JPH047855A - wafer carrier - Google Patents
wafer carrierInfo
- Publication number
- JPH047855A JPH047855A JP2107584A JP10758490A JPH047855A JP H047855 A JPH047855 A JP H047855A JP 2107584 A JP2107584 A JP 2107584A JP 10758490 A JP10758490 A JP 10758490A JP H047855 A JPH047855 A JP H047855A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- dust
- wafer carrier
- carrier
- static
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ウェハがウェハキャリア内に存在する状態で
、静電気によるウェハ表面上への塵埃の付着が生じない
ウェハキャリアに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a wafer carrier that prevents dust from adhering to the wafer surface due to static electricity while the wafer is present in the wafer carrier.
従来、ウェハキャリア内ウェハの除電に関しては、特開
平１−１３７１７号公報に記載のように、ウェハキャリ
アにウェハに帯電した電荷を大地に放出する接地部を設
ける方法が考えられていた。Conventionally, with regard to eliminating static electricity from a wafer in a wafer carrier, a method has been considered in which a wafer carrier is provided with a grounding part that discharges the electric charge on the wafer to the ground, as described in Japanese Patent Application Laid-Open No. 1-13717.
上記従来技術は、ウェハキャリアのウェハ収納部は材質
として絶縁物が最も一般的であるため帯電が起こりやす
く、帯電電位は数十ｋＶになることもあるという点につ
いて考慮がされていなかった。このため、ウェハが除電
されていたとしても、ウェハ収納部によってつくられる
電界の影響で塵埃が引き寄せられ、ウェハ周辺部の塵埃
濃度が高くなり、直接、静電気力により付着する塵埃は
少ないとしても、間接的な静電気の影響により塵埃濃度
が高くなるためにウェハに付着する塵埃が多くなるとい
う問題があった。The above-mentioned conventional technology does not take into account the fact that the wafer storage part of the wafer carrier is most commonly made of an insulating material and is therefore easily charged, and the charging potential can reach several tens of kV. For this reason, even if the wafer has been neutralized, dust is attracted by the electric field created by the wafer housing, increasing the dust concentration around the wafer, and even though there is little dust directly adhering to the wafer due to electrostatic force, There is a problem in that the dust concentration increases due to the influence of indirect static electricity, so that a large amount of dust adheres to the wafer.
また、従来技術は、塵埃が帯電している場合にはウェハ
が除電されていてもウェハと塵埃の間にクーロンカ以外
の静電気力である影像力、誘起力が働くという点につい
ての考慮がされておらず、塵埃はウェハに引き寄せられ
るという問題点があった。Furthermore, the conventional technology does not take into consideration the fact that when dust is electrically charged, image force and induced force, which are electrostatic forces other than Coulomba, act between the wafer and the dust even if the wafer is neutralized. There was a problem in that the dust was attracted to the wafer.
さらに、従来技術は、接地部として導電性の金属等を用
いるが、金属材質はエツチング溶液などにより腐食する
という点について考慮されておらず、ウェハキャリアの
本体の材質として耐薬品性の良いテフロン等を用いたと
してもエツチング溶液等は金属が腐食するために使用で
きないという問題点があった。Furthermore, although the conventional technology uses a conductive metal etc. as the grounding part, it does not take into consideration the fact that metal materials are corroded by etching solutions, etc., and Teflon, which has good chemical resistance, etc., is used as the material for the main body of the wafer carrier. Even if etching solutions were used, there was a problem in that they could not be used because they would corrode the metal.
本発明の目的はウェハ、ウェハ収納部及びウェハキャリ
ア内の塵埃を同時に除電することにより静電気が塵埃付
着に及ぼす影響をすべて排除することにあり、さらに、
金属が腐食するエツチング等の溶液にも使用可能とする
ことにある。An object of the present invention is to eliminate all effects of static electricity on dust adhesion by simultaneously eliminating static electricity from dust inside a wafer, a wafer storage section, and a wafer carrier, and further,
The purpose is to enable use in solutions such as etching that corrode metals.
上記目的を達成するために、本発明はウェハキャリアに
正負のイオンを同量に発生する除電機構を設けた。また
、イオン発生機構をウェハ収納部から着脱可能とした。In order to achieve the above object, the present invention provides a wafer carrier with a static elimination mechanism that generates equal amounts of positive and negative ions. Additionally, the ion generation mechanism was made removable from the wafer storage section.
除電機構から正負に帯電したイオンが発生し、そのイオ
ンが帯電物体に付着することにより、帯電物体であるウ
ェハ、ウェハ収納部、及び、ウェハキャリア内の塵埃は
電気的に中和して除電される。また、除電機構をウェハ
収納部から着脱可能としたためウェハキャリアを金属が
腐食する溶液に浸す場合にも除電機構を取り外し、ウェ
ハ収納部のみを溶液中に浸すことにより使用可能となる
。Positively and negatively charged ions are generated from the static elimination mechanism, and the ions adhere to the charged object, thereby electrically neutralizing and eliminating static electricity from the charged objects such as the wafer, the wafer storage area, and the dust inside the wafer carrier. Ru. Furthermore, since the static elimination mechanism is made detachable from the wafer storage section, even when the wafer carrier is immersed in a solution that corrodes metal, it can be used by removing the static elimination mechanism and immersing only the wafer storage section in the solution.
