JPH05106056A - Partial plating method - Google Patents
Partial plating methodInfo
- Publication number
- JPH05106056A JPH05106056A JP26247591A JP26247591A JPH05106056A JP H05106056 A JPH05106056 A JP H05106056A JP 26247591 A JP26247591 A JP 26247591A JP 26247591 A JP26247591 A JP 26247591A JP H05106056 A JPH05106056 A JP H05106056A
- Authority
- JP
- Japan
- Prior art keywords
- resist ink
- poly
- water
- plating
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims description 21
- 238000005530 etching Methods 0.000 claims abstract description 13
- 238000007772 electroless plating Methods 0.000 claims abstract description 11
- 229920000642 polymer Polymers 0.000 claims abstract description 7
- YPHQUSNPXDGUHL-UHFFFAOYSA-N n-methylprop-2-enamide Chemical compound CNC(=O)C=C YPHQUSNPXDGUHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- UUORTJUPDJJXST-UHFFFAOYSA-N n-(2-hydroxyethyl)prop-2-enamide Chemical compound OCCNC(=O)C=C UUORTJUPDJJXST-UHFFFAOYSA-N 0.000 claims abstract description 5
- QNILTEGFHQSKFF-UHFFFAOYSA-N n-propan-2-ylprop-2-enamide Chemical compound CC(C)NC(=O)C=C QNILTEGFHQSKFF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000004913 activation Effects 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 8
- 230000000873 masking effect Effects 0.000 abstract description 6
- XFHJDMUEHUHAJW-UHFFFAOYSA-N n-tert-butylprop-2-enamide Chemical compound CC(C)(C)NC(=O)C=C XFHJDMUEHUHAJW-UHFFFAOYSA-N 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 2
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 abstract description 2
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 31
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 24
- 238000005406 washing Methods 0.000 description 21
- 239000000126 substance Substances 0.000 description 20
- 239000003054 catalyst Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 239000000243 solution Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000007704 transition Effects 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
- 229920001577 copolymer Polymers 0.000 description 8
- 238000005238 degreasing Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 5
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- PYRZPBDTPRQYKG-UHFFFAOYSA-N cyclopentene-1-carboxylic acid Chemical compound OC(=O)C1=CCCC1 PYRZPBDTPRQYKG-UHFFFAOYSA-N 0.000 description 4
- -1 for example Polymers 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- 235000002639 sodium chloride Nutrition 0.000 description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 239000011775 sodium fluoride Substances 0.000 description 2
- 235000013024 sodium fluoride Nutrition 0.000 description 2
- 235000011121 sodium hydroxide Nutrition 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- GHPYJLCQYMAXGG-WCCKRBBISA-N (2R)-2-amino-3-(2-boronoethylsulfanyl)propanoic acid hydrochloride Chemical compound Cl.N[C@@H](CSCCB(O)O)C(O)=O GHPYJLCQYMAXGG-WCCKRBBISA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002140 halogenating effect Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Chemically Coating (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、プラスチック、プリン
ト配線板等に行なうための部分めっき方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a partial plating method for performing on plastics, printed wiring boards and the like.
【0002】[0002]
【従来技術とその課題】一般に部分めっき法は、プリン
ト配線板の回路パターンの作成等に幅広く応用されてお
り、具体的には絶縁テープ、フォトレジスト、レジスト
インキ等でマスキングする方法、めっき形成可能な樹脂
と形成不可能な樹脂を形成して行なう二色成形法、触媒
含有樹脂と含有しない樹脂を形成して行なう二色成形
法、導電性塗料或いは有機塗料を塗布してその上にめっ
きする方法等が知られている。特に上記レジストインキ
による部分めっき法は、極め細かなマスキングが可能で
あり、しかも操作性等の点で優れているため、プラスチ
ックめっき、プリント配線板の作成等の各種製造分野に
幅広く利用されている。2. Description of the Related Art The partial plating method is generally widely applied to the production of circuit patterns on printed wiring boards. Specifically, the method of masking with insulating tape, photoresist, resist ink, etc., plating can be performed. Resin and non-formable resin forming two-color molding method, catalyst-containing resin and resin-free resin forming two-color molding method, conductive paint or organic paint applied and plated on it Methods etc. are known. In particular, the partial plating method using the above resist ink is capable of extremely fine masking and is excellent in operability and the like, and is therefore widely used in various manufacturing fields such as plastic plating and the production of printed wiring boards. ..
