JPH045873A - Manufacture of superconducting contact and superconducting circuit - Google Patents
Manufacture of superconducting contact and superconducting circuitInfo
- Publication number
- JPH045873A JPH045873A JP2106828A JP10682890A JPH045873A JP H045873 A JPH045873 A JP H045873A JP 2106828 A JP2106828 A JP 2106828A JP 10682890 A JP10682890 A JP 10682890A JP H045873 A JPH045873 A JP H045873A
- Authority
- JP
- Japan
- Prior art keywords
- film
- superconducting
- electrode
- contact
- niobium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ジョセフソン素子を含む高周波信号増幅器な
どに応用する直流駆動型超伝導量子干渉素子（ＤＣＳｕ
ｐｅｒｃｏｎｄｕｃｔｉｎｇ ｇｕａｎｔｕｍ Ｉｎｔ
ｅｒｆｅｒｅｎｃｅｌｌｅｖｉｃｅ 以下 ＤＣ５Ｑ
ＵＩＤ素子と略する）。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is directed to a direct current driven superconducting quantum interference device (DCSu) which is applied to high frequency signal amplifiers including Josephson devices.
perconducting quantum Int
error cellevice below DC5Q
(abbreviated as UID element).
及び、超伝導集積回路の作成方法及びその方法で作られ
た超伝導集積回路に関する。The present invention also relates to a method for producing a superconducting integrated circuit and a superconducting integrated circuit produced by the method.
この発明は、下部ニオブ（Ｎｂ）電極（ａ膜）と絶縁膜
をはさんで対向する上部電極（超伝導薄膜）間で、超伝
導コンタクトを形成する方法において、コンタクト部分
の上記下部電極表面に窒化ニオブ（ＮｂＮ）膜を有する
構成にすることにより、下部電極ニオブ膜表面が下部電
極作製後、上部電極作製までの間ニオブ膜表面が酸化さ
れに＜＜、上部電極との超伝導コンタクトが良好に保持
できることを目的としている。The present invention provides a method for forming a superconducting contact between a lower niobium (Nb) electrode (a film) and an upper electrode (superconducting thin film) facing each other with an insulating film interposed therebetween. By adopting a structure having a niobium nitride (NbN) film, the surface of the niobium film of the lower electrode is not oxidized between the time when the lower electrode is fabricated and the upper electrode is fabricated, resulting in good superconducting contact with the upper electrode. The purpose is to be able to maintain
従来、第３図に示すように、下部ニオブ（Ｎｂ）電極（
薄膜）３と絶縁膜５をはさんで対向する上部電極（超伝
導薄膜）６間で、超伝導コンタクトを形成する方法にお
いて、下部電極３と上部電極６は直接コンタク１−する
よう形成されていた。Conventionally, as shown in Fig. 3, a lower niobium (Nb) electrode (
In the method of forming a superconducting contact between a thin film) 3 and an upper electrode (superconducting thin film) 6 facing each other with an insulating film 5 in between, the lower electrode 3 and the upper electrode 6 are formed to make direct contact 1-. Ta.
しかし、従来の超伝導コンタクトでは、下部電極ニオブ
膜表面が下部電極作製後、上部電極作製までの間におい
て酸化されやすいため、上部電極との超伝導コンタクｌ
−が、悪化するという課題があった。However, in conventional superconducting contacts, the surface of the lower electrode niobium film is easily oxidized after the lower electrode is fabricated and before the upper electrode is fabricated.
- There was a problem that the situation worsened.
そこで、本発明の目的は、従来のこのような課題を解決
するため、下部電極ニオブ膜表面が酸化されに＜＜、電
極との超伝導コンタクトが良好に保てる超伝導コンタク
Ｉ・の作製方法を得ることとしている。Therefore, in order to solve these conventional problems, the purpose of the present invention is to provide a method for manufacturing a superconducting contact I that can maintain good superconducting contact with the electrode without oxidizing the surface of the niobium film of the lower electrode. I'm trying to get it.
