JPH04331800A - Method of smoothing diamond surface, device therefor and diamond product taking advantage of the same method - Google Patents
Method of smoothing diamond surface, device therefor and diamond product taking advantage of the same methodInfo
- Publication number
- JPH04331800A JPH04331800A JP2056791A JP2056791A JPH04331800A JP H04331800 A JPH04331800 A JP H04331800A JP 2056791 A JP2056791 A JP 2056791A JP 2056791 A JP2056791 A JP 2056791A JP H04331800 A JPH04331800 A JP H04331800A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- ion beam
- smoothing
- avoiding
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 105
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 103
- 238000009499 grossing Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 21
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 39
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 238000005498 polishing Methods 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000012808 vapor phase Substances 0.000 claims description 3
- 238000001308 synthesis method Methods 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 11
- 230000003746 surface roughness Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】この発明は精密工具や光学部品な
どに用いられるダイヤモンドの表面平滑化方法及び装置
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for smoothing the surface of diamond used in precision tools, optical parts, etc.
【0002】0002
【従来の技術】ダイヤモンドは優れた硬さ、熱伝導性、
電気絶縁性を有するため、切削工具、メス、ヒートシン
ク、電子基板材料等に用いられる。また、光の透過性に
も優れているので、光学部品としても用いられている。
従来のダイヤモンド切削工具には、燒結体切削工具や単
石ダイヤモンド切削工具やCVD法によるダイヤモンド
コーテング切削工具等がある。[Prior art] Diamond has excellent hardness, thermal conductivity,
Because it has electrical insulation properties, it is used in cutting tools, scalpels, heat sinks, electronic board materials, etc. Furthermore, since it has excellent light transmittance, it is also used as an optical component. Conventional diamond cutting tools include sintered body cutting tools, single-stone diamond cutting tools, and diamond-coated cutting tools produced by the CVD method.
【0003】しかし、前記各種工具は、次のような問題
がある。燒結体切削工具は、ボンデング材が用いられて
いるので、ダイヤモンドそのものよりも耐摩耗性、熱伝
導率が低く耐久性において劣っている。又、単石ダイヤ
切削工具は、天然、人工を問わず大きな石が必要となる
ので高価なものとなってしまう。更に、CVDによるダ
イヤモンドコーテング切削工具は、基板となる超硬合金
との密着力が弱いため切削時に剥離することがある。However, the various tools described above have the following problems. Since the sintered cutting tool uses a bonding material, it has lower wear resistance and thermal conductivity than diamond itself, and is inferior in durability. Furthermore, single-stone diamond cutting tools require large stones, whether natural or artificial, and are therefore expensive. Furthermore, diamond-coated cutting tools made by CVD have a weak adhesion to the cemented carbide substrate, so they may peel off during cutting.
【0004】そこで、気相合成法で形成したダイヤモン
ド膜を所定形状に切断し、切削工具に固着する方法や基
板と表面のダイヤモンドとの中間にボンディング層、例
えば成分の傾斜機能を有する層を形成し、密着力を高め
る方法などが考えられる。しかし、気相合成法で形成し
たダイヤモンド、例えばアーク放電プラズマジェットC
VD法により形成されたダイヤモンド、の表面粗さは例
えば凸部最大高さが50μmRmax、マイクロ波プラ
ズマCVD法では例えば、3μmRmaxである。その
ため、その表面を平滑化する加工、即ち研磨が必要とな
る。この研磨方法として、ダイヤモンド粒子を用いる所
謂「とも擦り法」が利用される。[0004] Therefore, a method of cutting a diamond film formed by vapor phase synthesis into a predetermined shape and fixing it to a cutting tool, and forming a bonding layer, for example, a layer having a component gradient function, between the substrate and the diamond on the surface have been proposed. However, methods of increasing adhesion can be considered. However, diamonds formed by vapor phase synthesis, such as arc discharge plasma jet C
The surface roughness of diamond formed by the VD method is, for example, 50 μmRmax in the maximum height of the convex portion, and for example, 3 μmRmax in the microwave plasma CVD method. Therefore, processing to smoothen the surface, that is, polishing is required. As this polishing method, the so-called "tomo-suri method" using diamond particles is used.
【0005】[0005]
【発明が解決しようとする課題】従来例のダイヤモンド
の研磨法では、研磨速度が0.1μm/min.〜0.