【0003】しかしながら、アルカリ可溶型レジストイ
ンキ或いは溶剤可溶型レジストインキのような従来のレ
ジストインキによる部分めっき法では、めっき処理終了
後にこれらのレジストインキ層を除去するにはアルカリ
水溶液や有機溶剤を用いなければならない。このため、
上記レジストインキによる方法では、被めっき素材に対
する影響を考慮する必要が生じ、しかも生体に有害な有
機溶剤等による作業環境上の問題や排水処理の問題があ
る。However, in the partial plating method using a conventional resist ink such as an alkali-soluble resist ink or a solvent-soluble resist ink, an alkaline aqueous solution or an organic solvent is used to remove these resist ink layers after the plating process is completed. Must be used. For this reason,
In the method using the resist ink, it is necessary to consider the influence on the material to be plated, and there is a problem in the working environment due to an organic solvent that is harmful to the living body and a problem in wastewater treatment.
【0004】以上の見地より現在では、従来のレジスト
インキのもつマスキング性能、即ち素材に対する密着
性、処理液に対する化学的抵抗性、レジスト剥離性等を
損なうことなく、上記のような問題が生じないレジスト
インキによる部分めっき方法の開発が切望されている。From the above viewpoint, at present, the above-mentioned problems do not occur without impairing the masking performance of the conventional resist ink, that is, the adhesiveness to the material, the chemical resistance to the processing liquid, the resist peeling property and the like. Development of a partial plating method using resist ink has been earnestly desired.
【0005】[0005]
【課題を解決するための手段】本発明は、従来のレジス
トインキのもつマスキング性能を損なうことなく、素材
に無害であり且つ環境安全性に優れた部分めっき方法を
提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a partial plating method which is harmless to the material and is excellent in environmental safety without impairing the masking performance of the conventional resist ink.
【0006】即ち、本発明は、無電解めっき工程におい
て、めっきを必要としない部分にポリ−N−メチルアク
リルアミド、ポリ−N−イソプロピルアクリルアミド、
ポリ−N−t-ブチルアクリルアミド、ポリ−N−ヒドロ
キシエチルアクリルアミド及びポリ−N−N−ジメチル
アクリルアミドよりなる感温性ポリマーの中から選ばれ
た少なくとも1種を主成分とするレジストインキの層を
予め形成させ、エッチング処理後に該レジストインキ層
を除去し、次いで無電解めっき処理を行なうことを特徴
とする部分めっき方法に係るものである。That is, in the present invention, poly-N-methyl acrylamide, poly-N-isopropyl acrylamide, and
A layer of a resist ink containing, as a main component, at least one selected from temperature-sensitive polymers consisting of poly-N-t-butylacrylamide, poly-N-hydroxyethylacrylamide and poly-N-N-dimethylacrylamide. The present invention relates to a partial plating method characterized in that the resist ink layer is formed in advance, the resist ink layer is removed after the etching treatment, and then the electroless plating treatment is performed.
【0007】本発明者らは、新規な部分めっき方法を開
発すべく鋭意研究を重ねた結果、レジストインキとして
特定の感温性ポリマーを用いる場合には上記問題が解決
できることを見出し、本発明を完成するに至った。As a result of intensive studies to develop a novel partial plating method, the present inventors have found that the above problems can be solved when a specific temperature-sensitive polymer is used as a resist ink, and the present invention is realized. It came to completion.
【0008】以下、本発明を詳細に説明する。The present invention will be described in detail below.
【0009】本発明における感温性ポリマーは、通常は
水溶性であるがある温度以上では水に溶けなくなるとい
う特異な性質を有するものであり、このようなポリマー
としてはポリ−N−メチルアクリルアミド、ポリ−N−
イソプロピルアクリルアミド、ポリ−N−t-ブチルアク
リルアミド、ポリ−N−N−ジメチルアクリルアミド、
ポリ−N−ヒドロキシエチルアクリルアミド等が挙げら
れ、これらの少なくとも1種を主成分とする共重合体を
レジストインキとして用いる。上記共重合体は、共重合
するモノマーの種類、配合比率等を変更することにより
水溶/水不溶の転移温度を任意に設定することができ
る。The temperature-sensitive polymer in the present invention is usually water-soluble and has a unique property that it is insoluble in water at a certain temperature or higher. As such a polymer, poly-N-methylacrylamide, Poly-N-
Isopropyl acrylamide, poly-N-t-butyl acrylamide, poly-N-N-dimethyl acrylamide,
Examples thereof include poly-N-hydroxyethyl acrylamide, and a copolymer containing at least one of these as a main component is used as a resist ink. The water-soluble / water-insoluble transition temperature of the above-mentioned copolymer can be arbitrarily set by changing the type of the monomer to be copolymerized, the mixing ratio, and the like.
