JPH0434961A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To suppress the mixing of impurities into a semiconductor thin film and to realize an integrated structure by forming the semiconductor thin film on a heat resisting substrate, forming a matrix on the film, and thereafter peeling the heat resisting substrate from the semiconductor thin film. CONSTITUTION:A peeling layer 4 is provided on a heat resisting substrate 1. For example, a P-type polycrystalline silicon thin film is formed on the layer 4 as a semiconductor thin film 2. The film 2 is covered with a cap layer 5. After the semiconductor thin film 2 undergoes zone melting and recrystallization, the cap layer 5 is removed, and a p<+> diffused layer 7 and an oxide film 8 are formed. Then, the oxide film 8 is patterned, and an opening part 9 is provided. A metal layer 10 is formed thereon, and a matrix 3 is bonded. Then, the peeling layer 4 is decomposed, and the heat resisting substrate 1 is separated. A bonding layer 11 is provided on the surface of the semiconductor thin film 2 by n<+> diffusion and the like, and a P-N junction is formed. Lattice electrodes 12 are further provided on the surface. Since the entire surface is covered with the peeling layer 4 and the cap layer 5, contamination with impurities in the melting recrystallization of the semiconductor thin film 2 is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a functional element using a semiconductor thin film and a manufacturing technique thereof.

[Conventional technology]

Conventional techniques related to functional elements using semiconductor thin films.

The technique will be explained below with an example.

For example, FIG. 13 is a schematic cross-sectional view sequentially showing the structure of an example of a semiconductor device using a conventional semiconductor thin film according to its manufacturing process. In the figure, 1 is a heat-resistant substrate, 108 is a diffusion prevention layer, 2 is a semiconductor thin film, 5 is a cap layer, 1) is a pn junction layer provided on the surface of the semiconductor thin film 2, and 12 is a grid electrode.

For example, silicon, high melting point metal, graphite, conductive ceramics, etc. are used for the heat-resistant substrate 1 (13th
Figure (a)). A diffusion prevention layer 108 made of a silicon oxide film is formed on this surface (FIG. 13(b)). Next, by a method such as photolithography, a part of the diffusion prevention layer 108 is removed to form an opening 109 (FIG. 13 (C1)), and a semiconductor material gas such as silane, dichlorosilane, trichlorosilane, etc. is applied thereon. A semiconductor thin film 2 is formed by a method such as decomposition (FIG. 13(d)), and is further covered with a cap layer 5 made of a silicon oxide film (FIG. 13(e)). After heating the semiconductor thin film 2 from above the cap layer 5 to melt and recrystallize it (FIG. 13(f)), the cap layer is removed by etching (FIG. 13 (along)). A bonding layer 1) is formed on the surface by growth of a microcrystalline film or diffusion of impurities, etc., and a transparent conductive film (not shown) is formed as necessary.
is provided, and a grid electrode 12 is further provided to complete the semiconductor device (FIG. 13(h)).

When the semiconductor device thus obtained is irradiated with light from the direction shown by the arrow 13 in FIG. 13(h), the light is absorbed inside the semiconductor device, and the semiconductor thin film 2 An electromotive force is generated in the film thickness direction, and current can be extracted.

The current is extracted from the heat-resistant substrate 1 through the grid electrode 12 on the one hand and through the opening 109 provided in the anti-diffusion layer 108 on the other hand. Figure 14 shows 20th IEEE
Photovoltaic 5specialists
This is the structure of a semiconductor device announced at a conference, in which polycrystalline silicon is used as the heat-resistant substrate 1 and silicon is used as the material of the semiconductor thin film 2.