1μm/Hと遅いので小さなダイヤモンドの研磨に長時
間を要している。そのため、研磨費用がかさみ、このダ
イヤモンドを用いたダヤモンド製品が高価なものとなっ
てしまう。Problems to be Solved by the Invention In the conventional diamond polishing method, the polishing rate is 0.1 μm/min. ~0.
Since it is slow at 1 μm/H, it takes a long time to polish small diamonds. Therefore, polishing costs increase and diamond products using this diamond become expensive.
【0006】この課題を解決する一つの手段として本発
明者は既にレーザービームを用いたダイヤモンドの研磨
方法を発明している。(平成2年特願第58702号参
照)この方法によるとYAGレーザーを用いて、表面の
凸部最大高さRmaxが50μmの合成ダイヤモンドを
短時間で3μmRmaxにすることができ、切削バイト
への応用が可能である。しかし更に精密な切削を行うに
は切削バイトの表面粗さを0.6μmRmax程度にす
ることが望ましく、ダイヤモンドの表面を平滑化する追
加の工程が必要である。As one means for solving this problem, the present inventor has already invented a diamond polishing method using a laser beam. (Refer to Japanese Patent Application No. 58702 of 1990) According to this method, using a YAG laser, synthetic diamond with a maximum surface convex height Rmax of 50 μm can be made to Rmax of 3 μm in a short time, and can be applied to cutting tools. is possible. However, in order to perform more precise cutting, it is desirable to set the surface roughness of the cutting tool to about 0.6 μmRmax, and an additional step of smoothing the diamond surface is required.
【0007】この発明は前記事情に鑑み、効率良く、か
つより平滑にダイヤモンドを研磨できるようにすること
を目的とする。又他の目的は平滑度が高く、かつ安価な
ダイヤモンド製品を得ることである。[0007] In view of the above-mentioned circumstances, an object of the present invention is to enable efficient and smooth polishing of diamond. Another object is to obtain a diamond product with high smoothness and low cost.
【0008】[0008]
【課題を解決するための手段】この発明は、ダイヤモン
ドの表面の凹部を避けて凸部の側面に向ってイオンビー
ムを照射しながら、該ダイヤモンドとイオンビームとを
相対的に変位せしめることを特徴とするダイヤモンドの
表面の平滑化方法により、又は、ダイヤモンドの表面に
レーザービームの側面を当接せしめ、該側面を設計平滑
化面に沿って相対的に移動させて第1次研磨を行った後
ダイヤモンドの表面の凹部を避けて凸部の側面に向って
イオンビームを照射しながら、該ダイヤモンドとイオン
ビームとを相対的に変位せしめることを特徴とするダイ
ヤモンドの表面の平滑化方法により前記目的を達成しよ
うとするものである。[Means for Solving the Problems] The present invention is characterized in that the diamond and the ion beam are relatively displaced while the ion beam is irradiated toward the side surfaces of the convex portions of the diamond while avoiding the concave portions on the surface of the diamond. After primary polishing is performed by a diamond surface smoothing method, or by bringing the side surface of the laser beam into contact with the diamond surface and moving the side surface relatively along the designed smoothed surface. The above object is achieved by a method for smoothing the surface of a diamond, which comprises displacing the diamond and the ion beam relative to each other while irradiating the ion beam toward the side surfaces of the protrusions while avoiding the concave portions of the surface of the diamond. This is what we are trying to achieve.
【0009】[0009]
【作用】ダイヤモンドの支持台にCVD法により合成し
たダイヤモンド膜を載置した後、イオンビームの発生手
段を作動させてイオンビームを発生させる。そして、入
射角調整手段により、該イオンビームが前記ダイヤモン
ド膜の表面の凸部の側部に向って照射するように調整す
ると、ダイヤモンド膜の表面に到達するイオンが有する
運動量や運動エネルギーにより該表面の凸部がスパッタ
リングされ、除去され平滑化される。更にこのイオンビ
ームをダイヤモンド表面に照射する方向を相対的にずら
しながら照射することにより、該表面の種々な形状をし
た凸部が平均して平滑化されることになり効果的に平滑
化が進む。[Operation] After placing a diamond film synthesized by the CVD method on a diamond support, the ion beam generating means is activated to generate an ion beam. When the ion beam is adjusted to irradiate the sides of the convex portions on the surface of the diamond film using the incident angle adjusting means, the momentum and kinetic energy of the ions reaching the surface of the diamond film cause the surface of the diamond film to irradiate. The protrusions are sputtered, removed and smoothed. Furthermore, by irradiating the diamond surface with this ion beam while relatively shifting the direction of irradiation, the various shaped convex portions on the surface are smoothed out on average, and smoothing progresses effectively. .