Ｃ課題を解決するための手段〕
上記課題を解決するために、本発明は下部ニオブ（Ｎｂ
）電極（薄膜）と絶縁膜をはさんで対向する上部電極（
超伝導薄膜）間で、超伝導コンタクトを形成する方法に
おいて、コンタクト部分の上記下部電極表面に窒化ニオ
ブ（↑Ｊ ｂ １１ ）膜を形成する工程を追加し、下
部電極作製後、上部電極作製までの間においてニオブ膜
表面が酸化されに＜＜、上部電極との超伝導コンタクト
が良好保持能力向上を図れるようにした。Means for Solving Problem C] In order to solve the above problem, the present invention provides lower niobium (Nb
) Electrode (thin film) and upper electrode (thin film) facing each other with an insulating film in between
In the method of forming a superconducting contact between a superconducting thin film (a superconducting thin film), a step of forming a niobium nitride (↑J b 11 ) film on the surface of the lower electrode in the contact portion is added, and the process is performed from the lower electrode to the upper electrode. During this period, the surface of the niobium film is oxidized, so that the superconducting contact with the upper electrode can improve its retention ability.
上記のように形成された超伝導コンタクトにおいて、Ｎ
ｂＮ膜を通じて下部電極から上部電極へ電流が流れる。In the superconducting contact formed as described above, N
A current flows from the lower electrode to the upper electrode through the bN film.
以下に、この発明の実施例を図面に基ずいて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図において、本発明の超伝導コンタクトの概略図を
示す。Ｓｉ基板１（径４インチ、厚さ１ｍＭ）上に熱酸
化して５ｉＯｚ膜２ （１００ｎｍ）を作製する。この
ＳｉＯ２膜２上膜下上電極としてＮｂ１ｌ１３をスパッ
タ（ターケラ）；Ｎｂ）で、膜厚１１００ｎに作製する
。この下部電極Ｎｂ膜膜上上反応性スパッタ（ターケソ
ト；Ｎｈ、、Ｎ２中）でＮｂＮ−膜４を２ｎｍ成膜する
。ここで、この皮膜は他の窒化膜（ＴｉＮやΔＩＮ等）
であってもよい。In FIG. 1 a schematic diagram of a superconducting contact of the invention is shown. A 5iOz film 2 (100 nm) is fabricated on a Si substrate 1 (diameter 4 inches, thickness 1 mm) by thermal oxidation. A lower upper electrode on the SiO2 film 2 is formed by sputtering (Nb) with Nb1l13 to a thickness of 1100 nm. On this lower electrode Nb film, a 2 nm thick NbN- film 4 is formed by reactive sputtering (in Nh, N2). Here, this film can be replaced by other nitride films (TiN, ΔIN, etc.)
It may be.
このＮｂＮ膜４上の一部をマスクして、スパック（ター
ケラト ；Ａ１）で、絶縁膜へＩ２Ｏ３膜５を膜厚５０
ｎｍに作製する。このＡ１□０３膜５上に、上部電極と
してＮｂ膜６をスパッタ（ターケラト ； Ｎｂ）で、
膜厚１１００ｎに作製する。A part of this NbN film 4 is masked, and an I2O3 film 5 is deposited on the insulating film to a thickness of 50 mm using spacing (tarkerat; A1).
Fabricate to nm. On this A1□03 film 5, a Nb film 6 is sputtered (Turkerate; Nb) as an upper electrode.
The film is manufactured to a thickness of 1100 nm.