【0010】上記成分を有するレジストインキを素材に
塗布し、通常20〜60℃程度で1〜3時間乾燥させ、
その後室温で1〜6時間程度放置する。次いで、常法に
従い脱脂を行ない、湯洗するが、これらの操作は使用す
るレジストインキの転移温度以上で行なう必要がある。
尚、本発明で適用できる素材としては、公知の樹脂のい
ずれにも適用でき、例えばABS樹脂、ポリアセタール
樹脂、ポリアミド樹脂、ポリカーボネート樹脂、ポリブ
チレンテレフテレート樹脂、ポリエチレンテレフテレー
ト樹脂、ポリフェニレンオキシド樹脂、ポリスルフォン
樹脂、ポリエーテルスルフォン樹脂、ポリアリレート樹
脂、ポリイミド樹脂、ポリアミドイミド樹脂、ポリフェ
ニレンスルフィド樹脂、ポリプロピレン樹脂等の各種樹
脂が挙げられる。また、金属では、例えば銅、ニッケ
ル、ステンレススチール、真鍮等の金属或いは合金に適
用可能である。A resist ink having the above components is applied to a material and dried at about 20 to 60 ° C. for 1 to 3 hours,
Then, it is left at room temperature for about 1 to 6 hours. Next, degreasing and washing with hot water are carried out in accordance with a conventional method, but these operations must be carried out at the transition temperature of the resist ink used or higher.
The material applicable in the present invention may be any known resin, for example, ABS resin, polyacetal resin, polyamide resin, polycarbonate resin, polybutylene terephthalate resin, polyethylene terephthalate resin, polyphenylene oxide resin. , Various resins such as polysulfone resin, polyether sulfone resin, polyarylate resin, polyimide resin, polyamideimide resin, polyphenylene sulfide resin, and polypropylene resin. Further, as the metal, for example, a metal or alloy such as copper, nickel, stainless steel, or brass can be applied.
【0011】続いて、常法に従ってエッチング処理、中
和処理、触媒付与及び活性化処理を順次行なう。ここで
レジストインキ層の除去は、エッチング処理後であれば
各工程のいずれの後に行なっても良い。但し、前記した
ようにレジストインキ層を素材から除去するまでは転移
温度以上の温度で各処理を行なう。またレジストインキ
層を除去する方法としては上記転移温度未満の水温に設
定された水洗槽等において容易に除去することができ
る。Then, an etching treatment, a neutralization treatment, a catalyst application and an activation treatment are sequentially carried out in accordance with a conventional method. Here, the resist ink layer may be removed after any of the steps as long as it is after the etching treatment. However, as described above, each treatment is performed at a temperature equal to or higher than the transition temperature until the resist ink layer is removed from the material. As a method of removing the resist ink layer, the resist ink layer can be easily removed in a water washing tank or the like set to a water temperature below the transition temperature.
【0012】また、レジストインキ層の除去を触媒付与
後に行なう場合には、無電解めっきを行なう前にレジス
トインキ層を素材から完全に除去する必要がある。この
ときに少しでも素材表面にパラジウムが残っているとそ
の部分に無電解めっき被膜が形成されてしまうので除去
処理には注意を払う必要がある。ここで通常は触媒付与
した後に硫酸、塩酸、アンモニア、苛性ソーダ等の活性
化溶液を用いて活性化処理を行なうことにより無電解め
っき処理に必要な活性化パラジウムが得られるが、上記
活性化溶液にハロゲン化化合物を添加する場合には、活
性化溶液の触媒の溶解除去効果を高め、不要な残留パラ
ジウムを完全に除去し、より優れた部分めっきを行なう
のが可能となる。この場合に使用できるハロゲン化化合
物としては、塩化ナトリウム、塩化カリ、フッ化ナトリ
ウム、フッ化カリ、フッ化アンモン、臭化カリ、ヨウ化
カリ等が挙げられる。上記ハロゲン化化合物の添加量
は、触媒付与工程の条件等により一律に特定することは
できないが、通常はこれらハロゲン化化合物の1種又は
2種以上を上記活性化溶液に0.1〜10g/l程度添
加する。When the resist ink layer is removed after the catalyst is applied, it is necessary to completely remove the resist ink layer from the material before performing electroless plating. At this time, if palladium remains on the surface of the material even a little, an electroless plating film will be formed on that part, so it is necessary to pay attention to the removal treatment. Usually, after activation of a catalyst, sulfuric acid, hydrochloric acid, ammonia, activation treatment using an activation solution such as caustic soda provides activated palladium necessary for electroless plating. When a halogenated compound is added, the effect of dissolving and removing the catalyst in the activation solution is enhanced, unnecessary residual palladium is completely removed, and more excellent partial plating can be performed. Examples of the halogenated compound that can be used in this case include sodium chloride, potassium chloride, sodium fluoride, potassium fluoride, ammonium fluoride, potassium bromide, potassium iodide and the like. The amount of the halogenated compound added cannot be uniformly specified depending on the conditions of the catalyst application step and the like, but usually, one or more of these halogenated compounds are added to the activation solution in an amount of 0.1 to 10 g / Add about l.