【0010】0010
【実施例】本発明の実施例を添付図面により説明するが
、同一図面符号はその名称も機能も同じである。ダイヤ
モンドの平滑化装置Aの上部にイオンビーム発生装置、
例えばECR(Electron Cyclotron
Resonance)形イオン銃1を設け、その下部
にダイヤモンド2の支持台3を配設する。このECR形
イオン銃1は、周知のように磁場中の電子のサイクロン
共鳴を利用するもので無電極放電である。ダイヤモンド
2の支持台3は、傾斜してモータ5に固定されている。
モータ5には、入射角調整手段6が設けられている。こ
の調整手段6を調整することにより、支持台3の傾斜角
度が変化するとともに、モータ5の中心軸Cとイオンビ
ーム4との交差角度、即ち、入射角θが変化する。この
入射角θは例えば、60°〜85°の範囲内で選択され
る。8は、真空計、9は真空ポンプである。DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described with reference to the accompanying drawings, in which the same reference numerals have the same names and functions. An ion beam generator is installed on top of the diamond smoothing device A.
For example, ECR (Electron Cyclotron
A resonance (resonance) type ion gun 1 is provided, and a support 3 for a diamond 2 is provided below it. As is well known, the ECR type ion gun 1 utilizes cyclone resonance of electrons in a magnetic field and is an electrodeless discharge. A support stand 3 for the diamond 2 is fixed to a motor 5 in an inclined manner. The motor 5 is provided with an incident angle adjusting means 6. By adjusting this adjusting means 6, the inclination angle of the support base 3 changes, and the intersection angle between the central axis C of the motor 5 and the ion beam 4, that is, the incident angle θ changes. This angle of incidence θ is selected within the range of 60° to 85°, for example. 8 is a vacuum gauge, and 9 is a vacuum pump.
【0011】次に実施例の作動につき説明する。CVD
法により形成したダイヤモンド2をダイヤモンドの支持
台2に固定する。このダイヤモンド2は図2に示す様に
、その表面20即ち、被研磨面が凸凹している。入射角
調整手段6により入射角θを調整し、ダイヤモンド2の
表面20の凹部20bを避けて凸部20aの側面に向っ
てイオンビーム4が照射されるようにする。そして、イ
オンビーム4を照射しながら、モータ5を回転させると
、支持台3が回ってダイヤモンド2が回転するとともに
該イオンビーム4によりスパッタリング現象が生じ、ダ
イヤモンドの表面20の凸部20aが除去され、平滑化
される。Next, the operation of the embodiment will be explained. CVD
A diamond 2 formed by the method is fixed to a diamond support 2. As shown in FIG. 2, this diamond 2 has an uneven surface 20, that is, a surface to be polished. The incident angle θ is adjusted by the incident angle adjusting means 6 so that the ion beam 4 is irradiated toward the side surface of the convex portion 20a while avoiding the concave portion 20b of the surface 20 of the diamond 2. Then, when the motor 5 is rotated while irradiating the ion beam 4, the support base 3 rotates and the diamond 2 rotates, and the ion beam 4 causes a sputtering phenomenon, and the convex portion 20a on the surface 20 of the diamond is removed. , smoothed.
【0012】次に実験例について説明する。
実験例1
アーク放電プラズマジェットCVD法により合成したダ
イヤモンド膜2を用いた。この表面は50μmRmax
の粗さを有している。この表面に図3に示す様にYAG
レーザ30のレーザービームの側面31を当接させて研
磨したところ3μmRmaxの粗さになり、これをダイ
ヤモンド試料とした。このダイヤモンド試料を銀系ペー
ストを用いて支持台3に固着し、次の条件でイオンビー
ム4をダイヤモンド表面20に照射した。Next, an experimental example will be explained. Experimental Example 1 A diamond film 2 synthesized by arc discharge plasma jet CVD method was used. This surface is 50μmRmax
It has a roughness of YAG on this surface as shown in Figure 3.
