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JPH04368006A - Oxide superconducting microwave component - Google Patents

Oxide superconducting microwave component

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Publication number
JPH04368006A
JPH04368006A JP3169157A JP16915791A JPH04368006A JP H04368006 A JPH04368006 A JP H04368006A JP 3169157 A JP3169157 A JP 3169157A JP 16915791 A JP16915791 A JP 16915791A JP H04368006 A JPH04368006 A JP H04368006A
Authority
JP
Japan
Prior art keywords
center conductor
oxide superconducting
gap
substrate
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3169157A
Other languages
Japanese (ja)
Inventor
Yasuhiro Nagai
靖浩 永井
Osamu Michigami
修 道上
Osamu Ishii
修 石井
Keiichiro Ito
圭一郎 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3169157A priority Critical patent/JPH04368006A/en
Publication of JPH04368006A publication Critical patent/JPH04368006A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To easily adjust and control a frequency or a delay time externally by controlling a gap between an upper board and an intermediate board with expansion/contraction of a piezoelectric lamination ceramics. CONSTITUTION:Ground planes 12a, 12b made of an oxide superconducting thin film are directed to the outside respectively and a prescribed gap 16 is provided between opposed faces and 1st and 2nd boards 13, 14 are opposed to each other, a center conductor 11 is formed to the side of the opposite face of the board 13, e.g. with the oxide superconducting material while leaving the gap 16 partly, and a piezo element 17 is provided to, e.g. the ground plane 12a of any board (e.g. the board 14). Then the gap 16 between the oxide superconducting boards 12a, 12b having a high dielectric constant is controlled by the piezoelectric lamination ceramics 17 to vary the effective dielectric constant in the vicinity of the center conductor 11, resulting that a phase speed and a group speed of a microwave propagating through the center conductor 11 are controlled.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、周波数制御あるいは遅
延時間制御が可能な酸化物超伝導薄膜を用いた酸化物超
伝導マイクロ波部品に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oxide superconducting microwave component using an oxide superconducting thin film capable of frequency control or delay time control.

【0002】0002

【従来の技術】従来、マイクロ波領域で使用される各種
フィルタ、共振器、遅延線等の受動部品は、無酸素銅や
金といった表面抵抗の低い常伝導金属が利用されていた
。マイクロ波部品で導体損失を支配する表面抵抗は、常
伝導金属では周波数の1/2乗に比例し、超伝導材料で
は周波数の2乗に比例して増大する。
2. Description of the Related Art Conventionally, passive components such as various filters, resonators, and delay lines used in the microwave region have been made of normal conductive metals with low surface resistance, such as oxygen-free copper and gold. Surface resistance, which dominates conductor loss in microwave components, increases in proportion to the 1/2 power of the frequency in normal conductive metals and in proportion to the square of the frequency in superconducting materials.

【0003】超伝導材料は数百GHz以下の領域で銅よ
り抵抗損失が少なく、低い周波数になるにつれ抵抗損失
は一層低減できる。しかし従来、ニオブ等のように極低
温で超伝導を発現する金属系超伝導材料は冷却などの問
題で一部の特殊な分野のみに限定して応用されていた。
[0003] Superconducting materials have less resistance loss than copper in the range of several hundred GHz or less, and the resistance loss can be further reduced as the frequency becomes lower. However, in the past, metal-based superconducting materials such as niobium that exhibit superconductivity at extremely low temperatures have been applied only to a few special fields due to problems such as cooling.

【0004】近年、ヨットリウム系、ビスマス系、タリ
ウム系といった酸化物超伝導材料が発見され、これらの
材料の薄膜化技術も大幅に進展しつつある。これにより
、従来の常伝導金属よりはるかに抵抗損失が少なく、低
い分散を利用した小形の超伝導マイクロ波部品が期待で
きると共に、77K動作が可能であることから、金属系
超伝導材料よりも冷却実装が容易になるという特徴があ
る。それ故、酸化物超伝導薄膜を利用したマイクロ波部
品の研究が勢力的に進められている。
[0004] In recent years, oxide superconducting materials such as yottrium-based, bismuth-based, and thallium-based materials have been discovered, and the technology for forming thin films of these materials is also making great progress. As a result, we can expect small superconducting microwave components that have much lower resistance loss than conventional normal metals and utilize low dispersion, and can operate at 77K, making them cooler than metallic superconducting materials. It has the characteristic of being easy to implement. Therefore, research into microwave components using oxide superconducting thin films is being actively pursued.