However, in the method for manufacturing a semiconductor device as described above, when forming the semiconductor thin film 2 on the diffusion prevention layer 10B and when melting and recrystallizing the semiconductor thin film 2,
Because the process is carried out at high temperatures, the heat-resistant substrate is exposed to harmful F e % that degrades its characteristics as a semiconductor device.
If impurities such as N t % Cr are contained, these impurities will diffuse into the semiconductor thin film 2 through the opening 109 provided in the diffusion prevention layer 108 and deteriorate the performance of the semiconductor device. There was a problem. moreover,
In the semiconductor device having the above structure, electrical contact is made between the semiconductor thin film 2 and the heat-resistant substrate 1 through the opening 109 provided in the diffusion prevention layer 108. Since a conductive material is used and the whole is used as an electrode, the semiconductor thin film 2 provided on this is divided into multiple regions and is electrically connected to each other, i.e., an integrated structure. The structure was difficult to realize.

Further, FIG. 15 is a cross-sectional view showing the concept of the structure of another example of a conventionally proposed semiconductor device.In FIG. 15, 101 is a silicon substrate;
01 is an integrated circuit region formed on 2, 2 is a semiconductor thin film, 1 is
) 9 is an integrated circuit area provided on the semiconductor thin film 2; 12
0 represents an insulating film between the eyebrows, and 121 represents interconnection wiring.

An integrated circuit region 1) 8 is formed on the surface of the silicon substrate 101, with a glabella insulating film 120 sandwiched thereover.
Two layers of semiconductor thin films 2 are provided, and integrated circuit regions 1) 9 are formed on each semiconductor thin film 2. The integrated circuit 1) 8 on the silicon substrate 101 and the integrated circuit 1) 9 on the semiconductor thin film 2 are electrically connected to each other by interconnection wiring 121, and each integrated circuit performs one function as a whole. It has become a semiconductor device that fulfills the following requirements.

To construct the above structure, first, an integrated circuit region 1) 8 is formed on a silicon substrate 101, an interlayer insulating layer 120 and a semiconductor thin film 2 are sequentially provided on it, and an integrated circuit is formed thereon. , a manufacturing method is used in which the integrated circuit area 1) 8, 1) 9 of the lower layer and the interconnection wiring 121 are formed. The semiconductor thin film 2 used in a semiconductor device having such a structure is usually made of polycrystalline silicon or polycrystalline silicon melted and recrystallized. Considering the electrical characteristics of a semiconductor thin film, it is preferable to melt and recrystallize polycrystalline silicon to enlarge the single crystal region, rather than using polycrystalline silicon as it is. However, in a semiconductor device having the above structure, when a manufacturing method is used in which semiconductor thin films 2 are sequentially laminated on a silicon substrate on which an integrated circuit region 1) 8 is formed, as described above, In order to protect the functions of the formed integrated circuit, it is necessary to avoid exposing the integrated circuit region once formed to temperatures of 800 to 900° C. or higher during the manufacturing process. On the other hand, in order to melt and recrystallize the semiconductor thin film 2, since silicon melts at 1414°C, it is necessary to expose the semiconductor thin film 2 to a temperature higher than this temperature, which is inconsistent with the above requirement. Therefore, it has been difficult to realize such a semiconductor device.

In order to solve this problem, the semiconductor thin film 2 is irradiated with a laser beam or an electron beam, and it is locally heated to melt and recrystallize it, thereby reducing the effect on the already formed integrated circuit area. Attempts have been made to realize a semiconductor device. For example, FIG.
This is an example of a semiconductor device published in ical Digest (1981). In the figure, 101 is a p-type silicon substrate, 130 is an n-type diffusion region formed in the silicon substrate 101, 131 is a silicon oxide film, 132 is a first polycrystalline silicon layer, and 133 is a second polycrystalline silicon layer. . The second polycrystalline silicon layer 133 corresponds to the semiconductor thin film 2 in FIG. 131 is the 15th
This corresponds to the glabellar insulating layer 120 in the figure. Further, the contact portion between the second polycrystalline silicon layer 133 and the n-type diffusion region 130 corresponds to the interconnection wiring 121 in FIG. 15.