When the side surface 31 of the laser beam of the laser 30 was brought into contact and polished, a roughness of 3 μmRmax was obtained, and this was used as a diamond sample. This diamond sample was fixed to a support base 3 using a silver-based paste, and the diamond surface 20 was irradiated with an ion beam 4 under the following conditions.
【表1】
この条件では結晶粒の角がわずかにとれる程度で表面の
粗さには殆んど変化がなかった。[Table 1] Under these conditions, the edges of the crystal grains were slightly rounded, and there was almost no change in surface roughness.
【0013】実験例2
アーク放電プラズマジェットCVD法により合成したダ
イヤモンド膜2をダイヤモンド試料とした。従ってその
表面の粗さは前述の通り50μmRmaxである。この
ダイヤモンド試料の銀系ペーストを用いて板状のセラミ
ックヒータに固着し、これを支持台に固定した。Experimental Example 2 A diamond film 2 synthesized by arc discharge plasma jet CVD method was used as a diamond sample. Therefore, the surface roughness is 50 μmRmax as described above. This diamond sample was fixed to a plate-shaped ceramic heater using a silver-based paste, and this was fixed to a support stand.
【表2】
尚、酸素雰囲気とするために毎分1cm3 (標準状態
)の酸素が導入されている。酸素雰囲気とする理由はダ
イヤモンド表面の平滑化が速まるからである。また、セ
ラミックヒータを用いてダイヤモンド試料の表面を40
0 °Cに加熱しているが、この理由も又平滑化が速ま
るからである。酸素雰囲気としたり、ダイヤモンド表面
を加熱することにより平滑化が促進される理由として化
学反応の平滑化への寄与があるものと考えられるが詳細
は確かめられてはいない。イオン照射を24時間行った
ところダイヤモンド試料の表面粗さは15μmRmax
へと平滑化された。[Table 2] In order to create an oxygen atmosphere, oxygen was introduced at a rate of 1 cm3 per minute (standard state). The reason for the oxygen atmosphere is that the smoothing of the diamond surface is accelerated. In addition, the surface of the diamond sample was heated at 40°C using a ceramic heater.
The reason for heating to 0°C is also to speed up smoothing. The reason why smoothing is promoted by creating an oxygen atmosphere or heating the diamond surface is thought to be due to the contribution of chemical reactions to smoothing, but the details have not been confirmed. After 24 hours of ion irradiation, the surface roughness of the diamond sample was 15μmRmax.
smoothed to.
【0014】実験例3、4
マイクロ波プラズマCVD法により厚さ1mmのシリコ
ン基板(母材)上に合成した約20μm厚のダイヤモン
ド膜2をダイヤモンド試料とした。その表面粗さは3μ
mRmaxである。その表面にダイヤモンド試料が合成
されているシリコン基板を銀系ペーストを用いて支持台
に固着した。尚、以下に述べる実施例5に於いても、同
一のダイヤモンド試料、固着方法を用いている。Experimental Examples 3 and 4 A diamond sample was a diamond film 2 with a thickness of about 20 μm synthesized on a silicon substrate (base material) with a thickness of 1 mm by the microwave plasma CVD method. Its surface roughness is 3μ
mRmax. A silicon substrate with a diamond sample synthesized on its surface was fixed to a support using silver-based paste. Note that the same diamond sample and fixing method are used in Example 5, which will be described below.
【表3】
実験例3と4の相違は入射角が実験例3では60°、実
験例4では80°であることである。この条件で3時間
イオン照射するとダイヤモンド表面が平滑化され、特に
入射角80°の方が60°の場合よりも平滑化が進んで
いることが見出された。実験例4の照射後のダイヤモン
ド表面にはイオンビームの照射方向に沿ったしわのよう
な筋が形成されていたが、照射面の凹凸は主にこの筋に
よるものである。[Table 3] The difference between Experimental Examples 3 and 4 is that the incident angle is 60° in Experimental Example 3 and 80° in Experimental Example 4. It was found that the diamond surface was smoothed by ion irradiation under these conditions for 3 hours, and in particular, the smoothing progressed more when the incident angle was 80° than when it was 60°. On the diamond surface after irradiation in Experimental Example 4, wrinkle-like lines were formed along the irradiation direction of the ion beam, and the unevenness of the irradiated surface was mainly due to these lines.