【0005】マイクロ波部品は基本的に中心導体とグラ
ンドプレーンから構成される。これらの基本的な構成を
第6図に示す。第6図(a)はマイクロトリップ型、第
6図(b)はストリップライン型である。第6図におい
て1は中心導体、2aは下部グランドプレーン、3は中
心導体1を含む中間基板、4は上部グランドプレーン2
bを含む上部基板、5は下部グランドプレーン2aを含
む下部基板、6は中間基板3と上部基板4との間の隙間
である。
Microwave components basically consist of a center conductor and a ground plane. Their basic configuration is shown in FIG. FIG. 6(a) shows a microtrip type, and FIG. 6(b) shows a stripline type. In FIG. 6, 1 is the center conductor, 2a is the lower ground plane, 3 is the intermediate board containing the center conductor 1, and 4 is the upper ground plane 2.
5 is a lower substrate including the lower ground plane 2a, and 6 is a gap between the intermediate substrate 3 and the upper substrate 4.

【0006】現在、MIC,MMIC等ではマイクロス
トリップ型が最も多く用いられており、放射損失や導体
損失を抑えるには中心導体1の回りをグランドプレーン
で囲みストリップライン型に近づける必要がある。この
ことは特に、低損失を利用した超伝導マイクロ波部品で
は重要となる。
Currently, the microstrip type is most commonly used in MICs, MMICs, etc., and in order to suppress radiation loss and conductor loss, it is necessary to surround the center conductor 1 with a ground plane to approximate the stripline type. This is particularly important for superconducting microwave components that utilize low loss.

【0007】グランドプレーンも超伝導材料で形成する
場合、良好な高周波特性を有する酸化物超伝導薄膜は現
在のところ基板の裏表に形成できないため、マイクロス
トリップ型で2枚、ストリップライン型で3枚の基板を
重ね合わせて構成することになる。今後、基板の裏表に
超伝導薄膜を形成できる技術が開発された場合、中心導
体1と下部グランドプレーン2aは同一基板上に形成で
きるものの、中心導体1はパターンニングする必要があ
るため、中心導体1を含む中間基板3と上部グランドプ
レーン2bを含む上部基板4とは別にならざるおえない
When the ground plane is also formed of a superconducting material, two layers are required for the microstrip type and three layers for the strip line type, since it is currently not possible to form an oxide superconducting thin film with good high frequency characteristics on the front and back surfaces of the substrate. It is constructed by overlapping two substrates. In the future, if a technology is developed that allows superconducting thin films to be formed on the front and back surfaces of a substrate, the center conductor 1 and the lower ground plane 2a can be formed on the same substrate, but the center conductor 1 will need to be patterned. 1 and the upper substrate 4 including the upper ground plane 2b must be separate.

【0008】[0008]

【発明が解決しようとする課題】従って、低損失な超伝
導デバイスに有利なストリップライン構造を酸化物超伝
導薄膜で構成する場合には、上部基板4と中間基板3の
隙間6を避けることはできない。通常、マイクロ波部品
用酸化物超伝導薄膜はMgO,LaAlO3基板上に形
成されるが、これらの誘電率はそれぞれ9、25と大き
い。そのため特に中間基板3と下部基板5との空気隙間
は中心導体近傍の実効誘電率を大きく変化させ、中心導
体を伝搬するマイクロ波の位相速度、郡速度を設計値か
らシフトさせるという問題があった。
[Problem to be Solved by the Invention] Therefore, when constructing a stripline structure advantageous for a low-loss superconducting device using an oxide superconducting thin film, it is necessary to avoid the gap 6 between the upper substrate 4 and the intermediate substrate 3. Can not. Generally, oxide superconducting thin films for microwave components are formed on MgO and LaAlO3 substrates, and the dielectric constants of these are as large as 9 and 25, respectively. Therefore, there was a problem in that the air gap between the intermediate substrate 3 and the lower substrate 5 in particular greatly changed the effective permittivity near the center conductor, causing the phase velocity and group velocity of the microwave propagating through the center conductor to shift from the designed values. .

【0009】第7図は代表的な酸化物超伝導受動デバイ
スの中心導体パターンを示す。第7図(a)は共振器、
(b)はチェビシェフ型帯域通過フィルタ、(c)は遅
延線であって、1は第6図と同様に中心導体を意味する
。これらの受動デバイスにおける実効誘電率変化による
位相速度、郡速度のシフトは、共振器では非常にシャー
プな共振ピークの周波数シフトを生じ、フィルタでは通
過帯域中心周波数のズレを生じるため、超伝導フィルタ
で有利な狭帯域通過特性を生かせない。
FIG. 7 shows the center conductor pattern of a typical oxide superconducting passive device. FIG. 7(a) shows a resonator,
(b) is a Chebyshev type band-pass filter, (c) is a delay line, and 1 means the center conductor as in FIG. 6. Shifts in phase velocity and group velocity due to changes in the effective dielectric constant in these passive devices cause a very sharp frequency shift of the resonance peak in a resonator, and a shift in the center frequency of the passband in a filter. The advantageous narrow band pass characteristics cannot be utilized.