【0013】以上のレジストインキ層の除去及び通常の
無電解めっきの前処理を終えた素材に対して常法の無電
解めっきを施すと、レジストインキ層が塗布された部分
にはめっき被膜が形成されない状態、いわゆる部分めっ
きが形成された製品が得られる。尚、この場合の無電解
めっき被膜材は、通常の無電解めっきで用いられている
ものであれば限定されないが、特に無電解銅めっき、無
電解ニッケルめっき等が好ましい。When the material which has been subjected to the above-mentioned removal of the resist ink layer and the pretreatment of the usual electroless plating is subjected to the usual electroless plating, a plating film is formed on the portion where the resist ink layer is applied. A product in which the so-called partial plating is formed is obtained. The electroless plating coating material in this case is not limited as long as it is used in ordinary electroless plating, but electroless copper plating, electroless nickel plating, etc. are particularly preferable.
【0014】[0014]
【発明の効果】本発明の部分めっき方法によれば、以下
のような優れた効果が得られる。According to the partial plating method of the present invention, the following excellent effects can be obtained.
【0015】(1)めっきの必要なところにのみエッチ
ングし、その上からめっき処理を行なうので素材とめっ
き被膜との間に高い密着強度が得られる。(1) Since etching is performed only where plating is required, and plating is performed from above, high adhesion strength can be obtained between the material and the plating film.
【0016】(2)めっきを必要としない部分のレジス
トインキ層は容易に除去できるので、素材そのものの表
面を充分に生かすことができる。(2) Since the resist ink layer in the portion not requiring plating can be easily removed, the surface of the material itself can be fully utilized.
【0017】(3)マスキングすることにより、塗料を
樹脂表面に直接塗装することができ、この場合にはめっ
き被膜上への塗装に比べて強い密着強度が得られる。(3) By masking, the coating material can be directly coated on the resin surface, and in this case, a stronger adhesion strength can be obtained as compared with coating on the plating film.
【0018】(4)レジストインキとして感温性ポリマ
ーを使用するので水によって簡単にレジストインキ層の
除去が行なえ、しかも溶剤等のように環境汚染発生の心
配もなく、安全性に優れた効果を発揮する。(4) Since the temperature-sensitive polymer is used as the resist ink, the resist ink layer can be easily removed with water, and there is no fear of environmental pollution such as a solvent, resulting in excellent safety. Demonstrate.
【0019】[0019]
【実施例】以下に実施例を示し、本発明の特徴とすると
ころを明瞭にする。尚、本発明は実施例に限定されるも
のではない。EXAMPLES Examples will be shown below to clarify the features of the present invention. The present invention is not limited to the examples.
【0020】実施例1 レジストインキとして水溶/水不溶の転移温度を40℃
に調整したポリ−N−メチルアクリルアミドを主成分と
する共重合体を用い、これにABS樹脂板(10cm×10cm
×0.3cm )の片面に塗布した。その後、1時間乾燥し、
室温に放置後、これを試片として使用した。Example 1 A resist ink having a water-soluble / water-insoluble transition temperature of 40 ° C.
Using a copolymer containing poly-N-methylacrylamide as the main component, the ABS resin plate (10 cm x 10 cm
X 0.3 cm) was applied to one side. Then dry for 1 hour,
After being left at room temperature, this was used as a test piece.
【0021】次に、「エースクリーンA−220」(奥
野製薬工業(株)製)50g/l溶液を用い、60℃で
5分間浸漬し、脱脂を行なった。続いて60℃で湯洗
後、CrO3 400g/lとH2 SO4 200ml/l
からなる処理液にて65℃で8分エッチング処理を行な
い、その処理後25℃でレジストインキ層の除去を水洗
により行なった。Then, a 50 g / l solution of "A-screen A-220" (manufactured by Okuno Chemical Industries Co., Ltd.) was used for immersion for 5 minutes at 60 ° C. for degreasing. Subsequently, after washing with hot water at 60 ° C., CrO 3 400 g / l and H 2 SO 4 200 ml / l
Etching treatment was performed at 65 ° C. for 8 minutes with the treatment liquid consisting of, and after the treatment, the resist ink layer was removed by washing with water at 25 ° C.
【0022】次いで、50ml/l塩酸により25℃で
2分中和し、水洗した後、「キャタリストC」(奥野製
薬工業(株)製)40ml/l及び塩酸50ml/lか
らなる処理剤によって25℃で触媒付与を4分間行なっ
た。Then, the mixture was neutralized with 50 ml / l hydrochloric acid at 25 ° C. for 2 minutes, washed with water, and then treated with "Catalyst C" (manufactured by Okuno Chemical Industries Co., Ltd.) 40 ml / l and hydrochloric acid 50 ml / l. The catalyst was applied at 25 ° C. for 4 minutes.
