JPH0462644B2 - - Google Patents
Info
- Publication number
- JPH0462644B2 JPH0462644B2 JP62039891A JP3989187A JPH0462644B2 JP H0462644 B2 JPH0462644 B2 JP H0462644B2 JP 62039891 A JP62039891 A JP 62039891A JP 3989187 A JP3989187 A JP 3989187A JP H0462644 B2 JPH0462644 B2 JP H0462644B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- ions
- ion exchange
- monovalent
- exchange
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 40
- 238000005342 ion exchange Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 24
- 239000011521 glass Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 150000003839 salts Chemical class 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 229910001417 caesium ion Inorganic materials 0.000 claims 2
- 239000010408 film Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 238000011282 treatment Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Description
〔産業上の利用分野〕
本発明は、イオン交換法による埋込み型シング
ルモード光導波路作製方法に関し、特に電界印加
を必要としないシングルモード光導波路製造方法
に関する。
〔従来の技術〕
シングルモードフアイバを用いた光伝送システ
ムや光センサーシステムには、分岐合流や分波合
波などのために種々のシングルモード光デバイス
が必要となる。これらのデバイスをガラス基板上
に作製する方法としては、いくつかのイオン交換
法が知られている。しかし、実用上の効果を考え
ると、ガラス基板導波路は埋込み型であつて、し
かもシングルモードフアイバとの直接結合の効率
が良いように電界分布がほぼ一致したものが望ま
しい。従来公知の技術で上述の導波路を作製でき
る方法に近いものとしては、2段階電界印加イオ
ン交換法があつた。この方法は、ガラス基板の上
に金属などのマスク膜を積層した後、導波路の形
状にパターニングし、電界を印加した状態で溶融
塩と接触させ該基板の表面付近に屈折率の高い部
分を形成し、次いでマスクを除去したのち第2回
目のイオン交換をするものである。
上記の方法については例えばSpringer−
Verlag社刊の「Integrated Optics」第71頁に記
載されているH.Lilienhofらの論文に詳しく説明
されている。
また特公昭47−5975号公報には、2段階のイオ
ン交換を行なつてガラス基板中に、断面上で中心
より周辺に向かつて徐々に屈折率の減少する光電
送路をつくる方法が示されている。
〔発明が解決しようとする問題点〕
電界印加を用いた導波路作製方法では、ガラス
基板表裏に接触させる溶融塩にうまく電界をかけ
る必要があり、イオン交換工程が複雑になるとい
う問題点があつた。
また特公昭48−5975号公報には、埋込み型の導
波路の断面を円形ないし楕円形にするための条
件、さらにはシングルモード導波路とすることに
ついて具体的に示していない。
本発明は、電界印加を必要としない簡単な熱イ
オン交換法で、断面が円形ないし楕円形に近い埋
込み型シングルモード光導波路を製造する方法を
新規に提供しようとするものである。
〔問題点を解決するための手段〕
上記問題点を解決するために、本発明はイオン
交換の工程を第1段及び第2段とも熱イオン交換
とし、さらに埋込み型の断面が円形ないし楕円形
に近い導波路を実現するために必要とされるイオ
ン交換条件を第1段及び第2段に対して明確に定
めた。
すなわち、第1の熱イオン交換時の実効イオン
交換定数D1とイオン交換時間t1との積D1t1を、
3D1t130
とし、
第2の熱イオン交換時の実効イオン交換定数
D2とイオン交換時間t2との積D2t2を、
0.6D2t20.75×D1t1
とする。
本発明に使用できイオン交換用イオンとしては
1価のアルカリイオン即ちLi、Na、K、Rb、Cs
イオンの他1価のTlイオン及びAgイオンがあ
る。またイオン交換用マスクとしてはTi、Alの
他、SiO2などの誘導体薄膜が使用できる。
〔作用〕
ガラス基板と溶融塩との間のイオン交換はイオ
ンの実効的交換定数Dと実効的交換時間tの積
Dtで指定することができる。ここで言う実効的
交換定数とは、2種のイオン間で交換が行われた
時に、一方のイオンの移動が拡散方程式で記述さ
れるとした場合の見かけ上の拡散定数である。
一般に実効的交換定数Dは温度の関数であるか
ら、Dt積は厳密には積分で求められるものであ
る。そして第1段、第2段のイオン交換処理にお
けるDt積を前述した範囲内とすることにより、
断面が円形に近いシングルモード光導波路が得ら
れる。
〔実施例〕
第1図は本発明の一実施例を段階的に示す断面
図である。
1はガラス基板であり、イオン交換用に1価イ
オンとしてNa及びKを合計13mole%含有し、
SiO2、B2O3を主たる網目形成酸化物とした研磨
済みの高品質ガラス板から成る。
ガラス基板1の片面にスパツタ法で厚さ1μm
程度のTi膜から成る被覆膜2aを蒸着し、この
被覆膜2aにフオトリソグラフイとエツチング工
程により所定の導波路パターンの開口2cを形成
してマスク膜2bとする。
上記のマスク膜2bを施したガラス基板1は第
1の溶融塩4a中に浸漬して第1段の熱イオン交
換処理を行なう。
図外の電気炉内に置かれたるつぼ3中に保持さ
れている第1の溶融塩4aは、ガラス基板1の、
マスク膜2bに設けられた開口2c付近の屈折率
を増加させるために用いるもので、1価のイオン
からなる群より選ばれた少なくとも1つの第1の
イオンを含有する溶融塩である。この溶融塩4a
としては硫酸塩または硝酸塩の他に、イオン交換
を均一にするため、またガラス基板の損傷を防ぐ
ために必要に応じて塩化塩が添加される。
上記の第1段熱イオン交換処理を終えた後、基
板1の表面からマスク膜2bを除去し、このマス
ク膜を除去した基板1を第2の溶融塩4b中に浸
漬して第2段熱イオン交換処理を行なう。
第2溶融塩4bは、ガラス基板1の表面付近の
屈折率を減少させるために用いるもので、1価の
イオンからなる群より選ばれた少なくとも1つの
第2のイオンを含有する溶融塩である。
ここで、第1のイオンと第2のイオンはガラス
基板1に対して屈折率を変化させる作用が、少な
くとも互いに反対でなければならない。
上記の第2段熱イオン交換処理を終了した後、
ガラス基板1内に埋込み型の導波路部5が形成さ
れる。
上述の実施例においては、第1のイオンとして
Tlイオンが、第2のイオンとしてKイオンが用
いられた。第1の溶融塩4aはTlイオンを含有
する硝酸塩、第2の溶融塩4bはKイオンを含有
する硫酸塩である。イオン交換を行なう温度は、
イオン交換定数が大きく、しかもガラス基板1に
反りなどの変形が生じないガラス転移点付近の温
度に設定した。
次に本発明におけるイオン交換条件について詳
しく説明する。
ガラス基板と溶融塩との間のイオン交換は、イ
オンの実効的交換定数Dと実効的交換時間tとの