In this example, a first polycrystalline silicon layer 132, two n-type diffusion regions 130 and a p-type silicon substrate 101
constitutes one circuit element that is a component of an integrated circuit, and the first polycrystalline silicon layer 132 and the second polycrystalline silicon layer 133 directly above it constitute another circuit element. , which are electrically connected to each other to form an integrated circuit. Laser beam irradiation is used to melt and recrystallize the semiconductor thin film, that is, the second polycrystalline silicon layer 133. In this way, for example, by employing laser beam irradiation, a semiconductor device with a complicated structure as shown in FIG. is being realized. However, in such a manufacturing method, it is difficult to obtain a single crystal region over a wide area of the semiconductor thin film 2 obtained by recrystallization by laser beam irradiation, so there is a large-scale complex structure on the semiconductor thin film 2. It is not possible to form integrated circuits. In addition, it takes a long time to irradiate a large area with a laser beam, resulting in poor productivity.

[Problem to be solved by the invention]

Conventional semiconductor devices and their manufacturing methods are configured as described above, making it difficult to suppress the incorporation of impurities into semiconductor thin films, difficult to realize an integrated structure, and difficult to increase the area. There were problems such as poor productivity.

The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a semiconductor device and a manufacturing method thereof that can solve all of the above-mentioned problems.

[Means to solve the problem]

The method for manufacturing a semiconductor device according to the present invention is to form a semiconductor thin film on a heat-resistant substrate, form a matrix on the semiconductor thin film, and then peel the heat-resistant substrate from the semiconductor thin film.

Further, the semiconductor device according to the present invention is one in which a semiconductor thin film is formed on a base body by the method for manufacturing a semiconductor device according to the present invention.

[Effect]

In the method for manufacturing a semiconductor device according to the present invention, a semiconductor thin film is once formed on a heat-resistant substrate, and then this semiconductor thin film is transferred onto a base material.

Further, the semiconductor device according to the present invention is constructed by transferring a semiconductor thin film, which is first formed on a heat-resistant substrate, onto a base body of the semiconductor device.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
The figures are schematic cross-sectional views for sequentially explaining the method for manufacturing a semiconductor device according to the first embodiment of the present invention according to the manufacturing steps. In Figure 6, 1 is a heat-resistant substrate, 2 is a semiconductor thin film, and 3 is a semiconductor It is the mother body of the device.

The heat-resistant substrate 1 (FIG. 1(a)) must be such that its shape and composition do not change at the temperature required to form the semiconductor thin film 2.
If polycrystalline silicon is used, the heat-resistant substrate 1 needs to be heat resistant to temperatures from 600° C. to about 1200° C. in order to form it by decomposing a semiconductor material gas. Further, when the semiconductor thin film 2 is made of amorphous silicon, any material that can withstand a temperature of about 300°C is sufficient.In the former case, the material of the heat-resistant substrate 1 that satisfies this requirement is, for example, quartz, carbon, Silicon, ceramics, high melting point metals, etc. can be used, and in the latter case, metals such as glass, stainless steel, heat-resistant resins, etc. can be used.

A semiconductor thin film 2 is formed on the surface of this heat-resistant substrate 1 by, for example, decomposition of a semiconductor material gas (see FIG.
b)) If necessary, this semiconductor thin film 2 is subjected to necessary treatments for applying it to a semiconductor device to be constructed using it, such as patterning, oxidation, impurity diffusion, annealing, recrystallization, epitaxial growth, A base body 3 of a semiconductor device to be constructed using the semiconductor thin film 2 is bonded onto the semiconductor thin film 2, which is subjected to processes such as lamination of other thin films and patterning thereof (FIG. 1(C)). For bonding, the base body 3 may be directly bonded to the semiconductor thin film 2, or a bonding agent may be used, or the bonding agent itself may be used as the base body 3. , direct bonding is possible if the adhesion to the semiconductor thin film 2 is sufficient.

For example, when the bonding agent itself is used as the matrix 3,
In the process of forming the semiconductor thin film 2, depending on the treatment applied to the semiconductor thin film 2, a material with high adhesion to the base material may be placed on the surface, or the surface of the semiconductor thin film 2 may have a surface shape that has high adhesion to the base material. This is the case, for example, when an integrated circuit is formed on the surface of the semiconductor thin film 2, resulting in unevenness. The surface of the semiconductor thin film 2 may be intentionally treated to improve adhesion to the matrix 3. Examples of bonding agents include organic substances such as polyimide resin, low-melting glass, phosphorus, and boron. A silicon oxide film or the like can be used.