【0023】25℃で水洗後、硫酸100ml/l及び
塩化ナトリウム1g/l溶液により50℃で5分間活性
化処理を行なった。After washing with water at 25 ° C., activation treatment was carried out with a solution of 100 ml / l of sulfuric acid and 1 g / l of sodium chloride at 50 ° C. for 5 minutes.
【0024】さらに25℃で水洗後、最後に「TMP化
学銅ニュー100」(奥野製薬工業(株)製)を用い、
25℃で12分にわたり無電解銅めっきを行なった。こ
の結果、レジストインキ塗布部分にはめっき被膜が析出
しない部分めっきを得ることができた。After further washing with water at 25 ° C., finally using “TMP Chemical Copper New 100” (manufactured by Okuno Chemical Industry Co., Ltd.),
Electroless copper plating was performed at 25 ° C for 12 minutes. As a result, it was possible to obtain a partial plating in which the plating film was not deposited on the resist ink applied portion.
【0025】実施例2 レジストインキとして水溶/水不溶の転移温度を25℃
に調整したポリ−N−イソプロピルアクリルアミドを主
成分とする共重合体を用い、これにABS樹脂板(10cm
×10cm×0.3cm )の片面に塗布した。その後、1時間乾
燥し、室温に放置後、これを試片として使用した。Example 2 A resist ink having a water-soluble / water-insoluble transition temperature of 25 ° C.
The copolymer containing poly-N-isopropylacrylamide as the main component adjusted to
(× 10 cm × 0.3 cm) was applied on one side. Then, it was dried for 1 hour, left at room temperature, and used as a test piece.
【0026】次に、「エースクリーンA−220」(奥
野製薬工業(株)製)50g/l溶液を用い、60℃で
5分間浸漬し、脱脂を行なった。続いて60℃で湯洗
後、CrO3 400g/lとH2 SO4 200ml/l
からなる処理液にて65℃で8分エッチング処理を行な
った後、30℃で水洗した。Then, a 50 g / l solution of "A-screen A-220" (manufactured by Okuno Chemical Industries Co., Ltd.) was used to immerse the solution for 5 minutes at 60 ° C for degreasing. Subsequently, after washing with hot water at 60 ° C., CrO 3 400 g / l and H 2 SO 4 200 ml / l
Etching treatment was performed at 65 ° C. for 8 minutes with a treatment liquid consisting of, and then washed at 30 ° C. with water.
【0027】次いで、50ml/l塩酸により25℃で
2分中和した後、20℃でレジストインキ層の除去を水
洗により行なった。Then, after neutralizing with 50 ml / l hydrochloric acid for 2 minutes at 25 ° C., the resist ink layer was removed at 20 ° C. by washing with water.
【0028】除去後、「キャタリストC」(奥野製薬工
業(株)製)40ml/l及び塩酸50ml/lからな
る処理剤によって25℃で触媒付与を4分間行なった。After the removal, a catalyst was applied for 4 minutes at 25 ° C. with a treating agent consisting of 40 ml / l of "Catalyst C" (manufactured by Okuno Chemical Industries Co., Ltd.) and 50 ml / l of hydrochloric acid.
【0029】25℃で水洗後、塩酸50ml/l及び塩
化カリウム1g/l溶液により35℃で5分間活性化処
理を行なった。After washing with water at 25 ° C., activation treatment was carried out with a solution of 50 ml / l of hydrochloric acid and 1 g / l of potassium chloride at 35 ° C. for 5 minutes.
【0030】25℃で水洗後、「TMP化学銅ニュー1
00」(奥野製薬工業(株)製)を用い、25℃で12
分にわたり無電解銅めっきを行なった。この結果、レジ
ストインキ塗布部分にはめっき被膜が析出しない部分め
っきを得ることができた。After washing with water at 25 ° C., “TMP Chemical Copper New 1
00 "(manufactured by Okuno Chemical Industries Co., Ltd.)
Electroless copper plating was performed for a minute. As a result, it was possible to obtain a partial plating in which the plating film was not deposited on the resist ink applied portion.
【0031】実施例3 レジストインキとして水溶/水不溶の転移温度を25℃
に調整したポリ−N−t-ブチルアクリルアミドを主成分
とする共重合体を用い、これにABS樹脂板(10cm×10
cm×0.3cm )の片面に塗布した。その後、1時間乾燥
し、室温に放置後、これを試片として使用した。Example 3 A resist ink having a water-soluble / water-insoluble transition temperature of 25 ° C.
The copolymer containing poly-N-t-butylacrylamide as the main component, which was prepared as described above, was used, and an ABS resin plate (10 cm × 10
cm x 0.3 cm) was applied to one side. Then, it was dried for 1 hour, left at room temperature, and used as a test piece.