積Dtで指定することができる。
ここで言う実効的交換定数とは、2種のイオン
間で交換が行われた時に、一方のイオンの移動が
拡散方程式で記述されるとした場合の見かけ上の
拡散定数である。
一般に実効的交換定数Dは温度の関数であるか
ら、Dt積は厳密には積分で求められるものであ
る。
実施例においては、第1表に示す組合せで第1
段及び第2段のイオン交換条件を実験した(条件
はDt積で表す)。
第1表に示したように、試料No.1〜5では導波
路断面の寸法が長軸14〜21μm、短軸8〜15μm
であるものが得られる。
この導波路寸法において最大屈折率差を0.004
程度に設定すると導波路がシングルモードとな
り、しかもシングルモードフアイバに対し比較的
結合効率を良くすることができる。
試料No.6では導波路寸法が大きすぎシングルモ
ード導波路にすることが困難である。
試料No.7〜10では第2段のイオン交換が進みす
ぎ、導波路寸法が小さくなると同時に、第1のイ
[Industrial Application Field] The present invention relates to a method for manufacturing an embedded single-mode optical waveguide using an ion exchange method, and particularly to a method for manufacturing a single-mode optical waveguide that does not require the application of an electric field. [Prior Art] Optical transmission systems and optical sensor systems using single-mode fibers require various single-mode optical devices for branching, merging, demultiplexing, and multiplexing. Several ion exchange methods are known as methods for producing these devices on glass substrates. However, in consideration of practical effects, it is desirable that the glass substrate waveguide be of a buried type, and that the electric field distribution be approximately the same so that the direct coupling with the single mode fiber is efficient. A two-step electric field application ion exchange method is a method that is close to the method for producing the above-mentioned waveguide using conventionally known techniques. In this method, a mask film made of metal or the like is laminated on a glass substrate, then patterned into the shape of a waveguide, and brought into contact with molten salt while an electric field is applied to form a high refractive index part near the surface of the substrate. After the mask is removed, a second ion exchange is performed. For the above method, for example, Springer-
It is explained in detail in the paper by H. Lilienhof et al., published on page 71 of "Integrated Optics" published by Verlag. Furthermore, Japanese Patent Publication No. 47-5975 discloses a method of creating a photoelectric transmission path in a glass substrate in which the refractive index gradually decreases from the center to the periphery in a cross section by performing two-stage ion exchange. ing. [Problems to be solved by the invention] In the waveguide fabrication method using electric field application, it is necessary to apply an electric field to the molten salt that is brought into contact with the front and back surfaces of the glass substrate, which poses the problem of complicating the ion exchange process. Ta. Moreover, Japanese Patent Publication No. 48-5975 does not specifically indicate the conditions for making the cross section of the buried waveguide circular or elliptical, nor does it specifically indicate the conditions for forming a single mode waveguide. The present invention aims to provide a novel method for manufacturing a buried single-mode optical waveguide having a circular or nearly elliptical cross section using a simple thermal ion exchange method that does not require the application of an electric field. [Means for Solving the Problems] In order to solve the above problems, the present invention uses thermal ion exchange in both the first and second stages of ion exchange, and furthermore, the cross section of the implantable mold is circular or oval. The ion exchange conditions required to realize a waveguide close to the above were clearly defined for the first and second stages. That is, the product D 1 t 1 of the effective ion exchange constant D 1 during the first thermionic exchange and the ion exchange time t 1 is 3D 1 t 1 30 , and the effective ion exchange constant during the second thermionic exchange
