JPH05136100A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPH05136100A JPH05136100A JP29615091A JP29615091A JPH05136100A JP H05136100 A JPH05136100 A JP H05136100A JP 29615091 A JP29615091 A JP 29615091A JP 29615091 A JP29615091 A JP 29615091A JP H05136100 A JPH05136100 A JP H05136100A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- hbr
- film
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】
【目的】 Al合金のエッチングに関し, エッチングマス
ク材料および下地との選択比を増加させてエッチングマ
ージンを大きくするを目的とする。
【構成】 １）アルミニウムを含む金膜のドライエッチ
ングに際し, エッチングガスとして臭素系ガスを使用す
る，２）前記エッチングガスが HBr, Br2, BBr3 および
これらのガスに O2, N2,塩素系ガスを添加したものであ
るように構成する。
(57) [Abstract] [Purpose] With regard to Al alloy etching, the purpose is to increase the etching margin by increasing the selection ratio between the etching mask material and the base. [Structure] 1) When dry etching a gold film containing aluminum, a bromine-based gas is used as an etching gas. 2) The etching gas is HBr, Br 2 , BBr 3 and O 2 , N 2 , chlorine in these gases. It is configured such that a system gas is added.
Description
【０００１】[0001]
【産業上の利用分野】本発明はエッチング方法に係り,
特に配線材料のアルミニウム(Al)合金のエッチング方法
に関する。The present invention relates to an etching method,
In particular, it relates to a method for etching an aluminum (Al) alloy as a wiring material.
【０００２】現在, LSI の配線材料はAl合金が主流であ
る。パターンの微細化が進み, Al合金膜のパターニング
の際のエッチングに対する要求が厳しくなっている。At present, Al alloys are mainly used as wiring materials for LSIs. As the patterns are becoming finer, the requirements for etching during patterning of Al alloy films are becoming stricter.
【０００３】[0003]
【従来の技術】従来のAl合金膜のドライエッチングは塩
素系のガスを用いていたため，レジストや二酸化シリコ
ン(SiO2)やりん珪酸ガラス(PSG) 等に対する選択比が十
分ではなく, エッチングマスクとなるレジスト膜の損傷
による配線パターンのくびれや, オーバエッチングによ
る下地のSiO2膜やPSG 膜の損傷が顕著であった。 2. Description of the Related Art Conventional dry etching of an Al alloy film uses a chlorine-based gas, so the selectivity to resist, silicon dioxide (SiO 2 ) and phosphosilicate glass (PSG) is not sufficient, and it is used as an etching mask. The constriction of the wiring pattern due to damage to the resist film and the damage to the underlying SiO 2 film and PSG film due to overetching were remarkable.
【０００４】[0004]
【発明が解決しようとする課題】従来例では配線膜の微
細パターン形成に際し, 単層レジストでは選択比が十分
とれないためエッチングができなくなり，３層レジスト
を使用しなければならず，従って工程数が増加してい
た。In the conventional example, when forming a fine pattern of a wiring film, etching cannot be performed because a single layer resist cannot provide a sufficient selection ratio, and a three layer resist must be used. Was increasing.
【０００５】また，下地の損傷も顕著であり，その結果
下地膜の膜厚を増加させ，基板上に不必要な段差を形成
し，デバイスの高集積化，微細化の障害となっていた。
本発明はAl合金のエッチングに際し, エッチングマスク
材料および下地との選択比を増加させてエッチングマー
ジンを大きくすることを目的とする。Further, the damage of the base is remarkable, and as a result, the film thickness of the base film is increased and an unnecessary step is formed on the substrate, which has been an obstacle to high integration and miniaturization of the device.
An object of the present invention is to increase the etching margin by increasing the selection ratio between the etching mask material and the underlayer when etching an Al alloy.
【０００６】[0006]
【課題を解決するための手段】上記課題の解決は，１）
アルミニウムを含む金膜のドライエッチングに際し, エ
ッチングガスとして臭素系ガスを使用するエッチング方
法，あるいは２）前記エッチングガスが HBr, Br2, BBr
3 およびこれらのガスに O2, N2,塩素系ガスを添加した
ものである前記１）記載のエッチング方法により達成さ
れる。[Means for Solving the Problems] 1)
In dry etching of a gold film containing aluminum, an etching method using a bromine-based gas as an etching gas, or 2) said etching gas is HBr, Br 2 , BBr
3 and the etching method described in 1) above, wherein O 2 , N 2 , and a chlorine-based gas are added to these gases.
【０００７】[0007]
【作用】本発明では，エッチングガスとして臭素系ガス
を使用する。例えば HBr, Br2,BBr3, HBr＋O2, HBr＋N
2, HBr＋塩素系ガス等を用いる。In the present invention, a brominated gas is used as the etching gas. For example, HBr, Br 2 ,, Brr 3 , HBr ＋ O 2 , HBr ＋ N
2 , HBr + chlorine gas, etc. are used.
【０００８】本発明者は，これらガスを用いると，Al合
金膜のエッチングレートおよびレジストやSiO2等に対す
る選択比が大幅に向上し，エッチングマージンが増加す
ることを確認して，この結果を利用して本発明を行っ
た。The inventors of the present invention confirmed that the use of these gases significantly improved the etching rate of the Al alloy film and the selection ratio with respect to the resist, SiO 2, etc., and increased the etching margin, and utilized the results. The present invention was carried out.