以下、本発明の一実施例を第１図により説明する。テフ
ロン製のウェハ収納部５にウェハ４が収納されていて、
ウェハ収納部５の上部には除電機構６が着脱可能に取り
付けられている。除電機構６は下から電極１．フィルタ
３．送風用ファン２によって構成され、電極にはスイッ
チ９によって電源のＯＮ、ＯＦＦのできる高電圧電源７
がつながっている。電源をＯＮすることにより電極１に
は高電圧電源７から交流の高電圧が印加され、電極に付
いている電極針８の先から正負のコロナ放電が生じ、気
中の気体分子がイオン化される。このイオン化した分子
は、送風用ファンにより発生し、フィルタを通過するこ
とにより塵埃が捕集されて清浄となった気流によってウ
ェハ、ウェハ収納部、及び、ウェハキャリア内の塵埃に
運ばれ、それらに付着して除電する。本実施例によれば
、イオン化した分子が送風ファンによって運ばれるため
効率良くウェハ、ウェハ収納部、及び、ウェハキャリア
内の塵埃の除電ができる。An embodiment of the present invention will be described below with reference to FIG. A wafer 4 is stored in a wafer storage part 5 made of Teflon,
A static eliminating mechanism 6 is removably attached to the upper part of the wafer storage section 5. The static eliminating mechanism 6 connects the electrode 1 from below. Filter 3. It is composed of a blower fan 2, and a high voltage power source 7 that can be turned on and off with a switch 9 is attached to the electrode.
are connected. By turning on the power, a high alternating voltage is applied to the electrode 1 from the high voltage power supply 7, a positive and negative corona discharge is generated from the tip of the electrode needle 8 attached to the electrode, and gas molecules in the air are ionized. . These ionized molecules are generated by a blower fan, and are carried to the wafer, the wafer storage area, and the dust in the wafer carrier by the clean airflow that collects dust by passing through a filter. It adheres and removes static electricity. According to this embodiment, the ionized molecules are transported by the blower fan, so that the dust inside the wafer, wafer storage section, and wafer carrier can be efficiently neutralized.
また、除電機構を取り外すことによりエツチングを行な
う際にも使用できるという効果がある。Furthermore, by removing the static eliminating mechanism, the device can be used for etching as well.
次に本発明の第二の実施例を第２図により説明する。テ
フロン製のウェハ収納部５にウェハ４が収納されていて
ウェハ収納部５の上部には除電機構６が着脱可能に取り
付けられている。除電機構６は上面１１．下面１２が網
状になった立方体で四本の支持棒１３によって支えられ
ている。除電機構６の中には弱い放射性物質が子細入っ
ている。Next, a second embodiment of the present invention will be described with reference to FIG. Wafers 4 are stored in a wafer storage section 5 made of Teflon, and a static elimination mechanism 6 is removably attached to the upper part of the wafer storage section 5. The static elimination mechanism 6 is located on the upper surface 11. It is a cube with a net-like lower surface 12 and is supported by four support rods 13. The static eliminating mechanism 6 contains a small amount of weak radioactive material.
放射性物質１０は気中の分子を電離し、イオン化する。The radioactive substance 10 ionizes and ionizes molecules in the air.
除電機構の付いたウェハキャリアをダウンフロー中に置
くことによりイオンは下方へと流れ。Ions flow downward by placing a wafer carrier equipped with a static elimination mechanism in the downflow.
ウェハ、ウェハ収納部、及び、ウェハキャリア内の塵埃
は除電される。本発明によると、容易な構造でウェハ、
ウェハ収納部、及び、ウェハキャリア内の塵埃の除電が
できる。Dust in the wafer, wafer storage section, and wafer carrier is neutralized. According to the present invention, a wafer with easy structure,
Dust in the wafer storage area and wafer carrier can be neutralized.
また、除電機構を取り外すことによりエツチングを行な
う際にも使用できるという効果がある。Furthermore, by removing the static eliminating mechanism, the device can be used for etching as well.
本発明によれば、ウェハ、ウェハ収納部及びウェハキャ
リア内の塵埃を除電することができるので、静電気の影
響で付着していた塵埃をなくすことができる。According to the present invention, the dust inside the wafer, the wafer storage section, and the wafer carrier can be neutralized, so that the dust attached due to the influence of static electricity can be eliminated.