【0032】次に、「エースクリーンA−220」(奥
野製薬工業(株)製)50g/l溶液を用い、60℃で
5分間浸漬し、脱脂を行なった。続いて30℃で水洗
後、CrO3 400g/lとH2 SO4 200ml/l
からなる処理液にて65℃で8分エッチング処理を行な
った後、30℃で水洗した。Next, a 50 g / l solution of "A-screen A-220" (manufactured by Okuno Chemical Industries Co., Ltd.) was used for immersion for 5 minutes at 60 ° C. for degreasing. Then, after washing with water at 30 ° C., CrO 3 400 g / l and H 2 SO 4 200 ml / l
Etching treatment was performed at 65 ° C. for 8 minutes with a treatment liquid consisting of, and then washed at 30 ° C. with water.
【0033】次いで、50ml/l塩酸により25℃で
2分中和し、25℃で水洗した後に「キャタリストC」
(奥野製薬工業(株)製)40ml/l及び塩酸50m
l/lからなる処理剤によって25℃で触媒付与を4分
間行なった。その後20℃でレジストインキ層の除去を
水洗により行なった。Then, it was neutralized with 50 ml / l hydrochloric acid at 25 ° C. for 2 minutes, washed with water at 25 ° C., and then "catalyst C".
(Okuno Pharmaceutical Co., Ltd.) 40 ml / l and hydrochloric acid 50 m
The catalyst application was carried out for 4 minutes at 25 ° C. with the treating agent consisting of 1 / l. Then, the resist ink layer was removed by washing with water at 20 ° C.
【0034】続いて、水酸化ナトリウム50g/l及び
フッ化ナトリウム1g/l溶液により40℃で5分間活
性化処理を行なった。Subsequently, activation treatment was carried out with a solution of 50 g / l of sodium hydroxide and 1 g / l of sodium fluoride at 40 ° C. for 5 minutes.
【0035】25℃で水洗後、「TMP化学ニッケル」
(奥野製薬工業(株)製)を用い、40℃で8分にわた
り無電解ニッケルめっきを行なった。この結果、レジス
トインキ塗布部分にはめっき被膜が析出しない部分めっ
きを得ることができた。After washing with water at 25 ° C., "TMP chemical nickel"
(Okuno Pharmaceutical Co., Ltd.) was used for electroless nickel plating at 40 ° C. for 8 minutes. As a result, it was possible to obtain a partial plating in which the plating film was not deposited on the resist ink applied portion.
【0036】実施例4 レジストインキとして水溶/水不溶の転移温度を20℃
に調整したポリ−N−N−ジメチルアクリルアミドを主
成分とする共重合体を用い、これにABS樹脂板(10cm
×10cm×0.3cm )の片面に塗布した。その後、1時間乾
燥し、室温に放置後、これを試片として使用した。Example 4 A resist ink having a water-soluble / water-insoluble transition temperature of 20 ° C.
The copolymer whose main component is poly-NN-dimethylacrylamide prepared in
(× 10 cm × 0.3 cm) was applied on one side. Then, it was dried for 1 hour, left at room temperature, and used as a test piece.
【0037】次に、「エースクリーンA−220」(奥
野製薬工業(株)製)50g/l溶液を用い、60℃で
5分間浸漬し、脱脂を行なった。続いて30℃で水洗
後、CrO3 400g/lとH2 SO4 200ml/l
からなる処理液にて65℃で8分エッチング処理を行な
った後、30℃で水洗した。Next, a 50 g / l solution of "A-screen A-220" (manufactured by Okuno Chemical Industries Co., Ltd.) was used for immersion at 60 ° C. for 5 minutes for degreasing. Then, after washing with water at 30 ° C., CrO 3 400 g / l and H 2 SO 4 200 ml / l
Etching treatment was performed at 65 ° C. for 8 minutes with a treatment liquid consisting of, and then washed at 30 ° C. with water.
【0038】次いで、50ml/l塩酸により25℃で
2分中和し、水洗した後、「キャタリストC」(奥野製
薬工業(株)製)40ml/l及び塩酸50ml/lか
らなる処理剤によって25℃で触媒付与を4分間行なっ
た。Then, the mixture was neutralized with 50 ml / l hydrochloric acid at 25 ° C. for 2 minutes, washed with water, and then treated with "Catalyst C" (manufactured by Okuno Chemical Industries Co., Ltd.) 40 ml / l and hydrochloric acid 50 ml / l. The catalyst was applied at 25 ° C. for 4 minutes.
【0039】25℃で水洗後、37%アンモニア水50
ml/l及びフッ化アンモン1g/l溶液により35℃
で5分間活性化処理を行なった。その後15℃でレジス
トインキ層の除去を水洗により行なった。After washing with water at 25 ° C., 50% of 37% ammonia water
ml / l and ammonium fluoride 1g / l solution at 35 ° C
Was activated for 5 minutes. After that, the resist ink layer was removed by washing with water at 15 ° C.