【0010】また、遅延線では遅延時間が設計値よりず
れるという課題がある。このように超伝導マイクロ波部
品はその性質上、極めてシャープな周波数特性を有する
ことから、高Q共振器や超狭帯域フィルタへの適用が極
めて有用である。反面、設計した中心周波数へ調整する
ことは極めて煩雑で、しかも困難である。更に、超伝導
マイクロ波は臨海温度以上では表面抵抗が大きく十分な
マイクロ波特性が期待できないために、室温での調整は
ほとんど不可能である。
Another problem with the delay line is that the delay time deviates from the designed value. As described above, since superconducting microwave components have extremely sharp frequency characteristics by their nature, they are extremely useful for application to high-Q resonators and ultra-narrow band filters. On the other hand, adjusting to the designed center frequency is extremely complicated and difficult. Furthermore, since superconducting microwaves have a large surface resistance above the critical temperature and sufficient microwave characteristics cannot be expected, it is almost impossible to adjust them at room temperature.

【0011】それ故、超伝導マイクロ波部品においては
冷却した後でも調整が容易になる部品構造が強く望まれ
ていた。また、周波数をスイープさせたり、遅延時間に
変調をかけるといった位相情報のスイープ・変調も機能
性付加の点から強く望まれていた。
[0011]Therefore, in superconducting microwave components, there has been a strong desire for a component structure that allows easy adjustment even after cooling. Sweeping and modulating phase information, such as sweeping the frequency and modulating the delay time, was also strongly desired from the perspective of adding functionality.

【0012】本発明はこのような状況に鑑みてなされた
もので、ストリップライン構造における高い誘電率を有
した基板間の隙間をグランドプレーンの外側に設けた圧
電積層セラミックスにより制御することによって、周波
数あるいは遅延時間を外部より容易に調整・制御できる
高性能で、信頼性の高い、新しい機能性を有した装置を
提供することにある。
The present invention has been made in view of the above situation, and by controlling the gap between substrates having a high dielectric constant in a strip line structure using piezoelectric laminated ceramics provided outside the ground plane, the frequency can be increased. Another object of the present invention is to provide a high-performance, highly reliable device with new functionality that allows the delay time to be easily adjusted and controlled from the outside.

【0013】[0013]

【課題を解決するための手段】このような課題を解決す
るために本発明は、上部基板と中間基板の隙間を何らか
の方法で制御できれば、中心導体近傍の実効誘電率を任
意に変化させることができるので中心導体を伝搬するマ
イクロ波の位相速度、郡速度を外部より制御することが
可能になるという思想に基づくものである。具体的には
、導電材料で形成されたグランドプレーンをそれぞれ外
側に向けかつ対向面に所定の隙間を設けて配設した第1
および第2の基板と、一方の基板の対向面側に酸化物超
伝導材料によって前記隙間を一部残す状態で形成した中
心導体と、いずれかの基板のグランドプレーン側に設け
たピエゾ素子とで構成したものである。
[Means for Solving the Problems] In order to solve these problems, the present invention proposes that if the gap between the upper substrate and the intermediate substrate can be controlled in some way, the effective permittivity near the center conductor can be changed arbitrarily. This is based on the idea that the phase velocity and group velocity of the microwave propagating through the center conductor can be controlled from the outside. Specifically, first ground planes made of conductive material are arranged facing outward and with a predetermined gap between them on opposing surfaces.
and a second substrate, a center conductor formed with an oxide superconducting material on the opposing surface side of one substrate while leaving a portion of the gap, and a piezo element provided on the ground plane side of one of the substrates. It is composed of

【0014】[0014]

【作用】ストリップライン構造における高い誘電率を有
した酸化物超伝導基板間の隙間を圧電積層セラミックス
により制御することによって、中心導体近傍の実効誘電
率を変化させ、その結果として中心導体を伝搬するマイ
クロ波の位相速度、郡速度を制御することにより、酸化
物超伝導マイクロ波部品の周波数、あるいは遅延時間を
外部より容易に制御することを特徴とし、冷却した後で
も容易に調整・制御できる酸化物超伝導マイクロ波部品
に適した構造を実現している。
[Operation] By controlling the gap between oxide superconducting substrates with high dielectric constants in a stripline structure using piezoelectric laminated ceramics, the effective dielectric constant near the center conductor is changed, and as a result, propagation occurs through the center conductor. By controlling the phase velocity and group velocity of the microwave, the frequency or delay time of the oxide superconducting microwave component can be easily controlled from the outside, and the oxidation process can be easily adjusted and controlled even after cooling. A structure suitable for superconducting microwave components has been realized.