After that, the heat-resistant substrate 1 is peeled off from the semiconductor thin film 2 (FIG. 1(d)).For example, when the heat-resistant substrate 1 is made of a porous material such as porous ceramics, the heat-resistant substrate 1
A substance that dissolves the semiconductor thin film 2, that is, an etching liquid or an etching gas, is infiltrated into the interior of the semiconductor thin film 2, and the portion of the semiconductor thin film that is in contact with the heat-resistant substrate 1 is partially dissolved, thereby forming the heat-resistant substrate 1 and the semiconductor thin film 2. By removing the bond of
The heat-resistant substrate 1 can be peeled off from the semiconductor thin film 2.

For example, when the semiconductor thin film 2 is made of polycrystalline silicon, the etching solution may be a mixture of HF, HNO, CH, COOH, etc., and the etching gas may be CIFl or the like. As a result, a semiconductor device having a structure in which the semiconductor thin film 2 is disposed on the base body 3 is formed.

2 and 3 show second and third embodiments of the present invention in which a peeling layer 4 is previously provided on the surface of the heat-resistant substrate 1 before the semiconductor thin film 2 is formed. A release layer 4 is provided on at least a part of the surface of the heat-resistant substrate 1 (see FIG. 2(a)
), Fig. 3(a)), on which the semiconductor thin film 2 is formed (see Fig. 3)), and the base body 3 is bonded to this (Fig. 3(a))).
(C), FIG. 3(C)) is the same as shown in FIG.

In the second embodiment shown in FIG. 2, a heat-resistant substrate 1 is used as a semiconductor thin film 2
In the step of peeling from the semiconductor thin film 2, the peeling layer 4 provided between the heat-resistant substrate 1 and the semiconductor thin film 2 is chemically decomposed and removed using a solvent, and the heat-resistant substrate 1 is peeled from the semiconductor thin film 2. There is. If the solvent sufficiently penetrates into the gap between the semiconductor thin film 2 and the heat-resistant substrate 1, that is, the portion occupied by the peeling layer 4, the heat-resistant substrate 1 may be airtight.
When the semiconductor thin film 2 has a large area, a porous heat-resistant substrate 1 is used. For example, when the semiconductor thin film 2 is made of polycrystalline silicon, the release layer 4 is a silicon oxide film,
Porous ceramics or the like can be used as the heat-resistant substrate 1. As the porous ceramic, porous alumina or the like is used, for example. At this time, the solvent for the release layer 4 is HF.
can be used. When a porous material is used for the heat-resistant substrate 1, it may not be possible to obtain a surface with sufficient flatness depending on the material. For example, when using a silicon oxide film as the release layer 4, an oxide film doped with phosphorus or boron is used.
A flat surface is obtained by reflowing.

In the third embodiment shown in FIG. 3, a heat-resistant substrate 1 is used as a semiconductor thin film 2
In the step of peeling from the semiconductor thin film 2, the peeling layer 4 provided between the heat-resistant substrate 1 and the semiconductor thin film 2 is physically decomposed by mechanical stress, and the heat-resistant substrate 1 is peeled from the semiconductor thin film 2. There is. For example, if a layer formed by coating powder of silicon, silicon nitride, silicon oxide film, silicon carbide, boron nitride, etc. is used as the release layer 4,
Since the bond between the semiconductor thin film 2 and the heat-resistant substrate 1 is based on the weak bond between the particles of these powders, in this case,
By applying mechanical stress to peel the heat-resistant substrate 1 from the semiconductor thin film 2, it is possible to easily decompose the peeling layer 4 and separate the heat-resistant substrate 1 and the semiconductor thin film 2 (see FIG. 3). d)) Alternatively, the release layer 4 may be a layer formed by applying powder and covered with, for example, a silicon oxide film.