【0040】最後に「TMP化学ニッケル」(奥野製薬
工業(株)製)を用い、40℃で8分にわたり無電解ニ
ッケルめっきを行なった。この結果、レジストインキ塗
布部分にはめっき被膜が析出しない部分めっきを得るこ
とができた。Finally, "TMP chemical nickel" (manufactured by Okuno Chemical Industries Co., Ltd.) was used to perform electroless nickel plating at 40 ° C. for 8 minutes. As a result, it was possible to obtain a partial plating in which the plating film was not deposited on the resist ink applied portion.
【0041】実施例5 レジストインキとして水溶/水不溶の転移温度を40℃
に調整したポリ−N−ヒドロキシエチルアクリルアミド
を主成分とする共重合体を用い、これにABS樹脂板
(10cm×10cm×0.3cm )の片面に塗布した。その後、1
時間乾燥し、室温に放置後、これを試片として使用し
た。Example 5 A resist ink having a water-soluble / water-insoluble transition temperature of 40 ° C.
The copolymer containing poly-N-hydroxyethylacrylamide as the main component, prepared as described in 1. above, was used and coated on one side of an ABS resin plate (10 cm × 10 cm × 0.3 cm). Then 1
After being dried for an hour and left at room temperature, this was used as a test piece.
【0042】次に、「エースクリーンA−220」(奥
野製薬工業(株)製)50g/l溶液を用い、60℃で
5分間浸漬し、脱脂を行なった。続いて60℃で湯洗
後、CrO3 400g/lとH2 SO4 200ml/l
からなる処理液にて65℃で8分エッチング処理を行な
い、その処理後25℃でレジストインキ層の除去を水洗
により行なった。Next, a 50 g / l solution of "A-screen A-220" (manufactured by Okuno Chemical Industries Co., Ltd.) was used for immersion for 5 minutes at 60 ° C. for degreasing. Subsequently, after washing with hot water at 60 ° C., CrO 3 400 g / l and H 2 SO 4 200 ml / l
Etching treatment was performed at 65 ° C. for 8 minutes with the treatment liquid consisting of, and after the treatment, the resist ink layer was removed by washing with water at 25 ° C.
【0043】次いで、50ml/l塩酸により25℃で
2分中和し、水洗した後、「キャタリストC」(奥野製
薬工業(株)製)40ml/l及び塩酸50ml/lか
らなる処理剤によって25℃で触媒付与を4分間行なっ
た。Then, the mixture was neutralized with 50 ml / l hydrochloric acid at 25 ° C. for 2 minutes, washed with water, and then treated with "Catalyst C" (Okuno Pharmaceutical Co., Ltd.) 40 ml / l and hydrochloric acid 50 ml / l. The catalyst was applied at 25 ° C. for 4 minutes.
【0044】25℃で水洗後、硫酸100ml/l及び
塩化ナトリウム1g/l溶液により50℃で5分間活性
化処理を行なった。After washing with water at 25 ° C., activation treatment was carried out with a solution of 100 ml / l of sulfuric acid and 1 g / l of sodium chloride at 50 ° C. for 5 minutes.
【0045】さらに25℃で水洗後、最後に「TMP化
学銅ニュー100」(奥野製薬工業(株)製)を用い、
25℃で12分にわたり無電解銅めっきを行なった。こ
の結果、レジストインキ塗布部分にはめっき被膜が析出
しない部分めっきを得ることができた。After further washing with water at 25 ° C., finally using “TMP Chemical Copper New 100” (manufactured by Okuno Chemical Industry Co., Ltd.),
Electroless copper plating was performed at 25 ° C for 12 minutes. As a result, it was possible to obtain a partial plating in which the plating film was not deposited on the resist ink applied portion.
【0046】実施例6 レジストインキとして水溶/水不溶の転移温度を40℃
に調整したポリ−N−メチルアクリルアミドを主成分と
する共重合体を用いた。サンプルとしてガラスエポキシ
積層板にセミアディティブ法にて銅めっきを行なったも
のを用いた。Example 6 A resist ink having a water-soluble / water-insoluble transition temperature of 40 ° C.
The copolymer containing poly-N-methylacrylamide as the main component, which was adjusted to 1. As a sample, a glass epoxy laminated plate plated with copper by a semi-additive method was used.