【0015】[0015]

【実施例】図1は本発明によるを適用した酸化物超伝導
マイクロ波デバイスの構造例である。図1において11
は酸化物超伝導薄膜による中心導体、12aは酸化物超
伝導薄膜による上部グランドプレーン、12bは酸化物
超伝導薄膜による下部グランドプレーン、13は中心導
体パターン11を含むMgOまたはLaAlO3等の結
晶中間基板、14は上部グランドプレーン12aを含む
単結晶上部基板、15は下部グランドプレーン12bを
含む単結晶下部基板、16は中間基板13と上部基板1
4との隙間、17は上部基板14の上端面と機械的に密
着させた圧電積層セラミックス素子、18aはピエゾ素
子の一つである圧電セラミックス素子17を機械的に支
持する面、18bは下部基板15を機械的に支持する面
である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an example of the structure of an oxide superconducting microwave device to which the present invention is applied. 11 in Figure 1
12a is an upper ground plane made of an oxide superconducting thin film, 12b is a lower ground plane made of an oxide superconducting thin film, and 13 is a crystal intermediate substrate of MgO or LaAlO3 containing the central conductor pattern 11. , 14 is a single crystal upper substrate including an upper ground plane 12a, 15 is a single crystal lower substrate including a lower ground plane 12b, and 16 is an intermediate substrate 13 and an upper substrate 1.
4, 17 is a piezoelectric laminated ceramic element mechanically brought into close contact with the upper end surface of the upper substrate 14, 18a is a surface that mechanically supports the piezoelectric ceramic element 17, which is one of the piezo elements, and 18b is a lower substrate. This is a surface that mechanically supports 15.

【0016】すなわち、本装置は酸化物超伝導薄膜で形
成されたグランドプレーン12a,12bをそれぞれ外
側に向けかつ対向面に所定の隙間16を設けて第1の基
板13および第2の基板14を対向させ、例えば基板1
3の対向面側に酸化物超伝導材料によって隙間16を一
部残す状態中心導体11を形成し、いずれかの基板(こ
の例では基板14)のグランドプレーン12a側に設け
たピエゾ素子17によって構成される。εsは上部基板
14と中間基板13との隙間(スペーシング)における
誘電率であって、この例では充填材料が空気であるから
その誘電率は1である。
That is, in this device, the first substrate 13 and the second substrate 14 are connected with the ground planes 12a and 12b formed of oxide superconducting thin films facing outward and with a predetermined gap 16 provided on the opposing surfaces. For example, the substrate 1
A center conductor 11 is formed with a gap 16 partially left on the opposing surface of the substrate 3, and a piezo element 17 is provided on the ground plane 12a side of one of the substrates (substrate 14 in this example). be done. εs is the dielectric constant in the gap (spacing) between the upper substrate 14 and the intermediate substrate 13, and in this example, since the filling material is air, the dielectric constant is 1.

【0017】中間基板13、下部基板15を誘電損失等
の損失を生じないように、接着剤あるいはバネ材等で下
部機械的支持面18aに固定する。一方、上部基板14
は圧電積層セラミックス17を介して上部機械的支持面
18bに固定する。上部基板14の重心Aは、圧電セラ
ミックス素子17に直流電圧を供給することにより、矢
印方向の変位が起こる。それにともないスペーシングは
最大0.5〜1.9μmの範囲で変化させることができ
る。
The intermediate substrate 13 and the lower substrate 15 are fixed to the lower mechanical support surface 18a with an adhesive or a spring material so as to prevent losses such as dielectric loss. On the other hand, the upper substrate 14
is fixed to the upper mechanical support surface 18b via the piezoelectric laminated ceramics 17. The center of gravity A of the upper substrate 14 is displaced in the direction of the arrow by supplying a DC voltage to the piezoelectric ceramic element 17. Accordingly, the spacing can be varied within a maximum range of 0.5 to 1.9 μm.