Further, FIG. 4 shows a fourth embodiment of the present invention in which, in the process of forming the semiconductor thin film 2 on the heat-resistant substrate 1, the semiconductor thin film 2 once formed is melted and recrystallized. For example, a heat-resistant substrate 1 made of porous alumina, etc.
A peeling layer 4 made of a silicon oxide film is provided on the surface of the silicon oxide film by a vapor phase method (FIG. 4(a)), a polycrystalline silicon film is formed thereon as a semiconductor thin film 2 by a vapor phase method, and this is again vapor-phased. A cap layer 5 made of a silicon oxide film is formed by a phase method.
(FIG. 4(b)), and a silicon nitride film may be further provided thereon. Next, the semiconductor thin film 2 is heated and melted, and then fixed and recrystallized. ), the cap layer 5 is removed and the base body 3 is bonded to the semiconductor thin film 2 (FIG. 4(d)), HF is infiltrated into the heat-resistant substrate 1 to dissolve and dissolve the silicon oxide film of the peeling layer 4, To peel off the heat-resistant substrate 1 (FIG. 4(e)) and to heat and melt the semiconductor thin film 2,
Even if energy beams such as lasers and electron beams are used,
Linear irradiation of infrared rays, which may be performed using infrared irradiation or heating with a carbon heater, etc. 1. Alternatively, zone melting recrystallization may be performed in which a band-shaped melted portion is created in the semiconductor thin film 2 using a linear carbon heater or the like and the band is moved.In addition, in the above example, both the release layer 4 and the cap layer 5 are silicon Although the case is shown in which the cap layer 5 is made of an oxide film, the cap layer 5
When using HF to remove the heat-resistant substrate 1, the surface of the heat-resistant substrate 1 is covered with a protective material so that the HF does not penetrate into the heat-resistant substrate 1 so that the release layer 4 is not removed at the same time.

FIG. 5 shows a fifth embodiment of the present invention, which is similar to the fourth embodiment shown in FIG.
In the step of forming the semiconductor thin film 2, the semiconductor crystal 6 is arranged adjacently so that the heat-resistant substrate 1 and its surface are on the same plane (FIG. 5(a)).
A semiconductor thin film 2 is formed on both (FIG. 5(b)).
, the semiconductor crystal 6 is made of the same material as the semiconductor thin film 2. For example, when the semiconductor thin film 2 is polycrystalline silicon, the semiconductor crystal 6 is made of silicon single crystal. When melting and recrystallizing, the semiconductor thin film 2 on the semiconductor crystal 6 is first melted by heating, and the heated portion is moved to sequentially melt the semiconductor thin film 2 on the heat-resistant substrate 1 from the end. , solidify in order from the upper part of the semiconductor crystal 6 to the upper part of the heat-resistant substrate 1. Through this operation, the semiconductor thin film 2 on the semiconductor crystal 6 is drawn into the crystal orientation of the semiconductor crystal 6 and tries to solidify with the same crystal orientation, and the semiconductor thin film 2 on the heat-resistant substrate 1 has already been It is drawn into the portion of the semiconductor thin film 2 that has solidified in the same crystal orientation as the semiconductor crystal 6, and attempts to solidify in the same crystal orientation. As a result, many parts of the recrystallized semiconductor thin film 2 are solidified in the same crystal orientation as the semiconductor crystal 6, and a semiconductor thin film 2 having a single crystal region over a wide area is obtained. Furthermore, the advantage of performing zone melting recrystallization is that if the semiconductor thin film 2 contains impurities, the impurities with a small segregation number will be swept away by the movement of the molten part and purified at the same time as the recrystallization. This is the point at which The subsequent process is similar to that shown in FIG. 4, in which the base body 3 is bonded to the semiconductor thin film 2 (FIG. 5(d)).
, the peeling layer 4 is disassembled to separate the heat-resistant substrate 1 (see FIG. 5).
e)), and further, the semiconductor crystal 6 is separated (FIG. 5(e)).
)).