【0015】実験例5
ダイヤモンドの表面のしわのような筋を消す目的で次の
条件によりイオン照射を行なった。Experimental Example 5 Ion irradiation was carried out under the following conditions for the purpose of erasing wrinkle-like lines on the surface of diamond.
【表4】
この条件にて8時間イオン照射をダイヤモンド試料の表
面に行ったところ表面粗さが照射前の3μmRmaxか
ら0.2〜0.5μmRmaxとなり、平滑な面が得ら
れた。この表面粗さは前述の精密用の切削バイトに要求
される0.6μmRmaxと云う値をクリアしている。
図4は照射前のダイヤモンド表面の写真、図5は照射後
の写真であるが、後者は平滑化が進んでおり、前記実験
例で生じたしわのような筋が消えている。これはダイヤ
モンド試料をイオンビームの照射方向を変化させる目的
で回転させることにより、しわのような筋が発生しなく
なったからである。[Table 4] When ion irradiation was performed on the surface of the diamond sample for 8 hours under these conditions, the surface roughness increased from 3 μmRmax before irradiation to 0.2 to 0.5 μmRmax, and a smooth surface was obtained. This surface roughness exceeds the value of 0.6 μmRmax required for the precision cutting tool described above. FIG. 4 is a photograph of the diamond surface before irradiation, and FIG. 5 is a photograph after irradiation. The latter has been smoothed, and the wrinkle-like streaks that occurred in the experimental example have disappeared. This is because by rotating the diamond sample for the purpose of changing the irradiation direction of the ion beam, wrinkle-like streaks no longer occur.
【0016】尚、実験例では、ダイヤモンド平滑化を行
う面、つまり設計平滑化面が全てイオンビームにより覆
はれているが、設計平滑化面が広くイオンビーム照射が
外れる場合には次のようにするとよい。即ち、図6に示
すようにモータ5を照射角調整手段6を介して支持アー
ム41に固定し、該アーム41を支柱40に矢印A40
方向に移動可能に設けるとともに、該支柱40を矢印4
2方向に摺動可能に設置する。そしてダイヤモンドの支
持台3を往復動と回転運動をさせることによりイオンビ
ーム4の照射方向を全て設計平滑化面に対して変化させ
ることが実現できる。又、照射角調整手段6はモータ5
に設ける代わりに、イオン銃を回動可能に配設し、イオ
ンビームの照射角を調整してもよい。イオンビームの発
生装置としてはECRイオン銃に限らず他の装置、例え
ば、カウフマン形イオン銃を用いてもよい。In the experimental example, the surface on which diamond smoothing is to be performed, that is, the designed smoothing surface, is entirely covered by the ion beam, but if the designed smoothing surface is wide and the ion beam irradiation misses, the following will occur. It is better to make it . That is, as shown in FIG. 6, the motor 5 is fixed to the support arm 41 via the irradiation angle adjustment means 6, and the arm 41 is attached to the support 40 in the direction indicated by the arrow A40.
The column 40 is provided so as to be movable in the direction indicated by the arrow 4.
Installed so that it can slide in two directions. By reciprocating and rotating the diamond support 3, it is possible to change the irradiation direction of the ion beam 4 with respect to the designed smoothed surface. Further, the irradiation angle adjusting means 6 is controlled by a motor 5.
Instead of providing the ion gun, the ion gun may be rotatably arranged and the irradiation angle of the ion beam may be adjusted. The ion beam generator is not limited to the ECR ion gun, but other devices such as a Kauffman ion gun may be used.
【0017】[0017]
【発明の効果】本発明は以上の様に構成したので、イオ
ンビームがダイヤモンドの凸部の側面に衝突してスパッ
タリング現象を起こす。そのため該凸部が除去されるの
で、ダイヤモンドの表面は、従来例に比べ、より平滑化
される。又レーザービームの表面を研磨した後イオンビ
ームにより研磨すると、従来例に比べ、加工時間が短縮
されるとともに、より平滑化された研磨面を得ることが
できる。As the present invention is constructed as described above, the ion beam collides with the side surface of the convex portion of the diamond, causing a sputtering phenomenon. Therefore, since the protrusions are removed, the surface of the diamond is smoother than in the conventional example. Further, when the surface is polished by a laser beam and then polished by an ion beam, the processing time is shortened and a smoother polished surface can be obtained compared to the conventional example.