【0018】図2は圧電積層セラミックス素子17の変
位と電圧の関係を示す。a,bの素子はそれぞれ素子長
18,9mmのものである。0〜150Vの直流電圧で
、それぞれほぼ19,8μmの長さ方向の変位、即ちス
ペーシングを0.5〜19μmの範囲で制御できること
が図からわかる。
FIG. 2 shows the relationship between the displacement of the piezoelectric laminated ceramic element 17 and the voltage. The elements a and b have element lengths of 18 and 9 mm, respectively. It can be seen from the figure that with a DC voltage of 0 to 150 V, the longitudinal displacement, ie the spacing, of approximately 19.8 μm, respectively, can be controlled in the range of 0.5 to 19 μm.

【0019】図3は実効誘電率の変化率とスペーシング
の関係を計算機シミュレーションにより求めた例である
。基板には0.5mm厚さのMgO(εr=9.1)単
結晶基板、あるいは0.5mm厚さのLaAlO3(ε
r=25)単結晶基板を用い、中心導体幅は500,1
60μmであり、厚さは0.5μmで数値解析している
。隙間(スペーシング)は空気(εs=1)を想定し、
最大変位は8μmとしておりこれは図3の記号bの素子
に対応している。
FIG. 3 is an example of the relationship between the rate of change in effective dielectric constant and spacing obtained by computer simulation. The substrate is a 0.5 mm thick MgO (εr=9.1) single crystal substrate or a 0.5 mm thick LaAlO3 (εr
r=25) Using a single crystal substrate, the center conductor width is 500,1
The thickness is 60 μm, and the numerical analysis is performed using a thickness of 0.5 μm. The gap (spacing) assumes air (εs=1),
The maximum displacement is 8 μm, which corresponds to the element b in FIG.

【0020】中心導体幅500μmの場合、スペーシン
グ8μmまで広げたとき、MgOの基板で約−10%、
LaLlO3の基板で約−20%の実効誘電率変化を示
す。LaAlO3の基板で、中心導体幅を160μmま
で短くすると、誘電率変化は一層顕著になる。
When the center conductor width is 500 μm, when the spacing is expanded to 8 μm, the MgO substrate has a loss of about -10%,
A LaLlO3 substrate shows an effective dielectric constant change of about -20%. When the center conductor width is shortened to 160 μm in a LaAlO3 substrate, the change in dielectric constant becomes even more remarkable.

【0021】共振器、帯域通過型フィルタにおける共振
あるいは中心周波数は、中心導体付近の実効誘電率で大
きく変化する。また、遅延線における遅延時間も中心導
体を伝搬するマクロ波の郡速度(Vg)で決定され、こ
の際にも中心導体付近の実効誘電率で大きく変化する。 ストリップライン構造で隙間の無い場合、実効誘電率は
基板の誘電率εrで与えられるが、空気等の隙間が介在
する場合、実効誘電率εrは隙間の分だけ低下する。
The resonance or center frequency of a resonator or bandpass filter varies greatly depending on the effective dielectric constant near the center conductor. Further, the delay time in the delay line is also determined by the group velocity (Vg) of the macrowave propagating through the center conductor, and at this time also varies greatly depending on the effective dielectric constant near the center conductor. When there is no gap in the strip line structure, the effective dielectric constant is given by the dielectric constant εr of the substrate, but when there is a gap such as air, the effective permittivity εr decreases by the gap.

【0022】この誘電率の変化率(δεr/εr)は周
波数の変化率(δf/f)=−0.5×(δεr/εr
)の関係があり、また遅延線で重要となる郡速度の変化
率も同様に、(δVg/Vg)=−0.5×(δεr/
εr)の関係がある。例えば空気隙間等によって見かけ
上の誘電率変化率(δεr/εr)が−20%となると
、+10%の周波数シフト、あるいは+10%の郡速度
変化を招くことになる。
The rate of change in dielectric constant (δεr/εr) is calculated as the rate of change in frequency (δf/f)=−0.5×(δεr/εr
), and the rate of change in group speed, which is important in the delay line, is similarly expressed as (δVg/Vg)=-0.5×(δεr/
There is a relationship of εr). For example, if the apparent rate of change in dielectric constant (δεr/εr) becomes -20% due to air gaps, etc., this will result in a +10% frequency shift or a +10% change in group speed.

【0023】図2に示した記号bの圧電素子を用いるこ
とにより最大8μmの範囲でスペーシングを制御でき、
その結果MgO基板でほぼ−10%、LaLlO3基板
でほぼ−20%の実効誘電率変化を招く。従ってMgO
基板で約+5%、LaAlO3基板で約+10%の範囲
で位相速度、郡速度を制御できる。
By using the piezoelectric element with symbol b shown in FIG. 2, the spacing can be controlled within a maximum range of 8 μm.
As a result, the effective dielectric constant changes by approximately -10% in the MgO substrate and by approximately -20% in the LaLlO3 substrate. Therefore, MgO
The phase velocity and grouping velocity can be controlled within a range of approximately +5% for the substrate and approximately +10% for the LaAlO3 substrate.