Let the product D 2 t 2 of D 2 and ion exchange time t 2 be 0.6D 2 t 2 0.75×D 1 t 1 . Ions for ion exchange that can be used in the present invention include monovalent alkali ions, such as Li, Na, K, Rb, and Cs.
In addition to ions, there are monovalent Tl ions and Ag ions. In addition to Ti and Al, thin films of dielectrics such as SiO 2 can be used as masks for ion exchange. [Operation] Ion exchange between the glass substrate and the molten salt is the product of the effective exchange constant D of ions and the effective exchange time t.
It can be specified by Dt. The effective exchange constant referred to here is an apparent diffusion constant when the movement of one ion is described by a diffusion equation when two types of ions are exchanged. Since the effective exchange constant D is generally a function of temperature, the Dt product is strictly determined by integration. By setting the Dt product in the first and second stage ion exchange treatments within the range mentioned above,
A single-mode optical waveguide with a nearly circular cross section can be obtained. [Embodiment] FIG. 1 is a cross-sectional view showing an embodiment of the present invention step by step. 1 is a glass substrate containing a total of 13 mole% of Na and K as monovalent ions for ion exchange;
Consists of a polished high-quality glass plate with SiO 2 and B 2 O 3 as the main network-forming oxides. 1 μm thick on one side of glass substrate 1 by sputtering method
A coating film 2a made of a Ti film of about 100% is deposited, and openings 2c of a predetermined waveguide pattern are formed in the coating film 2a by photolithography and etching steps to form a mask film 2b. The glass substrate 1 coated with the above-mentioned mask film 2b is immersed in the first molten salt 4a to perform a first-stage thermal ion exchange treatment. The first molten salt 4a held in a crucible 3 placed in an electric furnace (not shown) is
It is used to increase the refractive index near the opening 2c provided in the mask film 2b, and is a molten salt containing at least one first ion selected from the group consisting of monovalent ions. This molten salt 4a
In addition to sulfate or nitrate, chloride salt is added as necessary to make ion exchange uniform and to prevent damage to the glass substrate. After completing the first stage thermal ion exchange treatment, the mask film 2b is removed from the surface of the substrate 1, and the substrate 1 from which the mask film has been removed is immersed in a second molten salt 4b to perform a second stage thermal ion exchange process. Perform ion exchange treatment. The second molten salt 4b is used to reduce the refractive index near the surface of the glass substrate 1, and is a molten salt containing at least one second ion selected from the group consisting of monovalent ions. . Here, the first ion and the second ion must have at least opposite effects on the glass substrate 1 to change the refractive index. After completing the second stage thermionic exchange treatment described above,
A buried waveguide section 5 is formed within the glass substrate 1. In the above embodiment, as the first ion,