FIG. 6 is a schematic cross-sectional view for sequentially explaining a sixth embodiment of the present invention in which the method for manufacturing a semiconductor device according to the present invention shown above is applied to an actual semiconductor device according to the manufacturing process. It is a diagram. Heat-resistant substrate 1 (Fig. 6(a)
) A peeling layer 4 is provided on the semiconductor thin film 2 (FIG. 6(b)).
For example, a p-type crystalline silicon thin film is formed thereon (FIG. 6C), and this is covered with a cap layer 5 (FIG.
Figure (d)). After zone melting recrystallization of the semiconductor thin film 2 (FIG. 6(el)), the camp layer 5 is removed.
)), a p diffusion layer 7 and an oxide film 8 are formed on the surface of the semiconductor m film 2.
(Fig. 6 (along)) Next, the oxide film 8 is buttered to form an opening 9 in a part (Fig. 6 (h)), and sputtering of aluminum, silver, etc. or vacuum A metal layer 10 is formed by vapor deposition or the like (FIG. 6(1)), and the base body 3 is bonded thereon (FIG. 6(J)). Subsequently, the peeling layer 4 is decomposed to separate the heat-resistant substrate 1, and as shown in FIG. forming a junction and further
When the semiconductor device thus obtained is irradiated with light from the direction shown by the arrow 13 in FIG. 6(1), the light is absorbed inside the semiconductor device. An electromotive force is generated in the thickness direction of the semiconductor thin film 2 by the pn junction provided in the semiconductor device, and current can be taken out. The current is extracted from the metal layer 10 through the grid conductor Fi 12 on the one hand and through the opening 9 provided in the oxide film 8 on the other hand. Furthermore, the metal layer 1° allows the incident light to reach the semiconductor device Wl! If the light is not absorbed sufficiently after passing through the semiconductor thin film 2 once, it is reflected and made to enter the semiconductor thin film 2 again. According to this method, since the semiconductor thin film 2 is melted and recrystallized with its entire surface covered by the peeling layer 4 and the camp layer 5, contamination by impurities during heating and melting can be prevented. can.

Further, FIG. 7 shows a semiconductor device according to a seventh embodiment of the present invention similar to that shown in FIG. 6 in order according to its manufacturing process. is the 6th
It is the same as FIG. 6(a) to FIG. 6(f). In FIG. 7, a bonding layer 1) is first formed on the surface of the semiconductor thin film 2, a grid electrode 12 is provided (FIG. 7(g)), and a transparent matrix 3 is bonded to this. (hl), then the peeling layer 4 is decomposed to separate the heat-resistant substrate 1 (Fig. 7 (1)), the metal N1
0 as a back electrode (Fig. 7 01), in this case,
Light is irradiated from the transparent matrix 3 side as shown by arrow 13.

In the embodiment shown above, a semiconductor device was shown in which the semiconductor thin film 2 was used without patterning, but the semiconductor Eil! 2 may be used by dividing it into regions of appropriate size, and FIG. 8 shows an eighth embodiment of the present invention in this manner. The steps from FIG. 8 (al to FIG. 8 (fl) are the same as those shown in FIG. 6 (a) to FIG. 6 (f). death,
As in FIG. 6, the oxide film 8 may be provided, but for simplicity, the figure shows a case where the oxide film 8 is not provided. A metal layer 10 is provided on this (FIG. 8 (h)), and after patterning (FIG. 8 (ll)), the base body 3 is bonded (FIG. 8 (j)), and the peeling film 4 is disassembled. The heat-resistant substrate 1 is separated (FIG. 8(k)), and the semiconductor thin film 2 is separated from the metal layer 10.
Divide and pattern according to the pattern (Fig. 8 (1)). At this time, for example, as shown in the figure,
Part of the metal layer 10 is exposed in the gap created by dividing the semiconductor thin film 2. After that, p is applied to the semiconductor thin film 2.
A -n junction layer (not shown) is formed, and a grating electrode 12 is formed so that a portion thereof contacts the metal layer 10 exposed in the gap of the semiconductor thin film 2 (FIG. 8(b)). As a result, the semiconductor device becomes, for example, as shown in FIGS. 6 and 7.
In the case of a semiconductor element for generating power by irradiation with light, a semiconductor device having a structure in which a plurality of semiconductor thin films 2 are connected to each other in series can be obtained, having power generation regions formed by a plurality of semiconductor thin films 2 on one base body 3.

