Summary] [Purpose] The emission peak is around 430 nm, and 370
improve the visibility of a light emitting diode having a light emitting element made of a gallium nitride-based compound semiconductor material in the vicinity of nm,
It also improves its brightness. In a light emitting diode having a light emitting element on a stem and surrounding the light emitting element with a resin mold, the light emitting element is represented by the general formula Ga X Al 1-X N (where 0 ≦ X ≦ 1). Made of a gallium nitride-based compound semiconductor represented,
Further, a light emitting diode in which a fluorescent dye or a fluorescent pigment which is excited by the light emission of the gallium nitride compound semiconductor to emit fluorescence is added to the resin mold.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本考案は発光素子を樹脂モールド
で包囲してなる発光ダイオード（以下ＬＥＤという）に
係り、特に一種類の発光素子で多種類の発光ができ、さ
らに高輝度な波長変換発光ダイオードに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode (hereinafter referred to as an LED) in which a light emitting element is surrounded by a resin mold, and in particular, one type of light emitting element can emit many kinds of light, and further high brightness wavelength conversion. Regarding a light emitting diode.

【０００２】[0002]

【従来の技術】一般に、ＬＥＤは図１に示すような構造
を有している。１は１ｍｍ角以下に切断された例えばＧ
ａＡｌＡｓ、ＧａＰ等よりなる発光素子、２はメタルス
テム、３はメタルポスト、４は発光素子を包囲する樹脂
モールドである。発光素子１の裏面電極はメタルステム
２に銀ペースト等で接着され電気的に接続されており、
発光素子１の表面電極は他端子であるメタルポスト３か
ら伸ばされた金線によりその表面でワイヤボンドされ、
さらに発光素子１は透明な樹脂モールド４でモールドさ
れている。2. Description of the Related Art Generally, an LED has a structure as shown in FIG. 1 is, for example, G cut into 1 mm square or less
A light emitting element made of aAlAs, GaP, etc., 2 is a metal stem, 3 is a metal post, and 4 is a resin mold surrounding the light emitting element. The back surface electrode of the light emitting element 1 is electrically connected to the metal stem 2 by being bonded with silver paste or the like,
The surface electrode of the light emitting element 1 is wire-bonded on its surface by a gold wire extended from the metal post 3 which is another terminal,
Further, the light emitting element 1 is molded with a transparent resin mold 4.

【０００３】通常、樹脂モールド４は、発光素子の発光
を空気中に効率よく放出する目的で、屈折率が高く、か
つ透明度の高い樹脂が選択されるが、他に、その発光素
子の発光色を変換する目的で、あるいは色を補正する目
的で、その樹脂モールド４の中に着色剤として無機顔
料、または有機顔料が混入される場合がある。例えば、
ＧａＰの半導体材料を有する緑色発光素子の樹脂モール
ド中に、赤色顔料を添加すれば発光色は白色とすること
ができる。Generally, for the resin mold 4, a resin having a high refractive index and a high transparency is selected for the purpose of efficiently emitting the light emitted from the light emitting element into the air. In some cases, an inorganic pigment or an organic pigment is mixed as a colorant in the resin mold 4 for the purpose of converting the color or for correcting the color. For example,
When a red pigment is added to the resin mold of the green light emitting element having a GaP semiconductor material, the emission color can be white.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、従来、
樹脂モールドに着色剤を添加して波長を変換するという
技術はほとんど実用化されておらず、着色剤により色補
正する技術がわずかに使われているのみである。なぜな
ら、樹脂モールドに、波長を変換できるほどの非発光物
質である着色剤を添加すると、ＬＥＤそのもの自体の輝
度が大きく低下してしまうからである。[Problems to be Solved by the Invention] However, in the past,
The technique of adding a colorant to the resin mold to convert the wavelength has hardly been put into practical use, and the technique of color correction with the colorant is only slightly used. This is because when a colorant, which is a non-luminous substance capable of converting wavelength, is added to the resin mold, the brightness of the LED itself is significantly reduced.