Tl ions were used and K ions were used as the second ion. The first molten salt 4a is a nitrate containing Tl ions, and the second molten salt 4b is a sulfate containing K ions. The temperature at which ion exchange is performed is
The temperature was set near the glass transition point at which the ion exchange constant was large and the glass substrate 1 did not undergo any deformation such as warping. Next, the ion exchange conditions in the present invention will be explained in detail. Ion exchange between the glass substrate and the molten salt can be specified by the product Dt of the effective exchange constant D of ions and the effective exchange time t. The effective exchange constant referred to here is an apparent diffusion constant when the movement of one ion is described by a diffusion equation when two types of ions are exchanged. Since the effective exchange constant D is generally a function of temperature, the Dt product is strictly determined by integration. In the examples, the first combination shown in Table 1 was used.
The ion exchange conditions for the stage and second stage were tested (conditions are expressed as Dt product). As shown in Table 1, in samples No. 1 to 5, the dimensions of the waveguide cross section are 14 to 21 μm on the long axis and 8 to 15 μm on the short axis.
You get what you want. With this waveguide dimension, the maximum refractive index difference is 0.004
If the waveguide is set to a certain degree, the waveguide becomes a single mode, and the coupling efficiency can be made relatively good with respect to a single mode fiber. In sample No. 6, the waveguide dimensions are too large, making it difficult to form a single mode waveguide. In samples Nos. 7 to 10, the ion exchange in the second stage progressed too much, and the waveguide dimensions became smaller, while at the same time
本発明によれば、従来不可能であつた熱イオン
交換法による埋込み型シングルモード導波路が実
現できる。
本発明方法は電界印加を必要としないのでイオ
ン交換が非常に簡単になるという利点のほか、電
界印加法で発生しがちなガラス表面の損傷や導波
路の不均一性が減らせるという利点もある。
従つて、本発明による埋込み型シングルモード
光導波路の製造方法は安価な大量生産に極めて適
している。
According to the present invention, it is possible to realize an embedded single mode waveguide using thermionic exchange method, which was previously impossible. Since the method of the present invention does not require the application of an electric field, it has the advantage that ion exchange is very simple, and it also has the advantage that damage to the glass surface and non-uniformity of the waveguide that tend to occur with the electric field application method can be reduced. . Therefore, the method of manufacturing a buried single-mode optical waveguide according to the present invention is extremely suitable for inexpensive mass production.
第1図は本発明の一実施例を段階的に示す断面
図、第2図は本発明方法で得られるイオン交換導
波路のイオン濃度分布の一例を示す断面図、第3
図は第1段及び第2段の実効イオン交換定数とイ
オン交換時間の積と導波路寸法の適、不適を示す
図である。
1……ガラス基板、2b……マスク膜、2c…
…導波路パターン開口、4a……第1の溶融塩、
4b……第2の溶融塩、5……導波路。
FIG. 1 is a cross-sectional view showing step-by-step an embodiment of the present invention, FIG. 2 is a cross-sectional view showing an example of the ion concentration distribution of an ion exchange waveguide obtained by the method of the present invention, and FIG.
The figure shows the product of the effective ion exchange constant and ion exchange time in the first stage and the second stage, and the suitability and unsuitability of the waveguide dimensions. 1... Glass substrate, 2b... Mask film, 2c...
...Waveguide pattern opening, 4a...first molten salt,
4b... second molten salt, 5... waveguide.