第１図は本発明の一実施例の説明図、第２図は本発明の
第二の実施例の斜視図である。
１・・・電極、２・・・送風用ファン、３・・・フィル
タ、４・・・ウェハ、５・・・ウェハ収納部、６・・・
除電機構、７・・・高電圧電源、８・・・電極針、９・
・・スイッチ、１゜・・・放射性物質、１１・・・上面
、１２・・・下面、１３・・・支持棒。
３−−− Ｖイルフ
８−一一電伸針
寓２−図
（〇−
放身ゴへ」巳１セつ１５［FIG. 1 is an explanatory diagram of one embodiment of the invention, and FIG. 2 is a perspective view of a second embodiment of the invention. DESCRIPTION OF SYMBOLS 1...Electrode, 2...Blower fan, 3...Filter, 4...Wafer, 5...Wafer storage part, 6...
Static elimination mechanism, 7... High voltage power supply, 8... Electrode needle, 9...
...Switch, 1°...Radioactive substance, 11...Top surface, 12...Bottom surface, 13...Support rod. 3---V Ilf 8-11 Den needle extension 2-Figure (〇- Hoshin Gohe) Snake 1 set 15 [
Claims (1)
ェハの収納部に正負のイオンを発生し、前記ウェハ、前
記ウェハ収納部及び前記ウェハキャリア内の塵埃を除電
する機構を設けたことを特徴とするウェハキャリア。1. A wafer carrier for accommodating wafers, characterized in that a mechanism is provided for generating positive and negative ions in the wafer accommodating section to eliminate static electricity from dust in the wafer, the wafer accommodating section, and the wafer carrier. career.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2107584A JPH047855A (en) | 1990-04-25 | 1990-04-25 | wafer carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2107584A JPH047855A (en) | 1990-04-25 | 1990-04-25 | wafer carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH047855A true JPH047855A (en) | 1992-01-13 |
Family
ID=14462869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2107584A Pending JPH047855A (en) | 1990-04-25 | 1990-04-25 | wafer carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH047855A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2324412A (en) * | 1997-04-16 | 1998-10-21 | Nec Corp | Wafer storage box |
| WO2003098675A1 (en) * | 2002-05-13 | 2003-11-27 | Intel Corporation | Apparatus, system and method to reduce wafer warpage |
| WO2011108215A1 (en) * | 2010-03-04 | 2011-09-09 | 東京エレクトロン株式会社 | Substrate storing device |
-
1990
- 1990-04-25 JP JP2107584A patent/JPH047855A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2324412A (en) * | 1997-04-16 | 1998-10-21 | Nec Corp | Wafer storage box |
| US5964344A (en) * | 1997-04-16 | 1999-10-12 | Nec Corporation | Wafer storage box and method for preventing attachment of dust caused by static electricity on a wafer storage box |
| GB2324412B (en) * | 1997-04-16 | 2001-10-24 | Nec Corp | Wafer storage box |
| WO2003098675A1 (en) * | 2002-05-13 | 2003-11-27 | Intel Corporation | Apparatus, system and method to reduce wafer warpage |
| WO2011108215A1 (en) * | 2010-03-04 | 2011-09-09 | 東京エレクトロン株式会社 | Substrate storing device |
| JP2011186006A (en) * | 2010-03-04 | 2011-09-22 | Tokyo Electron Ltd | Substrate storage device |
| CN102714169A (en) * | 2010-03-04 | 2012-10-03 | 东京毅力科创株式会社 | Substrate storage device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4516991A (en) | Air cleaning apparatus | |
| EP0216450B1 (en) | Corona generating device | |
| JP2520311B2 (en) | Ion generator and static elimination equipment for charged articles in clean space using the same | |
| US4980796A (en) | Gas ionization system and method | |
| JP2013063430A (en) | Method and device for cleaning gaseous fluid | |
| JPS61144670A (en) | Corona generator | |
| JP3537843B2 (en) | Clean room ionizer | |
| GB2016305A (en) | Electrostatically removing particulate material from gas | |
| JPS6314176A (en) | Corona discharger with control screen | |
| WO2020065648A1 (en) | A method of air disinfection and an air disinfection apparatus comprising an unipolar corona discharge zone and an electrical field | |
| KR102388347B1 (en) | Apparatus and method for performing dust collection with ultra low power | |
| JPH07325460A (en) | Member charging device and xerographic printing apparatus | |
| US5707429A (en) | Ionizing structure for ambient air treatment | |
| JP2006102651A (en) | Air purification device | |
| JPH047855A (en) | wafer carrier | |
| JPH1057840A (en) | Air purifier | |
| CN114901397B (en) | Electric dust collector | |
| JPH04223085A (en) | Corona air ionizer and method for in hibiting the generation of fine particles | |
| JPH09192209A (en) | Method for simply adjusting mixing ratio of plus ion and minus ion in ionization of gas by x-ray, air cleaner under application of the method, and device eliminating or giving electrostatic charge | |
| JPH09232068A (en) | Negative ion generator | |
| JP2001345199A (en) | Ionizer and manufacturing apparatus having the same | |
| US20040001786A1 (en) | Anion-generating device | |
| JPS5695351A (en) | Electrical dust collector | |
| JP2622821B2 (en) | De-electrode structure | |
| JP4221501B2 (en) | Aerosol charge neutralizer |