第２図は、５ＱＵＩＤ素子におけるジョセフソン接合に
ＮｂＮ膜を皮膜した例である。この素子は平面型ＤＣ−
３ＱＵＩＤ素子である。本発明の超伝導コンタクト法は
、ジョセフソン接合上部Ｎｂ膜９とＰｂ／Ｉｎ／Ａｕ−
次配線層１０間に適用されている。図１の上部電極、下
部電極は、各々ジョセフソン接合上部Ｎｂ膜９とＰｂ／
Ｉｎ／Ａｕ−次配線層１０に対応する。ＮｂＮ膜は、ジ
ョセフソン接合上部Ｎｂ膜９とＰｂ／Ｉｎ／＾Ｕ配線１
０間に作製され、ジョセフソン接合上部Ｎｂ膜９がＰｂ
／Ｉｎ／Ａυ配線１０間が作製される間酸化されるのを
防止し、両者間の超伝導コンタクトを良好に保持する。FIG. 2 shows an example in which a Josephson junction in a 5QUID element is coated with an NbN film. This element is a planar DC-
It is a 3QUID element. The superconducting contact method of the present invention connects the upper Nb film 9 of the Josephson junction to the Pb/In/Au-
It is applied between the next wiring layers 10. The upper electrode and lower electrode in FIG. 1 are a Josephson junction upper Nb film 9 and a Pb/
This corresponds to the In/Au-suborder wiring layer 10. The NbN film is connected to the Josephson junction upper Nb film 9 and the Pb/In/^U wiring 1.
The upper Nb film 9 of the Josephson junction is made of Pb
/In/Aυ wiring 10 is prevented from being oxidized during fabrication, and a superconducting contact between the two is maintained well.
本発明は、以上説明したように構成されているので、以
下に記載されるような効果を奏する。Since the present invention is configured as described above, it produces the effects described below.
下部電極」二に窒化ニオブ（ＮｂＮ）膜を有する構成に
することにより、下部電極ニオブ膜表面が酸化されに＜
＜、絶縁層をはさんだ上部電極との超伝導コンタクトが
良好に保持できるという効果がある。By adopting a structure in which the lower electrode has a niobium nitride (NbN) film, the surface of the lower electrode niobium film is prevented from being oxidized.
＜This has the effect that superconducting contact with the upper electrode sandwiching the insulating layer can be maintained well.
第１図は本発明の実施例の超伝導コンタクトの概略図、
第２図はこの超伝導コンタクトを応用した５ＱＵＩＤの
実施例を示す説明図、第３図は従来の超伝導コンタクト
の概略図である。
１ ・ ・
２ ・ ・
３ ・ ・
４ ・
５５“
６ ・
７ ・ ・
８ ・ ・
・Ｓｉ基板
・５ｉ０２膜
・下部電極Ｎｂ膜
・ＮｂＮ膜
・・・絶縁膜５１０２膜
上部電極Ｎｂ膜
・Ｎｂ膜（ジョセフソン接合下部膜）
・ＡｌＯｘ膜（ジョセフソン接合障壁層）９・・・Ｎｂ
膜（ジョセフソン接合上部膜）１０．１０’ −Ｐｂ／
Ｉｎ／Ａｕ配線層１１・・・ＳｉＯ膜（抵抗体保護膜）
１２・・・Ｍｏ膜（抵抗体）
以
上
出願人 セイコー電子工業株式会社
代理人 弁理士 林 敬 之 助FIG. 1 is a schematic diagram of a superconducting contact according to an embodiment of the present invention;
FIG. 2 is an explanatory diagram showing an example of a 5QUID to which this superconducting contact is applied, and FIG. 3 is a schematic diagram of a conventional superconducting contact. 1 ・ ・ 2 ・ ・ 3 ・ ・ 4 ・ 55" 6 ・ 7 ・ 8 ・ ・ ・Si substrate, 5i02 film, lower electrode Nb film, NbN film... Insulating film 5102 film Upper electrode Nb film, Nb film ( Josephson junction lower film) ・AlOx film (Josephson junction barrier layer) 9...Nb
Membrane (Josephson junction upper membrane) 10.10' -Pb/
In/Au wiring layer 11...SiO film (resistor protection film) 12...Mo film (resistor) Applicant Seiko Electronics Co., Ltd. Agent Patent attorney Keinosuke Hayashi
Claims (5)
んで対向する上部電極（超伝導薄膜）間で、超伝導コン
タクトを形成する方法において、コンタクト部分の前記
下部電極表面に窒化物の皮膜を形成した後に、前記上部
電極を形成することを特徴とする超伝導コンタクト作製
方法。(1) In a method for forming a superconducting contact between a lower niobium (Nb) electrode (thin film) and an upper electrode (superconducting thin film) facing each other with an insulating film in between, nitride is added to the surface of the lower electrode at the contact portion. A method for producing a superconducting contact, comprising forming the upper electrode after forming the film.