Claims (1)
オン及び1価のTlイオン及びAgイオンからなる
群より選ばれた1価イオンを含んだガラス基板に
イオン交換制御用のマスク膜を形成する工程と、
該マスク膜に所定の導波路パターンを形成する工
程と、該ガラス基板の屈折率を変える第1の1価
イオンを少なくとも1種含有する溶融塩中に該ガ
ラス基板を高温時に浸漬し第1の熱イオン交換を
する工程と、該ガラス基板の屈折率を該第1のイ
オンとは反対の方向に変化させる第2の1価イオ
ンを少なくとも1種含有する溶融塩中に、前記マ
スクを除去したガラス基板を高温時に浸漬し第2
の熱イオン交換をする工程とからなる2段階熱イ
オン交換法であつて、第1の熱イオン交換時の実
効イオン交換定数D1とイオン交換時間t1の積
D1・t1を 3D1t130 とし、第2の熱イオン交換時の実効イオン交換定
数D2とイオン交換時間t2の積D2t2を 0.6D2t20.75×D1t1 とした埋込み型シングルモード光導波路の製造方
法。 2 前記第1の1価イオンがTl又はCsイオンの
少なくとも1つが含まれるイオンであり、該第2
の1価イオンがNa又はKイオンの少なくとも1
つが含まれるイオンである特許請求の範囲第1項
記載の埋込み型シングルモード光導波路の製造方
法。[Claims] 1. A mask film for ion exchange control is provided on a glass substrate containing monovalent ions selected from the group consisting of monovalent alkali ions, monovalent Tl ions, and Ag ions as ion exchange ions. a step of forming;
forming a predetermined waveguide pattern on the mask film; and immersing the glass substrate at high temperature in a molten salt containing at least one first monovalent ion that changes the refractive index of the glass substrate. The mask is removed during a step of thermal ion exchange and into a molten salt containing at least one second monovalent ion that changes the refractive index of the glass substrate in a direction opposite to that of the first ions. The glass substrate is immersed at high temperature and the second
This is a two-step thermionic exchange method consisting of a step of thermionic exchange of
Let D 1 · t 1 be 3D 1 t 1 30, and the product D 2 t 2 of the effective ion exchange constant D 2 during the second thermionic exchange and the ion exchange time t 2 is 0.6D 2 t 2 0.75 ×D 1 t 1. Manufacturing method of embedded single mode optical waveguide. 2 the first monovalent ion is an ion containing at least one of Tl or Cs ions, and the second monovalent ion is an ion containing at least one of Tl or Cs ions;
at least one monovalent ion of Na or K ion
2. The method of manufacturing a buried single-mode optical waveguide according to claim 1, wherein the ions include:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62039891A JPS63206709A (en) | 1987-02-23 | 1987-02-23 | Production of flush type single mode light guide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62039891A JPS63206709A (en) | 1987-02-23 | 1987-02-23 | Production of flush type single mode light guide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63206709A JPS63206709A (en) | 1988-08-26 |
| JPH0462644B2 true JPH0462644B2 (en) | 1992-10-07 |
Family
ID=12565591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62039891A Granted JPS63206709A (en) | 1987-02-23 | 1987-02-23 | Production of flush type single mode light guide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63206709A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0791091B2 (en) * | 1989-11-06 | 1995-10-04 | 日本板硝子株式会社 | Method for manufacturing low-loss embedded waveguide |
| IT1240124B (en) * | 1990-03-07 | 1993-11-27 | Cselt Centro Studi Lab Telecom | METHOD FOR RETOUCHING THE OPERATING CHARACTERISTICS OF INTEGRATED OPTICAL DEVICES. |
| US5359682A (en) * | 1990-03-07 | 1994-10-25 | Cselt-Centro Studi E Laboratori Telecomunicazioni S.P.A. | Method of adjusting the operation characteristics of integrated optical devices |
| US5125946A (en) * | 1990-12-10 | 1992-06-30 | Corning Incorporated | Manufacturing method for planar optical waveguides |
-
1987
- 1987-02-23 JP JP62039891A patent/JPS63206709A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63206709A (en) | 1988-08-26 |
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