【図1】本発明の実施例のダイヤモンド表面の平滑化装
置を示す一部断面正面図である。FIG. 1 is a partially sectional front view showing a diamond surface smoothing device according to an embodiment of the present invention.
【図2】図1の要部拡大断面図である。FIG. 2 is an enlarged cross-sectional view of the main part of FIG. 1;
【図3】レーザービーム加工を示す正面図である。FIG. 3 is a front view showing laser beam processing.
【図4】研磨前のダイヤモンド表面を示す図面代用写真
である。FIG. 4 is a photograph substituted for a drawing showing the diamond surface before polishing.
【図5】研磨後のダイヤモンド表面を示す図面代用写真
である。FIG. 5 is a photograph substituted for a drawing showing the diamond surface after polishing.
【図6】他の実施例を示す要部正面図である。FIG. 6 is a front view of main parts showing another embodiment.
1 イオンビームの発生手段 2 ダイヤモンド 3 ダイヤモンドの支持台 4 イオンビーム 5 モータ 6 入射角調整手段 θ 入射角 1 Ion beam generation means 2 Diamond 3 Diamond support stand 4 Ion beam 5 Motor 6 Incident angle adjustment means θ Incident angle
Claims (10)
部の側面に向ってイオンビームを照射しながら、該ダイ
ヤモンドとイオンビームとを相対的に変位せしめること
を特徴とするダイヤモンドの表面の平滑化方法。1. Smoothing of the surface of a diamond, characterized by displacing the diamond and the ion beam relative to each other while irradiating the ion beam toward the side surfaces of the convex portions while avoiding the concave portions of the surface of the diamond. Method.
の側面を当接せしめ、該側面を設計平滑化面に沿って相
対的に移動させて第1次研磨を行った後ダイヤモンドの
表面の凹部を避けて凸部の側面に向ってイオンビームを
照射しながら、該ダイヤモンドとイオンビームとを相対
的に変位せしめることを特徴とするダイヤモンドの表面
の平滑化方法。[Claim 2] After primary polishing is performed by bringing the side surface of the laser beam into contact with the diamond surface and moving the side surface relatively along the designed smoothed surface, the diamond surface is polished while avoiding the concavities. A method for smoothing the surface of a diamond, which comprises displacing the diamond and the ion beam relative to each other while irradiating the ion beam toward the side surfaces of the convex portions.
ン銃であることを特徴とする請求項1記載のダイヤモン
ドの表面の平滑化方法。3. The method for smoothing a diamond surface according to claim 1, wherein the ion beam generating means is an ECR ion gun.
われることを特徴とする請求項1記載のダイヤモンドの
表面の平滑化方法。4. The method for smoothing a diamond surface according to claim 1, wherein the ion beam irradiation is performed in an oxygen atmosphere.
特徴とする請求項1記載のダイヤモンドの表面の平滑化
方法。5. The method for smoothing a diamond surface according to claim 1, wherein the diamond is heated.
であることを特徴とする請求項1記載のダイヤモンドの
表面の平滑化方法。[Claim 6] The irradiation angle of the ion beam is 60 to 85°.
The method for smoothing the surface of a diamond according to claim 1, characterized in that:
有するダイヤモンドの支持台;該支持台上のダイヤモン
ドの表面の凹部を避けて凸部の側面に前記イオンビーム
を向わせる入射角調整手段;から成ることを特徴とする
ダイヤモンド表面の平滑化装置。7. An ion beam generating means; a diamond support having a driving means; an incident angle adjusting means for directing the ion beam to a side surface of a convex portion while avoiding a concave portion on the surface of the diamond on the support; A diamond surface smoothing device comprising:
徴とする請求項7記載のダイヤモンド表面の平滑化装置
。8. The diamond surface smoothing device according to claim 7, wherein the driving means is a rotating means.
を特徴とする請求項7記載のダイヤモンド表面の平滑化
装置。9. The diamond surface smoothing device according to claim 7, wherein the driving means is a reciprocating means.