In the above embodiment, the grid electrode 12 is used to electrically connect the divided semiconductor thin film 2. However, for example, a transparent conductive film or the like may be used. A power generation element made of a second Φ semiconductor thin film may be further laminated in the power generation region. For example, in the ninth embodiment shown in FIG. Divided by 0 as shown below, p-n
A semiconductor m1)2 made of, for example, polycrystalline silicon, on which a bonding layer (not shown) has been formed, is covered with a power generation element made of a second semiconductor thin film 14 of, for example, amorphous silicon (see FIG. 9(a)).
)). After a part of this second semiconductor Wi film 14 is melted and removed by, for example, a laser beam (FIG. 9(b)), it is covered with a transparent conductive film 15, and then the laser beam is removed. The second semiconductor thin film 14 and a part of the transparent conductive film 15 are simultaneously cut and removed using a beam or the like (FIG. 9(d)).
).

Further, as shown in the tenth embodiment of FIG. 10, a second semiconductor thin film 14 and a transparent conductive film 15 are formed on the entire surface (first
After that, the transparent conductive film 15 is removed by cutting at two places using, for example, a laser beam (Fig. 10 (b))), and then one of the cut parts is filled with, for example, a conductive paste. Electrical connection of the metal film 10 is made (FIG. 10(C)
)). As a result, the semiconductor thin film 2 and the second semiconductor thin film 1
A semiconductor device is obtained in which power generating elements having a laminated structure of 4 are provided in a plurality of areas on the same base body 3 and are connected in series.

1) and 12 show embodiments 1) and 12 of the present invention, in which the method for manufacturing a semiconductor device according to the present invention is applied to another semiconductor device, in order according to the manufacturing process. It is a schematic sectional view for explanation. The embodiment shown here is a semiconductor integrated circuit using a semiconductor thin film, in particular,
The present invention relates to a semiconductor device having a structure in which semiconductor thin films forming an integrated circuit are laminated in multiple layers. 1st) Figure (al~1st
) FIG.
As shown in the figure, a base material 3 is applied to a semiconductor thin film 2 formed on a heat-resistant substrate 1 via a peeling layer 4, and an electrically insulating bonding agent 17, such as polyimide resin or low-melting glass, is applied. (1st) figure (cup) used to join. After decomposing the release layer 4 and separating the heat-resistant substrate 1 (Fig. 1 (h)),
Semiconductor thin! 2 to form an integrated circuit region 18 (4 (FIG. 1) (1)), the matrix 3 and bonding agent 17 may be of any material as long as they can withstand the process of forming the integrated circuit region 18. For example, if a semiconductor substrate on which integrated circuits are already formed is used as the base body 3, a semiconductor device having a structure in which integrated circuits are stacked with an insulator sandwiched therebetween can be obtained. Further, by repeatedly laminating semiconductor thin films 2 using the semiconductor device according to this embodiment as a base body 3, a semiconductor device having a structure in which semiconductor thin films provided with integrated circuits are laminated in multiple layers can be obtained.

Furthermore, as shown in FIG. 12, an integrated circuit region 18 is formed on the surface of the heat-resistant substrate 1 before the semiconductor thin film 2 is separated therefrom. 12(h)), the heat-resistant substrate 1 may be separated (FIG. 12(1)); in this case,
Since the base body 3 and the bonding agent 17 do not need to withstand the processing for forming an integrated circuit, the base body 3 may be of any material as long as it can mechanically support the semiconductor thin film 2, and there is a great degree of freedom in selecting the material. .

As described above, according to the method of manufacturing a semiconductor device according to the present invention, since the melting and recrystallization of the semiconductor thin film 2 is performed on the heat-resistant substrate 1, the temperature increase during recrystallization may cause the already formed integrated circuit A multilayer semiconductor integrated circuit can be constructed without affecting the operation of the semiconductor integrated circuit. Furthermore, this allows heating with an infrared heater or a carbon heater to be used as a means of melting and recrystallization, so a large area of the semiconductor thin film 2 can be processed at once, which has the advantage of improving productivity. .