【0024】超伝導による狭帯域通過型フィルタでは、
例えば中心周波数10GHz、通過帯域1000MHz
(1%)といった特性が要求され、この仕様が周波数調
整を大幅に困難にしているが、本発明によって調整・制
御を行えばMgOで±250MHz、LaAlO3で±
500MHzの調整が容易にできるため、冷却後の調整
を容易にできるのみならず、外部入力による周波数のス
イープ・変調も可能になる。
[0024] In the narrow band pass filter using superconductivity,
For example, center frequency 10GHz, passband 1000MHz
(1%), and this specification makes frequency adjustment significantly difficult, but if adjustment and control are performed using the present invention, MgO can achieve ±250MHz and LaAlO3 can achieve ±250MHz.
Since adjustment of 500 MHz can be easily performed, it is not only possible to easily adjust the frequency after cooling, but also to sweep and modulate the frequency by external input.

【0025】このことは共振器にもあてはまり、共振器
の場合には特に、温度変化による共振周波数のシフトが
問題であるが、本発明による構造で共振周波数を制御信
号とし、圧電積層セラミックスにフィードバック制御を
組み込むことによって、共振周波数の温度変化を抑制す
ることが可能である。
[0025] This also applies to resonators, and in the case of resonators, the shift of the resonant frequency due to temperature changes is a problem, but with the structure according to the present invention, the resonant frequency is used as a control signal and fed back to the piezoelectric laminated ceramics. By incorporating control, it is possible to suppress temperature changes in the resonant frequency.

【0026】一方、超伝導マイクロ波部品として有効な
遅延線においても、遅延時間をアナログ的に変化させる
ことは困難なため、スイッチングにより遅延線を切り換
え、遅延時間をステップ的に変化させている。本発明で
は郡速度をMgO基板で±2.5%、LaLlO3基板
で±5%制御できる。つまり、遅延時間をこの範囲で変
化させることが可能であり、遅延時間を制御信号とし、
圧電セラミックスにフィードバック系を組み込むことに
より、遅延時間に安定化あるいは前記範囲での可変遅延
線が可能になる。
On the other hand, even in a delay line that is effective as a superconducting microwave component, it is difficult to change the delay time in an analog manner, so the delay time is changed in steps by switching the delay line. In the present invention, the grouping speed can be controlled by ±2.5% with the MgO substrate and ±5% with the LaLlO3 substrate. In other words, it is possible to change the delay time within this range, and use the delay time as a control signal,
By incorporating a feedback system into piezoelectric ceramics, it is possible to stabilize the delay time or to create a variable delay line within the above range.

【0027】このような酸化物超伝導マイクロ波部品に
おける位相情報を制御信号とした基本的な制御ループの
概念図を図4に示す。(a)は周波数、遅延時間の調整
・安定化制御系であり、(b)はスイープ・変調の制御
系を示す。
FIG. 4 shows a conceptual diagram of a basic control loop using phase information as a control signal in such an oxide superconducting microwave component. (a) shows a frequency and delay time adjustment/stabilization control system, and (b) shows a sweep/modulation control system.

【0028】図5は特性インピーダンスとスペーシング
の関係を計算機シミュレーションしたものである。モデ
ル条件は図3と同一である。中心導体幅500μmの場
合には、スペーシングを8μmまで広げても1Ω以内に
納まるものの、160μm幅では4Ω近く変化する。し
かし、全体としてみれば、スペーシングを8μmまで広
げてもあまり大きな特性インピーダンス変化は招かない
。但し、これらは20Ω、30Ω系であり、フィルタ、
共振器の場合は問題ないが、遅延線の場合は50Ω系と
の変成器等を設ける必要がある。
FIG. 5 shows a computer simulation of the relationship between characteristic impedance and spacing. The model conditions are the same as in FIG. In the case of a center conductor width of 500 μm, even if the spacing is increased to 8 μm, the resistance remains within 1 Ω, but with a width of 160 μm, the resistance changes by nearly 4 Ω. However, overall, even if the spacing is increased to 8 μm, the characteristic impedance does not change significantly. However, these are 20Ω and 30Ω systems, and filters,
There is no problem in the case of a resonator, but in the case of a delay line, it is necessary to provide a transformer or the like to connect to the 50Ω system.