【０００９】また, Al/Cu 配線のエッチングにおいて，
３層レジストを使う必要がなくなり工程短縮が可能とな
る。また，エッチング装置は平行平板型反応性イオンエ
ッチング(RIE) 装置, 電子サイクロトロン共鳴(ECR) 型
等異方性ドライエッチャであれば何でもよい。In addition, in etching Al / Cu wiring,
Since it is not necessary to use a three-layer resist, the process can be shortened. The etching device may be a parallel plate type reactive ion etching (RIE) device, an electron cyclotron resonance (ECR) type anisotropic dry etcher, or the like.
【００１０】[0010]
【実施例】図１は実施例に使用した装置の断面図であ
る。図は通常の平行平板型RIE 装置で, １はエッチング
室，２はエッチングガス導入口，３は排気口，４は基板
側電極，５は対向電極，６は絶縁物，７は静電チャッ
ク，８は冷却水出入口，９はRF電源, 10はウエハであ
る。EXAMPLE FIG. 1 is a sectional view of an apparatus used in the example. The figure shows a normal parallel plate type RIE device, 1 is an etching chamber, 2 is an etching gas inlet, 3 is an exhaust port, 4 is a substrate side electrode, 5 is a counter electrode, 6 is an insulator, 7 is an electrostatic chuck, Reference numeral 8 is a cooling water inlet / outlet, 9 is an RF power source, and 10 is a wafer.
【００１１】この装置を用いて，以下の条件でAl/Cu(２
％) 膜のエッチングを行った。エッチング条件は以下の
ようである。 エッチングガス： HBr 50 SCCM ガス圧力 ： 0.03 Torr RF電力 ： 400 W この結果, エッチングレートは3000Å／分，選択比は対
レジストで4.5,対SiO2で10が得られた。Using this device, Al / Cu (2
%) The film was etched. The etching conditions are as follows. Etching gas: HBr 50 SCCM Gas pressure: 0.03 Torr RF power: 400 W As a result, the etching rate was 3000Å / min, the selectivity was 4.5 for resist and 10 for SiO 2 .
【００１２】従来の塩素系ガスを用いたエッチングで
は, エッチングレートは2000Å／分，選択比は対レジス
トで１, 対SiO2で４であり，実施例ではこれらの値が大
幅に向上している。In the conventional etching using the chlorine-based gas, the etching rate is 2000 Å / min, the selection ratio is 1 for resist and 4 for SiO 2 , and these values are greatly improved in the examples. .
【００１３】[0013]
【発明の効果】本発明によれぱ，Al合金のエッチングに
際し, エッチングマスク材料および下地との選択比を増
加させてエッチングマージンを大きくすることができ
た。この結果，デバイスの信頼性および製造歩留の向上
に寄与することができた。According to the present invention, it is possible to increase the etching margin by increasing the selection ratio between the etching mask material and the base when etching the Al alloy. As a result, we were able to contribute to the improvement of device reliability and manufacturing yield.
【図１】 実施例に使用した装置の断面図FIG. 1 is a sectional view of an apparatus used in Examples.
１ エッチング室 ２ エッチングガス導入口 ３ 排気口 ４ 基板側電極 ５ 対向電極 ６ 絶縁物 ７ 静電チャック ８ 冷却水出入口 ９ RF電源 10 ウエハ 1 Etching chamber 2 Etching gas inlet 3 Exhaust port 4 Substrate side electrode 5 Counter electrode 6 Insulator 7 Electrostatic chuck 8 Cooling water inlet / outlet 9 RF power supply 10 Wafer
Claims (2)
ングに際し, エッチングガスとして臭素系ガスを使用す
ることを特徴とするエッチング方法。1. An etching method characterized in that a bromine-based gas is used as an etching gas in dry etching a gold film containing aluminum.
およびこれらのガスに O2, N2,塩素系ガスを添加したも
のであることを特徴とする請求項１記載のエッチング方
法。2. The etching gas is HBr, Br 2 , BBr 3
2. The etching method according to claim 1, wherein O 2 , N 2 , and a chlorine-based gas are added to these gases.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29615091A JPH05136100A (en) | 1991-11-13 | 1991-11-13 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29615091A JPH05136100A (en) | 1991-11-13 | 1991-11-13 | Etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05136100A true JPH05136100A (en) | 1993-06-01 |
Family
ID=17829805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29615091A Withdrawn JPH05136100A (en) | 1991-11-13 | 1991-11-13 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05136100A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996019800A1 (en) * | 1994-12-20 | 1996-06-27 | Citizen Watch Co., Ltd. | Method of processing magnetic head slider |
| US6069090A (en) * | 1994-01-11 | 2000-05-30 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for semiconductor device fabrication |
-
1991
- 1991-11-13 JP JP29615091A patent/JPH05136100A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6069090A (en) * | 1994-01-11 | 2000-05-30 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for semiconductor device fabrication |
| US6372082B1 (en) | 1994-01-11 | 2002-04-16 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for semiconductor device fabrication |
| WO1996019800A1 (en) * | 1994-12-20 | 1996-06-27 | Citizen Watch Co., Ltd. | Method of processing magnetic head slider |
| US5997700A (en) * | 1994-12-20 | 1999-12-07 | Citizen Watch Co., Ltd. | Method of fabricating magnetic head slider |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990204 |