In addition, when configuring a semiconductor device having a structure in which semiconductor thin films 2 forming an integrated circuit are stacked, the thickness of the semiconductor thin film 2 should be as thin as possible within a range that does not interfere with the operation of the integrated circuit. For example, in the case of Fig. 1), before forming the integrated circuit in Fig. 1), and in the case of Fig. 12, before forming the integrated circuit in Fig. 12 (phantom), The thin film 2 may be etched or polished to reduce its thickness.

In each of the above embodiments, a polycrystalline silicon thin film is mainly used as the semiconductor thin film 2, and a silicon oxide film is mainly used as the peeling layer 4, but the materials of each part are limited to these. isn't it.

〔Effect of the invention〕

As described above, in the semiconductor device and the manufacturing method thereof according to the present invention, a semiconductor thin film is formed on a heat-resistant substrate, a matrix is formed on the semiconductor thin film, and then the heat-resistant substrate is peeled from the semiconductor thin film. This configuration prevents impurities from entering the semiconductor thin film, making it possible to increase the area and improve productivity.In addition, it is possible to form multiple semiconductor thin film regions on a single base, so that they do not overlap with each other. It is possible to realize an electrically connected integrated structure, there is a large degree of freedom in selecting the material of the base material, and there is an effect that it is possible to realize a semiconductor device that integrates many functions.

[Brief explanation of drawings]

FIG. 1 is a schematic sectional view for sequentially explaining a method for manufacturing a semiconductor device according to a first embodiment of the present invention according to its manufacturing steps, and FIGS. 6 is a schematic cross-sectional view for sequentially explaining the method for manufacturing a semiconductor device according to the fifth embodiment according to the manufacturing process; FIG.
7 to 12 are schematic cross-sectional views for sequentially explaining a sixth embodiment of the semiconductor device manufacturing method according to the present invention applied to an actual semiconductor device according to the manufacturing process, and FIGS. 13 shows seventh to twelfth embodiments in which the method of manufacturing a semiconductor device according to the present invention is applied to other actual semiconductor devices, and schematic cross-sectional views for sequentially explaining the manufacturing process thereof; FIG. 14 to 16 are schematic sectional views showing the structure of a conventional semiconductor device. In the figure, 1 is a heat-resistant substrate, 2 is a semiconductor thin film, 3 is a matrix, and 4 is a release layer. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (5)

[Claims] (1) forming the semiconductor thin film on a heat-resistant substrate that has the mechanical strength necessary to hold the semiconductor thin film at the temperature required to form the semiconductor thin film; and placing a matrix on the semiconductor thin film. A method for manufacturing a semiconductor device, comprising a step of bonding and a step of peeling the heat-resistant substrate from the semiconductor thin film. (2) Before forming the semiconductor thin film on the heat-resistant substrate, at least a part of the surface of the heat-resistant substrate is coated with a release layer, and in the step of peeling the heat-resistant substrate from the semiconductor thin film, 2. The method of manufacturing a semiconductor device according to claim 1, wherein the heat-resistant substrate and the semiconductor thin film are separated by decomposing a release layer. (3) Manufacturing the semiconductor device according to claim 1 or 2, wherein the step of forming the semiconductor thin film includes a step of zone melting recrystallization of the provided semiconductor thin film. Method. (4) A machine necessary to hold the semiconductor thin film on the semiconductor thin film formed on the heat-resistant substrate, which has the mechanical strength necessary to hold the semiconductor thin film at the temperature required to form the semiconductor thin film. 1. A semiconductor device comprising the semiconductor thin film and the base body by bonding a base body having physical strength and peeling the heat-resistant substrate from the semiconductor thin film. (5) A semiconductor device having a semiconductor thin film on a base body according to claim 4 is used as a second base body, and a second semiconductor thin film is formed on the second base body with an insulator interposed therebetween. Characteristic semiconductor devices.