ド膜の表面の凹部を避けて凸部の側面に向ってイオンビ
ームを照射して該ダイヤモンド膜の表面を平滑化したこ
とを特徴とするダイヤモンド製品。10. A diamond product, characterized in that the surface of the diamond film formed by a vapor phase synthesis method is smoothed by irradiating an ion beam toward the side surfaces of the convex parts while avoiding the recesses on the surface of the diamond film. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2056791A JPH04331800A (en) | 1991-01-21 | 1991-01-21 | Method of smoothing diamond surface, device therefor and diamond product taking advantage of the same method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2056791A JPH04331800A (en) | 1991-01-21 | 1991-01-21 | Method of smoothing diamond surface, device therefor and diamond product taking advantage of the same method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04331800A true JPH04331800A (en) | 1992-11-19 |
Family
ID=12030759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2056791A Pending JPH04331800A (en) | 1991-01-21 | 1991-01-21 | Method of smoothing diamond surface, device therefor and diamond product taking advantage of the same method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04331800A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998001258A1 (en) * | 1996-07-09 | 1998-01-15 | Komatsu Ltd. | Method for grinding diamond, process for preparing grinding stone, and grinding device |
| US6705806B2 (en) | 1998-12-28 | 2004-03-16 | Ngk Spark Plug Co., Ltd. | Cutting tool coated with diamond |
| WO2007116522A1 (en) * | 2006-04-10 | 2007-10-18 | Osg Corporation | Method of removing diamond coating |
| JP2010036297A (en) * | 2008-08-05 | 2010-02-18 | Nachi Fujikoshi Corp | Method for polishing diamond coated film, diamond coated cutting tool and method for manufacturing diamond coated cutting tool |
| US8108986B2 (en) | 2007-12-28 | 2012-02-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a perpendicular magnetic write pole having a large bevel angle |
| JP2016537785A (en) * | 2013-11-20 | 2016-12-01 | ティーイーエル エピオン インコーポレイテッド | Multi-step location specific process for substrate edge profile correction for GCIB systems |
| WO2019035437A1 (en) * | 2017-08-15 | 2019-02-21 | 住友電気工業株式会社 | Body obtained by processing solid carbon-containing material and producing method thereof |
| US11518680B2 (en) | 2017-08-15 | 2022-12-06 | Sumitomo Electric Industries, Ltd. | Body obtained by processing solid carbon-containing material, producing method thereof, and producing apparatus thereof |
-
1991
- 1991-01-21 JP JP2056791A patent/JPH04331800A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998001258A1 (en) * | 1996-07-09 | 1998-01-15 | Komatsu Ltd. | Method for grinding diamond, process for preparing grinding stone, and grinding device |
| US6705806B2 (en) | 1998-12-28 | 2004-03-16 | Ngk Spark Plug Co., Ltd. | Cutting tool coated with diamond |
| US7179022B2 (en) | 1998-12-28 | 2007-02-20 | Ngk Spark Plug Co., Ltd. | Cutting tool coated with diamond |
| WO2007116522A1 (en) * | 2006-04-10 | 2007-10-18 | Osg Corporation | Method of removing diamond coating |
| US8108986B2 (en) | 2007-12-28 | 2012-02-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a perpendicular magnetic write pole having a large bevel angle |
| JP2010036297A (en) * | 2008-08-05 | 2010-02-18 | Nachi Fujikoshi Corp | Method for polishing diamond coated film, diamond coated cutting tool and method for manufacturing diamond coated cutting tool |
| JP2016537785A (en) * | 2013-11-20 | 2016-12-01 | ティーイーエル エピオン インコーポレイテッド | Multi-step location specific process for substrate edge profile correction for GCIB systems |
| WO2019035437A1 (en) * | 2017-08-15 | 2019-02-21 | 住友電気工業株式会社 | Body obtained by processing solid carbon-containing material and producing method thereof |
| CN111032931A (en) * | 2017-08-15 | 2020-04-17 | 住友电气工业株式会社 | Processed body of solid carbon-containing material and method for producing same |
| JPWO2019035437A1 (en) * | 2017-08-15 | 2020-09-03 | 住友電気工業株式会社 | Solid carbon-containing material processed product and its manufacturing method |
| US11518680B2 (en) | 2017-08-15 | 2022-12-06 | Sumitomo Electric Industries, Ltd. | Body obtained by processing solid carbon-containing material, producing method thereof, and producing apparatus thereof |
| US11629104B2 (en) | 2017-08-15 | 2023-04-18 | Sumitomo Electric Industries, Ltd. | Body obtained by processing solid carbon-containing material and producing method thereof |
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