【0029】なお、以上の実施例ではグランドプレーン
も超伝導材料であるとして説明したが、超伝導材料の方
が特性が良くなるものの、特性の劣化を厭わなければ常
伝導材料であっても良い。
[0029] In the above embodiments, the ground plane was also explained as being made of superconducting material, but although superconducting material has better characteristics, it may be made of normal conducting material if it does not mind deteriorating the characteristics. .

【0030】[0030]

【発明の効果】以上説明したように本発明は、上部基板
と中間基板との隙間を圧電積層セラミックスの伸縮によ
って制御することによって、特性インピーダンスをあま
り変化させず、実効誘電率を10〜20%程度減少でき
る。従って中心導体を伝搬するマイクロ波の伝搬速度を
5〜10%変化させることが可能になる。つまり最大±
5%の範囲で中心周波数、遅延時間を調整・安定化でき
るのみならず、周波数、遅延時間を制御信号としてスペ
ーシングをフィードバック制御することにより、周波数
、遅延時間のスイープ・変調が可能になるといった特長
があり、その結果として冷却後でも調整が容易である。 また適切なフィードバック系を組むことによって周波数
スイープ・変調等の新しい機能を有した酸化物超伝導マ
イクロ波デバイスが可能になる。
Effects of the Invention As explained above, the present invention controls the gap between the upper substrate and the intermediate substrate by expanding and contracting the piezoelectric laminated ceramic, thereby reducing the effective dielectric constant by 10 to 20% without changing the characteristic impedance much. The degree can be reduced. Therefore, it becomes possible to change the propagation speed of microwaves propagating through the center conductor by 5 to 10%. In other words, maximum ±
Not only can the center frequency and delay time be adjusted and stabilized within a range of 5%, but by feedback controlling the spacing using the frequency and delay time as a control signal, it is possible to sweep and modulate the frequency and delay time. As a result, it is easy to adjust even after cooling. Furthermore, by constructing an appropriate feedback system, it becomes possible to create oxide superconducting microwave devices with new functions such as frequency sweep and modulation.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明による酸化物超伝導マイクロ波デバイス
FIG. 1: Oxide superconducting microwave device according to the present invention

【図2】圧電セラミックスにおける変位と電圧の関係を
示す図
[Figure 2] Diagram showing the relationship between displacement and voltage in piezoelectric ceramics

【図3】実効誘電率の変化率とスペーシングの関係を示
す図
[Figure 3] Diagram showing the relationship between the rate of change in effective permittivity and spacing

【図4】基本的な制御ループの概念図[Figure 4] Conceptual diagram of basic control loop

【図5】特性インピーダンスとスペーシングの関係を示
す図
[Figure 5] Diagram showing the relationship between characteristic impedance and spacing

【図6】マイクロ波部品の構造例を示す図[Figure 6] Diagram showing an example of the structure of microwave components

【図7】典型
的なマイクロ波部品の中心導体パターンを示す図
[Figure 7] Diagram showing the center conductor pattern of a typical microwave component

【符号の説明】[Explanation of symbols]

1  中心導体 2  グランドプレーン 3  中間基板 4  上部基板 5  下部基板 6  隙間 7  圧電積層セラミックス 8  支持面 1 Center conductor 2 Ground plane 3 Intermediate board 4 Upper board 5 Lower board 6 Gap 7 Piezoelectric laminated ceramics 8 Support surface

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  導電材料で形成されたグランドプレー
ンをそれぞれ外側に向けかつ対向面に所定の隙間を設け
て配設した第1および第2の基板と、一方の基板の対向
面側に酸化物超伝導材料によって前記隙間を一部残す状
態で形成した中心導体と、前記いずれかの基板のグラン
ドプレーン側に設けたピエゾ素子とから構成される酸化
物超伝導マイクロ波部品。
1. First and second substrates each having a ground plane formed of a conductive material facing outward and with a predetermined gap provided on opposing surfaces; An oxide superconducting microwave component comprising a center conductor formed of a superconducting material with a portion of the gap remaining, and a piezo element provided on the ground plane side of any of the substrates.
【請求項2】  請求項1において、周波数,位相速度
,郡速度,遅延時間等の位相情報を制御信号とし、その
制御信号と基準設定信号との差分を圧電積層セラミック
スにフィードバックする制御手段を設けたことを特徴と
するマイクロ波部品。
2. In claim 1, a control means is provided which uses phase information such as frequency, phase velocity, group velocity, delay time, etc. as a control signal and feeds back a difference between the control signal and a reference setting signal to the piezoelectric laminated ceramic. Microwave parts characterized by:
JP3169157A 1991-06-14 1991-06-14 Oxide superconducting microwave component Pending JPH04368006A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3169157A JPH04368006A (en) 1991-06-14 1991-06-14 Oxide superconducting microwave component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3169157A JPH04368006A (en) 1991-06-14 1991-06-14 Oxide superconducting microwave component