【0047】まず、サンプルの穴うめを行ない、次いで
上記レジストインキを用いてパターニングを行なった
後、「トップエッチ」(奥野製薬工業(株)製)を用
い、55℃にてアルカリエッチング処理を行なった。First, the sample was filled with holes, and then the resist ink was used for patterning, and then "Top Etch" (manufactured by Okuno Chemical Industries Co., Ltd.) was used to perform alkali etching at 55 ° C. It was
【0048】次いで、サンプルの穴うめを行なうと同時
にレジストインキ層の除去を水洗により行なった。さら
にハンダレジスト及びハンダ浸漬して端子めっきを施し
た。これにより部分めっきを利用したプリント配線基板
を得ることができた。Then, the sample was filled with holes, and at the same time, the resist ink layer was removed by washing with water. Further, it was dipped in solder resist and solder to perform terminal plating. As a result, a printed wiring board utilizing partial plating could be obtained.
【0049】試験例1 ABS樹脂を用いて実施例1と同様に脱脂及びエッチン
グを行ない、続く触媒付与工程にてパラジウムとスズを
吸着させた試片を表1に示すような各条件にて活性化処
理を行ない、処理後のパラジウムとスズの吸着量を測定
した。その結果を表1に示す。尚、ハロゲン化化合物と
して塩化ナトリウム1g/lを活性化処理に用いた。Test Example 1 Degreasing and etching were carried out in the same manner as in Example 1 using an ABS resin, and palladium and tin were adsorbed in the subsequent catalyst application step, and a test piece was activated under each condition as shown in Table 1. After the chemical treatment, the amount of adsorption of palladium and tin after the treatment was measured. The results are shown in Table 1. In addition, 1 g / l of sodium chloride was used for the activation treatment as a halogenated compound.
【0050】[0050]
【表1】 [Table 1]
【0051】この結果よりハロゲン化化合物を添加して
活性化処理を行なうほうが、無添加の場合に比して触媒
の除去効果が優れていることがわかる。From these results, it is understood that the effect of removing the catalyst is more excellent when the activation treatment is performed by adding the halogenated compound than when the halogenating compound is not added.
Claims (2)
としない部分にポリ−N−メチルアクリルアミド、ポリ
−N−イソプロピルアクリルアミド、ポリ−N−t-ブチ
ルアクリルアミド、ポリ−N−ヒドロキシエチルアクリ
ルアミド及びポリ−N−N−ジメチルアクリルアミドよ
りなる感温性ポリマーの中から選ばれた少なくとも1種
を主成分とするレジストインキの層を予め形成させ、エ
ッチング処理後に該レジストインキ層を除去し、次いで
無電解めっき処理を行なうことを特徴とする部分めっき
方法。1. In an electroless plating process, poly-N-methylacrylamide, poly-N-isopropylacrylamide, poly-Nt-butylacrylamide, poly-N-hydroxyethylacrylamide and poly A layer of a resist ink containing at least one selected from a temperature-sensitive polymer composed of -NN-dimethylacrylamide as a main component is formed in advance, the resist ink layer is removed after etching, and then electroless. A partial plating method characterized by performing a plating treatment.
ハロゲン化化合物を添加する請求項1記載の部分めっき
方法。2. The partial plating method according to claim 1, wherein a halogenated compound is added to the activation solution in the electroless plating step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26247591A JPH05106056A (en) | 1991-10-11 | 1991-10-11 | Partial plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26247591A JPH05106056A (en) | 1991-10-11 | 1991-10-11 | Partial plating method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05106056A true JPH05106056A (en) | 1993-04-27 |
Family
ID=17376305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26247591A Pending JPH05106056A (en) | 1991-10-11 | 1991-10-11 | Partial plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05106056A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000204480A (en) * | 1999-01-08 | 2000-07-25 | Origin Electric Co Ltd | Partial plating method and article provided with the method |
| JP2001240975A (en) * | 1999-12-21 | 2001-09-04 | Akira Ito | Partial plating method for substrate |
| JP2002094218A (en) * | 2000-09-18 | 2002-03-29 | Sankyo Kasei Co Ltd | Method of manufacturing molded circuit component |
| JP2007243033A (en) * | 2006-03-10 | 2007-09-20 | Seiko Epson Corp | Wiring board manufacturing method |
| JP5418497B2 (en) * | 2008-06-11 | 2014-02-19 | コニカミノルタ株式会社 | Metal pattern forming method and metal pattern |
-
1991
- 1991-10-11 JP JP26247591A patent/JPH05106056A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000204480A (en) * | 1999-01-08 | 2000-07-25 | Origin Electric Co Ltd | Partial plating method and article provided with the method |
| JP2001240975A (en) * | 1999-12-21 | 2001-09-04 | Akira Ito | Partial plating method for substrate |
| JP2002094218A (en) * | 2000-09-18 | 2002-03-29 | Sankyo Kasei Co Ltd | Method of manufacturing molded circuit component |
| JP2007243033A (en) * | 2006-03-10 | 2007-09-20 | Seiko Epson Corp | Wiring board manufacturing method |
| JP5418497B2 (en) * | 2008-06-11 | 2014-02-19 | コニカミノルタ株式会社 | Metal pattern forming method and metal pattern |
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