【０００５】ところで、現在、ＬＥＤとして実用化され
ているのは、赤外、赤、黄色、緑色発光のＬＥＤであ
り、青色または紫外のＬＥＤは未だ実用化されていな
い。青色、紫外発光の発光素子はII-VI族のＺｎＳｅ、I
V-IV族のＳｉＣ、III-V族のＧａＮ等の半導体材料を用
いて研究が進められ、最近、その中でも一般式がＧａX
Ａｌ1-XＮ（但しXは０≦X≦１である。）で表される窒
化ガリウム系化合物半導体が、常温で、比較的優れた発
光を示すことが発表され注目されている。また、窒化ガ
リウム系化合物半導体を用いて、初めてｐｎ接合を実現
したＬＥＤが発表されている（応用物理，６０巻，２
号，ｐ１６３〜ｐ１６６，１９９１）。それによるとｐ
ｎ接合の窒化ガリウム系化合物半導体を有するＬＥＤの
発光波長は、主として４３０ｎｍ付近にあり、さらに３
７０ｎｍ付近の紫外域にも発光ピークを有している。そ
の波長は上記半導体材料の中で最も短い波長である。し
かし、そのＬＥＤは発光波長が示すように紫色に近い発
光色を有しているため視感度が悪いという欠点がある。By the way, at present, the LEDs which have been put into practical use are infrared, red, yellow, and green light-emitting LEDs, and blue or ultraviolet LEDs have not yet been put into practical use. Blue and UV light emitting devices are II-VI group ZnSe, I
Studies have been conducted using semiconductor materials such as V-IV group SiC and III-V group GaN. Recently, among them, the general formula is Ga X.
The gallium nitride-based compound semiconductor represented by Al 1-X N (where X is 0 ≦ X ≦ 1) has been noticed and has attracted attention because it exhibits relatively excellent light emission at room temperature. In addition, an LED that has realized a pn junction for the first time using a gallium nitride-based compound semiconductor has been announced (Applied Physics, Volume 60, 2).
No., p163-p166, 1991). It says p
The emission wavelength of an LED having an n-junction gallium nitride-based compound semiconductor is mainly around 430 nm.
It also has an emission peak in the ultraviolet region around 70 nm. The wavelength is the shortest wavelength among the above semiconductor materials. However, the LED has a drawback that it has a poor luminosity because it has an emission color close to purple as indicated by the emission wavelength.

【０００６】本発明はこのような事情を鑑みなされたも
ので、その目的とするところは、発光ピークが４３０ｎ
ｍ付近、および３７０ｎｍ付近にある窒化ガリウム系化
合物半導体材料よりなる発光素子を有するＬＥＤの視感
度を良くし、またその輝度を向上させることにある。The present invention has been made in view of such circumstances, and an object thereof is to obtain an emission peak of 430n.
It is to improve the visibility of an LED having a light-emitting element made of a gallium nitride-based compound semiconductor material in the vicinity of m and 370 nm and to improve the brightness thereof.

【０００７】[0007]

【課題を解決するための手段】本発明は、ステム上に発
光素子を有し、それを樹脂モールドで包囲してなる発光
ダイオードにおいて、前記発光素子が、一般式ＧａXＡ
ｌ1-XＮ（但し０≦X≦１である）で表される窒化ガリウ
ム系化合物半導体よりなり、さらに前記樹脂モールド中
に、前記窒化ガリウム系化合物半導体の発光により励起
されて蛍光を発する蛍光染料、または蛍光顔料が添加さ
れてなることを特徴とするＬＥＤである。The present invention provides a light-emitting diode having a light-emitting element on a stem, which is surrounded by a resin mold, wherein the light-emitting element has the general formula Ga X A
Fluorescence which is made of a gallium nitride-based compound semiconductor represented by l 1 -X N (where 0 ≦ X ≦ 1) and is excited by the light emission of the gallium nitride-based compound semiconductor to emit fluorescence in the resin mold. The LED is characterized in that a dye or a fluorescent pigment is added.

【０００８】図２は本発明のＬＥＤの構造を示す一実施
例である。１１はサファイア基板の上にＧａＡｌＮがｎ
型およびｐ型に積層されてなる青色発光素子、２および
３は図１と同じくメタルステム、メタルポスト、４は発
光素子を包囲する樹脂モールドである。発光素子１１の
裏面はサファイアの絶縁基板であり裏面から電極を取り
出せないため、ＧａＡｌＮ層のｎ電極をメタルステム２
と電気的に接続するため、ＧａＡｌＮ層をエッチングし
てｎ型層の表面を露出させてオーミック電極を付け、金
線によって電気的に接続する手法が取られている。また
他の電極は図１と同様にメタルポスト３から伸ばした金
線によりｐ型層の表面でワイヤボンドされている。さら
に樹脂モールド４には４２０〜４４０ｎｍ付近の波長に
よって励起されて４８０ｎｍに発光ピークを有する波長
を発光する蛍光染料５が添加されている。FIG. 2 is an embodiment showing the structure of the LED of the present invention. 11 is GaAlN n on the sapphire substrate
Type blue and blue p-type light emitting elements 2 and 3 are metal stems, metal posts 4 and resin molds surrounding the light emitting elements. Since the back surface of the light emitting element 11 is an insulating substrate of sapphire and electrodes cannot be taken out from the back surface, the n-electrode of the GaAlN layer is replaced with the metal stem 2.
In order to make electrical connection with the GaAlN layer, a method of etching the GaAlN layer to expose the surface of the n-type layer, attaching an ohmic electrode, and electrically connecting with a gold wire is used. The other electrodes are wire-bonded on the surface of the p-type layer by the gold wire extended from the metal post 3 as in FIG. Further, the resin mold 4 is added with a fluorescent dye 5 which is excited by a wavelength around 420 to 440 nm and emits a wavelength having an emission peak at 480 nm.