る請求項１記載の超伝導コンタクト作製方法。(2) The method for producing a superconducting contact according to claim 1, wherein the nitride film is a niobium nitride (NbN) film.
伝導コンタクト作製方法。(3) The method for producing a superconducting contact according to claim 1, wherein the upper electrode is a niobium film.
がニオブ（Ｎｂ）電極である請求項１記載の超伝導コン
タクト作製方法。(4) The superconducting contact manufacturing method according to claim 1, wherein the lower electrode is a superconducting thin film and the upper electrode is a niobium (Nb) electrode.
路。(5) A superconducting circuit using the method for producing a superconducting contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2106828A JPH045873A (en) | 1990-04-23 | 1990-04-23 | Manufacture of superconducting contact and superconducting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2106828A JPH045873A (en) | 1990-04-23 | 1990-04-23 | Manufacture of superconducting contact and superconducting circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH045873A true JPH045873A (en) | 1992-01-09 |
Family
ID=14443626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2106828A Pending JPH045873A (en) | 1990-04-23 | 1990-04-23 | Manufacture of superconducting contact and superconducting circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH045873A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06164151A (en) * | 1992-11-24 | 1994-06-10 | Kyocera Corp | Multilayer interconnection board |
| WO2008069700A1 (en) * | 2006-12-05 | 2008-06-12 | Institut Radiotekhniki I Elektroniki Rossiiskoi Akademii Nauk | A cryogenic local oscillator based on distributed tunnel junction for a submillimeter integrated receiver with a pll system |
| JP2012519379A (en) * | 2009-02-27 | 2012-08-23 | ディー−ウェイブ システムズ，インコーポレイテッド | System and method for manufacturing a superconducting integrated circuit |
| FR2984602A1 (en) * | 2012-04-27 | 2013-06-21 | Commissariat Energie Atomique | MULTILAYER ELECTRICAL CONNECTION DEVICE OF SUPERCONDUCTING MATERIALS BETWEEN TWO CIRCUITS |
| CN111933787A (en) * | 2020-08-20 | 2020-11-13 | 中国科学院上海微系统与信息技术研究所 | Superconducting connection channel and preparation method thereof |
-
1990
- 1990-04-23 JP JP2106828A patent/JPH045873A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06164151A (en) * | 1992-11-24 | 1994-06-10 | Kyocera Corp | Multilayer interconnection board |
| WO2008069700A1 (en) * | 2006-12-05 | 2008-06-12 | Institut Radiotekhniki I Elektroniki Rossiiskoi Akademii Nauk | A cryogenic local oscillator based on distributed tunnel junction for a submillimeter integrated receiver with a pll system |
| JP2012519379A (en) * | 2009-02-27 | 2012-08-23 | ディー−ウェイブ システムズ，インコーポレイテッド | System and method for manufacturing a superconducting integrated circuit |
| FR2984602A1 (en) * | 2012-04-27 | 2013-06-21 | Commissariat Energie Atomique | MULTILAYER ELECTRICAL CONNECTION DEVICE OF SUPERCONDUCTING MATERIALS BETWEEN TWO CIRCUITS |
| CN111933787A (en) * | 2020-08-20 | 2020-11-13 | 中国科学院上海微系统与信息技术研究所 | Superconducting connection channel and preparation method thereof |
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