Publications (1)

Publication Number Publication Date
JPH04368006A true JPH04368006A (en) 1992-12-21

Family

ID=15881343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3169157A Pending JPH04368006A (en) 1991-06-14 1991-06-14 Oxide superconducting microwave component

Country Status (1)

Country Link
JP (1) JPH04368006A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995035584A1 (en) * 1994-06-17 1995-12-28 Matsushita Electric Industrial Co., Ltd. High-frequency circuit element
WO2001041251A1 (en) * 1999-12-01 2001-06-07 E.I. Du Pont De Nemours And Company Tunable high temperature superconducting filter
JP2002064312A (en) * 2000-08-23 2002-02-28 Japan Science & Technology Corp Electromagnetic wave element
JP2002141706A (en) * 2000-10-31 2002-05-17 Toshiba Corp High frequency devices
JP2002141705A (en) * 2000-10-30 2002-05-17 Toshiba Corp High frequency devices
JP2002204102A (en) * 2000-10-31 2002-07-19 Toshiba Corp High frequency device and high frequency device
KR100362849B1 (en) * 1995-06-13 2003-04-26 텔레폰아크티에볼라게트 엘엠 에릭슨 Apparatus and method related to tunable device
US6778042B2 (en) 2000-10-30 2004-08-17 Kabushiki Kaisha Toshiba High-frequency device
EP1653552A1 (en) * 2004-10-29 2006-05-03 Siemens Mobile Communications S.p.A. A microstrip resonator tunable filter and related tuning method
DE102006053472A1 (en) * 2006-11-14 2008-05-15 Bruker Biospin Ag Radio frequency (RF) resonator system for magnetic resonance probe head, has RF resonator in which capacitive element region of its conductor is coated with dielectric layer

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6016434A (en) * 1994-06-17 2000-01-18 Matsushita Electric Industrial Co., Ltd. High-frequency circuit element in which a resonator and input/ouputs are relatively movable
US6360112B1 (en) 1994-06-17 2002-03-19 Matsushita Electric Industrial Co., Ltd. High-frequency circuit element having a superconductive resonator tuned by another movable resonator
US6360111B1 (en) 1994-06-17 2002-03-19 Matsushita Electric Industrial Co., Ltd. High-frequency circuit element having a superconductive resonator with an electroconductive film about the periphery
WO1995035584A1 (en) * 1994-06-17 1995-12-28 Matsushita Electric Industrial Co., Ltd. High-frequency circuit element
KR100362849B1 (en) * 1995-06-13 2003-04-26 텔레폰아크티에볼라게트 엘엠 에릭슨 Apparatus and method related to tunable device
US6522217B1 (en) 1999-12-01 2003-02-18 E. I. Du Pont De Nemours And Company Tunable high temperature superconducting filter
WO2001041251A1 (en) * 1999-12-01 2001-06-07 E.I. Du Pont De Nemours And Company Tunable high temperature superconducting filter
JP2003516079A (en) * 1999-12-01 2003-05-07 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Tunable high temperature superconducting filter
JP2002064312A (en) * 2000-08-23 2002-02-28 Japan Science & Technology Corp Electromagnetic wave element
US6778042B2 (en) 2000-10-30 2004-08-17 Kabushiki Kaisha Toshiba High-frequency device
JP2002141705A (en) * 2000-10-30 2002-05-17 Toshiba Corp High frequency devices
US6937117B2 (en) 2000-10-30 2005-08-30 Kabushiki Kaisha Toshiba High-frequency device
JP2002204102A (en) * 2000-10-31 2002-07-19 Toshiba Corp High frequency device and high frequency device
JP2002141706A (en) * 2000-10-31 2002-05-17 Toshiba Corp High frequency devices
EP1653552A1 (en) * 2004-10-29 2006-05-03 Siemens Mobile Communications S.p.A. A microstrip resonator tunable filter and related tuning method
DE102006053472A1 (en) * 2006-11-14 2008-05-15 Bruker Biospin Ag Radio frequency (RF) resonator system for magnetic resonance probe head, has RF resonator in which capacitive element region of its conductor is coated with dielectric layer
EP1923712A1 (en) 2006-11-14 2008-05-21 Bruker BioSpin AG HF resonator system and method for adjusting an HF resonator system
US7564244B2 (en) 2006-11-14 2009-07-21 Bruker Biospin Ag RF resonator system and method for tuning an RF resonator system
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