【０００９】[0009]

【発明の効果】蛍光染料、蛍光顔料は、一般に短波長の
光によって励起され、励起波長よりも長波長光を発光す
る。逆に長波長の光によって励起されて短波長の光を発
光する蛍光顔料もあるが、それはエネルギー効率が非常
に悪く微弱にしか発光しない。前記したように窒化ガリ
ウム系化合物半導体はＬＥＤに使用される半導体材料中
で最も短波長側にその発光ピークを有するものであり、
しかも紫外域にも発光ピークを有している。そのためそ
れを発光素子の材料として使用した場合、その発光素子
を包囲する樹脂モールドに蛍光染料、蛍光顔料を添加す
ることにより、最も好適にそれら蛍光物質を励起するこ
とができる。したがって青色ＬＥＤの色補正はいうにお
よばず、蛍光染料、蛍光顔料の種類によって数々の波長
の光を変換することができる。さらに、短波長の光を長
波長に変え、エネルギー効率がよい為、添加する蛍光染
料、蛍光顔料が微量で済み、輝度の低下の点からも非常
に好都合である。INDUSTRIAL APPLICABILITY Fluorescent dyes and fluorescent pigments are generally excited by light having a short wavelength and emit light having a wavelength longer than the excitation wavelength. On the contrary, there are fluorescent pigments that emit short-wavelength light when excited by long-wavelength light, but they have very poor energy efficiency and emit only weak light. As described above, the gallium nitride-based compound semiconductor has an emission peak on the shortest wavelength side in the semiconductor materials used for LEDs,
Moreover, it also has an emission peak in the ultraviolet region. Therefore, when it is used as a material of a light emitting element, the fluorescent substance can be excited most preferably by adding a fluorescent dye or a fluorescent pigment to a resin mold surrounding the light emitting element. Therefore, not only the color correction of the blue LED but also the light of various wavelengths can be converted depending on the type of the fluorescent dye or fluorescent pigment. Furthermore, since the light of short wavelength is changed to long wavelength and the energy efficiency is high, it is very convenient from the point of view that the amount of fluorescent dye or fluorescent pigment to be added is small and the brightness is lowered.

【図面の簡単な説明】[Brief description of drawings]

【図１】 従来の一ＬＥＤの構造を示す模式断面図。FIG. 1 is a schematic cross-sectional view showing the structure of a conventional LED.

【図２】 本発明のＬＥＤの一実施例の構造を示す模式
断面図。FIG. 2 is a schematic cross-sectional view showing the structure of an embodiment of the LED of the present invention.

【符号の説明】[Explanation of symbols]

１１・・・発光素子 ２・・・メタルステム ３・・・メタルポスト ４・・・樹脂モールド ５・・・蛍光染料。 11 ... Light emitting element 2 ... Metal stem 3 ... Metal post 4 ... Resin mold 5 ... Fluorescent dye

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 ステム上に発光素子を有し、それを樹脂
モールドで包囲してなる発光ダイオードにおいて、前記
発光素子が、一般式ＧａXＡｌ1-XＮ（但し０≦X≦１で
ある）で表される窒化ガリウム系化合物半導体よりな
り、さらに前記樹脂モールド中に、前記窒化ガリウム系
化合物半導体の発光により励起されて蛍光を発する蛍光
染料、または蛍光顔料が添加されてなることを特徴とす
る発光ダイオード。1. A light-emitting diode having a light-emitting element on a stem, which is surrounded by a resin mold, wherein the light-emitting element has the general formula Ga X Al 1 -X N (where 0 ≦ X ≦ 1). ) Represented by a gallium nitride-based compound semiconductor, further, in the resin mold, a fluorescent dye or fluorescent pigment that is excited by the emission of the gallium nitride-based compound semiconductor to emit fluorescence, or a fluorescent pigment is added. Light emitting diode.
JP33601191A 1991-11-25 1991-11-25 Light emitting diode Pending JPH05152609A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33601191A JPH05152609A (en) 1991-11-25 1991-11-25 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33601191A JPH05152609A (en) 1991-11-25 1991-11-25 Light emitting diode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP30639397A Division JP2900928B2 (en) 1997-10-20 1997-10-20 Light emitting diode

Publications (1)

Publication Number Publication Date
JPH05152609A true JPH05152609A (en) 1993-06-18

Family

ID=18294774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33601191A Pending JPH05152609A (en) 1991-11-25 1991-11-25 Light emitting diode

Country Status (1)

Country Link
JP (1) JPH05152609A (en)

Cited By (140)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960025292A (en) * 1994-12-26 1996-07-20 윤종용 Gallium nitrogen light emitting device having a light emitting source of phosphor
WO1997050132A1 (en) * 1996-06-26 1997-12-31 Siemens Aktiengesellschaft Light-emitting semiconductor component with luminescence conversion element
WO1998005078A1 (en) * 1996-07-29 1998-02-05 Nichia Chemical Industries, Ltd. Light emitting device and display device
JPH10190066A (en) * 1996-12-27 1998-07-21 Nichia Chem Ind Ltd Light emitting diode and LED display device using the same
WO1998039805A1 (en) * 1997-03-03 1998-09-11 Koninklijke Philips Electronics N.V. White light-emitting diode
WO1998039806A1 (en) * 1997-03-03 1998-09-11 Koninklijke Philips Electronics N.V. Diode-addressed colour display with molecular phosphor
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